Дисертації з теми "Thermal Arrest Memory Effect"
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Jardine, A. P. "Shape memory effect thermodynamics and thermal efficiencies of NiTi." Thesis, University of Bristol, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.381385.
Повний текст джерелаKalnitsky, Alexander Carleton University Dissertation Engineering Electrical. "Memory effect and enhanced conductivity in thermal Si0 [subscript 2] implanted with Si." Ottawa, 1989.
Знайти повний текст джерелаDai, Wenhua. "Large signal electro-thermal LDMOSFET modeling and the thermal memory effects in RF power amplifiers." Connect to this title online, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1078935135.
Повний текст джерелаTitle from first page of PDF file. Document formatted into pages; contains xix, 156 p.; also includes graphics (some col.). Includes bibliographical references (p. 152-156).
Amalraj, Julian Joyce. "Effect of variable material properties on purely thermal phase transformations in shape memory alloy wires, modeling and experiments." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape8/PQDD_0020/MQ47001.pdf.
Повний текст джерелаKrishnan, Vinu Bala. "DESIGN, FABRICATION AND TESTING OF A SHAPE MEMORY ALLOY BASED CRYOGENIC THERMAL CONDUCTION SWITCH." Master's thesis, University of Central Florida, 2004. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4404.
Повний текст джерелаM.S.
Department of Mechanical, Materials and Aerospace Engineering
Engineering and Computer Science
Mechanical, Materials and Aerospace Engineering
Terzak, John Charles. "Modeling of Microvascular Shape Memory Composites." Youngstown State University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1389719238.
Повний текст джерелаEsham, Kathryn V. "The Effect of Nanoscale Precipitates on the Templating of Martensite Twin Microstructure in NiTiHf High Temperature Shape Memory Alloys." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1494251602171757.
Повний текст джерелаNiraula, Dipesh. "Physics and applications of conductive filaments in electronic structures: from metal whiskers to solid state memory." University of Toledo / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1561471348406944.
Повний текст джерелаDufour, Hugo. "Etude des effets multicaloriques induits lors de la transformation de phase structurale dans les composés de type Heusler." Thesis, Université Grenoble Alpes, 2020. http://www.theses.fr/2020GRALY024.
Повний текст джерелаThis manuscript is devoted to the study of the multicaloric properties, and in particular magnetocaloric and elastocaloric properties possibly coupled between them, of Ni-Mn-X type Heusler alloys (X= In, Co-In,...). This preliminary research can quickly lead to the development of new cooling devices or new functionalities, hence the interest shown by certain players in the socio-economic world. To achieve this, we studied the structural and magnetic transformation that occurs in temperature between the high-temperature cubic phase known as « austenite » and the low-temperature phase known as « martensite ». The application of a magnetic field or a uniaxial strain shifts the transformation temperatures respectively towards low temperatures or high temperatures and also makes it possible to induce the transformation from one phase to the other. The multicaloric properties result from the near-transformation-temperature-entropy-variation due to the application of those external perturbations.A particular effort has been made to determine the non-consensual martensitic structure. However, martensite is responsible for shape memory properties and a knowledge of the structure led to the understanding of the martensitic transformation at the basis of elastocaloric properties.The originality of the study wad both on the study of elastocaloric properties and on a combination of theoretical and experimental approaches. Indeed, neutron diffraction studies have led to a better understanding of the crystallographic structures. They were coupled with experimental measurements to determine the entropy variations. Those measurements were based on the implementation of versatile measurement systems generally combining the application of uniaxial strains, temperature scanning (77K - 400K), fine temperature or transport measurements and the possible application of a magnetic field. This experimental versatility has made it possible to fully understand the elastocaloric effect of shape memory ferromagnetic alloys
Guidetti, Giulia. "Cellulose photonics : designing functionality and optical appearance of natural materials." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/277918.
Повний текст джерелаKhandelwal, Ashish. "Mechanics of Martensitic Phase transformation in shape memory alloys Experiments and modelling." Thesis, 2019. https://etd.iisc.ac.in/handle/2005/5455.
Повний текст джерелаHu, Shih-Jie, and 胡適杰. "Study on the Influence of Charge Quantity and Thermal Effect in Resistance Random Access Memory." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/yw265e.
Повний текст джерела國立中山大學
材料與光電科學學系研究所
103
In this study, three kinds of resistive switching mechanism: Forming、Reset、Set process in Resistance Random Access Memory(RRAM) will be discussion. And measure by Agilent B1530 fast IV measurement instrument, it makes the time resolution in 10 ns, providing instantaneous observation. The first three part, RRAM was connected in transistor drain, the transistor acts as current controller in order to prevent huge current passing through RRAM causing it hard breakdown result it couldn’t operate normally. As the Forming process compliance current is more larger, it’s High Resistance State(HRS) will distribute from high to low and fitting the I-V curve, the electron transported in HRS by different way. In the Reset process, by controlling different of triangle pulse Raising time to modulate the Heating time before starting Reset. When the Heating time is more longer, the HRS will gradually increasing and stop at a saturation value. The HRS has different because of the heat activing the different of number oxygen(active O2-),the final saturation value is causing by the maximum voltage. Reset input larger power rate, the HRS will larger, too. In Set process, hafnium oxide was served as RRAM active layer, deposited by Atomic Layer Deposition (ALD) with a thickness of 10nm, Applying a triangle pulse, causing RRAM set to the Low Resistance State (LRS).And calculating the charge quantity during set process in different switching time. It could divide into two switching processes.Besides, the I-V curve fitting shows there are two step of Schottky emission conduction mechanism. The second Schottky emission was special and it was caused by the oxygen ion accumulation.
Chen, Hsin-Yu, and 陳信宇. "Effect of Thermal Treatment on Resistive Random Access Memory (RRAM) of Ni / HfOx / TiN Structure." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/52213551713034098329.
Повний текст джерела國立交通大學
電子工程系所
98
In this thesis, we used metal-oxide-metal (MOM) structure of nickel (Ni), non-stoichiometric hafnium oxide (HfOx), and titanium nitride (TiN) to demonstrate RRAM characteristics. Voltage-induced resistance switching is repeatedly observed in the Ni/HfOx/TiN device with average resistance ratio greater than 100. The HfOx film which is annealed in Ar ambient exhibits large current operation. It is probably due to crystallization of HfOx film by X-Ray Diffraction (XRD) result. In order to reduce power dissipation, HfOx is oxygen annealed and we use filamentary model to explain the measured data. Measurement result shows that all operation current and power are smaller about 10 times than the sample which is not annealed in O2 ambient. Operation voltage is not elevated noticeably and endurance is slightly improved after oxygen annealing process. Besides, data retention and non-destructive readout are tested in this thesis. Our study shows that the annealed Ni/HfOx/TiN RRAM is a promising candidate for low power nonvolatile memory applications.
Wu, Tien-Yu, and 吳天佑. "Effect of nitrogen and thermal treatment on resistance random access memory (RRAM) for HfOx film." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/06371486870178594814.
Повний текст джерела國立交通大學
電機學院微電子奈米科技產業專班
98
In recent years, nonvolatile memory research of person more and more, among them in order to resistive random access memory (RRAM) have attracted a large attention, including simple structure, low power consumption, high operation speed, low operation voltage, long retention time, high endurance, non-destruvtive readout, and small cell size. Accordingly, RRAM has been proposed to be one candidate of next generation nonvolatile memory. In this thesis, the HfO2 resistive switching device offers a promising potential for high density and low power memory application with the ease of processing integration. First, we would introduce fundamental Current-Voltage characters of the bistable resistive switching behavior. The Pd and Pd/Al was doped top electrical with different treatment by sputtering method, and discussion treatment effect. Finally, we would decline the conduction mechanism of the device and discuss the influence of treatment. We would choose is operation of low-voltage as development component later.
Lu, Hsi-Chuan, and 盧錫全. "The Effect of Thermal Cycling and Mechanical Properties on the Aged CuAlBe and CuAlBeZr Shape Memory Alloys." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/69100824334012080823.
Повний текст джерела國立臺灣大學
材料科學(工程)研究所
84
In this work,six CuAlBe shape memory alloys with different chemical compositions around eutectoid and a Zr content Cu-11.87 wt%Al-0.594wt%Be-0.949wt%Zr alloy were aged at 260、350 ℃ and 400℃.In order to study the effects of Be and Al on the various pro- perties of the alloys,the transformation temperatuers of the aged alloys were estimated by resistance method;the microstructures of the alloys were observed by SEM and TEM;the shape memory recovery of the alloys were examined by bending test and MTS tensile test. There are various precipetates such as.alpha.,.alpha.1-plate, .gamma.2(Al4Cu9), coherent precipitates,and eutectoid phases in the grain boundary were ob served during isothermal aging of the alloys. These precipitates with different effects on retarding martensitic transformation result in much large variation in the transformation temperature of the alloys after thermal cycling . The Cu-11.91Al-0.54Be alloy aged at 260℃*600hr shows the largest effect mation temperatures,the Ms of the alloy increases 66.5℃ after 100cycles.For the alloys aged at 350℃ and 400℃,the change of Ms much smaller than at 260℃ because the discontinous precip- itates at grain boundary are dominate. For the alloys with the .alpha.1-plate precipitates,the more Be content,the larger varia- tion in the thermal cycle transformation temperature after aging. To study the pseudo- elasticity and the effects on the mecha- nical properties of the refined alloys,adding Zr to refine the grain size of the alloys and using 1% and 3% strain cycle by dy- namical tensile test.The alloys show excellent superelasticity and short fatigue life.For the alloys aged at 260℃ and 3% strain cycle, the strain recovery lower than 100% .But for the alloys aged at 260℃ for 200hr and 1% strain cycle,the best strain re- covery,100% ,could be reached.The refined alloys show very good superelasticity and long fatigue life.
Hunag, Yu-Chi, and 黃育麒. "The Effect of Thermal Treatment on Martensite Structure and Stabilization in a Cu-Al-Mn Shape Memory Alloy." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/41472669433539080264.
Повний текст джерела國立臺灣大學
材料科學與工程學研究所
88
In this work, two kinds of Cu-Al-Mn shape memory alloys with different chemical compositions (Cu-8wt%Al-10wt%Mn, Cu-8wt%Al-9wt%Mn) were melted by VAR. After homogenized and hot rolled, the specimens were heat-treated by direct-quench or step-quench into oil-bath at 100℃, 150℃and 200℃. Then they were investigated by electrical resistance measurement, hardness test and shape memory recovery test to get their characteristics. Further studies were also conducted by Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM) and X-ray diffraction (XRD) in order to get the different phase structures of the alloys. Besides, thermal cycling experiments were used to study the effect of thermal cycling on the Shape Memory Alloy. The results shows that whether under direct-quench or step-quench treatments, both martensites in the two alloys are M18R type, and the extent of monoclinicity is greatly influenced by alloy-type and methods of heat treatment. In Cu-8Al-10Mn alloy, the 150℃ step-quenched specimen has the relatively greatest ordering; while in Cu-8Al-9Mn alloys, it is the direct-quenched one gets the first place. Moreover, when the step-quenched specimen proceeds cycling tests, the hysteretic loop area will get smaller with increasing cycling numbers, which means the shape recovery ability has a decreasing tendency. However, it doesn’t go this way under direct-quench treatment and shape recovery test shows that direct-quenched specimen has better shape memory effect.