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Статті в журналах з теми "Thin Film Strain Gauges (TFSG)"

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Автор: Grafiati

Опубліковано: 6 вересня 2023

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1

Cui, Yunxian, Xin Li, Tenglun Zhang, Wanyu Ding, and Junwei Yin. "Development of High-Temperature Wire-Grid Thin Film Strain Gauges." Sensors 22, no. 19 (October 7, 2022): 7595. http://dx.doi.org/10.3390/s22197595.

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Aero-engine turbine stator blades are often used in harsh environments with high temperatures and high pressure and are prone to fatigue fractures. Real-time and accurate monitoring of blade surface stress and strain is critical to ensure safe operation. In this study, thin-film strain gauges (TFSGs) that can be used in high-temperature environments above 1000 °C were designed and fabricated using a PtRh6 thin film as the sensitive material. The hysteresis effect of the stress transfer upon establishing a thermo-mechanical coupling finite element model of the Inconel718 high-temperature nickel-based alloy equal-strength beam PtRh6 TFSGs was analyzed and the optimal combination of thin-film thickness and longitudinal grid length of wire-grid TFSGs was determined. In order to solve the problem of high-temperature insulation, the insulating properties of a single-layer Al2O3 insulating film, a single-layer ZrO2 insulating film, a double-layer Al2O3/ZrO2 composite insulating film, and a four-layer Al2O3/ZrO2/Al2O3/ZrO2 composite insulating film at high temperature were compared and studied using scanning electron microscopy to analyze the microscopic morphology and composition of the four insulating film structures. The results showed that the four-layer Al2O3/ZrO2/Al2O3/ZrO2 composite insulating film had the best insulating properties at high temperatures. On this basis, an Al2O3/ZrO2/Al2O3/ZrO2 composite insulating film, PtRh6 sensitive layer, and Al2O3 protective film were sequentially deposited on a high-temperature nickel-based alloy equal-strength beam using DC pulsed magnetron sputtering technology to obtain an Inconel718 high-temperature nickel-based alloy equal-strength beam PtRh6 TFSG. Its gauge factor (GF) and temperature coefficient of resistance (TCR) were calibrated, and the results showed that the sensor could be used in harsh environments of 1000 °C. The above results provide new ideas for measuring stress and strain in aerospace under high-temperature and high-pressure environments.

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2

Li, Chunshien, P. J. Hesketh, and G. J. Maclay. "Thin gold film strain gauges." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12, no. 3 (May 1994): 813–19. http://dx.doi.org/10.1116/1.578828.

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3

Kayser, P., J. C. Godefroy, and L. Leca. "High-temperature thin-film strain gauges." Sensors and Actuators A: Physical 37-38 (June 1993): 328–32. http://dx.doi.org/10.1016/0924-4247(93)80055-l.

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4

Lin, Fan, Xiaochuan Pan, Chao Wu, Yingjun Zeng, Guochun Chen, Qinnan Chen, Daoheng Sun, and Zhenyin Hai. "ZrB2/SiCN Thin-Film Strain Gauges for In-Situ Strain Detection of Hot Components." Micromachines 13, no. 9 (September 4, 2022): 1467. http://dx.doi.org/10.3390/mi13091467.

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The in-situ strain/stress detection of hot components in harsh environments remains a challenging task. In this study, ZrB2/SiCN thin-film strain gauges were fabricated on alumina substrates by direct writing. The effects of ZrB2 content on the electrical conductivity and strain sensitivity of ZrB2/SiCN composites were investigated, and based on these, thin film strain gauges with high electrical conductivity (1.71 S/cm) and a gauge factor of 4.8 were prepared. ZrB2/SiCN thin-film strain gauges exhibit excellent static, cyclic strain responses and resistance stability at room temperature. In order to verify the high temperature performance of the ZrB2/SiCN thin-film strain gauges, the temperature-resistance characteristic curves test, high temperature resistance stability test and cyclic strain test were conducted from 25 °C to 600 °C. ZrB2/SiCN thin-film strain gauges exhibit good resistance repeatability and stability, and highly sensitive strain response, from 25 °C to 600 °C. Therefore, ZrB2/SiCN thin-film strain gauges provide an effective approach for the measurement of in-situ strain of hot components in harsh environments.

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5

Broitman, E., and R. Zimmerman. "Ion-plated discontinuous thin film strain gauges." Thin Solid Films 317, no. 1-2 (April 1998): 440–42. http://dx.doi.org/10.1016/s0040-6090(97)00637-8.

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6

Schmaljohann, F., D. Hagedorn, and F. Löffler. "Thin film sensors for measuring small forces." Journal of Sensors and Sensor Systems 4, no. 1 (February 23, 2015): 91–95. http://dx.doi.org/10.5194/jsss-4-91-2015.

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Abstract. Especially in the case of measuring small forces, the use of conventional foil strain gauges is limited. The measurement uncertainty rises by force shunts and is due to the polymer foils used, as they are susceptible to moisture. Strain gauges in thin film technology present a potential solution to overcome these effects because of their direct and atomic contact with the measuring body, omitting an adhesive layer and the polymer foil. For force measurements up to 1 N, a suitable deformation element was developed by finite element (FE) analysis. This element is designed for an approximate strain of 1000 μm m−1 at the designated nominal load. The thin film system was applied by magnetron sputtering. The strain gauge structure is fabricated by distinct photolithographic steps. The developed sensors were tested with different load increments. The functional capability of the single resistance strain gauges could be proven. Moreover, a developed sensor in a full bridge circuit showed a linear characteristic with low deviation and good stability.

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7

Mathis, Maximilian, Dennis Vollberg, Matthäus Langosch, Dirk Göttel, Angela Lellig, and Günter Schultes. "Creep adjustment of strain gauges based on granular NiCr-carbon thin films." Journal of Sensors and Sensor Systems 10, no. 1 (March 12, 2021): 53–61. http://dx.doi.org/10.5194/jsss-10-53-2021.

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Abstract. An important property of high-precision mechanical sensors such as force transducers or torque sensors is the so-called creep error. It is defined as the signal deviation over time at a constant load. Since this signal deviation results in a reduced accuracy of the sensor, it is beneficial to minimize the creep error. Many of these sensors consist of a metallic spring element and strain gauges. In order to realize a sensor with a creep error of almost zero, it is necessary to compensate for the creep behavior of the metallic spring element. This can be achieved by creep adjustment of the used strain gauges. Unlike standard metal foil strain gauges with a gauge factor of 2, a type of strain gauges based on sputter-deposited NiCr-carbon thin films on polymer substrates offers the advantage of an improved gauge factor of about 10. However, for this type of strain gauge, creep adjustment by customary methods is not possible. In order to remedy this disadvantage, a thorough creep analysis is carried out. Five major influences on the creep error of force transducers equipped with NiCr-carbon thin-film strain gauges are examined, namely, the material creep of the metallic spring element (1), the creep (relaxation) of the polymer substrate (2), the composition of the thin film (3), the strain transfer to the thin film (4), and the kind of strain field on the surface of the transducer (5). Consequently, we present two applicable methods for creep adjustment of NiCr-carbon thin- film strain gauges. The first method addresses the intrinsic creep behavior of the thin film by a modification of the film composition. With increasing Cr content (at the expense of Ni, the intrinsic negative creep error can be shifted towards zero. The second method is not based on the thin film itself but rather on a modification of the strain transfer from the polyimide carrier to the thin film. This is achieved by controlled cutting of well-defined deep trenches into the polymer substrate via a picosecond laser.

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8

Grange, H., C. Maeder, C. Bieth, S. Renard, and G. Delapierre. "Thin film strain gauges on polymers: main characteristics." Sensors and Actuators A: Physical 46, no. 1-3 (January 1995): 213–17. http://dx.doi.org/10.1016/0924-4247(94)00892-l.

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9

Mathis, Maximilian, Dennis Vollberg, Matthäus Langosch, Dirk Göttel, Angela Lellig, and Günter Schultes. "Novel method to reduce the transverse sensitivity of granular thin film strain gauges by modification of strain transfer." Journal of Sensors and Sensor Systems 9, no. 2 (July 17, 2020): 219–26. http://dx.doi.org/10.5194/jsss-9-219-2020.

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Abstract. Strain gauges based on polyimide carrier foils and piezoresistive granular thin films are highly sensitive to strain. Unlike conventional metal foil, granular film strain gauges also have a pronounced sensitivity to strain acting in the transverse direction. A novel method that allows for the modification of the strain transfer is proposed and proven experimentally. The method is based on the creation of stand-alone polyimide paths, on top of which the piezoresistive thin film is located. In this way, the granular film hardly receives any transverse strain; hence, the transverse sensitivity is drastically reduced. A picosecond laser system can be used for both patterning of the thin film and for controlled ablation of polyimide in order to generate well-defined high path structures. The working principle of the method is demonstrated by simulation, followed by an experimental verification using measurements of the transverse gauge factor. Furthermore, the output signal of force transducers may be increased using granular thin film strain gauges of reduced transverse sensitivity.

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10

Brandt, Bjoern, Marion Gemeinert, Ralf Koppert, Jochen Bolte, and Torsten Rabe. "LTCC Substrates for High Performance Strain Gauges." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, CICMT (September 1, 2012): 000175–80. http://dx.doi.org/10.4071/cicmt-2012-tp43.

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Recent advances in the development of high gauge factor thin-films for strain gauges prompt the research on advanced substrate materials. A glass ceramic composite has been developed in consideration of a high coefficient of thermal expansion and a low modulus of elasticity for the application as support material for thin-film sensors. Constantan foil strain gauges were fabricated from this material by tape casting, pressure-assisted sintering and subsequent lamination of the metal foil on the planar ceramic substrates. The sensors were mounted on a strain gauge beam arrangement and load curves and creep behavior were evaluated. The accuracy of the assembled load cells correspond to accuracy class C6. That qualifies the load cells for the use in automatic packaging units and confirms the applicability of the LTCC substrates for fabrication of accurate strain gauges. To facilitate the deposition of thin film sensor structures onto the LTCC substrates, the pressure-assisted sintering technology has been refined. By the use of smooth setters instead of release tapes substrates with minimal surface roughness were fabricated. Metallic thin films deposited on these substrates exhibit low surface resistances comparable to thin films on commercial alumina thin-film substrates. The presented advances in material design and manufacturing technology are important to promote the development of high performance thin-film strain gauges.

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11

Heikebrügge, S., R. Ottermann, B. Breidenstein, M. C. Wurz, and F. Dencker. "Residual Stresses from Incremental Hole Drilling Using Directly Deposited Thin Film Strain Gauges." Experimental Mechanics 62, no. 4 (January 14, 2022): 701–13. http://dx.doi.org/10.1007/s11340-022-00822-0.

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Abstract Background Commonly, polymer foil-based strain gauges are used for the incremental hole drilling method to obtain residual stress depth profiles. These polymer foil-based strain gauges are prone to errors due to application by glue. For example zero depth setting is thus often erroneous due to necessary removal of polymer foil and glue. This is resulting in wrong use of the calibration coefficients and depth resolution and thus leading to wrong calculations of the obtained residual stress depth profiles. Additionally common polymer foil-based sensors are limited in their application regarding e.g. exposure to high temperatures. Objective This paper aims at a first step into the qualification of directly deposited thin film strain gauges for use with the incremental hole drilling method. With the directly deposited sensors, uncertainties regarding the determination of calibration coefficients and zero depth setting due to the absence of glue can be reduced to a minimum. Additionally, new areas of interest such as the investigation of thermally sprayed metallic layers can be addressed by the sensors due to their higher temperature resilience and their component inherent minimal thickness. Methods For the first time, different layouts of directly deposited thin film strain gauges for residual stress measurements were manufactured on a stainless steel specimen. Strain measurements during incremental hole drilling using a bespoke hole drilling device were conducted. Residual stress depth profiles were calculated using the Integral method of the ASTM E837 standard. Afterwards, strain measurements with conventional polymer foil-based strain gauges during incremental hole drilling were conducted and residual stress depth profiles were calculated accordingly. Finally the obtained profiles were compared regarding characteristic values. Results The residual stress depth profiles obtained from directly deposited strain gauges generally match the ones obtained from conventional polymer foil based strain gauges. With the novel strain gauges, zero depth setting is simplified due to the absence of glue and polymer foil. With the direct deposition, a wide variety of rosette designs is possible, enabling a more detailed evaluation of the strain field around the drilled hole. Conclusions The comparative analysis of the obtained residual stress depth profiles shows the general feasibility of directly deposited strain gauges for residual stress measurements. Detailed investigations on uncertainty sources are still necessary.

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12

Danışman, Murat, and Nurhan Cansever. "NiCr Thin Film Strain Gauges Fabricated on Glass Substrates." Materials Testing 55, no. 10 (October 2013): 755–58. http://dx.doi.org/10.3139/120.110498.

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13

Nayak, M. M., K. Rajanna, N. Gunasekaran, A. E. Muthunayagam, S. Mohan, and K. Mohan Ram. "Sputtered thin-film strain gauges for differential pressure measurement." IEEE Transactions on Instrumentation and Measurement 45, no. 1 (1996): 335–39. http://dx.doi.org/10.1109/19.481365.

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14

Kim, Ju-Hyung, Yuchen Liang, and Soonmin Seo. "Patchable thin-film strain gauges based on pentacene transistors." Organic Electronics 26 (November 2015): 355–58. http://dx.doi.org/10.1016/j.orgel.2015.08.005.

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15

Rajanna, K., S. Mohan, M. M. Nayak, N. Gunasekaran, and A. E. Muthunayagam. "Pressure transducer with Au-Ni thin-film strain gauges." IEEE Transactions on Electron Devices 40, no. 3 (March 1993): 521–24. http://dx.doi.org/10.1109/16.199357.

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16

Cheng, Yun Ping, Wen Ge Wu, Xiao Jun Du, and Chun Hua An. "Microfabrication and Characterization of Tool Embedded Ni-Chrome Thin Film Micro-Sensors for Cutting Force Measurement." Key Engineering Materials 693 (May 2016): 1074–81. http://dx.doi.org/10.4028/www.scientific.net/kem.693.1074.

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This paper investigated the fabrication and design of embedded Ni-chrome thin-film strain gauges as micro-sensors in tool holders to measure the cutting force in machining operations. A Ni-chrome thin film as piezoresistive material sensor device is embedded within a substrate structure through brazing bonding process, which consists of a Ti6Al4V substrate, a Nickel-chromium thin film sensor and an Alumina insulating layer. The thin-films were characterized by 3D Super Depth Digital Microscope, SEM/EDS, Stylus profiler, to study microstructure, material composition, thickness and sheet resistance respectively. The thin-film strain gauges are calibrated in a cantilever beam setup. Accordingly, in-process cutting force measurement systems are established. The results showed that the thin-film sensor had good linearity and more elaborate structure and superior properties.

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17

Chung, Gwiy-Sang, Hyung-Soon Woo, Sun-Chul Kim, and Dae-Sun Hong. "Fabrication and Characteristics of Tantalum Nitride Thin-Film Strain Gauges." Journal of Sensor Science and Technology 13, no. 4 (July 31, 2004): 303–8. http://dx.doi.org/10.5369/jsst.2004.13.4.303.

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18

Liu, Hao, Shuwen Jiang, Hongchuan Jiang, Xiaohui Zhao, and Wanli Zhang. "Preparation and evaluation of PdCr thin film resistive strain gauges." Journal of Physics: Conference Series 939 (December 2017): 012023. http://dx.doi.org/10.1088/1742-6596/939/1/012023.

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19

Klaas, Daniel, Rico Ottermann, Folke Dencker, and Marc Christopher Wurz. "Development, Characterisation and High-Temperature Suitability of Thin-Film Strain Gauges Directly Deposited with a New Sputter Coating System." Sensors 20, no. 11 (June 10, 2020): 3294. http://dx.doi.org/10.3390/s20113294.

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New sensor and sensor manufacturing technologies are identified as a key factor for a successful digitalisation and are therefore economically important for manufacturers and industry. To address various requirements, a new sputter coating system has been invented at the Institute of Micro Production Technology. It enables the deposition of sensor systems directly onto technical surfaces. Compared to commercially available systems, it has no spatial limitations concerning the maximum coatable component size. Moreover, it enables a simultaneous structuring of deposited layers. Within this paper, characterisation techniques, results and challenges concerning directly deposited thin film strain gauges with the new sputter coating system are presented. Constantan (CuNiMn 54/45/1) and NiCr 80/20 are used as sensor materials. The initial resistance, temperature coefficient of resistance and gauge factor/k-factor of quarter-bridge strain gauges are characterised. The influence of a protective layer on sensor behaviour and layer adhesion is investigated as well. Moreover, the temperature compensation quality of directly deposited half-bridge strain gauges is evaluated, optimised with an external trimming technology and benchmarked against commercial strain gauges. Finally, the suitability for high-temperature strain measurement is investigated. Results show a maximum operation temperature of at least 400 °C, which is above the current state-of-the-art of commercial foil-based metal strain gauges.

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20

Engel, J., J. Chen, and C. Liu. "Strain sensitivity enhancement of thin metal film strain gauges on polymer microscale structures." Applied Physics Letters 89, no. 22 (November 27, 2006): 221907. http://dx.doi.org/10.1063/1.2397537.

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21

Chung, Gwiy-Sang. "Characteristics of tantalum nitride thin film strain gauges for harsh environments." Sensors and Actuators A: Physical 135, no. 2 (April 2007): 355–59. http://dx.doi.org/10.1016/j.sna.2006.07.025.

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22

Ren, Shuai, Shuwen Jiang, Hao Liu, Wanli Zhang, and Yanrong Li. "Investigation of strain gauges based on interdigitated Ba0.5Sr0.5TiO3 thin film capacitors." Sensors and Actuators A: Physical 236 (December 2015): 159–63. http://dx.doi.org/10.1016/j.sna.2015.11.001.

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23

Ma, Lei, Shreyes N. Melkote, John B. Morehouse, James B. Castle, James W. Fonda, and Melissa A. Johnson. "Design of thin-film polyvinylidene fluoride sensor rosettes for isolation of various strain components." Journal of Intelligent Material Systems and Structures 23, no. 10 (May 6, 2012): 1119–30. http://dx.doi.org/10.1177/1045389x12443597.

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Thin-film polyvinylidene fluoride piezoelectric sensors have long been recognized as a promising alternative to traditional metal foil strain gauges in applications where only dynamic or quasistatic signals are of interest. Compared to metal foil strain gauges, polyvinylidene fluoride sensors feature high sensitivity, high dynamic range, and broad frequency bandwidth. However, transverse sensitivity of the polyvinylidene fluoride sensor is higher than that of a metal foil strain gauge, making it more difficult to isolate a particular strain component or a deformation mode when the host structure is under complex loading. In addition, polyvinylidene fluoride films are sensitive to changes in ambient temperature due to the pyroelectric effect. In this article, three temperature-compensated polyvinylidene fluoride sensor rosette designs are proposed for isolating specific strain component(s) and deformation mode(s) of interest. First-principles based models are derived to relate the polyvinylidene fluoride sensor rosette output to the actual elastic strain component of interest. Experimental validation is conducted to verify the proposed models and to compare the performance of the polyvinylidene fluoride sensor rosettes with their metal foil strain gauge counterparts.

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24

Pan, Xiaochuan, Fan Lin, Chao Wu, Yingjun Zeng, Guochun Chen, Qinnan Chen, Daoheng Sun, and Zhenyin Hai. "Additive-Manufactured Platinum Thin-Film Strain Gauges for Structural Microstrain Testing at Elevated Temperatures." Micromachines 13, no. 9 (September 5, 2022): 1472. http://dx.doi.org/10.3390/mi13091472.

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This paper investigates the feasibility and performance of the fabrication of platinum high-temperature thin-film strain sensors on nickel-based alloy substrates by additive manufacturing. The insulating layer was made of a dielectric paste by screen printing process. A 1.8-micron-thick platinum film was deposited directly on the insulating layer. The four-wire resistance measurement method was used to eliminate the contact resistance of the solder joints. Comprehensive morphological and electrical characterization of the platinum thin-film strain gauge was carried out, and good static and dynamic strain responses were obtained, which confirmed that the strain gauge was suitable for in situ strain monitoring of high-temperature complex components.

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25

Wang, Hai Bo, Hao Xiong, Li Ma, and Wei Cai. "Martensitic Transformation Behavior of Ni_54.75Mn_13.25Fe₇Ga₂₅ Ferromagnetic Shape Memory Thin Film." Key Engineering Materials 474-476 (April 2011): 408–12. http://dx.doi.org/10.4028/www.scientific.net/kem.474-476.408.

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The Ni54.75Mn13.25Fe7Ga25 (at.%) ferromagnetic shape memory thin film was deposited onto silicon substrates using radio-frequency magnetron sputtering. The martensitic transformation, crystallographic structure, microstructure and magnetic-field induced strain were investigated by means of Differential Scanning Calorimetry (DSC), X-ray diffraction (XRD), Transmission Electron Microscope (TEM) and metal strain gauges. The results show that the martensite transformation temperature Ms is 296.6 K, the film with typical self-accommodated morphology is orthorhombic structure at room temperature. The field-induced strain of 52 ppm is obtained in this shape memory thin film.

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26

Tellier, C. R. "Thin Metal Film Sensors." Active and Passive Electronic Components 12, no. 1 (1985): 9–32. http://dx.doi.org/10.1155/1985/17659.

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Анотація:

During the last decade some progress have been made in the field of sensors using thin film techniques. In particular thin metal film strain gauges and thin film temperature sensors based on the temperature dependent resistivity of metal are now commonly used. But changes in other transport parameters with various measurands are also useful for the design of metal film sensors. Difficulty arises in thin film techniques when structural defects are frozen in films.Intensive theoretical investigations are carried out to explain the effect of grain-boundary and external surface scatterings on transport parameters. Accordingly the main results are presented to specify the influence of film structure on the sensor performance. The grain-boundary effects are discussed according to applications of metal film sensors. Theoretical predictions are analyzed in terms of sensitivity, thermal stability and long term behavior. But other problems induced by the presence of grain boundaries or point defects are also discussed, in particular problems associated with bulk diffusion, electromigration induced failures or intrinsic stresses.

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27

Nayak, M. M., K. Rajanna, and S. Mohan. "Performance study of a pressure transducer with meandering-path thin film strain gauges." Thin Solid Films 193-194 (December 1990): 1023–29. http://dx.doi.org/10.1016/0040-6090(90)90258-f.

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28

Lynch, Christopher S. "Strain compensated thin film stress gauges for stress wave measurements in the presence of lateral strain." Review of Scientific Instruments 66, no. 12 (December 1995): 5582–89. http://dx.doi.org/10.1063/1.1146024.

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29

Karaus, A., and H. Paul. "Load cells with small nominal load based on strain gauges using thin-film techniques." Measurement 10, no. 3 (July 1992): 133–39. http://dx.doi.org/10.1016/0263-2241(92)90009-s.

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30

Karapepas, Christos, Daisy Nestler, Daniel Wett, and Guntram Wagner. "Annealing effects of high sensitive thin strain gauges consisting of nickel carbon nanocomposites." Journal of Reinforced Plastics and Composites 37, no. 22 (September 4, 2018): 1378–84. http://dx.doi.org/10.1177/0731684418796309.

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Hybrid laminates consisting of fiber-reinforced thermoplastic films and metallic thin sheets are successively replacing thermoset-based systems due to their obvious advantages of higher formability and the aptitude for mass production. In order to monitor the material under operating condition, hybrid laminates need to be equipped with smart sensor units. Therefore, the aim of the present work is to evaluate the temperature stability of the Ni-C thin film strain gauge sensors. The analyses of the deposited Ni-C films manufactured by means of a magnetron sputtering process were carried out by means of Raman spectroscopy and X-ray diffraction to investigate the phase development after a heat treatment at different temperatures and holding times. In addition, the four-terminal sensing was utilized to study the change of temperature coefficients of resistance after a single annealing treatment.

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31

Sousa, P. J., L. R. Silva, V. C. Pinto, L. M. Goncalves, and G. Minas. "A thin-film aluminum strain gauges array in a flexible gastrointestinal catheter for pressure measurements." Journal of Micromechanics and Microengineering 26, no. 8 (July 22, 2016): 084011. http://dx.doi.org/10.1088/0960-1317/26/8/084011.

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32

Gurin, Sergey, Ekaterina Pecherskaya, Maksim Novichkov, and Olga Safronova. "Multilayer thin-film resistive structures with temperature self-compensation for super-precision resistors and strain gauges." Journal of Physics: Conference Series 2373, no. 3 (December 1, 2022): 032028. http://dx.doi.org/10.1088/1742-6596/2373/3/032028.

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Abstract The paper presents the main structural and topological solutions, the technology of obtaining and stabilizing multilayer thin-film resistive and tensoresistive structures with temperature self-compensation, which allows achieving a TCR value of no more than ± 1 × 10−6 and an instability of resistance no more than ± (0.01 … 0.02) %.

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33

Siarkowski, A. L., B. S. Rodrigues, and N. I. Morimoto. "Fabrication of phosphorus doped polysilicon thin-film strain gauges using a 50 microns silicon substrate thickness." Journal of Physics: Conference Series 421 (March 25, 2013): 012010. http://dx.doi.org/10.1088/1742-6596/421/1/012010.

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34

Zeiser, R., T. Fellner, and J. Wilde. "Capacitive strain gauges on flexible polymer substrates for wireless, intelligent systems." Journal of Sensors and Sensor Systems 3, no. 1 (April 10, 2014): 77–86. http://dx.doi.org/10.5194/jsss-3-77-2014.

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Abstract. This paper presents a novel capacitive strain gauge with interdigital electrodes, which was processed on polyimide and LCP (liquid crystal polymer) foil substrates. The metallization is deposited and patterned using thin-film technology with structure sizes down to 15 μm. We determined linear strain sensitivities for our sensor configuration and identified the most influencing parameters on the output signal by means of an analytical approach. Finite-element method (FEM) simulations of the strain gauge indicated the complex interaction of mechanical strains within the sensitive structure and their effect on the capacitance. The influence of geometry and material parameters on the strain sensitivity was investigated and optimized. We implemented thin films on 50 μm thick standard polymer foils by means of a temporary bonding process of the foils on carrier wafers. The characterization of the strain sensors after fabrication revealed the gauge factor as well as the cross sensitivities on temperatures up to 100 °C and relative humidity up to 100%. The gauge factor of a sensor with an electrode width of 45 μm and a clearance of 15 μm was −1.38 at a capacitance of 48 pF. Furthermore, we achieved a substantial reduction of the cross sensitivity against humidity from 1435 to 55 ppm %−1 RH when LCP was used for the sensor substrate and the encapsulation instead of polyimide. The gauge factor of a sensor half-bridge consisting of two orthogonal capacitors was 2.3 and the cross sensitivity on temperature was reduced to 240 ppm K−1. Finally, a sensor system was presented that utilizes a special instrumentation Integrated Circuit (IC). For this system, performance data comprising cross sensitivities and power consumption are given.

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35

Azuma, Toyohiro, Eiji Niwa, Yu Xin Peng, Junji Kaneko, Yuki Shimizu, So Ito, and Wei Gao. "Cr-N Strain-Gauge-Type Precision Displacement Sensor for Measuring Positions of Micro Stage." Key Engineering Materials 523-524 (November 2012): 939–44. http://dx.doi.org/10.4028/www.scientific.net/kem.523-524.939.

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A strain-gauge-type precision displacement sensor, which is developed for a usage of micro-XY stage, is described in this paper. A thin-film strain-gauge element, which is made by Cr-N alloy, is directly fabricated on the base of the strain gauge. The direct fabrication and using the Cr-N element are expected to achieve higher sensitivity for displacement detection and better stability against the change of ambient temperature. In this study, several designs of the thin-film strain gauge, including both of two-gauge-type and four-gauge-type, are prepared to compare sensor performances such as sensitivity, stability and so on. The designed patterns of the strain-gauge element are directly fabricated on zirconia plates by using photolithography processes. The fabricated strain gauges are then evaluated as precision displacement sensors. At first, stability of the fabricated Cr-N strain-gauge-type displacement sensor was confirmed by comparing with the one made by a conventional strain gauge. Resolution of the fabricated Cr-N strain-gauge-type displacement sensors was then evaluated by comparing with a commercially-available laser displacement sensor, while giving sub-micrometer-order deformation to the strain-gauge-type displacement sensor. Details of the design, fabrication and evaluation results of the Cr-N strain-gauge-type displacement sensor are described.

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36

Fraga, M. A., H. Furlan, M. Massi, and I. C. Oliveira. "Effect of nitrogen doping on piezoresistive properties of a-Si x C y thin film strain gauges." Microsystem Technologies 16, no. 6 (February 7, 2010): 925–30. http://dx.doi.org/10.1007/s00542-010-1033-9.

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37

Ottermann, Rico, Tobias Steppeler, Folke Dencker, and Marc Christopher Wurz. "Degeneration Effects of Thin-Film Sensors after Critical Load Conditions of Machine Components." Machines 10, no. 10 (September 27, 2022): 870. http://dx.doi.org/10.3390/machines10100870.

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In the context of intelligent components in industrial applications in the automotive, energy or construction sector, sensor monitoring is crucial for security issues and to avoid long and costly downtimes. This article discusses component-inherent thin-film sensors for this purpose, which, in contrast to conventional sensor technology, can be applied inseparably onto the component’s surface via sputtering, so that a maximum of information about the component’s condition can be generated, especially regarding deformation. This article examines whether the sensors can continue to generate reliable measurement data even after critical component loads have been applied. This extends their field of use concerning plastic deformation behavior. Therefore, any change in sensor properties is necessary for ongoing elastic strain measurements. These novel fundamentals are established for thin-film constantan strain gauges and platinum temperature sensors on steel substrates. In general, a k-factor decrease and an increase in the temperature coefficient of resistance with increasing plastic deformation could be observed until a sensor failure above 0.5 % plastic deformation (constantan) occurred (1.3 % for platinum). Knowing these values makes it possible to continue measuring elastic strains after critical load conditions on a machine component in terms of plastic deformation. Additionally, a method of sensor-data fusion for the clear determination of plastic deformation and temperature change is presented.

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YAN, JIANWU, and JICHENG ZHOU. "STRAIN SENSITIVITY AND TEMPERATURE INFLUENCE OF NICHROME (80/20 wt.%) THIN FILM FABRICATED BY MAGNETRON SPUTTERING." International Journal of Modern Physics B 21, no. 21 (August 20, 2007): 3719–31. http://dx.doi.org/10.1142/s0217979207037636.

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The electromechanical properties of nichrome ( Ni – Cr 80/20 wt.%) used as a common material for application in thin film strain gauges have been studied. The surface topography and chemical composition of Ni – Cr thin films grown on the glass substrate by magnetron sputtering have been analyzed by atomic force microscope (AFM) and energy dispersive spectroscopy (EDS), respectively. The temperature coefficient of resistance (TCR) has been determined by a Nano-volt/Micro ohm meter. The gauge factor (FG) has been determined by the cantilever method. Low stable TCR values (22 ppm to 46 ppm in the 50–150°C temperature range) have been obtained. Resistance stability is achieved by rapid thermal annealing (RTA) at 300°C for 10 min combined with a 24 h thermal annealing (TA) at 150°C. The desired 45 Ω/m sheet resistance and a gauge factor of 2.6 have been attained for 40-nm-thickness films. The films have very small roughness of 2.1~4.4 nm.

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39

He, Gonghan, Yingping He, Lida Xu, Lanlan Li, Lingyun Wang, Zhenyin Hai, and Daoheng Sun. "La(Ca)CrO3-Filled SiCN Precursor Thin Film Temperature Sensor Capable to Measure up to 1100 °C High Temperature." Micromachines 14, no. 9 (August 31, 2023): 1719. http://dx.doi.org/10.3390/mi14091719.

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Thin-film sensors are regarded as advanced technologies for in situ condition monitoring of components operating in harsh environments, such as aerospace engines. Nevertheless, these sensors encounter challenges due to the high-temperature oxidation of materials and intricate manufacturing processes. This paper presents a simple method to fabricate high temperature-resistant oxidized SiCN precursor and La(Ca)CrO3 composite thin film temperature sensors by screen printing and air annealing. The developed sensor demonstrates a broad temperature response ranging from 200 °C to 1100 °C with negative temperature coefficients (NTC). It exhibits exceptional resistance to high-temperature oxidation and maintains performance stability. Notably, the sensor’s resistance changes by 3% after exposure to an 1100 °C air environment for 1 h. This oxidation resistance improvement surpasses the currently reported SiCN precursor thin-film sensors. Additionally, the sensor’s temperature coefficient of resistance (TCR) can reach up to −7900 ppm/°C at 200 °C. This strategy is expected to be used for other high-temperature thin-film sensors such as strain gauges, heat flux sensors, and thermocouples. There is great potential for applications in high-temperature field monitoring.

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40

Math, Souvik, V. Jayaram, and S. K. Biswas. "Deformation and failure of a film/substrate system subjected to spherical indentation: Part I. Experimental validation of stresses and strains derived using Hankel transform technique in an elastic film/substrate system." Journal of Materials Research 21, no. 3 (March 1, 2006): 774–82. http://dx.doi.org/10.1557/jmr.2006.0094.

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Our concern here is to rationalize experimental observations of failure modes brought about by indentation of hard thin ceramic films deposited on metallic substrates. By undertaking this exercise, we would like to evolve an analytical framework that can be used for designs of coatings. In Part I of the paper we develop an algorithm and test it for a model system. Using this analytical framework we address the issue of failure of columnar TiN films in Part II [J. Mater. Res.21, 783 (2006)] of the paper. In this part, we used a previously derived Hankel transform procedure to derive stress and strain in a birefringent polymer film glued to a strong substrate and subjected to spherical indentation. We measure surface radial strains using strain gauges and bulk film stresses using photo elastic technique (stress freezing). For a boundary condition based on Hertzian traction with no film interface constraint and assuming the substrate constraint to be a function of the imposed strain, the theory describes the stress distributions well. The variation in peak stresses also demonstrates the usefulness of depositing even a soft film to protect an underlying substrate.

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41

Volokhov, I. V., S. A. Gurin, and I. R. Vergazov. "Study of the Properties of High-Sensitivity Thermally-Stable Thin-Film Resistance Strain Gauges for Integral Pressure Sensors." Measurement Techniques 59, no. 1 (April 2016): 80–86. http://dx.doi.org/10.1007/s11018-016-0921-5.

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42

Guevara De Jesus, Michael, Zhuyun Xiao, Maite Goiriena-Goikoetxea, Rajesh V. Chopdekar, Mohanchandra K. Panduranga, Paymon Shirazi, Adrian Acosta, et al. "Magnetic state switching in FeGa microstructures." Smart Materials and Structures 31, no. 3 (January 25, 2022): 035005. http://dx.doi.org/10.1088/1361-665x/ac46db.

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Abstract This work demonstrates that magnetoelectric composite heterostructures can be designed at the length scale of 10 µms that can be switched from a magnetized state to a vortex state, effectively switching the magnetization off, using electric field induced strain. This was accomplished using thin film magnetoelectric heterostructures of Fe81.4Ga18.6 on a single crystal (011) [Pb(Mg1/3Nb2/3)O3]0.68-[PbTiO3]0.32 (PMN-32PT) ferroelectric substrate. The heterostructures were tripped from a multi-domain magnetized state to a flux closure vortex state using voltage induced strain in a piezoelectric substrate. FeGa heterostructures were deposited on a Si-substrate for superconducting quantum interference device magnetometry characterization of the magnetic properties. The magnetoelectric coupling of a FeGa continuous film on PMN-32PT was characterized using a magneto optical Kerr effect magnetometer with bi-axial strain gauges, and magnetic multi-domain heterostructures were imaged using x-ray magnetic circular dichroism—photoemission electron microscopy during the transition to the vortex state. The domain structures were modelled using MuMax3, a micromagnetics code, and compared with observations. The results provide considerable insight into designing magnetoelectric heterostructures that can be switched from an ‘on’ state to an ‘off’ state using electric field induced strain.

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43

Karapepas, Christos, Daisy Nestler, and Guntram Wagner. "Influence of Sputtering Temperature and Layer Thickness on the Electrical Performance of Thin Film Strain Sensors Consisting of Nickel-Carbon Composite." Key Engineering Materials 809 (June 2019): 413–18. http://dx.doi.org/10.4028/www.scientific.net/kem.809.413.

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Hybrid laminates consisting of fibre-reinforced thermoplastic films and metallic thin sheets are successively replacing thermoset based systems due to their obvious advantages of higher formability and aptitude for mass production. In order to monitor the material under operating conditions, hybrid laminates need to be equipped with smart sensor units. Artifact-free integration of commercial strain gauges into hybrid laminates is almost impossible. Therefore, a new thin film strain sensor based on a PVD sputtering process was developed.The aim of this work was to evaluate the influence of the layer thickness as well as the elevated temperature during the sputtering process on the electrical performance of Ni-C strain sensors. The Ni-C films with different layer thickness and different sputtering temperatures manufactured by means of a magnetron sputtering process were investigated for the sheet resistance and the change of temperature coefficients of resistance. In addition, Raman spectroscopy was utilized to investigate the phase development with regard to different sputtering temperatures. It can be seen that the gauge factor gets doubled while optimizing the layer thickness. When the sputtering temperature was increased, the graphitic phase formation was preferred and the impurities were reduced. These results are discussed in this paper and appropriate solution concepts are provided.

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44

Zeiser, Roderich, Suleman Ayub, Jochen Hempel, Michael Berndt, and Juergen Wilde. "Mechanical Stress Analyses of Packaged Pressure Sensors for Very High Temperatures." Journal of Microelectronics and Electronic Packaging 11, no. 1 (January 1, 2014): 30–35. http://dx.doi.org/10.4071/imaps.399.

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Methods for investigations of stresses specialized for devices operating up to 500°C are presented in this study. Resistive pressure sensors and test chips with microstrain (μ-strain) gauges are processed in thin film technology. The sensor structure was a Wheatstone bridge on a silicon membrane with platinum resistors. The μ-strain gauges were characterized with tensile tests in combination with optical strain measurements. A gauge factor of 3.6 was measured at room temperature. After characterization as bare dice, the chips were mounted with a borosilicate glass solder on two ceramic substrates, AlN and Si3N4. We generated a FE model of the sensor assemblies including temperature-dependent material properties. The distribution of mechanical strains and stresses in the sensor was analyzed. The chip warpage dependent on temperature up to 500°C was obtained from FE simulations and compared with high-precision 3D deformation measurements. Deformation results from digital image correlation (DIC) verified the utilized FE model. The correlation of experimental results for the chip warpage exhibited good agreement with the numerical results obtained from FEM. The chip deflection from the center to the edges in the out-of-plane direction on AlN was 4.5 μm; on Si3N4 a concave warpage of 3 μm at 25°C was found. Temperature-induced deformations of the sensor chip in the range of micrometers were recorded up to 500°C. The output signal of the pressure sensors is strongly affected by superimposed strains based on the sensor assembly. The bridge voltage increased by 40% after the glass solder process on AlN and by 34% for devices on Si3N4. The analysis of the μ-strain gauges showed compressive strains in the sensor membrane of −1.39% on average for assemblies on AlN and of −0.168% for glass soldered chips on Si3N4. The FEM simulations revealed an average in-plane stress in the sensor membrane of −45 MPa for chips on AlN and −20 MPa for Si3N4 substrates. The compressive strains in the membrane obtained by FEM were verified by the μ-strain gauge measurements. A higher strain and stress gradient in the membrane of devices on AlN was found with FEM, which is consistent with the higher signal offset of assembled pressure sensors that was measured in this study.

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45

Zeiser, Roderich, Suleman Ayub, Jochen Hempel, Michael Berndt, and Juergen Wilde. "Mechanical Stress Analyses of Packaged Pressure Sensors for Very High Temperatures." International Symposium on Microelectronics 2013, no. 1 (January 1, 2013): 000723–28. http://dx.doi.org/10.4071/isom-2013-wp45.

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Анотація:

Methods for investigations of stresses specialized for devices operating up to 500 °C are presented in this study. Resistive pressure sensors and test-chips with micro strain gauges are processed in thin film technology. The sensor structure was a wheatstone-bridge on a silicon membrane with platinum resistors. The μ-strain gauges were characterized with tensile tests in combination with optical strain measurements. A gauge factor of 3.6 was measured at room temperature. After characterization as bare dies, the chips were mounted with a borosilicate glass-solder on two ceramic substrates, AlN and Si3N4. We generated a FE-model of the sensor assemblies including temperature dependent materials properties. The distribution of mechanical strains and stresses in the sensor was analyzed. The chip warpage dependent on temperature up to 500 °C was obtained from FE-simulations and compared to high precision 3D-deformation measurements. Deformation results from digital image correlation (DIC) verified the utilized FE-model. The correlation of experimental results for the chip warpage exhibited a good agreement with the numerical results obtained from FEM. The chip deflection from center to the edges in out-of-plane direction on AlN was 4.5 μm; on Si3N4 a concave warpage of 3 μm at 25 °C was found. Temperature induced deformations of the sensor chip in the range of micrometers were recorded up to 500 °C. The output signal of the pressure sensors is strongly affected by superimposed strains due to the sensor assembly. The bridge voltage increased by 40 % after the glass solder process on AlN and by 34 % for devices on Si3N4. The analysis of the μ-strain gauges showed a compressive strain in the sensor membrane of −1.39 % for assemblies on AlN and of −0.168 % for glass soldered chips on Si3N4. The FEM simulations revealed an average in-plane stress in the sensor membrane of −45 MPa for chips on AlN and – 20 MPa for Si3N4 substrates. A higher strain and stress gradient in the membrane of devices on AlN was found with FEM, which is assumed to lead to the higher offset drift of the sensor signal after the assembly.

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46

Liu, Hao, Xiling Mao, Jinting Cui, Shuwen Jiang, and Wanli Zhang. "Influence of a heterolayered Al2O3–ZrO2/Al2O3 ceramic protective overcoat on the high temperature performance of PdCr thin film strain gauges." Ceramics International 45, no. 13 (September 2019): 16489–95. http://dx.doi.org/10.1016/j.ceramint.2019.05.182.

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47

Schmid, P., F. Triendl, C. Zarfl, S. Schwarz, W. Artner, M. Schneider, and U. Schmid. "Influence of the AlN/Pt-ratio on the electro-mechanical properties of multilayered AlN/Pt thin film strain gauges at high temperatures." Sensors and Actuators A: Physical 302 (February 2020): 111805. http://dx.doi.org/10.1016/j.sna.2019.111805.

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48

"Nanocomposite Thin Film Strain Gauges for Use in Harsh Environments." ECS Meeting Abstracts, 2011. http://dx.doi.org/10.1149/ma2011-02/45/2558.

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49

Wu, Chao, Fan Lin, Xiaochuan Pan, Yingjun Zeng, Guochun Chen, Yanzhang Fu, Yingping He, Qinnan Chen, Daoheng Sun, and Zhenyin Hai. "Graphene/SiCN Thin-film Strain Gauges Fabricated by Direct Writing." IEEE Sensors Journal, 2022, 1. http://dx.doi.org/10.1109/jsen.2022.3222205.

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50

Wu, Chao, Fan Lin, Xiaochuan Pan, Yingjun Zeng, Yanzhang Fu, Guochun Chen, Yingping He, Qinnan Chen, Daoheng Sun, and Zhenyin Hai. "AgPd Thin-film Strain Gauges Fabricated by Direct Writing for High-temperature Application." IEEE Sensors Journal, 2022, 1. http://dx.doi.org/10.1109/jsen.2022.3216369.

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