Готові списки джерел за темами / Switching Transition

Добірка наукової літератури з теми "Switching Transition"

Автор: Grafiati
Опубліковано: 6 вересня 2023

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Статті в журналах з теми "Switching Transition"

1

Malinenko, V. P., L. A. Aleshina, A. L. Pergament, and G. V. Germak. "Switching Effects and Metal−Insulator Transition in Manganese Oxide." Journal on Selected Topics in Nano Electronics and Computing 1, no. 1 (December 2013): 44–50. http://dx.doi.org/10.15393/j8.art.2013.3005.

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2

Yan, Zhongna, Dou Zhang, Xuefan Zhou, He Qi, Hang Luo, Kechao Zhou, Isaac Abrahams, and Haixue Yan. "Silver niobate based lead-free ceramics with high energy storage density." Journal of Materials Chemistry A 7, no. 17 (2019): 10702–11. http://dx.doi.org/10.1039/c9ta00995g.

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Анотація:
Electrical field dependence of permittivity in (1 − x)AN-xBZN ceramics. Arrow directions down, up and down then up are related to domain switching, field induced transition and domain switching plus field induced transitions, respectively.
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3

Higgins, Matthew L., and Frank Ofori-Acheampong. "A Markov Regime-Switching Model with Time-Varying Transition Probabilities for Identifying Asset Price Bubbles." International Journal of Economics and Finance 10, no. 4 (March 3, 2018): 1. http://dx.doi.org/10.5539/ijef.v10n4p1.

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Анотація:
In this paper, a Markov regime-switching model with time-varying transition probabilities is developed to identify asset price bubbles in the S&P 500 index. The model nests two different methodologies; a state-dependent regime-switching model and a Markov regime-switching model. Three bubble regimes are identified; dormant, explosive, and collapsing. Time-varying transition probabilities are specified for each of the nine possible transitions in the Markov regime-switching model. Estimation of the model is done using conditional maximum likelihood with the Hamilton filter. Results show that transition probabilities depend significantly on trading volume and relative size of the bubble. Overall, the model works well in detecting multiple bubbles in the S&P 500 between January 1888 and May 2010. Explosive bubbles tend to immediately precede recession periods, while collapsing bubbles tend to coincide with recession periods.
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4

Han, Xiao, Ying Hui Gao, Yao Hong Sun, and Ping Yan. "An Electronic Model of Capacitor Charging Power Supply Considering Transient Switching Interference." Advanced Materials Research 706-708 (June 2013): 1738–41. http://dx.doi.org/10.4028/www.scientific.net/amr.706-708.1738.

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In this paper, a mathematical analysis of the EMI(Electromagnetic Interference) for a 20kHz/10kV capacitor charging power supply in frequency-domain is presented, and a related circuit model considering the transient switching interference is proposed. Due to the high working frequency and the device-switching transitions, the conducted EMI caused by the charging circuit which includes the harmonics of grid frequency, working frequency and device-switching transition frequencies. Thus under certain working situations or loads parallel power supply, the interference may cause charging failure. To solve this problem, a high frequency transformer modeled with stray capacitances and an approximation of the device-switching transition is applied in the Pspice-based simulation model, and a mathematical analysis in frequency-domain is presented.
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5

Shrestha, Ramesh, Yuxuan Luan, Sunmi Shin, Teng Zhang, Xiao Luo, James S. Lundh, Wei Gong, et al. "High-contrast and reversible polymer thermal regulator by structural phase transition." Science Advances 5, no. 12 (December 2019): eaax3777. http://dx.doi.org/10.1126/sciadv.aax3777.

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In comparison with the advancement of switchable, nonlinear, and active components in electronics, solid-state thermal components for actively controlling heat flow have been extremely rare. We demonstrate a high-contrast and reversible polymer thermal regulator based on the structural phase transition in crystalline polyethylene nanofibers. This structural phase transition represents a dramatic change in morphology from a highly ordered all-trans conformation to a combined trans and gauche conformation with rotational disorder, leading to an abrupt change in phonon transport along the molecular chains. For five nanofiber samples measured here, we observe an average thermal switching ratio of ~8× and maximum switching ratio of ~10×, which occurs in a narrow temperature range of 10 K across the structural phase transition. To the best of our knowledge, the ~10× switching ratio exceeds any reported experimental values for solid-solid and solid-liquid phase transitions of materials. There is no thermal hysteresis observed upon heating/cooling cycles.
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6

Castenschiold, R. "Closed-transition switching of essential loads." IEEE Transactions on Industry Applications 25, no. 3 (1989): 403–7. http://dx.doi.org/10.1109/28.31209.

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7

Sawa, Akihito. "Resistive switching in transition metal oxides." Materials Today 11, no. 6 (June 2008): 28–36. http://dx.doi.org/10.1016/s1369-7021(08)70119-6.

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8

TIAN, Shijun, Xifan WANG, Xiuli WANG, Chengcheng SHAO, and Rong YE. "Network transition security for transmission switching." Journal of Modern Power Systems and Clean Energy 7, no. 5 (September 2019): 1105–14. http://dx.doi.org/10.1007/s40565-019-0562-1.

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9

Ramesh, K., Pumlianmunga, R. Venkatesh, N. Naresh, and E. S. R. Gopal. "Phase Change Properties of Chalcogenide Glasses - Some Interesting Observations." Key Engineering Materials 702 (July 2016): 37–42. http://dx.doi.org/10.4028/www.scientific.net/kem.702.37.

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Анотація:
Chalcogenide glasses switches from a high-resistance (OFF) state to a low-resistance (ON) state at a threshold voltage (Vth) under high electric fields. This electrical switching is of two types: (i) Threshold switching and (i) memory switching. Threshold switching device revert back to the OFF state immediately upon the removal of the applied voltage, whereas a memory device retains the ON state even after the removal of the applied voltage. Due to Joule heating, a filament is formed between the electrodes and the current is confined within this filament and there is an increase in current density. This increases the temperature inside the filament and there is a transition from high resistive amorphous/glass phase to a low resistive crystalline phase in memory switching materials. In the threshold switching glasses electronic processes like space charge, Poole-Frenkel effect, etc., are responsible. The structural transitions are irreversible whereas the electronic processes are reversible and hence the threshold glasses regain their original state (OFF) and memory glasses remain in the ON state.Interestingly, differential scanning calorimetric studies (DSC) show that both the threshold and memory switching glasses exhibit crystallization (structural transition). Accordingly, glasses which crystallize upon heating should exhibit memory switching behaviour. But the switching experiments indicate that among the glasses which undergo structural transition (crystallization) some show threshold switching and some show memory switching. To understand this, Cu-As-Se, Al-As-Te, Ge-As-Se-Te, Al-As-Se-Te glasses were thermally crystallized under vacuum in two ways: (i) by annealing at their respective crystallization temperatures (Tc) and (ii) heated up to their melting temperatures (Tm) and cooled back to room temperature. Interestingly, most of the threshold switching glasses shows amorphous nature or a huge amorphous background with crystalline peaks when cooled from their melting temperatures. The memory switching glasses crystallize in both the cases.We propose that both threshold and memory glasses undergo phase change and the crystalline phases formed from the melt state are responsible for switching to occur. Hence, at the time of switching the sample in between the electrodes undergo phase change by glass → melt → crystal transformation and not by the direct glass → crystal transformation.
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10

Davis, Peter. "Adaptive Mode Selection Using On–Off Switching of Chaos." International Journal of Bifurcation and Chaos 08, no. 08 (August 1998): 1671–74. http://dx.doi.org/10.1142/s0218127498001339.

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Анотація:
Onset of chaotic mode transition can be used in a simple and robust mechanism for adaptation in multimode systems. We present an idealized model of adaptive mode selection using on–off switching of chaotic basin transitions in a multistable system. A stochastic description obtained in the limit of large switching intervals gives search times in terms of projections of the chaotic state onto basins of multistability.
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Більше джерел

Дисертації з теми "Switching Transition"

1

Alsindi, Wassim Zuhair. "Solvent based switching of photophysical properties of transition metal complexes." Thesis, University of Nottingham, 2007. http://eprints.nottingham.ac.uk/13786/.

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The work presented in this Thesis describes the modular design and spectroscopic study of polynuclear systems based on ruthenium (II) and rhenium (I) complexes. A combination of UV/vis, luminescence and TRIR spectroscopies, electrochemistry, spectroelectrochemistry and conformational analysis have been employed to understand the electronic structure of the ground and excited states of these compounds. Chapter I gives an introductory background to this Thesis. An overview of transition metal photophysics and excited states, and the typical spectroscopic and electrochemical techniques used in their study is presented. Previous studies of the ground and excited state properties of the complexes [Ru(bpy)3]2+ and [ReCl(CO)3bpy)] which are used as supramolecular building blocks in this Thesis are presented and a number of relevant studies of supramolecular systems are described. Chapter 2 contains a study extending the known family of [Ru(CN)4(NN)]2- complexes and describes their unique advantages over [Ru(bpy)3]2+. The results obtained are discussed alongside previous studies. This completes the introduction of the molecular building blocks used in Chapters 3 and 4. Chapter 3 details a study of through-space PEnT in bimetallic systems constructed from the complexes introduced in Chapters I and 2, bridged by a saturated alkyl linker between bpy ligands on either metal. This Chapter demonstrates the solvent-switchable nature of the direction and gradient of PEnT, using ps-TRIR spectroscopy to directly probe these processes in real time. Chapter 4 describes a study of bimetallic systems bridged by conjugated the ligand 2,2'- bipyrimidine. Monometallic, homobimetallic and heterobimetallic systems are studied and questions arising from limitations of previous studies are addressed. In particular ps-TRIR spectroscopy gives new insight into the numerous ultrafast processes occurring. Chapter 5 summarises the achievements of this Thesis and suggests promising directions for extending this work in the future. Chapter 6 describes the experimental and theoretical techniques used in this Thesis.
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2

Trapatseli, Maria. "Doping controlled resistive switching dynamics in transition metal oxide thin films." Thesis, University of Southampton, 2018. https://eprints.soton.ac.uk/423702/.

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Анотація:
Transition metal oxide thin films have attracted increasing attention due to their potential in non-volatile resistive random access memory (RRAM) devices, where such thin films are used as active layers in metal-insulator-metal (MIM) configurations. Titanium dioxide is one of the most celebrated oxides among the ones that exhibit resistive switching behaviour due to its wide band gap, high thermal stability, and high dielectric constant. RRAM devices with various materials as active layers, have demonstrated very fast switching performance but also huge potential for miniaturisation, which is the bottleneck of FLASH memory. Nevertheless, these devices very often suffer poor endurance, physical degradation, large variability of switching parameters and low yields. In most cases, the physical degradation stems from high electroforming and switching voltages. Doping of the active layer has been often employed to enhance the performance of RRAM devices, like endurance, OFF/ON ratio, forming voltages, etc. In this work, doping in TiO2-x RRAM devices was used to engineer the electroforming and switching thresholds so that device degradation and failure can be delayed or prevented. Al and Nb were selected with basic criteria the ionic radius and the oxidation state. The doped RRAM devices, showed improved switching performance compared to their undoped counterparts. Alternative approaches to doping were also investigated, like multilayer stacks comprising Al2O3-y and TiO2-x thin films. Furthermore, Al:TiO2-x/Nb:TiO2-x bilayer RRAM devices were fabricated, to prove whether a diode behaviour of the p-n interface inside the RRAM was feasible. The latest would be a particularly interesting finding towards active electronics.
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3

Nishi, Yusuke. "Nonpolar Resistive Switching Based on Quantized Conductance in Transition Metal Oxides." Kyoto University, 2019. http://hdl.handle.net/2433/242544.

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4

Choi, Jae-Young. "Analysis of Inductor-Coupled Zero-Voltage-Transition Converters." Diss., Virginia Tech, 2001. http://hdl.handle.net/10919/28537.

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Анотація:
As is the case for DC-DC converters, multi-phase converters require both high-quality power control and high power-density. Although a higher switching frequency not only improves the quality of the converter output but also decreases the size of the converter, it increases switching losses and electromagnetic interference (EMI) noise. Since the soft-switching topologies reduce the switching losses of the converter main switches, the topologies make converters partially independent from the switching frequency. However, the conventional soft-switching topologies have already proposed most of the possible ways to improve converter performance. In addition, the trends of the newly generated power devices reduce the advantages of soft-switching topologies. This critical situation surrounding soft-switching topologies gives research motivations: What features of soft-switching topologies facilitate their practical applications? Given this motivation, the dissertation discusses two aspects = simplifying auxiliary circuits and accounting for the effects of soft-switching operations on the converter control. Engineers working with medium- and high-power multi-phase converters require simplified soft-switching topologies that have the same level of performance as the conventional soft-switching topologies. This demand is the impetus behind one of the research objectives = simplifying the auxiliary circuits of Zero-Voltage-Transition (ZVT) inverters. Simplifying the auxiliary circuits results in both a smaller number of and lower cost for auxiliary components, without any negative impact on performance. This dissertation proposes two major concepts for the simplification - the Single-Switch Single-Leg (S3L) ZVT cell and the Phase-Lock (PL) concept. Throughout an effort to eliminate circulating currents of inductor-coupled (IC) ZVT converters, the S3L ZVT cell is developed. The proposed cell allows a single auxiliary switch to achieve zero-voltage conditions for both the top and bottom main switches, and it achieves the same level of performance as the conventional ZVT cell, as well. This proposal makes IC ZVT topologies more attractive to multi-phase converter applications. Because all of the top main switches generally have identical sequences for zero-voltage turn-on commutations, one auxiliary switch might handle the commutations of all of the top main switches. This possibility introduces the PL concept, which allows the two auxiliary switches to provide a zero-voltage condition for any main switch commutation. In order to compensate for restrictions of this concept, a modified space-vector modulation (SVM) scheme also is introduced. A soft-switching topology changes the duty ratios of the converter, which affects the controllability of the converter. Therefore, this dissertation selects resolution of this issue as one of the research objectives. This dissertation derives the generalized timing equations of ZVT operations, and the generalized equations formulize the effect of ZVT operation on both duty ratios and DC current. Moreover, the effect of SVM schemes is also investigated. An average model of the ZVT converter is developed using both the timing analysis and the investigation of SVM schemes, and small-signal analysis using the average model predicts the steady-state characteristics of the converter.
Ph. D.
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5

Bertoni, Roman. "Ultrafast photo-switching of spin crossover crystals : coherence and cooperativity." Phd thesis, Université Rennes 1, 2013. http://tel.archives-ouvertes.fr/tel-01016162.

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The main topic of this thesis is the study of the ultrafast photo-switching of photo-magnetic molecular materials showing transition between spin states. These molecular crystals are prototypes of molecular bistability between two distinct electronic states, HS and LS. The molecules can be switched between these two states by a light pulse. The emergence of ultrafast techniques allows us to study in real time these photo-switching processes and also the associated out-of-equilibrium dynamics down to the femtosecond scale (10-15s). We have combined probes sensitive to the change of electronic state, on the hand, and to structural rearrangements, on the other hand, in order to observe these photo-switching processes. The measurements of ultrafast transient absorption spectroscopy have been made using the laser plateform at the IPR. Complementary time resolved X-ray diffraction and absorption experiments have been performed on large facilities. The first part of this manuscript is focused on the photo-switching dynamics at molecular scale. It reveals a complicated interaction between electronic and structural degrees of freedom. The generation and damping of coherent optical phonons is identified as a key parameter in the trapping in HS potential. Several experiments on different compounds show the linear and local character of such ultrafast photo-switching. The second part of this thesis presents studies on the complete out of equilibrium dynamics. It reveals a cascading process with activation of elastic and thermal effects at different time scales. Cooperative processes following a light excitation are observed. These complexes dynamics are driven by propagating and diffusive process sensitive to the size of the sample. The study of nanocrystals yields high conversion and faster response to elastics effect than single-crystals. These studies further elucidate the out of equilibrium processes underlying the photo-induced phase transitions on time and length scales, from the molecule to material scale.
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6

Gonzalez, Rosillo Juan Carlos. "Volume resistive switching in metallic perovskite oxides driven by the metal-Insulator transition." Doctoral thesis, Universitat Autònoma de Barcelona, 2017. http://hdl.handle.net/10803/405305.

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Анотація:
Los óxidos de perovskita fuertemente correlacionados son una clase de materials con fascinantes propiedades físicas intrínsecas debido a la interacción de efectos de carga, spin, órbita y cristalinos. Efectos exóticos, como superconductividad, ferromagnetismo, ferroelectricidad o transiciones metal-aislante se producen gracias a la competición de los diferentes grados de libertad del sistema. El uso de estos efectos en una nueva generación de dispositivos es una fuente de inspiración continua para la comunidad científica. Los dispositivos de Memoria Resistiva de Acceso aleatorio (RRAM) son uno de los candidatos más prometedores para ganar la carrera hacia la memoria universal del futuro, debido a sus excelentes propiedades en términos de escalabilidad, fatiga frente a ciclado, retención y velocidad de operación. Están basadas en el efecto de Conmutación Resistiva (RS), dónde dos (o más) estados de resistencia, reversibles y no volátiles son inducidos mediante la aplicación de un campo eléctrico intenso. Este fenómeno ha sido observado en una gran variedad de óxidos, donde es ampliamente aceptado que el movimiento de oxígeno juega un papel fundamental para explicar su origen. Sin embargo, el mecanismo físico preciso que gobierna el efecto depende del material, y en algunos de ellos, dicho mecanismo aún no es comprendido en su totalidad. Esta falta de compresión es hoy en vía es uno de los cuellos de botella que está retrasando el uso generalizado de esta tecnología. En esta tesis, presentamos un novedoso mecanismo de RS basado en la Transición Metal-Aislante (MIT) perovskitas metálicas con correlación electrónica fuerte. Hemos estudiado el comportamiento RS de tres diferentes familias de perovskitas metálicas: La1-xSrxMnO3, YBa2Cu3O7-d y RENiO3 y demostramos que estos tres sistemas con conducción mixta eletrónica-iónica pueden experimentar una MIT, como consecuencia de la aplicación del campo eléctrico intenso, y que puede transformar su volumen bulk. Esta conmutación resistiva de carácter volúmico tiene una naturaleza diferente the los usuales tipos filamentar e interfacial, y abre nuevas oportunidades para el diseño de nuevos dispositivos robustos. Hemos caracterizado conciencudamente el efecto de RS a la nanoescala mediante Microscopía de Fuerzas Atómicas en modo Conducción (C-AFM). Espectroscopía de Fuerza Túnel (STS) y medidas de transporte dependientes de la temperatura han sido realizadas en los diferentes estados resistivos para obtener detalles de su estructura electrónica. Hemos reproducido con éxito el comportamiento memristivo nanoscópico en una escala micrómetrica mediante el uso de sondas de W-Au en una estación de puntas. Usando esta aproximación, hemos llevado a cabo medidas en diferentes atmósferas, las cuales sugieren el intercambio de oxígeno con la atmósfera. Además, presentamos una prueba de concepto de una configuración de tres terminales, donde la conmutación resistiva es inducida en la puerta del dispositivo. En el caso particular del superconductor YBa2Cu3O7-d, hemos estudiado la influencia en las propiedades superconductoras de zonas de alta resistencia embebidas en la matriz del material. Esta aproximación sienta las bases hacia el diseño de dispositivos con zonas de anclaje de vórtices reconfigurables. La interpretación de los resultados se hará en términos de una transición volúmica de tipo Mott, que estimamos ser de validez general para perovskitas metálicas de óxidos complejos.
Strongly correlated perovskite oxides are a class of materials with fascinating intrinsic physical functionalities due to the interplay of charge, spin, orbital ordering and lattice effects. The exotic phenomena arising from these competing degrees of freedom include superconductivity, ferromagnetism, ferroelectricity and metal-insulator transitions, among others. The use of these exotic phenomena in a new generation of devices with new and enhanced functionalities is continuing inspiring the research community. In this sense, Resistive-Random Access Memories (RRAM) are one of the most promising candidates to win the race towards the universal memory of the future, which could overcome the limitations of actual technologies (Flash and Dynamic-RAM), due to their excellent properties in terms of scalability, endurance, retention and switching speeds. They are based on the Resistive Switching effect (RS), where the application of an electric field produces a reversible, non-volatile change in the resistance between two or more resistive states. This phenomenon has been observed in a large variety of oxide materials, where the motion of oxygen is widely accepted to play a key role in their outstanding properties. However, the exact mechanism governing this effect is material-dependent and for some of them it is still far to be understood. This lack of understanding is actually one of the main bottlenecks preventing the widespread use of this technology. In this thesis, we present a novel Resistive Switching mechanism based on the Metal-Insulator Transition (MIT) in metallic perovskite oxides with strong electron electron interaction. We analyse the RS behaviour of three different families of metallic perovskites: La1-xSrxMnO3, YBa2Cu3O7-δ and RENiO3 and demonstrate that the MIT of these mixed electronic-ionic conductors can be tuned upon the application of an electric field, being able to transform the entire bulk volume. This volume RS is different in nature from interfacial or filamentary type and opens new possibilities of robust device design. Thorough nanoscale electrical characterization of the RS effect in these systems has been performed by means of Conductive-Atomic Force Microscopy (C-AFM). Scanning Tunnelling Spectroscopy (STS) and temperature-dependent transport measurements were performed in the different resistive states to get insight into their electronic features. The nanoscale memristive behaviour of these systems is successfully reproduced at a micrometric scale with W-Au tips in probe station experiments. Using this approach, atmosphere dependent measurements were undertaken, where oxygen exchange with the ambience is strongly evidenced. In addition, we present a proof-of-principle result from a 3-Terminal configuration where the RS effect is applied at the gate of the device. In the particular case of superconducting YBa2Cu3O7-δ films, we have studied the influence of high resistance areas, which are embedded in the material, on the superconducting transport properties enabling vortex pinning modification and paving the way towards novel reconfigurable vortex pinning sites. We interpret the RS results of these strongly correlated systems in terms of a Mott volume transition, that we believe to be of general validity for metallic perovskite complex oxides. We have verified that strongly correlated metallic perovskite oxides are a unique class of materials very promising for RS applications due to its intrinsic MIT properties that boosts a robust volumetric resistive switching effect. This thesis settles down the framework to understand the RS effect in these strongly correlated pervoskites, which could eventually lead to a new generation of devices exploiting the intrinsic MIT of these systems.
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7

Chukmaitova, Dariga. "Sector-Switching in Transition Economies: A Case Study of Kazakhstan's Health Care Sector." Scholarship @ Claremont, 2011. http://scholarship.claremont.edu/cgu_etd/20.

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The dissertation examines the economic and behavioral factors influencing 'sector-switching' in Kazakhstan's health care industry. Sector-switching involves doctors moving from the national to the private system, which is not well established, thereby raising questions about why the switch occurs. It addresses the question: why health care professionals in Kazakhstan switch from the public sector to similar jobs in the private or nonprofit sectors? This study addresses a key issue in public management (sector switching) and also offers insights into the dynamics of the transition from a centralized economy to a market economy. As such, its findings have `real-world' applications beyond the particular case being studied i.e. Kazakhstan. This study is based on two simple claims. First, fundamental to the reforms that characterize transitional economies is effectively moving public sector employees to a nascent private sector. Second, such switches are unique because the risks related to transitioning to the private sector are different in transitional economies than in established market economies. Thus, the study considers: the degree to which economic and behavioral factors interact with different perceptions of sectoral risk, and subsequently shape the decision to move from the public sector to the private sector; in particular in Kazakhstan's health industry. The data supporting this study come from a survey covering approximately 1,000 health care professionals (practicing physicians working in both the public and private health care sectors) from nine regions of Kazakhstan. The data includes information about individual incentives physicians have for switching sections and their perceptions of perceived risks and uncertainties given the economic transition currently underway in Kazakhstan. The findings of the research suggest the strong support for the proposed hypotheses and have revealed some of the dynamics of sector switching behavior and the characteristics of "sector switchers" in Kazakhstan. The results demonstrate that physicians' overall job dissatisfaction, relative salary compared to physicians in a different sector, their risk-taking behavior, the national health care system's deterioration compared to previous years, as well as problems with providing medical services in the country affect physicians in making their decision to change their employment sector.
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8

Okumu, Emmanuel Latim. "Non-linear prediction in the presence of macroeconomic regimes." Thesis, Uppsala universitet, Statistiska institutionen, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-297222.

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This paper studies the predictive performance and in-sample dynamics of three regime switching models for Swedish macroeconomic time series. The models discussed are threshold autoregressive (TAR), Markov switching autoregressive (MSM-AR), and smooth-transition autoregressive (STAR) regime switching models. We perform recursive out-of-sample forecasting to study the predictive performance of the models. We also assess the in-sample dynamics correspondence to the forecast performance and find that there is not always a relationship. Furthermore, we seek to explore if these unrestricted models yield interpretable results regarding the regimes from an macroeconomic standpoint. We assess GDP-growth, the unemployment rate, and government bond yields and find evidence of Teräsvirta's claims that even when the data has non-linear dynamics, non-linear models might not improve the forecast performance of linear models when the forecast window is linear.
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9

Wang, Ge. "Phase switching behaviour in lead-free Na0.5Bi0.5TiO3-based ceramics." Thesis, University of Manchester, 2017. https://www.research.manchester.ac.uk/portal/en/theses/phase-switching-behaviour-in-leadfree-na05bi05tio3based-ceramics(267b315d-3757-4865-9f88-5eeed76d61c4).html.

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This PhD project is focused on three lead-free ferroelectric solid solutions, which are specifically Na0.5Bi0.5TiO3-KNbO3(NBT-KN), Na0.5Bi0.5TiO3-NaNbO3(NBT-NN) and Na0.5Bi0.5TiO3-BaTiO3(NBT-BT), to evaluate the effects of composition, electric field and temperature on structural and electrical properties. Novel observations of both reversible and irreversible electric field-induced phase switching were made in both NBT-KN and NBT-NN ceramics. The NBT-KN solid solution is the primary focus of this thesis. All compositions were observed to be cubic in the as-sintered, unpoled state. However, a well-defined ferroelectric hysteresis P-E loop was obtained for compositions with low KN contents, indicating that an irreversible phase transition from a weak-polar relaxor ferroelectric (RF) to a long-range ordered metastable ferroelectric (FE) state had occurred during the measurement procedure. Both the unpoled and poled ceramic powders were examined using high resolution synchrotron XRD. For the poled state, a rhombohedral R3c structure was identified for compositions with low KN content, confirming the occurrence of the irreversible electric field-induced structural transformation from cubic to rhombohedral. In contrast, a cubic structure was retained for high KN contents, giving rise to reversible phase switching evidenced by constricted P-E hysteresis loops. Similar behaviour was observed for NBT-NN system. An 'in-situ' electric field poling experiment was conducted using high energy synchrotron XRD. In certain NBT-KN compositions the structural transformation, from cubic to mixed phase cubic+rhombohedral and finally single phase rhombohedral, occurred progressively with increasing cycles of a bipolar electric field. Similar behaviour was observed for NBT-NN compositions having low NN contents. Furthermore, the distributions of domain orientation and lattice strain over a range of orientations relative to the poling direction were determined for NBT-KN, NBT-NN and NBT-BT ceramics exhibiting the rhombohedral phase. By combining the structural information with the results of dielectric and ferroelectric measurements, a phase diagram was constructed to illustrate the influence of temperature and composition on the stability of the metastable ferroelectric and relaxor ferroelectric states for the NBT-KN system. Furthermore, the phase transition temperatures obtained from dielectric measurements were correlated with the ferroelectric and thermal depolarisation characteristics for each of the NBT-KN, NBT-NN and NBT-BT systems.
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10

Landrock, Ruth Christine [Verfasser]. "Spatially resolved analysis of resistive switching in transition metal oxide thin films / Ruth Christine Landrock." Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2011. http://d-nb.info/1018206884/34.

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Книги з теми "Switching Transition"

1

Diebold, Francis X. Regime switching with time-varying transition probabilities. Philadelphia: Federal Reserve Bank of Philadelphia, Economic Research Division, 1993.

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2

The Chinese road to high technology: A study of telecommunications switching technology in the economic transition. New York: St. Martin's Press, 1999.

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3

Office, General Accounting. Telecommunications: Additional federal efforts could help advance digital television transition : report to the ranking minority member, Subcommittee on Telecommunications and the Internet, Committee on Energy and Commerce, House of Representatives. [Washington, D.C.]: General Accounting Office (441 G St. NW, Room LM, Washington, 20548), 2002.

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4

Switching Sides: Making the Transition from Obedience to Agility. Taylor Trade Publishing, 1999.

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5

Lane, Jeffrey. Code Switching. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780199381265.003.0003.

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Chapter 3 explores the primary challenge of the digital street: managing its visibility. This chapter reveals how teenagers in Harlem use online spaces to live out varied and contradictory identities. The author discusses the code-switching strategies teens developed to answer to the street code, but also to obligations of family, school, and work. The chapter indicates that teenagers first partitioned street life on Twitter to keep it from the adult world on Facebook before eventually opening up to the possibility of help from their elders. The author discusses Sarah’s fight video, Tiana’s attempts to “retire” from fighting, and Andre’s tenuous transition to college. The author finds that the teenagers in his study publicly supported each other’s scholastic and work-related achievements and did not count themselves out from mainstream life as others have argued of black teenagers in street-corner groups.
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6

Shen, Xiaobai. Chinese Road to High Technology: Telecommunications Switching Technology in the Economic Transition. Palgrave Macmillan, 2014.

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7

Shen, Xiaobai. Chinese Road to High Technology: Telecommunications Switching Technology in the Economic Transition. Palgrave Macmillan Limited, 1999.

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8

Shen, X. Chinese Road to High Technology: Telecommunications Switching Technology in the Economic Transition. Palgrave Macmillan, 1999.

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9

The Art Of Switching Up: A Simple guide to a profitable transition from gown to town. Nigeria: Exude Communications, 2019.

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10

Bao, Yun, Carl Chiarella, and Boda Kang. Particle Filters for Markov-Switching Stochastic Volatility Models. Edited by Shu-Heng Chen, Mak Kaboudan, and Ye-Rong Du. Oxford University Press, 2018. http://dx.doi.org/10.1093/oxfordhb/9780199844371.013.9.

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This chapter proposes an auxiliary particle filter algorithm for inference in regime switching stochastic volatility models in which the regime state is governed by a first-order Markov chain. It proposes an ongoing updated Dirichlet distribution to estimate the transition probabilities of the Markov chain in the auxiliary particle filter. A simulation-based algorithm is presented for the method that demonstrates the ability to estimate a class of models in which the probability that the system state transits from one regime to a different regime is relatively high. The methodology is implemented in order to analyze a real-time series, namely, the foreign exchange rate between the Australian dollar and the South Korean won.
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Частини книг з теми "Switching Transition"

1

Wong, Franklin J., and Shriram Ramanathan. "Electrical Transport in Transition Metal Oxides." In Resistive Switching, 165–96. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2016. http://dx.doi.org/10.1002/9783527680870.ch6.

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2

Xiao, Huafeng, Ruibin Wang, Chenhui Niu, Yun Liu, and Kairong Qian. "Zero-Current-Transition TLIs with Switching-Loss-Free." In CPSS Power Electronics Series, 25–52. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3038-6_3.

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3

Iwai, S., Y. Okimoto, M. Ono, H. Matsuzaki, A. Maeda, H. Kishida, H. Okamoto, and Y. Tokura. "Ultrafast insulator-to-metal switching by photoinduced Mott transition." In Springer Series in Chemical Physics, 340–42. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-27213-5_105.

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4

Becker, M. F., A. B. Buckman, R. M. Walser, T. Lépine, P. Georges, and A. Brun. "Femtosecond Switching of the Solid-State Phase Transition in VO2." In Springer Series in Chemical Physics, 320–21. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-85176-6_115.

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5

Shakouri, A., I. Gravé, Y. Xu, and A. Yariv. "Multi λ Controlled Operation of Quantum Well IR Detectors Using Electric Field Switching and Rearrangement." In Quantum Well Intersubband Transition Physics and Devices, 135–50. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1144-7_11.

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6

Linne, Thomas. "A Markov Switching Model of Stock Returns: An Application to the Emerging Markets in Central and Eastern Europe." In East European Transition and EU Enlargement, 371–79. Heidelberg: Physica-Verlag HD, 2002. http://dx.doi.org/10.1007/978-3-642-57497-9_23.

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7

Sneps-Sneppe, Manfred, Dmitry Namiot, and Maris Alberts. "Channel Switching Protocols Hinder the Transition to IP World: The Pentagon Story." In Lecture Notes in Computer Science, 185–95. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-30859-9_16.

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8

Bognár, Tomas, Jozef Komorník, and Magda Komorníková. "Application of Regime-Switching Models of Time Series with Cubic Spline Transition Function." In Soft Methodology and Random Information Systems, 581–88. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-44465-7_72.

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9

Gonzalez-Rosillo, Juan Carlos, Rafael Ortega-Hernandez, Júlia Jareño-Cerulla, Enrique Miranda, Jordi Suñe, Xavier Granados, Xavier Obradors, Anna Palau, and Teresa Puig. "Volume Resistive Switching in Metallic Perovskite Oxides Driven by the Metal-Insulator Transition." In Electronic Materials: Science & Technology, 289–310. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-42424-4_12.

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10

Yajima, Naonari, Toshi H. Arimura, and Taisuke Sadayuki. "Energy Consumption in Transition: Evidence from Facility-Level Data." In Economics, Law, and Institutions in Asia Pacific, 129–50. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6964-7_8.

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Abstract This chapter estimated the impact of the Tokyo emissions trading scheme (ETS) and Saitama ETS on energy consumption in the manufacturing sector using a facility-level panel data set compiled from the Current Survey of Energy Consumption, a nationwide survey on energy consumption conducted by the Agency for Natural Resources and Energy in Japan. To our knowledge, no study has used this rich data set to perform sophisticated econometric analyses. We found that the Tokyo ETS reduced electricity consumption by 16%. On the other hand, we did not find evidences of switching from dirty fossil fuel to cleaner fuel associated with the introduction of the Tokyo ETS. The impact of the Saitama ETS on energy consumption was not statistically confirmed based on our samples. Additional studies are needed to identify the different impacts of the ETSs between Tokyo and Saitama. We also found that Japan has been experiencing long-term decreasing trends in the number of manufacturing facilities and the volume of fossil fuel consumption, which may reduce Japanese CO2 emissions in the long run.
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Тези доповідей конференцій з теми "Switching Transition"

1

Chan, Yuen-Chuen, and Kunio Tada. "Polarization Independent Optical Modulation with Tensile-Strained GaAs-InAIAs Quantum Wells grown on GaAs Substrate." In Photonics in Switching. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/ps.1993.pmb2.1.

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Large field-induced optical absorption and refractive index variations through the quantum confined Stark effect in quantum well structures have prompted the development of many high performance compact optical modulating devices1). However, several shortcomings are present and one of them is a strong polarization dependent characteristic in lattice-matched systems2). This is due to the fact that the dipole moments of electron-heavy/light hole transitions show a strong polarization dependence, such that while TE mode light, with the electric vector parallel to the quantum well layers, interacts with both heavy and light hole transitions, only electron-light hole transitions are involved in the TM mode polarization, where the electric vector is perpendicular to the quantum well layers3). Moreover, in an unstrained quantum well, the valence bands for the heavy and light holes are degenerate and hence the electron-heavy hole transition always lead the electron-light hole transition at the absorption edge due to the heavy hole’s larger effective mass. As a result, there exists a large difference in the optical absorption and refractive index variation at the absorption edge between the TE and TM mode polarizations.
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2

Rannow, Michael B., and Perry Y. Li. "Soft Switching Approach to Reducing Transition Losses in an On/Off Hydraulic Valve." In ASME 2009 Dynamic Systems and Control Conference. ASMEDC, 2009. http://dx.doi.org/10.1115/dscc2009-2617.

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A method for significantly reducing the losses associated with an on/off controlled hydraulic system is proposed. There has been a growing interest in the use of on/off valves to control hydraulic systems as a means of improving system efficiency. While on/off valves are efficient when they are fully open or fully closed, a significant amount of energy can be lost in throttling as the valve transitions between the two states. A soft switching approach is proposed as a method of eliminating the majority of these transition losses. The operating principle of soft switching is that fluid can temporarily flow through a check valve or into a small chamber while valve orifices are partially closed. The fluid can then flow out of the chamber once the valve has fully transitioned. Thus, fluid flows through the valve only when it is in its most efficient fully open state. A model of the system is derived and simulated, with results indicating that the soft switching approach can reduce transition and compressibility losses by 79%, and total system losses by 66%. Design equations are also derived. The soft switching approach has the potential to improve the efficiency of on/off controlled systems and is particularly important as switching frequencies are increased. The soft switching approach will also facilitate the use of slower on/off valves for effective on/off control; in simulation, a valve with soft switching matched the efficiency an on/off valve that was 5 times faster.
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3

Tsai, Chin-Chun, Yi-Chi Lee, and Hsiang-Chen Chui. "All-optical switching using cesium two-photon transition." In 2013 6th International Conference on Advanced Infocomm Technology (ICAIT). IEEE, 2013. http://dx.doi.org/10.1109/icait.2013.6621567.

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4

Magyari-Köpe, B., and Y. Nishi. "Resistive Switching in Transition Metal Oxide ReRAM Devices." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.b-7-1.

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5

Gorzelic, Patrick, Prasad Shingne, Jason Martz, Anna Stefanopoulou, Jeff Sterniak, and Li Jiang. "A Low-Order HCCI Model Extended to Capture SI-HCCI Mode Transition Data With Two-Stage Cam Switching." In ASME 2014 Dynamic Systems and Control Conference. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/dscc2014-6275.

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A low-order homogeneous charge compression ignition (HCCI) combustion model to support model-based control development for spark ignition (SI)/HCCI mode transitions is presented. Emphasis is placed on mode transition strategies wherein SI combustion is abruptly switched to recompression HCCI combustion through a change of the cam lift and opening of the throttle, as is often employed in studies utilizing two-stage cam switching devices. The model is parameterized to a steady-state dataset which considers throttled operation and significant air-fuel ratio variation, which are pertinent conditions to two-stage cam switching mode transition strategies. Inspection and simulation of transient SI to HCCI (SI-HCCI) mode transition data shows that the extreme conditions present when switching from SI to HCCI can cause significant prediction error in the combustion performance outputs even with the model’s adequate steady-state fit. When a correction factor related to residual gas temperature is introduced to account for these extreme conditions, it is shown that the model reproduces transient performance output time histories in SI-HCCI mode transition data. The model is thus able to capture steady-state data as well as transient SI-HCCI mode transition data while maintaining a low-order cycle to cycle structure, making it tractable for model-based control of SI-HCCI mode transitions.
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6

Wang, Feiling, Gene H. Haertling, and Kewen K. Li. "Photo-Activated Phase Transition In Antiferroelectric Thin Films For Optical Switching And Storage*." In Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/ods.1994.tud5.

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An electric field induced antiferroelectric (AFE)-to-ferroelectric (FE) phase transition in lead zirconate titanate (PZT) thin films was shown to produce a digital birefringent change in the materials. Such field-induced AFE-to-FE phase transitions may be influenced by the interface between the PZT thin films and certain electrode materials. It has been observed that soft-ultraviolet (UV) illumination to PZT thin films effectively lift the interfacial suppression to the phase transition. Therefore, soft-UV light may be used as a writing beam to change the polarization state of the PZT thin films via the photo-activated AFE-to-FE phase transition.
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7

Woodward, T. K., B. Tell, W. H. Knox, M. T. Asom, and J. B. Stark. "Low-Responsivity GaAs/AlAs Asymmetric Fabry-Perot Modulators." In Photonics in Switching. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/ps.1993.sps99.

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We find that proton-implanted pin AlAs/GaAs asymmetric Fabry-Perot multiple quantum well modulators exhibit suppressed photocurrent responsivity while maintaining good modulation performance. We attribute this to a beneficial effect of the cavity resonance on an otherwise broadened exciton transition. We find photocurrent responsivity in devices implanted to 1 × 1013cm–2 to be reduced by a factor of 57 from the unimplanted case. Asymmetric self-electro-optic effect devices having significant gain (28) and output contrast ratio (8) are demonstrated.
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8

Lee, Jeremy, and Mohammad Tehranipoor. "LS-TDF: Low-Switching Transition Delay Fault Pattern Generation." In 26th IEEE VLSI Test Symposium (vts 2008). IEEE, 2008. http://dx.doi.org/10.1109/vts.2008.48.

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9

Riazmontazer, Hossein, Arash Rahnamaee, Alireza Mojab, Siamak Mehrnami, Sudip K. Mazumder, and Milos Zefran. "Closed-loop control of switching transition of SiC MOSFETs." In 2015 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2015. http://dx.doi.org/10.1109/apec.2015.7104438.

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10

Maniv, Eran. "Electrical switching in a magnetically intercalated transition metal dichalcogenide." In Spintronics XIII, edited by Henri-Jean M. Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2020. http://dx.doi.org/10.1117/12.2567451.

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Звіти організацій з теми "Switching Transition"

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Misas A., Martha, and María Teresa Ramírez-Giraldo. Colombian economic growth under Markov switching regimes with endogenous transition probabilities. Bogotá, Colombia: Banco de la República, December 2006. http://dx.doi.org/10.32468/be.425.

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2

Yılmaz, Fatih. Understanding the Dynamics of the Renewable Energy Transition: The Determinants and Future Projections Under Different Scenarios. King Abdullah Petroleum Studies and Research Center, May 2022. http://dx.doi.org/10.30573/ks--2021-dp25.

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The global energy system’s current structure has severe environmental consequences that necessitate an urgent transformation toward more sustainable alternatives. Besides many available mitigation actions, such as enhancing energy efficiency, deploying nuclear energy, switching fuels and adopting carbon capture technologies, renewable energy (RE) has been the most widely applied one in many countries, especially for the power sector. The average country-level share of non-hydroelectric renewable energy (NhRE) in power generation rose sixfold over the last two decades, from less than 1% in 2000 to roughly 6% in 2018. Despite its wide application, significant heterogeneity exists in the RE transition across countries.
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3

Milovanovic, N., D. W. Blundell, and J. W. G. Turner. Transition Quality Between Spark Ignition and Homogeneous Charge Compression Ignition Modes Using Two Different VVT Strategies: Cam Profile Switching and Phasing Strategy Versus Fully Variable Valve Train Strategy. Warrendale, PA: SAE International, May 2005. http://dx.doi.org/10.4271/2005-08-0159.

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