Статті в журналах з теми "Thin Film Transistors (TFT)"
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Park, Hyun-Woo, Sera Kwon, Aeran Song, Dukhyun Choi, and Kwun-Bum Chung. "Dynamics of bias instability in the tungsten-indium-zinc oxide thin film transistor." Journal of Materials Chemistry C 7, no. 4 (2019): 1006–13. http://dx.doi.org/10.1039/c8tc03585g.
Повний текст джерелаPokharel, Peshal, and Lalita Shrestha. "Fabrication of Transparent Thin Film for Application of Thin Film Transistor (TFT) and Microelectronics." Himalayan Journal of Science and Technology 6, no. 1 (December 31, 2022): 22–28. http://dx.doi.org/10.3126/hijost.v6i1.50645.
Повний текст джерелаManoli, Kyriaki, Preethi Seshadri, Mandeep Singh, Cinzia Di Franco, Angelo Nacci, Gerardo Palazzo, and Luisa Torsi. "Solvent-gated thin-film-transistors." Physical Chemistry Chemical Physics 19, no. 31 (2017): 20573–81. http://dx.doi.org/10.1039/c7cp03262e.
Повний текст джерелаKuo, Yue. "(Invited) Oxide TFT Applications: Principles and Challenges." ECS Meeting Abstracts MA2022-02, no. 35 (October 9, 2022): 1285. http://dx.doi.org/10.1149/ma2022-02351285mtgabs.
Повний текст джерелаMądzik, Mateusz Tomasz, Elangovan Elamurugu, Raquel Flores, and Jaime Viegas. "Impact of glycerol on Zinc Oxide based thin film transistors with Indium Molybdenum Oxide electrodes." MRS Advances 1, no. 4 (2016): 265–68. http://dx.doi.org/10.1557/adv.2016.26.
Повний текст джерелаYan, Xingzhen, Kai Shi, Xuefeng Chu, Fan Yang, Yaodan Chi, and Xiaotian Yang. "Stepped Annealed Inkjet-Printed InGaZnO Thin-Film Transistors." Coatings 9, no. 10 (September 27, 2019): 619. http://dx.doi.org/10.3390/coatings9100619.
Повний текст джерелаGu, Guiru, Yunfeng Ling, Runyu Liu, Puminun Vasinajindakaw, Xuejun Lu, Carissa S. Jones, Wu-Sheng Shih, et al. "All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response." Journal of Nanotechnology 2011 (2011): 1–4. http://dx.doi.org/10.1155/2011/823680.
Повний текст джерелаNagamatsu, Shuichi, Masataka Ishida, Shougo Miyajima, and Shyam S. Pandey. "P3HT Nanofibrils Thin-Film Transistors by Adsorbing Deposition in Suspension." Materials 12, no. 21 (November 5, 2019): 3643. http://dx.doi.org/10.3390/ma12213643.
Повний текст джерелаFuruta, Mamoru, and Yusaku Magari. "(Invited, Digital Presentation) Nondegenerate Hydrogen-Doped Polycrystalline Indium Oxide (InOx:H) Thin Films for High-Mobility Thin Film Transistors." ECS Meeting Abstracts MA2022-02, no. 35 (October 9, 2022): 1266. http://dx.doi.org/10.1149/ma2022-02351266mtgabs.
Повний текст джерелаShin, Seung Won, Jae Eun Cho, Hyun-Mo Lee, Jin-Seong Park, and Seong Jun Kang. "Photoresponses of InSnGaO and InGaZnO thin-film transistors." RSC Advances 6, no. 87 (2016): 83529–33. http://dx.doi.org/10.1039/c6ra17896k.
Повний текст джерелаXu, Wangying, Chuyu Xu, Zhibo Zhang, Weicheng Huang, Qiubao Lin, Shuangmu Zhuo, Fang Xu, Xinke Liu, Deliang Zhu, and Chun Zhao. "Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors." Nanomaterials 12, no. 16 (August 22, 2022): 2880. http://dx.doi.org/10.3390/nano12162880.
Повний текст джерелаYang, X., C. Wang, C. Zhao, W. Tang, X. Gao, J. Yang, B. Liu, X. Qi, G. Du, and J. Cao. "Fabrication of ZnO Thin Film Transistors Based on the Substrate of Glass." Key Engineering Materials 428-429 (January 2010): 501–4. http://dx.doi.org/10.4028/www.scientific.net/kem.428-429.501.
Повний текст джерелаKang, Tsung-Kuei, Yu-Yu Lin, Han-Wen Liu, Che-Li Lin, Po-Jui Chang, Ming-Cheng Kao, and Hone-Zern Chen. "Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO3 Capacitor." Membranes 11, no. 10 (September 30, 2021): 758. http://dx.doi.org/10.3390/membranes11100758.
Повний текст джерелаPons Flores, Cesar Adrian, Israel Mejía, Manuel Quevedo-Lopez, Clemente Alvarado Beltran, and Luis Martín Reséndiz. "Influence of active layer thickness, device architecture and degradation effects on the contact resistance in organic thin film transistors." Superficies y Vacío 30, no. 3 (November 26, 2017): 46–50. http://dx.doi.org/10.47566/2017_syv30_1-030046.
Повний текст джерелаNing, Honglong, Xuan Zeng, Hongke Zhang, Xu Zhang, Rihui Yao, Xianzhe Liu, Dongxiang Luo, Zhuohui Xu, Qiannan Ye, and Junbiao Peng. "Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature." Membranes 12, no. 1 (December 27, 2021): 29. http://dx.doi.org/10.3390/membranes12010029.
Повний текст джерелаWang, Xiao, and Ananth Dodabalapur. "Modeling of thin-film transistor device characteristics based on fundamental charge transport physics." Journal of Applied Physics 132, no. 4 (July 28, 2022): 044501. http://dx.doi.org/10.1063/5.0083876.
Повний текст джерелаKandpal, Kavindra, and Navneet Gupta. "Perspective of zinc oxide based thin film transistors: a comprehensive review." Microelectronics International 35, no. 1 (January 2, 2018): 52–63. http://dx.doi.org/10.1108/mi-10-2016-0066.
Повний текст джерелаLiu, Xianzhe, Ao Chen, Weigang Zhu, Yan Li, Huiqi Zhang, Youbin Chen, Aiping Huang, and Jianyi Luo. "20.1: Invited Paper: Research on Oxide Thin Film Transistors for Wearable Sensors." SID Symposium Digest of Technical Papers 54, S1 (April 2023): 151–52. http://dx.doi.org/10.1002/sdtp.16249.
Повний текст джерелаHu, Shiben, Kuankuan Lu, Honglong Ning, Rihui Yao, Yanfen Gong, Zhangxu Pan, Chan Guo, et al. "Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance." Nanomaterials 11, no. 2 (February 18, 2021): 522. http://dx.doi.org/10.3390/nano11020522.
Повний текст джерелаTayoub, Hadjira, Baya Zebentouta, and Zineb Benamara. "TCAD Simulation of the Electrical Characteristics of Polycrystalline Silicon Thin Film Transistor." Pakistan Journal of Scientific & Industrial Research Series A: Physical Sciences 63, no. 2 (July 15, 2020): 89–93. http://dx.doi.org/10.52763/pjsir.phys.sci.63.2.2020.89.93.
Повний текст джерелаMatsukawa, Kimihiro, Mitsuru Watanabe, Takashi Hamada, Takashi Nagase, and Hiroyoshi Naito. "Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors." International Journal of Polymer Science 2012 (2012): 1–10. http://dx.doi.org/10.1155/2012/852063.
Повний текст джерелаShuib, Umar Faruk, Khairul Anuar Mohamad, Afishah Alias, Tamer A. Tabet, Bablu K. Gosh, and Ismail Saad. "Modelling and Simulation Approach for Organic Thin-Film Transistors Using MATLAB Simulation." Advanced Materials Research 1107 (June 2015): 514–19. http://dx.doi.org/10.4028/www.scientific.net/amr.1107.514.
Повний текст джерелаAl-Jawhari, H. A., J. A. Caraveo-Frescas, and M. N. Hedhili. "Tunable Performance of P-Type Cu2O/SnO Bilayer Thin Film Transistors." Advances in Science and Technology 93 (October 2014): 260–63. http://dx.doi.org/10.4028/www.scientific.net/ast.93.260.
Повний текст джерелаWager, John F. "(Invited) Thin-Film Transistor Accumulation-Mode Modeling." ECS Meeting Abstracts MA2022-02, no. 35 (October 9, 2022): 1257. http://dx.doi.org/10.1149/ma2022-02351257mtgabs.
Повний текст джерелаYen, Te Jui, Albert Chin, and Vladimir Gritsenko. "Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer." Nanomaterials 11, no. 1 (January 3, 2021): 92. http://dx.doi.org/10.3390/nano11010092.
Повний текст джерелаYang, Huan, Bo Wang, Wenting Dong, Zhikang Ma, Wengao Pan, Lei Lu, and Shengdong Zhang. "P‐1.8: Energy‐Band‐Dependent Mobility in Heterojunction Amorphous Oxide Semiconductor Thin‐Film Transistors." SID Symposium Digest of Technical Papers 54, S1 (April 2023): 461–63. http://dx.doi.org/10.1002/sdtp.16332.
Повний текст джерелаMd Sin, N. D., Mohamad Hafiz Mamat, and Mohamad Rusop. "Optical Properties of Nanostructured Aluminum Doped Zinc Oxide (ZnO) Thin Film for Thin Film Transistor (TFT) Application." Advanced Materials Research 667 (March 2013): 511–15. http://dx.doi.org/10.4028/www.scientific.net/amr.667.511.
Повний текст джерелаShur, Michael, Xueqing Liu, and Trond Ytterdal. "(Invited) Improved Thin Film Transistor Model Predicts TFT Operation in the THz Range." ECS Meeting Abstracts MA2022-02, no. 35 (October 9, 2022): 1256. http://dx.doi.org/10.1149/ma2022-02351256mtgabs.
Повний текст джерелаSu, Jinbao, Hui Yang, Weiguang Yang, and Xiqing Zhang. "Electrical characteristics of tungsten-doped InZnSnO thin film transistors by RF magnetron sputtering." Journal of Vacuum Science & Technology B 40, no. 3 (May 2022): 032201. http://dx.doi.org/10.1116/6.0001702.
Повний текст джерелаBorchert, James W., Ute Zschieschang, Florian Letzkus, Michele Giorgio, R. Thomas Weitz, Mario Caironi, Joachim N. Burghartz, Sabine Ludwigs, and Hagen Klauk. "Flexible low-voltage high-frequency organic thin-film transistors." Science Advances 6, no. 21 (May 2020): eaaz5156. http://dx.doi.org/10.1126/sciadv.aaz5156.
Повний текст джерелаSingh, Mandeep, Gerardo Palazzo, Giuseppe Romanazzi, Gian Paolo Suranna, Nicoletta Ditaranto, Cinzia Di Franco, Maria Vittoria Santacroce, et al. "Bio-sorbable, liquid electrolyte gated thin-film transistor based on a solution-processed zinc oxide layer." Faraday Discuss. 174 (2014): 383–98. http://dx.doi.org/10.1039/c4fd00081a.
Повний текст джерелаJung, Seyeon, Taehoon Sung, Sein Lee, and J. Y. Kwon. "Control of Hydrogen Concentration in Ingazno Thin Film Using Cryopumping System." ECS Meeting Abstracts MA2022-01, no. 31 (July 7, 2022): 1333. http://dx.doi.org/10.1149/ma2022-01311333mtgabs.
Повний текст джерелаKuo, Yue. "Welcome Remarks - H03: Thin Film Transistors 15 (TFT 15)." ECS Meeting Abstracts MA2020-02, no. 28 (November 23, 2020): Open. http://dx.doi.org/10.1149/ma2020-0228openmtgabs.
Повний текст джерелаWang, Chong, Liang Guo, Mingzhou Lei, Chao Wang, Xuefeng Chu, Fan Yang, Xiaohong Gao, Huan Wamg, Yaodan Chi, and Xiaotian Yang. "Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors." Nanomaterials 12, no. 14 (July 13, 2022): 2397. http://dx.doi.org/10.3390/nano12142397.
Повний текст джерелаDargar, Shashi Kant, J. K. Srivastava, Santosh Bharti, and Abha Nyati. "Performance Evaluation of GaN based Thin Film Transistor using TCAD Simulation." International Journal of Electrical and Computer Engineering (IJECE) 7, no. 1 (February 1, 2017): 144. http://dx.doi.org/10.11591/ijece.v7i1.pp144-151.
Повний текст джерелаChen, Wei-De, Sheng-Po Chang, and Wei-Lun Huang. "Characteristics of MgIn2O4 Thin Film Transistors Enhanced by Introducing an MgO Buffer Layer." Coatings 10, no. 12 (December 20, 2020): 1261. http://dx.doi.org/10.3390/coatings10121261.
Повний текст джерелаLee, Seung-Hwan, Hyun-Jun Jeong, Ki-Lim Han, GeonHo Baek, and Jin-Seong Park. "An organic–inorganic hybrid semiconductor for flexible thin film transistors using molecular layer deposition." Journal of Materials Chemistry C 9, no. 12 (2021): 4322–29. http://dx.doi.org/10.1039/d0tc05281g.
Повний текст джерелаLin, Jium-Ming, Po-Kuang Chang, and Zhong-Qing Hou. "INTEGRATING MICROARRAY PROBES AND AMPLIFIER ON AN ACTIVE RFID TAG FOR BIOSENSING AND MONITOR SYSTEM DESIGN." Biomedical Engineering: Applications, Basis and Communications 21, no. 06 (December 2009): 421–25. http://dx.doi.org/10.4015/s1016237209001556.
Повний текст джерелаShin, Hyunji, Hyeonju Lee, Bokyung Kim, Xue Zhang, Jin-Hyuk Bae, and Jaehoon Park. "Effects of Blended Poly(3-hexylthiophene) and 6,13-bis(triisopropylsilylethynyl) pentacene Organic Semiconductors on the Photoresponse Characteristics of Thin-Film Transistors." Korean Journal of Metals and Materials 60, no. 3 (March 5, 2022): 198–205. http://dx.doi.org/10.3365/kjmm.2022.60.3.198.
Повний текст джерелаLee, Won-Yong, Hyunjae Lee, Seunghyun Ha, Changmin Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, and Jaewon Jang. "Effect of Mg Doping on the Electrical Performance of a Sol-Gel-Processed SnO2 Thin-Film Transistor." Electronics 9, no. 3 (March 22, 2020): 523. http://dx.doi.org/10.3390/electronics9030523.
Повний текст джерелаLee, Hyeonju, Xue Zhang, Jung Kim, Eui-Jik Kim, and Jaehoon Park. "Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing." Materials 11, no. 11 (October 26, 2018): 2103. http://dx.doi.org/10.3390/ma11112103.
Повний текст джерелаZhang, Lirong, Huaming Yu, Wenping Xiao, Chun Liu, Junrong Chen, Manlan Guo, Huayu Gao, Baiquan Liu, and Weijing Wu. "Strategies for Applications of Oxide-Based Thin Film Transistors." Electronics 11, no. 6 (March 20, 2022): 960. http://dx.doi.org/10.3390/electronics11060960.
Повний текст джерелаLiu, Wei-Sheng, Chih-Hao Hsu, Yu Jiang, Yi-Chun Lai, and Hsing-Chun Kuo. "Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O2 Mixed Plasma Treatment and Rapid Thermal Annealing." Membranes 12, no. 1 (December 30, 2021): 49. http://dx.doi.org/10.3390/membranes12010049.
Повний текст джерелаBermundo, Juan Paolo, Yasuaki Ishikawa, Haruka Yamazaki, Toshiaki Nonaka, and Yukiharu Uraoka. "Highly reliable passivation layer for a-InGaZnO thin-film transistors fabricated using polysilsesquioxane." MRS Proceedings 1633 (2014): 139–44. http://dx.doi.org/10.1557/opl.2014.118.
Повний текст джерелаAl Garni, S. E., and A. F. Qasrawi. "Absorption and optical conduction in InSe/ZnSe/InSe thin film transistors." Functional Materials Letters 09, no. 02 (April 2016): 1650019. http://dx.doi.org/10.1142/s1793604716500193.
Повний текст джерелаOuyang, Zhuping, Wanxia Wang, Mingjiang Dai, Baicheng Zhang, Jianhong Gong, Mingchen Li, Lihao Qin, and Hui Sun. "Research Progress of p-Type Oxide Thin-Film Transistors." Materials 15, no. 14 (July 8, 2022): 4781. http://dx.doi.org/10.3390/ma15144781.
Повний текст джерелаHwang, Young Hwan, Seok-Jun Seo, and Byeong-Soo Bae. "Fabrication and characterization of sol-gel-derived zinc oxide thin-film transistor." Journal of Materials Research 25, no. 4 (April 2010): 695–700. http://dx.doi.org/10.1557/jmr.2010.0103.
Повний текст джерелаKwon, Choi, Bae, and Park. "Hysteresis Reduction for Organic Thin Film Transistors with Multiple Stacked Functional Zirconia Polymeric Films." Crystals 9, no. 12 (November 28, 2019): 634. http://dx.doi.org/10.3390/cryst9120634.
Повний текст джерелаKuo, Yue. "Thin Film Transistors with Layered a-Si:H Structure." MRS Proceedings 377 (1995). http://dx.doi.org/10.1557/proc-377-701.
Повний текст джерела"Modeling and Simulation Techniques of Amorphous Silicon Thin Film Transistors (TFT) for Large Area and Flexible Microelectronics." International Journal of Engineering and Advanced Technology 9, no. 5 (June 30, 2020): 270–73. http://dx.doi.org/10.35940/ijeat.e9477.069520.
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