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Готові списки джерел за темами / Thermal oxide / Статті в журналах

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Статті в журналах з теми "Thermal oxide"

Автор: Grafiati

Опубліковано: 7 червня 2022

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1

Senzaki, Junji, Atsushi Shimozato, Kazushige Koshikawa, Yasunori Tanaka, Kenji Fukuda, and Hajime Okumura. "Emission Phenomenon Observation of Thermal Oxides Grown on N-Type 4H-SiC (0001) Wafer." Materials Science Forum 679-680 (March 2011): 378–81. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.378.

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Photo emission phenomenon and reliability of thermal oxides grown on n-type 4H-SiC (0001) wafer have been investigated using photo emission microscope. Thermal oxides were grown by dry oxidation, and treated in nitrous oxide atmosphere as followed by hydrogen post oxidation annealing. An initial photo emission phenomenon with weak intensity exists just after stress current is applied to the thermal oxide. It is confirmed that most initial emission occurred at the same position as dielectric breakdown of the thermal oxide. Also, the initial emission phenomenon was observed in the MOS capacitors broken by extrinsic defects such as threading screw dislocations and surface defects. In addition, the photo emission due to Fowler-Nordheim tunnel current through the thermal oxide has peak intensity at 2.48 eV.

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2

Huang, Jin Hua, Rui Qin Tan, Jia Li, Yu Long Zhang, Ye Yang, and Wei Jie Song. "Thermal Stability of Aluminum Doped Zinc Oxide Thin Films." Materials Science Forum 685 (June 2011): 147–51. http://dx.doi.org/10.4028/www.scientific.net/msf.685.147.

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Transparent conductive oxides are key electrode materials for thin film solar cells. Aluminum doped zinc oxide has become one of the most promising transparent conductive oxide (TCO) materials because of its excellent optical and electrical properties. In this work, aluminum doped zinc oxide thin films were prepared using RF magnetron sputtering of a 4 at% ceramic target. The thermal stability of aluminum doped zinc oxide thin films was studied using various physical and structural characterization methods. It was observed that the electrical conductivity of aluminum doped zinc oxide thin films deteriorated rapidly and unevenly when it was heated up to 350 °C. When the aluminum doped zinc oxide thin films were exposed to UV ozone for a short time before heating up, its thermal stability and large area homogeneity were significantly improved. The present work provided a novel method for improving the durability of aluminum doped zinc oxides as transparent conductive electrodes in thin film solar cells.

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3

Deng, Hongda, Yongliang Liu, Zhen He, Xiantao Gou, Yefan Sheng, Long Chen, and Jianbing Ren. "Electrochemical corrosion resistance of thermal oxide formed on anodized stainless steel." Anti-Corrosion Methods and Materials 68, no. 2 (April 9, 2021): 105–12. http://dx.doi.org/10.1108/acmm-10-2020-2385.

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Purpose The purpose of this paper is to investigate and explain thermal oxide effect on electrochemical corrosion resistance anodized stainless steel (SS). Design/methodology/approach Electrochemical corrosion resistance of thermal oxides produced on anodized 304 SS in air at 350°C, 550°C, 750°C and 950°C in 3.5 wt.% NaCl solution have been investigated by dynamic potential polarization, EIS and double-loop dynamic polarization. Anodized 304 SS were obtained by anodization at the constant density of 1.4 mA.cm-2 in the solution containing 28.0 g.L-1H3PO4, 20.0 g.L-1C6H8O7, 200.0 g.L-1H2O2 at 70°C for 50 min. SEM and EDS had been also used to characterize the thermal oxides and passive oxide. Findings Interestingly, anodized 304SS with thermal oxide produced at 350°C displayed more electrochemical corrosion and pitting resistance than anodized 304 SS only with passive oxide, as related to the formation of oxide film with higher chromium to iron ratio. Whereas, anodized 304SS with thermal oxide formed at 950°C shows the worse electrochemical corrosion and pitting resistance among those formed at the high temperatures due to thermal oxide with least compact. Originality/value When thermally oxidized in the range of 350°C–950°C, electrochemical corrosion and pitting corrosion resistance of anodized 304 SS decrease with the increase of temperature due to less compactness, more defects of thermal oxide.

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4

Promakhov, Vladimir V., Svetlana P. Buyakova, Vanda Illavszky, Sergey N. Kulkov, and László A. Gömze. "Thermal expansion of oxide systems on the basis of ZrO2." Epitoanyag - Journal of Silicate Based and Composite Materials 66, no. 3 (2014): 81–83. http://dx.doi.org/10.14382/epitoanyag-jsbcm.2014.15.

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5

Mahalingam, Savisha, Abreeza Manap, Salmi Mohd Yunus, and Nurfanizan Afandi. "Thermal Stability of Rare Earth-PYSZ Thermal Barrier Coating with High-Resolution Transmission Electron Microscopy." Coatings 10, no. 12 (December 10, 2020): 1206. http://dx.doi.org/10.3390/coatings10121206.

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Durability of a thermal barrier coating (TBC) depends strongly on the type of mixed oxide in the thermally grown oxide (TGO) of a TBC. This study aims on discovering the effect of thermal stability in the TGO area containing mixed oxides. Two different bondcoats were studied using high-resolution transmission electron microscopy: high-velocity oxygen fuel (HVOF) and air-plasma spray (APS), under isothermal and thermal cyclic tests at 1400 °C. The HVOF bondcoats were intact until 1079 cycles. In comparison, APS failed at the early stage of thermal cycling at 10 cycles. The phase transformation of topcoat from tetragonal to the undesired monoclinic was observed, leading to TBC failure. The results showed that the presence of transient aluminas found in HVOF bondcoat helps in the slow growth of α-Al2O3. In contrast, the APS bondcoat does not contain transient aluminas and transforms quickly to α-Al2O3 along with spinel and other oxides. This fast growth of mixed oxides causes stress at the interface (topcoat and TGO) and severely affects the TBC durability leading to early failure. Therefore, the mixed oxide with transient aluminas slows down the quick transformation into alpha-aluminas, which provides high thermal stability for a high TBC durability.

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6

Kim, Myungjae, Jungshin Kang, Jiwoo Kim, and Jiwoong Kim. "Corrosion Protection Oxide Scale Formed on Surface of Fe-Ni-M (M = Al, Cr, Cu) Inert Anode for Molten Salt Electrolysis." Materials 15, no. 3 (January 18, 2022): 719. http://dx.doi.org/10.3390/ma15030719.

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An oxide scale formed on the surface of metal anodes is crucial for determining the overall quality of molten salt electrolysis (MSE), particularly for the durability of the anode materials. However, the material properties of oxide scales are yet to be revealed, particularly in ternary spinel oxide phases. Therefore, we investigate the mechanical and thermal properties of spinel oxides via first-principles calculations. The oxides are calculated using the models of normal (cubic) and inverse (orthorhombic) spinel compounds. The d-orbital exchange correlation potential of transition metal oxides is addressed using the generalized gradient approximation plus Hubbard U. The lattice constant, formation energy, cohesive energy, elastic modulus, Poisson’s ratio, universal anisotropy index, hardness, minimal thermal conductivity, and thermal expansion coefficient are calculated. Based on the calculated mechanical and thermal properties of the spinel compound, the Fe–Ni–Al inert anode is expected to be the most suitable oxide scale for MSE applications among the materials investigated in our study.

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7

Abdel Halim, K. S., M. Ramadan, A. Shawabkeh, and A. S. Alghamdi. "Thermal Techniques for the Production of Fe-M Alloys." Applied Mechanics and Materials 826 (February 2016): 105–10. http://dx.doi.org/10.4028/www.scientific.net/amm.826.105.

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The present manuscript is designed to investigate the possibility of manufacturing iron-metal alloys (Fe-M) via thermal techniques. These techniques are mainly depends on simultaneous reduction-sintering reactions of metal oxides. The reduction of metal oxides is an important property in metallurgical processes. It can be applied to M-Fe-O systems and also is used to develop inter-metallic alloys with specific properties. The produced metallic materials have wide range of applications and are characterized by unique physical and mechanical properties. The composition of the produced alloys is often a key element in optimizing their properties. Iron oxide doped another metal oxide such as nickel oxide is used as starting materials to produce metallic materials containing iron contaminated with nickel metal using thermal techniques. The sintering-reduction reactions of the composite oxide materials are investigated under different operation conditions. The experimental results show that the reduction-sintering thermal techniques are economic and promising routes for the production of different Fe-M alloys. The different factors affecting the rate of reduction such as temperature and ratio of doping materials are investigated. The results obtained are used to demonstrate the kinetics and mechanisms of reduction of metal oxides.

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8

Zhang, Lihui, Qiong Feng, Anmin Nie, Jiabin Liu, Hongtao Wang, and Youtong Fang. "In SituStudy of Thermal Stability of Copper Oxide Nanowires at Anaerobic Environment." Journal of Nanomaterials 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/670849.

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Many metal oxides with promising electrochemical properties were developed recently. Before those metal oxides realize the use as an anode in lithium ion batteries, their thermal stability at anaerobic environment inside batteries should be clearly understood for safety. In this study, copper oxide nanowires were investigated as an example. Several kinds ofin situexperiment methods includingin situoptical microscopy,in situRaman spectrum, andin situtransmission electron microscopy were adopted to fully investigate their thermal stability at anaerobic environment. Copper oxide nanowires begin to transform as copper(I) oxide at about 250°C and finish at about 400°C. The phase transformation proceeds with a homogeneous nucleation.

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9

Masson, D. P., D. J. Lockwood, and M. J. Graham. "Thermal oxide on CdSe." Journal of Applied Physics 82, no. 4 (August 15, 1997): 1632–39. http://dx.doi.org/10.1063/1.366263.

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10

Kobayashi, W., Y. Teraoka, and I. Terasaki. "An oxide thermal rectifier." Applied Physics Letters 95, no. 17 (October 26, 2009): 171905. http://dx.doi.org/10.1063/1.3253712.

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11

Jóna, E., K. Nem¹eková, A. Plško, D. Ondrušová, and P. Šimon. "Thermal properties of oxide." Journal of Thermal Analysis and Calorimetry 76, no. 1 (2004): 85–90. http://dx.doi.org/10.1023/b:jtan.0000027806.15887.26.

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12

Cheong, K. Y., Wook Bahng, and Nam Kyun Kim. "Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiC." Materials Science Forum 483-485 (May 2005): 689–92. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.689.

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In this paper, the electrical properties of pre- and post-rapid thermal annealed 4H SiC-based gate oxide grown in 10% nitrous oxide (N2O) and in dry oxygen have been investigated, compared, and reported for the first time. After treating the nitrided gate oxide in rapid thermal annealing (RTA), oxide breakdown characteristic has been improved significantly. This improvement has been attributed to the reduction of SiC–SiO2 interface-trap density and the generation of positive oxide charge, acting as an electron-trapping center. However, deleterious effects have been observed in non-nitrided oxide after subjected to the same RTA treatment. The differences in oxide-breakdown strength of these oxides have been explained and modeled.

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13

Chaudhry, M. Iqbal, та W. B. Berry. "Passivation of β–SiC surface with native and nonnative oxides". Journal of Materials Research 4, № 6 (грудень 1989): 1491–94. http://dx.doi.org/10.1557/jmr.1989.1491.

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The passivation characteristics of various insulators are evaluated for the β–SiC surface. It is found that wet thermal oxides yield minimum electrical defects at the oxide-SiC interface. Dry thermal oxide results in too much charge either at the oxide-SiC interface or in the bulk. It is also shown that anodic aluminum oxide seems to possess suitable electrical properties for the fabrication of MOS structures on SiC, whereas the CVD silicon nitride proved to be the worst.

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14

Drajewicz, Marcin, Kamil Dychtoń, and Marek Góral. "Thermal Properties of YSZ Powders for Plasma Spraying." Solid State Phenomena 227 (January 2015): 413–16. http://dx.doi.org/10.4028/www.scientific.net/ssp.227.413.

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The oxides in the case of theirs properties are important materials for industrial application especially, in aircraft industry for application as thermal barrier coatings. Thermal properties of zirconium oxide stabilized by yttria are better than other ceramic materials. This powder could be stabilized in room temperature by addition of rare earth elements. In this article the thermal analyses of yttria stabilized zirconia (YSZ) oxide are presented as a baseline for future measurements of thermal properties of YSZ powder with addition of rare earth elements. The thermal expansion, specific heat, thermal diffusivity and thermal conductivity of commercially available Matco 6700 powder offered by Sulzer Metco company were analyzed by thermal methods.

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15

Агарков, Д. А., М. А. Борик, Г. М. Кораблева, А. В. Кулебякин, И. Е. Курицына, Е. Е. Ломонова, Ф. О. Милович та ін. "Влияние термообработки на теплопроводность монокристаллов твердых растворов на основе ZrO-=SUB=-2-=/SUB=-, стабилизированных оксидами скандия и иттрия". Физика твердого тела 62, № 12 (2020): 2093. http://dx.doi.org/10.21883/ftt.2020.12.50213.160.

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The effect of heat treatment at 1000° C for 400 hours on the thermal conductivity of crystals stabilized with scandium oxide, (ZrO2)1-x(Sc2O3)x (x = 0.08–0.10), and together with scandium and yttrium oxides, (ZrO2)1-x-y(Sc2O3)x(Y2O3)y (x = 0.003−0.20; y = 0.02−0.025). For crystals of zirconium dioxide stabilized with scandium oxide, the most noticeable changes in thermal conductivity concern 9ScSZ crystals, in which changes in the phase composition occur, and a noticeable amount of rhombohedral phase appears. For 8ScSZ crystals, these changes are less noticeable and are mainly caused by the ordering of oxygen vacancies and changes in the microstructure of the samples, while for 10ScSZ crystals they are practically absent. The 10ScSZ crystals have the minimum electrical conductivity, both before and after annealing, which is determined by the highest content of scandium oxide in the solid solution. Small changes in thermal conductivity concern crystals of partially stabilized zirconia codoped with scandium and yttrium oxides. For cubic crystals 8Sc2YSZ and 10Sc2YSZ, there are practically no changes in the value of thermal conductivity, the nature of the temperature dependence of thermal conductivity, and the phase composition of crystals. The introduction of yttrium oxide into solid solutions based on zirconium dioxide along with scandium oxide makes it possible to increase the stability of its phase composition and structurally dependent thermal and electrophysical characteristics.

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16

Qassim, Zainab, Abdulazeez O. Mousa Al-Ogaili, and Khalid Haneen Abass. "Morphology of Copper Oxide Nano-Layer Prepared Via Thermal Evaporation Technique." NeuroQuantology 20, no. 3 (March 26, 2022): 87–94. http://dx.doi.org/10.14704/nq.2022.20.3.nq22046.

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The copper oxide (CuO) nanofilms which were prepared by thermal evaporation technique was annealed at (200)℃ for one and two hours at thickness (75) nm. The effect of annealing temperature on the structure was evaluated using a scanning electron microscope (SEM), the particle size ranged from (15.42-35.05) nm. An accurate study for the root mean square and average roughness has been achieved by usage technique of atomic force microscopy (AFM). This paper considered the optical properties of specimens that are obtained through the measuring of absorbance by a UV-visible spectrophotometer. The refractive index showed a decline by increasing the temperature of annealing, while the absorbance was affected positively by the same influencer. The annealing of (200℃) for 2 hours decreased the value of the optical bandgap from 3.3 to 3.05 eV. In obvious, the quantization effect emerging was caused by the acquisition of high values of the energy gap. The absorption and extinction coefficients were directly proportional to the annealing temperature.

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17

Liu, Hong Bo, Wu Ying Zhang, Feng Lin, and Hong Da Cao. "Comparison and Characterization of Two Preparation Methods of Graphene Oxide." Advanced Materials Research 989-994 (July 2014): 125–29. http://dx.doi.org/10.4028/www.scientific.net/amr.989-994.125.

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The graphene oxides were prepared form graphite by thermal expansion and ultrasonic dispersion. The structure of graphene oxides was characterized by Fourier transform infrared spectrometer (FTIR), scanning electron microscope (SEM), X-ray diffraction (XRD) and Raman spectra. The difference of structure of graphene oxides by two preparation methods was compared. The measurement of FTIR and XRD showed the graphite was completely oxidized. The graphene oxide prepared by thermal expansion would lose large number of active functional groups, such as hydroxyl, carboxyl group, et al. However, the graphene oxide prepared by ultrasonic dispersion can retain these active functional groups. These active functional groups will be benefit to chemically modify the graphene oxides and prepare the polymer/graphene nanocomposites.

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18

Haney, Sarah Kay, Veena Misra, Daniel J. Lichtenwalner, and Anant K. Agarwal. "Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs." Materials Science Forum 740-742 (January 2013): 707–10. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.707.

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MOSFETs and capacitors have been fabricated to investigate the atomic layer depositon (ALD) of SiO2onto SiC compared to thermal oxidation of SiC. Devices were fabricated on 4H-SiC with the following oxidation treatments: thermal oxidation at 1175°C, thermal oxidation at 1175°C followed by a nitric oxide (NO) anneal at 1175°C, and ALD of SiC at 150°C followed by an NO post oxidation anneal (POA) at 1175°C. ALD of the SiO2was performed using 3-aminopropyltriethoxysiliane (3-APTES), ozone and water. Capacitors fabricated with NO annealed ALD oxide and thermal oxide with NO POA exhibited similar CV behavior and yielded similar Dit of 1e11 at 0.5 eV from the conduction band. MOSFETs fabricated with NO PDA ALD oxide exhibited peak field effect mobilities ranging from 32 – 40.5 cm2/Vs compared to 30 –34.5 cm2/Vs for the MOSFETs with NO annealed thermal oxide. The higher mobilities exhibited by the ALD gate oxides were linked through SIMS to higher nitrogen concentrations at the SiO2/SiC interface.

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19

Abdel-Aal, Hisham A. "On the Influence of Thermal Properties on Wear Resistance of Rubbing Metals at Elevated Temperatures." Journal of Tribology 122, no. 3 (October 18, 1999): 657–60. http://dx.doi.org/10.1115/1.555417.

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This paper studies the effects of the heat dissipation capacity of a rubbing material on wear resistance at high temperatures. These effects are studied with a special focus on the dilatation of the thermal energy in sliding. These results suggest a connection between wear transition and the change in the heat dissipation capacity of a rubbing material. The nature of change in the thermal properties before and after the transition influences the thermal environment within the contacting layers. This controls the kinetics of oxide formation and thereby controls wear. Thermal dilatation is a super position of three functions that represent the competing effects of the room temperature thermal properties and their respective variation with temperature. Whence, the change in the thermal properties bears on dilatation. The possible relation between thermal dilatation and protective oxide formation is studied by examining the fretting wear data for two alloys—a Ni-based alloy and a Co-based alloy. The results indicate a strong correlation between the formation of protective oxides and the change in the thermal dilatation of the examined alloys with temperature. Moreover, examination of the wear data suggests that a critical ratio between the effects of the conductivity and those of the effusivity has to be established for favorable wear resistance. This ratio reflects on the intrinsic ability of the material to sustain an oxidative reaction of a controlled rate. So that, the protective glaze oxide layers are formed in a rate that is approximately equal to the rate of oxide layer breakdown. Whence, continuous compensation for the removed oxide layer (self-repairing oxides) is established. [S0742-4787(00)00903-6]

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20

Ishii, Tadao. "Thermal characterization of iron oxide and aluminum oxide powders by emanation thermal analysis." Thermochimica Acta 93 (September 1985): 469–72. http://dx.doi.org/10.1016/0040-6031(85)85118-2.

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21

Hamed, Mai Hussein, David N. Mueller та Martina Müller. "Thermal phase design of ultrathin magnetic iron oxide films: from Fe3O4 to γ-Fe2O3 and FeO". Journal of Materials Chemistry C 8, № 4 (2020): 1335–43. http://dx.doi.org/10.1039/c9tc05921k.

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Thermodynamically “active” oxide interfaces alter the standard iron oxide phase diagram of complex heterostructures. By controlling the effective oxygen pressure, selected iron oxides phases can be designed through a thermal phase design.

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22

Guseinova, E. A., S. E. Yusubova, and B. B. Orujzadeh. "THERMAL ANALYSIS OF THE CATALYTIC SYSTEM OF PHOSFORMOLYBDENIC HETEROPOLY ACID–ALUMINUM OXIDE." Azerbaijan Chemical Journal, no. 1 (March 15, 2022): 22–28. http://dx.doi.org/10.32737/0005-2531-2022-1-22-28.

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The methods of thermal analysis – thermogravimetry, differential thermal analysis – were used to study the catalytic system phosphor-molybdenum heteropoly acid–aluminum oxide. It is shown that the modification of aluminum oxide has a direct effect on the state of the phosphor-molybdenum heteropoly acid. On the surface of ƞ-Al2O3, phosphomolybdic acid is destroyed by interaction with strong Lewis’s acid sites of the carrier, while on γ-Al2O3 it retains the individuality, probably due to multipoint adsorption on weak Bronsted and Lewis acid sites of the oxide

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23

Dessie, Yabibal Getahun, Qi Hong, Bachirou Guene Lougou, Juqi Zhang, Boshu Jiang, Junaid Anees, and Eyale Bayable Tegegne. "Thermochemical Energy Storage Performance Analysis of (Fe,Co,Mn)Ox Mixed Metal Oxides." Catalysts 11, no. 3 (March 10, 2021): 362. http://dx.doi.org/10.3390/catal11030362.

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Metal oxide materials are known for their ability to store thermochemical energy through reversible redox reactions. Metal oxides provide a new category of materials with exceptional performance in terms of thermochemical energy storage, reaction stability and oxygen-exchange and uptake capabilities. However, these characteristics are predicated on the right combination of the metal oxide candidates. In this study, metal oxide materials consisting of pure oxides, like cobalt(II) oxide, manganese(II) oxide, and iron(II, III) oxide (Fe3O4), and mixed oxides, such as (100 wt.% CoO, 100 wt.% Fe3O4, 100 wt.% CoO, 25 wt.% MnO + 75 wt.% CoO, 75 wt.% MnO + 25 wt.% CoO) and 50 wt.% MnO + 50.wt.% CoO), which was subjected to a two-cycle redox reaction, was proposed. The various mixtures of metal oxide catalysts proposed were investigated through the thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), energy dispersive X-ray (EDS), and scanning electron microscopy (SEM) analyses. The effect of argon (Ar) and oxygen (O2) at different gas flow rates (20, 30, and 50 mL/min) and temperature at thermal charging step and thermal discharging step (30–1400 °C) during the redox reaction were investigated. It was revealed that on the overall, 50 wt.% MnO + 50 wt.% CoO oxide had the most stable thermal stability and oxygen exchange to uptake ratio (0.83 and 0.99 at first and second redox reaction cycles, respectively). In addition, 30 mL/min Ar–20 mL/min O2 gas flow rate further increased the proposed (Fe,Co,Mn)Ox mixed oxide catalyst’s cyclic stability and oxygen uptake ratio. SEM revealed that the proposed (Fe,Co,Mn)Ox material had a smooth surface and consisted of polygonal-shaped structures. Thus, the proposed metallic oxide material can effectively be utilized for high-density thermochemical energy storage purposes. This study is of relevance to the power engineering industry and academia.

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24

Jeong, Hae-Kyung, Yun Pyo Lee, Mei Hua Jin, Eun Sung Kim, Jung Jun Bae, and Young Hee Lee. "Thermal stability of graphite oxide." Chemical Physics Letters 470, no. 4-6 (March 2009): 255–58. http://dx.doi.org/10.1016/j.cplett.2009.01.050.

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25

Kirkland, J. P., R. A. Neiser, H. Herman, W. T. Elam, S. Sampath, E. F. Skelton, D. Gansert, and H. G. Wang. "Thermal Spraying Superconducting Oxide Coatings." Advanced Ceramic Materials 2, no. 3B (July 1987): 401–10. http://dx.doi.org/10.1111/j.1551-2916.1987.tb00104.x.

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26

Bruneau, C., N. Soyer, and J. P. Anger. "Thermal degradation of dibutyltin oxide." Journal of Analytical and Applied Pyrolysis 16, no. 2 (June 1989): 183–90. http://dx.doi.org/10.1016/0165-2370(89)85018-1.

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27

Koller, A., J. Fiedlerová, and Hradec Králové. "Thermal decomposition of silver oxide." Thermochimica Acta 92 (September 1985): 445–48. http://dx.doi.org/10.1016/0040-6031(85)85911-6.

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28

Šimon, P., E. Jóna, and V. Pavlík. "Thermal properties of oxide glasses." Journal of Thermal Analysis and Calorimetry 94, no. 2 (November 2008): 421–25. http://dx.doi.org/10.1007/s10973-008-9148-2.

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29

Jóna, E., P. Šimon, K. Nemčeková, V. Pavlík, G. Rudinská, and E. Rudinská. "Thermal properties of oxide glasses." Journal of Thermal Analysis and Calorimetry 84, no. 3 (May 2006): 673–77. http://dx.doi.org/10.1007/s10973-005-7548-0.

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30

Lendvayová, S., K. Moricová, E. Jóna, J. Kraxner, M. Loduhová, V. Pavlík, J. Pagáčová, and S. C. Mojumdar. "Thermal properties of oxide glasses." Journal of Thermal Analysis and Calorimetry 108, no. 3 (April 3, 2012): 901–4. http://dx.doi.org/10.1007/s10973-012-2393-4.

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31

Lendvayová, S., K. Moricová, E. Jóna, S. Uherková, J. Kraxner, V. Pavlík, R. Durný, and S. C. Mojumdar. "Thermal properties of oxide glasses." Journal of Thermal Analysis and Calorimetry 112, no. 2 (March 20, 2013): 1133–36. http://dx.doi.org/10.1007/s10973-013-3105-4.

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32

Srisrual, Anusara, Kasidet Pitaksakorn, and Piyorose Promdirek. "Influence of Water Vapor on Oxide Scale Morphology of Incoloy800HT at 850°C." Applied Mechanics and Materials 875 (January 2018): 36–40. http://dx.doi.org/10.4028/www.scientific.net/amm.875.36.

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Анотація:

This paper aims to report the influence of water vapor on thermal oxide scale grown on incoloy800HT at 850°C. Alloy was prepared in coupons with a surface finishing up to 1200 SiC abrasive paper. Oxidization was performed in tubular furnace at 850°C during 50 hours. The oxidizing gases were varied as a dry oxygen gas and a wet oxygen gas. Thermal oxide morphology was characterized by scanning electron microscopy (SEM). Oxide phases were identified by X-ray diffraction (XRD) and Raman spectroscopy techniques. The oxide multilayers were revealed in all the oxidized samples. Oxide spallation was obviously detected on the samples oxidized under a dry oxygen gas, whereas, the spallation was not detected on the samples oxidized under a wet oxygen gas. Moreover, by water vapor mixing gas, the alloy surface presented a finer oxide. XRD and Raman spectroscopy provided the coincident oxide identification results. The corundum oxide of (Fe,Cr)2O3and the spinel oxide of (Fe,Cr)3O4were identified as a typical thermal oxide, however, the oxides were different in stoichiometry. The existence of water vapor promoted a Cr2O3corundum oxide, whereas, a Fe3O4spinel oxide was hindered from the outer oxide layer. Hence, water vapor not only clearly influenced on oxide scale morphology but also affected on stoichiometry of (Fe,Cr)2O3and (Fe,Cr)3O4solid solution.

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33

Senzaki, Junji, Kazutoshi Kojima, Tomohisa Kato, Atsushi Shimozato, and Kenji Fukuda. "Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer." Materials Science Forum 483-485 (May 2005): 661–64. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.661.

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The effects of dislocations in n-type 4H-SiC(0001) epitaxial wafers on the reliability of thermal oxides have been investigated. Charge-to-breakdown (QBD) values of thermal oxides decrease with increase in the dislocations under a gate-oxide area. Nomarski microscope observations show that dielectric breakdown of thermal oxides occurs at the position of dislocation in epitaxial layer. It is reavealed that basal plane dislocation is the most common cause of the dielectric breakdown.

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34

Sohn, Hong Yong, and Arun Murali. "Plasma Synthesis of Advanced Metal Oxide Nanoparticles and Their Applications as Transparent Conducting Oxide Thin Films." Molecules 26, no. 5 (March 7, 2021): 1456. http://dx.doi.org/10.3390/molecules26051456.

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This article reviews and summarizes work recently performed in this laboratory on the synthesis of advanced transparent conducting oxide nanopowders by the use of plasma. The nanopowders thus synthesized include indium tin oxide (ITO), zinc oxide (ZnO) and tin-doped zinc oxide (TZO), aluminum-doped zinc oxide (AZO), and indium-doped zinc oxide (IZO). These oxides have excellent transparent conducting properties, among other useful characteristics. ZnO and TZO also has photocatalytic properties. The synthesis of these materials started with the selection of the suitable precursors, which were injected into a non-transferred thermal plasma and vaporized followed by vapor-phase reactions to form nanosized oxide particles. The products were analyzed by the use of various advanced instrumental analysis techniques, and their useful properties were tested by different appropriate methods. The thermal plasma process showed a considerable potential as an efficient technique for synthesizing oxide nanopowders. This process is also suitable for large scale production of nano-sized powders owing to the availability of high temperatures for volatilizing reactants rapidly, followed by vapor phase reactions and rapid quenching to yield nano-sized powder.

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35

Seki, Hirofumi, Masanobu Yoshikawa, Takuma Kobayashi, Tsunenobu Kimoto, and Yukihiro Ozaki. "Characterization of Thermal Oxides on 4H-SiC Epitaxial Substrates Using Fourier-Transform Infrared Spectroscopy." Applied Spectroscopy 71, no. 5 (July 12, 2016): 911–18. http://dx.doi.org/10.1177/0003702816658674.

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Fourier transform infrared (FT-IR) spectra were measured for thermal oxides with different electrical properties grown on 4H-SiC substrates. The peak frequency of the transverse optical (TO) phonon mode was blue-shifted by 5 cm−1 as the oxide-layer thickness decreased to 3 nm. The blue shift of the TO mode indicates interfacial compressive stress in the oxide. Comparison of data for the oxide on a SiC substrate with that for similar oxides on a Si substrate implies that the peak shift of the TO mode at the SiO2/SiC interface is larger than that of SiO2/Si, which suggests that the interfacial stress for the oxide on the SiC substrate is larger than that on the Si substrate. For the SiO2/SiC interfacial region (<3 nm oxide thickness), despite the fact that the blue shift of the TO modes becomes larger while approaching the oxide/SiC interface, the peak frequency of the TO modes red-shifts at the oxide/SiC interface. The peak-frequency shift of the TO mode for the sample without post-oxidation annealing was larger than that for the samples post-annealed in a nitric oxide atmosphere. The channel mobilities are correlated with the degree of shift of the TO mode when the oxide thickness is <3 nm. It appears that the compressive stress at the SiO2/SiC interface generates silicon suboxide components and weakens the Si-O bonds. As the result, the TO mode was red-shifted and the oxygen deficiency increased to relax the compressive stress in the oxide with <3 nm thickness. Fourier transform infrared spectroscopy measurements provide unique and useful information about stress and inhomogeneity at the oxide/SiC interface.

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36

Xu, Heng Yu, Cai Ping Wan, and Jin Ping Ao. "Reliability of 4H-SiC (0001) MOS Gate Oxide by NO Post-Oxide-Annealing." Materials Science Forum 954 (May 2019): 109–13. http://dx.doi.org/10.4028/www.scientific.net/msf.954.109.

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In this work, we investigated the oxide reliability of 4H-SiC (0001) MOS capacitors, the oxide was fabricated about 60 nm by thermal oxidation temperature at 1350°C, the oxides than annealed at different temperatures and times in diluted NO (10% in N2). The 4H-SiC MOS structure was analyzed by C-V and I-V measurement. Compared the J-E curves and Weibull distribution curves of charge-to-breakdown for fives samples under different annealing temperature and time, it shows that the high annealing temperature improves the electrical properties as the lifetime enhanced. The mode value of field-to-breakdown (EBD) for thermal oxides by post-oxide-annealing in NO for 30 min at 1350°C was 10.09 MV/cm, the charge-to-breakdown (QBD) of this sample was the highest in all samples, and the QBD value at 63.2% cumulative failure rate was 0.15 C/cm2. The QBD of the sample annealing at 1200°C for 120 min was 0.06 C/ cm2. The effects of NO annealing in high temperature enhance the lifetime of electrical properties and field-to-breakdown obviously. It can be demonstrated that the annealing temperature as high as 1300°C for 30 min can be used to accelerate TDDB of SiC MOS gate oxide.

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37

Pan, Zhi Long, Shi Liang Ao, and Jian Ping Jia. "The Synthesis and Characterization of Oxide Free Tin Nanoparticles." Applied Mechanics and Materials 670-671 (October 2014): 26–29. http://dx.doi.org/10.4028/www.scientific.net/amm.670-671.26.

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Oxide free Tin nanoparticles were synthesized from a chemical reduction method. Their morphological and thermal characterizations were studied in this paper. The X-ray diffraction (XRD) study showed that no oxides of Tin nanoparticles were formed. The thermal characterization by differential scanning calorimetry (DSC) exhibited the size dependency of the melting points. The melting point was as low as 202.16°C.

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38

Shen, Ming Li, Sheng Long Zhu, Li Xin, and Fu Hui Wang. "Hot Corrosion Behavior of a Novel Enamel-Based Thermal Barrier Coating." Materials Science Forum 654-656 (June 2010): 1944–47. http://dx.doi.org/10.4028/www.scientific.net/msf.654-656.1944.

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A novel thermal barrier coating comprised two layers: sputtered bond coat and enamel-zirconia composite top layer. The hot corrosion tests were carried out at 900 °C for 100 h. The salt used in the tests was 25wt% NaCl + 75wt% Na2SO4. Mass loss and spalltion of oxide scales of uncoated K444 specimens was obvious. For the coated specimens, no oxide scale spallation and no weight loss were observed. The TGO formed on the coated specimens was thin layer of mixture oxides of Al, Ti and Cr, while thick multi-layered oxide scales formed on the uncoated specimens. Besides, deep internal oxidation zone was observed on the uncoated specimens. The coatings after hot corrosion tests contained t-ZrO2 and NaAlSi3O8, while the oxide scales formed on the uncoated K444 were TiO2, Cr2O3, NiCr2O4 and Na2Cr2Ti6O16.

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39

Tanimoto, Satoshi. "Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics." Materials Science Forum 527-529 (October 2006): 955–60. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.955.

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In this work, it was clarified that many dislocations present on the substrate surface markedly deteriorated the TDDB property of thermal gate oxide on commercially purchased 4H-SiC epitaxial substrates. However, it was also experimentally shown that even after removing all of the dislocations, there was still a significant difference in the charge-to-breakdown (QBD) value between thermal oxides on SiC and on Si. It was suggested that this difference might partly originate from the intrinsic physics. The ONO gate dielectric was shown to be a promising alternative to thermal oxide. Experimental results indicate that the ONO dielectric on 4H-SiC could achieve a higher QBD value than thermal oxide on Si. A value of QBD = 408 C/cm2 was achieved for an ONO gate dielectric, with a SiO2 equivalent thickness of 40 nm, on regular 4H-SiC.

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40

Constant, Aurore, and Philippe Godignon. "Characterization of Nitrided Gate Oxide Formed by RTP for SiC MOSFET Application." Advanced Materials Research 324 (August 2011): 221–24. http://dx.doi.org/10.4028/www.scientific.net/amr.324.221.

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Gate oxides for SiC lateral MOSFETs have been formed in N2O by rapid thermal processing (RTP) as an alternative to the conventional furnace process. This innovative oxidation method has not only the advantage to significantly reduce the thermal budget compared to a standard oxidation, but also to produce oxide layers with quality comparable to the one grown in a conventional furnace. Moreover, a significant improvement of the oxide quality and MOSFET performance is observed when performing in-situ a H2 anneal prior to oxidation as surface pretreatment. The channel mobility and the breakdown field of the gate oxide are considerably increased.

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41

Senzaki, Junji, Takuma Suzuki, Atsushi Shimozato, Kenji Fukuda, Kazuo Arai, and Hajime Okumura. "Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing." Materials Science Forum 645-648 (April 2010): 685–88. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.685.

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The effect of ammonia (NH3) post-oxidation annealing (POA) technique on the reliability of thermal oxides grown on a n-type 4H-SiC (0001) face by dry oxidation has been investigated. Comparing other POA techniques using hydrogen and nitrous oxide gases, it was indicated that the NH3 POA after dry oxidation remarkably improves the insulating properties of thermal oxides. The mode value of field-to-breakdown for thermal oxides prepared by NH3 POA was 12.1 MV/cm. The charge-to-breakdown (QBD) in the NH3 POA sample was the highest in all samples, and the QBD value at 63% cumulative failure rate was 19.1 C/cm2. In addition, the NH3 POA maintained excellent electron trapping characteristics of thermal oxides against the electron injection.

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42

Zhang, Dong Bo, Sheng Kai Gong, and Hui Bin Xu. "Effects of Pre-Oxide Layer Thickness on Thermal Cyclic Behavior of Thermal Barrier Coatings." Key Engineering Materials 336-338 (April 2007): 1746–49. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.1746.

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Conventional two-layered structure thermal barrier coatings (TBCs) with different pre-oxide layer thicknesses were produced by EB-PVD onto Ni-based superalloy. The pre-oxide layer with different thicknesses was formed after vacuum heat treatment for 2 hours and before ceramic deposition by heating the bond coat to 1323K in air for different times. It has been found that with pre-oxide layer thickness increasing from 1μm to 3.1μm, the growth rate of thermally grown oxide (TGO) increased during thermal cycling test and the thermal cyclic lifetime of TBCs decreased from 730hs to 400hs Two failure modes were observed for TBCs with different pre-oxide layer thicknesses and different TGO layer growth rates.

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43

Spencer, Joseph A., Alyssa L. Mock, Alan G. Jacobs, Mathias Schubert, Yuhao Zhang, and Marko J. Tadjer. "A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga₂O₃, Al₂O₃, In₂O₃, ZnO, SnO₂, CdO, NiO, CuO, and Sc₂O₃." Applied Physics Reviews 9, no. 1 (March 2022): 011315. http://dx.doi.org/10.1063/5.0078037.

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This Review highlights basic and transition metal conducting and semiconducting oxides. We discuss their material and electronic properties with an emphasis on the crystal, electronic, and band structures. The goal of this Review is to present a current compilation of material properties and to summarize possible uses and advantages in device applications. We discuss Ga2O3, Al2O3, In2O3, SnO2, ZnO, CdO, NiO, CuO, and Sc2O3. We outline the crystal structure of the oxides, and we present lattice parameters of the stable phases and a discussion of the metastable polymorphs. We highlight electrical properties such as bandgap energy, carrier mobility, effective carrier masses, dielectric constants, and electrical breakdown field. Based on literature availability, we review the temperature dependence of properties such as bandgap energy and carrier mobility among the oxides. Infrared and Raman modes are presented and discussed for each oxide providing insight into the phonon properties. The phonon properties also provide an explanation as to why some of the oxide parameters experience limitations due to phonon scattering such as carrier mobility. Thermal properties of interest include the coefficient of thermal expansion, Debye temperature, thermal diffusivity, specific heat, and thermal conductivity. Anisotropy is evident in the non-cubic oxides, and its impact on bandgap energy, carrier mobility, thermal conductivity, coefficient of thermal expansion, phonon modes, and carrier effective mass is discussed. Alloys, such as AlGaO, InGaO, (Al xIn yGa1− x− y)2O3, ZnGa2O4, ITO, and ScGaO, were included where relevant as they have the potential to allow for the improvement and alteration of certain properties. This Review provides a fundamental material perspective on the application space of semiconducting oxide-based devices in a variety of electronic and optoelectronic applications.

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44

Levy, Jack B., Stefannie V. Hughes, and Michelle K. Esancy. "Thermal Disproportionation of Diphenylphosphine Oxide and 10H-Phenoxaphosphine 10-Oxides." Phosphorus, Sulfur, and Silicon and the Related Elements 75, no. 1-4 (February 1993): 75–78. http://dx.doi.org/10.1080/10426509308037368.

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45

Shih, D. K., W. T. Chang, S. K. Lee, Y. H. Ku, D. L. Kwong, and S. Lee. "Metal‐oxide‐semiconductor characteristics of rapid thermal nitrided thin oxides." Applied Physics Letters 52, no. 20 (May 16, 1988): 1698–700. http://dx.doi.org/10.1063/1.99710.

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46

Kohlmann, Holger, Anne Rauchmaul, Simon Keilholz, and Alexandra Franz. "Crystal Structure and Thermal Behavior of SbC2O4OH and SbC2O4OD." Inorganics 8, no. 3 (March 19, 2020): 21. http://dx.doi.org/10.3390/inorganics8030021.

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Анотація:

The order of OH groups in the crystal structure of SbC2O4OH, a potential precursor in the synthesis of ternary oxides, was debated. Neutron diffraction on the deuteride SbC2O4OD revealed disordered OD groups with half occupation for deuterium atoms on either side of a mirror plane (SbC2O4OD at T = 298(1) K: Pnma, a = 582.07(3) pm, b = 1128.73(5) pm, c = 631.26(4) pm). O–H stretching frequencies are shifted by a factor of 1.35 from 3390 cm−1 in the hydride to 2513 cm−1 in the deuteride as seen in infrared spectra. SbC2O4OH suffers radiation damage in a synchrotron beam, which leaves a dark amorphous residue. Thermal decomposition at 564 K yields antimony oxide, carbon dioxide, carbon oxide, and water in an endothermic reaction. When using SbC2O4OH as a precursor in reactions, however, ternary oxides are only formed at much higher temperatures.

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47

Garza-Montes-de-Oca, Nelson F., Arnulfo Treviño-Cubero, Javier H. Ramírez-Ramírez, Francisco A. Pérez-González, Rafael D. Mercado-Solís, and Rafael Colás. "On the spallation of oxide scales in high-strength low-alloy (HSLA) hot-rolled steels." Corrosion Reviews 38, no. 4 (August 27, 2020): 355–64. http://dx.doi.org/10.1515/corrrev-2019-0070.

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AbstractIn this work, results on the causes that could promote the abnormal spallation of the oxides formed on the surface of high-strength low-alloy (HSLA) steels are presented. By means of Rietveld refining of X-ray diffraction spectra, scanning electron microscopy analyses and calculations, it was found that the value of the thermal stress experienced by the oxide scale reached a maximum when the oxide scale was comprised by 65% wt magnetite Fe3O4 and 24% wt wustite FeO this, due to the incomplete transformation of the latter phase to Fe3O4 and α-Fe from cooling from 670 °C to ambient temperature. Contrarily, it was found that when a balance in the amount of Fe3O4 and FeO was 46.4 and 46.5%wt respectively, the calculated thermal stress was reduced, and oxide spallation was not that severe. The reasons for oxide scale detachment from the surface of the steels are explained in terms of the adhesion energy of the bulk oxide scale, the amount of magnetite Fe3O4 present in the oxides and the chemical composition of the steel particularly the elements chromium and titanium.

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48

Wu, Lei, and Yong Zhang. "Enhanced thermal oxidative stability of silicone rubber by using cerium-ferric complex oxide as thermal oxidative stabilizer." e-Polymers 19, no. 1 (May 29, 2019): 257–67. http://dx.doi.org/10.1515/epoly-2019-0026.

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AbstractCerium (Ce)-ferric (Fe) complex oxides were prepared via a citric acid sol-gel process, and used as thermal oxidative stabilizers for silicone rubber (SR). The oxides were characterized by X-ray diffraction and Raman spectroscopy. The Ce/Fe molar ratio in Ce-Fe complex oxides significantly influenced the thermal oxidative stability of SR. After aging at 300°C for 24 h, SR filled with 4 phr Ce-Fe complex oxide with a Ce/(Ce+Fe) molar ratio of 0.8 (CeFeO-0.8) exhibited excellent thermal oxidative stability, retaining 56.8% and 54.3% of its original tensile strength and elongation at break, respectively. Some Ce3+ and Fe2+ ions were detected in aged SR composites. Ce3+/Ce4+ and Fe2+/Fe3+ molar ratios in SR/CeFeO-0.8 were less than that in SR/CeO2 and SR/Fe2O3 composites, respectively, as detected by X-ray photoelectron spectroscopy. It implies rapid re-oxidations of Fe2+ and Ce3+ occurred in SR/CeFeO-0.8, enhancing the capacity of CeFeO-0.8 to capture radicals during thermal aging.

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49

Farid, Saad B. H. "Modeling of Viscosity and Thermal Expansion of Bioactive Glasses." ISRN Ceramics 2012 (December 4, 2012): 1–5. http://dx.doi.org/10.5402/2012/816902.

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The behaviors of viscosity and thermal expansion for different compositions of bioactive glasses have been studied. The effect of phosphorous pentoxide as a second glass former in addition to silica was investigated. Consequently, the nonlinear behaviors of viscosity and thermal expansion with respect to the oxide composition have been modeled. The modeling uses published data on bioactive glass compositions with viscosity and thermal expansion. -regression optimization technique has been utilized for analysis. Linear and nonlinear relations are shown to establish the viscosity and thermal expansion coefficients associated with oxide components of the glasses under study. The modeling allows the calculation of viscosity for a given temperature and, accordingly, the fusion temperature of these glasses along with the coefficient of thermal expansion. The established model relations also suggest first- and second-order phosphorus-alkali and alkaline earth oxides interaction which is reflected on the model coefficient that calculates viscosity and thermal expansion.

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50

Grieb, Michael, Masato Noborio, Dethard Peters, Anton J. Bauer, Peter Friedrichs, Tsunenobu Kimoto, and Heiner Ryssel. "Comparison of the Threshold-Voltage Stability of SiC MOSFETs with Thermally Grown and Deposited Gate Oxides." Materials Science Forum 645-648 (April 2010): 681–84. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.681.

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The electrical characteristics and the reliability of different oxides on the 4H-SiC Si-face for gate oxide application in MOS devices are compared under MOSFET operation conditions at room temperature, at 100°C and at 130°C. The oxides are either an 80nm thick deposited oxide annealed in NO or an 80nm thick grown oxide in diluted N2O. The deposited oxide shows significant higher QBD- and lower Dit-values as well as a stronger decrease of drain current under stress than the grown oxide. Although for the deposited oxide, the leakage current below subthreshold increases more than one order of magnitude during constant circuit stress at room temperature, for the thermal oxide it is quite constant, but at higher level for higher temperatures.

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