Дисертації з теми "Solid thin film metals"
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Duff, Daniel Gordon. "Colloidal solutions and thin films of metals." Thesis, University of Cambridge, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333275.
Повний текст джерелаZaidi, Syed Zulfiqar Ali. "Electrical and optical properties of some metal/SiOâ†x thin film systems." Thesis, Brunel University, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.307488.
Повний текст джерелаMatz, Dallas Lee. "Raman Spectroscopic Investigations of the Interfacial Chemistry of Solid-State Organic Thin Films with Vapor Deposited Metals for Organic Photovoltaics." Diss., The University of Arizona, 2012. http://hdl.handle.net/10150/268594.
Повний текст джерелаRUSSAT, JEAN. "Contribution a l'etude, par spectroscopie de photoelectrons, d'interfaces polymere-metal : application au cas de l'acide polyamique et du polyimide." Paris 7, 1987. http://www.theses.fr/1987PA077237.
Повний текст джерелаGuttman, Jeremy. "Polymer-based Tunnel Diodes Fabricated using Ultra-thin, ALD Deposited, Interfacial Films." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1469125487.
Повний текст джерелаTriana, Carlos A. "Atomic short-range order, optical and electronic properties of amorphous transition metal oxides : An experimental and theoretical study of amorphous titanium aTiO2 and tungsten aWO3 solid thin-film oxides." Doctoral thesis, Uppsala universitet, Fasta tillståndets fysik, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-318193.
Повний текст джерелаRoss, Caroline Anne. "Electromigration in thin metal films." Thesis, University of Cambridge, 1989. https://www.repository.cam.ac.uk/handle/1810/250938.
Повний текст джерелаMaaroof, Abbas I. "Optical and electrical properties of ultra thin metal films and multilayers." Thesis, University of Reading, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.252236.
Повний текст джерелаDastoor, Paul Christopher. "The epitaxial growth of thin metal films studied by helium atom scattering." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.337943.
Повний текст джерелаGarman, Christopher James. "Electrical characterization of thin film nanostructure templates." Morgantown, W. Va. : [West Virginia University Libraries], 2001. http://etd.wvu.edu/templates/showETD.cfm?recnum=2188.
Повний текст джерелаTitle from document title page. Document formatted into pages; contains vi, 70 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 57-61).
Bozeat, Robert John. "Thin film optical waveguides on silicon." Thesis, University of Nottingham, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.320551.
Повний текст джерелаTucker, Nigel Paul. "Magnetic structure of Gd thin-film surfaces." Thesis, University of Liverpool, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.364156.
Повний текст джерелаGu, Erdan. "Studies in thin film systems and X-ray multilayer film design." Thesis, University of Aberdeen, 1992. http://digitool.abdn.ac.uk/R?func=search-advanced-go&find_code1=WSN&request1=AAIU547604.
Повний текст джерелаSugden, Stephen. "Thin film adhesion modification by MeV ions." Thesis, University of Surrey, 1991. http://epubs.surrey.ac.uk/843281/.
Повний текст джерелаPottage, John Mark. "Analysis of thin-film photonic crystal microstructures." Thesis, University of Bath, 2003. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.269994.
Повний текст джерелаRocha, Luciana Sarabando da. "Thin mercury film electrodes in dynamic speciation studies of metals." Doctoral thesis, Universidade de Aveiro, 2009. http://hdl.handle.net/10773/3083.
Повний текст джерелаNo presente trabalho, foi avaliado o desempenho e a aplicabilidade do eléctrodo de filme fino de mercúrio, em estudos de especiação dinâmica de metais vestigiais. Para tal, foram utilizadas duas técnicas electroanalíticas de redissolução: a clássica Voltametria de Redissolução Anódica (ASV) e a recentemente desenvolvida, Cronopotenciometria de Redissolução com varrimento do potencial de deposição (SSCP). As propriedades de troca-iónica e de transporte de massa de películas mistas preparadas a partir de dois polímeros com características distintas, o Nafion (NA) e o 4-Poliestireno sulfonato de sódio (PSS), foram avaliadas, antes da sua aplicação no âmbito da especiação de metais. Estas películas de NA-PSS demonstraram uma elevada sensibilidade, reprodutibilidade, estabilidade mecânica, bem como, propriedades de anti-bloqueio adequadas na modificação química do eléctrodo de filme fino de mercúrio (TMFE) e, na sua aplicação na determinação de catiões metálicos vestigiais em amostras complexas, por ASV. Para além disso, o desempenho de membranas do polielectrólito PSS em estudos de voltametria de troca-iónica (IEV) foi estudado. O objectivo desta investigação foi reunir as condições ideais na preparação de películas de PSS estáveis e com uma densidade de carga negativa elevada, de modo a aumentar a acumulação electrostática de catiões metálicos no filme polimérico e por conseguinte, conseguir incrementos no sinal voltamétrico. O desempenho e aplicabilidade do TMFE em estudos de especiação de metais vestigiais foram extendidos à SSCP como técnica analítica. Dada a elevada sensibilidade e resolução evidenciada pelo TMFE, este revelou ser uma alternativa adequada aos eléctrodos de mercúrio convencionais, podendo ser utilizado durante um dia de trabalho, sem degradação aparente do sinal analítico de SCP. As curvas de SSCP obtidas experimentalmente utilizando o TMFE estavam em concordância com aquelas previstas pela teoria. Para além disso, a constante de estabilidade (K) calculada a partir do desvio do potencial de meia-onda, para dois sistemas metal-complexo lábeis, aproxima-se não só do valor teórico, como também daquele obtido utilizando o eléctrodo de mercúrio de gota suspensa (HMDE). Adicionalmente, o critério experimental de labilidade inerente a esta técnica foi validado e o grau de labilidade para um dado sistema metal-complexo foi determinado, utilizando o filme fino de mercúrio depositado sob um eléctrodo rotativo (TMF-RDE). Este eléctrodo é muito útil na determinação de parâmetros cinéticos, como é o caso da constante de velocidade de associação (ka), uma vez que as condições hidrodinâmicas, durante a etapa de deposição, se encontram bem definidas.
In the present work the performance and applicability of the thin mercury film electrode (TMFE) in the dynamic speciation of trace metals was investigated. Two different electroanalytical stripping techniques were used: the classical anodic stripping voltammetry (ASV) and a recent developed technique, scanning stripping chronopotentiometry (SSCP). The ion-exchange and the mass transport features of novel mixed coatings of two sulfonated cation-exchange polymers with dissimilar characteristics, Nafion (NA) and poly(sodium 4-styrenesulfonate) (PSS) were evaluated, prior to its application in the field of trace metal analysis. Suitable NA-PSS polymer coatings could be used in the modification of TMFE, presenting a high sensitivity, reproducibility, mechanical stability and adequate antifouling properties in the ASV determination of trace metal cations in complex media. Also the features of the PSS polyelectrolyte layers for ion-exchange voltammetry (IEV) were evaluated. The goal was to search for the best conditions to obtain stable PSS coated electrodes, which could present high negative charge densities in order to enhance the electrostatic accumulation of cations within the film, thus enlarging the ASV signal. The applicability and performance of the TMFE in the trace metal speciation studies, by SSCP, were for the first time exploited. The optimized TMFE presented a high sensitivity and resolution, being an excellent complement to the conventional mercury electrodes and could be use for 1-day term with no significant variation in the SCP analytical signal and no apparent degradation. The calculated SSCP curves were in excellent agreement with experimental data at the TMFE and the stability constant (K), calculated from the shift in the SSCP half-wave potential, of two labile metal-complex systems were in good agreement with the ones obtained using the conventional Hanging mercury drop electrode (HMDE) and those predicted by theory . Additionally, the experimental lability diagnosis inherent to the SSCP technique was validated and a rigorous quantification of the lability degree was made. Due to the well defined hydrodynamic conditions at the thin mercury film rotating disk electrode (TMF-RDE), during the deposition step, this electrode is quite valuable in the determination of kinetic parameters, like the association rate constants (ka).
Beckel, Daniel. "Thin film cathodes for micro solid oxide fuel cells." kostenfrei, 2007. http://e-collection.ethbib.ethz.ch/view/eth:29741.
Повний текст джерелаFlack, Natasha. "Thin film components for solid oxide fuel Cells (SOFCs)." Thesis, University of Liverpool, 2014. http://livrepository.liverpool.ac.uk/2007271/.
Повний текст джерелаMcQuillan, Scott. "Electromagnetic waves in Langmuir Blodgett thin film microstructures." Thesis, Queen Mary, University of London, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.271335.
Повний текст джерелаSethu, Murugesan. "Performance studies of thin film electroluminescent (TFEL) devices." Thesis, Nottingham Trent University, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.250453.
Повний текст джерелаLee, Myoung-Bok. "The growth and spectroscopic characterisation of ultra-thin aluminium oxide films on single crystal metal surfaces." Thesis, University of Liverpool, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.309877.
Повний текст джерелаBarnes, C. J. "Adsorption of metals on single crystal substrates." Thesis, University of Liverpool, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234834.
Повний текст джерелаLoh, Kian Ping. "Growth studies and surface modification of thin film diamonds." Thesis, University of Oxford, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.320658.
Повний текст джерелаFarrar, Simon Richard. "Excimer laser ablation characterisation for superconducting thin film applications." Thesis, University of Hull, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.282366.
Повний текст джерелаXu, Jiansheng. "Characterisation and magneto-optical enhancement of thin film TbFeCo." Thesis, Queen's University Belfast, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.317538.
Повний текст джерелаRose, John. "Nanomagnetic and nanostructural studies of thin film magnetic systems." Thesis, University of Glasgow, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.241740.
Повний текст джерелаZahrir, A. "Thin film growth and characterization on high temperature superconductors." Thesis, University of Bristol, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.335477.
Повний текст джерелаHuq, Syed Ejazul. "Thin film deposition by the ionized cluster beam method." Thesis, University of Cambridge, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.304288.
Повний текст джерелаCoxon, Penelope Anne. "Polycrystalline silicon thin-film transistors for large-scale microelectronics." Thesis, University of Cambridge, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358595.
Повний текст джерелаYalamanchili, Hyma. "Dynamic bandgap tuning of solid thin film photonic crystal structures." Morgantown, W. Va. : [West Virginia University Libraries], 2010. http://hdl.handle.net/10450/10976.
Повний текст джерелаTitle from document title page. Document formatted into pages; contains viii, 95 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 89-95).
Simrick, Neil Jonathan. "Patterned thin film cathodes for micro-solid oxide fuel cells." Thesis, Imperial College London, 2010. http://hdl.handle.net/10044/1/11910.
Повний текст джерелаAkizuki, Makoto. "Gas Cluster Ion-Solid Surface Interaction and Thin Film Formation." Kyoto University, 1999. http://hdl.handle.net/2433/181783.
Повний текст джерелаMcNeill, Debra. "Investigation of single shot laser ablation of thin metal films using non-resonant and surface plasmon absorption." Thesis, Queen's University Belfast, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.361276.
Повний текст джерелаLoto, Oluwasayo. "Transistors en diamant pour électronique de puissance : études des matériaux et procédés technologiques." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT129.
Повний текст джерелаDue to the increase in climate change awareness and development of renewable energy sources, there is an increasing demand for more reliable and efficient power electronics at the point generation, transmision and consumption. Power electronic devices based on wide bandgap semiconductor materials (SiC, GaN and Diamond) will result in substantial improvements in the performance of power electronics systems compared to silicon based devices. They will offer higher blocking voltages, improved efficiency and reliability, as well as reduced thermal requirements.Diamond, though mostly known for its gem value has electrical and thermal properties that are highly beneficial for power electronics. Various device types and device architecture such as diodes, MESFETs and MOSFETS have been made using semiconducting diamond with promising electrical characteristics that could see it incorporated into systems. A pseudo vertical diamond MOSFET device offers possible high current density as well low resistance and high breakdown values needed in high voltage power systems.The aim of this work is to fabricate the first pseudovertical diamond power MOSFET with breakdown values of up to 6.5 kV (20 mOhm.cm-2, 200°C. This work focuses on mastering the series of process involved in the device realization from substrate characterization through epilayer growth to the device microfabrication and the characterization.In this thesis, the detailed steps involved in realizing the pseudovertical power MOSFET has be presented and three critical challenges in the device realization namely substrate related issues, defect propagation through stacked epilayers and the gate oxide reliabiliy has been addressed. The choice of quality substrates free of polishing defects and with low dislocation densities is needed for quality epilayer growth. Different substrates has been procured and characterized. The best substrate type for quality epilayer growth determined after characterization by x-ray topography, cathodoluminescence and electrical measurements have been proposed. Defects propagation was observed in the four stacked epilayer growth needed for the pseudovertical MOSFET transistor. The occurence of defects seems to arise from different impurity concentrations and doping type leading to lattice mismatch and strain in the layers. X-ray topography and rocking curve imaging has been employed to study the grown layers. A method for improved stacked layer growth has also been proposed. The reliability of the gate stack is usually a concern for MOS based devices. The shift in the threshold voltage during operation is a consequence of oxide and interface charges in the device. A p-type MOSCAP device was used to study this phenomenon experimentally. The influence of high temperature post oxidation annealing was found to be beneficial for stable gate oxide parameters. The shift in the flatband voltage has also been monitored through bias stress measurements. The maximum effective charge 9.8E-11 cm-2 as a result of flatband shift was obtained. This value is the same order of magnitude as those observed in state of the art and commercially available SiC devices. All the steps necessary for the transistor fabrication has been developped independently , and technology has been validated by the fabrication and electrical characterization of MESFET and Schottky diodes
Heutz, Sandrine Elizabeth Monique. "Structural, spectroscopic and morphological properties of molecular thin film heterostructures." Thesis, Imperial College London, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.252184.
Повний текст джерелаSwift, Michael Joseph Robert. "Aspects of single crystal and thin film high field electroluminescence." Thesis, University of Hull, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.304437.
Повний текст джерелаKilvert, Paul Vyvyan Andrew. "The synthesis and evaluation of Langmuir-Blodgett thin film materials." Thesis, University of Hull, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.292691.
Повний текст джерелаConnolly, M. P. "Surface plasmon polaritons in thin film structures : calculations & experiment." Thesis, Queen's University Belfast, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333810.
Повний текст джерелаAl-Samarrie, A. K. "The application of thin film and microwave technology in instrumentation." Thesis, University of Salford, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.334054.
Повний текст джерелаGottschalg, Ralph. "Environmental influences on the performance of thin-film solar cells." Thesis, Loughborough University, 2001. https://dspace.lboro.ac.uk/2134/35675.
Повний текст джерелаSchauer, Janine-Christina. "PECVD-deposition and characterisation of C-Si thin film systems on metals." [S.l.] : [s.n.], 2007. http://deposit.ddb.de/cgi-bin/dokserv?idn=985145587.
Повний текст джерелаClough, Francis John. "The performance and stability of hydrogenated amorphous silicon thin film transistors." Thesis, University of Cambridge, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.386233.
Повний текст джерелаGiles, Luis Felipe. "Characterization and control of crystallographic defects in thin film SIMOX materials." Thesis, University of Surrey, 1994. http://epubs.surrey.ac.uk/844322/.
Повний текст джерелаHadland, Erik. "Thin Film van der Waals Heterostructures containing MoSe2 from Modulated Elemental Precursors." Thesis, University of Oregon, 2019. http://hdl.handle.net/1794/24520.
Повний текст джерела2021-04-30
Ginige, Ravin. "Switching phenomena in stearic acid MIM structures and conduction phenomena in stearic acid thin films on metal and semiconductor substrates." Thesis, Brunel University, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.277418.
Повний текст джерелаYoon, Jongsik. "Nanostructured thin films for solid oxide fuel cells." [College Station, Tex. : Texas A&M University, 2008. http://hdl.handle.net/1969.1/ETD-TAMU-3164.
Повний текст джерелаPohl, John E. T. "The electrical properties of bulk polycrystalline and thin film high temperature superconductors." Thesis, University of Nottingham, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.315041.
Повний текст джерелаMa, Jun. "The deposition and electro-optical properties of thin film zinc sulphide phosphors." Thesis, University of Ulster, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.388877.
Повний текст джерелаBayhan, Murat. "Preparation and characterisation of n-CdS/p-CdTe thin film solar cells." Thesis, Durham University, 1994. http://etheses.dur.ac.uk/1697/.
Повний текст джерелаKunz, Oliver Photovoltaics & Renewable Energy Engineering Faculty of Engineering UNSW. "Evaporated solid-phase crystallised poly-silicon thin film solar cells on glass." Publisher:University of New South Wales. Photovoltaics & Renewable Energy Engineering, 2009. http://handle.unsw.edu.au/1959.4/43644.
Повний текст джерела