Дисертації з теми "Thin Film Solver"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся з топ-37 дисертацій для дослідження на тему "Thin Film Solver".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Переглядайте дисертації для різних дисциплін та оформлюйте правильно вашу бібліографію.
Modi, Arvind. "Direct Immersion Annealing of Block Copolymer Thin Films." University of Akron / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=akron1471542724.
Повний текст джерелаUlianova, V. O., A. T. Orlov, and O. V. Bogdan. "Formation of ZnO Nanostructured Thin Film by Hydrothermal Method." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35191.
Повний текст джерелаReichman, Aaron Michael. "Development of nano-characterization system for polymer film measurement and single BGA solder joint forming experiment." Diss., Online access via UMI:, 2007.
Знайти повний текст джерелаSamoei, Victor K. "Fabrication and Characterization of Thin film Pressure Sensors using Novel Materials." University of Toledo / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1596762165322848.
Повний текст джерелаHedong, Zhang, Yasunaga Mitsuya, Yosuke Fujikawa, Akira Fuwa, and Kenji Fukuzawa. "Solvent Effects on Friction Properties of Monolayer Perfluoropolyether Films Coated on Magnetic Disk Surfaces." IEEE, 2009. http://hdl.handle.net/2237/13956.
Повний текст джерелаPowers, Gerald W. "The effect of temperature on the solvent removal from solution-cast thin polymer films." Ohio : Ohio University, 1988. http://www.ohiolink.edu/etd/view.cgi?ohiou1182868409.
Повний текст джерелаHuq, Abul Fatha Md Anisul. "Interfacial and Solvent Processing Control of Phenyl-C61-Butyric Acid Methyl Ester (PCBM) Incorporated Polymer Thin Films." University of Akron / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=akron1427746818.
Повний текст джерелаKumar, Manish. "High density and high reliability thin film embedded capacitors on organic and silicon substrates." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26655.
Повний текст джерелаCommittee Chair: Tummala Rao; Committee Member: Pulugurtha Raj; Committee Member: Wong C P. Part of the SMARTech Electronic Thesis and Dissertation Collection.
Hadi, Aseel. "Laser processing of TiO2 films on ITO-glass for dye-sensitized solar cells." Thesis, University of Manchester, 2018. https://www.research.manchester.ac.uk/portal/en/theses/laser-processing-of-tio2-films-on-itoglass-for-dyesensitized-solar-cells(a2793525-9cf1-4d54-bf7d-a84aabf3ec64).html.
Повний текст джерелаKevin, Punarja. "On the synthesis, measurement and applications of solar energy materials and devices." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/on-the-synthesis-measurement-and-applications-of-solar-energy-materials-and-devices(9273d60d-cc5a-4992-8fae-ac9ddefa506b).html.
Повний текст джерелаBhoje, Gowd E., Tadanori Koga, Maya K. Endoh, Kamlesh Kumarc, and Manfred Stamm. "Pathways of cylindrical orientations in PS-b-P4VP diblock copolymer thin films upon solvent vapor annealing." Royal Society of Chemistry, 2014. https://tud.qucosa.de/id/qucosa%3A36403.
Повний текст джерелаLee, Jiho. "Impact of process parameter modification on poly(3-hexylthiophene) film morphology and charge transport." Thesis, Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/50409.
Повний текст джерелаWang, Huan, and Huan Wang. "Flow Field Penetration in Thin Nanoporous Polymer Films under Laminar Flow by Förster Resonance Energy Transfer Coupled with Total Internal Reflectance Fluorescence Microscopy." Diss., The University of Arizona, 2015. http://hdl.handle.net/10150/565916.
Повний текст джерелаBile, Jessica. "Microencapsulation d’agent antimicrobien pour le développement de conditionnements primaires fonctionnalisés." Thesis, Lyon 1, 2015. http://www.theses.fr/2015LYO10182/document.
Повний текст джерелаFirst, this work focused on the formulation of microparticles loaded with antimicrobial agent using the emulsion/solvent evaporation method. Several morphologies have been obtained with nonsmooth microparticles characterized by scars and defects, roughness and holes. The parameters and the physico-chemical mechanisms involved in these morphological deteriorations have been identified and discussed. It has been shown that the formulation and processing parameters as the polymer mass and molar mass, the surfactant as well as the speed and shear rate of the propeller play a key role in the final microparticles surface states. This study proved that there is a competition between solvent evaporation and the coalescence of emulsion droplets which is responsible for the morphological degradations. Following this study, the resulting microspheres loaded with phenylethyl alcohol were dispersed in a binder and coated as thin films of various thicknesses by the dip-coating method at the polyolefin surface. It has been measured that the use of microparticles slows the antimicrobial agent diffusion by increasing the number of polymeric matrices that have to be crossed in order to reach the external medium. Such thin films resulted in an antimicrobial agent delivery up to 3 months which is 15 times higher than the delivery obtained for the non-encapsulated antimicrobial agent. The antimicrobial activity of the phenylethyl alcohol in an emulsion has also been investigated. The phenylethyl alcohol partition between the water phase, the oil phase and the micellar phase of an emulsion has been measured. These results led to the development of a mathematical model calculating the fraction of free antimicrobial agent present in the aqueous phase. It has been correlated with emulsion dosages and microbiological measurements using the five microorganisms of the challenge test during 14 days. It has been demonstrated that calculations enable the prediction of the antimicrobial agent concentration needed to ensure the antimicrobial protection. In particular, this work proved that the phenylethyl alcohol quantity necessary for antimicrobial protection is respectively 1.6 and 4.3 times higher for a micellar solution and an emulsion compared to an aqueous solution
Dubois, Vincent. "Electrodes positives lithiées d’oxysulfures de titane pour microbatteries Li-ion." Thesis, Bordeaux 1, 2013. http://www.theses.fr/2013BOR14858/document.
Повний текст джерелаLarge-scale development of microbatteries for various applications such as back-up power sources for cell phone electronic components needs suitability with reflowing process that is often used in microelectronic. Here we report on the development of a new realization process to produce lithiated titanium oxysulfides (LixTiOySz) thin films for use as positive electrode in Li-ion microbatteries. First of all, this work began with synthesis and characterization of several lithiated titanium sulfides compounds prepared by reaction between TiS2 or TiS3 with n-butyllithium but also by solid state reaction at high temperature between TiS2, Li2S and Ti. Then, LixTiOySz thin films were sputtered by magnetron effect radio-frequency sputtering from targets made of lithiated materials previously synthesized. The chemical composition of those films depends on the target one and allows obtaining thin films with different lithium and sulfur contents. In contrast, they are all amorphous, dense and they don’t have a morphological structuration. Finally, electrochemical characterizations of thin films, both in liquid and solid electrolyte, have highlighted a correlation between their chemical composition and their electrochemical behavior. Taken as a whole, LixTiOySz thin films are powerful, suitable with reflowing process and thus very interesting for the application
Ashraf, Kayesh. "Effect of charged species on the gradient properties." VCU Scholars Compass, 2017. http://scholarscompass.vcu.edu/etd/4844.
Повний текст джерелаCellier, Ze. "Une étude sur la fiabilité et le comportement thermomécanique de composant microélectronique type flip-chip." Thesis, Tours, 2013. http://www.theses.fr/2013TOUR4025/document.
Повний текст джерелаThis work is a part of an European fund project ‘3Dice’ which aims to improve the mechanical reliability of an innovated microelectronic product. The miniaturization of microelectronic component causes the difficulties to determine mechanical properties of materials involved. The development of experimental methods for microelectronic materials’ characterization is necessary. The flexibility of the products is an additional requirement recently in microelectronic field. The solder joint’s tolerance to the pre-load is interesting to investigate. The thesis is carried out based on these two topics. The characterization methods of thin film, resin with fillers and solder joint are developed. The fatigue behavior of solder joint is investigated under different displacement ratios
Chettaf, Aïssa. "Contribution à l'étude du séchage par rayonnement infrarouge : Application au séchage en couche mince d'une enduction." Valenciennes, 1994. https://ged.uphf.fr/nuxeo/site/esupversions/9a259158-201e-4807-bac7-56fdaf6a482b.
Повний текст джерелаNguyen, Thi Hoa. "Films minces de copolymères à blocs pour la réalisation de gabarits à porosité contrôlée." Phd thesis, Université d'Orléans, 2012. http://tel.archives-ouvertes.fr/tel-00821029.
Повний текст джерелаMontelmacher, Pascal. "Spectroscopie coherente en lumiere incoherente : problemes lies aux mesures de melange a quatre ondes." Paris 6, 1987. http://www.theses.fr/1987PA066537.
Повний текст джерелаAnanthan, M. "Multiscale Simulations in Multiphase Flows." Thesis, 2017. http://etd.iisc.ac.in/handle/2005/4287.
Повний текст джерела"Full-band Schrödinger Poisson Solver for DG UTB SOI MOSFET." Master's thesis, 2016. http://hdl.handle.net/2286/R.I.40796.
Повний текст джерелаDissertation/Thesis
Masters Thesis Electrical Engineering 2016
黃千睿. "Study of SolGel ZnO thin film transistor with oxidation treatment." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/18070682640020760932.
Повний текст джерелаChen, Chih-hao, and 陳志豪. "Interfacial reactions of eutectic SnZn solder on bulk and thin-film Cu substrates." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/43030205581132157311.
Повний текст джерела國立中興大學
化學工程學系所
95
SnPb olders have been used as the principal joining materials in electronic packaging due to many well-known advantages, like low cost, good wettability, and proper melting point. However, the usage of Pb in electronic products has a serious concern because the toxicity of Pb may cause detrimental effects on environment and human health. Therefore, searching for a proper candidate to replace SnPb solders is currently an urgent issue in electronic industry. Various Pb-free solders have been proposed, where eutectic SnZn alloy (Sn-9 wt% Zn) is one of the most potential candidates because of its lower cost and a melting point (198.5 ℃) that is closer to that of the conventional eutectic SnPb alloy (183 ℃). Interfacial reactions between solders and metallic substrates have been an important subject in electronic packaging, However, the Cu substrate is usually in the form of thin film in advanced electronic packaging, such as in the under-bump-metallization(UBM) of a flip-chip joint . The major difference between bulk and thin-film substrates is that the availability of the component that is involved in the interfacial reaction is limited for the thin-film substrate but is almost infinite for the bulk one. In this present study, two types of Cu substrates were used. Interfacial reactions between eutectic SnZn solder and bulk or thin-film Cu substrates are investigated and compared. The thicknesses of bulk and thin-film Cu substrates are 0.5 mm and 4000 Å、3 μm、6 μm、10 μm, respectively. Different dominant reaction products and interfacial microstructures are observed in these two types of interfacial reactions. In the bulk Cu、3 μm and 6 μm type, the Cu5Zn8 phase is the dominant reaction product under reflow and solid-state annealing. However, the CuZn5 phase becomes the dominant reaction product in the 4000 Å and 3 μm thin-film Cu type. The Cu5Zn8 phase in the bulk Cu type remains uniform microstructure after reflow. But after solid-state annealing, the Cu5Zn8 phase in the bulk Cu type fractures and the Cu6Sn5 and Cu3Sn phases are formed at the Cu5Zn8/Cu interface. The CuZn5 phase in the thin-film Cu type ripens after reflow and the phase morphology is transformed from uniform layer into separated scallops. In-situ observation of the interfacial microstructure after solid-state annealing reveals that prominent deformation occurs in the solder region close to the interface in the bulk Cu type.While in the 4000 Å thin-film Cu type, the CuZn5 grain is extruded out of the interface.
Yen, Hui-Ting, and 顏慧婷. "Preparation of Electroless Co-P Thin-film as the Diffusion Barrier of Pb-Sn Solder." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/82159016632260457186.
Повний текст джерела國立交通大學
材料科學與工程系所
93
Electroless plating technique was utilized to prepare the cobalt-phosphorous (Co-P) thin film to serve as the diffusion barrier layer of lead-tin (Pb-Sn) solder. Co-P/solder interfacial reactions were characterized in order to evaluate the feasibility of electroless Co-P layer as the under bump metallurgy (UBM) for flip-chip bonding. After depositing Ti/Cu layer on Si wafer, we immersed the samples in the electroless plating bath for 5 min to obtain the Co-P layer with thickness about 600 nm. The analyses using Auger electron spectroscopy (AES) and energy dispersive spectrometer (EDX) indicated that the phosphorous contents in Co-P films decreases with the increase of film thickness and the average contents are higher than 10 at.% for the specimens prepared in this work. X-ray diffraction (XRD) analysis revealed that the electroless Co-P layers are nanocrystalline granular structure. Cross-sectional scanning electron microscopy (SEM) was adopted to examine the interfacial reactions of electroless Co-P layer and Pb-Sn solder. For the samples annealed at 250�aC in N2 ambient, the thickness of intermetallic compounds (IMCs) at Co-P/solder interface increased with the time of thermal treatment. However, there was no distinct raise of thickness of IMCs after 6-hr annealing. The EDX line scan analysis revealed that during the interdiffusion of Sn, Cu, and Co, the Sn remains at the interface of Co-P layer after the Cu wetting layer was totally consumed. The fact that Sn and Cu underlayer could not penetrate Co-P layer after 250�aC, 24-hr annealing evidenced that the Co-P layer may serve as a good diffusion barrier of UBM structure for both Cu interconnect and solder bumping for Cu-ICs. The excellent diffusion retardation ability of Co-P should result from the amorphous nature provided by the high-phosphorous content in Co layer.
ZHENG, YOU-JUN, and 鄭友鈞. "A Study on the Diffusion Barrier Characteristics of Electroplating Co Thin Film to Solders." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/32970646894203404459.
Повний текст джерела國立中興大學
材料科學與工程學系所
104
The intermetallic compounds SnTe formed at interfaces between thermoelectric materials (n-type Bi2Te2.55Se0.45 and p-type Bi0.4Sb1.6Te3) and lead-free solders (Sn-Cu) after annealing at 200 oC. The SnTe formed influences the mechanical properties of the joint and the reliability of the thermoelectric materials. Although nickel is commonly used as a diffusion barrier in commercial thermoelectric modules, several studies have verified the Ni migrates to thermoelectric materials during cycles and causes a loss in efficacy during high temperature. In this research, the influence of cobalt thin film plating to p-type and n-type thermoelectric materials on the interface characterization and thermoelectric properties is studied using a electroplating. Solder was connected with cobalt by reflow at 250 oC after cobalt film plating to substrates to serve as the diffusion barrier, and interfacial reaction in the solder joints aged at 200 oC for varies times was systematically investigated. The CoSn3 compound formed at the interface of Sn-Cu/Co/Bi2Te2.55Se0.45 and Sn-Cu/Co/Bi0.4Sb1.6Te3. The results indicate that cobalt thin film could be a suitable diffusion barrier for Bi2Te2.55Se0.45, but not used for Bi0.4Sb1.6Te3. According to some literature and results that try plating Co-Se thin film to strengthen the barrier effect for applying to Bi0.4Sb1.6Te3.
Das, Mahua. "Thin Films Of A Carbonaceous Copper Oxide, Li Doped Cobalt Oxide And Li At Nanometric Dimension : Synthesis Through CVD, Solgel And Electromagnetic Irradiation And Characterisation." Thesis, 2007. https://etd.iisc.ac.in/handle/2005/619.
Повний текст джерелаDas, Mahua. "Thin Films Of A Carbonaceous Copper Oxide, Li Doped Cobalt Oxide And Li At Nanometric Dimension : Synthesis Through CVD, Solgel And Electromagnetic Irradiation And Characterisation." Thesis, 2007. http://hdl.handle.net/2005/619.
Повний текст джерелаWen-MingChen and 陳文明. "Study of Molten Lead-free Solder Deposited by Inkjet Printing for Bonding of Thin-film Solar Cell Modules." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/45848479773543162118.
Повний текст джерела國立成功大學
材料科學及工程學系碩博士班
101
The photovoltaic industry is fast growing and the fabrication of solar cells has been kept improving. Nowadays, the main type of solar cell development is thin-film solar cells. However, most of studies focus on the solar cell structure to enhance the photovoltaic conversion efficiency rather than improving the solar module packaging process. For module packaging process, the bus wire bonding and the encapsulation of solar cells are needed in the fabrication of thin-film solar cell. In order to keep stable photovoltaic conversion efficiency after module packaging, good bonding strength is required between copper ribbon and aluminum back electrode of thin-film solar cell. Inkjet printing technology is a non-contact direct fabrication process, which can control precise droplet size and position and reduce material consumption. This study used lead-free solder as bonding material by inkjet printing process and module packaging technology for getting better quality of solar cell modules. In this study, Sn3.0Ag0.5Cu solders were successfully printed by using inkjet printing technology for bonding of thin-film solar cell modules. The results show that the peel strength of lead-free solder is better than that of silver paste when the dot spacing of lead-free droplets is lower than 200 μm. In other words, the amount of lead-free solder is over than 50 μg/mm2. As the bonding strength increases, the efficiency loss decreases. The optimum results of low efficiency loss degrade 1.5 % and good photovoltaic conversion efficiency is over 8.3 %.
Shu, jia-ming, and 許家銘. "Wetting Study of Lead-free Solder,In-Sn and SnAgCu Alloy,on the bulk Ni and thin film Ni." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/31763561023981370218.
Повний текст джерела國立中央大學
化學工程與材料工程研究所
90
Due to the concern of human health and the environment issue, Japan and European Union has set a schedule to ban the usage of lead-bear- -ed solders. According to the Ministry of Trade and Industry(MITI) regulations, all electronic productions containing lead-beared solders can not sale in Japan after year of 2002. It has been the trend to use lead-free solders in microelectronics and semiconductor industries. Unfortunately, no lead-free solder that can be fully replace lead-beared solders. So, it is an urgent issue to study suitable lead-free solders in current electronic Industries. Some board level’s package, BGA and SMT, have been successfully on the lead-free solder. But some important and key package technologies , such as C4(Controlled Collapse Chip Connection) and metal heat spreader interconnected with the solder, can not be solved at the moment. CTE(Coefficient Thermal Expansion) mismatch between Si chip and metal generates the huge thermal stress. So, solder gluing heat spreader and Si wafer is easily to crack after temperature cycling. Present lead-free solders can not endure the huge thermal stress. So it is important to find a lead-free solder that is compliant and can endure the huge thermal stress. Having high ductility and well mechanicial property, In-Sn alloys have potential to be used to joint Si chip and metal heat spreader. To cause the fatigue fracture in solder joint, intermetallic compound plays very important role. If intermetallic compound is too thickness, int- -erface between the solder and the under bump metallization(UBM) is volunable. Cu is traditional UBM. However, lead-free solders are often Sn--rich alloys, those Sn-rich alloys react easily and rapidly to form Sn-Cu intermetallic compound. After Cu UBM is consumed by soldering reaction, spalling will occur at the interface between the solder and the UBM.Comparing to Cu, Ni reacts slower with Sn-rich alloys. So, here, we select Ni as UBM substrate. To understand reaction mechanism between In-Sn alloy and bulk-Ni,we designed a experiment to study In-Sn alloy on bulk-Ni, such as wetting angle and intermetallic compound formation. The experimental conditions are: 1.the reflowing time are 10 min&1 min、2.the reflowing temperature are isothermal 250℃ and 20℃ above melting point of alloys. There are four differential experiment. We can study the wetting reaction between SnIn/Ni 、SnAgCu/Ni systems. Experimental result will have big contribution on lead-free solder or reactive wetting studies.
Ming-Hui, Chu, and 朱明慧. "Electromigration study in SnCu solder joints with Ti/Ni(V)/Cu thin-film under-bump-metallization and Cu substrate pad." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/92906745573277833040.
Повний текст джерела國立交通大學
材料科學與工程系所
96
In this study, electromigration study in SnCu lead-free solder joints with thin-film under-bump-metallization and Cu substrate pad was conducted. We found that there was sever damage on the substrate side (anode side), and the damage on chip side (cathode side) was little. The damage on substrate side included void formation, dissolution of copper, and intermetallic compound formation. The voids almost separated Cu pad from the solder. We used microstructure analysis and 3-dimension simulation to investigate the electromigration mechanism in the area between Cu pad and solder. The higher diffusion rate of Cu in the SnCu solder was responsible for the serious void formation in the interface between Cu pad and the solder layers. Therefore, the surface becomes the weakest region during electromigration.
Pan, Hung-Chun, and 潘虹君. "A Study on the Diffusion Barrier Characteristics of Electroless Co(W,P) Thin Films to Solders." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/98072123073746853862.
Повний текст джерела國立交通大學
材料科學與工程學系
100
Diffusion barrier characteristics of electroless amorphous and polycrystalline Co(W,P) (termed a-Co(W,P) and poly-Co(W,P) hereafter) to eutectic PbSn, SnBi and SnAgCu (SAC) solders are investigated in this study. The samples were treated by liquid- and solid-state aging tests and the alloy reactions and diffusion barrier capabilities were evaluated. For PbSn and SAC systems, the activation energy of intermetallic compound (IMC) growth (Ea), interfacial bonding strength and failure modes were also analyzed. In all solder/a-Co(W,P) samples subjected to liquid-state aging, spallation of IMC into solder, formation of a nano-crystalline P-rich layer at reacting interface, and the recrystallization of Co(W,P) containing Co2P precipitates were observed. The IMCs observed in PbSn and SnBi samples were mainly CoSn2 and CoSn3, whereas that in SAC sample were mixture of CoSn3 and (Co,Cu)Sn3. As to solders/a-Co(W,P) samples subjected to solid-state aging, IMCs resided on the P-rich layer without spallation. In the samples containing poly-Co(W,P), thick IMC neighboring to an amorphous W-rich layer was seen regardless of the solder and aging types. It was found that the amorphous W-rich layers could not inhibit subsequent alloy reactions. Hence, diffusion barrier capability should be correlated to the nature of chemical bonds, rather than the amorphism of microstructure. Moreover, a-Co(W,P) was a composite-type barrier, i.e., sacrificial- plus stuffed-type barrier, while poly-Co(W,P) is mainly a sacrificial-type barrier. Analytical results indicated that the P content in Co(W,P) is a crucial factor affecting the structural evolution at the solder/electroless Co(W,P) interface. The values of Ea’s for IMC growth in PbSn/a-Co(W,P) and PbSn/poly-Co(W,P) samples were separately equal to 338.6 and 167.5 kJ/mol, whereas the Ea’s of IMC growth were 110.7 and 81.8 kJ/mol for SAC/a-Co(W,P) and SAC/poly-Co(W,P) samples, respectively. Ball shear test revealed the ductile mode dominates the failure in PbSn/a-Co(W,P), PbSn/poly-Co(W,P) and SAC/poly-Co(W,P) samples in most aging conditions, whereas interfacial break dominates at short-time aged samples and pad lift dominates when aging time was long in SAC/a-Co(W,P) case. Analytical results indicated that the decrement of bonding strength due to pad lift failure was ascribed to the deterioration of adhesion due to high P content, loss of toughness due to the formation of Co2P precipitates and the thermal stress induced by the change of CTE due to the recrystallization in aged Co(W,P) layer although high P content might enhance barrier capability. The P content of electroless plating layer affects not only the alloy reactions at solder/Co(W,P) interface, but also the diffusion barrier characteristics and reliability of solder joints.
Chung, Chien-ping, and 鍾建平. "A Study of Electric Current Effect on the Reaction Between Liquid Tin-Lead Solders and Cu Thin Films." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/78593033252459912267.
Повний текст джерела國立清華大學
材料科學工程學系
93
Lead-tin solder has played an important role in microelectronic packaging for the past few decades. The current density and the operation temperature in the packaged devices rise substantially with the increase in device density and functionality for integrated circuits, which may result in severe reliability problems of solder joints. In this study, the soldering reaction between eutectic lead-tin solders and copper thin films and the evolution of solder microstructure and wetting precursors under electric current stressing were investigated. The patterned copper thin film samples were prepared by conventional photolithography techniques. The sample was placed on a preheated hotplate with a solder ball sitting on the center of the Cu strip. The solder melted and reacted with the Cu metallization after applying an electric current through the Cu strip. The results showed that there was an asymmetric distribution of Pb precipitates in the anode side and the cathode side of the solder. It was found that Pb precipitates aggregated and formed in columnar shape at the anode side, and the length of the Pb columnar precipitates increased proportionally with both the current density applied and the reaction time. The direction of the Pb columnar precipitates appeared to depend on the direction of the current applied. Besides, the activation energy for the growth of Pb columnar precipitates was measured to be 165.1 KJ/mole. The effect of electric current on solder wetting behavior and solder precursor was also investigated. An asymmetric distribution of Pb precipitate and intermetallic compounds was observed in the precursor bands of both sides of the solder. It was also found that the width of the solder precursor band was mainly affected by the temperature and the flux applied on the samples during soldering reaction instead of the stressing electric current.
Chao, Wen-Hsiuan, and 趙文軒. "The Al/Mo/Pd and Al/Mo-N/Pd Thin Films were Investigated as the under Bump Metallurgy between Silicon and Solder." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/90336983823867542958.
Повний текст джерела國立成功大學
材料科學(工程)學系
84
In this research, the Al/Mo/Pd and Al/r-Mo2N/Pd films were investigated thin for the potential applications as the under bump metallurgy between silicon and solder.The Al/Mo/Pd and Al/r-Mo2N/Pd thin films were prepared on silicon by sputtering. The solder was coated onto the thin films using wave soldering . Various wave soldering parameters including solder temperature , conveyor speed , and preheat temperature were investigated for their effects on solder bump morphology. This work applied reflow to raise the height of solder bump .Furthermore, the effects of reflow with /without flux on bump height were also discussed. The experimental results revealed that the optimum conditions for wave soldering are at a solder temperature of 275℃ , conveyor speeds between 0.5 and 1 m/min,and preheat temperatures of above 70℃. The bump heights achieved prior to reflow is similar to those achieved with reflow in the presence of flux . The reflow of solder bumps with flux at higher concen -trations was able to raise bump height, but resulted in dewetting of the solder bump edge. During wave soldering, the intermetallic compounds PdSn4, PdSn3, PdSn2, Pb3Pd5,Pb9Pd13,and PbPd2 were formed between Pd deposit and molten solder. Heat treatment did not give rise to any compound other than those previou -sly described.Pd provides a good wetting layer as it tends to react with solder to intermetallic compound. Mo and r-Mo2N remained after the Si/Al/Mo/Pd and Si/Al/r-Mo2N/Pd films were heat treated at 150 ℃ for 1000 hours.A small amount of Al and Pd at -oms diffused into Mo and r-Mo2N deposits . Similar results exist for Si/ Al/Mo/Pd/Pb-Sn and Si/Al/-Mo2N/Pd/Pb-Sn combinations . Accordingly,Mo and r-Mo2N are capable of preventing the interdiffusion between Al and solder.
Toolan, D. T. W., A. Isakova, R. Hodgkinson, N. Reeves-McLaren, O. S. Hammond, K. J. Edler, W. H. Briscoe, et al. "Insights into the influence of solvent polarity on the crystallization of poly(ethylene oxide) spin-coated thin films via in situ grazing incidence wide angle x-ray scattering." 2016. http://hdl.handle.net/10454/8570.
Повний текст джерелаControlling polymer thin-film morphology and crystallinity is crucial for a wide range of applications, particularly in thin-film organic electronic devices. In this work, the crystallization behavior of a model polymer, poly(ethylene oxide) (PEO), during spincoating is studied. PEO films were spun-cast from solvents possessing different polarities (chloroform, THF and methanol) and probed via in situ grazing incidence wide angle x-ray scattering. The crystallization behavior was found to follow the solvent polarity order (where chloroform < THF < methanol) rather than the solubility order (where THF > chloroform > methanol). When spun-cast from non-polar chloroform, crystallization largely followed Avrami kinetics, resulting in the formation of morphologies comprising large spherulites. PEO solutions cast from more polar solvents (THF and methanol) do not form well-defined highly crystalline morphologies and are largely amorphous with the presence of small crystalline regions. The difference in morphological development of PEO spun-cast from polar solvents is attributed to clustering phenomena that inhibit polymer crystallization. This work highlights the importance of considering individual components of polymer solubility, rather than simple total solubility, when designing processing routes for the generation of morphologies with optimum crystallinities or morphologies.
Marques, Carolina Fidalgo. "Perovskite Photovoltaic Materials: towards a flexible and low cost solar cell technology." Master's thesis, 2017. http://hdl.handle.net/10362/23414.
Повний текст джерелаRoland, Sébastien. "Films minces supramoléculaires de copolymères de PS-P4VP réalisés par trempage." Thèse, 2012. http://hdl.handle.net/1866/9108.
Повний текст джерелаAlthough it is an important industrial process, block copolymer thin films obtained by dip-coating have been far less studied than those obtained by spin-coating. However, this technique allows precise control of film properties and morphologies without the need for subsequent annealing. Besides the process itself, the ability to modify the morphology of block copolymer thin films is of interest for their use in nanotechnology applications. Here, we investigated supramolecular thin films of poly(styrene-b-4-vinyl pyridine) (PS-P4VP) dip-coated from tetrahydrofuran (THF) solutions containing small molecules that hydrogen bond to P4VP. In the initial dip-coating conditions, films complexed with 1-naphthol (NOH) show a dot morphology (spheres), whereas those containing 1-naphthoic acid (NCOOH) show a stripe morphology (horizontal cylinders). It was discovered that the amount of small molecule in the film, measured by infrared spectroscopy, varies with dip-coating rate, but is the same for both small molecules at any given rate. A thermal study showed that a small fraction of the small molecule, more NOH than NCOOH due to the weaker H-bond of the former, is dispersed in the PS phase, thus rationalizing the difference in their morphology evolution with rate. Thus, the dip-coating rate is a key parameter for controlling both the average film thickness and, for supramolecular polymers, the film composition. We observed that the evolution of the thickness with rate can be modeled by two regimes, in accordance with a recent literature study on dip-coated sol-gel films. At low rates, the thickness first decreases (capillarity regime), reaches a minimum and, at higher rates, increases (draining regime), resulting in a V-shaped film thickness/dip-coating rate curve. In parallel, the amount of small molecule in the film increases with rate in the capillarity regime before reaching a plateau corresponding to the solution composition in the draining regime. Morphology changes, related to the film thickness and the small molecule content, are therefore observed by modifying the dip-coating rate. We further show that the dip-coating solvent also influences the composition and morphology of the film, by comparing the use of chloroform (CHCl3), which is a good solvent for both blocks, with THF, which is a non-solvent for P4VP. With CHCl3, the small molecule content remains constant with the dip-coating rate, although it is higher for NCOOH than for NOH. Furthermore, the morphology of NOH-containing PS-P4VP thin films shows stripes and flat-on lamellae, whereas those containing NCOOH show only flat-on lamellae. This is attributed to the difference in their small molecule content, possibly modulated by the reduction in solubility of the P4VP block in CHCl3 when complexed with the small molecule. Finally, dip-coated films were used as templates for the controlled adsorption of gold nanoparticles. Prior to adsorption, solvent annealing was applied to the films either to improve the long-range order of the P4VP dots or to change the film morphology, which is dependent on the solvent used (THF or chloroform). They were then exposed to a 15-nm gold nanoparticles solution, which allows the selective adsorption on the P4VP dots (or stripes). It was possible to adsorb one nanoparticle per P4VP dot by matching their diameters.