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Статті в журналах з теми "TCAD TOOL"

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Lee, YongJae. "Simulations of Proposed Shallow Trench Isolation using TCAD Tool." Journal of the Korea Society for Simulation 22, no. 4 (December 31, 2013): 93–98. http://dx.doi.org/10.9709/jkss.2013.22.4.093.

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Landowski, Matthew M., and Z. John Shen. "TCAD Based Power Semiconductor Device e-Learning Tool." Journal of Power Electronics 10, no. 6 (November 20, 2010): 643–46. http://dx.doi.org/10.6113/jpe.2010.10.6.643.

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Sakai, Atsushi, Katsumi Eikyu, Kenichi Hisada, Yasuhiro Yamashita, Koichi Arai, Hiroyuki Arie, Yutaka Akiyama, and Tomohiro Yamashita. "Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization." Materials Science Forum 963 (July 2019): 609–12. http://dx.doi.org/10.4028/www.scientific.net/msf.963.609.

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The effective modeling methodology of 4H-SiC trench gate MOSFETs is presented. The potential barrier lowering at the MOS channel region suggested by I-V measurements is implemented to commercial TCAD tool as the net-doping reduction. The proposed model is validated by comparison of TCAD simulations with I-V measurements and SEM image observations.
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Ruey-Sing Wei and A. Sangiovanni-Vincentelli. "PLATYPUS: A PLA Test Pattern Generation Tool." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 5, no. 4 (October 1986): 633–44. http://dx.doi.org/10.1109/tcad.1986.1270233.

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Hongmei Li, C. E. Zemke, G. Manetas, V. I. Okhmatovski, E. Rosenbaum, and A. C. Cangellaris. "An automated and efficient substrate noise analysis tool." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 25, no. 3 (March 2006): 454–68. http://dx.doi.org/10.1109/tcad.2005.854628.

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Riente, Fabrizio, Giovanna Turvani, Marco Vacca, Massimo Ruo Roch, Maurizio Zamboni, and Mariagrazia Graziano. "ToPoliNano: A CAD Tool for Nano Magnetic Logic." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 36, no. 7 (July 2017): 1061–74. http://dx.doi.org/10.1109/tcad.2017.2650983.

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Oikonomakos, P., and M. Zwolinski. "An Integrated High-Level On-Line Test Synthesis Tool." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 25, no. 11 (November 2006): 2479–91. http://dx.doi.org/10.1109/tcad.2006.882120.

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Tulunay, GÜlin, and Sina Balkir. "A Synthesis Tool for CMOS RF Low-Noise Amplifiers." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 27, no. 5 (May 2008): 977–82. http://dx.doi.org/10.1109/tcad.2008.917579.

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Abderehman, Mohammed, Rupak Gupta, Rakesh Reddy Theegala, and Chandan Karfa. "BLAST: Belling the Black-Hat High-Level Synthesis Tool." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 41, no. 11 (November 2022): 3661–72. http://dx.doi.org/10.1109/tcad.2022.3200513.

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Kuznetsov, Maksim, Sergey Kalinin, Alexey Cherkaev, and Dmitriy Ostertak. "Investigating physical model interface in the TCAD Sentaurus environment." Transaction of Scientific Papers of the Novosibirsk State Technical University, no. 3 (November 18, 2020): 39–48. http://dx.doi.org/10.17212/2307-6879-2020-3-39-48.

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Currently, the application SDevice software package TCAD Sentaurus is a reliable tool for electrophysical simulation of silicon CMOS transistors operating in the temperature range of -60 °C – +125 °C. To adapt the modeling process to specific physical conditions of the devices, application SDevice has an extensive library of models of electrophysical parameters, in particular models of mobility or band gap energy. However, when the device operates under extreme cryogenic conditions, there is a need to rework these models using a special Physical Model Interface (PMI). The paper presents methodological features of work with PMI and results of implementation of custom parameter models for silicon devices.
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Дисертації з теми "TCAD TOOL"

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Henseler, Rebecca Anne. "Modulation of the 3'IgH Regulatory Region (3'IgH RR), a prospective in vitro screening tool for identifying potential immunotoxicants." Wright State University / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=wright1196883435.

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Rosenbaum, Tommy. "Performance prediction of a future silicon-germanium heterojunction bipolar transistor technology using a heterogeneous set of simulation tools and approaches." Thesis, Bordeaux, 2017. http://www.theses.fr/2017BORD0550/document.

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Анотація:
Les procédés bipolaires semi-conducteurs complémentaires à oxyde de métal (BiCMOS) peuvent être considérés comme étant la solution la plus généralepour les produits RF car ils combinent la fabrication sophistiquée du CMOSavec la vitesse et les capacités de conduction des transistors bipolaires silicium germanium(SiGe) à hétérojonction (HBT). Les HBTs, réciproquement, sontles principaux concurrents pour combler partiellement l'écart de térahertzqui décrit la plage dans laquelle les fréquences générées par les transistors etles lasers ne se chevauchent pas (environ 0.3 THz à 30 THz). A_n d'évaluerles capacités de ces dispositifs futurs, une méthodologie de prévision fiable estsouhaitable. L'utilisation d'un ensemble hétérogène d'outils et de méthodes desimulations permet d'atteindre successivement cet objectif et est avantageusepour la résolution des problèmes. Plusieurs domaines scientifiques sont combinés, tel que la technologie de conception assistée par ordinateur (TCAO),la modélisation compacte et l'extraction des paramètres.Afin de créer une base pour l'environnement de simulation et d'améliorerla confirmabilité pour les lecteurs, les modèles de matériaux utilisés pour lesapproches hydrodynamiques et de diffusion par conduction sont introduits dèsle début de la thèse. Les modèles physiques sont principalement fondés surdes données de la littérature basées sur simulations Monte Carlo (MC) ou dessimulations déterministes de l'équation de transport de Boltzmann (BTE).Néanmoins, le module de TCAO doit être aussi étalonné sur les données demesure pour une prévision fiable des performances des HBTs. L'approchecorrespondante d'étalonnage est basée sur les mesures d'une technologie depointe de HBT SiGe pour laquelle un ensemble de paramètres spécifiques àla technologie du modèle compact HICUM/L2 est extrait pour les versionsdu transistor à haute vitesse, moyenne et haute tension. En s'aidant de cesrésultats, les caractéristiques du transistor unidimensionnel qui sont généréesservent de référence pour le profil de dopage et l'étalonnage du modèle. Enélaborant des comparaisons entre les données de références basées sur les mesureset les simulations, la thèse fait progresser l'état actuel des prévisionsbasées sur la technologie CAO et démontre la faisabilité de l'approche.Enfin, une technologie future de 28nm performante est prédite en appliquantla méthodologie hétérogène. Sur la base des résultats de TCAO, leslimites de la technologie sont soulignées
Bipolar complementary metal-oxide-semiconductor (BiCMOS) processescan be considered as the most general solution for RF products, as theycombine the mature manufacturing tools of CMOS with the speed and drivecapabilities of silicon-germanium (SiGe) heterojunction bipolar transistors(HBTs). HBTs in turn are major contenders for partially filling the terahertzgap, which describes the range in which the frequencies generated bytransistors and lasers do not overlap (approximately 0.3THz to 30 THz). Toevaluate the capabilities of such future devices, a reliable prediction methodologyis desirable. Using a heterogeneous set of simulation tools and approachesallows to achieve this goal successively and is beneficial for troubleshooting.Various scientific fields are combined, such as technology computer-aided design(TCAD), compact modeling and parameter extraction.To create a foundation for the simulation environment and to ensure reproducibility,the used material models of the hydrodynamic and drift-diffusionapproaches are introduced in the beginning of this thesis. The physical modelsare mainly based on literature data of Monte Carlo (MC) or deterministicsimulations of the Boltzmann transport equation (BTE). However, the TCADdeck must be calibrated on measurement data too for a reliable performanceprediction of HBTs. The corresponding calibration approach is based onmeasurements of an advanced SiGe HBT technology for which a technology specific parameter set of the HICUM/L2 compact model is extracted for thehigh-speed, medium-voltage and high-voltage transistor versions. With thehelp of the results, one-dimensional transistor characteristics are generatedthat serve as reference for the doping profile and model calibration. By performingelaborate comparisons between measurement-based reference dataand simulations, the thesis advances the state-of-the-art of TCAD-based predictionsand proofs the feasibility of the approach.Finally, the performance of a future technology in 28nm is predicted byapplying the heterogeneous methodology. On the basis of the TCAD results,bottlenecks of the technology are identified
Bipolare komplementäre Metall-Oxid-Halbleiter (BiCMOS) Prozesse bietenhervorragende Rahmenbedingungen um Hochfrequenzanwendungen zurealisieren, da sie die fortschrittliche Fertigungstechnik von CMOS mit derGeschwindigkeit und Treiberleistung von Silizium-Germanium (SiGe) Heterostruktur-Bipolartransistoren (HBTs) verknüpfen. Zudem sind HBTs bedeutendeWettbewerber für die teilweise Überbrückung der Terahertz-Lücke, derFrequenzbereich zwischen Transistoren (< 0.3 THz) und Lasern (> 30 THz).Um die Leistungsfähigkeit solcher zukünftigen Bauelemente zu bewerten, isteine zuverlässige Methodologie zur Vorhersage notwendig. Die Verwendungeiner heterogenen Zusammenstellung von Simulationstools und Lösungsansätzenerlaubt es dieses Ziel schrittweise zu erreichen und erleichtert die Fehler-_ndung. Verschiedene wissenschaftliche Bereiche werden kombiniert, wie zumBeispiel der rechnergestützte Entwurf für Technologie (TCAD), die Kompaktmodellierungund Parameterextraktion.Die verwendeten Modelle des hydrodynamischen Simulationsansatzes werdenzu Beginn der Arbeit vorgestellt, um die Simulationseinstellung zu erläuternund somit die Nachvollziehbarkeit für den Leser zu verbessern. Die physikalischenModelle basieren hauptsächlich auf Literaturdaten von Monte Carlo(MC) oder deterministischen Simulationen der Boltzmann-Transportgleichung(BTE). Für eine zuverlässige Vorhersage der Eigenschaften von HBTs muss dieTCAD Kon_guration jedoch zusätzlich auf der Grundlage von Messdaten kalibriertwerden. Der zugehörige Ansatz zur Kalibrierung beruht auf Messungeneiner fortschrittlichen SiGe HBT Technologie, für welche ein technologiespezifischer HICUM/L2 Parametersatz für die high-speed, medium-voltage undhigh-voltage Transistoren extrahiert wird. Mit diesen Ergebnissen werden eindimensionaleTransistorcharakteristiken generiert, die als Referenzdaten fürdie Kalibrierung von Dotierungspro_len und physikalischer Modelle genutztwerden. Der ausführliche Vergleich dieser Referenz- und Messdaten mit Simulationengeht über den Stand der Technik TCAD-basierender Vorhersagenhinaus und weist die Machbarkeit des heterogenen Ansatzes nach.Schlieÿlich wird die Leistungsfähigkeit einer zukünftigen Technologie in28nm unter Anwendung der heterogenen Methodik vorhergesagt. Anhand derTCAD Ergebnisse wird auf Engpässe der Technologie hingewiesen
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Navarro, González María del Carmen. "Caenorhabditis elegans as a research tool to study mitochondrial diseases associated with defects in tRNA modification." Doctoral thesis, Universitat Politècnica de València, 2016. http://hdl.handle.net/10251/61978.

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[EN] Post-transcriptional modification of the wobble uridine (U34) of a tRNA set is an evolutionary conserved process, produced by homologous proteins from the MnmA/MTU1, MnmE/GTPBP3 and MnmG/MTO1 families. Mutations in the human genes MTU1 and GTPBP3 or MTO1 produce acute infantile liver failure, and hypertrophic cardiomyopathy and lactic acidosis, respectively, which usually cause lethality in the first months of life. It is assumed that the primary cause of these diseases is the lack of the modifications introduced by the MTU1 protein in position 2 (tiol) and GTPBP3 and MTO1 proteins (taurinomethylation) in position 5 at U34 in a subgroup of mt-tRNAs. Nevertheless, the molecular mechanisms underlying these diseases (and other diseases associated with such modifications) are not clear. The reason why the typical defects of oxidative phosphorylation (due to impaired mitochondrial translation) produce such wide range of phenotypes is still unknown. Our hypothesis sustains that the mitochondria-nucleus retrograde signaling pathways triggered by the hypomodification at position 2 and 5 of U34 are different, and that each nuclear response is modulated by the genetic and epigenetic programs of cells and organisms. In this work, we have used the nematode Caenorhabditis elegans as a model organism to study the effects of inactivating the homologue proteins to MTU1, GTPBP3 and MTO1, which we have named as MTTU-1, MTCU-1 and MTCU-2, respectively. We have proved that these nuclear encoded proteins are located in mitochondria and are involved in U34 modification of mt-tRNAs. The mtcu-1 and mtcu-2 mutants show a reduction in fertility, while the mttu-1 mutant shows a reduction in fertility and a lengthening of the reproductive cycle (both phenotypes are thermosensitive). The phenotypes exhibited by the mttu-1, mtcu-1 and mtcu-2 mutants support our hypothesis, in which the mttu-1 single mutation, on the one hand, and the mtcu-1 and mtcu-2 single mutations, on the other hand, trigger different retrograde signaling pathways which produce specific nucear expression. Thus, a nuclear dependent phenotypic trait (as transcription or mt-tRNAs stability) and the expression of nuclear genes as ucp-4, hsp-6, hsp-60 and other genes involved in mitochondrial metabolism show a differential pattern in both group of mutants. hsp-6 and hsp-60 genes (UPRmt markers) are downregulated in mttu-1 single mutant, which could be related to fertility and reproductive cycle thermosensitivity. The three single mutants exhibit reduced expression of glycolysis and ß-oxidation genes (usually more drastic in the mttu-1 mutant), an induction of a glutaminolysis marker, and an induction of the ucp-4 gene, which encodes a transporter of the succinate to the mitochondria. Due to all three single mutants display a mild OXPHOS dysfunction, we propose that the observed changes in the expression of genes involved in the mitochondrial metabolism reveal a TCA cycle reprogramming aimed to compensate the reduction of acetil-CoA (coming from glycolysis and fatty acid oxidation) though the activation of anaplerotic pathways characterized by the succinate import to mitochondria by UCP-4 and the incorporation of 2-oxoglurate from glutaminolysis. We also analyze the effects of the simultanous suppression of modifications at positions 2 and 5 of U34 in C. elegans. The double mutant mtcu-2;mttu-1 displayed a severe OXPHOS dysfunction and a 5-fold higher AMP/ATP ratio, which was associated with embryonic lethality, developmental arrest in primary larval stages, penetrant sterility in adults and extended lifespan. This lifespan extension is modulated by signaling pathways which depend on AMPK (specifically on AAK-1 catalitic subunit) and steroid hormones, through DAF-9 and DAF-12 proteins. This work shows the important gene reprogramming related to mitochondrial metabolism in response to U34 hypomodification of mt-tRNAs, and shows new connexions between signaling pathways that extend lifespan.
[ES] La modificación post-transcripcional de la uridina de tambaleo (U34) de ciertos tRNAs es un proceso conservado evolutivamente, realizado por proteínas homólogas de las familias MnmA/MTU1, MnmE/GTPBP3 y MnmG/MTO1, y biológicamente relevante. De hecho, mutaciones en los genes humanos MTU1 y GTPBP3 o MTO1 causan fallo hepático infantil agudo y cardiomiopatía hipertrófica infantil, respectivamente, que producen letalidad durante los primeros meses de vida. Se asume que la causa primaria de estas enfermedades es la ausencia de las modificaciones introducidas por la proteína MTU1 en la posición 2 (tiol) y las proteínas GTPBP3 y MTO1 (taurinometil) en la posición 5 de la U34 en un grupo de mt-tRNAs. Se desconocen los mecanismos subyacentes y las razones por las que el déficit de OXPHOS resultante en todos los casos (atribuido a alteraciones de la traducción mitocondrial de proteínas) produce fenotipos tan diversos. Nuestra hipótesis es que la señalización retrógrada mitocondria-núcleo promovida por la hipomodificación de los mt-tRNAs en 2 ó 5 de la U34 es diferente y la respuesta nuclear viene modulada por el programa genético y epigenético de células y organismos. Hemos utilizado el nematodo C. elegans como modelo para estudiar los efectos producidos por la inactivación de las proteínas homólogas de MTU1, GTPBP3 y MTO1 a las que hemos denominado MTTU-1, MTCU-1 y MTCU-2. Hemos comprobado que estas proteínas, codificadas por el núcleo, son de localización mitocondrial y están implicadas en la modificación de la U34 de los mt-tRNAs. Los mutantes mtcu-1 y mtcu-2 presentan una reducción en su fertilidad y, en el caso del mutante simple mttu-1, fenotipos asociados a termosensibilidad. Los fenotipos exhibidos por los mutantes mttu-1, mtcu-1 y mtcu-2 sustentan la hipótesis de que la mutación mttu-1, y las mutaciones mtcu-1 y mtcu-2 promueven señales retrógradas diferentes que producen patrones de expresión nuclear específicos. Así, un rasgo fenotípico dependiente de genes nucleares (como lo es la transcripción y/o estabilidad de los mt-tRNAs) y la expresión de genes nucleares como ucp-4, hsp-6, hsp-60 y otros implicados en el metabolismo mitocondrial muestran un patrón diferente en los dos grupos de mutantes. Los genes hsp-6 y hsp-60 (marcadores de la UPRmt) están regulados a la baja en el mutante mttu-1. Los tres mutantes simples exhiben una reducción en la expresión de genes de la glicólisis y de la ß-oxidación de los ácidos grasos, una inducción en un marcador de glutaminolisis y una inducción en el gen ucp-4 (mayor en mttu-1) implicado en el transporte de succinato a la mitocondria. Dado que los tres mutantes simples presentan una disfunción OXPHOS relativamente suave, proponemos que los cambios de expresión en genes que modulan el metabolismo mitocondrial revelan una reprogramación del ciclo del TCA que compensa la disminución en el aporte de acetil-CoA procedente de glicólisis y oxidación de ácidos grasos con la activación de rutas anapleróticas del ciclo del TCA (importe de succinato a la mitocondria por UCP-4 y aporte de ¿-cetoglutarato procedente de la glutaminolisis). También analizamos los efectos de la anulación simultánea de las modificaciones en las posiciones 2 y 5 de la U34. El doble mutante mttu-1;mtcu-2 presenta una disfunción OXPHOS severa, con una ratio AMP/ATP 5 veces superior al control, que resulta en letalidad embrionaria, detención del desarrollo en estadios larvarios tempranos y esterilidad completa en los adultos que presentan, por otra parte, una longevidad unas dos veces superior a la cepa control. Este incremento de la longevidad está modulado por rutas de señalización que dependen de la subunidad catalítica AAK-1 (AMPK), y de hormonas esteroideas (proteínas DAF-9 y DAF-12). El trabajo muestra la importante reprogramación de genes relacionados con el metabolismo mitocondrial en respuesta a la hipomodificación de la U34 de los mt-tRNAs y
[CAT] La modificació post-transcripcional de la uridina de balanceig (U34) de certs tRNAs és un procés conservat evolutivament realitzat per proteïnes homòlogues a les de les famílies MnmA/MTU1, MnmE/GTPBP3 i MnmG/MTO1 i biològicament relevant. De fet, mutacions en els gens humans MTU1 i GTPBP3 o MTO1 causen fallada hepàtica infantil aguda i cardiomiopatia hipertròfica infantil amb acidosis làctica, respectivament, que produïxen letalitat durant els primers mesos de vida. S'assumix que la causa primària d'aquestes malalties és l'absència de les modificacions introduïdes per la proteïna MTU1 a la posició 2 (tiol) i per les proteïnes GTPBP3 i MTO1 (taurinometil) a la posició 5 de la U34 en un grup de mt-tRNAs. Es desconeixen els mecanismes subjacents en estes malalties i les raons per les quals el dèficit de la OXPHOS resultant en tots els casos (atribuït a alteracions de la traducció mitocondrial de proteïnes) produïx fenotips tan diversos. La nostra hipòtesi és que la senyalització retrògrada mitocondria-nucli promoguda per la hipomodificació dels mt-tRNAs en 2 o 5 de la U34 és diferent i la resposta nuclear en cada cas es dependent del programa genètic i epigenètic de cèl¿lules i organismes. Hem utilitzat el nematode C. elegans com a organisme model per a estudiar els efectes produïts per la inactivació de les proteïnes homòlogues de MTU1, GTPBP3 i MTO1 a les que hem denominat MTTU-1, MTCU-1 i MTCU-2. Hem comprovat que aquestes proteïnes, codificades pel nucli, són de localització mitocondrial i estan implicades en la modificació de la U34 dels mt-tRNAs. Els mutants mtcu-1 i mtcu-2 presenten una reducció en la seua fertilitat i, en el cas del mutant mttu-1, fenotipus associats a termosensibilitat. Els fenotipus exhibits pels mutants mttu-1, mtcu-1 i mtcu-2 sustenten la hipòtesi que la mutació mttu-1, i les mutacions mtcu-1 i mtcu-2 promouen senyals retrògrads diferents que produïxen patrons d'expressió nuclears específics. Així, un tret fenotípic dependent de gens nuclears (com ho és la transcripció i/o l'estabilitat dels mt-tRNAs) i l'expressió de gens nuclears com ucp-4, hsp-6, hsp-60 i altres implicats en el metabolisme mitocondrial mostren un patró diferent en els dos grups de mutants. Els gens hsp-6 i hsp-60 (marcadors de la UPRmt) estan regulats a la baixa en el mutant mttu-1. Els tres mutants simples exhibixen una reducció en l'expressió de gens de la glicòlisi i de la ß-oxidació dels àcids grassos, una inducció en un marcador de glutaminolisi i una inducció en el gen ucp-4 (major en el mutant mttu-1) implicat en el transport de succinat a la mitocondria. Atés que els tres mutants simples presenten una disfunció OXPHOS relativament suau, proposem que els canvis d'expressió en gens que modulen el metabolisme mitocondrial revelen una reprogramació del cicle del TCA que compensa la disminució en l'aportació d'acetil-CoA procedent de la glicòlisi i de l'oxidació d'àcids grassos amb l'activació de rutes anaplerótiques del cicle del TCA (importació de succinat a la mitocondria per UCP-4 i aportació de ¿-cetoglutarat de la glutaminolisi). També s'analitzen els efectes de l'anul¿lació simultània de les modificacions en 2 i 5 de la U34. El doble mutant mttu-1;mtcu-2 presenta una disfunció OXPHOS severa, amb una ràtio AMP/ATP 5 vegades superior al control, que resulta en letalitat embrionària, detenció del desenvolupament en estadis larvaris primerencs, esterilitat completa en els adults i una longevitat unes 2 vegades superior al control. Aquest increment de la longevitat està modulat per rutes de senyalització que depenen de la subunitat catalítica AAK-1 (AMPK), i d'hormones esteroidees (a través de les proteïnes DAF-9 i DAF-12). En resum, aquest treball mostra per primera vegada a nivell d'un animal model la important reprogramació de gens relacionats amb el metabolisme mitocondrial en resposta a la hipomodificació de la U34 dels mt-tRNAs i
Navarro González, MDC. (2016). Caenorhabditis elegans as a research tool to study mitochondrial diseases associated with defects in tRNA modification [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/61978
TESIS
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Salisbury, Richard L. Jr. "TCDD represses 3'IghRR activation through an AhR-dependent shift in the NF-κB/Rel protein complexes binding to κB motifs within the hs1,2 and hs4 enhancers". Wright State University / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=wright1401136335.

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SINGH, DIVYANSH. "IMPLEMENTATION OF NANOWIRE RECONFIGURABLE FET AS A BIOSENSOR WITH IMPROVED SENSITIVITY." Thesis, 2023. http://dspace.dtu.ac.in:8080/jspui/handle/repository/19878.

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Анотація:
Reconfigurable FET can be used as both p type and n type as per the requirement by applying voltage to the electrodes accordingly. Nanowire RFET has got a structure with two gates, one acting for the biasing and the other for current control (that is ON or OFF). The structure is like Nanowire heterostructure. The technique used here is dielectric modulation and based on that the variation in threshold voltage related sensitivity. These find major applications in Programmable Logic Arrays since can be programmed as p type or n type. The RFET used in this project has been developed as a biosensor by creating a cavity and then filling it with neutral biomolecules, whose permittivity is varied. The simulated of the structure has been done and the sensitivity has been calculated using Silvaco TCAD tool.
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Liu, Yu-Chun, and 柳有駿. "Development of Adaptive Fitting Parameters Optimization TCAD Tool for Optoelectronic Device Modeling Based on Artificial Neural Networks." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/9n7ar7.

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Анотація:
碩士
國立臺灣大學
光電工程學研究所
106
The discovery of highly efficient organic light-emitting-diodes (OLEDs) in the 1980s has attracted extensive attentions on organic semiconductors and devices. However, the accurate physical properties is difficult to be defined clearly. For example, carrier mobility or density of states for organic materials are difficult to be identified correctly. There exist many parameters to be configured out and those parameters are usually controversial in the measurement. With so many possible configurations of parameters, it is very hard for researchers to quickly sort out the accurate configuration. In this thesis, we developed an automatic fitting programs based on AI techniqies. We used convolutional neural networks (CNN) for data fitting. By the gradient descent behavior of CNN, it can reduce the time for fitting process and optimize parameters to match the experimental data. With the assistance from CNN model, the fittng time is significant reduced compared to brute-force search method. The parameters obtained from CNN model shows a good agreement to the experimental result. In addition, CNN can also be used to optimize LED efficiency. According to the results, it is reduced the efficiency droop from 7.83\% to 6.35\% and reduced the turn on voltage from 4.96V to 4.86V for a UV LED with gradual composition EBL (GEBL) by adjusting the aluminum composition in GEBL. With a proper configuration of CNN model, we can maximize the use of the computing resources to assist engineers for device designs.
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Hanlon, Paul Robert. "TCDD-mediated inhibition of adipocyte differentiation : using TCDD as a tool to identify molecular mechanisms critical for adipogenesis /." 2003. http://www.library.wisc.edu/databases/connect/dissertations.html.

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Частини книг з теми "TCAD TOOL"

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Klimeck, Gerhard. "NEMO 1-D: the first NEGF-based TCAD tool." In Simulation of Semiconductor Processes and Devices 2004, 9–12. Vienna: Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0624-2_2.

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Jayachandran, Remya, Rama S. Komaragiri, and K. J. Dhanaraj. "Simulation of Reconfigurable FET Circuits Using Sentaurus TCAD Tool." In Sub-Micron Semiconductor Devices, 165–80. Boca Raton: CRC Press, 2022. http://dx.doi.org/10.1201/9781003126393-11.

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Wicha, Santichai, Bernadette Sharp, Anthony S. Atkins, Pradorn Sureephong, and Nopasit Chakpitak. "TCAD: Vocabulary Acquisition Tool for Motivating Bilingual Pupils with Hearing Impairment in Learning English." In Where Humans Meet Machines, 271–83. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-6934-6_12.

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Grace, Jessy, Sphoorthy Bhushan, Chinnam S. V. Maruthi Rao, and Ameet Chavan. "16 nm FinFET Based Radiation Hardened Standard Cell Library Analysis Using Visual TCAD Tool." In Advances in Robotics, Automation and Data Analytics, 206–13. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-70917-4_20.

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5

Malavena, Gerardo. "Modeling of GIDL–Assisted Erase in 3–D NAND Flash Memory Arrays and Its Employment in NOR Flash–Based Spiking Neural Networks." In Special Topics in Information Technology, 43–53. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-030-85918-3_4.

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Анотація:
AbstractSince the very first introduction of three-dimensional (3–D) vertical-channel (VC) NAND Flash memory arrays, gate-induced drain leakage (GIDL) current has been suggested as a solution to increase the string channel potential to trigger the erase operation. Thanks to that erase scheme, the memory array can be built directly on the top of a $$n^+$$ n + plate, without requiring any p-doped region to contact the string channel and therefore allowing to simplify the manufacturing process and increase the array integration density. For those reasons, the understanding of the physical phenomena occurring in the string when GIDL is triggered is important for the proper design of the cell structure and of the voltage waveforms adopted during erase. Even though a detailed comprehension of the GIDL phenomenology can be achieved by means of technology computer-aided design (TCAD) simulations, they are usually time and resource consuming, especially when realistic string structures with many word-lines (WLs) are considered. In this chapter, an analysis of the GIDL-assisted erase in 3–D VC nand memory arrays is presented. First, the evolution of the string potential and GIDL current during erase is investigated by means of TCAD simulations; then, a compact model able to reproduce both the string dynamics and the threshold voltage transients with reduced computational effort is presented. The developed compact model is proven to be a valuable tool for the optimization of the array performance during erase assisted by GIDL. Then, the idea of taking advantage of GIDL for the erase operation is exported to the context of spiking neural networks (SNNs) based on NOR Flash memory arrays, which require operational schemes that allow single-cell selectivity during both cell program and cell erase. To overcome the block erase typical of nor Flash memory arrays based on Fowler-Nordheim tunneling, a new erase scheme that triggers GIDL in the NOR Flash cell and exploits hot-hole injection (HHI) at its drain side to accomplish the erase operation is presented. Using that scheme, spike-timing dependent plasticity (STDP) is implemented in a mainstream NOR Flash array and array learning is successfully demonstrated in a prototype SNN. The achieved results represent an important step for the development of large-scale neuromorphic systems based on mature and reliable memory technologies.
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López-Serrano, José, and Andrzej J. Strojwas. "Layout Design Rule Generation with TCAD Tools for Manufacturing." In Simulation of Semiconductor Devices and Processes, 62–65. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_14.

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Caricato, Anselmo, and Eleonora Stival. "Transcranial Doppler (TCD/TCCD) and Ultrasonography: A Useful Tool in the Aeromedical Transport. What Should We Consider?" In Neurosonology in Critical Care, 1065–73. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-81419-9_67.

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Ghazli, A., A. Aissat, and J. P. Vilcot. "Simulation of a Silicon Based Solar Cell Using TCAD-Silvaco Tools." In ICREEC 2019, 303–9. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5444-5_38.

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Nanda, R. K., E. Mohapatra, T. P. Dash, P. Saxena, P. Srivastava, R. Trigutnayat, and C. K. Maiti. "Atomistic Level Process to Device Simulation of GaNFET Using TNL TCAD Tools." In Advances in Electrical Control and Signal Systems, 815–26. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-5262-5_61.

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Ditlev-Simonsen, Caroline D. "Key Tools for Social- and Environmental Performance, and the UN Sustainable Development Goals (SDGs)." In A Guide to Sustainable Corporate Responsibility, 61–101. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-88203-7_4.

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Анотація:
AbstractCorporate responsibility provides the foundation for sustainable development. It is a complex sphere since there are several confusing initiatives intended to help companies incorporate sustainability. From an international perspective, the UN initiatives have had the most impact. I provide a short introduction to the history of key UN initiatives associated with environmental and social issues and how they relate to business and corporations. As the UN Sustainable Development Goals (SDGs) have a key global framework for sustainable development, they will be discussed in detail with special attention to challenges and practical relevance for corporations. Well-known and widely applied initiatives to evaluate corporate performance like Fair Trade Certificate and ISO 14001; greenhouse and climate reporting initiatives, like the GHG Protocol, CDP, TCFD; sustainable reporting frameworks, like GRI and IIRC; and supply chain guidance and due diligence like the OECD Guidelines for Multinational Enterprises, and new laws on transparency, will be presented.
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Тези доповідей конференцій з теми "TCAD TOOL"

1

Sanudin, Rahmat, Muhammad Suhaimi Sulong, Marlia Morsin, and Mohd Helmy Abd Wahab. "Simulation study on NMOS gate length variation using TCAD tool." In 2009 1st Asia Symposium on Quality Electronic Design (ASQED 2009). IEEE, 2009. http://dx.doi.org/10.1109/asqed.2009.5206255.

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Bahrudin, M. S., S. F. Abdullah, and I. Ahmad. "Statistical modeling of solar cell using Taguchi method and TCAD tool." In 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE). IEEE, 2012. http://dx.doi.org/10.1109/smelec.2012.6417073.

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Pasadas, Francisco, Anibal Pacheco-Sanchez, Nikolaos Mavredakis, and David Jiménez. "Graphene field-effect transistor TCAD tool for circuit design under freeware." In 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD). IEEE, 2023. http://dx.doi.org/10.1109/smacd58065.2023.10192189.

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Triltsch, U., and S. Büttgenbach. "TCAD tool for innovative MEMS and MOEMS: an all-in-one solution." In MOEMS-MEMS 2008 Micro and Nanofabrication, edited by Mary-Ann Maher, Jung-Chih Chiao, and Paul J. Resnick. SPIE, 2008. http://dx.doi.org/10.1117/12.773043.

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Sahu, Abhijeet, Mamta Khosla, Neetu Sood, and Girish Wadhwa. "Dual-Cavity Triple-Metal Gate-Underlap Dielectric-Modulated Charge-Plasma-based TFET for the Biomolecules Recognition." In International Conference on Women Researchers in Electronics and Computing. AIJR Publisher, 2021. http://dx.doi.org/10.21467/proceedings.114.68.

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In this era of technology, biosensors play an essential role in living life. Today’s research and investigation revolved around its higher responsiveness and speed of detection. Normal TFET has many disadvantages like fabrication complexity, random dopant fluctuation, and the lower ON-State current. We are introducing a device that is a Dual-Cavity Triple-Metal gate-underlap DM-CPTFET for label-free detection. This device has a dual cavity for sensing different types of biomolecules simultaneously. We used the tool i.e SILVACO ATLAS TCAD Simulator for the sensing applications. High K material and gate work function engineering help us to improve drain current and better sensitivity. We used this TCAD tool, for analyzing the different parameter variations like energy band variation, surface potential, transfer characteristic, and output characteristic using different biomolecules Gelatin(k=12), Keratin(K=8), Biotin(K=2.63), etc.
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Ismail, Muhamad Amri. "Impact of implantation methods on speed and accuracy trade-off in calibrated TCAD tool." In 2014 IEEE 11th International Conference on Semiconductor Electronics (ICSE). IEEE, 2014. http://dx.doi.org/10.1109/smelec.2014.6920821.

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Martinez, Antonio, Natalia Seoane, Manuel Aldegunde, Asen Asenov, and John R. Barker. "The Non-equilibrium Green function approach as a TCAD tool for future CMOS technology." In 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2011. http://dx.doi.org/10.1109/sispad.2011.6035058.

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Gupta, Rahul, Mamta Khosla, and Girish Wadhwa. "Design and Analysis of a Dual Material Triple Gate TFET with the Pocket Doping for the Performance Enhancement." In International Conference on Women Researchers in Electronics and Computing. AIJR Publisher, 2021. http://dx.doi.org/10.21467/proceedings.114.69.

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In this investigated work, we have analysed the miscellaneous figure of merit for Double metal Triple gate TFET. Various techniques have been utilized to improve the ON-state driven current in the drain by doing a comprehensive analysis. Different techniques are examined and correlated by using the TCAD Silvaco tool to get excellent ON current. Further work function engineering has been done in the optimized DMTG-TFET to increase its performance and finally, we introduce pocket doping that increases the ON current (2.34×10-3) and also ION/IOFF ratio (4.36×1014) with subthreshold (SS) of 25.8mV/decade. The pocket doped DMTG-TFET adequately suppress the ambipolarity and endeavour about 20 times higher ION as compared to conventional DMTG-TFET.
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Mulder, Randal, Sam Subramanian, and Tony Chrastecky. "Low Voltage, Low Current AFP Characterization of Non-Visible Soft Transistor Defects." In ISTFA 2008. ASM International, 2008. http://dx.doi.org/10.31399/asm.cp.istfa2008p0428.

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Abstract This paper presents case studies that examine low voltage, low current electrical characterization and analysis of data that could help identify root cause failure mechanisms for soft transistor failures, providing a review of Vt shifts and blocked LDD implants review. The case studies demonstrate the importance of getting the most information possible out of all aspects of the nanoprobe electrical characterization results for failing transistors. Technology computer aided design (TCAD) modeling of transistor defects will be a useful tool for the nanoprobe analyst to identify the subtle defects that can only be identified through careful electrical characterization in conjunction with process analysis and experiments by the manufacturing facility. However, modeling at the transistor level has its difficulties. The key will be to build a library of electrical signatures with corresponding defects as they are discovered.
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Zhang, Kuiyuan, Shohei Kanda, Junki Yamaguchi, Jun Furuta, and Kazutoshi Kobayashi. "Analysis of the soft error rates on 65-nm SOTB and 28-nm UTBB FD-SOI structures by a PHITS-TCAD based simulation tool." In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). IEEE, 2015. http://dx.doi.org/10.1109/sispad.2015.7292282.

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