Дисертації з теми "Stochastic Magnetic Tunnel Junctions"
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Wong, Pak Kin. "Magnetic tunnel junctions." Thesis, University of Cambridge, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.624388.
Повний текст джерелаAlmasi, Hamid, and Hamid Almasi. "Perpendicular Magnetic Tunnel Junctions with MgO Tunnel Barrier." Diss., The University of Arizona, 2017. http://hdl.handle.net/10150/626332.
Повний текст джерелаKaiser, Christian. "Novel materials for magnetic tunnel junctions." kostenfrei, 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=97561388X.
Повний текст джерелаEames, Matthew E. "The theory of magnetic tunnel junctions." Thesis, University of Exeter, 2007. http://hdl.handle.net/10036/38673.
Повний текст джерелаYu, Chak Chung Andrew. "Electron microscopy studies of magnetic tunnel junctions." Thesis, University of Oxford, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.302402.
Повний текст джерелаSuszka, Anna Kinga. "Resonant spin transfer in magnetic tunnel junctions." Thesis, University of Leeds, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.493600.
Повний текст джерелаKirk, Daniel James. "A TEM Study of Magnetic Tunnel Junctions and Magnetic Materials." Thesis, University of Oxford, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.491270.
Повний текст джерелаKugler, Zoe [Verfasser]. "Perpendicular anisotropy in magnetic tunnel junctions / Zoe Kugler." Bielefeld : Universitätsbibliothek Bielefeld, Hochschulschriften, 2012. http://d-nb.info/1023862891/34.
Повний текст джерелаAnderson, Graham Ian Robert. "The effects of annealling on magnetic tunnel junctions." Thesis, University of Leeds, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.485761.
Повний текст джерелаRomero, Dominguez Saul. "Noise and electrical characterization in magnetic tunnel junctions." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611223.
Повний текст джерелаBonholzer, Michael. "Magnetic Tunnel Junctions based on spinel ZnxFe3-xO4." Doctoral thesis, Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-212756.
Повний текст джерелаPrice, Edward P. "Characterization of transport processes in magnetic tunnel junctions /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC IP addresses, 2001. http://wwwlib.umi.com/cr/ucsd/fullcit?p3022231.
Повний текст джерелаWang, Weigang. "Spin-dependent transport in magnetic tunnel junctions and diluted magnetic semiconductors." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 184 p, 2009. http://proquest.umi.com/pqdweb?did=1654494821&sid=3&Fmt=2&clientId=8331&RQT=309&VName=PQD.
Повний текст джерелаBernert, Kerstin. "Spin-transfer torques in MgO-based magnetic tunnel junctions." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-135339.
Повний текст джерелаDiese Arbeit befasst sich mit Spin-Transfer-Torque-Effekten in MgO-basierten magnetischen Tunnelstrukturen. Die Phasendiagramme als Funktion von Spannung und Magnetfeld von CoFeB/MgO/CoFeB-Tunnelstrukturen mit Magnetisierung in der Ebene wurden experimentell bestimmt. Um thermische Anregungseffekte zu limitieren, wurden die Experimente einerseits mit nanosekundenlangen Spannungspulsen und andererseits bei niedrigen Temperaturen (4.2 K) durchgeführt. Die Spannungsabhängigkeit der beiden Spin-Torque-Parameter (in-plane und senkrechter Spin-Transfer-Torque) wurde aus Messungen der thermisch angeregten ferromagnetischen Resonanz bestimmt, wobei sich Werte ergaben, die gut mit vorangegangenen Untersuchungen übereinstimmen. Zusätzlich wurden Werte für Materialparameter wie die effektive Magnetisierung und den Dämpfungsparameter gewonnen. Unter Verwendung der erhaltenen Werte wurden die Schaltspannungen als Funktion des angelegten Magnetfeldes analytisch und numerisch berechnet, indem die erweiterte Landau-Lifshitz-Gilbert-Gleichung gelöst wurde. Im Gegensatz zu vorangegangenen Untersuchungen wurde der senkrechte Spin-Transfer-Torque dabei mit einbezogen. Darüber hinaus wurden verschiedene Konfigurationen für die Richtung der magnetischen Anisotropie der freien und fixierten Schicht berücksichtigt
Platt, Christopher L. "Magnetic and transport properties of spin-dependent tunnel junctions /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC IP addresses, 1999. http://wwwlib.umi.com/cr/ucsd/fullcit?p9952654.
Повний текст джерелаElwell, Clifford Alastair. "The development of magnetic tunnel junction fabrication techniques." Thesis, University of Cambridge, 2002. https://www.repository.cam.ac.uk/handle/1810/34611.
Повний текст джерелаTemple, Rowan Caradoc. "Spin accumulation and transport studied in double magnetic tunnel junctions." Thesis, University of Leeds, 2014. http://etheses.whiterose.ac.uk/8259/.
Повний текст джерелаYang, Hangfu [Verfasser]. "Thermal and magnetoelastic effects in magnetic tunnel junctions / Hangfu Yang." Hannover : Gottfried Wilhelm Leibniz Universität Hannover, 2018. http://d-nb.info/1172414521/34.
Повний текст джерелаZhang, Zhaohui. "Spin-dependent electrical and thermal transport in magnetic tunnel junctions." APS, 2012. http://hdl.handle.net/1993/31947.
Повний текст джерелаFebruary 2017
Lytvynenko, Ia M. "Magnetic tunnel junctions as a storage element for memory device." Thesis, Сумський державний університет, 2014. http://essuir.sumdu.edu.ua/handle/123456789/35037.
Повний текст джерелаNewhouse-Illige, T., Yaohua Liu, M. Xu, Hickey D. Reifsnyder, A. Kundu, H. Almasi, Chong Bi, et al. "Voltage-controlled interlayer coupling in perpendicularly magnetized magnetic tunnel junctions." NATURE PUBLISHING GROUP, 2017. http://hdl.handle.net/10150/624333.
Повний текст джерелаGokce, Aisha. "Low frequency current and resistance fluctuations in magnetic tunnel junctions." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 203 p, 2009. http://proquest.umi.com/pqdweb?did=1896928791&sid=9&Fmt=2&clientId=8331&RQT=309&VName=PQD.
Повний текст джерелаKurij, Georg. "Magnetic tunnel junctions for ultrasensitive all-oxide hybrid sensors for medical applications." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS051/document.
Повний текст джерелаSensing of extremely weak magnetic signals, such as produced by electrical activity of the human heart and brain, still remains a challenge. A very promising alternative to established field-sensing techniques is a novel, spin electronic based, ultrasensitive device called an all-oxide mixed sensor. It is formed by a superconducting loop, acting as a flux-to-field transformer and field amplifier, combined with a magnetic tunnel junction sensing the field.Our research activities have the goal to improve the performance of the mixed sensor, focusing on its core component – the magnetic tunnel junction (MTJ). The capability of an MTJ is predominantly determined by the quality of the tunnel barrier and by the stability of magnetization states. In this context, oxide materials, known for their remarkable physical properties, have already shown their advantages. Thus, studies on La0.7Sr0.3MnO3/SrTi0.8Nb0.2O3 functional oxide interfaces, exploration of SrRuO3/ La0.7Sr0.3MnO3 exchange bias system, and the final integration of these two components into a magnetic tunnel junction form the main part of our work.In the presented thesis, oxide thin films and heterostructures used for studies were grown by pulsed laser deposition (PLD). We fabricated electronic devices for investigations using clean room microfabrication techniques , e.g. optical lithography, chemically assisted ion beam etching (CAIBE) and sputtering. Temperature dependent magnetic and (magneto-) transport measurements were performed.Metal-semiconductor interfaces formed by the half-metallic ferromagnet La0.7Sr0.3MnO3 (LSMO) and heavily doped semiconductor SrTi0.8Nb0.2O3 (Nb:STO) were studied. Antiferromagnetic coupling at the interface of the LaSrMnO3 and itinerant ferromagnet SrRuO3 was explored. Magnetic tunnel junctions with Schottky barrier were investigated (MTJs with Nb:STO and LSMRO)
Bonholzer, Michael [Verfasser], Marius [Akademischer Betreuer] Grundmann, Marius [Gutachter] Grundmann, and Georg [Gutachter] Schmidt. "Magnetic Tunnel Junctions based on spinel ZnxFe3-xO4 : Magnetic Tunnel Junctions based onspinel ZnxFe3-xO4 / Michael Bonholzer ; Gutachter: Marius Grundmann, Georg Schmidt ; Betreuer: Marius Grundmann." Leipzig : Universitätsbibliothek Leipzig, 2016. http://d-nb.info/1240629737/34.
Повний текст джерелаJo, Moon-Ho. "Spin polarised tunnel junctions based on half-metallic manganites." Thesis, University of Cambridge, 2001. https://www.repository.cam.ac.uk/handle/1810/183622.
Повний текст джерелаGuo, Wei. "Compact modeling of magnetic tunnel junctions and design of hybrid CMOS-magnetic integrated circuits." Grenoble INPG, 2010. http://www.theses.fr/2010INPG0126.
Повний текст джерелаWang, You. "Analyse de fiabilité de circuits logiques et de mémoire basés sur dispositif spintronique." Thesis, Paris, ENST, 2017. http://www.theses.fr/2017ENST0005/document.
Повний текст джерелаSpin transfer torque magnetic tunnel junction (STT-MTJ) has been considered as a promising candidate for next generation of non-volatile memories and logic circuits, because it provides a perfect solution to overcome the bottleneck of increasing static power caused by CMOS technology scaling. However, its commercialization is limited by the poor reliability, which deteriorates severely with device scaling down. This thesis focuses on the reliability investigation of MTJ based non-volatile circuits. Firstly, a compact model of MTJ including main reliability issues is proposed and validated by the comparison with experimental data. Based on this accurate model, the reliability of typical circuits is analyzed and reliability optimization methodology is proposed. Finally, the stochastic switching behavior is utilized in some new designs of conventional applications
Ladak, Sam. "Hot electron transport and barrier oxidation effects in magnetic tunnel junctions." Thesis, University of Exeter, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.425319.
Повний текст джерелаPatibandla, Sridhar. "Spin transport studies in nanoscale spin valves and magnetic tunnel junctions." VCU Scholars Compass, 2008. http://scholarscompass.vcu.edu/etd/1611.
Повний текст джерелаAlmasi, H., C. L. Sun, X. Li, T. Newhouse-Illige, C. Bi, K. C. Price, S. Nahar, et al. "Perpendicular magnetic tunnel junction with W seed and capping layers." AMER INST PHYSICS, 2017. http://hdl.handle.net/10150/624048.
Повний текст джерелаUrech, Mattias. "Spin-dependant transport in lateral nano-devices based on magnetic tunnel junctions." Doctoral thesis, Stockholm, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3866.
Повний текст джерелаLiu, Huanlong. "Spin Transfer Driven Magnetization Dynamics in Spin Valves and Magnetic Tunnel Junctions." Thesis, New York University, 2013. http://pqdtopen.proquest.com/#viewpdf?dispub=3557012.
Повний текст джерелаThis thesis describes experimental studies of magnetization dynamics in both spin valves (SVs) and magnetic tunnel junctions (MTJs) subject to spin-polarized currents. A spin-polarized electrical current can transfer its angular momentum to a ferromagnet through a spin-transfer torque (STT), resulting in intriguing magnetization dynamics such as the reversal of the magnetization direction, precession and relaxation.
The ferromagnetic systems investigated were nanopillars, tens to hundreds of nanometers in cross section and a few nanometers in thickness, which were further integrated into SV or MTJ structures.
The magnetization switching and relaxation studies were performed on all-perpendicularly magnetized SVs. The switching probabilities were investigated for different pulse conditions at room temperature, where thermal fluctuations can play an important role. The pulse duration was varied over 10 orders of magnitude, from the fundamental timescales of magnetization precessional dynamics, 50 ps, to 1 s. Three switching regimes were found at different timescales. In the short-time regime, the switching probability was mainly determined by the angular momentum transfer between the current and the magnetization. In the long-time regime, the switching becomes thermal activation over an effective energy barrier modified by the STT. In the crossover regime, both spin-transfer and thermal effects are important.
The magnetization relaxation was studied by a two-pulse correlation method, where the relaxation time is measured by the interval between the two pulses. The thermal effects were shown to be important even at nanosecond time scales.
The switching and precession of magnetization were also studied in structures where a perpendicular spin polarizing layer is employed with an in-plane magnetized MTJ. When subject to pulses, the initial STT from the polarizer to the free layer is perpendicular to the free layer plane. For a large enough STT, this tilts the free layer magnetization out of the plane to create a large demagnetization field, typically at tens or hundreds of millitesla. This demagnetization field then becomes the dominant magnetic field acting on the free layer, leading to the precession of its magnetization. This magnetization precession was observed through real-time device resistance measurements, where precessions with hundreds of picoseconds are found from single current pulse stimuli.
Du, Yuqing. "Film deposition and microfabrication of magnetic tunnel junctions with an MgO barrier." Thesis, University of Plymouth, 2012. http://hdl.handle.net/10026.1/1174.
Повний текст джерелаMeo, Andrea. "Atomistic model of magnetisation dynamics and equilibrium properties of magnetic tunnel junctions." Thesis, University of York, 2018. http://etheses.whiterose.ac.uk/22730/.
Повний текст джерелаYang, Hongxin. "First-principles study of spintronic phenomena in magnetic tunnel junctions and graphene." Thesis, Grenoble, 2012. http://www.theses.fr/2012GRENY054/document.
Повний текст джерелаSpintronic phenomena in magnetic tunnel junctions and thin films are very promising from both fundamental and application points of view. They are based on exploring spin of electron in addition to its charge and include interlayer exchange coupling (IEC), perpendicular magnetic anisotropy (PMA), giant (GMR) and tunnel magnetoresistance (TMR), Spin Transfer Torque (STT), Spin Hall Effect (SHE) and even inducing magnetism in non d elements including graphene. This thesis will include first-principles studies of spintronic phenomena which have been of high interest recently. First part is devoted to interlayer exchange coupling across insulating materials including MgO, SrTiO3, GaAs and ZnSe. The second part will include ab initio studies of perpendicular magnetic anisotropy at Fe|MgO interfaces and MTJs including the mechanism and its correlation to the Bloch state symmetry based spin filtering. In third part investigations of magnetic anisotropy and work function in Co|graphene interfaces will be presented. Next, it will be shown possibility of inducing and optimizing intrinsic magnetism in graphene nanomeshes. Final part will be devoted to inducing spin polarization and tuning Dirac point and magnetic order in graphene by means of magnetic substrate proximity effects
Schleicher, Filip. "Impact of structural defects on spin-polarized transport across magnetic tunnel junctions." Thesis, Strasbourg, 2012. http://www.theses.fr/2012STRAE036/document.
Повний текст джерелаIn the manuscript it is presented how the spin-polarized transport across magnetic tunnel junctions (MTJ) is affected by presence of structural defects within the barrier and at its interfaces. Studies concern structures incorporating SrTiO3, TiO2 and MgO insulators. In case of the first two structures it is shown how interfacial oxidation results in the drastically reduced value of the tunnelmagnetoresistance (TMR). In case of the MgO barrier, extensive studies on defect sites within the crystalline network of the insulator are performed. It is shown that one may control density of certain types of oxygen vacancies by altering growth conditions of the MgO layer. Further electrical and optical studies give insight into energetical positioning of these defect sites. Extension of the Î magnetotransport analysis method from the ‘absolute’ to the ‘relative’ case reveals several regimes of transport across CoFeB/MgO/CoFeB junctions. The low-temperature ‘intrinsic’ regime is attributed exclusively to the band structure effects of the CoFeB electrodes, whereas the mid- to room-temperature ‘extrinsic’ regimes result from the gradual incidence of thermally activated defect sites on the spin-polarized transport, which is accompanied by an increased reduction of both the resistance and the TMR signal. Initial experiments show that optical excitation of the defect sites has a crucial impact on the magnetotransport
Harnchana, Viyada. "Transmission electron microscopy characterisation for development of CoFeB/MgO based magnetic tunnel junctions." Thesis, University of Leeds, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.535675.
Повний текст джерелаLe, Quang Tuan. "Magnetodynamics in Spin Valves and Magnetic Tunnel Junctions with Perpendicular and Tilted Anisotropies." Doctoral thesis, KTH, Materialfysik, MF, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-191176.
Повний текст джерелаEffekter av spinnvridmoment (STT) har fört spinntroniken allt närmare praktiska elektroniska tillämpningar, såsom MRAM och den spinntroniska mikrovågsoscillatorn (STO), och har blivit ett allt mer attraktivt forskningsområde inom spinndynamik. Användning av material med vinkelrät magnetisk anisotropi (PMA) i sådana tillämpningar erbjuder flera stora fördelar, såsom låg strömförbrukning och funktion vid låga fält i kombination med hög termisk stabilitet. Den utbyteskoppling (”exchange bias”) en PMA-tunnfilm utövar på ett intilliggande skikt med magnetisk anisotropi i planet (IMA) kan få IMA-magnetiseringsriktningen att vridas ut ur planet, vilket ger en materialstack med en effektivt sett lutande magnetisk anisotropi. Lutningsvinkeln kan manipuleras med både inre materialparametrar, såsom PMA och mättningsmagnetisering, och yttre parametrar, såsom skikttjocklekarna. STO:er kan tillverkas som flera olika typer - som en nanokontaktsöppning på en s.k. mesa av en deponerad pseudospinnventilstruktur (PSV) eller som en nanotråd etsad ur en magnetisk tunnlingsövergång (MTJ) –och bestå av mycket reproducerbar PMA eller av skikt med på förhand bestämt lutning av dess magnetiska anisotropi. MTJ-STO:er av CoFeB med helt vinkelrät anisotropi visar högfrekvent mikrovågsgenerering med extremt stort frekvensomfång hos strömstyrningen, detta vid låg biasering. Mätning och analys av spinnvridmoments-ferromagnetisk resonans (ST-FMR) avslöjade ett biasberoende hos spinnvridmomentskomponenter, vilket indikerar en stor potential för direkt gate-spänningsstyrda STO:er. I helt vinkelräta PSV-STO:er observerades magnetiska droppar under nanokontaktområdet vid låg drivström och lågt pålagt fält. Dessutom erhölls preliminära resultat av mikrovågssjälvsvängning och av s.k. ”droplet solitons” hos PSV-STO:er med lutande polarisator. Dessa är lovande och skulle vara värda att undersökas i ytterligare studier av STT-driven spinndynamik.
QC 20160829
Taudul, Beata. "Impact of symmetry of oxygen vacancies on electronic transport in MgO-based magnetic tunnel junctions." Thesis, Strasbourg, 2017. http://www.theses.fr/2017STRAE042/document.
Повний текст джерелаIn sprintronics, the study of multilayer heterostructures composed of a ferromagnetic electrodes and a thin insulating layer, i.e. magnetic tunnel junctions (MTJs), is of special importance. The canonical systems are MTJs made of Fe/MgO/Fe where hight tunneling mangetoresistance ratio (TMR) values were measured. The crucial factor defining the junction performance is the structural imperfection appearing in a real devices. In our work we focused in particular on oxygen vacancies in MgO. By means of density functional theory we studied ground state electronic properties of single and double oxygen vacancies, referred as F and M centers, respectively, in bulk MgO. We then switched to full junctions where we investigated the impact of vacancies on the ballistic transport. We demonstrated that M centers played a superior role and proved that coherent transport, preserving electrons spin and symmetry, is possible in presence of paired vacancies
Walter, Marvin [Verfasser], Markus [Akademischer Betreuer] Münzenberg, and Christian [Akademischer Betreuer] Jooß. "The tunnel magneto-Seebeck effect in magnetic tunnel junctions / Marvin Walter. Gutachter: Markus Münzenberg ; Christian Jooß. Betreuer: Markus Münzenberg." Göttingen : Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2014. http://d-nb.info/1046987240/34.
Повний текст джерелаNewhouse-Illige, T., Y. H. Xu, Y. H. Liu, S. Huang, H. Kato, C. Bi, M. Xu, B. J. LeRoy, and W. G. Wang. "Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdO X barriers." AMER INST PHYSICS, 2018. http://hdl.handle.net/10150/627087.
Повний текст джерелаLei, Zhiqiang, and 雷志强. "Low-frequency noise study of magnetic tunnel junctions and their applications on biomarker immunoassay." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2013. http://hdl.handle.net/10722/193413.
Повний текст джерелаpublished_or_final_version
Electrical and Electronic Engineering
Doctoral
Doctor of Philosophy
Atcheson, Gwénaël Yves Peter. "Integration of oxynitride barriers by reactive RF sputtering for use in magnetic tunnel junctions." Thesis, Queen's University Belfast, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.675949.
Повний текст джерелаJiang, Lai. "Magnetoresistance and electrical noise in silver chalcogenide silver telluride, zigzag-shaped AMR magnetic sensors, and magnetic tunnel junctions." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file 1.40 Mb., 150 p, 2006. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pqdiss&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft_dat=xri:pqdiss:3220789.
Повний текст джерелаWimmer, Michael. "Quantum transport in nanostructures : from computational concepts to spintronics in graphene and magnetic tunnel junctions /." Regensburg Univ.-Verl. Regensburg, 2009. http://d-nb.info/99940721X/34.
Повний текст джерелаFranz, Christian [Verfasser]. "An ab initio approach to spin transport in magnetic tunnel junctions with disorder / Christian Franz." Gießen : Universitätsbibliothek, 2016. http://d-nb.info/1088314694/34.
Повний текст джерелаHughes, Norman David. "The manufacture and testing of magnetic tunnel junctions and a study of their swithching characteristics." Thesis, Brunel University, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.251203.
Повний текст джерелаManos, Orestis [Verfasser]. "Perpendicular magnetic tunnel junctions based on CoFeB and MnIr/CoFe with exchange bias / Orestis Manos." Bielefeld : Universitätsbibliothek Bielefeld, 2019. http://d-nb.info/1196642885/34.
Повний текст джерелаWimmer, Michael. "Quantum transport in nanostructures from computational concepts to spintronics in graphene and magnetic tunnel junctions." Regensburg Univ.-Verl. Regensburg, 2008. http://d-nb.info/99420826X/04.
Повний текст джерелаRogge, Jan [Verfasser]. "Barium Oxide as novel barrier in Heusler based magnetic tunnel junctions / Jan Rogge. Fakultät für Physik." Bielefeld : Universitätsbibliothek Bielefeld, Hochschulschriften, 2012. http://d-nb.info/1029455562/34.
Повний текст джерела