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Статті в журналах з теми "The current-voltage characteristic"

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Автор: Grafiati

Опубліковано: 30 травня 2022

Оновлено: 31 травня 2022

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1

Glinkin, E. I. "MODELS IDENTITY OF VOLTAGE-CURRENT CHARACTERISTIC." Tambov University Reports. Series: Natural and Technical Sciences 21, no. 2 (2016): 690–97. http://dx.doi.org/10.20310/1810-0198-2016-21-2-690-697.

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2

Shmelev, G. M., I. I. Maglevanny, and A. S. Bulygin. "Current-voltage characteristic of asymmetric superlattice." Physica C: Superconductivity 292, no. 1-2 (December 1997): 73–78. http://dx.doi.org/10.1016/s0921-4534(97)01640-7.

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3

Shik, A. "Current-voltage characteristic of quantum wires." Journal of Physics: Condensed Matter 10, no. 23 (June 15, 1998): 5237–44. http://dx.doi.org/10.1088/0953-8984/10/23/022.

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4

Shih, I., and C. X. Qiu. "Current/voltage characteristic of CuInSe2 homojunctions." Electronics Letters 21, no. 8 (1985): 350. http://dx.doi.org/10.1049/el:19850247.

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5

Hai, Wenhua, Yi Xiao, Jianshu Fang, Weili Huang, and Xili Zhang. "Current–voltage characteristic of the Josephson chaos." Physics Letters A 265, no. 1-2 (January 2000): 128–32. http://dx.doi.org/10.1016/s0375-9601(99)00875-0.

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6

Zheng, Lirong, Chenglu Lin, and Tso-Ping Ma. "Current - voltage characteristic of asymmetric ferroelectric capacitors." Journal of Physics D: Applied Physics 29, no. 2 (February 14, 1996): 457–61. http://dx.doi.org/10.1088/0022-3727/29/2/025.

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7

Suyarov, Kusharbay Tashbayevich. "RESEARCH OF CURRENT- VOLTAGE CHARACTERISTIC OF PHOTOCONDUCTOR." Theoretical & Applied Science 47, no. 03 (March 30, 2017): 195–99. http://dx.doi.org/10.15863/tas.2017.03.47.28.

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8

Petrov, A. G., and A. Ya Shik. "Current-voltage characteristic of quantum-well heterostructures." Semiconductor Science and Technology 6, no. 12 (December 1, 1991): 1163–66. http://dx.doi.org/10.1088/0268-1242/6/12/011.

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9

S. Tonkoshkur, Alexander, and Alexander V. Ivanchenko. "Modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics." Multidiscipline Modeling in Materials and Structures 10, no. 3 (October 7, 2014): 362–78. http://dx.doi.org/10.1108/mmms-11-2013-0066.

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Анотація:

Purpose – The purpose of this paper is to develop a generalized model of the nonlinear conductivity of varistor ceramic suitable for solving problems of prediction and control of ceramic nonlinearity, stability of varistor properties. Design/methodology/approach – The modeling of current-voltage characteristic of the intergranular barrier in metal oxide varistor ceramics is based on the development of the algorithm. It includes all the known mechanisms of electrotransfer in a wide range of voltages and currents of the current-voltage characteristics, and also takes into account the deviation of the barrier form the Schottky barrier. Findings – The models of double Schottky barrier and double barrier of arbitrary form, as well as the algorithms for calculating the current-voltage characteristics of a single intergranular potential barrier and a separate “microvaristor” with the use of the most well-established understanding of the main mechanisms of electrical are developed. The results of current-voltage characteristics modeling correspond to the existing understanding of the nonlinear electrical conductivity varistor ceramics are based on zinc oxide. The model of double barrier of arbitrary form takes into account the deviation of the barrier form the Schottky barrier which is important in predicting the deformation of the current-voltage characteristics of the varistor products in the process of degradation. Originality/value – The relation between the form of the current-voltage characteristic and the distribution profile of the donor concentration in the surface regions of the semiconductor crystallites constituting the intergranular potential barrier is established. The accumulation of donors in the space charge region leads to the increase in the current on the prebreakdown region of the current-voltage characteristic and the reduction of voltage corresponding to the breakdown region beginning of the current-voltage characteristic. The significant role of the interlayer in the formation of current-voltage characteristic of the intergranular potential barrier is shown.

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10

Sun, Jing, Yanping Li, Lei Cao, Jiaoyun Liu, Xiaorong Shi, and Li Tian. "Effects of Area Ratio on the Characteristics of Metal-Ferroelectric-Metal-Insulator-Semiconductor Field-Effect-Transistors (MFMIS FETs)." Integrated Ferroelectrics 201, no. 1 (September 2, 2019): 183–91. http://dx.doi.org/10.1080/10584587.2019.1668702.

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Анотація:

The switching physics of ferroelectric, series capacitance theory and Pao and Sah’s double integral are used for describing the polarization-voltage (P-V) characteristic of ferroelectric layer, capacitance-voltage (C-V) characteristic of MFMIS capacitor, and drain current-gate voltage (ID-VGS) and drain current-drain voltage (ID-VDS) characteristics of MFMIS FET. The effects of the area ratio on the P-V, C-V, ID-VGS, and ID-VDS characteristics are discussed. The results indicate that with the increase of the area ratio, the P-V characteristic, memory windows of C-V and ID-VGS characteristics become saturated, while the drain current ON/OFF ratio and applied voltage for saturated memory window decrease.

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11

Fistul', Michail V. "Current-voltage characteristic of the HTS-metal junctions." Physica C: Superconductivity 185-189 (December 1991): 2615–16. http://dx.doi.org/10.1016/0921-4534(91)91431-3.

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12

Laikhtman, B. "Current-voltage characteristic of double normal tunnel junctions." Physical Review B 43, no. 4 (February 1, 1991): 2731–34. http://dx.doi.org/10.1103/physrevb.43.2731.

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13

Ioannidis, A., E. Forsythe, Yongli Gao, M. W. Wu, and E. M. Conwell. "Current–voltage characteristic of organic light emitting diodes." Applied Physics Letters 72, no. 23 (June 8, 1998): 3038–40. http://dx.doi.org/10.1063/1.121533.

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14

Cai, Kunpeng, Rui Wang, Bo Li, and Ji Zhou. "Hysteretic current-voltage characteristic in polycrystalline ceramic ferrites." Applied Physics Letters 97, no. 12 (September 20, 2010): 122501. http://dx.doi.org/10.1063/1.3486476.

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15

Lebedev, S. M., O. S. Gefle, and A. E. Strizhkov. "Novel polymeric composites with nonlinear current-voltage characteristic." IEEE Transactions on Dielectrics and Electrical Insulation 20, no. 1 (February 2013): 289–95. http://dx.doi.org/10.1109/tdei.2013.6451369.

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16

Vakulenko, O. V., S. V. Kondratenko, and B. M. Shutov. "Varistor-like current-voltage characteristic of porous silicon." Semiconductor Physics, Quantum Electronics and Optoelectronics 2, no. 2 (July 12, 1999): 88–89. http://dx.doi.org/10.15407/spqeo2.02.088.

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17

Takai, D., and K. Ohta. "The current–voltage characteristic in an ultrasmall junction." Superlattices and Microstructures 22, no. 3 (October 1997): 421–25. http://dx.doi.org/10.1006/spmi.1996.0449.

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18

Sato, Yukio, Fumiyasu Oba, Masatada Yodogawa, Takahisa Yamamoto, and Yuichi Ikuhara. "Current-Voltage Characteristic and Grain Boundary Structure in Undoped and Pr and Co Doped ZnO Bicrystals." Materials Science Forum 475-479 (January 2005): 3867–70. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.3867.

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Анотація:

Our recent studies on current-voltage characteristic and grain boundary structure in ZnO bicrystals are reviewed in this paper. All types of undoped ZnO bicrystals showed Ohmic characteristics. This indicates that nonlinear current-voltage characteristic cannot be generated solely by the atomic disarrangement in undoped ZnO. On the other hand, co-doped ZnO bicrystals showed nonlinear current-voltage characteristics, which depended on the types of grain boundary. It is considered that the nonlinearity depends on the Pr concentrations at the respective grain boundaries.

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19

COMTE, J. C., and P. MARQUIÉ. "GENERATION OF NONLINEAR CURRENT–VOLTAGE CHARACTERISTICS: A GENERAL METHOD." International Journal of Bifurcation and Chaos 12, no. 02 (February 2002): 447–49. http://dx.doi.org/10.1142/s0218127402004462.

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Анотація:

A general method allowing to construct nonlinear resistors with arbitrary current–voltage (I–V) characteristics is proposed. The example of a cubic I–V characteristic is presented showing a perfect agreement between the theoretical desired resistor and its electronic realization based on analog multipliers.

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20

Gojaev, E., P. Alieva, N. Nabiev, and R. Rahimov. "Current-voltage Characteristic of Bridgeman-Stockbarger InGaSe2 Thin Films." Physical Science International Journal 9, no. 1 (January 10, 2016): 1–7. http://dx.doi.org/10.9734/psij/2016/19833.

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21

Konobeeva, N. N., and A. V. Pak. "Current-voltage characteristic of tunneling contact carbon nanotube – metall." Vestnik Volgogradskogo gosudarstvennogo universiteta. Serija 1. Mathematica. Physica, no. 1 (June 5, 2013): 93–98. http://dx.doi.org/10.15688/jvolsu1.2013.1.8.

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22

NAKAJIMA, Akihiro, Kenichi SUGANO, and Tsunenori SUZUKI. "Tunneling current characteristic against a bias voltage on STM." Journal of Advanced Science 9, no. 1/2 (1997): 146–47. http://dx.doi.org/10.2978/jsas.9.146.

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23

Bortsov, Alexander. "Approximation of current-voltage characteristic of ventiled solar battery." Bulletin of NTU "KhPI". Series: Problems of Electrical Machines and Apparatus Perfection. The Theory and Practice 4, no. 2 (December 22, 2020): 27–29. http://dx.doi.org/10.20998/2079-3944.2020.2.05.

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24

Dei, Michele, Nicolò Nizza, Massimo Piotto, and Paolo Bruschi. "A voltage controlled CMOS current divider with linear characteristic." Analog Integrated Circuits and Signal Processing 58, no. 1 (August 15, 2008): 43–47. http://dx.doi.org/10.1007/s10470-008-9211-8.

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25

Pyrkin, Anton A., Fernando Mancilla-David, Romeo Ortega, Alexey A. Bobtsov, and Stanislav V. Aranovskiy. "Identification of the Current—Voltage Characteristic of Photovoltaic Arrays." IFAC-PapersOnLine 49, no. 13 (2016): 223–28. http://dx.doi.org/10.1016/j.ifacol.2016.07.955.

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26

Iglesias, Y., M. Peiteado, J. de Frutos, and A. C. Caballero. "Current–voltage characteristic behaviour of dense Zn2SnO4-ZnO ceramics." Journal of the European Ceramic Society 27, no. 13-15 (January 2007): 3931–33. http://dx.doi.org/10.1016/j.jeurceramsoc.2007.02.065.

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27

Kirillov, V. I., and I. B. Kireenko. "On the current-voltage characteristic of the oxide process." Journal of Experimental and Theoretical Physics 108, no. 6 (June 2009): 1036–43. http://dx.doi.org/10.1134/s1063776109060156.

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28

Pellegrini, B. "Reverse current‐voltage characteristic of almost ideal siliconp‐njunctions." Journal of Applied Physics 69, no. 2 (January 15, 1991): 1071–80. http://dx.doi.org/10.1063/1.347374.

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29

Gilabert, A., S. Roux, and E. Guyon. "Current-voltage characteristic of a non linear resistor network." Journal de Physique 48, no. 10 (1987): 1609–11. http://dx.doi.org/10.1051/jphys:0198700480100160900.

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30

Cirillo, C., M. Caputo, L. Parlato, M. Ejrnaes, D. Salvoni, R. Cristiano, G. P. Pepe, and C. Attanasio. "Ultrathin superconducting NbRe microstrips with hysteretic voltage-current characteristic." Low Temperature Physics 46, no. 4 (April 2020): 379–82. http://dx.doi.org/10.1063/10.0000871.

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31

Ries, G., H. W. Neumuller, and W. Schmidt. "Voltage-current characteristic in Bi2Sr2CaCu2O8from transport and magnetization measurements." Superconductor Science and Technology 5, no. 1S (January 1, 1992): S81—S84. http://dx.doi.org/10.1088/0953-2048/5/1s/013.

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32

Liu, Bo, Zhi Tang Song, Song Lin Feng, and Bomy Chen. "Current-Voltage Characteristic of C-RAM Nano-Cell-Element." Solid State Phenomena 121-123 (March 2007): 591–94. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.591.

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Анотація:

Nano-cell-elements of chalcogenide random access memory (C-RAM) based on Ge2Sb2Te5 films have been successively fabricated by using the focused ion beam method. The minimum contact size between the Ge2Sb2Te5 phase change film and bottom electrode film in the nano-cell-element is in diameter of 90nm. The current-voltage characteristics of the C-RAM cell element are studied using the home-made current-voltage tester in our laboratory. The minimum SET current of about 0.3mA is obtained.

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33

Fuchs, D., and H. Sigmund. "Analysis of the current-voltage characteristic of solar cells." Solid-State Electronics 29, no. 8 (August 1986): 791–95. http://dx.doi.org/10.1016/0038-1101(86)90181-4.

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34

Chen, D. X., and C. Gu. "Alternating current loss in a cylinder with power-law current-voltage characteristic." Applied Physics Letters 86, no. 25 (June 20, 2005): 252504. http://dx.doi.org/10.1063/1.1947912.

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35

KANG, ENG SIEW, MUHAMMAD TAGHI AHMADI, SOHAIL ANWAR, and RAZALI ISMAIL. "ENERGY QUANTIZATION ON THE CURRENT-VOLTAGE CHARACTERISTIC OF NANOSCALE TWO-DIMENSIONAL MOSFET." International Journal of Modern Physics B 27, no. 17 (July 3, 2013): 1350077. http://dx.doi.org/10.1142/s021797921350077x.

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Анотація:

The current-voltage characteristic for nanoscale MOSFET is presented based to the velocity saturation and quantum confinement. It has been clarified that the drain velocity which is saturated with an increased drain voltage limits the onset of the current saturation. In the presence of high electric field, the motion of the velocity saturation that is randomly oriented in the equilibrium becomes streamlined and unidirectional. The model presents the current-voltage characteristic from the drift-diffusion regime to the ballistic regime with the presence of the quantum confinement on the charge carrier distribution and the energy quantization. The obtained results are considered in the modeling of the current-voltage characteristics of nanoscale two-dimensional MOSFET and show good agreement with the experimental data without using any artificial parameters.

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36

Саидов, А. С., А. Ю. Лейдерман, Ш. Н. Усмонов та К. А. Амонов. "Эффект инжекционного обеднения в p-Si-n-(Si-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(ZnSe)-=SUB=-x-=/SUB=- (0≤ x≤0.01) гетероструктуре". Физика и техника полупроводников 52, № 9 (2018): 1066. http://dx.doi.org/10.21883/ftp.2018.09.46154.8706.

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Анотація:

AbstractThe current–voltage characteristics of p -Si– n -(Si_2)_1 –_ x (ZnSe)_ x (0 ≤ x ≤ 0.01) heterostructures are studied at various temperatures. It is found that the current–voltage characteristics of such structures contain a portion of a sublinear increase in the current with voltage such as V = V _0 exp( Jad ). The concentrations of deep impurities responsible for the appearance of the sublinear portion in the current–voltage characteristic are estimated. The experimental results are explained based on the theory of the injection depletion effect.

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37

Islam, Mirwazul, and Grigory Simin. "Compact Model for Current Collapse in GaN-HEMT Power Switches." International Journal of High Speed Electronics and Systems 25, no. 01n02 (March 2016): 1640001. http://dx.doi.org/10.1142/s0129156416400012.

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Анотація:

We present a simple yet accurate model describing current-voltage characteristics of GaN-HEMT power switches in presence of carrier trapping often referred to as current collapse. The model accounts for time-dependent changes in the source-gate and gate-drain resistances after application of high drain voltage. The model also has a regime describing ‘fast’ current voltage characteristics when the applied voltage swing occurs within a period of time much shorter than the characteristic trapping – detrapping times. The model is written in Verilog-A and can be implemented in SPICE-type circuit simulators.

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38

ASKERZADE, İ̇man. "CURRENT-VOLTAGE CHARACTERISTIC OF JOSEPHSON JUNCTION WITH FRACTIONAL TERM IN CURRENT-PHASE RELATION." Eskişehir Technical University Journal of Science and Technology A - Applied Sciences and Engineering 21 (November 27, 2020): 87–90. http://dx.doi.org/10.18038/estubtda.822636.

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39

Kamilov, I. K., K. M. Aliev, Kh O. Ibragimov, and N. S. Abakarova. "Current oscillations and N-shaped current–voltage characteristic in the manganite Sm1−xSrxMnO3." Low Temperature Physics 30, no. 9 (September 2004): 736–38. http://dx.doi.org/10.1063/1.1802972.

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40

Kamilov, I. K., K. M. Aliev, Kh O. Ibragimov, and N. S. Abakarova. "N-shaped voltage-current characteristic and current oscillations in Sm1−x SrxMnO3 manganite." Journal of Experimental and Theoretical Physics Letters 78, no. 8 (October 2003): 485–87. http://dx.doi.org/10.1134/1.1637699.

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41

Meilikhov, E., and Yu Gershanov. "Percolation model of ceramic high-Tc superconductors. Critical current and current-voltage characteristic." Physica C: Superconductivity 157, no. 3 (March 1989): 431–38. http://dx.doi.org/10.1016/0921-4534(89)90267-0.

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42

Gluskin, E. "Discussion of the voltage/current characteristic of a fluorescent lamp." IEE Proceedings A (Physical Science, Measurement and Instrumentation, Management and Education) 136, no. 5 (September 1989): 229–32. http://dx.doi.org/10.1049/ip-a-2.1989.0039.

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43

Lethuillier, P. "Analysis of the current‐voltage characteristic of the rf SQUID." Journal of Applied Physics 73, no. 11 (June 1993): 7935–48. http://dx.doi.org/10.1063/1.353947.

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44

Pan, Feng, Yan Xu, Xia Xiao, Ken Xu, and Shiyan Ren. "Characteristic analysis of shunt for high voltage direct current measurement." Measurement 45, no. 3 (April 2012): 597–603. http://dx.doi.org/10.1016/j.measurement.2011.08.027.

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45

Kurniawan, Oka, Man-Fai Ng, Wee Shing Koh, Zuan Yi Leong, and Erping Li. "Simplified model for ballistic current–voltage characteristic in cylindrical nanowires." Microelectronics Journal 41, no. 2-3 (February 2010): 155–61. http://dx.doi.org/10.1016/j.mejo.2010.01.013.

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46

Kudrin, A. V., M. V. Dorokhin, and Yu A. Danilov. "A magnetically controlled LED with S-shaped current-voltage characteristic." Technical Physics Letters 38, no. 11 (November 2012): 1045–47. http://dx.doi.org/10.1134/s1063785012110247.

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47

Golovin, A. I., E. K. Egorova, and A. I. Shloido. "Estimation of the current-voltage characteristic of an open discharge." Technical Physics 59, no. 10 (October 2014): 1445–51. http://dx.doi.org/10.1134/s1063784214100156.

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48

Dorofeev, G., V. Drobin, and H. Malinowski. "Pulse magnetization and voltage-current characteristic of YBa2Cu3O7-x film." Journal of Physics: Conference Series 507, no. 1 (May 12, 2014): 012009. http://dx.doi.org/10.1088/1742-6596/507/1/012009.

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49

Ido, Toshiyuki, Satomi Sawada, Hideo Goto, and Masahiro Tahashi. "Voltage–current hysteretic characteristic in a Ni–Cdl−xMnxTe structure." Journal of Alloys and Compounds 449, no. 1-2 (January 2008): 188–90. http://dx.doi.org/10.1016/j.jallcom.2006.02.079.

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50

Ovchinnikov, Yu N., and A. Schmid. "Resonance phenomenon in current-voltage characteristic of the Josephson junction." Physica B: Condensed Matter 194-196 (February 1994): 1473–74. http://dx.doi.org/10.1016/0921-4526(94)91236-x.

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