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Добірка наукової літератури з теми "Thickness gage"

Автор: Grafiati

Опубліковано: 30 травня 2022

Оновлено: 31 травня 2022

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Статті в журналах з теми "Thickness gage"

Bruver, V. I., and A. P. Budanov. "X-ray thickness gage." Metallurgist 33, no. 12 (December 1989): 242–43. http://dx.doi.org/10.1007/bf00750278.

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Dmitriev, Sergey, Vladimir Malikov, and Anatoly Sagalakov. "Subminiature eddy current transducers for thickness measurement." MATEC Web of Conferences 224 (2018): 03007. http://dx.doi.org/10.1051/matecconf/201822403007.

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A new gage system was made based on the eddy-current transducer. The system makes it possible to evaluate the possibility of using the eddy current method to measure the thickness of conductive and dielectric coatings applied on a conductive base material. One of the important advantages of the developed gage system is the possibility of local measurement of the thicknesses of conductive and non-conductive coatings. In this article, in particular, the measurement features are described in detail, as well as the specificity of the gage system. Also it represents data, showing the dependence of signal amplitude on objects of different thicknesses, and experiments proved the limiting dimensions, at which measuring data are useful.

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Malikov, Vladimir N., Nikolay D. Tihonskii, and Alexey V. Ishkov. "Thin Ni/Al Metal Films Characterization Using a High-Frequency Electromagnetic Field." Key Engineering Materials 910 (February 15, 2022): 893–901. http://dx.doi.org/10.4028/p-digld4.

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The paper presents methods of obtaining and studying new materials - thin metal films of the Ni/Al system. The technique and main parameters of the resistive method of thermal evaporation of the alloy using a vacuum universal station are briefly presented. Samples of thin films of various thicknesses were obtained. The thickness of the material was determined both using a scanning electron microscope and a developed eddy-current gage system operating under a hardware-software complex. In the course of the research, the limit the film thickness gauging capabilities of the developed gage system was established (400 nm). The ability of the gage system to detect differences in the thickness of the same film was shown using the developed method. Also, the possibility of determining the thickness of an undoubtedly unknown thin film by an eddy-current transducer signal amplitude has been demonstrated.

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Hager, J. M., S. Simmons, D. Smith, S. Onishi, L. W. Langley, and T. E. Diller. "Experimental Performance of a Heat Flux Microsensor." Journal of Engineering for Gas Turbines and Power 113, no. 2 (April 1, 1991): 246–50. http://dx.doi.org/10.1115/1.2906555.

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The performance characteristics of a heat flux microsensor have been measured and analyzed. This is a new heat flux gage system that is made using microfabrication techniques. The gages are small, have high frequency response, can measure very high heat flux, and output a voltage directly proportional to the heat flux. Each gage consists of a thin thermal resistance layer sandwiched between many thermocouple pairs forming a differential thermopile. Because the gage is made directly on the measurement surface and the total thickness is less than 2 μm, the presence of the gage contributes negligible flow and thermal disruption. The active surface area of the gage is 3 mm by 4 mm, with the leads attached outside this area to relay the surface heat flux and temperature signals. Gages were made and tested on glass and silicon substrates. The steady and unsteady response was measured experimentally and compared with analytical predictions. The analysis was performed using a one-dimensional, transient, finite-difference model of the six layers comprising the gage plus the substrate. Steady-state calibrations were done on a convection heat transfer apparatus and the transient response was measured to step changes of the imposed radiative flux. As an example of the potential capabilities, the time-resolved heat flux was measured at a stagnation point with imposed free-stream turbulence. A hot-film probe placed outside the boundary layer was used to provide a simultaneous signal showing the corresponding turbulent velocity fluctuations.

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Ludwick, S. J., H. E. Jenkins, and T. R. Kurfess. "Design and Implementation of a Tube Wall Thickness Measurement System." Journal of Manufacturing Science and Engineering 120, no. 2 (May 1, 1998): 471–75. http://dx.doi.org/10.1115/1.2830149.

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This paper describes the design and implementation of a gage for measuring the wall thickness of hot rolled steel tubing at an actual production facility. The design is based upon a statistical analysis of the tube samples, and upon the economic realities of mill operating conditions. Issues relating to time constraints, uneven sample preparation, a mill operating environment, and differences between gage operators are addressed. The gage records more data from the tubes than could be taken manually, and therefore allows the accompanying software to apply unique algorithms for the calculation of hexing and eccentricity in each sample. All results are recorded and stored in a database for continuous use in statistical process control.

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KIMURA, Kazuyoshi, Tsuyoshi NUNOKAWA, Motoi HONJYO, and Ryoichi TAKAHASHI. "Development of Gage Control System with Interstand Thickness Gage for Hot Strip Mill." Tetsu-to-Hagane 77, no. 4 (1991): 528–35. http://dx.doi.org/10.2355/tetsutohagane1955.77.4_528.

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Korotkevich, A. M., V. B. Nemtinov, and A. N. Subin. "Diffraction Laser-Electronic Fourier Thickness Gage for Monitoring the Thickness of a Large Diameter Lens." Measurement Techniques 48, no. 10 (October 2005): 978–85. http://dx.doi.org/10.1007/s11018-006-0007-x.

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Tomlinson, K., and D. G. Schroen. "Using an Interferometric Profiler and Gage Block to Determine Sample Thickness." Fusion Science and Technology 63, no. 2 (April 2013): 288–95. http://dx.doi.org/10.13182/fst13-a16352.

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Yashin, Vasiliy V., Evgenii V. Aryshenskii, Erkin D. Beglov, Maksim S. Tepterev, and Anna F. Grechnikova. "Development of a Mathematical Model of Plate Rolling on Hot Reversing Mills." Key Engineering Materials 746 (July 2017): 48–55. http://dx.doi.org/10.4028/www.scientific.net/kem.746.48.

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Анотація:

Objective of the work: develop a model for calculation of plate exit thickness. This model is supposed to improve process reliability in obtaining specified thickness with +/- 0.5 mm tolerance. The work identifies major influences on obtaining specified thickness and relationship of their effects. Based on derived relationships, the work develops rolling force calculation model with the following inputs: alloy grade, feedstock temperature, feedstock entry and exit gage, feedstock width, rotational speed of the rolls. Mill stand characteristics, like mill stiffness, backlash, work roll behavior, were studied in relation to force and temperature. The resulting model allows to predict the value of work roll gap increase during rolling. The model was validated in production environment and demonstrated high confidence level of calculation results.

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Wang, Jenn-Chyuan, Catey Bunce, and Hung-Ming Lee. "Intraoperative Corneal Thickness Measurement Using Optical Coherence Pachymetry and Corneo-Gage Plus Ultrasound Pachymetry." Journal of Refractive Surgery 24, no. 6 (June 1, 2008): 610–14. http://dx.doi.org/10.3928/1081597x-20080601-10.

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Дисертації з теми "Thickness gage"

Десятниченко, Алексей Владимирович. "Электромагнитно-акустический толщиномер для контроля металлоизделий с диэлектрическими покрытиями". Thesis, НТУ "ХПИ", 2015. http://repository.kpi.kharkov.ua/handle/KhPI-Press/17117.

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Диссертация на соискание ученой степени кандидата технических наук по специальности 05.11.13 – приборы и методы контроля и определения состава веществ. – Национальный технический университет "Харьковский политехнический институт", Харьков, 2015. Диссертация посвящена решению важной научно-практической задачи обеспечения ультразвукового контроля толщины металлоизделий электромагнитно-акустическим методом при наличии диэлектрических покрытий (зазоров) толщиной до 10 мм. В работе выполнен анализ существующих акустических методов и устройств для измерения толщины, которые широко используются в отечественной и зарубежной промышленности, рассмотрены основные их преимущества и недостатки. Методы разделяются по типу контакта датчика с объектом контроля на два основные класса: контактные и бесконтактные. Бесконтактные на сегодняшний день являются наиболее перспективными. К ним относятся методы, основанные на: воздушно акустической связи, термо- и оптико-акустическом эффектах, а также на эффектах электрического и электромагнитного полей. По результатам анализа недостатков приведенных методов, выделен наиболее перспективный – ЭМА метод. Рассмотрены вопросы выбора оптимального сигнала для возбуждения акустических колебаний ЭМА методом. Приведены расчеты принимаемой энергии для общего случая при зеркальной схеме контроля, когда передающий и приемный датчики не располагаются соосно по высоте изделия. Рассмотрены модели расчетов для зеркально теневой схемы контроля, отдельно для режимов излучения ЭМАП в виде длинных и коротких импульсов. Дан анализ целесообразности использования вариантов зондирующего сигнала с различными соотношениями длины импульсов и расстояний между ними. Рассмотрена электрическая модель выходного каскада усилителя зондирующего сигнала и датчика, описаны особенности ее работы. Приведены результаты экспериментальных исследований и разработок, направленных на повышение качества и производительности контроля толщины с использованием ЭМА метод возбуждения и приема акустических колебаний. Представлена конструкция макета ЭМА преобразователя для контроля металлоизделий при наличии зазора между датчиком и изделием. Рассмотрены вопросы построения передающего и приемного аналоговых трактов, приведены схемотехнические и конструктивные решения. Приведены результаты исследований зависимости амплитуды сигнала на генерирующей обмотке ЭМАП от напряжения питания усилителя. Проведены исследования зависимости уровня полезного сигнала он напряжения на передающей обмотке датчика. Исследовано влияния зазора на уровень полезного сигнала. Приведены результаты зависимости длительности «мертвой» зоны от зазора и способы ее снижения. Определены факторы, влияющие на точность контроля. Разработан толщиномер основанный на электромагнитно акустическом методе возбуждения и приема акустических волн, приведены результаты этой разработки. Рассмотрены особенности построения его составных частей. Рассмотрены алгоритмы цифровой обработки принятого сигнала. Проведена оценка метрологических характеристик разработанного прибора, изготовлен контрольный образец для метрологического обеспечения толщиномера. Приведено сравнение нового прибора с существующими аналогами.
Thesis for granting the Degree of Candidate of Technical sciences in speciality 05.11.13 – Devices and methods of testing and materials structure determination. – National technical university "Kharkiv Politechnical Institute", Kharkiv, 2015. Thesis is devoted to solution of important theoretical and practical task to ensure ultrasound control of the metal products thickness by using electromagnetic-acoustical method in cases of dielectric coatings (gaps) with thickness up to 10 mm. Work includes analysis of existing acoustic methods and devices for thickness measurement, their main advantages and disadvantages are reviewed. Based on the results of analysis of the given disadvantages, the most advanced ways was set off - electromagnetic-acoustical (EMA) method. The problems of selection of the optimal signal agitate sonorous vibrations by EMA method were reviewed. Calculations of the taken energy are given for the analysis of the practicability to use variants of probing signal. Electric model of amplifier output stage of probing signal and sensor is reviewed, peculiarities of its operation are described. Results of researches and developments dedicated to increase thickness measurement quality and efficiency are given. Matters to build of the transmitting and receiving analog tracts are reviewed. The signal level dependence on voltage research on sensor's transmitting winding are conducted. Impact of a gap on the signal level was examined. Results of the dependence of dead spot length on a gap and methods to its reduction are given. Factors affecting accuracy of control are determined. EMA thickness gauge was designed. The main factors of design are examined. The digital processing algorithm of the received data was reviewed. Metrological characteristics of the developed device were made.

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Десятніченко, Олексій Володимирович. "Електромагнітно-акустичний товщиномір для контролю металовиробів з діелектричними покриттями". Thesis, НТУ "ХПІ", 2015. http://repository.kpi.kharkov.ua/handle/KhPI-Press/17045.

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Анотація:

Дисертація на здобуття наукового ступеня кандидата технічних наук за спеціальністю 05.11.13 – прилади і методи контролю та визначення складу речовин. – Національний технічний університет "Харківський політехнічний інститут", Харків, 2015. Дисертація присвячена вирішенню важливої науково-практичної задачі, яка полягає у забезпеченні ультразвукового контролю товщини металовиробів електромагнітно-акустичним методом при наявності діелектричних покриттів (зазорів) товщиною до 10 мм. У роботі виконано аналіз існуючих акустичних методів і пристроїв для вимірювання товщини, розглянуті основні їх переваги та недоліки. За результатами аналізу недоліків наведених методів, виділений найбільш перспективний – ЕМА метод. Розглянуто питання вибору оптимального сигналу для збудження акустичних коливань ЕМА методом. Наведено розрахунки прийнятої енергії. Дано аналіз доцільності використання різних варіантів сигналу зондування. Розглянуто електричну модель вихідного каскаду підсилювача сигналу зондування і датчика, описано особливості її роботи. Наведено результати експериментальних досліджень і розробок спрямованих на підвищення якості та продуктивності контролю товщини. Представлена конструкція макета ЕМА перетворювача для контролю металовиробів при наявності зазору між датчиком і об'єктом. Розглянуто питання побудови передавального і приймального аналогових трактів, наведені конструктивні рішення. Досліджено залежність амплітуди сигналу на генеруючої обмотці ЕМАП від напруги живлення підсилювача. Проведено дослідження залежності рівня корисного сигналу він напруги на передавальній обмотці датчика. Досліджено впливу зазору на рівень корисного сигналу. Наведено результати залежності тривалості "мертвої" зони від зазору і способи її зниження. Визначено фактори, що впливають на точність контролю. Розроблено ЕМА товщиномір, розглянуті особливості побудови та питання схемотехніки його складових частин. Розглянуто алгоритми цифрової обробки прийнятого сигналу. Наведено опис виготовленого контрольного зразка для метрологічного забезпечення толщиномера.
Thesis for granting the Degree of Candidate of Technical sciences in speciality 05.11.13 – Devices and methods of testing and materials structure determination. – National technical university "Kharkiv Politechnical Institute", Kharkiv, 2015. Thesis is devoted to solution of important theoretical and practical task to ensure ultrasound control of the metal products thickness by using electromagnetic-acoustical method in cases of dielectric coatings (gaps) with thickness up to 10 mm. Work includes analysis of existing acoustic methods and devices for thickness measurement, their main advantages and disadvantages are reviewed. Based on the results of analysis of the given disadvantages, the most advanced ways was set off - electromagnetic-acoustical (EMA) method. The problems of selection of the optimal signal agitate sonorous vibrations by EMA method were reviewed. Calculations of the taken energy are given for the analysis of the practicability to use variants of probing signal. Electric model of amplifier output stage of probing signal and sensor is reviewed, peculiarities of its operation are described. Results of researches and developments dedicated to increase thickness measurement quality and efficiency are given. Matters to build of the transmitting and receiving analog tracts are reviewed. The signal level dependence on voltage research on sensor's transmitting winding are conducted. Impact of a gap on the signal level was examined. Results of the dependence of dead spot length on a gap and methods to its reduction are given. Factors affecting accuracy of control are determined. EMA thickness gauge was designed. The main factors of design are examined. The digital processing algorithm of the received data was reviewed. Metrological characteristics of the developed device were made.

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Bhuiya, Md Omar F. "DESIGN AND OPTIMIZATION OF A STRIPLINE RESONATOR SENSOR FOR MEASUREMENT OF RUBBER THICKNESS IN A MOVING WEB." University of Akron / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=akron1164650416.

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Berggren, Amanda. "Long-term results regarding healing andcomplications after 25-gauge pars planavitrectomy for large full-thickness macularholes." Thesis, Örebro universitet, Institutionen för medicinska vetenskaper, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:oru:diva-93339.

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Introduction A full-thickness macular hole (FTMH) is a round deformity in the fovea that involve alllayers of the neurosensory retina. The condition is usually symptomatic and is associatedwith a decreased visual acuity (VA). Large FTMHs are associated to a larger decrease in VA.To treat FTMH pars plana vitrectomy (PPV) is performed to repair the hole. There aredifferent dimensions of instruments in PPV but limited information on the outcome usingeach dimension. Aim This study aims to assess the healing rate of large FTMHs after 25-gauge vitrectomy. Methods The study is a retrospective record review. Patients were identified through the surgicalintervention registry at the Department of Ophthalmology, USÖ. The study included largeFTMHs (diameter > 400 μm) who underwent 25-gauge PPV at USÖ between 2015-2017. Results After 25-gauge PPV 19 (82.6%) out of 23 included eyes healed. No significant difference inhealing rate between subgroups of different sized FTMHs was discovered. Out of 4 eyes thatfailed to heal, 1 patient underwent a reoperation and the other 3 either chose not to or it wasdeemed not indicated. A statistically significant increase in mean VA postoperatively wasobserved. The most reported complications postoperatively were gas cataract and atemporary increase in intraocular pressure. In 7 cases the PPV led to an accelerateddevelopment of cataract and cataract surgery. Conclusion The majority of FTMHs healed after 25-gauge PPV and the mean VA increased after surgery.The most common complications were secondary cataract and temporary increase in IOP.

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Rennie, Michael. "Characterisation of molecular nitrogen implanted silicon for multiple thicknesses of gate oxide in a 0.5μm CMOS process". Thesis, University of Edinburgh, 1996. http://hdl.handle.net/1842/11294.

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The continuing scaling of CMOS devices for performance advantages has resulted in an accompanying thinning of the gate oxide insulator and an increase in the level of hot carrier effects for a fixed power supply voltage. Nitrogen incorporated into the gate oxide through the nitridation of silicon oxide from a gas source has been extensively studied to improve the robustness of devices to hot carrier effects. Although reduced growth rates have been observed with nitrided oxides, there has not been a comprehensive study of MOS device performance utilising this mechanism to selectively grow gate oxides with different thicknesses. One of the advantages is their potentially improved hot carrier robustness through the incorporation of nitrogen. The dry oxidation kinetics of silicon implanted with low dose (10¹⁴-10¹⁵ cm^-2) molecular nitrogen has been extensively studied in this work to establish the possibility of using the implanted nitrogen for adjusting the oxidation rate of silicon. This work established that the oxidation rate is determined by the pile-up of nitrogen at the silicon oxide-silicon interface in a surface reaction rate limited process. The nitrogen implanted silicon technique has been incorporated into a 0.5μm CMOS process to determine the feasibility of growing multiple thicknesses of gate oxide during a single oxidation step. In this work, the gate oxide is grown after direct implantation of molecular nitrogen into both NMOS and PMOS device areas. This allows for easy integration into an existing process as the implantation is carried out during the same step as threshold adjustment implants. The hot carrier reliability and boron penetration properties of gate oxides grown under high nitrogen dose conditions are improved in a similar way to nitridation from a gas source. Increased nitrogen dose in the silicon however, shows a deterioration of the MOS device mobility and gate oxide integrity. The localised thinning of the gate oxide is shown to be responsible and the inhomogeneous redistribution of nitrogen is attributed to the deterioration of the device characteristics. Sufficient device performance and reliability however can be achieved using low dose molecular nitrogen such that the simultaneous growth of 150Å and 90Å gate oxides can be realised on a CMOS technology microprocessor chip for 3.3V and 5V power supply interface applications.

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Civín, Adam. "Stanovení zbytkové napjatosti metodou vrtání otvoru s využitím MKP." Master's thesis, Vysoké učení technické v Brně. Fakulta strojního inženýrství, 2008. http://www.nusl.cz/ntk/nusl-228325.

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Residual state of stress in structural materials affect positively or negatively behaviour of component parts. The goal of this scope is not to deal with possible process of creating residual stresses neither about elimination of residual stress, but is focused how to determine magnitude of residual stress by hole-drilling method. We need to know magnitude and direction (angular orientation) of principal stresses to determine how residual state of stress affects behaviour of specimen. The most widely used modern technique for measuring residual stresses is hole-drilling strain-gage method. Hole-drilling method is in scope of this paper and is restricted only for measuring uniform residual stresses of steel specimens with finite dimensions. Structural, linear, elastic and isotropic material model is used with material properties =0,3 and E=2,1[10]^5 MPa. For correct application of this method we need to determine calibration coefficients “a“ and “b“ first. These coefficients are used to determine magnitude and direction of residual stresses in specific depth and diameter of drilled hole for materials with finite dimensions. Geometry and shape of model is simply represented by block with planar faces. Note that numerical determination of calibration coefficients is useful only for one type of strain gauge rosette RY 61 S. Main goals of this thesis are motivation and request to clearly report effectiveness, accuracy and applicability of calibration coefficients in relation to thickness of specimen, dimensions of drilled hole, condition of “through” or “blind” hole and number of drilled increments. High quality and accuracy of created numerical model is necessary too. Numerical simulation of residual stresses by MKP needs to be done to obtain requested results. All results are presented by 3D, 2D graphs and tables and compared with analytical results or results from other authors. Although is this publication focused on numerical modeling using FEM, hole-drilling method has many significant restrictions. The most substantial of them is influence of eccentricity of drilled hole, creation of stress concentration near drilled area and subsequent plastification, influence of geometrical inaccuracy of hole, etc. All these aspects have significant influence of determining calibration coefficients and can not be included into numerical simulation. These problems are closely discussed in background research. All obtained results should be helpful for practical use of calculated calibration coefficients to determine uniform residual stresses of specimens with various thickness and drilled hole. All these results are also applicable only for one type of strain gauge rosette, which is RY 61 S.

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Hénaux, Stéphane. "Contribution à l'amélioration des méthodes de caractérisation électrique des matériaux Silicium Sur Isolant (SOI)." Université Joseph Fourier (Grenoble), 1998. http://www.theses.fr/1998GRE10116.

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L'essor actuel des technologies soi est lie a la production d'un materiau de depart de qualite, dont le juge final est le comportement electrique des circuits integres. Cette these decrit des ameliorations et de nouvelles idees pour l'evaluation des proprietes electriques des materiaux soi. Les methodes presentees sont appliquees en priorite au nouveau materiau unibond. Nous donnons d'abord une vue d'ensemble des technologies soi et des methodes de caracterisation disponibles. Nous exposons ensuite notre contribution en commencant par la mesure electrique d'epaisseur du film de silicium dans un dispositif mos, pour laquelle nous proposons une extension d'une methode existante. La duree de vie des porteurs dans le film de silicium est ensuite etudiee par les techniques recentes des transitoires de courant de drain dans des transistors mos. Nous montrons la necessite d'une approche statistique pour comparer entre eux divers materiaux soi. Nous presentons ensuite des methodes de caracterisation rapide, ne necessitant pas la fabrication de dispositifs. L'oxyde enterre et le substrat silicium sous-jacent sont etudies par sonde a mercure, apres elimination du film de silicium par voie chimique. Pour la mesure du dopage residuel du film mince soi, nous evaluons les possibilites du pseudo-transistor mos. Nous proposons par ailleurs une nouvelle methode pour determiner tres rapidement et sans ambiguite le type, applicable aux tres faibles dopages. La derniere partie est consacree a l'oxyde de grille des technologies mos-soi. Une etude en time dependent dielectric breakdown sur dispositifs mos nous permet de montrer que le comportement en claquage intrinseque est identique sur soi et sur silicium massif. Pour s'affranchir du cout et de la longueur d'une telle etude, nous proposons une nouvelle methode simple de caracterisation d'oxyde de grille sur soi, ne necessitant pas d'autre etape technologique que la realisation de l'oxyde lui-meme.

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Fan, Kung Ming, and 范恭鳴. "Multiple-gate-oxide-thickness Process Development by NH3 Plasma Nitridation." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/61329243704455919302.

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碩士
長庚大學
半導體研究所
90
Abstract According to the ITRS prediction, the equivalent oxide thickness (EOT) will be scale to 0.9-1.4nm in the 90nm technology node. As the oxide thickness less than 3nm, the gate leakage current and boron penetration through oxide are more seriously. Replace the SiO2 by High-k dielectric materials and nitrogen implant in the silicon surface or dielectrics are the most popular approaches to overcome these two issues. SOC is the current trend for the future CMOS processes, but it increases the process complexity, one of these challenges is the multiple gate oxide thickness, which in order to have lower power consumption, high speed and circuit stability. Oxidation growth rate can be reduced by nitrogen implant in the silicon substrate and have being widely employed. In this thesis, nitrogen incorporated in the silicon surface by NH3 plasma. We discussed its oxidation growth rate and electrical characteristics of MOS capacitors. The oxidation growth rate can be reduced maximum about 80﹪compare to the control sample. Besides, we improved its oxide quality by NH3 plasma treatment compared to the direct rapid thermal (RT) N2O oxidation. We find that the low charge trapping, low bulk trap densities, higher immunity to SILC and higher charge to soft-breakdown by NH3 plasma treatment before RT N2O oxidation. In this experiment, gate voltage shift has a minimum value of 10 mV in constant current stress and negligible hysteresis effects of C-V characteristic, the flatband voltage shift is 8.5 mV. This process could achieve both multiple gate oxide thickness and improve oxide reliability.

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Yen, Yuh-Ren, and 顏育仁. "Study on Thickness Uniformity of Rapid Thermal Thin Gate Oxide." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/49874845421521239969.

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碩士
國立臺灣大學
電機工程學研究所
89
Two main topics are discussed in this thesis. One is about the electrical characteristics of MOS capacitor with non-uniform gate oxide and the other is the uniformity improvement of gate oxide prepared by Rapid Thermal Processor(RTP). In order to investigate the influence of non-uniform gate oxide on the electrical characteristics of MOS capacitors, we intentionally grow a non-uniform thickness oxide by putting a quartz ring beneath the monitored wafer. A thinner oxide is grown on the regions contacted with the quartz ring since heat is conducted by the contact quartz. The result oxide is a hill-shape structure. The Si beneath the thinner and thicker oxide of this structure was found to sense a tensile stress while a compressive stress exists on the Si beneath the moderate thickness oxide. We adopt this oxide structure as the gate oxides of our MOS capacitors. The measured I-V curves of these MOS capacitors show that there is a relation between the stress on Si and the reverse-saturation current. The MOS capacitor with a tensile stress on Si will have a lower revers-saturation current. This is quite important to the thin gate oxide reliability in ULSI. The reason why tensile stress leads to lower reverse-saturation current is also given in this thesis. With the ability to perform heat cycles on a wafer rapidly and with low thermal budget, RTP has become a key technology in the fabrication of advanced semiconductor devices. However, the most common criticisms of RTP are about the thermal non-uniformity, and this problem becomes earnest as oxide thickness shrinks for the need of ULSI devices. A great deal of effort has been put into improvement of radiant uniformity. For high thermal uniformity systems, however, heat convection does play an important role. From simulation result of flow filed, we see that the cold gas flow toward the wafer surface where exhibits a lower pressure due to the flow away of gas by the buoyancy at the wafer center. Our work is to suppress the upward gas flow by putting a quartz cap above the monitored wafer. Since this setting prevents the cold gas drawn form wafer edge to wafer center gas, we suppose that the temperature uniformity can be improved. This supposition is proven to be true from both simulation and experimental results. Furthermore, since natural convection tends to balance the temperature variation, the non-uniform temperature is self-compensated by the gas flowing in the gap between the wafer and the cap.

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Kun, Huang Tao, and 黃道坤. "The impact of poly gate sidewall oxide thickness on MOSFET’s gate-induced drain leakage behavior." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/12981841264445016012.

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碩士
長庚大學
電子工程研究所
93
The leakage in the drain region is a crucial issue for scaling of the MOSFET. The off-state gate-induced drain leakage (GIDL) current is one of the major contributors to the overall MOSFET leakage. GIDL is induced by band-to-band tunneling (BTBT) effect in the depletion region and generated in the gate to drain overlap region with high electric field. GIDL leakage is a function of many process parameters such as spacer material, spacer width, gate oxide thickness, doped concentration; anneal temperature, and poly re-oxidation conditions etc. Devices used in this work consist of a gate oxide of 4nm or 6nm, and a spacer width of 25nm. Three different poly re-oxidation conditions result in 3 gate sidewall oxide thicknesses of 4nm, 6nm, and 8nm, measured on the shallow trench isolation processed wafers in the experiments. The impact of different gate sidewall oxide thicknesses (4nm, 6nm and 8nm) on device threshold voltage (Vt), overlap capacitance (Cgd), and off-state GIDL leakage current was investigated. This study shows that the use of thin sidewall oxidation thickness further increases GIDL leakage current, getting high overlap capacitance, and decrease threshold voltage (Vt). Finally, a comparison of GIDL behavior in n-poly gate surface-channel NMOS and n-poly gate buried channel PMOS is summarized.

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Книги з теми "Thickness gage"

Yoshio, Ishida. All About Thickness. Ishi Pr, 1990.

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Частини книг з теми "Thickness gage"

Gooch, Jan W. "Film, Thickness Gauge." In Encyclopedic Dictionary of Polymers, 304. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-6247-8_4936.

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Szudarek, Maciej, Michał Nowicki, Filip Wierzbicki, and Marcin Safinowski. "Static Field Magnetic Flux Thickness Gauge." In Advances in Intelligent Systems and Computing, 650–56. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-13273-6_60.

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Hiruta, Y., H. Oyamatsu, H. S. Momose, H. Iwai, and K. Maeguchi. "Gate Oxide Thickness Dependence of Hot Carrier Induced Degradation on PMOSFETs." In ESSDERC ’89, 732–35. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_154.

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Jamwal, Deepika, Devi Dass, Rakesh Prasher, and Rakesh Vaid. "Impact of Scaling Gate Oxide Thickness on the Performance of Silicon Based Triple Gate Rectangular Nwfet." In Physics of Semiconductor Devices, 581–84. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_146.

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Takebe, Hidenori, Kenichi Mori, Kazuhiro Takahashi, and Kdeki Fujii. "Effects of Thickness and Grain Size on Tensile Properties of Pure Titanium Thin Gauge Sheets." In Proceedings of the 13th World Conference on Titanium, 491–94. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2016. http://dx.doi.org/10.1002/9781119296126.ch77.

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Srishti, Yamini Pandey, A. K. Baliga, and Brijesh Kumar. "Impact of Gate Thickness Variation and Dielectric on the Performance of Vertical Organic Thin Film Transistor." In Proceeding of International Conference on Intelligent Communication, Control and Devices, 1065–72. Singapore: Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-1708-7_126.

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Ghazali, Nor Azlin, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar, and Harold M. H. Chong. "Effect of Gate Dielectric Thickness on the Performance of Top-Down ZnO Nanowire Field-Effect Transistors." In Lecture Notes in Electrical Engineering, 690–96. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-8129-5_105.

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Gupta, Richa, Devi Dass, Rakesh Prasher, and Rakesh Vaid. "Impact of Silicon Body Thickness on the Performance of Gate-all-around Silicon Nanowire Field Effect Transistor." In Physics of Semiconductor Devices, 689–92. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_177.

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Jethwa, Mayank Kumar, Hardiki Mukesh Devre, Yash Agrawal, and Rutu Parekh. "A Comparative Study of MOSFET (Single and Double Gate), Silicon Nanowire FET, and CNTFET by Varying the Oxide Thickness." In Lecture Notes in Electrical Engineering, 205–16. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-0275-7_17.

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"Film, thickness gauge." In Encyclopedic Dictionary of Polymers, 405. New York, NY: Springer New York, 2007. http://dx.doi.org/10.1007/978-0-387-30160-0_4853.

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Тези доповідей конференцій з теми "Thickness gage"

Hager, J. M., S. Simmons, D. Smith, S. Onishi, L. W. Langley, and T. E. Diller. "Experimental Performance of a Heat Flux Microsensor." In ASME 1990 International Gas Turbine and Aeroengine Congress and Exposition. American Society of Mechanical Engineers, 1990. http://dx.doi.org/10.1115/90-gt-256.

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The performance characteristics of a heat flux microsensor have been measured and analyzed. This is a new heat flux gage system that is made using microfabrication techniques. The gages are small, have high frequency response, can measure very high heat flux, and output a voltage directly proportional to the heat flux. Each gage consists of a thin thermal resistance layer sandwiched between many thermocouple pairs forming a differential thermopile. Because the gage is made directly on the measurement surface and the total thickness is less than 2µm, the presence of the gage contributes negligible flow and thermal disruption. The active surface area of the gage is 3 mm by 4 mm, with the leads attached outside this area to relay the surface heat flux and temperature signals. Gages were made and tested on glass and silicon substrates. The steady and unsteady response was measured experimentally and compared with analytical predictions. The analysis was performed using a one-dimensional, transient, finite-difference model of the six layers comprising the gage plus the substrate. Steady-state calibrations were done on a convection heat transfer apparatus and the transient response was measured to step changes of the imposed radiative flux. As an example of the potential capabilities, the time-resolved heat flux was measured at a stagnation point with imposed freestream turbulence. A hot-film probe placed outside the boundary layer was used to provide a simultaneous signal showing the corresponding turbulent velocity fluctuations.

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White, Jeffrey S., Frederick P. LaPlant, John W. Dixon, Donaldson J. Emch, and Vince P. Datillo. "Non-Contact Real-Time Film Thickness Gage for Automotive Body Painting Applications." In International Body Engineering Conference & Exposition. 400 Commonwealth Drive, Warrendale, PA, United States: SAE International, 1998. http://dx.doi.org/10.4271/982313.

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Sengupta-Deo, Indrani, and Mukund V. Karwe. "Effect of Dimensions and Thermal Properties of Heat Flux Gage on Local Heat Flux." In ASME 1998 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1998. http://dx.doi.org/10.1115/imece1998-0781.

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Abstract Steady-state errors in the output in a thin foil-type heat flux gage have been calculated using conduction heat transfer analysis. These errors are a result of differences in the thermal properties and the geometry of the substrate and the gage. It was shown that the error in measuring steady state heat flux is affected by the ratio of the substrate to gage thickness ratio, substrate to gage thermal conductivity ratio, and the surface heat transfer coefficient. The amount of error varied between +40% to −20% for the cases considered. However, the errors were within 4% in most cases with a surface heat transfer coefficient was less than 10 W/m2K.

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Mukerji, Debjit, John K. Eaton, and Robert J. Moffat. "A New Correlation for Temperature Rise Correction of Heat Flux Gages." In ASME 1998 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1998. http://dx.doi.org/10.1115/imece1998-0785.

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Abstract Experimental and numerical studies of turbulent heat transfer near a step change in wall temperature have been conducted in connection with an error analysis of small, transient, heat flux gages. The surface temperature of such a gage typically rises above the temperature of the surrounding metal wall, which influences the heat flux to the gage. Data from such gages must be corrected for the effect of this temperature rise. The correction is typically made by superposition using an unheated starting-length correlation, a procedure that has been in practice for many years. In the present work, experimental data from a small, isothermal calorimeter were compared with output from STAN7, a 2-D turbulent boundary layer code, and with predictions based on a textbook correlation. The experiments and the numerical predictions agree within +/−6%, but the correlation underpredicts the required correction by 15–20% over the first half-boundary layer thickness downstream of the step change. As a consequence, data from small gages cannot be properly corrected using the accepted correlation. A new expression is proposed for Stanton number downstream of a step in wall temperature, which can be used as an accurate correction algorithm for use with small gages.

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Jonnalagadda, Krishna, and Ioannis Chasiotis. "Effect of Film Thickness on Fracture Toughness of Amorphous Diamond-Like Carbon." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-81631.

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Fracture toughness, KIC, measurements were conducted for the first time on hydrogen-free tetrahedral amorphous Diamond-like Carbon (ta-C) MEMS-scale specimens of different thicknesses. Uniform gage microscale specimens with mathematically sharp edge pre-cracks were prepared by microindentation on the SiO2 sacrificial layer. The radial-median crack from the indent propagated into the specimen generating a sharp pre-crack. The crack length was measured by an Atomic Force Microscope (AFM). Freestanding fracture specimens were then obtained by wet etching the SiO2 sacrificial layer. Microtensile tests were performed on the pre-cracked specimens under mode-I loading in fixed grip configuration. In order to investigate the specimen thickness dependence of KIC, fracture tests were conducted on specimens with thicknesses in the range of 0.5-3 μm. KIC was 4.25 ± 0.7 MPa m for 0.5 μm specimens, 4.4 ± 0.4 MPa m for 1 μm specimens, and 3.06 ± 0.17 MPa m for 3 μm thick specimens. The 25% lower fracture toughness of the 3 μm films points to a film thickness dependence of fracture toughness that was attributed to different through-the-thickness stresses in considerably thick ta-C films and compositional changes occurring during post-deposition processing.

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Koganti, Ramakrishna, Sergio Angotti, Ron Cooper, Dan Houston, Asif Waheed, and T. H. Topper. "Material Characterization of Uncoated Boron Steel for Automotive Body Structure Applications." In ASME 2008 International Manufacturing Science and Engineering Conference collocated with the 3rd JSME/ASME International Conference on Materials and Processing. ASMEDC, 2008. http://dx.doi.org/10.1115/msec_icmp2008-72193.

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Use of Advanced High Strength Steels in automotive applications is increasing. One of these materials is boron steel, which is commercially available in coated and uncoated sheets. Automotive manufacturers are using boron steel in body structure applications to produce light weight parts and to address safety requirements. Boron steel is available in a non heat-treated condition (also referred to as “green state”) which typically has a yield strength around 350 MPa. The yield strength for a fully temperature hardened boron steel increases to above 1000 MPa, depending on heat treatment temperature and quenching methods used. In this report, the static and fatigue properties of uncoated boron steel were evaluated. One objective was to understand whether these properties varied with respect to the material rolling direction (longitudinal, transverse and diagonal). For static strength analysis three different gages (1.0 mm, 1.5 mm and 2.0 mm) were evaluated. For fatigue evaluation, 3.0 mm thickness boron steel was evaluated. Based on the mechanical test data, ultimate tensile strength was not statistically significant in all three directions (longitudinal, transverse and diagonal) among three gages chosen. However, within the same gage, ultimate tensile strength is statistically significant in all three directions. 0.2% offset Yield strength and total elongation are uniform in all gages as well as in all three directions within each gage. However, uniform elongation (at max. load condition) was significant among the gages as well as within the same gages. A comparison of the monotonic and cyclic stress strain curves indicates boron steel is a strain-softening material.

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Nikhare, Chetan P. "Effect of Metal-Composite Layer Thickness on Springback After U-Bending." In ASME 2020 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/imece2020-23155.

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Abstract A sudden increase in the usage of automotive vehicles results in sudden increases in the fuel consumption which results in an increase in air pollution. To cope up with this challenge federal government is implying the stricter environmental regulation to decrease air pollution. To save from the environmental regulation penalty vehicle industry is researching innovation which would reduce vehicle weight and decrease the fuel consumption. Thus, the innovation related to light-weighting is not only an option anymore but became a mandatory necessity to decrease fuel consumption. To achieve this target, the industry has been looking at fabricating components from high strength to ultra-high strength steels or lightweight materials. With the usage of advanced high strength steels, the lightweight was achieved by reducing a gage thickness without compromising the strength aspect. However due to their high strength property often challenges occurred are higher machine tonnage requirement, sudden fracture, geometric defect, etc. The geometric defect comes from the elastic recovery of a material, which is also known as a springback. Springback is commonly known as a manufacturing defect due to the geometric error in the part, which would not be able to fit in the assembly without secondary operation or compensation in the forming process. It is learned that the springback of the material increases with an increase in the material strength and/or decrease in material thickness. In advanced high strength steels, higher strength and lower gage thickness options make the part prone to higher springback. Due to these many challenges, other research route involved is composite material, where light materials can be used with high strength material to reduce the overall vehicle weight. This generally includes, tailor welded blanks, multilayer material, mechanical joining of dissimilar material, etc. Due to substantial use of dissimilar materials, these parts are also called as hybrid components. It was noted that the part weight decreases with the use of hybrid components without compromising the integrity and safety. In the previously published paper in IMECE2017 the study was focused on equal layer thickness of metal and composite in bilayer material. In this paper, a springback analysis was performed considering bilayer metal by varying the thickness of the metal as well as the composite. For this two dissimilar materials aluminum and composite was considered as bonded material. This material was then bent on a free bend die. The bilayer springback was compared with different layer thickness of metal and composite and in different condition like aluminum layer on punch side and then on die side. These results were then compared with the baseline springback of only aluminum thin and thick layer.

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Sunami, Yuta, and Hiromu Hashimoto. "Optimization of Thin-Film Winding Conditions Considering Viscoelastic Property and Thickness Variation and its Experimental Verification." In ASME-JSME 2018 Joint International Conference on Information Storage and Processing Systems and Micromechatronics for Information and Precision Equipment. American Society of Mechanical Engineers, 2018. http://dx.doi.org/10.1115/isps-mipe2018-8563.

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Plastic films are produced using roll-to-roll systems, which allow the film to be wound into a roll and stored in a small space. Roll defects, however, can cause significant economic loss, and gage bands remain an open area of research. More recently, plastic films have become thinner, so we must now reconsider wrinkling and slippage, problems which depend on the in-roll stress condition. Therefore, predicting the stress condition is essential to preventing defects occurring in wound rolls. In addition, the in-roll stress will change over time as a result of viscoelastic properties. This study theoretically investigates and experimentally verifies winding condition optimization and in-roll stress in consideration of the viscoelastic property and web thickness profile at a constant rewinding tension. Results show that the predicted values are in agreement with the measured values.

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Peabody, Hume L., and Thomas E. Diller. "Evaluation of an Insert Heat Flux Gage in a Transonic Turbine Cascade." In ASME 1998 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 1998. http://dx.doi.org/10.1115/imece1998-0784.

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Abstract The effects of using an insert Heat Flux Microsensor (HFM) versus an HFM deposited directly on a turbine blade to measure heat flux in a transonic cascade are investigated. The HFM is a thin-film sensor, 6.35 mm (0.250 in.) in diameter (for an insert gage, including the housing) which measures heat flux and surface temperature. The effects of physical gage offset from the blade surface were measured with an insert HFM in the high acceleration region of the suction side of the blade. This region of high convex curvature and thin boundary layer on a 5 cm (0.197 in.) chord blade makes exact matching of the flat-faced insert sensor with the surface difficult. For comparison, an identical thin-film sensor was deposited directly onto an identical blade surface at the same location, providing a minimal surface disruption on the order of the surface roughness of the blade itself. The average heat transfer coefficients were compared for intentional offsets of ± 0.25 mm (0.01 in.) with the baseline cases. Turbulence grids were also used to study how the offset affects the heat transfer coefficient with freestream turbulence added to the flow. At the gage location the estimated laminar boundary layer thickness was 0.10 mm (0.004 in.). Both positive and negative offsets produced a higher average heat transfer coefficient than the zero offset case. Using an insert HFM reduced the effects of freestream turbulence and resulted in a substantially higher average heat transfer coefficient relative to the directly deposited gage, even for the zero offset case. Consequently, to accurately measure heat transfer coefficients and the effects of freestream turbulence for transonic turbine blades, the disruption of the flow caused by a gage must be minimized.

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Zhao, Libo, Yulong Zhao, and Zhuangde Jiang. "Design and Fabrication of a High Temperature Pressure Sensor." In 2007 First International Conference on Integration and Commercialization of Micro and Nanosystems. ASMEDC, 2007. http://dx.doi.org/10.1115/mnc2007-21517.

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Based on Silicon on Insulator (SOI) and Micro Electro Mechanical System (MEMS) technology, a single-crystal silicon piezoresistive strain gage was fabricated and constituted by silicon substrate, a thin SiO2 layer by Separation by Implantation of Oxygen (SIMOX), an optimized boron ion implantation doping layer photo lithographed to discrete piezoresistors, stress matching Si3N4 layer, and metallization scheme of Ti/Pt/Au as beam lead layer for connecting piezoresistors to be Wheatstone bridge configuration. A special buried SiO2 layer with the thickness of 367 nm was fabricated by the SIMOX technology, which replaced p-n junction to isolate the piezoresistors from the bulk silicon substrate, so this kind of single-crystal silicon strain gage can be used in many harsh fields under high temperature up to 350°C. By the single-crystal silicon strain gage packaged on the metallic circular flat diaphragm, and along with other thermal treatments and compensating methods, a high temperature pressure sensor has been developed with the pressure range of 0–120 MPa under high temperature above 200°C. The testing results show that the sensor has good static performances under 200°C and fine dynamic characteristics to meet the requirements of the modern industry, such as petroleum and chemistry, mobile industry, military industry, wind tunnels, materials processing.

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Звіти організацій з теми "Thickness gage"

Kim, J. S. The effect of the gate oxide thickness on the speed of MOS integrated circuits. Gaithersburg, MD: National Bureau of Standards, 1987. http://dx.doi.org/10.6028/nbs.ir.87-3668.

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Evans, James, James Tallent, Richard Brown, Anton Netchaev, and Clayton Thurmer. Determining miter gate plate corrosion and thickness of anti-corrosion coatings; and development of a Mobile Sensor Inspection Platform. Engineer Research and Development Center (U.S.), April 2019. http://dx.doi.org/10.21079/11681/32568.

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