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Автор: Grafiati

Опубліковано: 11 вересня 2023

Оновлено: 9 лютого 2024

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1

Wang, Ke, Haodong Jiang, Yiming Liao, Yue Xu, Feng Yan, and Xiaoli Ji. "Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach." Electronics 11, no. 21 (November 2, 2022): 3582. http://dx.doi.org/10.3390/electronics11213582.

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Анотація:

In this paper, a novel approach that combines technology computer-aided design (TCAD) simulation and machine learning (ML) techniques is demonstrated to assist the analysis of the performance degradation of GaN HEMTs under hot-electron stress. TCAD is used to simulate the statistical effect of hot-electron-induced, electrically active defects on device performance, while the artificial neural network (ANN) algorithm is tested for reproducing the simulation results. The results show that the ML-TCAD approach can not only rapidly obtain the performance degradation of GaN HEMTs, but can accurately predict the progressive failure under the work conditions with a mean squared error (MSE) of 0.2, informing the possibility of quantitative failure data analysis and rapid defect extraction via the ML-TCAD approach.

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2

Pan, Zijin, Cheng Li, Mengfu Di, Feilong Zhang, and Albert Wang. "3D TCAD Analysis Enabling ESD Layout Design Optimization." IEEE Journal of the Electron Devices Society 8 (2020): 1289–96. http://dx.doi.org/10.1109/jeds.2020.3027034.

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3

Gupta, Vaibhav. "Performance Analysis of TFET and VDSTFET for Low Power Application using the Work Function Engineering." International Journal for Research in Applied Science and Engineering Technology 9, no. VI (June 25, 2021): 2722–27. http://dx.doi.org/10.22214/ijraset.2021.35534.

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Анотація:

We report a design of TFET which is quite different from conventional TFET. The structure of VTFET is similar to MOSFET but the conducting mechanism is completely different. Vertical TFET is designed perpendicular to the horizontal plane. The switching and carrier transportation mechanism of VTFET is based on the mechanism of the band to band tunneling through a potential barrier and vertical TFET is based on tunneling perpendicular to the device rather than a mechanism like thermionic emission unlike in MOSFET. We have designed a model for the two-dimension structure of V-TFET which consists of the dual-source and single drain. The channel among the drain and gate region is extraordinarily thin. We have plotted the transfer characteristics of V-TFET according to device parameters using TCAD. The comparison of VTFET with DSVTFET is done by using Silvaco TCAD and the effect of source doping, and work function on transfer characteristics of the device is examined by using silvaco TCAD simulations. The proposed device produces a low-off current.

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4

Kim, Won-Young, Gee Young Suh, Jin Won Huh, Sung-Han Kim, Min-ju Kim, Yun Seong Kim, Hye-Ryoun Kim, et al. "Triple-Combination Antiviral Drug for Pandemic H1N1 Influenza Virus Infection in Critically Ill Patients on Mechanical Ventilation." Antimicrobial Agents and Chemotherapy 55, no. 12 (October 3, 2011): 5703–9. http://dx.doi.org/10.1128/aac.05529-11.

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ABSTRACTA recentin vitrostudy showed that the three compounds of antiviral drugs with different mechanisms of action (amantadine, ribavirin, and oseltamivir) could result in synergistic antiviral activity against influenza virus. However, no clinical studies have evaluated the efficacy and safety of combination antiviral therapy in patients with severe influenza illness. A total of 245 adult patients who were critically ill with confirmed pandemic influenza A/H1N1 2009 (pH1N1) virus infection and were admitted to one of the intensive care units of 28 hospitals in Korea were reviewed. Patients who required ventilator support and received either triple-combination antiviral drug (TCAD) therapy or oseltamivir monotherapy were analyzed. A total of 127 patients were included in our analysis. Among them, 24 patients received TCAD therapy, and 103 patients received oseltamivir monotherapy. The 14-day mortality was 17% in the TCAD group and 35% in the oseltamivir group (P= 0.08), and the 90-day mortality was 46% in the TCAD group and 59% in the oseltamivir group (P= 0.23). None of the toxicities attributable to antiviral drugs occurred in either group of our study, including hemolytic anemia and hepatic toxicities related to the use of ribavirin. Logistic regression analysis indicated that the odds ratio for the association of TCAD with 90-day mortality was 0.58 (95% confidence interval, 0.24 to 1.42;P= 0.24). Although this study was retrospective and did not provide virologic outcomes, our results suggest that the treatment outcome of the triple combination of amantadine, ribavirin, and oseltamivir was comparable to that of oseltamivir monotherapy.

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5

Passeri, D., M. Baroncini, P. Ciampolini, G. M. Bilei, A. Santocchia, B. Checcucci, and E. Fiandrini. "TCAD-based analysis of radiation-hardness in silicon detectors." IEEE Transactions on Nuclear Science 45, no. 3 (June 1998): 602–8. http://dx.doi.org/10.1109/23.682456.

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6

Scheinemann, Artur, and Andreas Schenk. "TCAD-based DLTS simulation for analysis of extended defects." physica status solidi (a) 211, no. 1 (January 2014): 136–42. http://dx.doi.org/10.1002/pssa.201300233.

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7

Li, Fuxing, Changchun Chai, Yuqian Liu, Yanxing Song, Lei Wang, and Yintang Yang. "Study on ESD Protection Circuit by TCAD Simulation and TLP Experiment." Micromachines 14, no. 3 (March 4, 2023): 600. http://dx.doi.org/10.3390/mi14030600.

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The anti-ESD characteristic of the electronic system is paid more and more attention. Moreover, the on-chip electrostatic discharge (ESD) is necessary for integrated circuits to prevent ESD failures. In this paper, the mixed TCAD model of the ESD protection circuit is built and simulated, and the negative transmission line pulse (TLP) injection damage experiment is carried out on the CD4069UBC chip. The circuit model consists of three-dimensional shallow trench isolation (STI) diode TCAD models and a three-dimensional multi-gate Complementary Metal-Oxide-Semiconductor (CMOS) inverter TCAD model. Moreover, the TCAD modeling is based on a 0.25 μm technology node. Through the transient simulation of the electrothermal coupling, the electrical signal of the input and output nodes of the circuit and the distribution of the electrothermal parameters in the device are obtained. Moreover, by analyzing the simulation results, the physical phenomena and the mechanisms of interference and damage mechanism during TLP injection are explained. The location and type of diode damage in the TLP injection simulation results of the circuit model are consistent with the TLP experiment damage results. The proposed ESD protection circuit model and analysis method are beneficial to ESD robustness prediction and ESD soft damage analysis of IC.

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8

Hajj, Ibrahim N. "Extended Nodal Analysis." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 31, no. 1 (January 2012): 89–100. http://dx.doi.org/10.1109/tcad.2011.2167330.

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9

Jongyoon Jung and Taewhan Kim. "Variation-Aware False Path Analysis Based on Statistical Dynamic Timing Analysis." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 31, no. 11 (November 2012): 1684–97. http://dx.doi.org/10.1109/tcad.2012.2202392.

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10

Vytyaz, Igor, David C. Lee, Pavan Kumar Hanumolu, Un-Ku Moon, and Kartikeya Mayaram. "Sensitivity Analysis for Oscillators." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 27, no. 9 (September 2008): 1521–34. http://dx.doi.org/10.1109/tcad.2008.927731.

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11

Kobayashi, Koji, Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka-Masada, Ryo Hirose, Akihiro Suzuki, Yoshihiro Koga, Koji Sueoka, and Kazunari Kurita. "TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate Surface." Crystals 14, no. 2 (January 24, 2024): 112. http://dx.doi.org/10.3390/cryst14020112.

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Анотація:

In this study, we investigate the initial rapid recrystallization of a discretely amorphized C3H5-molecular-ion-implanted silicon (Si) substrate surface in the subsequent thermal annealing treatment through the analysis of plan-view transmission electron microscopy (TEM) images and technology computer-aided design (TCAD) process simulation. In the approach of the analysis of the plan-view TEM image of the Si substrate surface, we found that initial rapid recrystallization occurs in the intermediate regions between the residual crystalline and discrete amorphous regions formed in the C3H5-molecular-ion-implanted Si substrate surface. In addition, the TCAD process simulation results indicate that the intermediate regions correspond to the amorphous pockets formed around the discrete amorphous regions in the C3H5-molecular-ion-implanted Si substrate surface and are recrystallized preferentially during the short thermal annealing time. These plan-view TEM image analysis and TCAD process simulation results reveal a two-step recrystallization of the discretely amorphized C3H5-molecular-ion-implaned Si substrate surface. After the initial rapid recrystallization of amorphous pockets in the 1st step, the recrystallization of discrete amorphous regions starts in the 2nd step. The incubation period between the 1st and 2nd steps is the time required to recrystallize the amorphous pockets around the discrete amorphous regions completely and redefine the amorphous/crystalline interface.

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12

Rigaud-Minet, Florian, Julien Buckley, William Vandendaele, Matthew Charles, Marie-Anne Jaud, Elise Rémont, Hervé Morel, et al. "Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors." Energies 15, no. 19 (September 26, 2022): 7062. http://dx.doi.org/10.3390/en15197062.

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Many kinds of defects are present in the different layers of GaNonSi epitaxy. Their study is very important, especially because they play a significant role on the device characteristics. This paper investigates the cause of the temperature dependence of the output and Miller capacitance at three temperatures: 25 °C, 75 °C and 150 °C of GaN-on-Si power transistors. In particular, this study focuses on the temperature dependence of the depletion voltage seen in these characteristics due to the progressive depletion of the two-dimensional electron gas (2DEG) under the device field plates. First, variations of the epitaxial growth are studied, showing that the intrinsic carbon concentration does not play a significant role. Secondly, the deep acceptor trap origin of the temperature dependence is analyzed with a TCAD simulation study. Thirdly, by adjusting TCAD parameters and binding them with experimental concentrations to fit experimental data, trap properties were obtained. The comparison of these properties with the acceptor traps in the literature suggests that the origin is a gallium vacancy tied to oxygen atom(s) on the N site.

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13

Boufouss, E., J. Alvarado, and D. Flandre. "Compact modeling of the high temperature effect on the single event transient current generated by heavy ions in SOI 6T-SRAM." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000077–82. http://dx.doi.org/10.4071/hitec-eboufouss-ta25.

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Анотація:

A temperature dependence analysis of the single event transient current induced by heavy ions irradiation is performed in the range of 300K to 500K on a 1μm SOI CMOS MOSFET standard 6T-SRAM cell. The Sentaurus TCAD mixed-mode numerical simulation showed a significant impact of the temperature on the current induced by the radiation and as a result, an increase of the 6T-SRAM sensitivity upon radiation. A SOI MOSFET compact model introduced in SPICE as a Verilog-A module reproducing the single event effects was developed. This model shows a very good agreement with the TCAD simulations results but with a drastic reduction of the simulation time. Furthermore this model could be extended to other circuits simulations. This result is of importance to allow for extensive circuit design studies which cannot be carried out with TCAD physical simulations.

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14

Vakili, Aref, Lucio Pancheri, Mahsa Farasat, Antonino La Magna, David Mascali, and Matteo Bregoli. "Analysis of the performance of low gain avalanche diodes for future particle detectors." Journal of Instrumentation 18, no. 07 (July 1, 2023): P07052. http://dx.doi.org/10.1088/1748-0221/18/07/p07052.

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Abstract Low-Gain Avalanche Diodes (LGAD) are the sensor of choice for the timing detectors of the ATLAS and CMS experiments at the High Luminosity Large Hadron Collider (HL-LHC). This paper presents the results of static and dynamic performance evaluations of LGADs manufactured by Hamamatsu Photonics K.K. (HPK) and Brookhaven National Laboratory (BNL). Timing performance was measured using β-scopes after a static characterization of the device (current-voltage and capacitance-voltage curves) and a time resolution better than 35 ps was extracted under high operational bias voltage before irradiation. This value is considered within the nominal requirements of the ATLAS project for un-irradiated sensors. Transient Current Technique (TCT) was used to observe and analyze a gain suppression mechanism, i.e. a decrease in gain correlated with increased laser intensities. TCAD simulations were carried out to interpret the gain suppression of the BNL sensors under different conditions of bias voltage and laser intensity. A good correspondence between experimental observations and TCAD simulations was found.

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15

Bryant, R. E. "Boolean Analysis of MOS Circuits." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 6, no. 4 (July 1987): 634–49. http://dx.doi.org/10.1109/tcad.1987.1270310.

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16

Gnudi, A., P. Ciampolini, R. Guerrieri, M. Rudan, and G. Baccarani. "Sensitivity Analysis for Device Design." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 6, no. 5 (September 1987): 879–85. http://dx.doi.org/10.1109/tcad.1987.1270330.

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17

Jianwen Zhu and S. Calman. "Context sensitive symbolic pointer analysis." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 24, no. 4 (April 2005): 516–31. http://dx.doi.org/10.1109/tcad.2005.844092.

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18

Vygen, J. "Slack in static timing analysis." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 25, no. 9 (September 2006): 1876–85. http://dx.doi.org/10.1109/tcad.2005.858348.

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19

Kouroussis, D., R. Ahmadi, and F. N. Najm. "Voltage-Aware Static Timing Analysis." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 25, no. 10 (October 2006): 2156–69. http://dx.doi.org/10.1109/tcad.2005.860953.

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20

Sinha, Debjit, and Hai Zhou. "Statistical Timing Analysis With Coupling." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 25, no. 12 (December 2006): 2965–75. http://dx.doi.org/10.1109/tcad.2006.882482.

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21

Choudhury, M. R., and K. Mohanram. "Reliability Analysis of Logic Circuits." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 28, no. 3 (March 2009): 392–405. http://dx.doi.org/10.1109/tcad.2009.2012530.

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22

Ye, Zuochang, Zhenhai Zhu, and Joel R. Phillips. "Incremental Large-Scale Electrostatic Analysis." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 28, no. 11 (November 2009): 1641–53. http://dx.doi.org/10.1109/tcad.2009.2030267.

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23

Finder, Alexander, Andre Sulflow, and Gorschwin Fey. "Latency Analysis for Sequential Circuits." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 33, no. 4 (April 2014): 643–47. http://dx.doi.org/10.1109/tcad.2013.2292501.

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24

Lu, Zhonghai, and Xueqian Zhao. "xMAS-Based QoS Analysis Methodology." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 37, no. 2 (February 2018): 364–77. http://dx.doi.org/10.1109/tcad.2017.2706561.

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25

Jung, Hakkee. "Analysis of Subthreshold Swing of Symmetric Junctionless Double Gate MOSFET Using Gaussian Doping Profile." International Journal of Emerging Technology and Advanced Engineering 12, no. 1 (January 16, 2022): 23–30. http://dx.doi.org/10.46338/ijetae0122_03.

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Анотація:

—The variation of subthreshold swing(SS) according to the projected range (Rp ) and standard projected deviation (σp ) was analyzed when the symmetrical junctionless double gate (JLDG) MOSFET was doped with Gaussian doping profile. For this purpose, the analytical SS model was presented. We compared with the TCAD results to turn out the validity of this model, and the SSs of this model agreed with those of TCAD. The effective conduction path and mean doping concentration affecting the SS were analyzed according to the Rp and σp . As a result, the SS increased as the Rp and σp increased simultaneously. The smaller the Rp and the larger the σp , the lower the SS. When Rp = 1.5 nm, it showed the SS below 100mV/dec without being affected by the change of σp or silicon thickness. When σp = 3nm, it was also 100mV/dec or less regardless of the change of Rp and silicon thickness. Keywords— Double gate, Junctionless, Subthreshold swing, Gaussian, Projected range, Standard projected deviation

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26

Jeong, Jee-Hun, Ogyun Seok, and Ho-Jun Lee. "Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling." Applied Sciences 11, no. 24 (December 18, 2021): 12075. http://dx.doi.org/10.3390/app112412075.

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Анотація:

A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed. The optimal BPW doping concentration (NBPW) was extracted by analytical modeling and a numerical technology computer-aided design (TCAD) simulation, in order to analyze the breakdown mechanisms for SiC TMOSFETs using BPW, while considering the electric field distribution at the edge of the trench gate. Our results showed that the optimal NBPW obtained by analytical modeling was almost identical to the simulation results. In addition, the reverse transfer capacitance (Cgd) values obtained from the analytical model correspond with the results of the TCAD simulation by approximately 86%; therefore, this model can predict the switching characteristics of the effect BPW regions.

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27

Herrera-Moreno, Alfonso, José Luis García-Gervacio, Héctor Villacorta-Minaya, and Héctor Vázquez-Leal. "TCAD analysis and modeling for NBTI mechanism in FinFET transistors." IEICE Electronics Express 15, no. 14 (2018): 20180502. http://dx.doi.org/10.1587/elex.15.20180502.

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28

Petrosyants, K. O., A. A. Pugachev, I. A. Kharitinov, and B. G. Lvov. "I-V- Characteristics analysis of betavoltaic microbatteries using TCAD model." Journal of Physics: Conference Series 1353 (November 2019): 012093. http://dx.doi.org/10.1088/1742-6596/1353/1/012093.

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29

Wang, Jinghui, Padhraic L. Mulligan, and Lei R. Cao. "Transient current analysis of a GaN radiation detector by TCAD." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 761 (October 2014): 7–12. http://dx.doi.org/10.1016/j.nima.2014.05.098.

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30

Hanson, D. A., R. J. G. Goossens, M. Redford, J. McGinty, J. K. Kibarian, and K. W. Michaels. "Analysis of mixed-signal manufacturability with statistical technology CAD (TCAD)." IEEE Transactions on Semiconductor Manufacturing 9, no. 4 (1996): 478–88. http://dx.doi.org/10.1109/66.542163.

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31

Fleury, C., G. Notermans, H. M. Ritter, and D. Pogany. "TIM, EMMI and 3D TCAD analysis of discrete-technology SCRs." Microelectronics Reliability 76-77 (September 2017): 698–702. http://dx.doi.org/10.1016/j.microrel.2017.06.070.

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32

Kenrow, J. A. "Characterization and Analysis of OFET Devices Based on TCAD Simulations." IEEE Transactions on Electron Devices 52, no. 9 (September 2005): 2034–41. http://dx.doi.org/10.1109/ted.2005.854281.

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33

Ceric, Hajdin, Orio de, Wolfhard Zisser, and Siegfried Selberherr. "Microstructural impact on electromigration: A TCAD study." Facta universitatis - series: Electronics and Energetics 27, no. 1 (2014): 1–11. http://dx.doi.org/10.2298/fuee1401001c.

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Анотація:

Current electromigration models used for simulation and analysis of interconnect reliability lack the appropriate description of metal microstructure and consequently have a very limited predictive capability. Therefore, the main objective of our work was obtaining more sophisticated electromigration models. The problem is addressed through a combination of different levels of atomistic modeling and already available continuum level macroscopic models. A novel method for an ab initio calculation of the effective valence for electromigration is presented and its application on the analysis of EM behavior is demonstrated. Additionally, a simple analytical model for the early electromigration lifetime is obtained. We have shown that its application gives a reasonable estimate for the early electromigration failures including the effect of microstructure.

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34

Blaauw, D., V. Zolotov, and S. Sundareswaran. "Slope propagation in static timing analysis." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 21, no. 10 (October 2002): 1180–95. http://dx.doi.org/10.1109/tcad.2002.802274.

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35

Vrudhula, S., D. T. Blaauw, and S. Sirichotiyakul. "Probabilistic analysis of interconnect coupling noise." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 22, no. 9 (September 2003): 1188–203. http://dx.doi.org/10.1109/tcad.2003.816212.

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36

Hongliang Chang and S. S. Sapatnekar. "Statistical timing analysis under spatial correlations." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 24, no. 9 (September 2005): 1467–82. http://dx.doi.org/10.1109/tcad.2005.850834.

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37

Haifeng Qian, S. R. Nassif, and S. S. Sapatnekar. "Power grid analysis using random walks." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 24, no. 8 (August 2005): 1204–24. http://dx.doi.org/10.1109/tcad.2005.850863.

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38

Tseng, K., and M. Horowitz. "False coupling exploration in timing analysis." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 24, no. 11 (November 2005): 1795–805. http://dx.doi.org/10.1109/tcad.2005.852435.

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39

Ruibing Lu and Cheng-Kok Koh. "Performance analysis of latency-insensitive systems." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 25, no. 3 (March 2006): 469–83. http://dx.doi.org/10.1109/tcad.2005.854636.

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40

Zhang, M., and N. R. Shanbhag. "Soft-Error-Rate-Analysis (SERA) Methodology." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 25, no. 10 (October 2006): 2140–55. http://dx.doi.org/10.1109/tcad.2005.862738.

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41

Miskov-Zivanov, Natasa, and Diana Marculescu. "Circuit Reliability Analysis Using Symbolic Techniques." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 25, no. 12 (December 2006): 2638–49. http://dx.doi.org/10.1109/tcad.2006.882592.

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