Статті в журналах: "Spin Injector"

1

Chen, Zhigao, Baigeng Wang, D. Y. Xing, and Jian Wang. "A spin injector." Applied Physics Letters 85, no. 13 (September 27, 2004): 2553–55. http://dx.doi.org/10.1063/1.1793335.

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2

Tao, Bingshan, Philippe Barate, Xavier Devaux, Pierre Renucci, Julien Frougier, Abdelhak Djeffal, Shiheng Liang, et al. "Atomic-scale understanding of high thermal stability of the Mo/CoFeB/MgO spin injector for spin-injection in remanence." Nanoscale 10, no. 21 (2018): 10213–20. http://dx.doi.org/10.1039/c8nr02250j.

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3

WANG, Y., A. P. LIU, J. BAO, X. G. XU, and Y. JIANG. "SPIN INJECTION INTO TWO-DIMENSIONAL ELECTRON GAS THROUGH A SPIN-FILTERING INJECTOR." Modern Physics Letters B 22, no. 16 (June 30, 2008): 1535–45. http://dx.doi.org/10.1142/s0217984908016273.

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In this paper, large spin polarization and magnetoconductance in a ferromagnet (FM)/ferromagnetic insulator (FI)/two-dimensional electron gas (2DEG)/non-magnetic insulator (I)/FM hybrid structure are theoretically predicted by introducing a spin-filtering injector. In the framework of coherent tunneling model, the electron transmission probability, spin polarization and magnetoconductance in the hybrid structure all oscillate with the electron density within the 2DEG channel. A complete single-mode spin injection would be realized by designing a well-defined geometry to adjust the competition between the spin-dependent tunneling of the conductive electrons and spin-filtering effect of the FI barrier.

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4

Chi, Feng, Xiao-Ning Dai, and Lian-Liang Sun. "A quantum dot spin injector with spin bias." Applied Physics Letters 96, no. 8 (February 22, 2010): 082102. http://dx.doi.org/10.1063/1.3327807.

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5

Ariki, Taisei, Tatsuya Nomura, Kohei Ohnishi, and Takashi Kimura. "Effective modulation of spin accumulation using a ferromagnetic/nonmagnetic bilayer spin channel." Journal of Physics D: Applied Physics 55, no. 9 (November 18, 2021): 095302. http://dx.doi.org/10.1088/1361-6463/ac34aa.

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Abstract A lateral spin valve consisting of highly spin-polarized CoFeAl electrodes with a CoFeAl/Cu bilayer spin channel has been developed. Despite a large spin absorption into the CoFeAl capping channel layer, an efficient spin injection and detection using the CoFeAl electrodes enable us to observe a clear spin valve signal. We demonstrate that the nonlocal spin accumulation signal is significantly modulated depending on the relative angle of the magnetizations between the spin injector and absorber. The observed modulation phenomena is explained by the longitudinal and transverse spin absorption effects into the CoFeAl channel layer with the spin resistance model.

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6

Ved M. V., Dorokhin M. V., Lesnikov V. P., Kudrin A. V., Demina P. B., Zdoroveyshchev A. V., and Danilov Yu. A. "Circularly polarized electroluminescence at room temperature in heterostructures based on GaAs:Fe diluted magnetic semiconductor." Technical Physics Letters 48, no. 13 (2022): 76. http://dx.doi.org/10.21883/tpl.2022.13.53370.18836.

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In this work, we demonstrate the possibility of using a diluted magnetic semiconductor GaAs:Fe as a ferromagnetic injector in a spin light-emitting diode based on a GaAs/InGaAs quantum well heterostructure. It is shown that in such a device it is possible to observe partially circularly polarized electroluminescence at room temperature. Keywords: spin light-emitting diodes, diluted magnetic semiconductors, A3B5 semiconductors, spin injection.

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7

Giazotto, F., and F. S. Bergeret. "Quantum interference hybrid spin-current injector." Applied Physics Letters 102, no. 16 (April 22, 2013): 162406. http://dx.doi.org/10.1063/1.4802953.

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8

Salis, G., R. Wang, X. Jiang, R. M. Shelby, S. S. P. Parkin, S. R. Bank, and J. S. Harris. "Temperature independence of the spin-injection efficiency of a MgO-based tunnel spin injector." Applied Physics Letters 87, no. 26 (December 26, 2005): 262503. http://dx.doi.org/10.1063/1.2149369.

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9

Zholud, A., and S. Urazhdin. "Microwave generation by spin Hall nanooscillators with nanopatterned spin injector." Applied Physics Letters 105, no. 11 (September 15, 2014): 112404. http://dx.doi.org/10.1063/1.4896023.

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10

Zozoulenko, I. V., and M. Evaldsson. "Quantum antidot as a controllable spin injector and spin filter." Applied Physics Letters 85, no. 15 (October 11, 2004): 3136–38. http://dx.doi.org/10.1063/1.1804249.

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11

Patil, Tarkeshwar C. "Ferromagnetic Schottky Contact for GaN Based Spin Devices." WSEAS TRANSACTIONS ON ELECTRONICS 12 (August 2, 2021): 55–60. http://dx.doi.org/10.37394/232017.2021.12.8.

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In this paper, ferromagnetic Schottky contacts for GaN based spin injection are being studied. The electrical characterization of this Co/n-GaN and Fe/n-GaN Schottky contacts showing the zero-bias barrier height comes closer to unity as the temperature is increased. Also, the Richardson constant is extracted for this Schottky contact. Both the zero-bias barrier height and the Richardson constant are verified both experimentally as well as theoretically. Thus, this Schottky contacts will serve as spin injector for GaN based spin devices specifically for GaCrN based devices

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12

Ведь, М. В., М. В. Дорохин, В. П. Лесников, А. В. Кудрин, П. Б. Дёмина, А. В. Здоровейщев, Д. А. Павлов, Ю. В. Усов, В. Е. Милин та Ю. А. Данилов. "Циркулярно поляризованная электролюминесценция спиновых светодиодов c ферромагнитным инжектором (In,Fe)Sb". Письма в журнал технической физики 46, № 14 (2020): 17. http://dx.doi.org/10.21883/pjtf.2020.14.49660.18313.

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The possibility of using a diluted magnetic semiconductor (In,Fe)Sb as a functional layer for use in spintronics, namely, as a ferromagnetic injector in a spin light emitting diode, has been investigated. We studied the luminescent characteristics, as well as the temperature dependence of the circular polarization degree of a spin LED electroluminescence with an (In,Fe)Sb injector.

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13

Saito, H., J. C. Le Breton, V. Zayets, Y. Mineno, S. Yuasa, and K. Ando. "Efficient spin injection into semiconductor from an Fe/GaOx tunnel injector." Applied Physics Letters 96, no. 1 (January 4, 2010): 012501. http://dx.doi.org/10.1063/1.3282799.

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14

Nishizawa, Nozomi, Kazuhiro Nishibayashi, and Hiro Munekata. "Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes." Proceedings of the National Academy of Sciences 114, no. 8 (February 7, 2017): 1783–88. http://dx.doi.org/10.1073/pnas.1609839114.

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We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlOxspin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas it increases steeply and reaches close to the pure CP whenJ> 100 A/cm2. There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results.

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15

Slobodskyy, A., C. Gould, T. Slobodskyy, G. Schmidt, L. W. Molenkamp, and D. Sánchez. "Resonant tunneling diode with spin polarized injector." Applied Physics Letters 90, no. 12 (March 19, 2007): 122109. http://dx.doi.org/10.1063/1.2715120.

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16

Wang, R., X. Jiang, R. M. Shelby, R. M. Macfarlane, S. S. P. Parkin, S. R. Bank, and J. S. Harris. "Increase in spin injection efficiency of a CoFe∕MgO(100) tunnel spin injector with thermal annealing." Applied Physics Letters 86, no. 5 (January 31, 2005): 052901. http://dx.doi.org/10.1063/1.1787896.

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17

Höink, V., J. W. Lau, and W. F. Egelhoff. "Micromagnetic simulations of a dual-injector spin transfer torque operated spin logic." Applied Physics Letters 96, no. 14 (April 5, 2010): 142508. http://dx.doi.org/10.1063/1.3373588.

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18

Tao, B. S., P. Barate, J. Frougier, P. Renucci, B. Xu, A. Djeffal, H. Jaffrès, et al. "Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector." Applied Physics Letters 108, no. 15 (April 11, 2016): 152404. http://dx.doi.org/10.1063/1.4945768.

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19

Haidar, S. M., R. Iguchi, A. Yagmur, J. Lustikova, Y. Shiomi, and E. Saitoh. "Reducing galvanomagnetic effects in spin pumping measurement with Co75Fe25 as a spin injector." Journal of Applied Physics 117, no. 18 (May 14, 2015): 183906. http://dx.doi.org/10.1063/1.4921359.

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20

Yuan, Si-Peng, Chao Shen, Hou-Zhi Zheng, Qi Liu, Li-Guo Wang, Kang-Kang Meng, and Jian-Hua Zhao. "Spin-polarized injection into a p-type GaAs layer from a Co2MnAl injector." Chinese Physics B 22, no. 4 (April 2013): 047202. http://dx.doi.org/10.1088/1674-1056/22/4/047202.

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21

Rykov, A. V., M. V. Dorokhin, P. B. Demina, A. V. Zdoroveyshchev, and M. V. Ved’. "Temperature stabilization of spin-LEDs with a CoPt injector." Journal of Physics: Conference Series 816 (March 2017): 012034. http://dx.doi.org/10.1088/1742-6596/816/1/012034.

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22

Dao, T. Phuong, Marvin Müller, Zhaochu Luo, Manuel Baumgartner, Aleš Hrabec, Laura J. Heyderman, and Pietro Gambardella. "Chiral Domain Wall Injector Driven by Spin–Orbit Torques." Nano Letters 19, no. 9 (August 16, 2019): 5930–37. http://dx.doi.org/10.1021/acs.nanolett.9b01504.

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23

Mathew, Shinto P., Prakash Chandra Mondal, Hagay Moshe, Yitzhak Mastai, and Ron Naaman. "Non-magnetic organic/inorganic spin injector at room temperature." Applied Physics Letters 105, no. 24 (December 15, 2014): 242408. http://dx.doi.org/10.1063/1.4904941.

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24

Csonka, Szabolcs, Ireneusz Weymann, and Gergely Zarand. "An electrically controlled quantum dot based spin current injector." Nanoscale 4, no. 12 (2012): 3635. http://dx.doi.org/10.1039/c2nr30399j.

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25

Sidorova, T. N., A. L. Danilyuk, and V. E. Borisenko. "Spin-dependant tunneling to the surface states of titanium dioxide." Doklady of the National Academy of Sciences of Belarus 64, no. 6 (December 31, 2020): 670–77. http://dx.doi.org/10.29235/1561-8323-2020-64-6-670-677.

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Анотація:

Results of the simulation of spin-dependant tunneling of electrons to the surface states of the titanium dioxide, which are created by adsorbed organic impurities are performed. Tunneling transparency for sunlight generated electrons is calculated by the Phase function method. A ferromagnetic film is considered to be an injector of spin-dependent electrons to the titanium dioxide. It is shown that electron spin polarization at the surface states reaches 10–25 %. It can contribute to the spin enhanced catalysis peeling a surface from organic impurities.

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26

Sidorova, T. N., A. L. Danilyuk, and V. E. Borisenko. "Spin-dependant tunneling to the surface states of titanium dioxide." Doklady of the National Academy of Sciences of Belarus 64, no. 6 (December 31, 2020): 670–77. http://dx.doi.org/10.29235/1561-8323-2020-64-6-670-677.

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Анотація:

Results of the simulation of spin-dependant tunneling of electrons to the surface states of the titanium dioxide, which are created by adsorbed organic impurities are performed. Tunneling transparency for sunlight generated electrons is calculated by the Phase function method. A ferromagnetic film is considered to be an injector of spin-dependent electrons to the titanium dioxide. It is shown that electron spin polarization at the surface states reaches 10–25 %. It can contribute to the spin enhanced catalysis peeling a surface from organic impurities.

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27

Zou, J., I. Sosnin, and V. T. Petrashov. "Double-injector source of spin polarized current with controllable polarization." Applied Physics Letters 89, no. 2 (July 10, 2006): 023505. http://dx.doi.org/10.1063/1.2220547.

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28

Bala Kumar, S., S. G. Tan, M. B. A. Jalil, and J. Guo. "Nanopillar ferromagnetic nanostructure as highly efficient spin injector into semiconductor." Applied Physics Letters 91, no. 14 (October 2007): 142110. http://dx.doi.org/10.1063/1.2795341.

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29

Ando, K., S. Takahashi, J. Ieda, H. Kurebayashi, T. Trypiniotis, C. H. W. Barnes, S. Maekawa, and E. Saitoh. "Electrically tunable spin injector free from the impedance mismatch problem." Nature Materials 10, no. 9 (June 26, 2011): 655–59. http://dx.doi.org/10.1038/nmat3052.

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30

Lorenzon, Wolfgang. "Opportunities with Polarized Hadron Beams." International Journal of Modern Physics: Conference Series 40 (January 2016): 1660108. http://dx.doi.org/10.1142/s2010194516601083.

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Spin physics at future hadron facilities provide unique opportunities for the study of QCD well beyond those available at existing facilities. Opportunities with polarized protons in the Fermilab Main Injector are discussed that encompass polarized Drell-Yan scattering of unprecedented precision and also enable measurements of transversity, helicty and other transverse momentum dependent distributions. Forthcoming measurements at COMPASS-II that aim to test fundamental predictions of non-perturbative QCD, and complementary studies at RHIC-Spin that address, among others, open puzzles such as the sharing of the nucleon spin among its constituents are also discussed.

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31

Maji, Nilay, Bishnu Chakraborty, and Tapan Kumar Nath. "Experimental demonstration of electrical spin injection into semiconductor employing conventional three-terminal and non-local Hanle devices using spin gapless semiconductor as ferromagnetic injector." Applied Physics Letters 122, no. 9 (February 27, 2023): 092404. http://dx.doi.org/10.1063/5.0133013.

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Here, the deposition of a polycrystalline thin film of a noble promising alloy Ti2CoSi (TCS) on a p-Si substrate has been reported, and its spin gapless semiconducting characteristics have been investigated experimentally. The structural, magnetic, and electronic transport features of the TCS film have been investigated in detail followed by its implementation as a ferromagnetic tunnel contact for proficient spin accumulation into a semiconductor employing both conventional three-terminal and non-local (NL) Hanle measurements. As we can avoid noticing erroneous effects like anisotropic magnetoresistance of the ferromagnetic electrodes, the NL-Hanle experiment has been established to be the most effective method for demonstrating true spin transport in semiconductors.

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32

Wu, Hao, HouZhi Zheng, Jian Liu, GuiRong Li, Ping Xu, Hui Zhu, Hao Zhang, and JianHua Zhao. "Spin injection in the multiple quantum-well LED structure with the Fe/AlO x injector." Science China Physics, Mechanics and Astronomy 53, no. 4 (April 2010): 649–53. http://dx.doi.org/10.1007/s11433-010-0164-4.

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33

Borukhovich, Arnold S. "Europium monoxide as a basis for creating a high-temperature spin injector in the semiconductor spintronics." Modern Electronic Materials 6, no. 3 (September 30, 2020): 113–23. http://dx.doi.org/10.3897/j.moem.6.54583.

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The results of the creation of a high-temperature spin injector based on EuO: Fe composite material are discussed. Their magnetic, electrical, structural and resonance parameters are given in a wide range of temperatures and an external magnetic field. A model calculation of the electronic spectrum of the solid solution Eu–Fe–O, responsible for the manifestation of the outstanding properties of the composite, is performed. The possibility of creating semiconductor spin electronics devices capable of operating at room temperature is shown.

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34

Borukhovich, Arnold S. "Europium monoxide as a basis for creating a high-temperature spin injector in the semiconductor spintronics." Modern Electronic Materials 6, no. 3 (September 30, 2020): 113–23. http://dx.doi.org/10.3897/j.moem.6.3.54583.

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The results of the creation of a high-temperature spin injector based on EuO: Fe composite material are discussed. Their magnetic, electrical, structural and resonance parameters are given in a wide range of temperatures and an external magnetic field. A model calculation of the electronic spectrum of the solid solution Eu–Fe–O, responsible for the manifestation of the outstanding properties of the composite, is performed. The possibility of creating semiconductor spin electronics devices capable of operating at room temperature is shown.

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35

Jiang, X., R. Wang, R. M. Shelby, and S. S. P. Parkin. "Highly efficient room-temperature tunnel spin injector using CoFe/MgO(001)." IBM Journal of Research and Development 50, no. 1 (January 2006): 111–20. http://dx.doi.org/10.1147/rd.501.0111.

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36

Ramdani, R. M., E. Gil, Y. Andre, A. Trassoudaine, D. Castelluci, D. Paget, A. C. H. Rowe, and B. Gérard. "Selective epitaxial growth of GaAs tips for local spin injector applications." Journal of Crystal Growth 306, no. 1 (August 2007): 111–16. http://dx.doi.org/10.1016/j.jcrysgro.2007.03.024.

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37

Arscott, Steve, Emilien Peytavit, Duong Vu, Alistair C. H. Rowe, and Daniel Paget. "Fluidic assembly of hybrid MEMS: a GaAs-based microcantilever spin injector." Journal of Micromechanics and Microengineering 20, no. 12 (November 29, 2010): 129803. http://dx.doi.org/10.1088/0960-1317/20/12/129803.

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38

Arscott, Steve, Emilien Peytavit, Duong Vu, Alistair C. H. Rowe, and Daniel Paget. "Fluidic assembly of hybrid MEMS: a GaAs-based microcantilever spin injector." Journal of Micromechanics and Microengineering 20, no. 2 (January 18, 2010): 025023. http://dx.doi.org/10.1088/0960-1317/20/2/025023.

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39

Zhang, Zheng-Zhong, and Hao Liu. "Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet*." Chinese Physics B 30, no. 6 (June 1, 2021): 067501. http://dx.doi.org/10.1088/1674-1056/abd9b1.

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40

Ye, Cheng-Zhi, Yi-Hang Nie, and Jiu-Qing Liang. "A pure spin-current injector of semiconductor quantum dots with Andreev reflection and Rashba spin—orbit coupling." Chinese Physics B 20, no. 12 (December 2011): 127202. http://dx.doi.org/10.1088/1674-1056/20/12/127202.

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41

Ведь, М. В., М. В. Дорохин, В. П. Лесников, А. В. Кудрин, П. Б. Дёмина, А. В. Здоровейщев та Ю. А. Данилов. "Циркулярно поляризованная электролюминесценция при комнатной температуре в гетероструктурах на основе разбавленного магнитного полупроводника GaAs:Fe". Письма в журнал технической физики 47, № 20 (2021): 38. http://dx.doi.org/10.21883/pjtf.2021.20.51613.18836.

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Анотація:

In this work, we demonstrate the possibility of using a diluted magnetic semiconductor GaAs:Fe as a ferromagnetic injector in a spin light-emitting diode based on a GaAs/InGaAs quantum well heterostructure. It is shown that in such a device it is possible to observe partially circularly polarized electroluminescence at room temperature.

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42

Arscott, Steve, Emilien Peytavit, Duong Vu, Alistair C. H. Rowe, and Daniel Paget. "GaAs spin injector microcantilever probe assembly via a releasable “epitaxial patch technology”." Procedia Engineering 5 (2010): 1039–42. http://dx.doi.org/10.1016/j.proeng.2010.09.287.

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43

Kwon, J., R. E. Goacher, E. D. Fraser, L. Schweidenback, A. H. Russ, J. B. Hatch, A. Petrou, J. A. Gardella, and H. Luo. "Study of MnAs as a Spin Injector for GaAs-Based Semiconductor Heterostructures." Journal of Low Temperature Physics 169, no. 5-6 (September 5, 2012): 377–85. http://dx.doi.org/10.1007/s10909-012-0674-8.

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44

Schröter, Niels B. M., Iñigo Robredo, Sebastian Klemenz, Robert J. Kirby, Jonas A. Krieger, Ding Pei, Tianlun Yu, et al. "Weyl fermions, Fermi arcs, and minority-spin carriers in ferromagnetic CoS2." Science Advances 6, no. 51 (December 2020): eabd5000. http://dx.doi.org/10.1126/sciadv.abd5000.

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Magnetic Weyl semimetals are a newly discovered class of topological materials that may serve as a platform for exotic phenomena, such as axion insulators or the quantum anomalous Hall effect. Here, we use angle-resolved photoelectron spectroscopy and ab initio calculations to discover Weyl cones in CoS2, a ferromagnet with pyrite structure that has been long studied as a candidate for half-metallicity, which makes it an attractive material for spintronic devices. We directly observe the topological Fermi arc surface states that link the Weyl nodes, which will influence the performance of CoS2 as a spin injector by modifying its spin polarization at interfaces. In addition, we directly observe a minority-spin bulk electron pocket in the corner of the Brillouin zone, which proves that CoS2 cannot be a true half-metal.

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45

Venkatachalam, Palaniappan, Srikrishna Sahu, and Kameswararao Anupindi. "Numerical investigation on the role of a mixer on spray impingement and mixing in channel cross-stream airflow." Physics of Fluids 34, no. 3 (March 2022): 033316. http://dx.doi.org/10.1063/5.0083960.

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The present study numerically investigates the influence of introducing a spin-type mixer and different angular orientations of the mixer blades on the spray-wall interaction and mixing, following cross-stream injection of a pulsed spray into airflow in a circular duct. This is relevant to the Selective Catalytic Reduction system in diesel engines for exhaust gas after-treatment. The spin-type static mixer is located downstream of the injector and generates a swirling airflow in the duct. All simulations were carried out using ANSYS Fluent V18.0. The standard k– ω model is used to simulate the turbulent continuous phase flow, while the discrete phase model is employed to track the spray droplets. The Taylor Analogy Breakup and Kuhnke wall film models are adopted to model droplet breakup and wall-film formation, respectively. First, the swirling airflow characteristics without spray injection are validated against in-house particle image velocimetry measurements. Second, the spray computations are compared with the experiment. Overall, good agreement between simulation and experiment is achieved. Furthermore, the choice of water and urea water solution injection liquid on the in-channel spray characteristics is also studied. The main focus of the present work is on the study of the influence of spin mixer clocking on the post-impingement spray evolution, droplet redistribution and mixing, and wall-film characteristics. The results show that the choice of the angular orientation of the mixer governs the extent of droplet deposition and splashing on the mixer blades and, as a result, strongly influences the spatial uniformity of droplets and ammonia species at the channel exit.

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46

Dorokhin, M. V., Y. A. Danilov, Alexei V. Kudrin, E. I. Malysheva, M. M. Prokof’eva, and B. N. Zvonkov. "Fabrication of InGaAs/GaAs Light-Emitting Diodes with GaMnSb Ferromagnetic Injector Layer." Solid State Phenomena 190 (June 2012): 89–92. http://dx.doi.org/10.4028/www.scientific.net/ssp.190.89.

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The electroluminescence properties of ferromagnetic GaMnSb/GaAs diodes have been investigated. It has been found that diodes properties are significantly dependent on GaMnSb layer electrical properties. The intensity of electroluminescence of the diode with semiconductor GaMnSb contact is relatively low, that is due to a high potential barrier at the interface. In case of metallic GaMnSb/GaAs contact high hole injection efficiency provides relatively high electroluminescence intensity. Investigated light-emitting diodes can be prospective for investigation of spin injection effects.

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47

Kemei, S. K., M. S. K. Kirui, F. G. Ndiritu, R. G. Ngumbu, P. M. Odhiambo, D. M. G. Leite, A. L. J. Pereira, and J. H. Dias Da Silva. "Young’s modulus and creep compliance of GaAs and Ga1-xMnxAs ferromagnetic thin films under thermal stress at varied manganese doping levels." Materials Science-Poland 33, no. 2 (June 1, 2015): 340–47. http://dx.doi.org/10.1515/msp-2015-0053.

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AbstractDynamical mechanical analysis yields information about the mechanical properties of a material as a function of deforming factors, such as temperature, oscillating stress and strain amplitudes. GaAs and Mn-doped GaAs at varied levels, used in making electronic devices, suffer from damage due to changes in environmental temperatures. This is a defective factor experienced during winter and summer seasons. Hence, there was a need to establish the best amount of manganese to be doped in GaAs so as to obtain a mechanically stable spin injector material to make electronic devices. Mechanical properties of Ga1-xMnxAs spin injector were studied in relation to temperatures above room temperature (25 °C). Here, creep compliance, Young’s moduli and creep recovery for all studied samples with different manganese doping levels (MDLs) were determined using DMA 2980 Instrument from TA instruments Inc. The study was conducted using displace-recover programme on DMA creep mode with a single cantilever clamp. The samples were prepared using RF sputtering techniques. From the creep compliance study it was found that MDL of 10 % was appropriate at 30 °C and 40 °C. The data obtained can be useful to the spintronic and electronic device engineers in designing the appropriate devices to use at 30 °C and above or equal to 40 °C.

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48

Ved, M. V., M. V. Dorokhin, V. P. Lesnikov, A. V. Kudrin, P. B. Demina, A. V. Zdoroveishchev, D. A. Pavlov, Yu V. Usov, V. E. Milin, and Yu A. Danilov. "Circularly Polarized Electroluminescence of Spin LEDs with a Ferromagnetic (In, Fe)Sb Injector." Technical Physics Letters 46, no. 7 (July 2020): 691–94. http://dx.doi.org/10.1134/s1063785020070299.

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49

Terent'ev, Ya V., A. A. Toropov, S. V. Sorokin, A. V. Lebedev, S. V. Ivanov, P. S. Kopev, I. A. Buyanova, W. M. Chen, and B. Monemar. "Semimagnetic ZnMnSe/CdSe Fractional Monolayer Superlattice as an Injector of Spin-Polarized Carriers." physica status solidi (b) 229, no. 2 (January 2002): 765–68. http://dx.doi.org/10.1002/1521-3951(200201)229:2<765::aid-pssb765>3.0.co;2-#.

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50

Reza, Ahmed Kamal, and Kaushik Roy. "Topological semi-metal Na3Bi as efficient spin injector in current driven magnetic tunnel junction." Journal of Applied Physics 126, no. 23 (December 21, 2019): 233901. http://dx.doi.org/10.1063/1.5087077.

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