Дисертації з теми "Thin film thermal conductivity measurement"
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Shrestha, Ramesh. "High-Precision Micropipette Thermal Sensor for Measurement of Thermal Conductivity of Carbon Nanotubes Thin Film." Thesis, University of North Texas, 2011. https://digital.library.unt.edu/ark:/67531/metadc103393/.
Повний текст джерелаFaghani, Farshad. "Thermal conductivity Measurement of PEDOT:PSS by 3-omega Technique." Thesis, Linköpings universitet, Fysik och elektroteknik, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-63317.
Повний текст джерелаThuau, Damien. "Fabrication and characterisation of carbon-based devices." Thesis, University of Edinburgh, 2012. http://hdl.handle.net/1842/5879.
Повний текст джерелаBogner, Manuel. "Thermal conductivity measurements of thin films using a novel 3 omega method." Thesis, Northumbria University, 2017. http://nrl.northumbria.ac.uk/36186/.
Повний текст джерелаZink, Barry Lee. "Specific heat and thermal conductivity of thin film amorphous magnetic semiconductors /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2002. http://wwwlib.umi.com/cr/ucsd/fullcit?p3070996.
Повний текст джерелаMunro, Troy Robert. "Thermal Property Measurement of Thin Fibers by Complementary Methods." DigitalCommons@USU, 2016. https://digitalcommons.usu.edu/etd/4702.
Повний текст джерелаHarris, Kurt E. "Characterization of Carbon Nanostructured Composite Film Using Photothermal Measurement Technique." DigitalCommons@USU, 2018. https://digitalcommons.usu.edu/etd/6931.
Повний текст джерелаKim, Ick Chan. "Experimental investigation of size effect on thermal conductivity for ultra-thin amorphous poly(methyl methacrylate) (PMMA) films." [College Station, Tex. : Texas A&M University, 2007. http://hdl.handle.net/1969.1/ETD-TAMU-1348.
Повний текст джерелаLankford, Maggie E. "Measurement of Thermo-Mechanical Properties of Co-Sputtered SiO2-Ta2O5 Thin Films." University of Dayton / OhioLINK, 2021. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1627653071556618.
Повний текст джерелаOsborne, Daniel Josiah. "A Nanoengineering Approach to Oxide Thermoelectrics For Energy Harvesting Applications." Thesis, Virginia Tech, 2010. http://hdl.handle.net/10919/36133.
Повний текст джерелаMaster of Science
Khwaja, Moinuddin. "Carbon nanotube sheet for structural health monitoring and thermal conductivity in laminated composites." University of Cincinnati / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1562842660883351.
Повний текст джерелаMittal, Arpit. "Monte-Carlo Study of Phonon Heat Conduction in Silicon Thin Films." The Ohio State University, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=osu1259602975.
Повний текст джерелаZhang, Daxi. "Study of the 3w Measurement of the In-Plane and the Cross-Plane Thermal Properties on Anisotropic Thin Film Materials." DigitalCommons@USU, 2018. https://digitalcommons.usu.edu/etd/7356.
Повний текст джерелаYao, Yulong. "THERMAL CONDUCTIVITIES OF ORGANIC SEMICONDUCTORS." UKnowledge, 2017. http://uknowledge.uky.edu/physastron_etds/48.
Повний текст джерелаHus, Saban Mustafa. "Physical Properties Of Cdse Thin Films Produced By Thermal Evaporation And E-beam Techniques." Master's thesis, METU, 2006. http://etd.lib.metu.edu.tr/upload/12607608/index.pdf.
Повний текст джерела#937
-cm)-1 and 1.6x10-6 and 5.7x10-7 (&
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-cm)-1for the thermally evaporated and e-beam evaporated samples respectively. After B implantation conductivity of these films increased 5 and 8 times respectively. Hall mobility measurements could be performed only on the thermally evaporated and B-implanted e-beam evaporated samples and found to be between 8.8 and 86.8 (cm2/V.s). The dominant conduction mechanism were determined to be thermionic emission above 250 K for all samples. Tunneling and v variable range hopping mechanisms have been observed between 150-240 K and 80- 140 K respectively. Photoconductivity &
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illumination intensity plots indicated two recombination centers dominating at the low and high regions of studied temperature range of 80-400 K. Photoresponse measurements have corrected optical band gap measurements by giving peak value at 1.72 eV.
Pedurand, Richard. "Instrumentation for Thermal Noise Spectroscopy." Thesis, Lyon, 2019. http://www.theses.fr/2019LYSE1356.
Повний текст джерелаThe resolution limit of gravitational wave interferometers is set by their mirrors' Brownian motion – or thermal noise - in the central part of their detection band, from 10Hz to 1kHz. This thermal noise frequency distribution is given by the mechanical energy dissipation mechanisms it originates from, in agreement with the fluctuation-dissipation theorem. This dissipation mainly derives from the optical coatings deposited on the mirrors to give them their reflectivity. To reduce this thermal noise, a new generation of gravitational wave detectors employing mirrors cooled to cryogenic temperature has been suggested. The development of new optical thin-film materials with low mechanical dissipation, operating at both room and cryogenic temperatures, therefore requires new experimental tools. The main object of this thesis is the construction of a new instrument, the CryoQPDI, which is an association between a high-resolution interferometer and a cryostat based on a pulse tube cooler. It can directly measure the Brownian motion of a microcantilever between 300 K and 7 K. By combining measurements made on a microcantilever before and after the deposition of a thin film, it is possible to characterize the internal mechanical dissipation of this thin film. This instrument will eventually contribute to the optimisation of optical coatings of future gravitational wave detectors, aiming at minimizing the limitations due to thermal noise
Paterson, Jessy. "Etude expérimentale du transport de chaleur dans les nanomatériaux par méthodes électrothermiques." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALY039.
Повний текст джерелаThis dissertation presents an experimental study of heat transport in various types of materials that greatly differ in their structure, size and thermal properties. The motivations behind this study are multiple. The technological stakes related to the increased mastery of thermal management of current and future technologies are considerable, given the important correlation between the overall performance of a device and the efficient management of thermal gradients that develop within it. In particular, the performance of applications such as thermoelectric generators or phase-change memories are greatly enhanced when their architecture is based on materials with low thermal conductivities. From a fundamental point of view, the study of low dimensional materials, structured at scales comparable to the characteristic lengths defining heat transport, such as the mean free path of phonons or their wavelength, is of crucial importance in order to understand the mechanisms responsible for atypical thermal properties that are reported for low-dimensional and/or nanostructred materials.The experimental investigation of heat transport is carried out by means of electro-thermal methods, whose principles and foundations were particularly detailed. In particular, the 3ω method has been implemented to measure the thermal conductivity of bulk materials, thin films down to 17 nm thick, as well as thermal boundary resistances present in multilayer systems. We were able to demonstrate a reduction of more than a factor of 3 in the thermal conductivity of a crystalline germanium matrix with crystalline spherical nano-inclusions having an average diameter of 16 nm, compared to its non-nanostructured counterpart. The reduction of the thermal conductivity of this nano-structured material is attributed to phonon scattering by the spherical nano-inclusions, as well as the inter-inclusion distance, which plays an important role in reducing the mean free path of heat carriers in this heterogeneous material. A reduction in thermal conductivity by a factor of 5 is also observed in another germanium-based nanostructured material, GeTe, after the introduction of carbon -- a reduction that can be explained by the presence of nano-sized grains surrounded by amorphous carbon.The versatility of the 3ω method has allowed us to quantify the contribution of thermal boundary resistances for systems such as Pt/AI₂O₃/germanium, Pt/Ai₂O₃/sapphire or Pt/SiN/Si. Our findings indicate that the thermal boundary resistance at the AI₂O₃/germanium interface can contribute substantially to the overall thermal resistance of a multilayer system, which may be detrimental if applications based on structures with this type of interface are considered. Finally, anisotropic thermal properties have been experimentally studied on a sapphire substrate, using the 2ω method
Messaadi, Saci. "Modélisation électrique de couches ou de fils minces métalliques : Effet thermique d'interface verre-couche amorphe." Nancy 1, 1987. http://www.theses.fr/1987NAN10048.
Повний текст джерелаAKA, BOKO. "Photodecomposition sensibilisee au mercure du monosilane (hg-photo-cvd) : application au depot en couches minces de silicium amorphe hydrogene (a-si : h)." Université Louis Pasteur (Strasbourg) (1971-2008), 1989. http://www.theses.fr/1989STR13026.
Повний текст джерелаPastol, Yvon. "Etude de la cristallisation en phase solide de couches minces de silicium implantees." Paris 7, 1987. http://www.theses.fr/1987PA077142.
Повний текст джерелаChang, Tien-Yao, and 張天曜. "Development of Thin Film Thermal Conductivity Measurement." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/26393076004574920167.
Повний текст джерела國立臺灣大學
機械工程學研究所
96
By using the exact solution of a 2-layer, 2-dimensional steady state heat transport model, methods of measuring thermal conductivity of thin film are developed, while considering heat spreading effects in thin film layer. These methods are used for testing samples of dielectric thin film deposit on silicon substrate, with metal lines served as heater/thermometer deposit on it. Most other measurements for thin film ignore effect of in-plane heat flow in the film area in their theories. This assumption will cause a large error when film thickness gets thicker, especially when it’s larger than micrometer. Base on the 2-dimensional exact solution, we discuss relations between spreading resistance and ratio of heat flux in film area and parameters of the model are made. From this, measurements with larger suitable range of film thickness are developed. Two different measurements will be introduced in this thesis. One is the parallel line method which set another metal line parallel to heater line for thermometer. Thermal conductivity of the film is calculated by temperature difference between the two lines.The error of this method is less than 3.5% in range of film thickness 10nm ~ 1 and thermal conductivity lower than 10 W/mK. Another measurement is the thickness difference method. This method needs two sets of samples which have different film thickness while all other parameters are the same. Thermal conductivity is calculated by the difference of heating line temperature on the two samples. The error of this method is less than 5% in range of film thickness 10 ~ 1000 and thermal conductivity lower than 10 W/mK.
Lai, Wei-Chih, and 賴威志. "Measurement and discussion of dielectric thin film thermal conductivity." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/73481943562454649947.
Повний текст джерела國立清華大學
微機電工程研究所
95
Heat transport in 30–300 nm thick dielectric films is characterized in the temperature range of 74–300 K using the 3ω method, which is a simple method to measure the cross-plane thermal conductivity of dielectric thin films. Dielectric film samples of two kinds, deposited on Si substrates using plasma enhanced chemical vapor deposition (PECVD) and grown by thermal oxidation, were measured in the cryogenics system. The apparent thermal conductivity, intrinsic thermal conductivity, and interface resistance have been analyzed in different environment temperature. The measured data with this method were verified with the measurement results from published data, which showed satisfactory agreement. For this experiment, we discovered the thermal conductivity of PECVD SiO2 films was smaller than the conductivity of SiO2 grown by thermal oxidation, because the porosity of thermal SiO2 is smaller than PECVD SiO2. The apparent thermal conductivity of SiO2 films decreases with film thickness. The thickness dependent thermal conductivity is interpreted in terms of a small interface thermal resistance RI. For SiO2 films, the thermal conductivity decreases if the temperature decreases, because the mean free path of heater carriers increases. 3ω method combined with the cryogenics system could not only measure the thermal conductivity of SiO2 accurately, but also treat the influence of thermal conductivity on different temperature environment. In the future, we could broaden the use of this combination to measure other thin films.
Chiu, Liang-Wei, and 邱亮維. "Thermal conductivity measurement of metal thin films." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/21069261177761887248.
Повний текст джерела國立清華大學
工程與系統科學系
93
Thin film materials are basic components of micro solid-state devices. There will be a great contribution to efficiency and heat transfer characteristics of micro devices if we can understand the thermal conductivity properties of thin films efficiently. Furthermore, it will be related to lifetime of micro devices. When the dimension of thin film material shrunk down to micron or nano scale, the thermal conductivity of thin film will be different from its bulk material property. Hence, in past ten years recently, some reliable experimental techniques are developed to measure thermal conductivity of thin films. In this thesis, thermal conductivity of metal thin films are measured by 3ω method and heat pulse method, respectively. And this study evaluated the feasibility and accuracy of two experimental techniques from the problems and data results obtained in measurement steps.
Liu, Yu-Ting, and 劉昱霆. "Methods of Thermal Conductivity Measurement for Bulk、Thin Film and Nanowire." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/76zpf7.
Повний текст джерела國立中央大學
電機工程學系
104
In recent years, studies of thermoelectric have broken through the bottleneck due to the development of semiconductor manufacturing technology and the understanding of nano-scale materials. ZT value has been improved not only for bulks, but also for thin-film and nano-wires. But the current machines are limited to measure thermal conductivity for bulk. The measurements for thin-film and nanowire are different from the conventional one. In this thesis, we studied the laser flash method to measure the thermal conductivity of bulk, the 3-Omega method for thin-film and introduced the electrically heating measurement with a floating structure for nanowire. We established the measurement and verified the correction of the results. The measurement results of ZnO bulk were comparable with previous reports, while 200 nm thick SiO2 thin film grown by PECVD in room temperature was measured ~ 0.9 (W/mK), corresponding to the theoretical value. The measurement result of 2 μm FeSi2 thin film from 300K to 500K was 5.8 ~ 8.1 (W/mK).
Sun, Wei-Che, and 孫偉哲. "Measurement method and discussion of thin (thick) film material thermal conductivity." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/64776734651402500266.
Повний текст джерела國立清華大學
動力機械工程學系
98
It is well known that material prosperities will be different as the material in micro and nano scale. For instance, the effect of interface boundary and the carriers such as phonon and free-electron scattering have become the primary issue in thin film material. In this study, measurements of thermal conductivities of phase change memory material and several dielectric films by 3ω method is investigated. However, the limitation of 3ω method restricts the film thickness under 1 μm. For film thickness of 1um to 1 mm, further studies of pertinent measuring methods such as parallel-strip method and thickness difference method are constructed. Parallel-strip method is suitable for film thickness of 50 nm to 2 μm. The intrinsic thermal conductivities and boundary thermal resistances of three kinds of SiO2 films are measured, in which these specific SiO2 films are fabricated by PECVD deposition, thermal furnace growing and E-bean deposition respectively. In addition, thickness difference method is suitable for thick films where film thickness is in a range of 10 μm to 1 mm. The intrinsic thermal conductivities of three kinds of SU8-3050 thick films are also measured, in which the thickness of these specific SU8-3050 films are 42, 70 and 95 μm respectively. In short, the objective of this work provides three methods which thermal conductivities and boundary thermal resistance of dielectric films are characterized and are verified with the theory and literatures.
"Construction of a Thermal Conductivity Measurement Platform for Bulk and Thin Film Materials Based on the 3-Omega Technique." Master's thesis, 2014. http://hdl.handle.net/2286/R.I.27485.
Повний текст джерелаDissertation/Thesis
Masters Thesis Mechanical Engineering 2014
Wei, Chu Chen, and 朱陳崴. "Research of thermal conductivity and thermal expansion of thin film." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/19777608986005717530.
Повний текст джерела國立中央大學
光電科學研究所
87
The reaserch is introduction how to measurement the thermal conductivity of metal and dielectric thin film.And measurement the thermal conductivity of several material.Understand the relationship about thermal conductivity and optical constant(refractive index,extinction coefficient,thickness).Reaserch thermal expansion of narrow band pass filter.Find the relationship about thermal conductivity and thermal expansion.
Chang, Tai-Ming, and 張泰鳴. "The analysis of lattice thermal conductivity in thin film." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/81212925933909533052.
Повний текст джерела國立臺灣大學
機械工程學研究所
93
The lattice thermal conductivity of a thin film structure is a critical issue to improve the figure of merit of thermoelectric materials. The main purpose of this thesis is to re-establish a theory for calculating the in-plane lattice thermal conductivity of a thin film. The theory is constructed based on the particle-concept. The phonon Boltzmann transport equation with the relaxation time approximation is solved. For completeness and consistency, the proposed theory takes into account (i) the modification of the acoustic phonon dispersion relation due to spatial confinement, (ii) the change in the non-equilibrium phonon distribution due to partially diffuse boundary scattering, (iii) the frequency -dependence of the phonon group velocity, and (iv) the adoption of the maximum allowed wave vector in order to calculate the Debye temperature according to the modified phonon dispersion relation. From the calculations, we predict that the decrease of the phonon group velocity and the Debye temperature, the increase of the boundary roughness and the enhanced phonon scattering lead to a significant reduction of the lattice thermal conductivity. The sensitivities of the thermal conductivity on the temperature, the boundary roughness, and the film thickness agree well recent theoretical and experimental investigations.
CAI, ZHENG-HONG, and 蔡政宏. "Analysis and measurement of metal thin-film thermal detector." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/38902861701552940442.
Повний текст джерелаLiu, Yu-Wei, and 劉又維. "The analsis of in-plane lattice thermal conductivity of thin-film superlattices." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/10381130011776327810.
Повний текст джерела國立臺灣大學
機械工程學研究所
94
It is known that the thermal conductivity of a thin-film superlattices semiconductor has a larger figure-of-merit, mainly because its thermal conductivity is significantly reduced by the size effects. The goal of this study is to re-establish a theory for calculating/predicting the in-plane lattice thermal conductivity of a thin-film superlattices semiconductor. The theory is particle-based for the thickness of each layer still being larger than the phonon coherent length scale. The phonon Boltzmann transport equation is thus solved under the single relaxation-time approximation and proper boundary conditions. From the calculation results of the present model, it is found that the phonon heat flow rate is largely decreased due to the infinitely many interactions between phonons and the partially specular and partially diffuse interfaces through reflections and refractions. Moreover, the thinner each layer, the stronger the interface scattering effect is. An optimum thickness ratio resulting in a minimum lattice thermal conductivity is also found due to a balance between the difference of the intrinsic thermal conductivities and the boundary scattering effect. It is also shown that the predicted thermal conductivities also agree well with the experimental measurements. Finally, the temperature-memory effect on the lattice thermal conductivity is found to be negligible at room temperature.
Chien, Heng-Chieh, and 簡恒傑. "Novel Methods Development for Measuring Thermal Conductivity of Micro/Nanoscale Thin-Film." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/69029482971608413612.
Повний текст джерела國立清華大學
工程與系統科學系
98
Many methods for the measurement of the thermal conductivity of thin films have been reported in the previous scientific literatures. Because each class of thin-film structure presents an almost unique set of experimental impediments to overcome, no particular measurement method has become universally accepted. Therefore, different strategies and many techniques are needed for developing a simple, convenient and reliable measurement method for each class thin-film. In this study, we had derived a set of mathematical analytical solution from a complete heater-film-substrate system model. Based on the analytical solutions, we had successfully developed three novel methods for three different thickness ranges of thin/thick film. In the range of film thickness between 50 nm to 2 μm, a novel method, called parallel-strip method, had been developed and three types of SiO2 been measured in that work. The measured results agree with that of the previous literatures. In the range between 2 μm to 10 μm, a modified parallel-strip method had been developed and four types of thermoelectric thin films fabricated by electrodeposition process had been measured, also an epoxy resin layer, substitute for SiO2 to serve as the dielectric layer, were introduced to the sample preparing process. For thick-film of 10 μm to 1000 μm in thickness, a novel method, called thickness difference method, had been built. The method is very simple because derived from a concise semi-empirical correlation. SU8 thick film had been tested by using the novel method and yielded a quite accurate result compared with the previous literatures. By using parallel-strip method and a sandwiched film structure, metal-dielectric interfacial thermal resistance had also been studied in this work. A metal layer of thickness about 10 nm, including Cr (chromium), Ti (titanium), Al (aluminum), Ni (nickel) and Pt (platinum), is sandwiched between two PECVD SiO2 layers of thickness 100 nm. The estimates, 10-10~10-9 m2 K/W, calculated with a continuum two-fluid model are significantly smaller than the measured values, ~10-8 m2 K/W. The continuum two-fluid model, which according to the phenomena of electron-phonon nonequilibrium near the interface in a metal, cannot explain completely the cause of this metal-dielectric interfacial thermal resistance. From photographs of the TEM cross section, we argue that defects at an interface likely play an important role in the magnitude of the interfacial thermal resistance.
Liang, Yu-Chih, and 梁育誌. "The Thermal Conductivity Model Analysis of Thin-Film Material for Organic Emitting Layer." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/zy5t55.
Повний текст джерела國立臺北科技大學
光電工程系研究所
98
The purpose of thesis research is to estimate the thermal conductivity of organic light-emitting thin-film material in Organic Light Emitting Diode (OLED) by means of solving two-dimensional heat transfer equation with simplified two-layer structure. The thermal conductivity of the organic light-emitting layer was obtained from fitting our parametric model to the experiment data acquired by our surface temperature measurement system. The parametric model developed in this study was first applied to single-layer Si and SiO2 for verifying its accuracy. The thermal conductivity of Si determined from our parametric model is between 130 and 147 W/m.℃, very close to acceptable reference. The thermal conductivity of ITO glass is also determined between 54 and 76 W/m.℃. The thermal conductivity of the organic light-emitting material (Alq3) is estimated between 0.28 and 0.29 W/m.℃, the same order with well-known organic compounds.
Yi-TiWang and 王奕迪. "Measurement and Analysis of Thermal expansion Coefficient and Thermal Diffusivity of Thin Film Specimens." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/51583424711077432438.
Повний текст джерела國立成功大學
機械工程學系碩博士班
101
This research focuses on the thermal expansion coefficient and thermal diffusivity of thin film specimens. In the past studies, without a simple and versatile method of measurement, the methods of measuring the thermal expansion coefficient are many restrictions on the material often, such as crystallinity and electric conductivity. In the present study, the thermal expansion coefficient can be estimated by measuring the change of the radius of curvature of the thin film specimens surface morphology under difference temperature. With taking advantage of the material properties, the difference of the thermal expansion coefficients between thin film structure and the substrate will cause the whole structure bending and changing the radius of curvature. The method is not restricted to material, is a simple and fast method of measurement. To measure the thermal diffusivity, the heat conduction solution in the multi-layered specimens is developed to be one-dimensional and varying with the amplitude and frequency of the oscillating temperature imposed. The phase lag of temperature due to the difference layers of the thin film can be expressed as a function of film thickness, oscillating temperature frequency, and thermal diffusivity. Experimentally, with a varying frequency of the oscillating temperature imposed by the peltier beneath the specimen’s substrate, the thermocouples are placed to have their tip in contact with the top surfaces of two adjacent layers individually in order to measure temperature signal of these two surfaces. Then the measured signals are analyzed by Lock-in amplifier to obtain the temperature phase lag. This phase lag value is then substituted into the previously developed phase lag expression to determine the thermal diffusivity of the thin film specimen.
Chang, Jung-en, and 張榮恩. "Fabrication and measuring analysis of low thermal conductivity thin film with multi-layered Ge quantum dots array." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/86786011905367968450.
Повний текст джерела國立中央大學
電機工程研究所
99
The study of this thesis is that using the method of selective oxidation of SiGe, to form multi-layered Ge quantum dots (QDs) array embedded in dielectric thin film such as SiO2 or Si3N4. By use of the low dimensional property of Ge QD itself and changing the ambient materials, we can produce thin film which the thermal conductivity is very low. We also measured the thermal conduction and electrical conduction properties of these Ge QDs thin films, and this is the foundation of developing thermoelectric devices in the future. For thermal conductivity measurement, we use the steady state method to measure thermal SiO2, LPCVD Si3N4, Ge QDs array embedded in SiO2, and Ge QDs array embedded in Si3N4 thin film. The thickness of these thin films is in the range between tens and hundreds of nanometer. According to the measurement result, we’ve found that it can reduce the thermal conductivity effectively as Ge QDs array is embedded in dielectric such as SiO2 and Si3N4, and the thermal conductivity is approximately 0.2 to 0.8 W/mK at the temperature from 78 K to 430 K. This result is much lower than pure SiO2 and Si3N4 thin film, which the thermal conductivity is near 1 and 1-2 W/mK respectively at room temperature. For electrical conductivity measurement, we have doped phosphorous ions into the multi-layered Ge QDs array by implantation to enhance the conducting current and the electrical conductivity. We have found that the electrical conductivity is increased by about 2 to 3 orders after implanted.
Bora, Achyut. "Investigation Of Damage Process In Current Stressed Metal Film Using Noise Spectroscopy, Scanning Thermal Microscopy And Simulation Studies." Thesis, 2007. http://hdl.handle.net/2005/886.
Повний текст джерелаΠαλιάτσας, Νικόλαος. "Μελέτη θερμικής γήρανσης λεπτών υμενίων PEDOT:PSS με μετρήσεις ειδικής αγωγιμότητας συνεχούς ρεύματος". Thesis, 2008. http://nemertes.lis.upatras.gr/jspui/handle/10889/944.
Повний текст джерелаIn this work the thermal aging of the copolymer poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) has been investigated by measuring the d.c. conductivity σ and photoelectron spectroscopy data (XPS, XAES, UPS). For this study thin films of PET PEDOT:PSS of 50 and 180 nm of thickness were used. The temperatures of the thermal treatment were 120 0C, 150 0C and 170 0C and the times of this process varied between 0 and 100 hours approximately. For the d.c. conductivity data, the Mott’s variable range hopping model was used, described by the following relation: (VRH) where T is the absolute temperature, σ0, T0 parameters depending on the material and α an exponent, which is related to the number of dimensions of the transport by hopping of a carrier in and between the PEDOT chains. These measurements showed that the thermal treatment has as a result the aging of the samples, which was more intense for the 50 nm films, proving that the increase of the samples thickness reduces significantly the thermal aging. The spectroscopic measurements showed that the thermal treatment leads to the removal the PSS percentage on the surface of the specimen. It was found also, that the value of the work function of the samples decreases with aging. Finally, the effect of the stability of d.c. conductivity value during prolonged heating at constant temperature, as well as the rate of the thermal treatment and the composition of the surrounding atmosphere on the electrical conductivity were investigated. It was found that in all cases, an insulator – metal transition (IMT) was taking place near the temperature of 400 K. The exact temperature of this transition depends on the changes taking place in the structure of the films. From the experimental curves after heating the 120 nm samples with constant rate for temperatures between 100 0C and 190 0C, it was found that it is possible to have either, deterioration or improvement of the conductivity. These phenomena were attributed to two different competitive mechanisms. Finally, the comparison of the results of the thermal treatment under atmospheric conditions and under inert atmosphere of He, showed that thermal aging is more intense in the first case, due to irreversible structural changes brought about by oxidization in the presence of moisture and oxygen in the PEDOT chains. On the other hand, it was found that the electrical properties were improved significantly by heating under the inert atmosphere of He.
Fang, Jung-shian, and 方忠顯. "Measurement of Coefficient of Thermal Expansion, Young’s Modulus and Poisson’s Ratio of the Thin Film by Optical Interferometry and Nanoindentation System." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/22581732136563523124.
Повний текст джерела逢甲大學
機械工程學所
94
Since the system components become smaller, the thin film materials are widely applicable. The thin films are the constituent materials of MEMS and NEMS and therefore the reliability of components are considerably influenced by the mechanical properties of thin films. In addition, the thickness of thin films is rather small and their mechanical properties are significantly different from those of bulk materials. Hence, more and more researchers place their emphasis on the characterization of mechanical properties of thin film materials. In this thesis, a novel method, which combines the nanoindentation method and phase-shifting optical interferometry, will be developed to measure the mechanical properties of thin films. The Young’s modulus, Poisson’s ratio and coefficient of thermal expansion of thin films can be simultaneously obtained through the proposed experimental technique. As compare with the traditional nanoindentaion method, this technique can improve the measured accuracy of Young’s modulus. Furthermore, the proposed technique can be utilized to measure the Poisson’s ratio and coefficient of thermal expansion, which cannot be extracted from the present nanoindentation method.