Готові списки джерел за темами / Surface Activated Bonding

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Добірка наукової літератури з теми "Surface Activated Bonding"

Автор: Grafiati
Опубліковано: 19 жовтня 2024

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Статті в журналах з теми "Surface Activated Bonding"

1

Takeuchi, Kai, Junsha Wang, Beomjoon Kim, Tadatomo Suga, and Eiji Higurashi. "Room temperature bonding of Au assisted by self-assembled monolayer." Applied Physics Letters 122, no. 5 (January 30, 2023): 051603. http://dx.doi.org/10.1063/5.0128187.

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Анотація:
The surface activated bonding (SAB) technique enables room temperature bonding of metals, such as Au, by forming metal bonds between clean and reactive surfaces. However, the re-adsorption on the activated surface deteriorates the bonding quality, which limits the applicability of SAB for actual packaging processes of electronics. In this study, we propose and demonstrate the prolongation of the surface activation effect for room temperature bonding of Au by utilizing a self-assembled monolayer (SAM) protection. While the bonding without SAM fails after exposure of the activated Au surface to ambient air, the room temperature bonding is achieved using SAM protection even after 100 h exposure. The surface analysis reveals that the clean and activated Au surface is protected from re-adsorption by SAM. This technique will provide an approach of time-independent bonding of Au at room temperature.
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2

Lomonaco, Quentin, Karine Abadie, Jean-Michel Hartmann, Christophe Morales, Paul Noël, Tanguy Marion, Christophe Lecouvey, Anne-Marie Papon, and Frank Fournel. "Soft Surface Activated Bonding of Hydrophobic Silicon Substrates." ECS Meeting Abstracts MA2023-02, no. 33 (December 22, 2023): 1601. http://dx.doi.org/10.1149/ma2023-02331601mtgabs.

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Анотація:
Surface Activated Bonding (SAB) is interesting for strong silicon to silicon bonding at room temperature without any annealing needed, afterwards (1). Although it is a well-known technique, the activation step, in particular, is scarcely documented. This paper offers insights about the impact of soft activation parameters on the amorphous region at the bonding interface. In addition, the adherence energy of hydrophobic silicon bonding with SAB is quantified to better understand bonding mechanisms. With very low dose and acceleration activation parameters, the surface preparation prior to bonding becomes of paramount importance. Indeed, the silicon native oxide is typically removed during the activation step. The thin amorphous silicon region is a side effect of this singular surface preparation(2). In order to work around this potential roadblock, we used instead hydrophobic surface preparation to remove the native oxide, before entering into the activation step. Two types of preparation were evaluated in this study. First, a standard “HF-Last” chemical treatment was used on standard silicon wafers. This treatment removed the silicon native oxide and passivated the surface with Si-H and, to a lesser extent, Si-F bonds (3). We otherwise used epitaxy-reconstructed silicon wafers with fully hydrophobic surfaces (4). Silicon native oxide was removed thanks to an ultra-pure H2 bake at 1100°C, 20 Torr for 2 minutes in an epitaxy chamber. Then, several tens of nm of Silicon were deposited at 950°C to obtain, after another H2 bake, a silicon surface fully passivated by hydrogen atoms with atomically smooth terraces and mono-atomic step edges. Our EVG®ComBond® bonding tool, operating under ultra-high vacuum (UHV), is equipped with an accelerated argon ion beam to perform the activation step. The softest functional settings, on our set up, are 50V (acceleration) and 26 mA (dose). After beam initialization, the two sets of substrates pass through the activation chamber. Activated substrates are then transferred to the bonding chamber within 5 minutes of handling. The exposure time in the activation chamber was evaluated, the aim being to remove adsorbed hydrogen atoms on the silicon surface without any amorphous silicon generation. Different characterization techniques such as transmission electron microscopy or FTIR-MIR were used to quantify the amorphous layer formation and the potential Si-H bonds remaining (after activation). The adherence energy of the bonded pair was measured by a double cantilever beam method under prescribed displacement control in anhydrous atmosphere (5). Figure 1 shows the adherence energy (Gc=2γc) in mJ/m² as a function of activation exposure time with soft activation parameters for both wafer preparations. The 0s reference bonding was conducted without passing through the activation module. We then had very low adherence energies, around 50 mJ/m², as expected for standard hydrophobic silicon wafer bonding under UHV (6). Upon Ar+ exposure, behaviors were very different depending on surface preparation. The adherence energy barely increased with the Ar+ exposure time for “HF-Last” surfaces. Meanwhile, even 1s of exposure to Ar+ had a definite impact on the adherence energy of epi-reconstructed, atomically smooth silicon surfaces, which was definitely higher. The maximum difference between both wafer preparations occurred for 30 up to 60 seconds exposure times. This indicate a change in the bonding mechanism as the comparatively high roughness of the “HF-Last” silicon wafer started to be counter-balanced by activation. The experimental set up, the manufacturing process, as well as further characterizations will be presented. Cross-sectional TEM imaging of the bonding interface, FTIR-MIR and AFM measurements after surface preparation will help us better understand the specificities of such soft activation process on the SAB of hydrophobic surfaces. The impact of the amorphous silicon layer on bonding will be discussed. Suga T et al. STRUCTURE OF A1-A1 A N D A1-Si3N4 INTERFACES BONDED AT ROOM TEMPERATURE BY MEANS OF THE SURFACE ACTIVATION METHOD. Acta Metallurgica et Materialia 1992. Takagi H et al. Surface activated bonding of silicon wafers at room temperature. Appl Phys Lett. 1996. Abbadie A et al. Low thermal budget surface preparation of Si and SiGe. Appl Surf Sci. 2004. Sordes D et al. Nanopackaging of Si(100)H Wafer for Atomic-Scale Investigations. 2017. Maszara WP et al. Bonding of silicon wafers for silicon‐on‐insulator. J Appl Phys. 15 nov 1988;64(10):4943-50. Tong QY et al. The Role of Surface Chemistry in Bonding of Standard Silicon Wafers. J Electrochem Soc. 1997. Figure 1
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3

ODA, Tomohiro, Tomoyuki ABE, and Isao KUSUNOKI. "Wafer Bonding by Surface Activated Method." Shinku 49, no. 5 (2006): 310–12. http://dx.doi.org/10.3131/jvsj.49.310.

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4

Lomonaco, Quentin, Karine Abadie, Jean-Michel Hartmann, Christophe Morales, Paul Noël, Tanguy Marion, Christophe Lecouvey, Anne-Marie Papon, and Frank Fournel. "Soft Surface Activated Bonding of Hydrophobic Silicon Substrates." ECS Transactions 112, no. 3 (September 29, 2023): 139–45. http://dx.doi.org/10.1149/11203.0139ecst.

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Анотація:
Surface Activated Bonding (SAB) is interesting for strong silicon to silicon bonding at room temperature without any annealing needed, afterwards. This technique has been recognized by the scientific community for more than two decades now and was used for numerous reviewed applications. Although it is a well-known technique, the activation step, in particular, is scarcely documented. This paper offers insights about the impact of soft activation parameters on the amorphous region at the bonding interface. In addition, the adherence energy of hydrophobic silicon after SAB bonding is quantified, to better understand bonding mechanisms. Soft activation parameters on hydrophobic silicon substrates yield exceptionally thin bonding interfaces with acceptable bonding energy at room temperature. According to cross-sectional Transmission Electron Microscopy imaging, a 0.53 nm thick amorphous silicon interface was achieved with an adherence energy of 1337 ± 137 J/m² measured by the Double Cantilever Beam method.
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5

Yang, Song, Ningkang Deng, Yongfeng Qu, Kang Wang, Yuan Yuan, Wenbo Hu, Shengli Wu, and Hongxing Wang. "Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding." Materials 15, no. 9 (April 25, 2022): 3115. http://dx.doi.org/10.3390/ma15093115.

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Анотація:
In order to optimize the process parameters of Si-Si wafer direct bonding at room temperature, Si-Si surface activated bonding (SAB) was performed, and the effect of the argon ion beam current for surface activation treatment on the Si-Si bonding quality was investigated. For the surface activation under the argon ion beam irradiation for 300 s, a smaller ion beam current (10~30 mA) helped to realize a lower percentage of area covered by voids and higher bonding strength. Especially with the surface activation under 30 mA, the bonded Si-Si specimen obtained the highest bonding quality, and its percentage of area covered by voids and bonding strength reached <0.2% and >7.62 MPa, respectively. The transmission electron microscopy analyses indicate that there exists an ultrathin amorphous Si interlayer at the Si-Si bonding interface induced by argon ion beam irradiation to Si wafer surfaces, and its thickness increases as the argon ion beam current rises. The investigation results can be used to optimize the SAB process and promote the applications of SAB in the field of semiconductor devices.
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6

Yang, Song, Ningkang Deng, Yongfeng Qu, Kang Wang, Yuan Yuan, Wenbo Hu, Shengli Wu, and Hongxing Wang. "Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding." Materials 15, no. 9 (April 25, 2022): 3115. http://dx.doi.org/10.3390/ma15093115.

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Анотація:
In order to optimize the process parameters of Si-Si wafer direct bonding at room temperature, Si-Si surface activated bonding (SAB) was performed, and the effect of the argon ion beam current for surface activation treatment on the Si-Si bonding quality was investigated. For the surface activation under the argon ion beam irradiation for 300 s, a smaller ion beam current (10~30 mA) helped to realize a lower percentage of area covered by voids and higher bonding strength. Especially with the surface activation under 30 mA, the bonded Si-Si specimen obtained the highest bonding quality, and its percentage of area covered by voids and bonding strength reached <0.2% and >7.62 MPa, respectively. The transmission electron microscopy analyses indicate that there exists an ultrathin amorphous Si interlayer at the Si-Si bonding interface induced by argon ion beam irradiation to Si wafer surfaces, and its thickness increases as the argon ion beam current rises. The investigation results can be used to optimize the SAB process and promote the applications of SAB in the field of semiconductor devices.
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7

Yang, Song, Ningkang Deng, Yongfeng Qu, Kang Wang, Yuan Yuan, Wenbo Hu, Shengli Wu, and Hongxing Wang. "Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding." Materials 15, no. 9 (April 25, 2022): 3115. http://dx.doi.org/10.3390/ma15093115.

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Анотація:
In order to optimize the process parameters of Si-Si wafer direct bonding at room temperature, Si-Si surface activated bonding (SAB) was performed, and the effect of the argon ion beam current for surface activation treatment on the Si-Si bonding quality was investigated. For the surface activation under the argon ion beam irradiation for 300 s, a smaller ion beam current (10~30 mA) helped to realize a lower percentage of area covered by voids and higher bonding strength. Especially with the surface activation under 30 mA, the bonded Si-Si specimen obtained the highest bonding quality, and its percentage of area covered by voids and bonding strength reached <0.2% and >7.62 MPa, respectively. The transmission electron microscopy analyses indicate that there exists an ultrathin amorphous Si interlayer at the Si-Si bonding interface induced by argon ion beam irradiation to Si wafer surfaces, and its thickness increases as the argon ion beam current rises. The investigation results can be used to optimize the SAB process and promote the applications of SAB in the field of semiconductor devices.
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8

Suga, Tadatomo, Fengwen Mu, Masahisa Fujino, Yoshikazu Takahashi, Haruo Nakazawa, and Kenichi Iguchi. "Silicon carbide wafer bonding by modified surface activated bonding method." Japanese Journal of Applied Physics 54, no. 3 (January 15, 2015): 030214. http://dx.doi.org/10.7567/jjap.54.030214.

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9

He, Ran, Masahisa Fujino, Akira Yamauchi, and Tadatomo Suga. "Novel hydrophilic SiO2wafer bonding using combined surface-activated bonding technique." Japanese Journal of Applied Physics 54, no. 3 (February 12, 2015): 030218. http://dx.doi.org/10.7567/jjap.54.030218.

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10

SUGA, Tadatomo. "Low Temperature Bonding for 3D Integration-Surface Activated Bonding (SAB)." Hyomen Kagaku 35, no. 5 (2014): 262–66. http://dx.doi.org/10.1380/jsssj.35.262.

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Більше джерел

Дисертації з теми "Surface Activated Bonding"

1

Lomonaco, Quentin. "Etude du collage SAB pour l'élaboration d'hétérostructure." Electronic Thesis or Diss., Université Grenoble Alpes, 2024. http://www.theses.fr/2024GRALY027.

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Анотація:
Les travaux de thèse présentés dans ce manuscrit sont consacrés à l'étude du collage SAB (de l'anglais « Surface Active Bonding ») appliqué à la fabrication d'hétérostructures. Il s’agit d’assemblages de plusieurs matériaux souvent utilisés dans l'optoélectronique et la photonique. Le collage SAB est une technique de collage direct sous ultravide permettant l'adhésion spontanée de deux surfaces sans l’utilisation de colle.Jusqu’à présent, les contraintes mécaniques, résultant des différences de coefficients de dilatation thermique entre les matériaux formant l’hétérostructure, représentent un défi majeur pour la fabrication d’hétérostructures ; mais contrôlées, elles peuvent également être avantageuses pour la fabrication et la qualité des produits finaux.L’approche technologique utilisée dans cette étude se concentre sur la fabrication d'hétérostructures en films minces monocristallins à partir de substrats épais, en utilisant le procédé Smart Cut™ et le collage SAB.Ce travail introduit pour la première fois la possibilité de réaliser des collages à chaud grâce à la technologie de collage SAB, en développant une nouvelle méthode appelée SAHB pour « Surface Active Hot Bonding ». Cette dernière offre la possibilité de contrôler la température lors de l’assemblage, permettant ainsi de gérer les contraintes mécaniques dues aux différences de coefficients d'expansion thermique dans l’hétérostructure. Une application remarquable de cette nouvelle méthode SAHB, mise en oeuvre dans le cadre de ces travaux, est la réalisation de reports de films contraints de germanium monocristallins de plusieurs centaines de nanomètres sur substrats de silicium. La modélisation par éléments finis est utilisée pour comprendre cette technologie de collage SAHB, car elle permet de visualiser les déformations des structures et d'estimer les niveaux de contrainte afin de limiter la casse de l’hétérostructure lors de sa fabrication, tout en maximisant la contrainte stockée dans le film reporté. De plus, l’étude du collage SAHB permet de mettre en évidence la nécessité d’une gestion précise de la température et d’une grande qualité de l'atmosphère de collage pour garantir son efficacité.Cette étude a mené à l’investigation des mécanismes du collage SAB, par des travaux sur l’impact de l’activation sur l’amorphisation l’interface de collage. Les résultats montrent que la seule présence de liaisons pendantes ne suffit pas à expliquer la très forte adhérence des collages SAB standards, mais qu’il est nécessaire que la surface soit suffisamment « malléable » pour permettre aux pointes d'aspérités de s'écraser et aux liaisons pendantes de s'appairer.Les travaux présentés dans ce manuscrit introduisent une nouvelle méthode de collage, le SAHB, et développent la fabrication des premières hétérostructures par cette voie. Cette méthode ouvre de nouvelles perspectives pour la fabrication de structures complexes et la manipulation des contraintes dans les matériaux hétérogènes.Mots clés : Collage direct, collage covalent, collage SAB, collage d’hétérostructures, collage de silicium, collage SAHB, transfert de film, films minces monocristallins
These research work presented in this thesis are dedicated to the study of SAB, "Surface Active Bonding", for the fabrication of heterostructures. These are assemblies of several materials often used in optoelectronics and photonics. SAB bonding is a direct bonding technique under ultrahigh vacuum that enables the spontaneous covalent bonding of two surfaces without glue.To date, mechanical stresses, resulting from differences in thermal expansion coefficients between the materials forming the heterostructure, represent a major challenge for the manufacture of heterostructures; but controlled, they can also be advantageous for the manufacture process and the quality of the final products.The field of studies developed in this study focuses on the fabrication of single-crystal thin-film heterostructures from thick substrates, using the Smart Cut™ process and SAB bonding.This work introduces for the first time the possibility of producing hot bonds using SAB bonding technology, by developing a new method called SAHB for "Surface Active Hot Bonding". The latter offers the opportunity of controlling the temperature during bonding, enabling mechanical stresses due to differences in thermal expansion coefficients in the heterostructure to be managed. One of the main applications of this new SAHB method is that it can be used to transfer strained single-crystal germanium films of several hundred nanometers onto silicon substrates. Finite-element modeling is used to understand this SAHB bonding technology, as it enables structural deformations to be visualized and stress levels to be estimated in order to limit heterostructure breakage during fabrication, while maximizing the stress stored in the transferred film. In addition, the study of SAHB bonding highlights the need for precise temperature management and a high-quality bonding atmosphere to guarantee its effectiveness.This study led to the investigation of SAB bonding mechanisms, with work on the impact of activation on the amorphization of the bonding interface. The results show that the mere presence of dangling bonds is not sufficient to explain the very high adherence of standard SAB, but that it is necessary for the surface to be sufficiently "malleable" to allow asperity tips to crush and dangling bonds to pair.The work presented in this manuscript introduce a new bonding method, the SAHB, and develops the production of the first heterostructures by this route. This method opens up new perspectives for the fabrication of complex structures and the manipulation of stresses in heterogeneous materials.Keywords: Direct bonding, covalent bonding, SAB bonding, heterostructure bonding, silicon bonding, SAHB bonding, film transfer, thin monocrystalline films
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2

Schönström, Linus, Anna Nordh, Anton Strignert, Frida Lemel, Jakob Ekengard, Sofie Wallin, and Zargham Jabri. "A process recipe for bonding a silicone membrane to a plastic substrate." Thesis, Uppsala universitet, Institutionen för teknikvetenskaper, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-201008.

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Анотація:
A spin-cast silicone membrane has been successfully bonded between two injection-molded microstructured plastic discs. This sandwich structure creates a useful platform for mass production of microfluidic systems, provided that the bonds are leakproof. The bonds were achieved by a silicon dioxide coating deposited on the plastic discs by evaporation. This investigation is concerned with the process and the result only, no theory is discussed.
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3

Hu, Hui-Chin, and 胡惠欽. "Improving wafer bonding of dissimilar materials by ozone plasma activated surface." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/93237377683430443514.

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Анотація:
碩士
國立中央大學
機械工程學系
104
Wafer Bonding Techniques has an advantage that can combine wafer with different materials with great bonding interface. It provides convenience and integration for high-tech industry. However, it will exist thermal expansion mismatch between different materials, great thermal stress may cause sample debond even crack after annealing. In this work, we developed wafer bonding techniques to bond Si and GaAs wafers. First, we use ultraviolet/ozone (UVO) plasma to modify the surface of wafers. Second, we compare the wafers in symmetrical bonded structure with asymmetric bonded structure. In result, wafers could bond together in 200℃ after surface activation. Besides, the wafers in symmetrical bonded structure could effectively counteract heat stress even heat to 350 ℃, and it is still not crack.
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Частини книг з теми "Surface Activated Bonding"

1

Suga, Tadatomo. "Recent Progress in Surface Activated Bonding." In Ceramic Microstructures, 385–89. Boston, MA: Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5393-9_36.

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2

Suga, Tadatomo, Toshihiro Itoh, and Matiar R. Howlader. "An 8-inch Wafer Bonding Apparatus with Ultra-High Alignment Accuracy Using Surface Activated Bonding (SAB) Concept." In Transducers ’01 Eurosensors XV, 222–25. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59497-7_52.

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3

Shimoi, Norihiro. "Nonthermal Crystalline Forming of Ceramic Nanoparticles by Non-Equilibrium Excitation Reaction Field of Electron." In Nanocrystals [Working Title]. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.97037.

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In this work, we have discovered a method of forming ZnO thin films with high mobility, high carrier density and low resistivity on plastic (PET) films using non-equilibrium reaction fields, even when the films are deposited without heating, and we have also found a thin film formation technique using a wet process that is different from conventional deposition techniques. The field emission electron-beam irradiation treatment energetically activates the surface of ZnO particles and decomposes each ZnO particles. The energy transfer between zinc ions and ZnO surface and the oxygen present in the atmosphere around the ZnO particles induce the oxidation of zinc. In addition, the ZnO thin films obtained in this study successfully possess high functional thin films with high electrical properties, including high hole mobility of 208.6 cm2/Vs, despite being on PET film substrates. These results contribute to the discovery of a mechanism to create highly functional oxide thin films using a simple two-dimensional process without any heat treatment on the substrate or during film deposition. In addition, we have elucidated the interfacial phenomena and crosslinking mechanisms that occur during the bonding of metal oxide particles, and understood the interfacial physical properties and their effects on the electronic structure. and surface/interface control, and control of higher-order functional properties in metal/ceramics/semiconductor composites, and contribute to the provision of next-generation nanodevice components in a broad sense.
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Тези доповідей конференцій з теми "Surface Activated Bonding"

1

Suga, Tadatomo, and Fengwen Mu. "Surface Activated Bonding Method for Low Temperature Bonding." In 2018 7th Electronic System-Integration Technology Conference (ESTC). IEEE, 2018. http://dx.doi.org/10.1109/estc.2018.8546367.

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2

Wang, Chenxi, Eiji Higurashi, and Tadatomo Suga. "Silicon Wafer Bonding by Modified Surface Activated Bonding Methods." In 6th International Conference on Polymers and Adhesives in Microelectronics and Photonics. Polytronic 2007. IEEE, 2007. http://dx.doi.org/10.1109/polytr.2007.4339133.

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3

Mu, Fengwen, and Tadatomo Suga. "Room temperature GaN bonding by surface activated bonding methods." In 2018 19th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2018. http://dx.doi.org/10.1109/icept.2018.8480574.

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4

Shingo Taniyama, Ying-Hui Wang, Masahisa Fujino, and Tadatomo Suga. "Room temperature wafer bonding using surface activated bonding method." In 2008 IEEE 9th VLSI Packaging Workshop of Japan. IEEE, 2008. http://dx.doi.org/10.1109/vpwj.2008.4762236.

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5

Mu, F., and T. Suga. "Room Temperature GaN Bonding by Surface Activated Bonding Method." In 2018 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2018. http://dx.doi.org/10.7567/ssdm.2018.ps-4-01.

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6

Tsukamoto, Kei, Eiji Higurashi, and Tadatomo Suga. "Evaluation of surface microroughness for surface activated bonding." In 2010 IEEE CPMT Symposium Japan (Formerly VLSI Packaging Workshop of Japan). IEEE, 2010. http://dx.doi.org/10.1109/cpmtsympj.2010.5679979.

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7

Howlader, M. M. R., and T. Suga. "Surface Activated Bonding Method for Flexible Lamination." In 6th International Conference on Polymers and Adhesives in Microelectronics and Photonics. Polytronic 2007. IEEE, 2007. http://dx.doi.org/10.1109/polytr.2007.4339181.

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8

T., Luttermann, Wich T., and Mikczinski M. "Localized Surface Activated Bonding of Nanoscale Objects." In 8th International Conference on Multi-Material Micro Manufacture. Singapore: Research Publishing Services, 2011. http://dx.doi.org/10.3850/978-981-07-0319-6_225.

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9

Higurashi, Eiji, Masao Nakagawa, Tadatomo Suga, and Renshi Sawada. "Surface Activated Flip-Chip Bonding of Laser Chips." In ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/ipack2005-73436.

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This paper reports the results of low-temperature flip-chip bonding of a vertical cavity surface emitting laser (VCSEL) on a micromachined Si substrate. Low temperature bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au electrodes of the VCSEL and Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.
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10

He, Ran, Masahisa Fujino, Tadatomo Suga, and Akira Yamauchi. "Development of combined surface activated bonding (SAB) method for hydrophilic wafer bonding." In 2014 IEEE CPMT Symposium Japan (ICSJ). IEEE, 2014. http://dx.doi.org/10.1109/icsj.2014.7009611.

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