Статті в журналах з теми "Thermal transistor"
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Timoshenkov, V. P., A. I. Khlybov, D. V. Rodionov, and A. I. Panteleev. "Research of Influence of Power RF GaN Transistor Constructions on it's Thermal Mode." Nano- i Mikrosistemnaya Tehnika 22, no. 8 (October 23, 2020): 415–21. http://dx.doi.org/10.17587/nmst.22.415-421.
Повний текст джерелаAmar, Abdelhamid, Bouchaïb Radi, and Hami El Abdelkhalak. "Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)." Applied Sciences 11, no. 22 (November 13, 2021): 10720. http://dx.doi.org/10.3390/app112210720.
Повний текст джерелаOh, Se Young, Sun Kak Hwang, Young Do Kim, Jong Wook Park, and In Nam Kang. "Effects of Post Thermal Annealing on the Electrical Properties of Vertical Type Organic Thin Film Transistors Using Poly(3-hexylthiophene) and Its Application in Organic Light Emitting Transistor." Journal of Nanoscience and Nanotechnology 8, no. 9 (September 1, 2008): 4881–84. http://dx.doi.org/10.1166/jnn.2008.ic66.
Повний текст джерелаRoberts, J., T. MacElwee, and L. Yushyna. "The Thermal Integrity of Integrated GaN Power Modules." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (January 1, 2013): 000061–68. http://dx.doi.org/10.4071/hiten-mp12.
Повний текст джерелаПашковский, А. Б., И. В. Куликова, В. Г. Лапин, В. М. Лукашин, Н. К. Приступчик, Л. В. Манченко, В. Г. Калина, М. И. Лопин та А. Д. Закурдаев. "Поверхностный тепловой интерфейс для мощных арсенид-галлиевых гетероструктурных полевых транзисторов". Журнал технической физики 89, № 2 (2019): 252. http://dx.doi.org/10.21883/jtf.2019.02.47079.2493.
Повний текст джерелаNjawah Achiri, Humphrey Mokom, Vaclav Smidl, Zdenek Peroutka, and Lubos Streit. "Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements." Energies 13, no. 14 (July 21, 2020): 3749. http://dx.doi.org/10.3390/en13143749.
Повний текст джерелаRon Liu, D., K. Chen, and E. Jih. "Observation of Microstructural Evolution of Aluminum Bonding Wires in Power Electronic Package." Microscopy and Microanalysis 5, S2 (August 1999): 876–77. http://dx.doi.org/10.1017/s1431927600017700.
Повний текст джерелаVachhani, M. G., and P. N. Gajjar. "Influence of Chain Length of 1D Thermal Transistor on Thermal Amplification Factor." Advanced Materials Research 1141 (August 2016): 72–76. http://dx.doi.org/10.4028/www.scientific.net/amr.1141.72.
Повний текст джерелаHamana, Yoshiki, and Takahide Oya. "Improvement of Performance of Paper Transistor Using Carbon-Nanotube-Composite Paper and its Application to Logic Circuit." Advances in Science and Technology 95 (October 2014): 32–37. http://dx.doi.org/10.4028/www.scientific.net/ast.95.32.
Повний текст джерелаBunea, Gabriela E., S. T. Dunham, and T. D. Moustakas. "Modeling of a GaN Based Static Induction Transistor." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 697–702. http://dx.doi.org/10.1557/s1092578300003276.
Повний текст джерелаShafranjuk, S. E. "Graphene thermal flux transistor." Nanoscale 8, no. 46 (2016): 19314–25. http://dx.doi.org/10.1039/c6nr07246a.
Повний текст джерелаChen, Liang. "The Effect of Thermal Resistans on IC-VBE Fly-Back Characteristic of Power SiGe Heterojunction Bipolar Transistor." Applied Mechanics and Materials 701-702 (December 2014): 1177–80. http://dx.doi.org/10.4028/www.scientific.net/amm.701-702.1177.
Повний текст джерелаWANG, LEI, and BAOWEN LI. "HEAT SWITCH AND MODULATOR: A MODEL OF THERMAL TRANSISTOR." International Journal of Modern Physics B 21, no. 23n24 (September 30, 2007): 4017–20. http://dx.doi.org/10.1142/s0217979207045128.
Повний текст джерелаZhu, Miao, Xiaoyun Wei, Jupeng Cao, Wei Xie, Changwei Zou, Yanxiong Xiang, and Hong Meng. "High-k Boron Nitride Sheets/Polyimide Hybrid Dielectric Layers for the Fabrication of Flexible Organic Transistors on Commercial Graphite Paper." Nano 15, no. 11 (October 29, 2020): 2050145. http://dx.doi.org/10.1142/s1793292020501453.
Повний текст джерелаBhardwaj, Bishwajeet, Takeshi Sugiyama, Naoko Namba, Takayuki Umakoshi, Takafumi Uemura, Tsuyoshi Sekitani, and Prabhat Verma. "Raman Spectroscopic Studies of Dinaphthothienothiophene (DNTT)." Materials 12, no. 4 (February 18, 2019): 615. http://dx.doi.org/10.3390/ma12040615.
Повний текст джерелаLi, Baowen, Lei Wang, and Giulio Casati. "Negative differential thermal resistance and thermal transistor." Applied Physics Letters 88, no. 14 (April 3, 2006): 143501. http://dx.doi.org/10.1063/1.2191730.
Повний текст джерелаPop, Eric, and Kenneth E. Goodson. "Thermal Phenomena in Nanoscale Transistors." Journal of Electronic Packaging 128, no. 2 (June 1, 2006): 102–8. http://dx.doi.org/10.1115/1.2188950.
Повний текст джерелаKhlybov, A. I., D. V. Rodionov, A. I. Panteleev, P. V. Timoshenkov, and N. V. Guminov. "Simulation of Power RF GaN Transistors Thermal Parameters in Pulse Mode." Nano- i Mikrosistemnaya Tehnika 23, no. 4 (August 20, 2021): 179–85. http://dx.doi.org/10.17587/nmst.23.179-185.
Повний текст джерелаMaguire, Luke, Masud Behnia, and Graham Morrison. "Heat Spreading Enhancement in High Power Amplifier Heat Sinks – Comparison of Measurements with Numerical Predictions." Journal of Microelectronics and Electronic Packaging 1, no. 3 (July 1, 2004): 117–26. http://dx.doi.org/10.4071/1551-4897-1.3.117.
Повний текст джерелаLiu, Yu-Qiang, Deng-Hui Yu, and Chang-Shui Yu. "Common Environmental Effects on Quantum Thermal Transistor." Entropy 24, no. 1 (December 24, 2021): 32. http://dx.doi.org/10.3390/e24010032.
Повний текст джерелаHikita, Masahiro, Hiroaki Ueno, Hisayoshi Matsuo, Tetsuzo Ueda, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, and Daisuke Ueda. "Status of GaN-Based Power Switching Devices." Materials Science Forum 600-603 (September 2008): 1257–62. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1257.
Повний текст джерелаMao, Yu Dong, and Ming Tian Xu. "Thermal Transport in Hotspots Using the Lattice Boltzmann Method with Application to Silicon-on-Insulator Transistors." Advanced Materials Research 960-961 (June 2014): 337–40. http://dx.doi.org/10.4028/www.scientific.net/amr.960-961.337.
Повний текст джерелаVachhani, M. G., Tarika K. Patel, and P. N. Gajjar. "Thermal characteristics of a microscopic model of thermal transistor." International Journal of Thermal Sciences 108 (October 2016): 159–64. http://dx.doi.org/10.1016/j.ijthermalsci.2016.05.008.
Повний текст джерелаZainal Badri, Asmaa Nur Aqilah, Norlaili Mohd Noh, Shukri Bin Korakkottil Kunhi Mohd, Asrulnizam Abd Manaf, Arjuna Marzuki, Mohd Tafir Mustaffa, and Mohamed Fauzi Packeer Mohamed. "Development of Accurate BSIM4 Noise Parameters for CMOS 0.13-µm Transistors in Below 3-GHz LNA Application." Indonesian Journal of Electrical Engineering and Computer Science 10, no. 3 (June 1, 2018): 925. http://dx.doi.org/10.11591/ijeecs.v10.i3.pp925-933.
Повний текст джерелаWu, Jerry, Yin-Lin Shen, Kitt Reinhardt, Harold Szu, and Boqun Dong. "A Nanotechnology Enhancement to Moore's Law." Applied Computational Intelligence and Soft Computing 2013 (2013): 1–13. http://dx.doi.org/10.1155/2013/426962.
Повний текст джерелаSAMIAN, R. S., A. ABBASSI, and J. GHAZANFARIAN. "THERMAL INVESTIGATION OF COMMON 2D FETs AND NEW GENERATION OF 3D FETs USING BOLTZMANN TRANSPORT EQUATION IN NANOSCALE." International Journal of Modern Physics C 24, no. 09 (August 18, 2013): 1350064. http://dx.doi.org/10.1142/s0129183113500642.
Повний текст джерелаAlhmoud, Lina, та Ali Khudhair Al-Jiboory. "Insulated-gate bipolar transistor junction temperature estimation based on ℋ∞ robust controller in wind energy applications". Wind Engineering 44, № 5 (27 вересня 2019): 548–58. http://dx.doi.org/10.1177/0309524x19877645.
Повний текст джерелаGryglewski, Daniel, Wojciech Wojtasiak, Eliana Kamińska, and Anna Piotrowska. "Characterization of Self-Heating Process in GaN-Based HEMTs." Electronics 9, no. 8 (August 13, 2020): 1305. http://dx.doi.org/10.3390/electronics9081305.
Повний текст джерелаJoulain, Karl, Younès Ezzahri, and Jose Ordonez-Miranda. "Quantum Thermal Rectification to Design Thermal Diodes and Transistors." Zeitschrift für Naturforschung A 72, no. 2 (February 1, 2017): 163–70. http://dx.doi.org/10.1515/zna-2016-0350.
Повний текст джерелаd’Alessandro, Vincenzo, Antonio Pio Catalano, Ciro Scognamillo, Markus Müller, Michael Schröter, Peter J. Zampardi, and Lorenzo Codecasa. "Experimental Determination, Modeling, and Simulation of Nonlinear Thermal Effects in Bipolar Transistors under Static Conditions: A Critical Review and Update." Energies 15, no. 15 (July 28, 2022): 5457. http://dx.doi.org/10.3390/en15155457.
Повний текст джерелаShaheen, Saleh, Gady Golan, Moshe Azoulay, and Joseph Bernstein. "A comparative study of reliability for finfet." Facta universitatis - series: Electronics and Energetics 31, no. 3 (2018): 343–66. http://dx.doi.org/10.2298/fuee1803343s.
Повний текст джерелаFirek, Piotr, and Bartłomiej Stonio. "Influence of AlN etching process on MISFET structures." Microelectronics International 36, no. 3 (July 1, 2019): 109–13. http://dx.doi.org/10.1108/mi-12-2018-0081.
Повний текст джерелаUkita, Yasunari, Kazuki Tateyama, Masao Segawa, Yoshihiko Tojo, Hideyuki Gotoh, and Katsuhisa Oosako. "Lead Free Die Mount Adhesive Using Silver Nanoparticles Applied To Power Discrete Package." Journal of Microelectronics and Electronic Packaging 2, no. 3 (July 1, 2005): 217–22. http://dx.doi.org/10.4071/1551-4897-2.3.217.
Повний текст джерелаGórecki, Krzysztof. "Influence of the Semiconductor Devices Cooling Conditions on Characteristics of Selected DC–DC Converters." Energies 14, no. 6 (March 17, 2021): 1672. http://dx.doi.org/10.3390/en14061672.
Повний текст джерелаKanoh, Hiroshi, and Masakiyo Matsumura. "Thermal-CVD Amorphous-Silicon Thin-Film Transistor." IEEJ Transactions on Fundamentals and Materials 110, no. 10 (1990): 667–69. http://dx.doi.org/10.1541/ieejfms1990.110.10_667.
Повний текст джерелаKim, Sangrak. "Thermal transistor behavior of a harmonic chain." Journal of the Korean Physical Society 71, no. 5 (September 2017): 269–74. http://dx.doi.org/10.3938/jkps.71.269.
Повний текст джерелаProd'homme, Hugo, Jose Ordonez-Miranda, Younes Ezzahri, Jeremie Drevillon, and Karl Joulain. "Optimized thermal amplification in a radiative transistor." Journal of Applied Physics 119, no. 19 (May 21, 2016): 194502. http://dx.doi.org/10.1063/1.4950791.
Повний текст джерелаChung Lo, Wei, Lei Wang, and Baowen Li. "Thermal Transistor: Heat Flux Switching and Modulating." Journal of the Physical Society of Japan 77, no. 5 (May 15, 2008): 054402. http://dx.doi.org/10.1143/jpsj.77.054402.
Повний текст джерелаBehnia, S., and R. Panahinia. "Molecular thermal transistor: Dimension analysis and mechanism." Chemical Physics 505 (April 2018): 40–46. http://dx.doi.org/10.1016/j.chemphys.2018.02.018.
Повний текст джерелаKazalieva, E., and A. R. Shakhmaeva. "Improving the thermal properties of the device in the process of forming a contact with the collector region of a silicon transistor." Herald of Dagestan State Technical University. Technical Sciences 49, no. 3 (November 7, 2022): 6–13. http://dx.doi.org/10.21822/2073-6185-2022-49-3-6-13.
Повний текст джерелаMandarino, Antonio. "Quantum Thermal Amplifiers with Engineered Dissipation." Entropy 24, no. 8 (July 26, 2022): 1031. http://dx.doi.org/10.3390/e24081031.
Повний текст джерелаGórecki, Krzysztof, and Krzysztof Posobkiewicz. "Influence of a Cooling System on Power MOSFETs’ Thermal Parameters." Energies 15, no. 8 (April 15, 2022): 2923. http://dx.doi.org/10.3390/en15082923.
Повний текст джерелаMin, Jin-Gi, Dong-Hee Lee, Yeong-Ung Kim, and Won-Ju Cho. "Implementation of Ambipolar Polysilicon Thin-Film Transistors with Nickel Silicide Schottky Junctions by Low-Thermal-Budget Microwave Annealing." Nanomaterials 12, no. 4 (February 13, 2022): 628. http://dx.doi.org/10.3390/nano12040628.
Повний текст джерелаMądzik, Mateusz Tomasz, Elangovan Elamurugu, Raquel Flores, and Jaime Viegas. "Impact of glycerol on Zinc Oxide based thin film transistors with Indium Molybdenum Oxide electrodes." MRS Advances 1, no. 4 (2016): 265–68. http://dx.doi.org/10.1557/adv.2016.26.
Повний текст джерелаEl Boukili, Abderrazzak. "New physically based model for thermal induced initial stress in 3D for silicon germanium films after deposition." COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 33, no. 6 (October 28, 2014): 2121–38. http://dx.doi.org/10.1108/compel-11-2013-0390.
Повний текст джерелаVorona, Mikhail Y., Nathan J. Yutronkie, Owen A. Melville, Andrew J. Daszczynski, Jeffrey S. Ovens, Jaclyn L. Brusso, and Benoît H. Lessard. "Developing and Comparing 2,6-Anthracene Derivatives: Optical, Electrochemical, Thermal, and Their Use in Organic Thin Film Transistors." Materials 13, no. 8 (April 22, 2020): 1961. http://dx.doi.org/10.3390/ma13081961.
Повний текст джерелаGórecki, Krzysztof, and Paweł Górecki. "Modelling dynamic characteristics of the IGBT with thermal phenomena taken into account." Microelectronics International 34, no. 3 (August 7, 2017): 160–64. http://dx.doi.org/10.1108/mi-11-2016-0082.
Повний текст джерелаFLYNN, MICHAEL P., SUNGHYUN PARK, and CHUN C. LEE. "ACHIEVING ANALOG ACCURACY IN NANOMETER CMOS." International Journal of High Speed Electronics and Systems 15, no. 02 (June 2005): 255–75. http://dx.doi.org/10.1142/s0129156405003193.
Повний текст джерелаKalemai, Gion, Nikolaos Vagenas, Athina Giannopoulou, and Panagiotis Kounavis. "Band Bending and Trap Distribution along the Channel of Organic Field-Effect Transistors from Frequency-Resolved Scanning Photocurrent Microscopy." Electronics 11, no. 11 (June 6, 2022): 1799. http://dx.doi.org/10.3390/electronics11111799.
Повний текст джерелаKonishi, Nobutake, and Kenji Miyata. "Polycrystalline-Silicon Thin Film Transistor by Thermal Annealing." IEEJ Transactions on Fundamentals and Materials 110, no. 10 (1990): 670–74. http://dx.doi.org/10.1541/ieejfms1990.110.10_670.
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