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Статті в журналах з теми "Thermal transistor"
Timoshenkov, V. P., A. I. Khlybov, D. V. Rodionov, and A. I. Panteleev. "Research of Influence of Power RF GaN Transistor Constructions on it's Thermal Mode." Nano- i Mikrosistemnaya Tehnika 22, no. 8 (October 23, 2020): 415–21. http://dx.doi.org/10.17587/nmst.22.415-421.
Повний текст джерелаAmar, Abdelhamid, Bouchaïb Radi, and Hami El Abdelkhalak. "Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)." Applied Sciences 11, no. 22 (November 13, 2021): 10720. http://dx.doi.org/10.3390/app112210720.
Повний текст джерелаOh, Se Young, Sun Kak Hwang, Young Do Kim, Jong Wook Park, and In Nam Kang. "Effects of Post Thermal Annealing on the Electrical Properties of Vertical Type Organic Thin Film Transistors Using Poly(3-hexylthiophene) and Its Application in Organic Light Emitting Transistor." Journal of Nanoscience and Nanotechnology 8, no. 9 (September 1, 2008): 4881–84. http://dx.doi.org/10.1166/jnn.2008.ic66.
Повний текст джерелаRoberts, J., T. MacElwee, and L. Yushyna. "The Thermal Integrity of Integrated GaN Power Modules." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (January 1, 2013): 000061–68. http://dx.doi.org/10.4071/hiten-mp12.
Повний текст джерелаПашковский, А. Б., И. В. Куликова, В. Г. Лапин, В. М. Лукашин, Н. К. Приступчик, Л. В. Манченко, В. Г. Калина, М. И. Лопин та А. Д. Закурдаев. "Поверхностный тепловой интерфейс для мощных арсенид-галлиевых гетероструктурных полевых транзисторов". Журнал технической физики 89, № 2 (2019): 252. http://dx.doi.org/10.21883/jtf.2019.02.47079.2493.
Повний текст джерелаNjawah Achiri, Humphrey Mokom, Vaclav Smidl, Zdenek Peroutka, and Lubos Streit. "Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements." Energies 13, no. 14 (July 21, 2020): 3749. http://dx.doi.org/10.3390/en13143749.
Повний текст джерелаRon Liu, D., K. Chen, and E. Jih. "Observation of Microstructural Evolution of Aluminum Bonding Wires in Power Electronic Package." Microscopy and Microanalysis 5, S2 (August 1999): 876–77. http://dx.doi.org/10.1017/s1431927600017700.
Повний текст джерелаVachhani, M. G., and P. N. Gajjar. "Influence of Chain Length of 1D Thermal Transistor on Thermal Amplification Factor." Advanced Materials Research 1141 (August 2016): 72–76. http://dx.doi.org/10.4028/www.scientific.net/amr.1141.72.
Повний текст джерелаHamana, Yoshiki, and Takahide Oya. "Improvement of Performance of Paper Transistor Using Carbon-Nanotube-Composite Paper and its Application to Logic Circuit." Advances in Science and Technology 95 (October 2014): 32–37. http://dx.doi.org/10.4028/www.scientific.net/ast.95.32.
Повний текст джерелаBunea, Gabriela E., S. T. Dunham, and T. D. Moustakas. "Modeling of a GaN Based Static Induction Transistor." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 697–702. http://dx.doi.org/10.1557/s1092578300003276.
Повний текст джерелаДисертації з теми "Thermal transistor"
Liu, Wei. "Electro-thermal simulations and measurements of silicon carbide power transistors." Doctoral thesis, Stockholm, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-86.
Повний текст джерелаLim, Dan J. "Characterization of thermal dissipation within integrated gate bipolar transistor (IGBT) layered packaging structure." Thesis, University of Hull, 2008. http://hydra.hull.ac.uk/resources/hull:1681.
Повний текст джерелаBaylis, Charles Passant II. "Improved Current-Voltage Methods for RF Transistor Characterization." Scholar Commons, 2004. https://scholarcommons.usf.edu/etd/950.
Повний текст джерелаDhombres, Stéphanie. "Étude d'un protocole de régénération thermique de composants électroniques soumis à un rayonnement ionisant." Thesis, Montpellier, 2015. http://www.theses.fr/2015MONTS228.
Повний текст джерелаNowadays, cameras are more and more used in space missions or nuclear plant for observation (civil or military) and monitoring missions (checking the deployment of solar panels, extravehicular operations, nuclear accident, and area storage). The space environment, nuclear reactors or radioactive waste storage areas are radiative environments that can greatly disturb electronic components and systems. In these environments, ionizing radiation degrades the electrical parameters of electronic components. The total ionizing dose induces significant charge build-up in oxides, degrading the electrical properties of the materials of electronic devices. That can result in the loss of functionality of the entire electronic system.In this thesis, we propose a regeneration method to recover the electrical parameters degraded by total ionizing dose of electronic components subjected to ionizing radiation. In this method isothermal annealing cycles are applied to electronic devices. In a first step, this method is applied on MOS transistors, and a study is conducted on the impact of various key parameters of annealing (bias, annealing temperature, annealing time, dose step between each annealing). In a second step, we focus on components more integrated and newer such as CMOS APS image sensors. We experiment what is the impact of annealing on this type of component and finally, the regeneration method is modified to be suitable on these APS sensors to increase their lifetime
Uesugi, Y., T. Imai, K. Kawada, and S. Takamura. "Fundamental and Third Harmonic Operation of SIT Inverter and its Application to RF Thermal Plasma Generation." IEEE, 2002. http://hdl.handle.net/2237/7175.
Повний текст джерелаNajjari, Hamza. "Power Amplifier Design Based on Electro-Thermal Considerations." Thesis, Bordeaux, 2019. http://www.theses.fr/2019BORD0422.
Повний текст джерелаThe aim of this work is to design a power amplifier based on electrothermal considerations. It describes the Dynamic Error Vector Magnitude challenge and long packet issue when designing a power amplifier with hetero-junction bipolar transistors. Based on the circuit electrothermal behavior, an optimization method of both the static and dynamic linearity is proposed. A complete RF front-end (PA + coupler + switch + LNA) is designed for the latest WLAN standard: the Wi-Fi 6. The dynamic temperature distribution in the circuit is analyzed. It’s impact on the performances is quantified. Finally, a programmable temperature dependent bias is designed to compensate for performance degradation. The measurements show a significant linearity improvement with this compensation, allowing the PA to maintain the DEVM lower than -47dB at 14.5 dBm output power, over a large ambient temperature range from -40°C to 85°C
Dia, Hussein. "Contribution à la modélisation électrothermique : Elaboration d'un modèle électrique thermosensible des composants MOS de puissance." Thesis, Toulouse, INSA, 2011. http://www.theses.fr/2011ISAT0006/document.
Повний текст джерелаStrong demand for robustness has emerged in all areas of application of power components.Only a detailed analysis of phenomena related directly or indirectly to failures can ensure thereliability of the functions of the new power components. However, these phenomena involvethe coupling between electrical effects, thermal and mechanical, making their study verycomplex. The use of multi-physics modeling is well suited when determining. In this thesis,we propose a methodology for electrical modeling taking into account the effects of temperatureon the localized phenomena that initiate failure is often fatal. In preparation for thecoupled electro-thermal simulation involving MOS power transistors, an electric thermosensitivemodel of the MOS and its body diode has been developed. Correspondingly a set ofexperimental studies was implemented to extract the parameters and model validation. Particularattention was paid to the study of interference phenomena that could occur in a localizedresponse to an inhomogeneous distribution of temperature and hot spots. Thus the workingslimits avalanche, with the outbreak of parasitic bipolar transistor (snapback) and its reversalwere modeled. Benches specific validations of the model for harsh switching conditions wereused by taking precautions related to high temperature. Finally, the complete thermal electricmodel developed was used by the company “EPSILON Ingénierie” for electro-thermal simulationof power MOS mode Avalanche Software adapting Epsilon-R3D
Micout, Jessy. "Fabrication et caractérisation de transistor réalisée à basse température pour l'intégration 3D séquentielle." Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAT008/document.
Повний текст джерелаThe down scaling of MOSFET device is becoming harder and the development of future generation of MOSFET technology is facing some strong difficulties. To overcome this issue, the vertical stacking of MOSFET in replacement of the conventional planar structure is currently investigated. This technique, called 3D VLSI integration, attracts a lot of attention, in research and in the industry. Indeed, this sequential stacking of transistor enables to gain in density and performance without reducing transistors dimensions.More specifically, 3D sequential integration or CoolCube™ at CEA-Leti enables to fully benefit of the third dimension by sequentially manufacturing transistors. Implementing such an integration provides the new constraint of manufacturing top transistor with low thermal budget (below 500°C) in order to preserve bottom-transistor performances. As most of the thermal budget is due to the dopant activation, several innovative techniques are currently investigated at CEA-LETI.In this work, solid phase epitaxy regrowth will be used as the mechanism to activate dopants below 600°C. The aim of this thesis is thus to manufacture and to characterize transistors with low-temperature dopant activation, in order to reach the same performance as devices manufactured with standard thermal budget. The work is organized around the dopant activation, and in three chapters, according to each considered integration scheme (Extension Last/ Extension First, Gate Last/ Gate First) and architecture (FDSOI, FINFET). These chapters, assisted by relevant simulations, electrical and morphological characterizations, will enable to develop a new and stable 500°C recrystallization process for both N and P FETs, and to propose new integration schemes in order to manufacture transistors with low thermal budget and compatible with the 3D sequential integration
Dia, Hussein. "Contribution à la modélisation électrothermique: Elaboration d'un modèle électrique thermosensible du transistor MOSFET de puissance." Phd thesis, INSA de Toulouse, 2011. http://tel.archives-ouvertes.fr/tel-00624193.
Повний текст джерелаBebiche, Sarah. "OTFTs de type N à base de semiconducteurs π-conjugués : fabrication, performance et stabilité". Thesis, Rennes 1, 2015. http://www.theses.fr/2015REN1S105/document.
Повний текст джерелаThe main goal of this present work consists in the fabrication and optimization of N type organic field effect transistors. Bottom Gate Bottom Contact transistors are performed at low temperature T<120°C. Three different electro-deficient organic molecules are thermally evaporated and used as active layer. OTFTs based on LPP core molecule present low field effect mobility around 10-5cm2/V.s. The optimization study investigated on deposition parameters of this molecule on OTFTs performances does not allow improving this mobility. Moreover gate bias stress measurements reveal important instabilities related to this molecule. Indenfluorene derivatives core (IF) based OTFTs show better performances. Field effect mobility µFE=2.1x10-4 cm2/V is reached using IF(CN2)2 meta in optimized deposition conditions and µFE=1x10-2 cm2/V.s is obtained using IF(CN2)2 para after annealing treatment. The investigated gate bias stress study highlights the good electrical stability of IF(CN2)2 para based OTFTs. Temperature measurements allow us studying the charge transport phenomenon in these indenofluorene derivatives. Fabricated N-type OTFTs are used to perform a first electronic circuit that consists in a logic gate (invertor).Finally this low temperature process led us to achieve OTFTs devices on flexible substrates (PEN)
Книги з теми "Thermal transistor"
Oettinger, Frank F. Thermal resistance measurements. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1990.
Знайти повний текст джерелаOettinger, Frank F. Thermal resistance measurements. Gaithersburg, MD: U.S. Dept. of Commerce, National Institute of Standards and Technology, 1990.
Знайти повний текст джерелаYun, Chan-Su. Static and dynamic thermal behavior of IGBT power modules. Konstanz: Hartung-Gorre, 2001.
Знайти повний текст джерелаAnholt, Robert. Electrical and thermal characterization of MESFETs, HEMTs, and HBTs. Boston: Artech House, 1995.
Знайти повний текст джерелаChristou, A. Reliability of high temperature electronics. College Park, Md: Center for Reliability Engineering, University of Maryland, 1996.
Знайти повний текст джерелаInternational High Temperature Electronics Conference (4th 1998 Albuquerque, N.M.). 1998 Fourth International High Temperature Electronics Conference: HITEC, Albuquerque, New Mexico, USA, June 14-18, 1998. New York City, NY: The Institute of Electrical and Electronics Engineers, Inc., 1998.
Знайти повний текст джерелаLee, Sang-Gug. Predictive modeling of high-current output resistance and thermal effects in bipolar junction transistors. 1992.
Знайти повний текст джерелаJeon, Deok-Su. Modeling the temperature dependence of the silicon-on-insulator mosfet for high-temperature applications. 1990.
Знайти повний текст джерелаLin, Angela A. Two dimensional numerical simulation of a non-isothermal GaAs MESFET. 1992.
Знайти повний текст джерела1998 Fourth International High Temperature Electronics Conference: HITEC, Albuquerque, New Mexico, USA, June 14-18, 1998. The Institute of Electrical and Electronics Engineers, Inc, 1998.
Знайти повний текст джерелаЧастини книг з теми "Thermal transistor"
Bisht, Arvind, Yogendra Pratap Pundir, and Pankaj Kumar Pal. "Electro-Thermal Analysis of Vertically Stacked Gate All Around Nano-sheet Transistor." In Communications in Computer and Information Science, 126–36. Cham: Springer Nature Switzerland, 2022. http://dx.doi.org/10.1007/978-3-031-21514-8_12.
Повний текст джерелаBaghaz, E., A. Naamane, and N. K. M’sirdi. "Electrical and Thermal Modeling and Aging Study of a C2M0025120D Silicon Carbide-Based Power MOSFET Transistor." In Lecture Notes in Electrical Engineering, 313–18. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1405-6_38.
Повний текст джерелаStoecker, W. F., and P. A. Stoecker. "Transistors." In Microcomputer Control of Thermal and Mechanical Systems, 45–60. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-6560-0_4.
Повний текст джерелаHarrak, Abdelkhalak, and Salah Eddine Naimi. "Design and Simulation of an Ion Sensitive Field Effect Transistor (ISFET) Readout Circuit, with Low Thermal Sensitivity." In Lecture Notes in Electrical Engineering, 306–12. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1405-6_37.
Повний текст джерелаDenny, Allen, Neelkanth Kirloskar, Babu Rao Ponangi, Rex Joseph, and V. Krishna. "Electro-Thermal Model for Field Effective Transistors." In Recent Advances in Hybrid and Electric Automotive Technologies, 277–84. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-2091-2_21.
Повний текст джерелаLin, Kun Wei. "Hydrogen Sensing Characteristics of High Electron Mobility Transistor with a Catalytic Pd Metal." In THERMEC 2006, 5025–30. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-428-6.5025.
Повний текст джерелаHung, C. W., S. Y. Cheng, Kun Wei Lin, Y. Y. Tsai, P. H. Lai, S. I. Fu, and W. C. Liu. "Hydrogen Detection by a GaAs-Based Transistor with a Palladium (Pd) Thin Film Gate Structure." In THERMEC 2006 Supplement, 275–80. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-429-4.275.
Повний текст джерелаCanali, Claudio, Giuseppe Castellaneta, Fabrizio Magistrali, Marco Sangalli, Carlo Tedesco, and Enrico Zanoni. "Thermally Activated Failure Modes and Mechanisms of High Electron Mobility Transistors." In ESSDERC ’89, 813–16. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_171.
Повний текст джерелаKokkalera, S., C. T. Tsai, L. L. Liou, J. Barrette, C. Bozada, R. Dettmer, B. Fitch, M. Mack, and J. Sewell. "Simulation of Thermally Shunted Multiple-Emitter-Finger AlGaAs/GaAs Heterojunction Bipolar Transistors Using A Finite Element Code." In Computational Mechanics ’95, 610–15. Berlin, Heidelberg: Springer Berlin Heidelberg, 1995. http://dx.doi.org/10.1007/978-3-642-79654-8_100.
Повний текст джерелаSharma, Sanjeev Kumar, Parveen Kumar, and Balwinder Raj. "Introduction to Nanowires." In Advances in Computer and Electrical Engineering, 1–15. IGI Global, 2021. http://dx.doi.org/10.4018/978-1-7998-6467-7.ch001.
Повний текст джерелаТези доповідей конференцій з теми "Thermal transistor"
Oarethu, Johns, Zhigang Song, Pat McGinnis, Stephen Wu, Phong Tran, Mike Tenney, and Richard Oldrey. "Investigation of Thermal Laser Stimulation (TLS) Effects on 7nm FinFET Transistor Parameters." In ISTFA 2022. ASM International, 2022. http://dx.doi.org/10.31399/asm.cp.istfa2022p0129.
Повний текст джерелаKo, Seung Hwan, Inkyu Park, Heng Pan, Albert P. Pisano, and Costas P. Grigoropoulos. "Low Temperature OFET (Organic Field Effect Transistor) Fabrication by Metal Nanoparticle Imprinting." In ASME 2007 InterPACK Conference collocated with the ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ipack2007-33448.
Повний текст джерелаSuwa, Tohru, and Hamid Hadim. "Multi-Packaging-Level Thermal Modeling Technique for Silicon Chip Transistors." In ASME 2009 International Mechanical Engineering Congress and Exposition. ASMEDC, 2009. http://dx.doi.org/10.1115/imece2009-11815.
Повний текст джерелаTsarapkin, Dmitry P., and Alexis V. Kononov. "Thermal Feedback in Transistor Oscillators." In 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum. IEEE, 2007. http://dx.doi.org/10.1109/freq.2007.4319135.
Повний текст джерелаMaize, Kerry, Xi Wang, Dustin Kendig, Ali Shakouri, William French, Barry O'Connell, Philip Lindorfer, and Peter Hopper. "Thermal characterization of high power transistor arrays." In 2009 25th Annual IEEE Semiconductor Thermal Measurement and Management Symposium. IEEE, 2009. http://dx.doi.org/10.1109/stherm.2009.4810742.
Повний текст джерелаZubert, Mariusz, Marcin Janicki, Tomasz Raszkowski, and Andrzej Napieralski. "The thermal model of Fin-FET transistor." In 2015 21st International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE, 2015. http://dx.doi.org/10.1109/therminic.2015.7389597.
Повний текст джерелаChen, Tianbing, Tzung-Yin Lee, Justin Allum, and Mike McPartlin. "The thermal scaling: From transistor to array." In 2014 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). IEEE, 2014. http://dx.doi.org/10.1109/rfic.2014.6851675.
Повний текст джерелаFruehauf, Norbert. "Low Temperature Thin Film Transistor Technologies." In 2007 15th International Conference on Advanced Thermal Processing of Semiconductors. IEEE, 2007. http://dx.doi.org/10.1109/rtp.2007.4383807.
Повний текст джерелаVachhani, M. G., and P. N. Gajjar. "The state of art model for thermal transistor." In INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2015): Proceeding of International Conference on Condensed Matter and Applied Physics. Author(s), 2016. http://dx.doi.org/10.1063/1.4946493.
Повний текст джерелаHossain, Md Mahbub. "Thermal Node Characteristics of a Bipolar Junction Transistor." In 2019 IEEE International Conference on Electro Information Technology (EIT). IEEE, 2019. http://dx.doi.org/10.1109/eit.2019.8834123.
Повний текст джерелаЗвіти організацій з теми "Thermal transistor"
Bennett, G., M. Thompson, T. Larkin, and J. Hedstrom. Rf transistor thermal/electrical characterization. Office of Scientific and Technical Information (OSTI), September 1989. http://dx.doi.org/10.2172/5413222.
Повний текст джерелаOvrebo, Gregory K. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module. Fort Belvoir, VA: Defense Technical Information Center, February 2015. http://dx.doi.org/10.21236/ada616757.
Повний текст джерелаNochetto, Horacio C., Nicholas R. Jankowski, Brian Morgan, and Avram Bar-Cohen. A Hybrid Multi-gate Model of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Device Incorporating GaN-substrate Thermal Boundary Resistance. Fort Belvoir, VA: Defense Technical Information Center, October 2012. http://dx.doi.org/10.21236/ada570599.
Повний текст джерелаBoutros, Karim. Investigation of Lattice and Thermal Stress in GaN/A1GaN Field-Effect Transistors. Fort Belvoir, VA: Defense Technical Information Center, October 2006. http://dx.doi.org/10.21236/ada456241.
Повний текст джерелаBoutros, Karim. Investigation of Lattice and Thermal Stress in GaN/AlGaN Field-Effect Transistors. Fort Belvoir, VA: Defense Technical Information Center, May 2007. http://dx.doi.org/10.21236/ada467566.
Повний текст джерелаHeller, Eric R., Donald Dorsey, Jason P. Jones, Samuel Graham, Matthew R. Rosenberger, William P. King, and Rama Vetury. Electro-Thermo-Mechanical Transient Modeling of Stress Development in AlGaN/GaN High Electron Mobility Transistors (HEMTs) (Postprint). Fort Belvoir, VA: Defense Technical Information Center, February 2014. http://dx.doi.org/10.21236/ada614007.
Повний текст джерела