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Добірка наукової літератури з теми "Substrats II-VI"

Автор: Grafiati

Опубліковано: 29 березня 2025

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Статті в журналах з теми "Substrats II-VI"

ZAHN, DIETRICH R. T. "PROBING SURFACES AND INTERFACES WITH OPTICAL TECHNIQUES." Surface Review and Letters 01, no. 04 (December 1994): 421–28. http://dx.doi.org/10.1142/s0218625x94000382.

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The potential of optical techniques for probing semiconductor surfaces and interfaces is discussed using the example of Raman spectroscopy. The surface sensitivity of the technique is demonstrated by the detection of vibrational modes of atomic monolayers on semiconductor substrates, for instance arsenic on silicon(111). The special feature of Raman spectroscopy, namely its chemical sensivity, is illustrated by two examples: the interdiffusion of group III overlayers, e.g., In on the group V substrate Sb and the detection of reacted layers at II–VI/III– V heterointerfaces. The example of II–VI/III–V heteroepitaxy also serves as an example for demonstrating the growth monitoring capabilities of optical techniques.

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Naugle, Jennifer E., Erik R. Olson, Xiaojin Zhang, Sharon E. Mase, Charles F. Pilati, Michael B. Maron, Hans G. Folkesson, Walter I. Horne, Kathleen J. Doane, and J. Gary Meszaros. "Type VI collagen induces cardiac myofibroblast differentiation: implications for postinfarction remodeling." American Journal of Physiology-Heart and Circulatory Physiology 290, no. 1 (January 2006): H323—H330. http://dx.doi.org/10.1152/ajpheart.00321.2005.

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Cardiac fibroblast (CF) proliferation and differentiation into hypersecretory myofibroblasts can lead to excessive extracellular matrix (ECM) production and cardiac fibrosis. In turn, the ECM produced can potentially activate CFs via distinct feedback mechanisms. To assess how specific ECM components influence CF activation, isolated CFs were plated on specific collagen substrates (type I, III, and VI collagens) before functional assays were carried out. The type VI collagen substrate potently induced myofibroblast differentiation but had little effect on CF proliferation. Conversely, the type I and III collagen substrates did not affect differentiation but caused significant induction of proliferation (type I, 240.7 ± 10.3%, and type III, 271.7 ± 21.8% of basal). Type I collagen activated ERK1/2, whereas type III collagen did not. Treatment of CFs with angiotensin II, a potent mitogen of CFs, enhanced the growth observed on types I and III collagen but not on the type VI collagen substrate. Using an in vivo model of myocardial infarction (MI), we measured changes in type VI collagen expression and myofibroblast differentiation after post-MI remodeling. Concurrent elevations in type VI collagen and myofibroblast content were evident in the infarcted myocardium 20-wk post-MI. Overall, types I and III collagen stimulate CF proliferation, whereas type VI collagen plays a potentially novel role in cardiac remodeling through facilitation of myofibroblast differentiation.

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Jones, K. M., F. S. Hasoon, A. B. Swartzlander, M. M. Al-Jassim, T. L. Chu, and S. S. Chu. "The morphology and microstructure of polycrystalline CdTe thin films for solar cell applications." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 2 (August 1992): 1384–85. http://dx.doi.org/10.1017/s0424820100131553.

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Polycrystalline thin films of II-VI semiconductors on foreign polycrystalline (or amorphous) substrates have many applications in optoelectronic devices. In contrast to the extensive studies of the heteroepitaxial growth of compound semiconductors on single-crystal substrates, the nucleation and growth of thin films of II-VI compounds on foreign substrates have received little attention, and the properties of these films are often controlled empirically to optimize device performance. A better understanding of the nucleation, growth, and microstructure will facilitate a better control of the structural and electrical properties of polycrystalline semiconductor films, thereby improving the device characteristics. Cadmium telluride (CdTe) has long been recognized as a promising thin-film photovoltaic material. Under NREL's sponsorship, the University of South Florida has recently developed a record high efficiency (14.6% under global AM1.5 conditions) thin-film CdS/CdTe heterojunction solar cell for potential low-cost photovoltaic applications. The solar cell has the structure:glass (substrate)/SnO2:F/CdS/CdTe/HgTe (contact)The CdS films were grown from an aqueous solution, while the CdTe films were deposited by the closespaced sublimation method.

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Sato, K., Y. Seki, Y. Matsuda, and O. Oda. "Recent developments in II–VI substrates." Journal of Crystal Growth 197, no. 3 (February 1999): 413–22. http://dx.doi.org/10.1016/s0022-0248(98)00739-8.

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Wang, Jiawei, Jiahui Li, Yi Hou, Wei Dai, Ruopeng Xie, Tatiana T. Marquez-Lago, André Leier, et al. "BastionHub: a universal platform for integrating and analyzing substrates secreted by Gram-negative bacteria." Nucleic Acids Research 49, no. D1 (October 21, 2020): D651—D659. http://dx.doi.org/10.1093/nar/gkaa899.

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Abstract Gram-negative bacteria utilize secretion systems to export substrates into their surrounding environment or directly into neighboring cells. These substrates are proteins that function to promote bacterial survival: by facilitating nutrient collection, disabling competitor species or, for pathogens, to disable host defenses. Following a rapid development of computational techniques, a growing number of substrates have been discovered and subsequently validated by wet lab experiments. To date, several online databases have been developed to catalogue these substrates but they have limited user options for in-depth analysis, and typically focus on a single type of secreted substrate. We therefore developed a universal platform, BastionHub, that incorporates extensive functional modules to facilitate substrate analysis and integrates the five major Gram-negative secreted substrate types (i.e. from types I–IV and VI secretion systems). To our knowledge, BastionHub is not only the most comprehensive online database available, it is also the first to incorporate substrates secreted by type I or type II secretion systems. By providing the most up-to-date details of secreted substrates and state-of-the-art prediction and visualized relationship analysis tools, BastionHub will be an important platform that can assist biologists in uncovering novel substrates and formulating new hypotheses. BastionHub is freely available at http://bastionhub.erc.monash.edu/.

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KERN, András, Zsófia SZENTPÉTERY, Károly LILIOM, Éva BAKOS, Balázs SARKADI, and András VÁRADI. "Nucleotides and transported substrates modulate different steps of the ATPase catalytic cycle of MRP1 multidrug transporter." Biochemical Journal 380, no. 2 (June 1, 2004): 549–60. http://dx.doi.org/10.1042/bj20031607.

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The human ABC (ATP-binding cassette) transporter MRP1 (human multidrug-resistance-associated protein 1; ABCC1) is involved in the cellular extrusion of conjugated metabolites and causes multidrug resistance in tumour cells. The transport of substrate molecules by ABC proteins is energized by ATP hydrolysis, performed by two co-operating ABC units. Orthovanadate (Vi), a non-covalent inhibitor of the ABC ATPases, was found to catalyse a photo-oxidative cleavage of various ATP-binding proteins. In the present study, we have identified three Vi-cleavage sites within MRP1, and found that the cleavage reactions were variably modulated by the presence of nucleotides and by transported substrates. We concluded that Vi cleavage of MRP1 at Site I detects conformational changes due to the binding of MgATP. In contrast, Site II could be identified as part of the substrate-modulated catalytic cycle, probably containing an MRP1·MgADP·Vi transition-state-like complex. Cleavage at Site III was modulated by both the binding and hydrolysis of MgATP, in a biphasic pattern, which was also affected by the presence of transported substrates. We detected two different allosteric effects and found that they control two consecutive steps of the MRP1 ATPase catalytic cycle. Nucleotide binding to the low-affinity site accelerated the formation of the pre-hydrolytic intermediate in the other catalytic centre. Interaction of the transporter with its transported substrates stimulated a later reaction of the hydrolytic cycle, the formation of the post-hydrolytic intermediate, which could be detected in both catalytic sites by the experimental strategy used.

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Staudenmann, J. L., R. D. Horning, and R. D. Knox. "Buerger precession camera and overall characterization of thin films and flat-plate crystals." Journal of Applied Crystallography 20, no. 3 (June 1, 1987): 210–21. http://dx.doi.org/10.1107/s0021889887086813.

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A fast simple and non-destructive method is described to provide qualitative structural information for flat-plate crystals and epitaxically grown films. The technique, based upon the Buerger precession camera, produces an easy-to-interpret photograph of the reciprocal space of all the components at once: substrate, film or buffer layer, and/or superlattice. A wide variety of technologically important examples are used to illustrate the technique: a mixture of CdTe phases on (001) Si, an aluminium layer on a (001) Si substrate, (001) Ge epitaxic layers on (001) Si substrates, three combinations of possible orientations of CdTe epitaxic layers on various substrate types, CdTe/ZnTe and other II–VI superlattices on GaAs substrates. In addition, the precession pictures readily reveal the common [111] face-centered cubic twin fault, or stacking disorder, seen in bulk growth methods. This finding may have severe consequences for the electronic mobility and the feasibility of devices fabricated from these composite systems.

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Brockhausen, Inka, Jeremy P. Carver, and Harry Schachter. "Control of glycoprotein synthesis. The use of oligosaccharide substrates and HPLC to study the sequential pathway for N-acetylglucosaminyltransferases I, II, III, IV, V, and VI in the biosynthesis of highly branched N-glycans by hen oviduct membranes." Biochemistry and Cell Biology 66, no. 10 (October 1, 1988): 1134–51. http://dx.doi.org/10.1139/o88-131.

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Glycoproteins isolated from hen oviduct contain highly branched asparagine-linked oligosaccharides (N-glycans). Six N-acetylglucosaminyltransferases (GlcNAc-T I, II, III, IV, V, and VI) are involved in initiating the synthesis of these branches, as indicated below:[Formula: see text]where R is GlcNAcβ1—4(+/−Fucα1—6)GlcNAcAsn-X. HPLC has been used to study the substrate specificities of these GlcNAc-T and the sequential pathways involved in the biosynthesis of highly branched N-glycans in hen oviduct. Oligosaccharides with free reducing GlcNAc termini were prepared from various glycoproteins by hydrazinolysis–re-N-acetylation and used as GlcNAc-T substrates and HPLC standards. Enzyme assay components were separated on AG1 × 8, followed by HPLC on amine-bonded silica columns eluted with acetonitrile–water mixtures. Absorbance at 195 nm and radioactivity of eluted compounds were monitored. Substrates and products were identified by comparison of their retention times with those of oligosaccharides with known structures. Enzyme assay by HPLC is more rapid and convenient than previous GlcNAc-T assays using lectin columns or electrophoresis. Since some substrates yielded multiple products, these could be used to assay more than one GlcNAc-T in the same incubation. GlcNAc-T VI was shown to act on both bisected and nonbisected GlcNAc-terminating tetraantennary oligosaccharide substrates; GlcNAc-T II, IV, and V acted poorly or not at all on bisected substrates. GlcNAc-T V was the only enzyme among the six transferases studied that could be assayed in the absence of Mn2+.

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Witt, Katarzyna, Waldemar Studziński, and Daria Bożejewicz. "Possibility of New Active Substrates (ASs) to Be Used to Prevent the Migration of Heavy Metals to the Soil and Water Environments." Molecules 28, no. 1 (December 22, 2022): 94. http://dx.doi.org/10.3390/molecules28010094.

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This paper aims to propose an alternative to the known permeable reactive barriers (PRBs). PRB is one of the methods, which is a reactive barrier placed below the ground, to clean up contaminated groundwater. New polymer active substrates (ASs) were used to prevent soil contamination by toxic heavy metals. The active substrates consisted of a mixture of poly(vinyl chloride), Aliquat 336, and bis(2-ethylhexyl)adipate, which was applied to the skeleton material (fiberglass or textile). Aliquat 336 was used as a binding agent for metal ions (Cr(VI), Ni(II), Cu(II), Zn(II), Cd(II), and Pb(II)). In contrast with the PRBs, the ASs (from AS-1 to AS-5) were obtained in a simple way using the pouring method. The obtained ASs could be recycled and reused. The active substrates were used for the binding of various metal ions from aqueous solutions and the examined soil. It was found that the active substrate AS-1 decreased the concentrations of nickel, cadmium, and lead by more than 50% and that of chromium by more than 90% in the aqueous solution. High sorption efficiency for chromium and zinc metals (81% and 66%) with the use of AS-2 was also found, owing to which the migration of metals from soil to water can be limited. In the soil environment, active substrate AS-5 with the addition of a plasticizer showed the greatest effectiveness. This solution resulted in a reduction in each tested metal ion of at least 50%, and reductions in cadmium, lead, and copper of over 70%.

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Ernst, K., I. Sieber, M. Neumann-Spallart, M. Ch Lux-Steiner, and R. Könenkamp. "Characterization of II–VI compounds on porous substrates." Thin Solid Films 361-362 (February 2000): 213–17. http://dx.doi.org/10.1016/s0040-6090(99)00836-6.

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Більше джерел

Дисертації з теми "Substrats II-VI"

Melhem, Hassan. "Epitaxial Growth of Hexagonal Ge Planar Layers on Non-Polar Wurtzite Substrates." Electronic Thesis or Diss., université Paris-Saclay, 2025. http://www.theses.fr/2025UPAST011.

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Le silicium et le germanium, qui cristallisent dans la structure cubique du diamant (notée 3C), ont été les piliers de l'industrie électronique grâce à leurs propriétés intrinsèques. Néanmoins, l'ingénierie des phases cristallines métastables a émergé comme une méthode puissante pour ajuster les structures de bande électronique, ouvrant la voie à de nouvelles fonctionnalités tout en maintenant une compatibilité chimique. Notamment, le Ge dans la phase hexagonale 2H présente un gap direct de 0,38 eV. L'alliage SixGe(1-x)-2H présente une émission lumineuse intense avec une longueur d'onde modulable entre 1,8 µm et 3,5 µm, selon la concentration en silicium (40 % à 0 %). Ces propriétés positionnent SixGe(1-x)-2H comme un « matériau miracle» parmi les semi-conducteurs du groupe IV, avec des applications prometteuses dans l'émission lumineuse dans le moyen infrarouge et la détection sur des plateformes en silicium.Malgré les progrès récents, la synthèse de volumes importants de Ge-2H de haute qualité reste un défi. Jusqu'à présent, Le Ge-2H a été synthétisé sous forme de nanodomaines issus de transformations de phase induites par cisaillement, de nanofils cœur/enveloppe et de nanobranches. Ces approches limitent les volumes actifs et la fabrication évolutive de dispositifs. La synthèse de couches planaires de SixGe(1-x)-2H de haute qualité, avec un dopage contrôlé, est essentielle pour permettre une intégration optimale.Cette thèse vise à ouvrir la voie à la synthèse de couches planes de Ge hexagonal en utilisant l'épitaxie en phase vapeur sous ultra-haut vide (UHV-VPE) sur des substrats hexagonaux plan-m du groupe II-VI, tels que CdS-2H et ZnS-4H. Les travaux incluent le développement de techniques de préparation de surface pour les composés II-VI et des études détaillées sur la formation de structures hexagonales dans des matériaux tels que GaAs-4H, ZnS-2H via MOCVD, et le Ge dans les phases hexagonales 2H et 4H.Une étape préliminaire cruciale a consisté à préparer les surfaces des substrats, car leur qualité impacte directement celle des couches épitaxiées. La préparation des surfaces a inclus un polissage mecano-chimique avec une solution de Br2-MeOH pour éliminer les contaminants de surface. Les défis liés aux propriétés thermiques des substrats CdS-2H et ZnS-4H ont été abordés, notamment la désorption des composés II-VI et la formation de « negative whiskers » au-dessus de 500°C.La croissance épitaxiale par UHV-VPE a posé des contraintes de sélectivité sur les substrats II-VI, ce qui a conduit à explorer des configurations alternatives de croissance, telles que l'utilisation de couches buffer. Cette thèse présente la première synthèse d'une couche de GaAs dans la structure hexagonale 4H par épitaxie sur un substrat ZnS-4H plan-m, ainsi qu'une première caractérisation des défauts d'empilement basal dans cette couche. La faisabilité de la synthèse de Ge sur GaAs-4H a également été étudiée. Une part importante du travail a été consacrée à la croissance sur les substrats CdS-2H, démontrant la première couche de Ge avec des régions nanométriques de Ge-2H, offrant une preuve de concept pour la réplication de structures Ge-2H sur des surfaces II-VI sur plan-m. L'optimisation du processus a conduit au développement de couches tampons ZnS-2H sur CdS-2H via MOCVD. Une étude approfondie a montré que la température de croissance impacte fortement la qualité cristalline des substrats CdS. Les couches de ZnS cultivées à 360°C ont révélé une structure hexagonale pure avec une orientation épitaxiale optimale. La relaxation des contraintes s'est produite via des dislocations de réseau à l'interface, en raison des désaccords de maille de 7,63 % et 6,83 % le long des axes a et c, formant des défauts d'empilement basal et prismatique sur les plans {112 ̅0}. Enfin, pour appuyer notre étude, cette thèse présente des preuves démontrant la synthèse d'une couche de Ge avec une phase hexagonale partielle
Silicon and Germanium crystallizing in the cubic diamond (denoted 3C) structure, have been the cornerstone of the electronic industry due to their inherent properties. However, metastable crystal phase engineering has emerged as a powerful method for tuning electronic band structures and conduction properties, enabling new functionalities while maintaining chemical compatibility. Notably, Germanium within the hexagonal 2H phase exhibits a direct bandgap of 0.38 eV. The alloy SixGe(1-x)-2H demonstrates strong light emission with a tunable wavelength ranging from 1.8 µm to 3.5 µm, depending on silicon concentration (40% to 0%). These properties position SixGe(1-x)-2H as a "holy grail material" among group IV semiconductors, with promising applications in mid-infrared light emission (e.g., LEDs and lasers) and detection on silicon platform.Despite recent progress, synthesizing large volumes of high-quality Ge-2H remains a challenge. Until now, Ge-2H has been limited to nanostructures, including nanodomains formed by shear-induced phase transformation, core/shell nanowires, and nanobranches. These approaches restrict active volumes, hindering basic property investigation and scalable device manufacturing. Achieving high-quality planar crystals with controlled doping is essential for advancing SixGe(1-x)-2H integration.This thesis aims to pioneer the synthesis of planar layers of hexagonal Ge using Ultra High Vacuum - Vapor Phase Epitaxy (UHV-VPE) on hexagonal m-plane II-VI substrates such as CdS-2H and ZnS-4H. The work includes developing surface preparation techniques for II-VI compounds and conducting detailed studies on hexagonal structure formation in materials such as GaAs-4H, ZnS-2H (grown via Metal-Organic Chemical Vapor Deposition, MOCVD), and Ge in both 2H and 4H hexagonal phases.A crucial preliminary step involved preparing substrate surfaces, as their quality directly impacts the crystalline quality of the epitaxial layers. Surface preparation included chemical-mechanical polishing with a Br2-MeOH solution to remove surface contaminants, confirmed through XPS analysis. Challenges related to the thermal properties of CdS-2H and ZnS-4H substrates were addressed, including desorption of II-VI compounds and the formation of negative whiskers above 500°C.Epitaxial growth by UHV-VPE posed selectivity constraints on II-VI substrates, prompting the exploration of alternative growth configurations, such as using buffer template layers. This thesis presents the first synthesis of a GaAs layer in the 4H hexagonal structure grown by epitaxy on ZnS-4H m-plane substrate, along with a first characterization of basal stacking faults (BSFs) in this layer. The feasibility of synthesizing Ge on GaAs-4H was also investigated. A significant part of the work was dedicated to growth on the CdS-2H substrates, demonstrating the first Ge layer with nanoscale regions of Ge-2H epitaxy, providing proof of concept for structure replication of Ge-2H on II-VI m-plane surfaces. However, amorphous and highly defective regions were also observed. Process optimization led to the development of ZnS-2H template layers on CdS-2H using MOCVD, circumventing constraints of direct growth on CdS. A thorough investigation of growth regimes revealed a strong impact of growth temperature on the CdS substrate surface, significantly influencing crystalline quality. m-plane ZnS layers grown at 360°C exhibited a pure hexagonal structure with excellent epitaxial orientation relative to CdS-WZ substrates. Strain relaxation occurred through misfit dislocations at the interface due to lattice mismatches of 7.63% and 6.83% along the a- and c-axes, forming basal and prismatic stacking faults on {11-20} planes. Finally, as further proof of concept, the thesis presents evidence supporting the synthesis of a Ge layer with a partial hexagonal phase

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Shkurmanov, Alexander, Chris Sturm, Jörg Lenzner, Guy Feuillet, Florian Tendille, Mierry Philippe De, and Marius Grundmann. "Selective growth of tilted ZnO nanoneedles and nanowires by PLD of patterned sapphire substrates." Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-210898.

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We report the possibility to control the tilting of nanoneedles and nanowires by using structured sapphire substrates. The advantage of the reported strategy is to obtain well oriented growth along a single direction tilted with respect to the surface normal, whereas the growth in other directions is suppressed. In our particular case, the nanostructures are tilted with respect to the surface normal by an angle of 58°. Moreover, we demonstrate that variation of the nanostructures shape from nanoneedles to cylindrical nanowires by using SiO2 layer is observed.

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Chen, Jie. "Spectroscopic Ellipsometry Studies of II-VI Semiconductor Materials and Solar Cells." University of Toledo / OhioLINK, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1286813480.

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O'Donnell, Cormac Brendan. "MBE growth and characterisation of ZnSe-based II-VI semiconductors." Thesis, Heriot-Watt University, 2000. http://hdl.handle.net/10399/524.

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Gros, Patricia. "Epitaxie métal sur semi-conducteur II-VI : cas des terres rares sur CdTe." Grenoble 1, 1993. http://www.theses.fr/1993GRE10079.

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Cette etude concerne l'epitaxie par jets moleculaires de couches metalliques sur du cdte (001). Nous avons montre que l'europium peut s'epitaxier sur du cdte, moyennant une rotation de 45 de ses axes 100 et 010 autour de l'axe de croissance 001. Nous avons mis en evidence que l'interface eu/cdte n'est pas abrupte: nous observons la formation d'une couche interfaciale (ci(eu)) entre la terre rare et le cdte. Nous avons egalement etudie les couches interfaciales formees par depot de samarium ou de neodyme. L'epaisseur de ces couches interfaciales depend de la temperature du substrat. La croissance de l'europium est bidimensionnelle sur une couche interfaciale a base de neodyme ou de samarium tandis qu'elle est tridimensionnelle sur une couche interfaciale a base d'europium. Nous avons pu realiser d'autre part des multicouches du type cdte/ci/cdte. . . Et des couches metalliques enterrees cdte/eu/ci/cdte. Les differentes heterostructures ont ete caracterisees structuralement par rbs et canalisation, et dans une moindre mesure par microscopie electronique en transmission et diffraction x. Nous avons aussi caracterise electriquement l'heterojonction eu/ci(nd)/cdte (dope indium), mis en evidence le caractere ohmique de la jonction et mesure une resistance specifique de contact de 5. 10##3. Cm#2

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Kumar, Vishwanath. "Characterization Of Large Area Cadmium Telluride Films And Solar Cells Deposited On Moving Substrates By Close Spaced Sublimation." [Tampa, Fla.] : University of South Florida, 2003. http://purl.fcla.edu/fcla/etd/SFE0000218.

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Ya-wen, Tzeng, and 曾雅文. "Interface study of II-VI compound semiconductor thin film grown on GaAs substrate." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/25036883588018655769.

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碩士
中原大學
物理學系
88
ZnSe buffer layers were grown at low temperature (100 to 250 oC) on the GaAs substrates by molecular beam epitaxy. Resistivity was found to decrease with the growth temperature. While, etch pit density (EPD) of ZnSe epilayer grown at 300 oC on the low temperature ZnSe buffer layers was found independent on the growth temperature of the buffer layer. EPD of the ZnMgSe epilayers, which were grown on the tilted GaAs substrates, was found to decrease with the substrate tilted angle. The result is corroborated with the photoluminescence (PL) measurement, which shows an increasing PL intensity with the tilted substrate angle.

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"Monocrystalline ZnTe/CdTe/MgCdTe Double Heterostructure Solar Cells Grown on InSb Substrates by Molecular Beam Epitaxy." Doctoral diss., 2014. http://hdl.handle.net/2286/R.I.26867.

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abstract: There has been recent interest in demonstrating solar cells which approach the detailed-balance or thermodynamic efficiency limit in order to establish a model system for which mass-produced solar cells can be designed. Polycrystalline CdS/CdTe heterostructures are currently one of many competing solar cell material systems. Despite being polycrystalline, efficiencies up to 21 % have been demonstrated by the company First Solar. However, this efficiency is still far from the detailed-balance limit of 32.1 % for CdTe. This work explores the use of monocrystalline CdTe/MgCdTe and ZnTe/CdTe/MgCdTe double heterostructures (DHs) grown on (001) InSb substrates by molecular beam epitaxy (MBE) for photovoltaic applications. Undoped CdTe/MgCdTe DHs are first grown in order to determine the material quality of the CdTe epilayer and to optimize the growth conditions. DH samples show strong photoluminescence with over double the intensity as that of a GaAs/AlGaAs DH with an identical layer structure. Time-resolved photoluminescence of the CdTe/MgCdTe DH gives a carrier lifetime of up to 179 ns for a 2 µm thick CdTe layer, which is more than one order of magnitude longer than that of polycrystalline CdTe films. MgCdTe barrier layers are found to be effective at confining photogenerated carriers and have a relatively low interface recombination velocity of 461 cm/s. The optimal growth temperature and Cd/Te flux ratio is determined to be 265 °C and 1.5, respectively. Monocrystalline ZnTe/CdTe/MgCdTe P-n-N DH solar cells are designed, grown, processed into solar cell devices, and characterized. A maximum efficiency of 6.11 % is demonstrated for samples without an anti-reflection coating. The low efficiency is mainly due to the low open-circuit voltage (V_oc), which is attributed to high dark current caused by interface recombination at the ZnTe/CdTe interface. Low-temperature measurements show a linear increase in V_oc with decreasing temperature down to 77 K, which suggests that the room-temperature operation is limited by non-radiative recombination. An open-circuit voltage of 1.22 V and an efficiency of 8.46 % is demonstrated at 77 K. It is expected that a coherently strained MgCdTe/CdTe/MgCdTe DH solar cell design will produce higher efficiency and V_oc compared to the ZnTe/CdTe/MgCdTe design with relaxed ZnTe layer.
Dissertation/Thesis
Doctoral Dissertation Electrical Engineering 2014

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Yuvaraj, D. "Studies On The Growth And Characterization Of II-VI Semiconductor Nanostructures By Evaporation Methods." Thesis, 2009. https://etd.iisc.ac.in/handle/2005/1037.

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In recent years, there has been growing interests on II-VI semiconductor nanostructures, which are suitable for applications in electronics and optoelectronic devices such as solar cells, UV lasers, sensors, light emitting diodes and field emission displays. II-VI semiconductor nanostructures with different morphologies such as wires, belts, rods, tubes, needles, springs, tetrapods, plates, hierarchical structures and so on, have been widely grown by vapor transport methods. However the process conditions used for the growth of nanostructures still remains incompatible for device fabrication. The realization of practical nanoscale devices using nanostructured film depends mainly on the availability of low cost and lower processing temperatures to manufacture high purity nanostructures on a variety of substrates including glass and polymer. In this thesis work, studies have been made on the growth and characterization of II-VI semiconductor nanostructures prepared at room temperature, under high vacuum, without employing catalysts or templates. (i) ZnO nanostructured films with different morphology such as flowers, needles and shrubs were deposited at room temperature on glass and polymer substrates by plasma assisted reactive process. (ii) Zn/ZnO core/shell nanowires were grown on Si substrates under optimized oxygen partial pressure. Annealing of this core shell nanowire in high vacuum resulted in the formation of ZnO nanocanals. (iii) ZnS and ZnSe nano and microstructures were grown on Si substrates under high vacuum by thermal evaporation. The morphology, structural, optical properties and composition of these nano and microstructures were investigated by XRD, SEM, TEM, Raman, PL and XPS. The growth mechanism behind the formation of the different nanostructures has been explained on the basis of vapour-solid (VS) mechanism.

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Yuvaraj, D. "Studies On The Growth And Characterization Of II-VI Semiconductor Nanostructures By Evaporation Methods." Thesis, 2009. http://hdl.handle.net/2005/1037.

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Частини книг з теми "Substrats II-VI"

Colibaba, G. V., E. V. Monaico, E. P. Goncearenco, I. Inculet, and I. M. Tiginyanu. "Features of Nanotemplates Manufacturing on the II-VI Compound Substrates." In 3rd International Conference on Nanotechnologies and Biomedical Engineering, 188–91. Singapore: Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-287-736-9_47.

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Park, Robert M. "ZnSe Growth on Non-Polar Substrates by Molecular Beam Epitaxy." In Growth and Optical Properties of Wide-Gap II–VI Low-Dimensional Semiconductors, 245–56. Boston, MA: Springer US, 1989. http://dx.doi.org/10.1007/978-1-4684-5661-5_24.

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Hobart, Karl D., Fritz J. Kub, Henry F. Gray, Mark E. Twigg, Dowwon Park, and Phillip E. Thompson. "Growth of low-dimensional structures on nonplanar patterned substrates." In Selected Topics in Group IV and II–VI Semiconductors, 338–43. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82411-0.50072-3.

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Bremond, G., A. Souifi, O. De Barros, A. Benmansour, P. Warren, and D. Dutartre. "Photoluminescence characterization of Si1−xGex relaxed “pseudo-substrates” grown on Si." In Selected Topics in Group IV and II–VI Semiconductors, 116–20. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82411-0.50032-2.

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Kayambaki, M., R. Callec, G. Constantinidis, Ch Papavassiliou, E. Löchtermann, H. Krasny, N. Papadakis, P. Panayotatos, and A. Georgakilas. "Investigation of Si-substrate preparation for GaAs-on-Si MBE growth." In Selected Topics in Group IV and II–VI Semiconductors, 300–303. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82411-0.50064-4.

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Kolodzey, J., P. R. Berger, B. A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, et al. "Optical and electronic properties of SiGeC alloys grown on Si substrates." In Selected Topics in Group IV and II–VI Semiconductors, 386–91. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82411-0.50081-4.

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Li, Shaozhong, Qi Xiang, Dawen Wang, and Kang L. Wang. "Modeling of facet growth on patterned Si substrate in gas source MBE." In Selected Topics in Group IV and II–VI Semiconductors, 185–89. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82411-0.50044-9.

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Sochinskii, N. V., J. C. Soares, E. Alves, M. F. da Silva, P. Franzosi, S. Bernardi, and E. Diéguez. "Structural properties of CdTe and Hg1−xCdxTe epitaxial layers grown on sapphire substrates." In Selected Topics in Group IV and II–VI Semiconductors, 195–200. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82411-0.50123-6.

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Benisty, Henri, Jean-Jacques Greffet, and Philippe Lalanne. "More confined electrons: Quantum dots and quantum wires." In Introduction to Nanophotonics, 246–72. Oxford University Press, 2022. http://dx.doi.org/10.1093/oso/9780198786139.003.0009.

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This chapter aims at introducing structures where the electron is confined in two or three dimensions, the so-called quantum wires and quantum dots. The basics of the density-of-states are explained, as its strong structure distinguishes these systems from higher-dimensional ones, in addition of the large interface/volume ratio. Fabrication routes of different nature are presented, either self-organised or epitaxial, and the tunability of photonic properties that result from variable size and shape is underlined. The semiconductor families and the applications of each route are presented. The emblematic case of InAs growth on III-V substrates provides the key phenomena of interest. The II-VI colloidal quantum dots are the other emblematic case, leading to the evolving uses of quantum dots, e.g. in displays or as nanoprobes. The description of porous silicon as a lower-dimensional version of silicon is used to introduce the reader to more subtle interplays of electronic and photonic properties.

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Gutheit, T., M. Heinau, H. J. Füsser, C. Wild, P. Koidl, and G. Abstreiter. "Molecular beam epitaxial grown Si1−xCx layers on Si(001) as a substrate for MWCVD of diamond." In Selected Topics in Group IV and II–VI Semiconductors, 426–30. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82411-0.50088-7.

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Тези доповідей конференцій з теми "Substrats II-VI"

Uusimma, P., M. Pessa, P. Blood, I. Auffret, and C. Cooper. "Blue-green II-VI quantum well lasers." In The European Conference on Lasers and Electro-Optics. Washington, D.C.: Optica Publishing Group, 1998. http://dx.doi.org/10.1364/cleo_europe.1998.ctug4.

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Blue-green laser diodes have been fabricated in the ZnSSe/CdZnSe quantum well system using structures grown on GaAs substrates in a dual-chamber MBE system. Short-lived room temperature CW operation has been achieved at a wavelength of 515nm with a threshold current density of 580Acm−2 and threshold voltage of 7V for a stripe-contact device 12μm × 1000μm with coated facets (90%/60%). The device had 1μm thick MgZnSSe optical confinement layers doped n = 8×1017cm−3 and 8×1016cm−3 respectively, ZnSSe waveguide core of total width 0.2 μm, with a centrally located 7nm wide CdZnSe quantum well. The structure was grown on an n-type substrate and was mounted p-side up. To reduce the operating voltage the devices used a new Te/Pd/Pt/Au contact technology and a ZnSe top contact layer grown by migration enhanced epitaxy. Studies of inverted (n on p) structures with GalnP and AlGaAs buffer layers, intended to reduce the internal barrier height at the Zn/Se heterojunction, showed these structures to have high forward voltages. Consequently only pulsed operation of these inverted lasers up to 250K was possible, with a threshold current of 600Acm−2.

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Zogg, Hans, A. N. Tiwari, Stefan Blunier, Clau Maissen, and Jiri Masek. "Heteroepitaxy of II-VI and IV-VI semiconductors on Si substrates." In Physical Concepts of Materials for Novel Optoelectronic Device Applications, edited by Manijeh Razeghi. SPIE, 1991. http://dx.doi.org/10.1117/12.24409.

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Haase, M. A., J. Qiu, J. M. DePuydt, and H. Cheng. "Blue-green II–VI laser diodes." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1991. http://dx.doi.org/10.1364/oam.1991.tuss1.

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Modern epitaxial growth techniques, such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), now allow device quality undoped and n-type ZnSe layers to be grown routinely, typically on GaAs substrates. In addition, low resistivity p-type ZnSe has been demonstrated using Li and N (NH3) dopants, (for example, Refs. 1–5). For a time, there seemed to be an upper limit on the attainable net acceptor concentration (NA-ND) of about 1017 cm-3. Recently, however, significantly higher NA-ND has been achieved in ZnSe:N grown by MBE using nitrogen free radicals produced by an rf plasma source. Thus far, the largest net acceptor concentration in ZnSe layers using this doping technique is 1.0 × 1018 cm-3, which is an order of magnitude greater than that ever obtained in Li-doped samples. Using these technologies, rudimentary blue light emitting diodes (LEDs) have been reported by several laboratories. Here we present what we believe is the first demonstration of diode lasers fabricated from wide band gap II–VI materials. These devices emit coherent light at 490 run (blue-green) from a ZnSe-based single quantum well structure under pulsed current injection at 77 K. Details of structure, output, and typical optical spectra are presented.

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Ueta, A., A. Avramescu, K. Uesugi, T. Numai, I. Suemune, H. Machida, and H. Shimoyama. "Selective Area Growth of Widegap II-VI Semiconductors on Patterned Substrates." In 1997 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1997. http://dx.doi.org/10.7567/ssdm.1997.c-5-2.

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Haase, Michael A. "Blue-green II-VI Laser Diodes: Progress in Reliability." In Symposium on Optical Memory. Washington, D.C.: Optica Publishing Group, 1996. http://dx.doi.org/10.1364/isom.1996.ofb.1.

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Blue-green laser diodes based on MgZnSSe-ZnSSe-CdZnSe separate confinement heterostructures grown lattice-matched to GaAs substrates have demonstrated performance suitable for optical data storage applications. The 3M-Philips collaboration has demonstrated index-guided devices featuring single transverse mode operation with room-temperature cw output power in excess of 40 mW per facet at wavelengths of 510-520 nm with less than 10 μm of astigmatism. Buried-ridge devices have been demonstrated with threshold currents as low as 2.5 mA. Improvements in p-type ohmic contacts have enabled threshold voltages of 3.7 V.

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Ozawa, Masafumi, and Akira Ishibashi. "Room Temperature CW Emission of II-VI Diode lasers." In Optical Data Storage. Washington, D.C.: Optica Publishing Group, 1994. http://dx.doi.org/10.1364/ods.1994.md4.

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ZnMgSSe-based II-VI semiconductors are promising materials for making blue and green laser diodes (LD). Haase et al. reported the first demonstration of ZnCdSe quantum well lasers[1]. Room temperature (RT) continuous-wave (CW) operation was the next milestone for practical usage of blue and green LDs. Recently we have achieved RT CW operation of ZnCdSe/ZnMgSSe lasers. To realize RT operation, lattice-matched heterostructures with sufficiently large electrical and optical confinement are essential. These conditions can be satisfied with employing a novel ZnMgSSe alloy, which was originally developed by Okuyama et al.[2], for cladding layers. This alloy offers a wide range of bandgap energy from 2.7 to ~4 eV, while maintaining lattice matching to a GaAs substrate, which gives us the flexibility in designing the LDs. We fabricated a separate confinement heterostructure (SCH), having ZnMgSSe cladding layers, ZnSe waveguiding layers, and a ZnCdSe multiple-quantum-well(MQW) active layer. The structure shown in fig.1 was grown on a (001) n-GaAs substrate by molecular beam epitaxy(MBE). Figure 2 shows the light output against current characteristics at RT measured under continuous and pulsed-current conditions. The CW threshold current (Ith) is 45 mA corresponding to a threshold current density of 1.5 kA/cm2. The typical laser threshold voltage is 17 V. The lasing wavelength is 523.5 nm under continuous operation as shown in figure 3. We have also observed blue stimulated emission at 489.9 nm (figure 4). This blue laser has the same structure as the blue-green laser except for employing a less Cd containing active layer and a p-ZnTe/p-ZnSe MQW layer as a p-contact layer in order to reduce the operating voltage. This MQW layer leads to the operating voltage of 6.3 V.

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Di Marzio, Don, David J. Larson, Jr., Louis G. Casagrande, Jun Wu, Michael Dudley, Stephen P. Tobin, and Peter W. Norton. "Large-area x-ray topographic screening of II-VI substrates and epilayers." In SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, edited by Herbert K. Pollehn and Raymond S. Balcerak. SPIE, 1994. http://dx.doi.org/10.1117/12.179671.

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BONEY, C., D. B. EASON, Z. YU, W. C. HUGHES, J. W. COOK, J. F. SCHETZINA, G. CANTWELL, and W. C. HARSCH. "Blue/Green Light Emitters Based on II-VI Heterostructures on ZnSe Substrates." In 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.s-v-1.

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Irvine, S. J. C., H. Hill, G. T. Brown, J. E. Hails, and J. B. Mullin. "Selective Area Epitaxy of II-VI Compounds by Laser-induced Photo-MOVPE." In Microphysics of Surfaces, Beams, and Adsorbates. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/msba.1989.tua2.

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A 257nm frequency doubled argon ion laser has been used to photo-dissociate Me2Cd (dimethylcadmium) together with tellurium precursors for low temperature epitaxial growth of CdTe(1). By projecting the laser onto the substrate surface, through a suitable mask, epitaxial growth can be achieved selectively within the illuminated regions following dissociation of the precursors by the UV radiation. However, a number of conditions must be satisfied in order to bring about selective area epitaxy and the following factors will be considered in this paper.

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Tamargo, Maria C., Ning Dai, Abdullah Cavus, Rhonda Dzakpasu, Wojciech Krystek, Fred H. Pollak, Alph F. Semendy, et al. "Growth of wide bandgap II-VI alloys on InP substrates by molecular beam epitaxy." In Photonics for Industrial Applications, edited by Robert L. Gunshor and Arto V. Nurmikko. SPIE, 1994. http://dx.doi.org/10.1117/12.197267.

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Звіти організацій з теми "Substrats II-VI"

Wilson, Thomas E., Avraham A. Levy, and Tzvi Tzfira. Controlling Early Stages of DNA Repair for Gene-targeting Enhancement in Plants. United States Department of Agriculture, March 2012. http://dx.doi.org/10.32747/2012.7697124.bard.

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Gene targeting (GT) is a much needed technology as a tool for plant research and for the precise engineering of crop species. Recent advances in this field have shown that the presence of a DNA double-strand break (DSB) in a genomic locus is critical for the integration of an exogenous DNA molecule introduced into this locus. This integration can occur via either non-homologous end joining (NHEJ) into the break or homologous recombination (HR) between the broken genomic DNA and the introduced vector. A bottleneck for DNA integration via HR is the machinery responsible for homology search and strand invasion. Important proteins in this pathway are Rad51, Rad52 and Rad54. We proposed to combine our respective expertise: on the US side, in the design of zincfinger nucleases (ZFNs) for the induction of DNA DSBs at any desired genomic locus and in the integration of DNA molecules via NHEJ; and on the Israeli side in the HR events, downstream of the DSB, that lead to homology search and strand invasion. We sought to test three major pathways of targeted DNA integration: (i) integration by NHEJ into DSBs induced at desired sites by specially designed ZFNs; (ii) integration into DSBs induced at desired sites combined with the use of Rad51, Rad52 and Rad54 proteins to maximize the chances for efficient and precise HR-mediated vector insertion; (iii) stimulation of HR by Rad51, Rad52 and Rad54 in the absence of DSB induction. We also proposed to study the formation of dsT-DNA molecules during the transformation of plant cells. dsT-DNA molecules are an important substrate for HR and NHEJ-mediatedGT, yet the mode of their formation from single stranded T-DNA molecules is still obscure. In addition we sought to develop a system for assembly of multi-transgene binary vectors by using ZFNs. The latter may facilitate the production of binary vectors that may be ready for genome editing in transgenic plants. ZFNs were proposed for the induction of DSBs in genomic targets, namely, the FtsH2 gene whose loss of function can easily be identified in somatic tissues as white sectors, and the Cruciferin locus whose targeting by a GFP or RFP reporter vectors can give rise to fluorescent seeds. ZFNs were also proposed for the induction of DSBs in artificial targets and for assembly of multi-gene vectors. We finally sought to address two important cell types in terms of relevance to plant transformation, namely GT of germinal (egg) cells by floral dipping, and GT in somatic cells by root and leave transformation. To be successful, we made use of novel optimized expression cassettes that enable coexpression of all of the genes of interest (ZFNs and Rad genes) in the right tissues (egg or root cells) at the right time, namely when the GT vector is delivered into the cells. Methods were proposed for investigating the complementation of T-strands to dsDNA molecules in living plant cells. During the course of this research, we (i) designed, assembled and tested, in vitro, a pair of new ZFNs capable of targeting the Cruciferin gene, (ii) produced transgenic plants which expresses for ZFN monomers for targeting of the FtsH2 gene. Expression of these enzymes is controlled by constitutive or heat shock induced promoters, (iii) produced a large population of transgenic Arabidopsis lines in which mutated mGUS gene was incorporated into different genomic locations, (iv) designed a system for egg-cell-specific expression of ZFNs and RAD genes and initiate GT experiments, (v) demonstrated that we can achieve NHEJ-mediated gene replacement in plant cells (vi) developed a system for ZFN and homing endonuclease-mediated assembly of multigene plant transformation vectors and (vii) explored the mechanism of dsTDNA formation in plant cells. This work has substantially advanced our understanding of the mechanisms of DNA integration into plants and furthered the development of important new tools for GT in plants.

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