Добірка наукової літератури з теми "Switching Transition"
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Статті в журналах з теми "Switching Transition"
Malinenko, V. P., L. A. Aleshina, A. L. Pergament, and G. V. Germak. "Switching Effects and Metal−Insulator Transition in Manganese Oxide." Journal on Selected Topics in Nano Electronics and Computing 1, no. 1 (December 2013): 44–50. http://dx.doi.org/10.15393/j8.art.2013.3005.
Повний текст джерелаYan, Zhongna, Dou Zhang, Xuefan Zhou, He Qi, Hang Luo, Kechao Zhou, Isaac Abrahams, and Haixue Yan. "Silver niobate based lead-free ceramics with high energy storage density." Journal of Materials Chemistry A 7, no. 17 (2019): 10702–11. http://dx.doi.org/10.1039/c9ta00995g.
Повний текст джерелаHiggins, Matthew L., and Frank Ofori-Acheampong. "A Markov Regime-Switching Model with Time-Varying Transition Probabilities for Identifying Asset Price Bubbles." International Journal of Economics and Finance 10, no. 4 (March 3, 2018): 1. http://dx.doi.org/10.5539/ijef.v10n4p1.
Повний текст джерелаHan, Xiao, Ying Hui Gao, Yao Hong Sun, and Ping Yan. "An Electronic Model of Capacitor Charging Power Supply Considering Transient Switching Interference." Advanced Materials Research 706-708 (June 2013): 1738–41. http://dx.doi.org/10.4028/www.scientific.net/amr.706-708.1738.
Повний текст джерелаShrestha, Ramesh, Yuxuan Luan, Sunmi Shin, Teng Zhang, Xiao Luo, James S. Lundh, Wei Gong, et al. "High-contrast and reversible polymer thermal regulator by structural phase transition." Science Advances 5, no. 12 (December 2019): eaax3777. http://dx.doi.org/10.1126/sciadv.aax3777.
Повний текст джерелаCastenschiold, R. "Closed-transition switching of essential loads." IEEE Transactions on Industry Applications 25, no. 3 (1989): 403–7. http://dx.doi.org/10.1109/28.31209.
Повний текст джерелаSawa, Akihito. "Resistive switching in transition metal oxides." Materials Today 11, no. 6 (June 2008): 28–36. http://dx.doi.org/10.1016/s1369-7021(08)70119-6.
Повний текст джерелаTIAN, Shijun, Xifan WANG, Xiuli WANG, Chengcheng SHAO, and Rong YE. "Network transition security for transmission switching." Journal of Modern Power Systems and Clean Energy 7, no. 5 (September 2019): 1105–14. http://dx.doi.org/10.1007/s40565-019-0562-1.
Повний текст джерелаRamesh, K., Pumlianmunga, R. Venkatesh, N. Naresh, and E. S. R. Gopal. "Phase Change Properties of Chalcogenide Glasses - Some Interesting Observations." Key Engineering Materials 702 (July 2016): 37–42. http://dx.doi.org/10.4028/www.scientific.net/kem.702.37.
Повний текст джерелаDavis, Peter. "Adaptive Mode Selection Using On–Off Switching of Chaos." International Journal of Bifurcation and Chaos 08, no. 08 (August 1998): 1671–74. http://dx.doi.org/10.1142/s0218127498001339.
Повний текст джерелаДисертації з теми "Switching Transition"
Alsindi, Wassim Zuhair. "Solvent based switching of photophysical properties of transition metal complexes." Thesis, University of Nottingham, 2007. http://eprints.nottingham.ac.uk/13786/.
Повний текст джерелаTrapatseli, Maria. "Doping controlled resistive switching dynamics in transition metal oxide thin films." Thesis, University of Southampton, 2018. https://eprints.soton.ac.uk/423702/.
Повний текст джерелаNishi, Yusuke. "Nonpolar Resistive Switching Based on Quantized Conductance in Transition Metal Oxides." Kyoto University, 2019. http://hdl.handle.net/2433/242544.
Повний текст джерелаChoi, Jae-Young. "Analysis of Inductor-Coupled Zero-Voltage-Transition Converters." Diss., Virginia Tech, 2001. http://hdl.handle.net/10919/28537.
Повний текст джерелаPh. D.
Bertoni, Roman. "Ultrafast photo-switching of spin crossover crystals : coherence and cooperativity." Phd thesis, Université Rennes 1, 2013. http://tel.archives-ouvertes.fr/tel-01016162.
Повний текст джерелаGonzalez, Rosillo Juan Carlos. "Volume resistive switching in metallic perovskite oxides driven by the metal-Insulator transition." Doctoral thesis, Universitat Autònoma de Barcelona, 2017. http://hdl.handle.net/10803/405305.
Повний текст джерелаStrongly correlated perovskite oxides are a class of materials with fascinating intrinsic physical functionalities due to the interplay of charge, spin, orbital ordering and lattice effects. The exotic phenomena arising from these competing degrees of freedom include superconductivity, ferromagnetism, ferroelectricity and metal-insulator transitions, among others. The use of these exotic phenomena in a new generation of devices with new and enhanced functionalities is continuing inspiring the research community. In this sense, Resistive-Random Access Memories (RRAM) are one of the most promising candidates to win the race towards the universal memory of the future, which could overcome the limitations of actual technologies (Flash and Dynamic-RAM), due to their excellent properties in terms of scalability, endurance, retention and switching speeds. They are based on the Resistive Switching effect (RS), where the application of an electric field produces a reversible, non-volatile change in the resistance between two or more resistive states. This phenomenon has been observed in a large variety of oxide materials, where the motion of oxygen is widely accepted to play a key role in their outstanding properties. However, the exact mechanism governing this effect is material-dependent and for some of them it is still far to be understood. This lack of understanding is actually one of the main bottlenecks preventing the widespread use of this technology. In this thesis, we present a novel Resistive Switching mechanism based on the Metal-Insulator Transition (MIT) in metallic perovskite oxides with strong electron electron interaction. We analyse the RS behaviour of three different families of metallic perovskites: La1-xSrxMnO3, YBa2Cu3O7-δ and RENiO3 and demonstrate that the MIT of these mixed electronic-ionic conductors can be tuned upon the application of an electric field, being able to transform the entire bulk volume. This volume RS is different in nature from interfacial or filamentary type and opens new possibilities of robust device design. Thorough nanoscale electrical characterization of the RS effect in these systems has been performed by means of Conductive-Atomic Force Microscopy (C-AFM). Scanning Tunnelling Spectroscopy (STS) and temperature-dependent transport measurements were performed in the different resistive states to get insight into their electronic features. The nanoscale memristive behaviour of these systems is successfully reproduced at a micrometric scale with W-Au tips in probe station experiments. Using this approach, atmosphere dependent measurements were undertaken, where oxygen exchange with the ambience is strongly evidenced. In addition, we present a proof-of-principle result from a 3-Terminal configuration where the RS effect is applied at the gate of the device. In the particular case of superconducting YBa2Cu3O7-δ films, we have studied the influence of high resistance areas, which are embedded in the material, on the superconducting transport properties enabling vortex pinning modification and paving the way towards novel reconfigurable vortex pinning sites. We interpret the RS results of these strongly correlated systems in terms of a Mott volume transition, that we believe to be of general validity for metallic perovskite complex oxides. We have verified that strongly correlated metallic perovskite oxides are a unique class of materials very promising for RS applications due to its intrinsic MIT properties that boosts a robust volumetric resistive switching effect. This thesis settles down the framework to understand the RS effect in these strongly correlated pervoskites, which could eventually lead to a new generation of devices exploiting the intrinsic MIT of these systems.
Chukmaitova, Dariga. "Sector-Switching in Transition Economies: A Case Study of Kazakhstan's Health Care Sector." Scholarship @ Claremont, 2011. http://scholarship.claremont.edu/cgu_etd/20.
Повний текст джерелаOkumu, Emmanuel Latim. "Non-linear prediction in the presence of macroeconomic regimes." Thesis, Uppsala universitet, Statistiska institutionen, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-297222.
Повний текст джерелаWang, Ge. "Phase switching behaviour in lead-free Na0.5Bi0.5TiO3-based ceramics." Thesis, University of Manchester, 2017. https://www.research.manchester.ac.uk/portal/en/theses/phase-switching-behaviour-in-leadfree-na05bi05tio3based-ceramics(267b315d-3757-4865-9f88-5eeed76d61c4).html.
Повний текст джерелаLandrock, Ruth Christine [Verfasser]. "Spatially resolved analysis of resistive switching in transition metal oxide thin films / Ruth Christine Landrock." Aachen : Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen, 2011. http://d-nb.info/1018206884/34.
Повний текст джерелаКниги з теми "Switching Transition"
Diebold, Francis X. Regime switching with time-varying transition probabilities. Philadelphia: Federal Reserve Bank of Philadelphia, Economic Research Division, 1993.
Знайти повний текст джерелаThe Chinese road to high technology: A study of telecommunications switching technology in the economic transition. New York: St. Martin's Press, 1999.
Знайти повний текст джерелаOffice, General Accounting. Telecommunications: Additional federal efforts could help advance digital television transition : report to the ranking minority member, Subcommittee on Telecommunications and the Internet, Committee on Energy and Commerce, House of Representatives. [Washington, D.C.]: General Accounting Office (441 G St. NW, Room LM, Washington, 20548), 2002.
Знайти повний текст джерелаSwitching Sides: Making the Transition from Obedience to Agility. Taylor Trade Publishing, 1999.
Знайти повний текст джерелаLane, Jeffrey. Code Switching. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780199381265.003.0003.
Повний текст джерелаShen, Xiaobai. Chinese Road to High Technology: Telecommunications Switching Technology in the Economic Transition. Palgrave Macmillan, 2014.
Знайти повний текст джерелаShen, Xiaobai. Chinese Road to High Technology: Telecommunications Switching Technology in the Economic Transition. Palgrave Macmillan Limited, 1999.
Знайти повний текст джерелаShen, X. Chinese Road to High Technology: Telecommunications Switching Technology in the Economic Transition. Palgrave Macmillan, 1999.
Знайти повний текст джерелаThe Art Of Switching Up: A Simple guide to a profitable transition from gown to town. Nigeria: Exude Communications, 2019.
Знайти повний текст джерелаBao, Yun, Carl Chiarella, and Boda Kang. Particle Filters for Markov-Switching Stochastic Volatility Models. Edited by Shu-Heng Chen, Mak Kaboudan, and Ye-Rong Du. Oxford University Press, 2018. http://dx.doi.org/10.1093/oxfordhb/9780199844371.013.9.
Повний текст джерелаЧастини книг з теми "Switching Transition"
Wong, Franklin J., and Shriram Ramanathan. "Electrical Transport in Transition Metal Oxides." In Resistive Switching, 165–96. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2016. http://dx.doi.org/10.1002/9783527680870.ch6.
Повний текст джерелаXiao, Huafeng, Ruibin Wang, Chenhui Niu, Yun Liu, and Kairong Qian. "Zero-Current-Transition TLIs with Switching-Loss-Free." In CPSS Power Electronics Series, 25–52. Singapore: Springer Nature Singapore, 2022. http://dx.doi.org/10.1007/978-981-19-3038-6_3.
Повний текст джерелаIwai, S., Y. Okimoto, M. Ono, H. Matsuzaki, A. Maeda, H. Kishida, H. Okamoto, and Y. Tokura. "Ultrafast insulator-to-metal switching by photoinduced Mott transition." In Springer Series in Chemical Physics, 340–42. Berlin, Heidelberg: Springer Berlin Heidelberg, 2005. http://dx.doi.org/10.1007/3-540-27213-5_105.
Повний текст джерелаBecker, M. F., A. B. Buckman, R. M. Walser, T. Lépine, P. Georges, and A. Brun. "Femtosecond Switching of the Solid-State Phase Transition in VO2." In Springer Series in Chemical Physics, 320–21. Berlin, Heidelberg: Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-85176-6_115.
Повний текст джерелаShakouri, A., I. Gravé, Y. Xu, and A. Yariv. "Multi λ Controlled Operation of Quantum Well IR Detectors Using Electric Field Switching and Rearrangement." In Quantum Well Intersubband Transition Physics and Devices, 135–50. Dordrecht: Springer Netherlands, 1994. http://dx.doi.org/10.1007/978-94-011-1144-7_11.
Повний текст джерелаLinne, Thomas. "A Markov Switching Model of Stock Returns: An Application to the Emerging Markets in Central and Eastern Europe." In East European Transition and EU Enlargement, 371–79. Heidelberg: Physica-Verlag HD, 2002. http://dx.doi.org/10.1007/978-3-642-57497-9_23.
Повний текст джерелаSneps-Sneppe, Manfred, Dmitry Namiot, and Maris Alberts. "Channel Switching Protocols Hinder the Transition to IP World: The Pentagon Story." In Lecture Notes in Computer Science, 185–95. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-30859-9_16.
Повний текст джерелаBognár, Tomas, Jozef Komorník, and Magda Komorníková. "Application of Regime-Switching Models of Time Series with Cubic Spline Transition Function." In Soft Methodology and Random Information Systems, 581–88. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-44465-7_72.
Повний текст джерелаGonzalez-Rosillo, Juan Carlos, Rafael Ortega-Hernandez, Júlia Jareño-Cerulla, Enrique Miranda, Jordi Suñe, Xavier Granados, Xavier Obradors, Anna Palau, and Teresa Puig. "Volume Resistive Switching in Metallic Perovskite Oxides Driven by the Metal-Insulator Transition." In Electronic Materials: Science & Technology, 289–310. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-42424-4_12.
Повний текст джерелаYajima, Naonari, Toshi H. Arimura, and Taisuke Sadayuki. "Energy Consumption in Transition: Evidence from Facility-Level Data." In Economics, Law, and Institutions in Asia Pacific, 129–50. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-6964-7_8.
Повний текст джерелаТези доповідей конференцій з теми "Switching Transition"
Chan, Yuen-Chuen, and Kunio Tada. "Polarization Independent Optical Modulation with Tensile-Strained GaAs-InAIAs Quantum Wells grown on GaAs Substrate." In Photonics in Switching. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/ps.1993.pmb2.1.
Повний текст джерелаRannow, Michael B., and Perry Y. Li. "Soft Switching Approach to Reducing Transition Losses in an On/Off Hydraulic Valve." In ASME 2009 Dynamic Systems and Control Conference. ASMEDC, 2009. http://dx.doi.org/10.1115/dscc2009-2617.
Повний текст джерелаTsai, Chin-Chun, Yi-Chi Lee, and Hsiang-Chen Chui. "All-optical switching using cesium two-photon transition." In 2013 6th International Conference on Advanced Infocomm Technology (ICAIT). IEEE, 2013. http://dx.doi.org/10.1109/icait.2013.6621567.
Повний текст джерелаMagyari-Köpe, B., and Y. Nishi. "Resistive Switching in Transition Metal Oxide ReRAM Devices." In 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.b-7-1.
Повний текст джерелаGorzelic, Patrick, Prasad Shingne, Jason Martz, Anna Stefanopoulou, Jeff Sterniak, and Li Jiang. "A Low-Order HCCI Model Extended to Capture SI-HCCI Mode Transition Data With Two-Stage Cam Switching." In ASME 2014 Dynamic Systems and Control Conference. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/dscc2014-6275.
Повний текст джерелаWang, Feiling, Gene H. Haertling, and Kewen K. Li. "Photo-Activated Phase Transition In Antiferroelectric Thin Films For Optical Switching And Storage*." In Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/ods.1994.tud5.
Повний текст джерелаWoodward, T. K., B. Tell, W. H. Knox, M. T. Asom, and J. B. Stark. "Low-Responsivity GaAs/AlAs Asymmetric Fabry-Perot Modulators." In Photonics in Switching. Washington, D.C.: Optica Publishing Group, 1993. http://dx.doi.org/10.1364/ps.1993.sps99.
Повний текст джерелаLee, Jeremy, and Mohammad Tehranipoor. "LS-TDF: Low-Switching Transition Delay Fault Pattern Generation." In 26th IEEE VLSI Test Symposium (vts 2008). IEEE, 2008. http://dx.doi.org/10.1109/vts.2008.48.
Повний текст джерелаRiazmontazer, Hossein, Arash Rahnamaee, Alireza Mojab, Siamak Mehrnami, Sudip K. Mazumder, and Milos Zefran. "Closed-loop control of switching transition of SiC MOSFETs." In 2015 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2015. http://dx.doi.org/10.1109/apec.2015.7104438.
Повний текст джерелаManiv, Eran. "Electrical switching in a magnetically intercalated transition metal dichalcogenide." In Spintronics XIII, edited by Henri-Jean M. Drouhin, Jean-Eric Wegrowe, and Manijeh Razeghi. SPIE, 2020. http://dx.doi.org/10.1117/12.2567451.
Повний текст джерелаЗвіти організацій з теми "Switching Transition"
Misas A., Martha, and María Teresa Ramírez-Giraldo. Colombian economic growth under Markov switching regimes with endogenous transition probabilities. Bogotá, Colombia: Banco de la República, December 2006. http://dx.doi.org/10.32468/be.425.
Повний текст джерелаYılmaz, Fatih. Understanding the Dynamics of the Renewable Energy Transition: The Determinants and Future Projections Under Different Scenarios. King Abdullah Petroleum Studies and Research Center, May 2022. http://dx.doi.org/10.30573/ks--2021-dp25.
Повний текст джерелаMilovanovic, N., D. W. Blundell, and J. W. G. Turner. Transition Quality Between Spark Ignition and Homogeneous Charge Compression Ignition Modes Using Two Different VVT Strategies: Cam Profile Switching and Phasing Strategy Versus Fully Variable Valve Train Strategy. Warrendale, PA: SAE International, May 2005. http://dx.doi.org/10.4271/2005-08-0159.
Повний текст джерела