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Статті в журналах з теми "TEM ANALYSIS"

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Автор: Grafiati

Опубліковано: 11 вересня 2023

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1

Du, Z. W., A. S. Liu, B. L. Shao, Z. Y. Zhang, X. S. Zhang, and Z. M. Sun. "TEM analysis of Gd5Si1.85Ge2.15 alloy." Materials Characterization 59, no. 9 (September 2008): 1241–44. http://dx.doi.org/10.1016/j.matchar.2007.10.005.

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2

Rajan, Krishna, and Peter Sewell. "Surface Analysis in the TEM." JOM 38, no. 10 (October 1986): 34–35. http://dx.doi.org/10.1007/bf03258578.

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3

Mizunaga, Hideki, and Toshiaki Tanaka. "Development of Temtool for TEM analysis." BUTSURI-TANSA(Geophysical Exploration) 67, no. 2 (2014): 135–42. http://dx.doi.org/10.3124/segj.67.135.

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4

Okamoto, Tatsuki, Masaki Kanegami, and Naohiro Hozumi. "TEM Analysis of Polyethylene with EELS." IEEJ Transactions on Fundamentals and Materials 118, no. 7-8 (1998): 767–72. http://dx.doi.org/10.1541/ieejfms1990.118.7-8_767.

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5

HIROSE, Yukinori, and Koji FUKUMOTO. "Evaluation and Analysis Technique Using TEM." Journal of the Surface Finishing Society of Japan 54, no. 1 (2003): 21–25. http://dx.doi.org/10.4139/sfj.54.21.

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6

Stöger-Pollach, M., A. Steiger-Thirsfeld, and S. Schwarz. "Low voltage TEM for semiconductor analysis." Journal of Physics: Conference Series 326 (November 9, 2011): 012027. http://dx.doi.org/10.1088/1742-6596/326/1/012027.

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7

Rowlands, Neil, and Simon Burgess. "Energy dispersive analysis in the TEM." Materials Today 12 (2010): 46–48. http://dx.doi.org/10.1016/s1369-7021(10)70145-0.

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8

Dahmen, U., N. Thangaraj, and R. Kilaas. "Quantitative TEM analysis of microstructural anisotropy." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 682–83. http://dx.doi.org/10.1017/s0424820100171146.

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Анотація:

Preferred orientation of grain boundaries or interfaces in solids is an important indicator of anisotropy in boundary energy or kinetics. The present study is part of an ongoing investigation of faceting in thin films with the mazed bicrystal microstructure which possesses several unique features that are difficult to measure with standard parameters such as grain size distribution. One of the important characteristics of this microstructure is the degree and type of anisotropy. Figure 1 shows a micrograph with a typical mazed bicrystal microstructure. Only two grain orientations with about equal volume fraction are seen in black and white contrast, respectively. It is apparent that unlike a normal polycrystalline thin film, individual grains in this microstructure have unusual convoluted shapes with both concave and convex regions.The standard stereological method to measure microstructural anisotropy is the rose plot generated from a count of intersections with a reference grid overlaid on the micrograph at different angles.

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9

Bauer, Natalie, Jyoti Rai, Hairu Chen, Lillianne Harris, Lalita Shevde, Tim Moore, and Judy King. "Microparticles/Exosomes: Isolation and TEM Analysis." Microscopy Today 17, no. 2 (March 2009): 42–45. http://dx.doi.org/10.1017/s1551929500054493.

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Microparticles and exosomes are small vesicular fragments of cell membrane which are released from activated and apoptotic cells. Microparticles (MPs) range in size from 0.5-1.5 μm, and exosomes are 0.5 μm and under. For the purposes of this article we will refer to both categories as microparticles. They differ from apoptotic bodies based on their smaller size, intact structure, and lack of degraded nuclear material. MPs have been shown to be released from a variety of cell types including platelets, endothelium, vascular smooth muscle cells, dendritic cells, and tumor cells. Jimenez and others have shown that based on the stimulus and cell type the MPs released are both quantitatively and phenotypically distinct. More recent data have shown the proteomics of MPs released from human umbilical vein endothelial cells differ dependent on whether they are stimulated with PAI or TNF-α.

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10

Neumann, Wolfgang, Holm Kirmse, Ines Häusler, Reinhard Otto, and Irmela Hähnert. "Quantitative TEM analysis of quantum structures." Journal of Alloys and Compounds 382, no. 1-2 (November 2004): 2–9. http://dx.doi.org/10.1016/j.jallcom.2004.05.066.

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11

Cho, Yong-Heui. "Dispersion Analysis for Rectangular Coaxial Line and TEM Cell." Journal of the Korea Contents Association 7, no. 1 (January 28, 2007): 124–30. http://dx.doi.org/10.5392/jkca.2007.7.1.124.

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12

Li, Xiaoguang, and Yangmei Li. "Error Analysis of TEM-4 Dictation and Teaching Suggestions to TEM-4 Dictation." Open Journal of Social Sciences 04, no. 11 (2016): 187–93. http://dx.doi.org/10.4236/jss.2016.411015.

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13

Balzuweit, Karla, Thais MIlagres, Von Braun Nascimento, Vagner de Carvalho, Edmar Soares, and Luiz Ladeira. "LEED and TEM analysis of Bismuth Telluride." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C194. http://dx.doi.org/10.1107/s2053273314098052.

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Анотація:

Bismuth Telluride has recently been identified as a 3D-topological insulator [1] as well as Graphene [2]. Topological insulators are a quite recent discovered quantum mechanics characteristic of materials where essentially the surface band structure is completely different from the bulk. Bismuth Telluride, for example has its semi-metallic behavior changed into a conducting one. However it has been well known, as an excellent thermoelectric material [3]; with relatively high thermoelectric coefficients at room temperature. Bismuth Telluride is a relatively easy material to obtain and different compositions are being studied both as bulk material and as thin films. Crystals of Bi2Te3 were Bridgman grown in a sealed quartz ampoule in a directional resistance oven at a temperature of 600oC. Conventional X-ray Laue diffraction showed patterns compatible with a single crystal along the sample except for the starting point, which was discarded. Transmission and Scanning Electron Microscopy and Low Energy Electron Diffraction (LEED) were performed. The grown crystals were cleaved and small parts were crushed on a mortar with ethanol and deposited onto a holey carbon grid. Also thin slices were cut in an ultramicrotome (Leica UC6) with a diamond knife and deposited onto a holey carbon coated grid. TEM measurements showed the presence of grains on both samples with a very small deviation from the observed crystallographic axis (0001). However LEED measurements showed only a single crystalline pattern. Electron backscatter diffraction (EBSD) studies showed large granular areas with a extremely small angular variation between the grains. It is still unclear if those differences are real or due to sample preparation artifacts and effort is being put into analyzing exactly the same piece with all the different techniques.

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14

Komoto, Tadashi. "TEM Analysis of Tribology of Polymeric Materials." Kobunshi 43, no. 2 (1994): 104–5. http://dx.doi.org/10.1295/kobunshi.43.104.

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15

Efimova, N. A., V. A. Kaloshin, and E. A. Skorodumova. "Analysis of a horn-lens TEM antenna." Journal of Communications Technology and Electronics 57, no. 9 (September 2012): 1031–38. http://dx.doi.org/10.1134/s1064226912090045.

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16

Li, Huafang, Parag Banerjee, and Kathy Flores. "Understanding EDXS Analysis of Nanostructures in TEM." Microscopy and Microanalysis 23, S1 (July 2017): 1086–87. http://dx.doi.org/10.1017/s1431927617006092.

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17

Rossouw, D., T. Mirkovic, GD Scholes, and GA Botton. "TEM Analysis of EuS/CdSe Nano Heterostructures." Microscopy and Microanalysis 16, S2 (July 2010): 1292–93. http://dx.doi.org/10.1017/s1431927610062951.

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18

Hangas, J., and A. D. Roche. "TEM Analysis of a Thermal Sprayed Steel." Microscopy and Microanalysis 8, S02 (August 2002): 1276–77. http://dx.doi.org/10.1017/s1431927602104818.

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19

Lingle, Wilma L., Ronald P. Clay, and David Porter. "TEM analysis of basidiosporogenesis in Panellus stypticus." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 1 (August 1992): 874–75. http://dx.doi.org/10.1017/s042482010012477x.

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Анотація:

Panellus stypticus is a white-rot basidiomycete of world-wide distribution. The 0.5 cm to 2.5 cm diameter gilled basidiocarps are evident from late summer through winter, usually on dead hardwood limbs. Basidiocarps can revive from desiccation when moistened, often generating more basidiospores. Basidiospores are thin-walled, hyaline and amyloid (i.e., they stain with Melzer’s iodine solution). In the present study the ultrastructure of events in basidiosporogenesis in P. stypticus was investigated using transmission electron microscopy (TEM). Conventional fixation (CF), using aqueous-based fixatives, and plunge freezing followed by freeze substitution (FS) fixation procedures were employed. Gold-tagged wheat germ agglutinin (WGA), Riccinis communis agglutinin (RcA) and α-amylase were used to investigate the composition of cytoplasmic and extra-cytoplasmic polysaccharides and cell walls, and to localize polysaccharides which may be involved in the ability to revive from desiccation.

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20

Shaffer, O. L., M. S. El-Aasser, and J. W. Vanderhoff. "TEM analysis of core/shell latex morphology." Proceedings, annual meeting, Electron Microscopy Society of America 45 (August 1987): 502–3. http://dx.doi.org/10.1017/s0424820100127153.

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Анотація:

Transmission electron microscopy is an excellent method to study particle size and particle morphology of latexes. Special sample techniques are utilized in the study of latexes and often more than one technique is needed to answer questions concerning the structure of the particle. If the latex is of a core/shell type the study becomes more complex. Sample preparation for studying latexes include staining with osmium tetroxide to crosslink and stain unsaturated polymers, cold stage if the latex is too soft to examine at room temperature, negative staining to increase contrast shadowing to determine the sag of the particle at room temperature, ultramicrotoming, cryoultramicrotoming or a combination of techniques such as staining and cold stage.The latex investigated was the first stage seed latex of poly (butylacrylate - butadiene) and the final latex a core-shell of poly(butylacrylate - butadiene)/poly(methyl methacrylate). Because of its unsaturation, poly(butadiene) can be preferentially stained with osmium tetroxide.

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21

Cole, M. W., J. F. Harvey, R. A. Lux, and D. W. Eckart. "TEM analysis of light emitting porous silicon." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1398–99. http://dx.doi.org/10.1017/s0424820100131620.

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The recent observations of visible light emission from porous silicon layers (PSL) have attracted much interest due to its potential applications in silicon based optoelectronic integrated circuits, optical memories and advanced display systems. To realize these potential applications this material must be fully characterized. Specifically, the microstructure must be studied in order to understand the origin of the light emission. Unfortunately, the issue of the detailed geometry of porous silicon is not fully resolved because of the difficulty in performing transmission electron microscopy (TEM) measurements on these fragile structures. One of the first microstructural studies on visible emitting PSL, presented by Cullis and Canham, showed the material to be composed of needle-like structures having a cross sectional diameter of 3nm. It was suggested that the visible luminescence in this material is due to quantum confinement of these small structures. A major limitation of this work was the method of TEM sample preparation.

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22

Rozeveld, S., DA Blom, LF Allard, T. Richardson, C. Todd, and JH Blackson. "Analysis of Catalysts using Aberration-Corrected TEM." Microscopy and Microanalysis 14, S2 (August 2008): 1390–91. http://dx.doi.org/10.1017/s1431927608085887.

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23

KC, Bilash, Jinglong Guo, Robert Klie, D. Bruce Buchholz, Guennadi Evmenenko, Jae Jin Kim, Timothy Fister, and Brian Ingram. "TEM Analysis of Multivalent Ion Battery Cathode." Microscopy and Microanalysis 26, S2 (July 30, 2020): 3170–72. http://dx.doi.org/10.1017/s1431927620024058.

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24

Li, X., J. Xingxing, W. Zi-qin, R. J. Lee, G. R. Dunmyre, and K. L. Anderson. "Thin film standardless analysis used in TEM asbestos EDS analysis." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 966–67. http://dx.doi.org/10.1017/s0424820100106892.

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A thin film standardless analysis method, based on the Cliff-Loriner factor k, has been used to do quantitative x-ray analysis of asbestos fibers in the TEM. The results of the analysis of four minerals at 120 keV were close to the theoretical value. The ionization cross section Q has been revised experimentally to improve the analysis of asbestos.The Cliff-Lorimer factor has been used in TEM thin film analysis since 1975. The factor kAB is used in the following equation:CA/CB = kAB IA/IBwhere CA and CB is the weight percent of the elements A and B. The IA and IB are x-ray intensities corresponding to elements A and B. In this paper the calculated k values2 will be used for standardless quantitative analysis.In the thin film, when the effects of the backscattering electron, x-ray absorption, and secondary fluorescence are not considered, the x-ray intensity iswhere pt is the mass depth AA is the atomic weight of element A, W is the fluorescence yield, L is the ratio of the x-ray lines and T is the detector efficiency.

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25

Hlavenková, Zuzana, Dimple Karia, Miloš Malínský, Daniel Němeček, Fanis Grollios, Vojtěch Doležal, Ondřej Sháněl, et al. "Thermo Scientific™ Tundra Cryo-TEM: 100kV Cryo-TEM dedicated for Single Particle Analysis." Microscopy and Microanalysis 27, S1 (July 30, 2021): 1330–32. http://dx.doi.org/10.1017/s1431927621004967.

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26

Yoon, Byungun, and Yongtae Park. "Development of New Technology Forecasting Algorithm: Hybrid Approach for Morphology Analysis and Conjoint Analysis of Patent Information." IEEE Transactions on Engineering Management 54, no. 3 (August 2007): 588–99. http://dx.doi.org/10.1109/tem.2007.900796.

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27

Arlet, Guillaume, Sylvie Goussard, Patrice Courvalin та Alain Philippon. "Sequences of the Genes for the TEM-20, TEM-21, TEM-22, and TEM-29 Extended-Spectrum β-Lactamases". Antimicrobial Agents and Chemotherapy 43, № 4 (1 квітня 1999): 969–71. http://dx.doi.org/10.1128/aac.43.4.969.

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Анотація:

ABSTRACT The sequences of the bla TEM genes encoding TEM-20, TEM-21, TEM-22, and TEM-29 extended-spectrum β-lactamases were determined. Analysis of the deduced amino acid sequences indicated that TEM-20 and TEM-29 were derived from TEM-1 and that TEM-21 and TEM-22 were derived from TEM-2. The substitutions involved were Ser-238 and Thr-182 for TEM-20; His-164 for TEM-29; Lys-104, Arg-153, and Ser-238 for TEM-21; and Lys-104, Gly-237, and Ser-238 for TEM-22. The promoter region of the bla TEM-22 gene was identical to that of bla TEM-3. High-level production of TEM-20 could result from a 135-bp deletion which combined the −35 region of the Pa promoter with the −10 region of the P3 promoter and a G→T transition in the latter motif.

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28

Booker, Jane M., and Maurice C. Bryson. "Decision analysis in project management: An overview." IEEE Transactions on Engineering Management EM-32, no. 1 (1985): 3–9. http://dx.doi.org/10.1109/tem.1985.6447630.

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29

Liberatore, Matthew J. "Critical Path Analysis With Fuzzy Activity Times." IEEE Transactions on Engineering Management 55, no. 2 (May 2008): 329–37. http://dx.doi.org/10.1109/tem.2008.919678.

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30

Lerch, Martin, and Patrick Spieth. "Innovation Project Portfolio Management: A Qualitative Analysis." IEEE Transactions on Engineering Management 60, no. 1 (February 2013): 18–29. http://dx.doi.org/10.1109/tem.2012.2201723.

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31

Chipulu, Maxwell, Jun Guan Neoh, Udechukwu Ojiako, and Terry Williams. "A Multidimensional Analysis of Project Manager Competences." IEEE Transactions on Engineering Management 60, no. 3 (August 2013): 506–17. http://dx.doi.org/10.1109/tem.2012.2215330.

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32

Dhir, Krishna S. "Formulating management policies for value engineering/value analysis." IEEE Transactions on Engineering Management EM-34, no. 3 (August 1987): 161–71. http://dx.doi.org/10.1109/tem.1987.6498877.

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33

Abbas, A. E. "Entropy methods for joint distributions in decision analysis." IEEE Transactions on Engineering Management 53, no. 1 (February 2006): 146–59. http://dx.doi.org/10.1109/tem.2005.861803.

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34

Basole, Rahul C., Hyunwoo Park, and Raul O. Chao. "Visual Analysis of Venture Similarity in Entrepreneurial Ecosystems." IEEE Transactions on Engineering Management 66, no. 4 (November 2019): 568–82. http://dx.doi.org/10.1109/tem.2018.2855435.

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35

Tomiya, Shigetaka. "TEM Analysis of Degraded ZnCdSe Quantum Well Strructures." Materia Japan 40, no. 12 (2001): 1002. http://dx.doi.org/10.2320/materia.40.1002.

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36

Goyal, Garima. "Analysis of Alignment of TEM Image using ECC." IOSR Journal of Computer Engineering 16, no. 3 (2014): 112–15. http://dx.doi.org/10.9790/0661-1633112115.

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37

Guo, Wen-Bo, Guo-Qiang Xue, Xiu Li, and Yin-Ai Liu. "Correlation analysis and imaging technique of TEM data." Exploration Geophysics 43, no. 3 (September 2012): 137–48. http://dx.doi.org/10.1071/eg11034.

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38

Song, Xiangyun, Yanbao Fu, Chengyu Song, and Vincent Battaglia. "TEM failure analysis of electrochemically delithiated LiNi0.5Mn1.5O4 spinel." MRS Advances 5, no. 27-28 (2020): 1405–13. http://dx.doi.org/10.1557/adv.2020.105.

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Анотація:

AbstractLiNi0.5Mn1.5O4 cathode material, which has a higher working voltage (4.7 v) than NCM and a moderate specific capacity (148 mAh/g theoretical), has been studied to understand the source of capacity fade during the first 100 cycles in a half cell. The work mainly consisted of high resolution TEM observations and analysis of the surface microstructural properties, before and after cycling. We found that the pristine material consisted almost entirely of large FCC spinal domains but with cycling appears small simple cubic spinel domains at the surface. It is proposed that these small changes of the surface microstructure leads to impedance rise that results in the premature arrival to the upper cutoff voltage of 4.85V during charging and the subsequent loss of capacity with cycling.

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39

Moreaud, Maxime, Renaud Revel, Dominique Jeulin, and Vincent Morard. "SIZE OF BOEHMITE NANOPARTICLES BY TEM IMAGES ANALYSIS." Image Analysis & Stereology 28, no. 3 (May 3, 2011): 187. http://dx.doi.org/10.5566/ias.v28.p187-193.

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Transition aluminas, and especially the gamma type, are largely used as catalyst supports in refining and petrochemicals. Most studies focus on properties resulting from material texture and casting (specific surface, porous volume, pore shape and diameter). However, surface properties of alumina should be considered as well, as the catalytic activity is tightly related to the structure of exposed crystalline faces. As γ alumina results from controlled thermal treatment of boehmite γ-AlOOH by a topotactic transformation, the nature of exposed crystalline planes is related to the starting material. Therefore, the synthesis of the oxihydroxide γ-AlOOH, and especially size and shape of these particles, is critical in determining the relevant surface properties. Unlike often aggregated alumina, boehmite nanoparticles can be observed by TEM. Analysis of these TEM images can be performed to estimate the size of the boehmite nanoparticles. Information about morphology of the nanoparticles is obtained by the analysis of the covariance, modeling micrographs by a dilution model.

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40

Reyes-Gasga, José, and Nancy Vargas-Becerril. "TEM Phase Transitions Analysis in Human Tooth Enamel." Microscopy and Microanalysis 26, S1 (March 2020): 169–70. http://dx.doi.org/10.1017/s1431927620001063.

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41

Falke, M., A. Kaeppel, S. Scheller, W. Hahn, R. Terborg, M. Rohde, Q. Ramasse, et al. "SDD-EDS: Element Analysis of Nanostructures in TEM." Microscopy and Microanalysis 18, S2 (July 2012): 1058–59. http://dx.doi.org/10.1017/s1431927612007143.

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42

Lewis, Nathan, Krishna Shenai, and Ernest L. Hall. "TEM analysis of TiSi2 on Si and polysilicon." Proceedings, annual meeting, Electron Microscopy Society of America 46 (1988): 886–87. http://dx.doi.org/10.1017/s0424820100106491.

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Анотація:

TiSi2, when deposited on poly-Si and Si, exhibits very low sheet resistance ana can be easily integrated into existing device and IC fabrication environments. However, the high temperature process stability of TiSi2 is rather limited. The silicide must be able to withstand processing temperatures in the 800°C-1000°C range for the fabrication of many high voltage devices and integrated circuits. In the present investigation the high temperature stability of the TiSi2 structures were examined using TEH on both planar and cross-sectional specimens.The starting materials in this study were <100> Si substrates doped with 1x1016 cm-3 boron. The gate SiO2 was grown and then the poly-Si deposited on the substrate followed by TiSi2 formation on the poly-Si, creating an actual MOS structure used for device fabrication. The TiSi2 was formed by rf sputtering of Ti followed by either a two-step thermal or rapid thermal anneal (RTA) to form the silicide.

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43

Brennan, M., Masaru Kuno, and S. Rouvimov. "TEM Analysis of CsPbBr3 Nanocrystals: Challenges and Perspectives." Microscopy and Microanalysis 23, S1 (July 2017): 2096–97. http://dx.doi.org/10.1017/s143192761701114x.

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44

Park, S., NT Nuhfer, DE Laughlin, and J.-G. Zhu. "Complementary Analytical TEM Analysis of Perpendicular Recording Media." Microscopy and Microanalysis 15, S2 (July 2009): 1318–19. http://dx.doi.org/10.1017/s1431927609096871.

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45

Geiss, RH, E. Mansfield, and JA Fagan. "Methods for TEM Analysis of NIST’s SWCNT SRM." Microscopy and Microanalysis 16, S2 (July 2010): 1792–93. http://dx.doi.org/10.1017/s1431927610062331.

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46

Buttry, R. W., C. R. Hills, G. C. Nelson, and T. Tribble. "Auger and TEM analysis of multilayer IC contacts." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 818–19. http://dx.doi.org/10.1017/s0424820100171821.

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Анотація:

With the continued shrinkage of the dimensions (both laterally and in depth) of integrated circuits (IC), knowledge of the interactions that occur over nanometer scale distances becomes increasingly important. This requirement has pushed the capabilities of the tools used to analyze these structuresto their maximum. Two techniques which are frequently used to analyze thin layer structures are AugerElectron Spectroscopy (AES) and Transmission Electron Microscopy (TEM).AES combined with ion beam sputtering is used to measure the elemental composition as a function of sputter time. With suitable calibration, the sputter time scale can be converted to a depth scale. Theprofiles can also be used to study the interfacial reactions for thin layers. TEM is frequently used to accurately measure layer thicknesses and the layer elemental constituents can be identified byEnergy Dispersive Spectroscopy (EDS). When the layer thicknesses approach a few tens of A there are problems associated with interpreting the data from both of these techniques, particularly the data obtained near the interfaces.

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47

Scheerschmidt, Kurt, and Volker Kuhlmann. "Nanostructures simulated by molecular dynamics for TEM analysis." Microscopy and Microanalysis 9, S03 (September 2003): 232–33. http://dx.doi.org/10.1017/s1431927603022268.

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48

Martinez, L., J. M. Briceño-Valero, S. A. López-Rivera, K. Moore, and J. T. Thorthon. "Micropattern analysis of ZnIn2S4 using AFM and TEM." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 476–77. http://dx.doi.org/10.1017/s0424820100138750.

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Анотація:

Semiconductor ZnIn2S4 is the only member of the II-III2-IV4 family with layer structure. The crystal structure of this semiconductor reported by Lappe et. al. is based upon closed packing of sulfur atoms with octahedral and tetrahedral indium atoms and tetrahedral zinc atoms. Previous studies on this material with high resolution transmission electron microscopy and Ramman spectroscopy demonstrate the existence of challenging problems to be resolved related to its intrinsic nature. There is great interest in this material for possible non-linear optical applications. In the present study Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) have been utilized to reveal crystallographic aspects of this material.Yellowish, plate-shaped, single crystals of ZnIn2S4 were prepared with the chemical transport method using iodine as a transporting agent. Specimens suitable for electron microscope analysis in the growth direction were prepared by peeling off layers with a piece of tape. For AFM analysis, freshly cleaved surfaces were used.

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49

Olivier, E. J., та J. H. Neethling. "TEM analysis of planar defects in β-SiC". International Journal of Refractory Metals and Hard Materials 27, № 2 (березень 2009): 443–48. http://dx.doi.org/10.1016/j.ijrmhm.2008.09.013.

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SHIMIZU, Yuko, Takao SHINKAWA, Miyuki TSUDA, Yoshikazu SASAKI, and Munetaka Nakata. "Analysis of TEM Images Using Akaike's Information Criterion." Hyomen Kagaku 33, no. 4 (2012): 242–46. http://dx.doi.org/10.1380/jsssj.33.242.

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