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Статті в журналах з теми "Thermally assisted switching"
Strukov, Dmitri B., and R. Stanley Williams. "Intrinsic constrains on thermally-assisted memristive switching." Applied Physics A 102, no. 4 (January 26, 2011): 851–55. http://dx.doi.org/10.1007/s00339-011-6269-4.
Повний текст джерелаTaniguchi, Tomohiro, and Hiroshi Imamura. "Spin torque assisted magnetization switching in thermally activated region." Journal of the Korean Physical Society 62, no. 12 (June 2013): 1773–77. http://dx.doi.org/10.3938/jkps.62.1773.
Повний текст джерелаIskandarova, I. M., A. V. Ivanov, A. A. Knizhnik, A. F. Popkov, B. V. Potapkin, P. N. Skirdkov, K. A. Zvezdin, Q. Stainer, L. Lombard, and K. Mackay. "Simulation of switching maps for thermally assisted MRAM nanodevices." Nanotechnologies in Russia 11, no. 3-4 (March 2016): 208–14. http://dx.doi.org/10.1134/s1995078016020063.
Повний текст джерелаGuillemenet, Y., L. Torres, G. Sassatelli, and N. Bruchon. "On the Use of Magnetic RAMs in Field-Programmable Gate Arrays." International Journal of Reconfigurable Computing 2008 (2008): 1–9. http://dx.doi.org/10.1155/2008/723950.
Повний текст джерелаPrejbeanu, Ioan Lucian, Sebastien Bandiera, Ricardo Sousa, and Bernard Dieny. "MRAM Concepts for Sub-Nanosecond Switching and Ultimate Scalability." Advances in Science and Technology 95 (October 2014): 126–35. http://dx.doi.org/10.4028/www.scientific.net/ast.95.126.
Повний текст джерелаEl Baraji, M., V. Javerliac, W. Guo, G. Prenat, and B. Dieny. "Dynamic compact model of thermally assisted switching magnetic tunnel junctions." Journal of Applied Physics 106, no. 12 (December 15, 2009): 123906. http://dx.doi.org/10.1063/1.3259373.
Повний текст джерелаAkagi, F., T. Matsumoto, and K. Nakamura. "Effect of switching field gradient for thermally assisted magnetic recording." Journal of Applied Physics 101, no. 9 (May 2007): 09H501. http://dx.doi.org/10.1063/1.2710546.
Повний текст джерелаKhalili Amiri, P., P. Upadhyaya, J. G. Alzate, and K. L. Wang. "Electric-field-induced thermally assisted switching of monodomain magnetic bits." Journal of Applied Physics 113, no. 1 (January 7, 2013): 013912. http://dx.doi.org/10.1063/1.4773342.
Повний текст джерелаPrejbeanu, I. L., W. Kula, K. Ounadjela, R. C. Sousa, O. Redon, B. Dieny, and J. P. Nozieres. "Thermally Assisted Switching in Exchange-Biased Storage Layer Magnetic Tunnel Junctions." IEEE Transactions on Magnetics 40, no. 4 (July 2004): 2625–27. http://dx.doi.org/10.1109/tmag.2004.830395.
Повний текст джерелаAzevedo, Joao, Arnaud Virazel, Alberto Bosio, Luigi Dilillo, Patrick Girard, Aida Todri-Sanial, Jeremy Alvarez-Herault, and Ken Mackay. "A Complete Resistive-Open Defect Analysis for Thermally Assisted Switching MRAMs." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 22, no. 11 (November 2014): 2326–35. http://dx.doi.org/10.1109/tvlsi.2013.2294080.
Повний текст джерелаДисертації з теми "Thermally assisted switching"
Alvarez-Hérault, Jérémy. "Mémoire magnétique à écriture par courant polarisé en spin assistée thermiquement." Phd thesis, Grenoble, 2010. http://www.theses.fr/2010GRENY038.
Повний текст джерелаThis thesis deals with MRAMs, new non volatile memories using spintronics original properties. The goal of this work has mainly been to demonstrate that a new MRAM concept was possible to break through limitations due to previous generations (TA-MRAM and STT-RAM). Their respective advantages have been combinated, that is to say thermal stability for the TA-MRAM and writing without any magnetic field for the STT-RAM. A first demonstration of this new STT-TA-MRAM has been given at the beginning of this study, followed by improvements on the structure with significantly better electrical results. As a consequence, the spin transfer torque switching of the storage layer has been a key point of our investigation. Moreover, an innovative experimental setup has been tested to measure the real time magnetization reversal in order to understand better the writing physics. To finish, the tunnel barrier lifetime has been explored, showing that breakdown is slower than expected for short pulses
Chavent, Antoine. "Réduction du champ d'écriture de mémoires magnétiques à écriture assistée thermiquement à l'aide du couple de transfert de spin." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAT005/document.
Повний текст джерелаSpintronics offers new solutions in microelectronics regarding architecture, to solve scaling and consumption issues. Its main product, magnetic random access memories (MRAM), is composed of magnetic tunnel junctions (MTJ). Switching of the magnetic moment storing the data is facilitated by a thermally assisted writing method developed by Crocus Technology. The storage layer’s magnetization is coupled to an antiferromagnetic layer to stabilize it (pinned layer). Joule heating thanks to a tunneling current allows freeing the storage layer to write information thanks to a magnetic field. Generating a magnetic field still consumes power. To solve this issue, the idea explored in the thesis is to harness advantageously the spin transfer torque arising from the heating current in order to lower the writing field by changing the heating current polarity depending on the state to write. To do this, 1 kbit test vehicles have been tested, for which it is shown that spin transfer torque influence allows reducing the writing field. A new structure has been developed, consisting of a pinned synthetic ferrimagnetic (SyF) storage layer, to get benefits from the spin transfer torque without degrading epitaxial relations necessary to have a good stability and a good signal. To study the influence of spin transfer torque in details, field-voltage phase diagrams have been measured for various structures, by separating the elementary parts of the full structure. Apart from the expected spin transfer torque, an even effect of the current has been observed, favoring the antiparallel state whatever the current polarity. This effect can be found both in pinned layers and free layers, and can be explained thanks to perpendicular spin transfer torque as suggested by the shape of the diagrams obtained on free layers. Besides, writing diagrams of SyF storage layer have a complexe shape that may be related to the excitation of one only layer of the two of the SyF by spin transfer torque. By varying the resistance-area product (RA) of the MTJ, we showed that spin transfer torque seems to keep its proportionality to current density for structures with pinned storage layer. Another side of the work is related to the cooling phase at the end of the thermally assisted writing. Influence of the cooling rate on the efficiency of spin transfer torque was evidenced, and it is showed that a gradual decrease of the voltage let reach a quasistatic cooling regime in which the writing error rate is reduced by one order of magnitude on some structures. The different results are linked to the temperature dependence of RKKY coupling inside the SyF. This allows estimating real time change of temperature. Finally, thermoelectric effect due to heating asymmetry is studied
代, 兵., and Bing Dai. "Thermally assisted spin transfer torque switching of amorphous GdFeCo for magnetic random access memories." Thesis, 2013. http://hdl.handle.net/2237/18998.
Повний текст джерелаЧастини книг з теми "Thermally assisted switching"
Hassdenteufel, A., B. Hebler, C. Schubert, A. Liebig, M. Teich, J. Schmidt, M. Helm, M. Aeschlimann, M. Albrecht, and R. Bratschitsch. "Thermally Assisted All-Optical Helicity Dependent Switching of Ferrimagnetic Amorphous Fe100−x Tb x Thin Films." In Springer Proceedings in Physics, 238–40. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-07743-7_74.
Повний текст джерелаТези доповідей конференцій з теми "Thermally assisted switching"
Senni, Sophiane, Lionel Torres, Gilles Sassatelli, Anastasiia Bukto, and Bruno Mussard. "Power efficient Thermally Assisted Switching Magnetic memory based memory systems." In 2014 9th International Symposium on Reconfigurable and Communication-Centric Systems-on-Chip (ReCoSoC). IEEE, 2014. http://dx.doi.org/10.1109/recosoc.2014.6861357.
Повний текст джерелаGuillemenet, Yoann, Lionel Torres, Gilles Sassatelli, Nicolas Bruchon, and Ilham Hassoune. "A non-volatile run-time FPGA using thermally assisted switching MRAMS." In 2008 International Conference on Field Programmable Logic and Applications (FPL). IEEE, 2008. http://dx.doi.org/10.1109/fpl.2008.4629974.
Повний текст джерелаJung, Seungjae, Manzar Siddik, Wootae Lee, Jubong Park, Xinjun Liu, Jiyong Woo, Godeuni Choi, et al. "Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics." In 2011 IEEE International Electron Devices Meeting (IEDM). IEEE, 2011. http://dx.doi.org/10.1109/iedm.2011.6131483.
Повний текст джерелаIsowaki, Y., Y. Nozaki, and K. Matsuyama. "Thermally assisted switching of exchange coupled bi-layer with different ordering temperature." In INTERMAG Asia 2005: Digest of the IEEE International Magnetics Conference. IEEE, 2005. http://dx.doi.org/10.1109/intmag.2005.1463856.
Повний текст джерелаXiong, Shaomin, and David Bogy. "Investigation of the Local Temperature Increase From the Magnetization Decay for Heat Assisted Magnetic Recording." In ASME 2013 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/isps2013-2813.
Повний текст джерелаJewell, J. L., A. Scherer, S. L. McCall, A. C. Gossard, and J. H. English. "GaAs-AlAs Monolithic Microresonator Arrays." In Photonic Switching. Washington, D.C.: Optica Publishing Group, 1987. http://dx.doi.org/10.1364/phs.1987.pdp1.
Повний текст джерелаYang, Yizhang, W. Liu, S. Shojaeizadeh, S. Zhang, and M. Asheghi. "Thermal Property Measurements of Giant Magnetoresistive (GMR) Layers." In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-32782.
Повний текст джерелаLi, Dongbo, Shaomin Xiong, David Braunstein, Xingcai Guo, Sripathi Canchi, and Qing Dai. "A Method to Measure the Media Lubricant Loss After HAMR Recording." In ASME 2016 Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2016. http://dx.doi.org/10.1115/isps2016-9608.
Повний текст джерелаYamashita, S., H. Tomita, M. Shinji, N. Takayuki, T. Nagase, K. Nishiyama, E. Kitagawa, et al. "Spin Transfer Switching in Perpendicularly Magnetized GMR Nanopillars in both Dynamic and Thermally Assist Regimes." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.k-6-2.
Повний текст джерелаAtalay, Ozan, Murat Gultekin, and Sertac Cadirci. "Parametric Investigation on Thermal and Hydraulic Performance of Minichannel Heatsink." In ASME 2021 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2021. http://dx.doi.org/10.1115/imece2021-70472.
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