Дисертації з теми "TERAHERTZ (THZ) RADIATION"
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Numan, Nagla Numan Ali. "Terahertz (THz) spectroscopy." Thesis, Stellenbosch : Stellenbosch University, 2012. http://hdl.handle.net/10019.1/71690.
Повний текст джерелаENGLISH ABSTRACT: Terahertz radiation is currently used in security, information and communication technology (ICT), and biomedical sciences among others. The usability of terahertz (THz) radiation, in many of its applications depends on characteristics of the materials being investigated in the THz range. At the heart of THz usage is a THz spectroscopy system necessary for the generation and detection of the THz radiation. In this thesis, we characterise such a THz spectroscopy system. In our typical THz spectrometric system, we make use of femtosecond (fs) laser technology and pump-probe principles for emission and detection of THz radiation. Background about the principles of generation THz radiation using fs triggered antennas and the principles of the spectroscopy technique and appropriate literature references are presented. Using an assembled commercially available kit, we reproduce known spectra in order to confirm correct functionality (for calibration) of the assembled spectroscopy system and to gain experience in interpreting these spectra. By introducing a suitable x - y scanning device we construct a crude THz imaging device to illustrate the principle.
AFRIKAANSE OPSOMMING: Terahertsstraling word deesdae wyd in die sekuriteits, inligting-en-kommunikasie en biomediese sektore aangewend. Die gepastheid van terahertsstraling (THz) vir ’n spesifieke toepassings hang af van die eienskappe van die materiale wat ondersoek word. Vir die uitvoer van sulke eksperimente word ’n THz-spektroskopie sisteem benodig vir die opwekking en meting van THz-straling. In hierdie tesis word so ’n THz-spektroskopie sisteem beskou en gekarakteriseer. In die sisteem word van ’n femtosekondelaser (fs) gebruik gemaak in ’nn pomp-en-proef opstelling vir die uitstraling en meting van THz-straling. Die beginsels rakende die opwekking van THz-straling, deur gebruik te maak van ’n antenna wat deur ’n fs-laser geskakel word, asook die beginsels van die spektroskopiese tegniek, met toepaslike verwysings, word in die tesis aangebied. Deur gebruik te maak van’n kommersiële THz opstelling is bekende spektra gemeet om die korrekte funksionering (vir kalibrasie doeleindes) na te gaan en om ondervinding op te doen in die interpretasie van hierdie spektra. ’n X-Y-translasie toestel is tot die opstelling bygevoeg om THz-afbeelding moontlik te maak en sodoende hierdie beginsel te illustreer.
Suzanovičienė, Rasa. "Investigation of carrier kinetics in semiconductors by terahertz radiation pulses." Doctoral thesis, Lithuanian Academic Libraries Network (LABT), 2010. http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2010~D_20101116_163924-89818.
Повний текст джерелаUltrasparčių puslaidininkinių komponentų kūrimas reikalauja gilesnio supratimo apie tai, kaip puslaidininkiuose vyksta fizikiniai procesai, trunkantys kelias pikosekundes ar net mažiau nei vieną pikosekundę. Tokie reiškiniai, kaip elektronų impulso ir energijos relaksacija bei nepusiausvyrųjų krūvininkų pagavimas yra labai svarbūs puslaidininkinių fotonikos ir terahercinio diapazono prietaisų veikimui. Iki pastarojo meto pagrindinis ultrasparčiųjų procesų puslaidininkiuose tyrimo įrankis buvo optiniai metodai, kuriuose elektronų dinamikai stebėti buvo pasitelkiami pikosekundinių ar femtosekundinių lazerių impulsai. Nepaisant išskirtinai didelės šių metodų laikinės skyros, optinio kaupinimo-zondavimo matavimų rezultatus yra palyginti sudėtinga interpretuoti. Šie rezultatai dažniausiai yra įtakojami kelių sistemos parametrų kitimo ir įvairių fizikinių reiškinių tarpusavio sąveikos, todėl sunkiai susiejamas su kuria nors elektronų laikine charakteristika. Disertacijos darbo tikslas – naudojant terahercinės spinduliuotės impulsus išmatuoti elektronų impulso ir energijos relaksacijos trukmes keliuose siauratarpiuose puslaidininkiuose bei jų gyvavimo trukmes medžiagose, skirtose fotolaidžių terahercinės spinduliuotės emiterių ir detektorių gamybai. Šioje disertacijoje yra pateikiami įvairių charakteringų elektroninius procesus puslaidininkiuose apibūdinančių trukmių matavimų naudojant terahercinės spinduliuotės impulsus rezultatai. Tokie tyrimai atlikti ir optinio žadinimo –... [toliau žr. visą tekstą]
But, Dmytro. "Détecteurs de radiation THz à base de silicium." Thesis, Montpellier 2, 2014. http://www.theses.fr/2014MON20170/document.
Повний текст джерелаThis thesis is devoted to study of terahertz detectors based on field-effect transistors fabricated using silicon technology and they comparison to InGaAs/InP ones. The main research effort was devoted to the problem of detectors linearity at high radiation intensities. The photoresponse of field effect transistors to terahertz radiation in a wide range of intensities: from 0.5 mW/cm2 up to 500 kW/cm2 and for frequencies from 0.13 THz to 3.3 THz was studied. This work shows that the photoresponse of all studied detectors increases linearly with increasing radiation intensity up to a few kW/cm2 range and is followed by the nonlinear and saturation parts for higher radiation intensities. This effect has led to the new model of broadband field-effect transistor detectors. The model is based on the phenomenological knowledge of the transistor static transfer characteristic and explains the photoresponse nonlinearity as related to non-linearity and saturation of the transistor channel current. The developed model explains consistently experimental data both in linear and nonlinear regions of terahertz detection
Niklas, Andrew John. "Characterization of Structured Nanomaterials using Terahertz Frequency Radiation." Wright State University / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=wright1347461386.
Повний текст джерелаAl-Ibadi, Amel. "Terahertz imaging and spectroscopy of biomedical tissues : application to breast cancer detection." Thesis, Bordeaux, 2018. http://www.theses.fr/2018BORD0059/document.
Повний текст джерелаThe work of this thesis consists in developing terahertz spectroscopy and imaging tools for medical applications. The goal is to determine the potential and effectiveness of terahertz spectroscopy and imaging in the detection of cancer regions and the distinction between diseased and healthy tissue for breast cancer in women. Terahertz spectroimaging is a non-contact, non-ionizing technique for rapid results compared to standard clinical analysis. Experimental studies are divided into two main sections:Section IThis part focuses on THz spectroscopy using THz radiation. The mastery of this technique makes it possible to work in reflection or transmission mode with frequencies in the terahertz bandwidth. Several types of materials have been used as ghosts for the calibration of the experiment: solids (silica, teflon, sapphire and glass), liquids (methanol, water and alcohol) and biological tissues (cancer, fiber and fat), as well as a mixture (water-methanol). The refractive indices, the absorption coefficients and the complex dielectric functions were first measured and extracted and then fitted with a Debye model. Biological tissues have appeared heterogeneous in thickness and with surfaces that may be irregular, making it difficult to extract accurate information because of induced artifacts. The signals have been processed according to a rigorous protocol: The measurements are carried out on a perfectly characterised substratet in transmission to reduce the uncertainties on the phase during the measurements in reflection. The THz signals reflected at the interfaces between the air / sample, air / window, water / window and window / window are used as a basic signal to estimate and improve the signal-to-noise ratio in the spectroscopy measurements. The advantage of this method is its accuracy, simplicity and ease of application for a reflection system with an angle of incidence. Measurement of refractive indices and absorption coefficients of samples with tumor and healthy tissue revealed that the tumor regions showed significant differences from normal tissue during terahertz tissue-radiation interaction.Section II:The second part of this study focuses on THz imaging for breast cancer detection in both transmission and reflection modes. Several types of samples have been studied. Sections used included paraffin-embedded tissue, fresh tissues removed from the OR, formalin-fixed, and blocks. For this the spectrometer has been moved to the hospital. More than 50 samples were inspected. Three image processing methods were used: cutting, automation and manual image sorting. In addition, time domain and frequency domain images were analyzed to describe and identify the different regions of mammary tissue studied and to determine the contrast between healthy tissue and diseased tissue. The amount of differential water present in diseased tissue can be one of the sources of contrast. In fact, the cancerous tissue has a higher water content than that of normal fibers or adipose tissue, which makes it possible to discriminate the cancerous, fibrous and fatty regions on the THz images
Wachsmuth, Matthew George. "Measurement and Characterization of Terahertz Radiation Propagating Through a Parallel Plate Waveguide." PDXScholar, 2011. https://pdxscholar.library.pdx.edu/open_access_etds/317.
Повний текст джерелаSikharin, Suphakul. "Development of Compact Accelerator-Based Terahertz Radiation Source at Kyoto University." Kyoto University, 2017. http://hdl.handle.net/2433/228250.
Повний текст джерелаLarsen, Mads Jacob Hedegaard. "Non-Contact Probes for Characterization of THz Devices and Components." Wright State University / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=wright1369393504.
Повний текст джерелаVieille, Grosjean Mélissa. "Atomes de Rydberg : Étude pour la production d'une source d'électrons monocinétique. Désexcitation par radiation THz pour l'antihydrogène." Thesis, Université Paris-Saclay (ComUE), 2018. http://www.theses.fr/2018SACLS349/document.
Повний текст джерелаSince 1975, Rydberg atoms have been studied and now used in quantum information for their particular interaction properties. However, these physical objects can be involved in various other applications, where their remarkable characteristics make them perfect tools. In this paper, we will focus on two distinct applications involving cesium Rydberg atoms. First, we will see how to use such atoms to produce a source of monocinetic electrons, thanks to the singular ionization mechanism of this type of atoms at a precise value of electric field dependent on the excitation level. The electrons thus produced are then extracted and their energy dispersion measured. Theoretically and according to the first experimental measurements made during the thesis, we will show that we can hope an energy dispersion of the electrons produced by this meV technique, a resolution never reached before. Today, this type of source is becoming an indispensable tool for the development and study of new materials by molecular scale chemical reaction control and for phonon mapping. In a second step, we will see that it is possible to de-energize a cloud of Rydberg atoms of various levels thanks to an external source in the tera-hertz domain. This project is part of the ongoing anti-matter experiments at CERN, which aim to unravel the mystery of the matter/anti-matter asymmetry. The current methods of production of antihydrogen, forms clouds of these anti-atoms in different Rydberg states. To study them, it is then necessary to de-energize as many antihydrogen atoms as possible to the fundamental level. We will present the method envisaged, as well as the results obtained experimentally on a device created during the thesis to show the feasibility of the technique. These first results show that it is possible to accelerate the deenergization of a Rydberg atom on a very high state thanks to a lamp behaving like a black body. We will detail the improvements envisaged, in particular to adapt the spectrum of the THz frequencies to use and prevent the photoionization of atoms, by filters or by spectral shaping via the use of a photomixer
Pallas, Florent. "Etude théorique et expérimentale du fonctionnement bifréquence de microlasers continus et impulsionnels pour la génération d'ondes RF et THz." Phd thesis, Université de Grenoble, 2012. http://tel.archives-ouvertes.fr/tel-00877894.
Повний текст джерелаCliffe, Matthew. "Generation of longitudinally polarised terahertz radiation for the energy manipulation of relativistic electron beams." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/generation-of-longitudinally-polarised-terahertz-radiation-for-the-energy-manipulation-of-relativistic-electron-beams(5ea447a5-bd46-4d87-8a62-5c7c01f5b8e4).html.
Повний текст джерелаBerenguer, Verdú Antonio José. "Analysis and design of efficient passive components for the millimeter-wave and THz bands." Doctoral thesis, Universitat Politècnica de València, 2017. http://hdl.handle.net/10251/84004.
Повний текст джерелаEsta tesis aborda problemas actuales en el análisis y diseño de componentes pasivos en las bandas de onda milimétrica y Terahercios (THz). Se presentan nuevas técnicas de análisis y modelado de estructuras complejas, procedimientos de diseño, e implementación práctica de dispositivos pasivos avanzados. La primera parte de la tesis se dedica a componentes pasivos de THz. Actualmente no se disponen de guías de onda adecuadas a THz debido a que ambos, metales y dieléctricos, introducen grandes pérdidas. En consecuencia, no es adecuado escalar las estructuras metálicas cerradas usadas en microondas, ni las guías dieléctricas usadas a frecuencias ópticas. Entre un gran número de recientes propuestas, la Single Wire Waveguide (SWW) destaca por su baja atenuación y casi nula dispersión. No obstante, como guía superficial, la SWW presenta difícil excitación y radiación en curvas. El uso de un recubrimiento dieléctrico, creando la Dielecric-Coated Single Wire Waveguide (DCSWW), alivia estos inconvenientes, pero las ventajas anteriores se pierden y nuevos problemas aparecen. Hasta la fecha, no se han encontrado soluciones adecuadas para la radiación en curvas de la SWW. Además, se echa en falta una caracterización rigurosa de ambas guías. Esta tesis presenta, por primera vez, un análisis modal completo de SWW y DCSWW, adecuado a la banda de THz. Este análisis es aplicado posteriormente para evitar el problema de la radiación en curvas. Se presentan y validan experimentalmente diversas estructuras y procedimientos de diseño. La segunda parte de la tesis abarca componentes pasivos de ondas milimétricas. Actualmente, estos componentes sufren una importante degradación de su respuesta debido a que resulta difícil asegurar contacto metálico y alineamiento adecuados para la operación a longitudes de onda tan pequeñas. Además, la absorción dieléctrica incrementa notablemente a estas frecuencias. En consecuencia, tanto guías metálicas huecas como líneas de transmisión planares convencionales presentan gran atenuación, siendo necesario considerar topologías alternativas. Las Gap Waveguides (GWs), basadas en una estructura periódica que introduce un efecto de Electromagnetic Bandgap, resultan muy adecuadas puesto que no requieren contacto entre partes metálicas y evitan las pérdidas en dieléctricos. No obstante, a pesar del potencial de las GWs, varias barreras impiden la consolidación y uso universal de esta tecnología. Por una parte, la compleja topología de las GWs dificulta el proceso de diseño dado que las simulaciones de onda completa consumen mucho tiempo y no existen actualmente métodos de análisis y diseño apropiados. Por otra parte, es necesario evidenciar el beneficio de usar GWs mediante dispositivos GW de altas prestaciones y comparativas adecuadas con estructuras convencionales. Esta tesis presenta diversos métodos de análisis eficientes, modelos, y técnicas de diseño que permitirán la síntesis de dispositivos GW sin necesidad de un conocimiento profundo de esta tecnología. Asimismo, se presentan varios filtros de banda estrecha operando en las bandas Ka y V con altas prestaciones, así como una comparativa rigurosa con la guía rectangular.
Aquesta tesi aborda problemes actuals en relació a l'anàlisi i disseny de components passius en les bandes d'ona mil·limètrica i Terahercis. Es presenten noves tècniques d'anàlisi i modelatge d'estructures complexes, procediments de disseny, i implementació pràctica de dispositius passius avançats. La primera part de la tesi es focalitza en components passius de THz. Actualment no es disposen de guies d'ona adequades a THz causa que tots dos, metalls i dielèctrics, introdueixen grans pèrdues. En conseqüència, no és adequat escalar les estructures metál·liques tancades usades en microones, ni les guies dielèctriques usades a freqüències òptiques. Entre un gran nombre de propostes recents, la Single Wire Waveguide (SWW) destaca per la seua baixa atenuació i quasi nul·la dispersió. No obstant això, com a guia superficial, la SWW presenta difícil excitació i radiació en corbes. L'ús d'un recobriment dielèctric, creant la Dielecric-Coated Single Wire Waveguide (DCSWW), alleuja aquests inconvenients, però els avantatges anteriors es perden i nous problemes apareixen. Fins a la data, no s'han trobat solucions adequades per a la radiació en corbes de la SWW. A més, es troba a faltar una caracterització rigorosa d'ambdues guies. Aquesta tesi presenta, per primera vegada, un anàlisi modal complet de SWW i DCSWW, adequat a la banda de THz. Aquest anàlisi és aplicat posteriorment per evitar el problema de la radiació en corbes. Es presenten i validen experimentalment diverses estructures i procediments de disseny. La segona part de la tesi es centra en components passius d'ones mil·limètriques. Actualment, aquests components pateixen una important degradació de la seua resposta a causa de que resulta difícil assegurar contacte metàl·lic i alineament adequats per a l'operació a longituds d'ona tan menudes. A més, l'absorció dielèctrica incrementa notablement a aquestes freqüències. En conseqüència, tant guies metàl·liques buides com línies de transmissió planars convencionals presenten gran atenuació, sent necessari considerar topologies alternatives. Les Gap Waveguides (GWs), basades en una estructura periòdica que introdueix un efecte de Electromagnetic Bandgap, resulten molt adequades ja que no requereixen contacte entre parts metàl·liques i eviten les pèrdues en dielèctrics. No obstant, tot i el potencial de les GWs, diverses barreres impedixen la consolidació i ús universal d'aquesta tecnologia. D'una banda, la complexa topologia de les GWs dificulta el procés de disseny atés que les simulacions d'ona completa consumeixen molt de temps i no existeixen actualment mètodes d'anàlisi i disseny apropiats. D'altra banda, és necessari evidenciar el benefici d'utilitzar GWs mitjançant dispositius GW d'altes prestacions i comparatives adequades amb estructures convencionals. Aquesta tesi presenta diversos mètodes d'anàlisi eficients, models, i tècniques de disseny que permetran la síntesi de dispositius GW sense necessitat d'un coneixement profund d'aquesta tecnologia. Així mateix, es presenten diversos filtres de banda estreta operant en les bandes Ka i V amb altes prestacions, així com una comparativa rigorosa amb la guia rectangular.
Berenguer Verdú, AJ. (2017). Analysis and design of efficient passive components for the millimeter-wave and THz bands [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/84004
TESIS
Yeh, Ka-Lo. "The generation of high field terahertz radiation and its application in terahertz nonlinear spectroscopy." Thesis, Massachusetts Institute of Technology, 2009. http://hdl.handle.net/1721.1/49748.
Повний текст джерелаIncludes bibliographical references (p. 147-155).
In this thesis research, I implemented a terahertz generation scheme that enables high-field near-single-cycle terahertz (THz) pulse generation via optical rectification in a LiNbO3 (LN) crystal. I also developed a method for the non reconfigurable generation of high-intensity multiple-cycle THz fields aimed to more efficiently deliver THz energy to resonant samples. A novel free-space THz-pump/THz-probe setup enabled time-resolved measurement of ultrafast nonlinear electronic responses in doped bulk semiconductor samples. The ability to spectrally and temporally resolve the response of the semiconductor sample using a THz probe allowed us to uncover both the dynamics of impact ionization and interesting phonon-plasma interactions in indium antimonide (InSb) for the first time. Nonlinear vibrational responses in LN were ob-served first in a dual THz beam setup on an integrated LN waveguide platform with optical probing to reveal the generation of terahertz second harmonic signals and also in THz transmission measurements in cooled LN where THz intensity-dependent self-phase modulation and harmonic generation were observed. An outlook and preliminary results toward implementation and observation of high-field THz-driven responses in ferroelectric materials are given in the final chapter of this thesis.
by Ka-Lo Yeh.
Ph.D.
Walker, Gillian Claire. "Modelling the propagation of terahertz radiation in biological tissue." Thesis, University of Leeds, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.406881.
Повний текст джерелаUngelenk, Peter [Verfasser], Shaukat [Akademischer Betreuer] Khan, and Anke-Susanne [Gutachter] Müller. "Generation and detection schemes for laser-induced coherent terahertz radiation at the electron storage ring DELTA / Peter Ungelenk. Betreuer: Shaukat Khan. Gutachter: Anke-Susanne Müller." Dortmund : Universitätsbibliothek Dortmund, 2015. http://d-nb.info/1111525439/34.
Повний текст джерелаSingh, Ram Kishor. "Laser plasma interaction and terahertz (THz) radiation." Thesis, 2016. http://localhost:8080/xmlui/handle/12345678/7136.
Повний текст джерелаTesař, Roman. "Type-II thin film superconductors studied by terahertz radiation." Doctoral thesis, 2018. http://www.nusl.cz/ntk/nusl-389003.
Повний текст джерелаHussain, Saba. "Nonlinear laser plasma intrection and terahertz(THz) radiation generation." Thesis, 2017. http://localhost:8080/xmlui/handle/12345678/7500.
Повний текст джерелаKumar, Subodh. "Terahertz (THz) radiation by high power laser plasma interaction." Thesis, 2017. http://localhost:8080/xmlui/handle/12345678/7315.
Повний текст джерелаMalik, Anil Kumar. "Plasma based terahertz (THz) radiation generation and its tunability." Thesis, 2012. http://localhost:8080/iit/handle/2074/4398.
Повний текст джерелаPANWAR, JYOTSNA. "THEORETICAL MODELING OF TERAHERTZ (THZ) RADIATION EMISSIONS FROM FREE ELECTRON LASER (FEL)." Thesis, 2018. http://dspace.dtu.ac.in:8080/jspui/handle/repository/16294.
Повний текст джерелаJameson, Andrew D. "Generating and using terahertz radiation to explore carrier dynamics of semiconductor and metal nanostructures." Thesis, 2012. http://hdl.handle.net/1957/27971.
Повний текст джерелаGraduation date: 2012
TOMARCHIO, LUCA. "Terahertz and optical response of novel quantum materials." Doctoral thesis, 2023. https://hdl.handle.net/11573/1667139.
Повний текст джерелаWimmer, Lara Simone. "THz streaking at metal nanotips." Doctoral thesis, 2018. http://hdl.handle.net/11858/00-1735-0000-002E-E393-0.
Повний текст джерелаYang, Monghuan, and 楊孟桓. "A comparative study of continuous-wave and pulsed terahertz radiation generated by oxygen ion-implanted and low-temperature-grown GaAs THz photoconductive antennas." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/29906094145417401027.
Повний текст джерела國立交通大學
光電工程系所
96
THz wave was generated from dipole antenna-type devices made by using oxygen-ion implanted GaAs (GaAs:O) and low-temperature-grown GaAs (LT-GaAs). We compared the emission properties of LT-GaAs photoconductive (PC) antennas with GaAs:O fabricated condition (2.5 X 10^13 ions/cm^2 (500 keV & 800 keV ), 4 X 10^13 ions/cm^2(1200 keV ) in the pulse and CW mode. The absolute power of THz wave was also measured by a bolometer for comparison of the relative radiation power. Compared GaAs:O with LT-GaAs at same structure of PC antennas. The material GaAs:O can generate higher THz power than LT-GaAs both in pulsed mode and CW mode. The THz power of GaAs:O (2.27uW) is higher than that of LT-GaAs(1.27uW) in CW mode, and in pulse mode, the THz peak amplitude of GaAs:O (5.2mW) is higher than that of LT-GaAs (3.6mW). The bandwidth of GaAs:O and LT-GaAs are measured about 1THz both under pulse (TDS) and CW (photomixing) pumping. However, the THz power of LT-GaAs is saturated on CW mode, while GaAs:O doesn’t. The result shows that GaAs:O is a proper THz emitter compare with LT-GaAs which is hardly to reproduce.
Jafari, Salim Amir. "Superconducting Nanostructures for Quantum Detection of Electromagnetic Radiation." Thesis, 2014. http://hdl.handle.net/10012/8431.
Повний текст джерелаLin, Hui-Ching, and 林輝慶. "The Generation and Detection of Terahertz Radiation." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/56563434556994286275.
Повний текст джерела國立成功大學
物理學系碩博士班
91
Terahertz (THz) radiation (THz waves), electromagnetic radiation in a frequency interval from 0.1 to 30 THz, is the next frontier in imaging science and technology. THz waves, or T-rays, occupy a large portion of the electromagnetic spectrum between the infrared and microwave bands. However, compared to relatively well-developed medical imaging at microwaves and optical frequencies, basic research, new initiatives and advanced technological developments in the THz band are very limited. In this thesis, we present the details of our work which has successfully set up a system to generate and detect the terahertz waves. Photoconductive technique is used for radiation generation while electro-optical sampling is employed in the radiation detection. Electro-optical crystal ZnTe is used as the radiation sensor while GaAs wafer and various semiconductor surface intrinsic-N+ (SIN+) microstructures are used as the radiation emitters. The dependences of the intensities and frequency ranges of the THz waves, radiated from InP SIN+ structures, on the built-in electric field, top layer thickness of the structures and pumping power density are investigated. Ti: Sapphire pulse laser with 80 femtosecond (fs) pulse width is used to pump and probe the THz radiation. Since the radiation power and spectrum are also strong related to the pulse width (80 femtosecond), an autocorrelator is also set up to monitor the pulse width of the laser pulse width.
Smith, Robert Levi. "Terahertz Field Enhancement by Optimized Coupling and Adiabatic Tapering." Thesis, 2014. http://hdl.handle.net/1828/5671.
Повний текст джерелаGraduate
0544
0607
0756
levismith3@hotmail.com
Chang, Liang-Sun, and 張良森. "Studies of the Saturation Mechanism in Terahertz Radiation by Varying Pump Beam Intensity." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/34575356696925104980.
Повний текст джерела國立成功大學
物理學系碩博士班
94
The terahertz (THz) radiation is the electromagnetic wave with frequency between 0.1THz to 10THz. In this thesis, we employ the photoconductive mode and the free-space electro-optical sampling to generate and detect the terahertz radiations. Terahertz radiation from InAlAs SIN+ and InAlAs SIP+ hetrostructures and InAs wafer are measured at different pump power. The critical electric field, stored energy and optical absorption saturation in the emitters have played important roles in the amplitude of terahertz radiation. The decrease of terahertz radiation under the high pump power involves various radiation mechanisms. Finally, the enhancement of terahertz radiation by conjugate polymers (DB-PPV) deposited on n-doped GaAs wafer is observed and discussed.
Lin, Sung-Hui, and 林松輝. "The Study of Terahertz Radiation Mechanism from Photoconductive Antenna by Femtosecond Pulse Shaping Technology." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/24774906421031645008.
Повний текст джерела國立交通大學
光電工程系所
96
In this thesis, role of chirp properties within mode locked pulses to generate efficiency and broadband THz radiation is investigated. By integration of pulse shaping technique and pump-probe measurement, behavior of increasing carrier relaxation time with chirp and positive sign is observed and explained by frequency dependent excess energy. Meanwhile, chirp- and power- dependence of THz radiation are studied using chirp controlled PC antenna based THz radiation system. We confirm the nature of asymmetry and positive preference of THz radiation for mode locked chirp pulse. We further observe an anomalous and nonlinear increase of THz radiation with increasing power of transform-limited and tight focusing exciting pulse. This could be due to distribution of carries from two photon absorption and is the first experimental report of two photon absorption induced THz radiation enhancement which have been predicted theoretically. In addition, we analyze phenomenon observed by Drude-Lorentz model with obtained chirp- and power- dependent carrier lifetime and influence of chirp within sampling. Finally, we suggest possible approaches for generating high efficiency and broadband THz radiation:(1) positive chirp exciting can enhance radiation power but depress the high frequency part. (2) transform-limited exciting pulse can provide broader spectrum and further enhance power under highly tight focusing condition due to TPA contribution. (3) antenna with short carrier and momentum lifetime exciting by transform-limited pulse to decrease influence of PC sampling.
Park, Icksoon. "Investigations of the generation of tunable continuous-wave terahertz radiation and its spectroscopic applications." Phd thesis, 2007. https://tuprints.ulb.tu-darmstadt.de/871/1/Park_Dissertation.pdf.
Повний текст джерелаChang, Chin-Kuo, and 張晉國. "Mechanism of Terahertz Radiation and the Critical Electric Field of GaAs SIN+ Structures of Photoconductive Semiconductors." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/28460199399451786008.
Повний текст джерела國立成功大學
光電科學與工程研究所
94
Abstract Terahertz (THz) radiation can be generated from a variety of semiconductors illuminated by femtosecond optical pulses. It is widely believed that three different mechanisms result in THz radiation from surface of bulk semiconductors, i.e. the photoconductivity, the photo-Dember effect, and the optical rectification. In this thesis, we use free space electro-optic sampling (FS-EOS) to characterize the THz radiation from a series of GaAs surface intrinsic-N+ (SIN+) structures. By THz time-domain spectroscopic technique we directly measure the electric field of the THz radiation. In addition, the radiation mechanism of the sample under the experiment condition is identified as the photoconductivity. In the photoconductive process, the THz radiation from semiconductor surface is a consequence of the motion of photo-excited carriers accelerated by the local or bias field which may be an external applied field or an internal field from charge depletion layers, Schottkey barriers, strained layers, and p-n junctions of semiconductors. The modulation spectroscopy of photoreflectance (PR) is used to measure the surface electric field of a series of GaAs SIN+ structures with various intrinsic layers, followed immediately by the measurement of the electric field amplitude of the THz radiation. Experimental results indicate that as the surface field is lower than the so called “critical electric field”, the amplitude of THz radiation field is proportional to the product of the surface field and the number of photo-excited carriers. As the surface field exceeds the critical field, the amplitude is independent of the surface field but is proportional to the product of the critical field and the number of the photo-excited carriers. The critical field corresponds to the field at which the drift velocity is maxima in semiconductor and depends on the energy difference between the Γ to L valley of the semiconductor.
Park, Icksoon [Verfasser]. "Investigations of the generation of tunable continuous-wave terahertz radiation and its spectroscopic applications / von Icksoon Park." 2007. http://d-nb.info/985732679/34.
Повний текст джерелаLin, Hui-Ching, and 林輝慶. "The Influence of Critical Electric Field、Conjugate Polymer and Saturation Effect on Terahertz Radiation from Semiconductor Microstructure." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/72519901949616262480.
Повний текст джерела國立成功大學
物理學系碩博士班
95
Terahertz radiation (THz) represents the electromagnetic waves with frequencies around 1012 Hz. In comparison with other electromagnetic waves, the characteristics of terahertz radiation have not been clearly understood and very few scientific research and practical applications have been reported. Therefore, the generation, detection, application and mechanism of terahertz radiation have become important area of studies. In this thesis we first introduce the generation and detection system and studies of the mechanism of terahertz radiation. The effects of critical electric field, conjugate polymer (DB-PPV) and saturation effect on the intensity of terahertz radiation radiated from semiconductor microstructures will also be reported. It is widely believed that, in photoconductive mode, intensity of terahertz radiation is proportional to local field (bias) by the external applied or built-in electric field. However, when GaAs surface intrinsic-N+ (SIN+) structures are used as the terahertz emitter, the larger the bias electric field, the smaller the terahertz radiation intensity is observed. There exists the so-called “the critical electric field” in semiconductors. As the local field is below the critical electric field Ec, the maximum drift velocity of free charged photo-excited carriers in a semiconductor is proportional to the electric field in the semiconductor. However, as the field rises above the critical electric field Ec, the maximum drift velocity declines slightly as the field increases. The maximum drift velocity of the free charged carriers peaks at the critical electric field, which depends on the energy difference between the Γ to L valley (intervalley threshold, L valley offset) in the semiconductor. While the intrinsic layer thickness is less than 200 nm, the electric field of GaAs is larger than the critical field thus the drift velocity is approximately constant. The amplitude of THz radiation above the critical electric field Ec is not proportional to nphEloc but proportional to nphEc. An effective electric field Eeff can be defined, which equals to the critical field Ec as the Eloc is larger than the critical field and equals to Eloc as the Eloc is smaller than the critical field. Then, the terahertz radiation intensity can be expressed by . The dependence of THz and nphEeff on the thickness of the intrinsic layer obtained experimentally are almost identical to each other implying that there is indeed a critical electric field, Ec , in the semiconductor such that ETHz is dependent on Eloc when Eloc is smaller than Ec and is independent of Eloc when Eloc exceeds Ec. As the field is lower than the critical field, the amplitude is proportional to the product of the surface field and the number of photo-excited carriers. In the high field limit where the surface field exceeds the critical field, the amplitude of THz is independent of the surface field but is proportional to the product of the critical field and the number of the photo-excited carriers. Since the critical electric field depends on the energy difference between Γ and L valley or the L valley offset in semiconductors. The L valley offset can be estimated from critical electric field determined from THz radiation. In the second part of this study, THz radiation from the surfaces of various semiconductor wafers and microstructures is investigated. Various polymer films are spin-cast on the surfaces of semiconductors and semiconductor heterostructures to enhance the terahertz radiation. The conjugate polymer (2, 3- dibutoxy-1, 4-polyphenylenevinylene (DB-PPV)) is found to effectively enhance the terahertz radiation intensity from the surface intrinsic GaAs wafer by as much as 50%. Changes in surface field and the density of interfacial states are detected associated with the enhancement of THz radiation by DB-PPV conjugate polymer surface-coating. For the semiconductors in which drift current dominates the diffusion current, THz radiation is enhanced by coating DB-PPV on their surfaces to increase their surface fields. For the semiconductors in which the diffusion current dominates the drift current, THz radiation is not enhanced by increasing in surface fields. The contactless and nondestructive modulation spectroscopy of photoreflectance is employed to determine the changes in surface field and the density of interfacial states which are closely related to the enhancement of THz radiation. Finally, we study the dependence of intensity of terahertz radiation on pump beam power in InAlAs SIN+ samples with different doping concentrations in the buffer layer. The intensity of terahertz radiation increases linearly with the pump power; reaches its saturation intensity; and declines slightly in the high power region. It is found that the intensity of the terahertz radiation is restricted by the critical electric field and the energy stored in the semiconductors, which depends on the surface field within the surface intrinsic layer. The variation in the THz intensity with pump power can be attributed to the change in the mobility of the photo-excited charged carriers.
Gong, Yan-Zhang, and 龔彥彰. "Theoretical Simulation of the Generation and Detection of the Terahertz Radiation in an Optical Rectification and E-O Sampling System." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/75136812523319809875.
Повний текст джерела