Статті в журналах з теми "Solid-state electronics devices"

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1

Feng, Jinjun, Xinghui Li, Jiannan Hu, and Jun Cai. "General Vacuum Electronics." Journal of Electromagnetic Engineering and Science 20, no. 1 (January 31, 2020): 1–8. http://dx.doi.org/10.26866/jees.2020.20.1.1.

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The electron devices in which electrons do not collide with other particles or in which the collision probability is very small in the transport process can be theoretically regarded as general vacuum electron devices. General vacuum electron devices include microfabricated vacuum nano-electronic devices, which can work in atmosphere, and some solid-state electron devices with nanoscale channel for electrons whose material characteristics are close to those of vacuum channels. Vacuum nano-electron devices (e.g., nanotriodes) are expected to be the fundamental elements for high-speed, radiation-resistant large-scale vacuum integrated circuits. The solid-state electron devices with spin semiconductor materials, multiferroics or topological crystal insulators are quite different from traditional semiconductor devices and are expected to operate under novel principles. Understanding vacuum electron devices from a microcosmic perspective and understanding solid-state electron devices from a vacuum perspective will promote a union of vacuum electronics and microelectronics, as well as the formation and development of general vacuum electronics.
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2

Compagnoni, Christian Monzio, and Riichiro Shirota. "High-Density Solid-State Memory Devices and Technologies." Electronics 11, no. 4 (February 11, 2022): 538. http://dx.doi.org/10.3390/electronics11040538.

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3

Moth-Poulsen, Kasper, and Thomas Bjørnholm. "Molecular electronics with single molecules in solid-state devices." Nature Nanotechnology 4, no. 9 (August 30, 2009): 551–56. http://dx.doi.org/10.1038/nnano.2009.176.

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4

Tang, Haijun, Irfan Ahmed, Pargorn Puttapirat, Tianhao Wu, Yuwei lan, Yanpeng Zhang, and Enling Li. "Investigation of multi-bunching by generating multi-order fluorescence of NV center in diamond." Physical Chemistry Chemical Physics 20, no. 8 (2018): 5721–25. http://dx.doi.org/10.1039/c7cp08005k.

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5

Mustafa, F., and A. M. Hashim. "Plasma Wave Electronics: A Revival Towards Solid-State Terahertz Electron Devices." Journal of Applied Sciences 10, no. 14 (July 1, 2010): 1352–68. http://dx.doi.org/10.3923/jas.2010.1352.1368.

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6

Möschwitzer, Albrecht. "Book Review: Industrial Solid-State Electronics: Devices and Systems, 2nd Ed." International Journal of Electrical Engineering & Education 25, no. 1 (January 1988): 62. http://dx.doi.org/10.1177/002072098802500114.

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7

Yang, Yang. "A mini-review: emerging all-solid-state energy storage electrode materials for flexible devices." Nanoscale 12, no. 6 (2020): 3560–73. http://dx.doi.org/10.1039/c9nr08722b.

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8

Thomas, Rajesh, and G. Mohan Rao. "SnO2 nanowire anchored graphene nanosheet matrix for the superior performance of Li-ion thin film battery anode." Journal of Materials Chemistry A 3, no. 1 (2015): 274–80. http://dx.doi.org/10.1039/c4ta04836a.

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9

Hersam, M. C., and R. G. Reifenberger. "Charge Transport through Molecular Junctions." MRS Bulletin 29, no. 6 (June 2004): 385–90. http://dx.doi.org/10.1557/mrs2004.120.

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AbstractIn conventional solid-state electronic devices, junctions and interfaces play a significant if not dominant role in controlling charge transport. Although the emerging field of molecular electronics often focuses on the properties of the molecule in the design and understanding of device behavior, the effects of interfaces and junctions are often of comparable importance. This article explores recent work in the study of metal–molecule–metal and semiconductor–molecule–metal junctions. Specific issues include the mixing of discrete molecular levels with the metal continuum, charge transfer between molecules and semiconductors, electron-stimulated desorption, and resonant tunneling. By acknowledging the consequences of junction/interface effects, realistic prospects and limitations can be identified for molecular electronic devices.
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10

URCIUOLI, D. P., and VICTOR VELIADIS. "BI-DIRECTIONAL SCALABLE SOLID-STATE CIRCUIT BREAKERS FOR HYBRID-ELECTRIC VEHICLES." International Journal of High Speed Electronics and Systems 19, no. 01 (March 2009): 183–92. http://dx.doi.org/10.1142/s0129156409006242.

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Power electronics in hybrid-electric military ground vehicles require fast fault isolation, and benefit additionally from bi-directional fault isolation. To prevent system damage or failure, maximum fault current interrupt speeds in tens to hundreds of microseconds are necessary. While inherently providing bi-directional fault isolation, mechanical contactors and circuit breakers do not provide adequate actuation speeds, and suffer severe degradation during repeated fault isolation. Instead, it is desired to use a scalable array of solid-state devices as a solid-state circuit breaker (SSCB) having a collectively low conduction loss to provide large current handling capability and fast transition speed for current interruption. Although, both silicon-carbide (SiC) JFET and SiC MOSFET devices having high breakdown voltages and low drain-to-source resistances have been developed, neither device structure alone is capable of reverse blocking at full voltage. Limitations exist for using a dual common-source structure for either device type. Small-scale SSCB experiments were conducted using 0.03 cm2 normally-on SiC VJFETs. Based on results of these tests, a normally-on VJFET device modification is made, and a proposed symmetric SiC JFET is considered for this application.
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11

Nozariasbmarz, Amin, Ravi Anant Kishore, Wenjie Li, Yu Zhang, Luyao Zheng, Mohan Sanghadasa, Bed Poudel, and Shashank Priya. "Thermoelectric coolers for high-power-density 3D electronics heat management." Applied Physics Letters 120, no. 16 (April 18, 2022): 164101. http://dx.doi.org/10.1063/5.0088129.

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Future advancements in three-dimensional (3D) electronics require robust thermal management methodology. Thermoelectric coolers (TECs) are reliable and solid-state heat pumping devices with high cooling capacity that can meet the requirements of emerging 3D microelectronic devices. Here, we first provide the design of TECs for electronics cooling using a computational model and then experimentally validate the main predictions. Key device parameters such as device thickness, leg density, and contact resistance were studied to understand their influence on the performance of TECs. Our results show that it is possible to achieve high cooling power density through optimization of TE leg height and packing density. Scaling of TECs is shown to provide ultra-high cooling power density.
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12

Li, Shuo, Ting-Hsiang Chang, Yang Li, Meng Ding, Jie Yang, and Po-Yen Chen. "Stretchable Ti3C2Tx MXene microsupercapacitors with high areal capacitance and quasi-solid-state multivalent neutral electrolyte." Journal of Materials Chemistry A 9, no. 8 (2021): 4664–72. http://dx.doi.org/10.1039/d0ta10560k.

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13

Carbone, Marilena. "NiO-Based Electronic Flexible Devices." Applied Sciences 12, no. 6 (March 10, 2022): 2839. http://dx.doi.org/10.3390/app12062839.

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Personal, portable, and wearable electronics have become items of extensive use in daily life. Their fabrication requires flexible electronic components with high storage capability or with continuous power supplies (such as solar cells). In addition, formerly rigid tools such as electrochromic windows find new utilizations if they are fabricated with flexible characteristics. Flexibility and performances are determined by the material composition and fabrication procedures. In this regard, low-cost, easy-to-handle materials and processes are an asset in the overall production processes and items fruition. In the present mini-review, the most recent approaches are described in the production of flexible electronic devices based on NiO as low-cost material enhancing the overall performances. In particular, flexible NiO-based all-solid-state supercapacitors, electrodes electrochromic devices, temperature devices, and ReRAM are discussed, thus showing the potential of NiO as material for future developments in opto-electronic devices.
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14

Pan, Zhenghui, Jie Yang, Yifu Zhang, Xiaorui Gao, and John Wang. "Quasi-solid-state fiber-shaped aqueous energy storage devices: recent advances and prospects." Journal of Materials Chemistry A 8, no. 14 (2020): 6406–33. http://dx.doi.org/10.1039/c9ta13887k.

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The on-going surge in wearable electronics has inspired ever-increasing rise in requirement for quasi-solid-state fiber-shaped energy storage devices, which possess 1D unique architecture with a tiny volume, and remarkable flexibility.
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15

Zhang, Ye, and Rajesh Rajamani. "High-voltage thin-film supercapacitor with nano-structured electrodes and novel architecture." TECHNOLOGY 04, no. 01 (March 2016): 55–59. http://dx.doi.org/10.1142/s2339547816200016.

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With increasing interest in wearable sensors and electronics, there is an increasing need for thin-film electrical energy storage devices such as flexible solid state supercapacitors. A thin solid state multi-cell supercapacitor of high operating voltage and high areal energy density that utilizes a graphene and carbon nanotube (CNT) composite for electrodes is presented. The supercapacitor can be fabricated with just wet coating and laser reduction processes which can be easily scaled to make larger devices.
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16

Vodyakho, O., M. Steurer, D. Neumayr, C. S. Edrington, G. Karady, and S. Bhattacharya. "Solid-state fault isolation devices: application to future power electronics-based distribution systems." IET Electric Power Applications 5, no. 6 (2011): 521. http://dx.doi.org/10.1049/iet-epa.2010.0258.

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17

Correa, L. M., and D. J. N. M. Chalhub. "COMPARISON BETWEEN SINGLE AND DOUBLE INTEGRAL TRANSFORMATION SOLUTIONS OF HEAT CONDUCTION IN SOLID-STATE ELECTRONICS." Revista de Engenharia Térmica 18, no. 2 (December 16, 2019): 62. http://dx.doi.org/10.5380/reterm.v18i2.70795.

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The design of modern electronic devices has been dealing with challenges on thermal control. In this work, it is proposed two different ways of modeling the temperature field in Solid State Electronics (SSE) using integral transforms, with several heat generations in the domain of the microchip and external convection. Two proposed approaches solve the heat conduction formulation on the SSE using the Classical Integral Transform Technique (CITT): One performing a single transformation (CITT-ST) and the other performing a double transformation (CITT-DT). Both methodologies are compared and achieved similar results. The simpler analytical solution by CITT-DT contrasts with a complex and cumbersome analytical manipulation of CITT-ST. The results show that CITT-ST is more efficient to obtain the solution, requiring a lower truncation order, for the problem of heat conduction in Solid State Electronics even though it has a more complex formulation.
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18

Yang, Bingchao, Xiangjun Li, Yong Cheng, Shuai Duan, Bo Zhao, Wencai Yi, Chao Wang, et al. "Liquid phase exfoliation of bismuth nanosheets for flexible all-solid-state supercapacitors with high energy density." Journal of Materials Chemistry C 8, no. 35 (2020): 12314–22. http://dx.doi.org/10.1039/d0tc03134h.

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19

McCreery, Richard, Adam Bergren, Amin Morteza-Najarian, Sayed Youssef Sayed, and Haijun Yan. "Electron transport in all-carbon molecular electronic devices." Faraday Discuss. 172 (2014): 9–25. http://dx.doi.org/10.1039/c4fd00172a.

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Carbon has always been an important electrode material for electrochemical applications, and the relatively recent development of carbon nanotubes and graphene as electrodes has significantly increased interest in the field. Carbon solids, both sp2 and sp3 hybridized, are unique in their combination of electronic conductivity and the ability to form strong bonds to a variety of other elements and molecules. The Faraday Discussion included broad concepts and applications of carbon materials in electrochemistry, including analysis, energy storage, materials science, and solid-state electronics. This introductory paper describes some of the special properties of carbon materials useful in electrochemistry, with particular illustrations in the realm of molecular electronics. The strong bond between sp2 conducting carbon and aromatic organic molecules enables not only strong electronic interactions across the interface between the two materials, but also provides sufficient stability for practical applications. The last section of the paper discusses several factors which affect the electron transfer kinetics at highly ordered pyrolytic graphite, some of which are currently controversial. These issues bear on the general question of how the structure and electronic properties of the carbon electrode material control its utility in electrochemistry and electron transport, which are the core principles of electrochemistry using carbon electrodes.
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20

Sun, Pengxiao, Weidong He, Hongcen Yang, Ruya Cao, Jiangmei Yin, Chenggang Wang, and Xijin Xu. "Hedgehog-inspired nanostructures for hydrogel-based all-solid-state hybrid supercapacitors with excellent flexibility and electrochemical performance." Nanoscale 10, no. 40 (2018): 19004–13. http://dx.doi.org/10.1039/c8nr04919j.

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21

Rinaldi, N. "Erratum to “Thermal analysis of solid-state devices and circuits: an analytical approach” [Solid-State Electronics 44 (10) 1789–1798]." Solid-State Electronics 45, no. 9 (September 2001): 1703. http://dx.doi.org/10.1016/s0038-1101(01)00051-x.

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22

Ahmed, Hind, and Ahmed Hashim. "Tuning the Optical, Electronic and Thermal Characteristics of Si3N4/PVA/PEO Solid State Structures for Electronics Devices." Physics and Chemistry of Solid State 23, no. 1 (February 13, 2022): 67–71. http://dx.doi.org/10.15330/pcss.23.1.67-71.

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The present paper deals with design of Si3N4 doped PVA/PEO new structures to use in different optic, electronic, photonic and electric approaches with distinguished characteristics included few cost, high corrosion resistance, lightweight and good optical, thermal and electronic properties. The Si3N4/PVA/PEO structures were optimized and effectively simulated with a B3LYP / LanL2DZ primer. The structure stability, optical, thermal and electronic properties of Si3N4/PVA/PEO were studied. The obtained results indicated to the PVA/PEO/Si3N4 structures may be used for various optoelectronics devices with low cost and high flexibly.
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23

Hashimoto, Norikazu, and Sinya Ohba. "The recent progress of broadcast engineering and image electronics. Materials and devices. Solid state device and LSI." Journal of the Institute of Television Engineers of Japan 42, no. 7 (1988): 718–22. http://dx.doi.org/10.3169/itej1978.42.718.

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24

Tiwari, Sanjay, and Jatinder V. Yakhmi. "Recent Advances in Luminescent Nanomaterials for Solid State Lighting Applications." Defect and Diffusion Forum 361 (January 2015): 15–68. http://dx.doi.org/10.4028/www.scientific.net/ddf.361.15.

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Nanotechnology has led to a profound paradigm shift after the developments in recent years and after being recognised as one of the most important areas of impending technology. Nanomaterials are the basis of newly emerging nanotechnologies for various applications in sensors, photonics, drug delivery, proteomics, biomolecular electronics, and homeland security. Luminescent nanomaterials have attracted great interest worldwide because of their unusual structural, optical and electronic properties as well as efforts to prepare miniaturised devices. By understanding and manipulating these properties, the performance of the resulting optical structure can be tailored for desired end-use applications. Luminescence nanoparticles have tremendous potential in revolutionizing many interesting applications in today’s emerging cutting-edge optical technology such as solid state lighting. Solid-state lighting (SSL) relies on the conversion of electricity to visible white light using solid materials. SSL using any of the materials (inorganic, organic, or hybrid) has the potential for unprecedented efficiencies. The development of novel mercury-free inexpensive nanomaterials, that convert longer wavelength UV to blue light eventually into white-light and are eco-friendly with improved luminous efficacy, energy-saving, long-lifetime, and low-power consumption characteristics, is discussed. In this review, we present a general description of EL related to nanomaterials as the emitter and outlines basic research requirements that could enable solid-state lighting to achieve its potential. Continuing progress in the synthesis and purification of SSL materials are beginning to enable separation of extrinsic and intrinsic phenomena and improve device performance. This review mainly focuses on the basic mechanism, classification, synthesis and characterization of luminescent nanomaterials. The review also covers recent advances in lanthanide-based nanomaterials and photoluminescent nanofibers formed by combining electrospun polymeric nanofibers and quantum dots (QDs) for lighting applications. In spite of the remarkable scientific progress in preparation processes and applications of nanomaterials, they are still not widely used by the industry. Finally, we conclude with a look at the future challenges and prospects of the development of electroluminescence (EL) devices for lighting.Contents of Paper
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25

Klunnikova, Y. V., and S. P. Malyukov. "Physical and Technological Fundamentals of Sapphire Substrates Production for Devices of Solid-state Electronics." KnE Engineering 3, no. 4 (May 7, 2018): 179. http://dx.doi.org/10.18502/keg.v3i4.2240.

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26

Hashimoto, Norikazu. "The recent progress of broadcast engineering and image electronics. 9. Materials and devices. 9-1. Solid state devices." Journal of the Institute of Television Engineers of Japan 40, no. 7 (1986): 663–65. http://dx.doi.org/10.3169/itej1978.40.663.

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27

Yin, Chengyao, Xinhua Liu, Junjie Wei, Rui Tan, Jie Zhou, Mengzheng Ouyang, Huizhi Wang, et al. "“All-in-Gel” design for supercapacitors towards solid-state energy devices with thermal and mechanical compliance." Journal of Materials Chemistry A 7, no. 15 (2019): 8826–31. http://dx.doi.org/10.1039/c9ta01155b.

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“All-in-gel” supercapacitor is designed via ionogel composite electrolyte and Bucky gel electrodes. These flexible, conductive and shape-conformable gels represent a step change in the design of safe energy storage devices for wearable electronics, in particular those facing the increased demands of hazardous operational environments.
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28

White, Curtis, Tristan Skinner, Kevin Santiago, Sangram K. Pradhan, and Messaoud Bahoura. "Large Expansion of Operating Voltage Window in Polymer Based Flexible Solid State Supercapacitor." MRS Advances 3, no. 23 (2018): 1291–300. http://dx.doi.org/10.1557/adv.2018.158.

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ABSTRACTSpecific demand of lightweight and high efficient flexible energy unit is increased day by day for its integration into bendable electronics devices. Super-capacitor is one of the promising power unit to meet the current requirement. Flexible metal oxide and polypyrrole based flexible electrode materials are prepared using electrodeposition. The calculated specific capacitances of the devices shows 0.5 mill farad per gram. The super-capacitor is ultra-flexible, stable with operational voltage window expands from 0.8 to 2.5 V which can help to reduce the number of super-capacitor in series connection to obtain the same output. In this study, a conductive polymer can be coupled with MnO2 to improve capacitance and conductivity of a hybrid structure based on MnO2.
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29

Punzi, A., M. A. M. Capozzi, V. Fino, C. Carlucci, M. Suriano, E. Mesto, E. Schingaro, et al. "Croconaines as molecular materials for organic electronics: synthesis, solid state structure and use in transistor devices." Journal of Materials Chemistry C 4, no. 15 (2016): 3138–42. http://dx.doi.org/10.1039/c6tc00264a.

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30

Kulatunga, Piumi, Nastaran Yousefi, and Simon Rondeau-Gagné. "Polyethylene and Semiconducting Polymer Blends for the Fabrication of Organic Field-Effect Transistors: Balancing Charge Transport and Stretchability." Chemosensors 10, no. 6 (May 24, 2022): 201. http://dx.doi.org/10.3390/chemosensors10060201.

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Polyethylene is amongst the most used polymers, finding a plethora of applications in our lives owing to its high impact resistance, non-corrosive nature, light weight, cost effectiveness, and easy processing into various shapes from different sizes. Despite these outstanding features, the commodity polymer has been underexplored in the field of organic electronics. This work focuses on the development of new polymer blends based on a low molecular weight linear polyethylene (LPE) derivative with a high-performance diketopyrrolopyrrole-based semiconducting polymer. Physical blending of the polyethylene with semiconducting polymers was performed at ratios varying from 0 to 75 wt.%, and the resulting blends were carefully characterized to reveal their electronic and solid-state properties. The new polymer blends were also characterized to reveal the influence of polyethylene on the mechanical robustness and stretchability of the semiconducting polymer. Overall, the introduction of LPE was shown to have little to no effect on the solid-state properties of the materials, despite some influence on solid-state morphology through phase separation. Organic field-effect transistors prepared from the new blends showed good device characteristics, even at higher ratios of polyethylene, with an average mobility of 0.151 cm2 V−1 s−1 at a 25 wt.% blend ratio. The addition of polyethylene was shown to have a plasticizing effect on the semiconducting polymers, helping to reduce crack width upon strain and contributing to devices accommodating more strain without suffering from decreased performance. The new blends presented in this work provide a novel platform from which to access more mechanically robust organic electronics and show promising features for the utilization of polyethylene for the solution processing of advanced semiconducting materials toward novel soft electronics and sensors.
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31

Qiu, Wenda, Hongbing Xiao, Wenting He, Yu Li, and Yexiang Tong. "A flexible rechargeable quasi-solid-state Ni–Fe battery based on surface engineering exhibits high energy and long durability." Inorganic Chemistry Frontiers 5, no. 8 (2018): 1805–15. http://dx.doi.org/10.1039/c8qi00359a.

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With the rapid development of portable and wearable electronics, energy storage devices featuring high energy and power densities, long-cycle lifetime, environment friendliness, safe operation, lightweight, ultrathin thickness and flexibilityl have become increasingly important.
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32

Aikens, R., and G. Sims. "Survey of electronic imaging past, present, and future." Proceedings, annual meeting, Electron Microscopy Society of America 44 (August 1986): 82–83. http://dx.doi.org/10.1017/s0424820100142098.

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Анотація:
Since its inception in the 1920's, electronic imaging has evolved from placing a photocell behind a rotating disk with a spiral pattern of holes to solid-state sensors backed by powerful image-processing computers. In the early years, developments in electronics imaging were driven by the possibility of broadcasting images over the airwaves. A number of scientists attempted to adapt devices for television to other forms of electronic imaging. However, success in applying televison pickup tubes to high-performance imaging was minimal because of the high cost, low performance, and scarcity of large-scale computers.
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33

Guan, Xin, Lujun Pan, and Zeng Fan. "Flexible, Transparent and Highly Conductive Polymer Film Electrodes for All-Solid-State Transparent Supercapacitor Applications." Membranes 11, no. 10 (October 16, 2021): 788. http://dx.doi.org/10.3390/membranes11100788.

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Lightweight energy storage devices with high mechanical flexibility, superior electrochemical properties and good optical transparency are highly desired for next-generation smart wearable electronics. The development of high-performance flexible and transparent electrodes for supercapacitor applications is thus attracting great attention. In this work, we successfully developed flexible, transparent and highly conductive film electrodes based on a conducting polymer, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The PEDOT:PSS film electrodes were prepared via a simple spin-coating approach followed by a post-treatment with a salt solution. After treatment, the film electrodes achieved a high areal specific capacitance (3.92 mF/cm2 at 1 mA/cm2) and long cycling lifetime (capacitance retention >90% after 3000 cycles) with high transmittance (>60% at 550 nm). Owing to their good optoelectronic and electrochemical properties, the as-assembled all-solid-state device for which the PEDOT:PSS film electrodes were utilized as both the active electrode materials and current collectors also exhibited superior energy storage performance over other PEDOT-based flexible and transparent symmetric supercapacitors in the literature. This work provides an effective approach for producing high-performance, flexible and transparent polymer electrodes for supercapacitor applications. The as-obtained polymer film electrodes can also be highly promising for future flexible transparent portable electronics.
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34

Sheats, James R. "Manufacturing and commercialization issues in organic electronics." Journal of Materials Research 19, no. 7 (July 2004): 1974–89. http://dx.doi.org/10.1557/jmr.2004.0275.

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Techniques for manufacturing organic electronic devices [organic light-emitting diodes (OLEDs), photovoltaic cells, transistors, and solid-state memory] are reviewed and analyzed with respect to cost and market fitness in comparison to competitive approaches based on silicon electronics. The conclusions are (i) OLED displays will be successful using infrastructure largely borrowed from liquid crystal displays, because they provide fundamental customer value not dependent on lower cost; (ii) OLEDs for general lighting and organic–inorganic hybrid photovoltaic cells currently confront substantial barriers in cost and efficiency, but solutions appear feasible and would lead to very large volume businesses; (iii) organic crossbar memories are promising, but require innovations in driver architecture and interconnection; and (iv) organic transistors have not yet found a viable major market, but have great promise for highly customized, small-volume product runs using digital patterning techniques.
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35

Zhang, Xinan, Binghao Wang, Lizhen Huang, Wei Huang, Zhi Wang, Weigang Zhu, Yao Chen, YanLi Mao, Antonio Facchetti, and Tobin J. Marks. "Breath figure–derived porous semiconducting films for organic electronics." Science Advances 6, no. 13 (March 2020): eaaz1042. http://dx.doi.org/10.1126/sciadv.aaz1042.

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Анотація:
Porous semiconductor film morphologies facilitate fluid diffusion and mass transport into the charge-carrying layers of diverse electronic devices. Here, we report the nature-inspired fabrication of several porous organic semiconductor-insulator blend films [semiconductor: P3HT (p-type polymer), C8BTBT (p-type small-molecule), and N2200 (n-type polymer); insulator: PS] by a breath figure patterning method and their broad and general applicability in organic thin-film transistors (OTFTs), gas sensors, organic electrochemical transistors (OECTs), and chemically doped conducting films. Detailed morphological analysis of these films demonstrates formation of textured layers with uniform nanopores reaching the bottom substrate with an unchanged solid-state packing structure. Device data gathered with both porous and dense control semiconductor films demonstrate that the former films are efficient TFT semiconductors but with added advantage of enhanced sensitivity to gases (e.g., 48.2%/ppm for NO2 using P3HT/PS), faster switching speeds (4.7 s for P3HT/PS OECTs), and more efficient molecular doping (conductivity, 0.13 S/m for N2200/PS).
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36

Yin, Zongyou, Moshe Tordjman, Youngtack Lee, Alon Vardi, Rafi Kalish, and Jesús A. del Alamo. "Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond." Science Advances 4, no. 9 (September 2018): eaau0480. http://dx.doi.org/10.1126/sciadv.aau0480.

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Анотація:
High electron affinity transition-metal oxides (TMOs) have gained a central role in two-dimensional (2D) electronics by enabling unprecedented surface charge doping efficiency in numerous exotic 2D solid-state semiconductors. Among them, diamond-based 2D electronics are entering a new era by using TMOs as surface acceptors instead of previous molecular-like unstable acceptors. Similarly, surface-doped diamond with TMOs has recently yielded record sheet hole concentrations (2 × 1014 cm−2) and launched the quest for its implementation in microelectronic devices. Regrettably, field-effect transistor operation based on this surface doping has been so far disappointing due to fundamental material obstacles such as (i) carrier scattering induced by nonhomogeneous morphology of TMO surface acceptor layer, (ii) stoichiometry changes caused by typical transistor fabrication process, and (iii) carrier transport loss due to electronic band energy misalignment. This work proposes and demonstrates a general strategy that synergistically surmounts these three barriers by developing an atomic layer deposition of a hydrogenated MoO3 layer as a novel efficient surface charge acceptor for transistors. It shows high surface uniformity, enhanced immunity to harsh fabrication conditions, and benefits from tunable electronic gap states for improving carrier transfer at interfaces. These breakthroughs permit crucial integration of TMO surface doping into transistor fabrication flows and allow outperforming electronic devices to be reached.
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37

Guan, Xipeng, Debin Kong, Qin Huang, Lin Cao, Peng Zhang, Huaijun Lin, Zhidan Lin, and Hong Yuan. "In Situ Growth of a High-Performance All-Solid-State Electrode for Flexible Supercapacitors Based on a PANI/CNT/EVA Composite." Polymers 11, no. 1 (January 21, 2019): 178. http://dx.doi.org/10.3390/polym11010178.

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Анотація:
For the development of light, flexible, and wearable electronic devices, it is crucial to develop energy storage components combining high capacity and flexibility. Herein, an all-solid-state supercapacitor is prepared through an in situ growth method. The electrode contains polyaniline deposited on a carbon nanotube and a poly (ethylene-co-vinyl acetate) film. The hybrid electrode exhibits excellent mechanical and electrochemical performance. The optimized few-layer polyaniline wrapping layer provides a conductive network that effectively enhances the cycling stability, as 66.4% of the starting capacitance is maintained after 3000 charge/discharge cycles. Furthermore, the polyaniline (PANI)-50 displays the highest areal energy density of 83.6 mWh·cm−2, with an areal power density of 1000 mW·cm−2, and a high areal capacity of 620 mF cm−2. The assembled device delivers a high areal capacity (192.3 mF·cm−2) at the current density of 0.1 mA·cm−2, a high areal energy (26.7 mWh·cm−2) at the power density of 100 mW·cm−2, and shows no significant decrease in the performance with a bending angle of 180°. This unique flexible supercapacitor thus exhibits great potential for wearable electronics.
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38

Li, Jialun, Xueyu Zhang, Xuesong Li, Lianfeng Duan, Xijia Yang, Liying Wang, and Wei Lü. "Highly transparent and flexible graphitic C3N4 nanowire/PVA/PEDOT:PSS supercapacitors for transparent electronic devices." Functional Materials Letters 13, no. 02 (January 15, 2020): 2051006. http://dx.doi.org/10.1142/s1793604720510066.

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Анотація:
To achieve reliable flexibility and acceptable transparency for integrated electronics, the power supply sources of these devices have to meet the requirement of flexibility and transparency. Herein, we developed a facile and non-toxic way to manufacture all-solid-state supercapacitors with high capacitive performance, transparency and flexibility. The as-prepared g-C3N4 nanowires are distributed in Polyvinyl Alcohol (PVA) and Poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) solution, transparent film could be formed by vacuum filtration. The g-C3N4 nanowires provide pseudocapacitance and PVA and PEDOT:PSS matrix provides bendable and stretchable ability. The g-C3N4/PVA electrode achieves a specific areal capacitance of 3.51[Formula: see text]mF[Formula: see text]cm[Formula: see text] with transparency of 85%, and that of g-C3N4/PVA/PEDOT:PSS is 5.32[Formula: see text]mF[Formula: see text]cm[Formula: see text] with transparency of 72%. The facile process provides a reasonable architecture for the preparation of a variety of flexible, transparent and wearable electronic devices. The flexible and transparent devices show an instant response to the finger bending with the capacitance change of more than 25%, which provides the possibility for fabricating smart flexible device to monitor human health and motion detection.
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39

Malik, Faraz Kaiser, Tariq Talha, and Faisal Ahmed. "A Parametric Study of the Effects of Critical Design Parameters on the Performance of Nanoscale Silicon Devices." Nanomaterials 10, no. 10 (October 9, 2020): 1987. http://dx.doi.org/10.3390/nano10101987.

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Анотація:
The current electronics industry has used the aggressive miniaturization of solid-state devices to meet future technological demands. The downscaling of characteristic device dimensions into the sub-10 nm regime causes them to fall below the electron–phonon scattering length, thereby resulting in a transition from quasi-ballistic to ballistic carrier transport. In this study, a well-established Monte Carlo model is employed to systematically investigate the effects of various parameters such as applied voltage, channel length, electrode lengths, electrode doping and initial temperature on the performance of nanoscale silicon devices. Interestingly, from the obtained results, the short channel devices are found to exhibit smaller heat generation, with a 2 nm channel device having roughly two-thirds the heat generation rate observed in an 8 nm channel device, which is attributed to reduced carrier scattering in the ballistic transport regime. Furthermore, the drain contacts of the devices are identified as critical design areas to ensure safe and efficient performance. The heat generation rate is observed to increase linearly with an increase in the applied electric field strength but does not change significantly with an increase in the initial temperature, despite a marked reduction in the electric current flowing through the device.
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40

Yang, Gene, Corey Abraham, Yuxi Ma, Myoungseok Lee, Evan Helfrick, Dahyun Oh, and Dongkyu Lee. "Advances in Materials Design for All-Solid-state Batteries: From Bulk to Thin Films." Applied Sciences 10, no. 14 (July 9, 2020): 4727. http://dx.doi.org/10.3390/app10144727.

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Анотація:
All-solid-state batteries (SSBs) are one of the most fascinating next-generation energy storage systems that can provide improved energy density and safety for a wide range of applications from portable electronics to electric vehicles. The development of SSBs was accelerated by the discovery of new materials and the design of nanostructures. In particular, advances in the growth of thin-film battery materials facilitated the development of all solid-state thin-film batteries (SSTFBs)—expanding their applications to microelectronics such as flexible devices and implantable medical devices. However, critical challenges still remain, such as low ionic conductivity of solid electrolytes, interfacial instability and difficulty in controlling thin-film growth. In this review, we discuss the evolution of electrode and electrolyte materials for lithium-based batteries and their adoption in SSBs and SSTFBs. We highlight novel design strategies of bulk and thin-film materials to solve the issues in lithium-based batteries. We also focus on the important advances in thin-film electrodes, electrolytes and interfacial layers with the aim of providing insight into the future design of batteries. Furthermore, various thin-film fabrication techniques are also covered in this review.
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41

Brinkman, W. F. "Electron Microscopy and the Electronics Industry: Partners in Development." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 1 (August 12, 1990): 12–13. http://dx.doi.org/10.1017/s0424820100178811.

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Анотація:
Since the invention of the transistor and the birth of the solid-state electronics industry, electron microscopy has been an integral part of the boom in the science and technology of semiconductors. The relationship has been symbiotic: the technique of microscopy has probably gained almost as much as the electronics industry from innovations. Historically, semiconductor research has always come down to a question of the growth of perfect materials with perfect interfaces, and microscopic analysis below the optical level has been essential to improvements. When applications for the semiconductors germanium and silicon were discovered in solid-state devices, its became necessary to grow high-quality single crystals free of defects. A lot of work at Bell Labs and other institutions was directed at understanding the behavior of dislocations in crystals. Bill Schockley, a co-inventor of the transistor, is well-known for his contributions to dislocation theory, particularly dislocation dissociation in semiconductors. Bob Heidenreich, from Bell Labs, contributed much to the early stages of microscopy of defects and dislocations. The need for dislocation-free material generated extensive efforts around the world which led to the growth of high-purity single-crystal silicon in the 1960’s. Silicon is now the highest quality and purest material available, and also the cheapest in single-crystal form.
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42

Ibrahim Zamkoye, Issoufou, Houda El Gbouri, Remi Antony, Bernard Ratier, Johann Bouclé, Laurent Galmiche, Thierry Trigaud, and Pierre Audebert. "Characterization and Electronic Properties of Heptazine Layers: Towards Promising Interfacial Materials for Organic Optoelectronics." Materials 13, no. 17 (August 29, 2020): 3826. http://dx.doi.org/10.3390/ma13173826.

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Анотація:
For the first time, an original compound belonging to the heptazine family has been deposited in the form of thin layers, both by thermal evaporation under vacuum and spin-coating techniques. In both cases, smooth and homogeneous layers have been obtained, and their properties evaluated for eventual applications in the field of organic electronics. The layers have been fully characterized by several concordant techniques, namely UV-visible spectroscopy, steady-state and transient fluorescence in the solid-state, as well as topographic and conductive atomic force microscopy (AFM) used in Kelvin probe force mode (KPFM). Consequently, the afferent energy levels, including Fermi level, have been determined, and show that these new heptazines are promising materials for tailoring the electronic properties of interfaces associated with printed electronic devices. A test experiment showing an improved electron transfer rate from a tris-(8-hydroxyquinoline) aluminum (Alq3) photo-active layer in presence of a heptazine interlayer is finally presented.
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43

Baiburin, V. B., A. S. Rozov, N. Yu Khorovodova, A. S. Ershov, and A. A. Nikiforov. "A new approach to the development of perspective compact frequency multipliers of the subterahertz and terahertz bands for on-board electronic equipment." Radioengineering 8 (2021): 111–21. http://dx.doi.org/10.18127/j00338486-202108-12.

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Анотація:
Currently, the increasing interest of researchers is attracted by the theoretical and practical problems of mastering the sub-terahertz and terahertz frequency range. Electronic devices operating in these ranges find effective applications in various fields of science and technology: aerospace equipment, security systems, spectroscopy, medicine, biology and many others. The purpose of this work is to focus on a frequency multiplication device that allows using basic sources of relatively low frequency generation to enter the terahertz frequency range. The results of recent years obtained both on the basis of solid-state effects and with the help of vacuum electronics, in particular, magnetron-type devices, which are characterized by compactness, high resistance to radiation loads, mechanical influences, which is important for on-board equipment, are considered. It is known that at high frequencies, vacuum devices require super-precision manufacturing of decelerating systems. This is essentially the main difficulty. The article proposes a new approach based on the hypothesis of P.L. Kapitsa, which allows to significantly simplify the anode structure of a magnetron multiplier with an acceptable level of output parameters. The achievements of recent years in the field of creating sub-terahertz and terahertz frequency multipliers, mainly for on-board equipment of mobile platforms, taking into account the requirements of aerospace systems, first of all, are noted.
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44

Campbell, Josh, and Graeme Day. "Structure prediction of N-heteroacenes as potential organic semiconductors." Acta Crystallographica Section A Foundations and Advances 70, a1 (August 5, 2014): C1621. http://dx.doi.org/10.1107/s2053273314083788.

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Анотація:
Organic electronics offer exciting new alternatives to traditional inorganic devices based on advantages such as lower cost, ease of manufacture and flexibility. Small molecule semiconductors such as pentacene and rubrene are the focus of intense research due to performance approaching that of inorganic semiconductors. Charge transfer in polyaromatic hydrocarbons (PAHs) relies on the degree of π-conjugation and overlap of the π-systems of neighbouring molecules in the solid state. Small changes in the intermolecular interactions can lead to important changes in crystal packing and electronic properties. Thus, functionalization of PAHs is often used to improve their packing in the solid state. The addition of electronegative atoms into the ring system of pentacene has been proposed for improving stability while retaining attractive properties. [1] N-heteroacenes result from the substitution of nitrogen into the arene ring structure. The resulting potential for weak hydrogen bonding could direct coplanar molecular arrangements, sheet formation and favourable π-overlap for charge transport. Theoretical studies [2] have been carried out showing promising properties at the molecular level. As of yet no analysis of the solid state of these molecules has been performed to investigate how this substitution affects the packing and electronic properties. Here, we present the results of crystal structure prediction studies and calculation of charge transport properties aimed at understanding the influence of nitrogen substitution on the crystal packing of N-heteropentacenes and their performance as semiconducting materials.
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45

Sung, Yu-Shun, and Lu-Yin Lin. "Systematic Design of Polypyrrole/Carbon Fiber Electrodes for Efficient Flexible Fiber-Type Solid-State Supercapacitors." Nanomaterials 10, no. 2 (January 30, 2020): 248. http://dx.doi.org/10.3390/nano10020248.

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Анотація:
Fiber-type supercapacitors (FSC) have attracted much attention as efficient energy storage devices for soft electronics. This study proposes the synthesis of polypyrrole (PPy) on carbon fiber (CF) using electropolymerization as the energy storage electrode for FSC. Effects of the electrolyte, applied current, and time of electropolymerization for synthesizing PPy on CF are investigated. The configuration of the electrochemical system is also studied to better understand the electropolymerization of PPy. The highest specific capacitance (CM) of 308.2 F/g are obtained for the PPy electrode prepared using 0.5 M pyrrole and 0.3 M NaClO4 as the electrolyte at 40 mA for 20 min. The FSC assembled with PPy electrodes and the polyvinyl alcohol/H3PO4 gel electrolyte shows a CM value of 30 F/g and the energy density of 5.87 Wh/kg at the power density of 60.0 W/kg. Excellent cycling stability with CM retention of 70% and Coulombic efficiency higher than 98% in 3000 times charge/discharge process, and the good bending capability with CM retention of 153% and 148%, respectively, under the bending angle of 180° and the bending times of 600 are achieved. This work gives deeper understanding of electropolymerization and provides recipes for fabricating an efficient PPy electrode for soft energy storage devices.
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46

Seymour, Ian, Tarun Narayan, Niamh Creedon, Kathleen Kennedy, Aidan Murphy, Riona Sayers, Emer Kennedy, Ivan O’Connell, James F. Rohan, and Alan O’Riordan. "Advanced Solid State Nano-Electrochemical Sensors and System for Agri 4.0 Applications." Sensors 21, no. 9 (May 1, 2021): 3149. http://dx.doi.org/10.3390/s21093149.

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Анотація:
Global food production needs to increase in order to meet the demands of an ever growing global population. As resources are finite, the most feasible way to meet this demand is to minimize losses and improve efficiency. Regular monitoring of factors like animal health, soil and water quality for example, can ensure that the resources are being used to their maximum efficiency. Existing monitoring techniques however have limitations, such as portability, turnaround time and requirement for additional reagents. In this work, we explore the use of micro- and nano-scale electrode devices, for the development of an electrochemical sensing platform to digitalize a wide range of applications within the agri-food sector. With this platform, we demonstrate the direct electrochemical detection of pesticides, specifically clothianidin and imidacloprid, with detection limits of 0.22 ng/mL and 2.14 ng/mL respectively, and nitrates with a detection limit of 0.2 µM. In addition, interdigitated electrode structures also enable an in-situ pH control technique to mitigate pH as an interference and modify analyte response. This technique is applied to the analysis of monochloramine, a common water disinfectant. Concerning biosensing, the sensors are modified with bio-molecular probes for the detection of both bovine viral diarrhea virus species and antibodies, over a range of 1 ng/mL to 10 µg/mL. Finally, a portable analogue front end electronic reader is developed to allow portable sensing, with control and readout undertaken using a smart phone application. Finally, the sensor chip platform is integrated with these electronics to provide a fully functional end-to-end smart sensor system compatible with emerging Agri-Food digital decision support tools.
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47

Pazhamalai, Parthiban, Vimal Kumar Mariappan, Surjit Sahoo, Woo Young Kim, Young Sun Mok, and Sang-Jae Kim. "Free-Standing PVDF/Reduced Graphene Oxide Film for All-Solid-State Flexible Supercapacitors towards Self-Powered Systems." Micromachines 11, no. 2 (February 14, 2020): 198. http://dx.doi.org/10.3390/mi11020198.

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Анотація:
The development of polymer-based devices has attracted much attention due to their miniaturization, flexibility, lightweight and sustainable power sources with high efficiency in the field of wearable/portable electronics, and energy system. In this work, we proposed a polyvinylidene fluoride (PVDF)-based composite matrix for both energy harvesting and energy storage applications. The physicochemical characterizations, such as X-ray diffraction, laser Raman, and field-emission scanning electron microscopy (FE-SEM) analyses, were performed for the electrospun PVDF/sodium niobate and PVDF/reduced graphene oxide composite film. The electrospun PVDF/sodium niobate nanofibrous mat has been utilized for the energy harvester which shows an open circuit voltage of 40 V (peak to peak) at an applied compressive force of 40 N. The PVDF/reduced graphene oxide composite film acts as the electrode for the symmetric supercapacitor (SSC) device fabrication and investigated for their supercapacitive properties. Finally, the self-charging system has been assembled using PVDF/sodium niobate (energy harvester), and PVDF/reduced graphene oxide SSC (energy storage) and the self-charging capability is investigated. The proposed self-charging system can create a pathway for the all-polymer based composite high-performance self-charging system.
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48

Venturi, Margherita, Vincenzo Balzani, Roberto Ballardini, Alberto Credi, and M. Teresa Gandolfi. "Towards molecular photochemionics." International Journal of Photoenergy 6, no. 1 (2004): 1–10. http://dx.doi.org/10.1155/s1110662x04000017.

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Анотація:
In the last few years there has been a great interest in developing electronics at a molecular level (molecular electronics), e.g. to construct miniaturized electric circuits that would be much smaller than the corresponding micron-scale digital logic circuits fabricated on conventional solid-state semiconductor chips. An alternative possibility to the use of electron fluxes as a means for information processing (electronics) is that of using optical beams (photonics), but up until now scarce attention has been devoted to the possibility of developing photonics at the molecular level. In this paper we review some recent achievements in the design and construction of molecular-level systems that are capable of transferring, switching, collecting, storing, and elaborating light signals. The combination of molecular photonics with chemionics can lead to a wealth of molecular-level devices capable of information processing.
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49

Flik, M. I. "Heat Transfer in Superconducting Films." Applied Mechanics Reviews 44, no. 3 (March 1, 1991): 93–108. http://dx.doi.org/10.1115/1.3119498.

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Анотація:
Thin films that are superconducting above liquid-nitrogen temperature possess promising applications in electronics and sensor technology. The design, the characterization and the processing of devices based on the high-temperature superconductors pose new fundamental heat transfer problems. This article reviews thermal conduction, thermal radiation and thermal stability phenomena in superconducting films. The understanding of these thermal phenomena requires solid-state physics and materials science, in addition to heat transfer and thermodynamics. Future research opportunities are pointed out for thermal problems in superconducting films.
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50

Liu, Qiulin, Guodong Li, Hangtian Zhu, and Huaizhou Zhao. "Micro thermoelectric devices: From principles to innovative applications." Chinese Physics B 31, no. 4 (April 1, 2022): 047204. http://dx.doi.org/10.1088/1674-1056/ac5609.

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Анотація:
Thermoelectric devices (TEDs), including thermoelectric generators (TEGs) and thermoelectric coolers (TECs) based on the Seebeck and Peltier effects, respectively, are capable of converting heat directly into electricity and vice versa. Tough suffering from low energy conversion efficiency and relatively high capital cost, TEDs have found niche applications, such as the remote power source for spacecraft, solid-state refrigerators, waste heat recycling, and so on. In particular, on-chip integrable micro thermoelectric devices (μ-TEDs), which can realize local thermal management, on-site temperature sensing, and energy harvesting under minor temperature gradient, could play an important role in biological sensing and cell cultivation, self-powered Internet of Things (IoT), and wearable electronics. In this review, starting from the basic principles of thermoelectric devices, we summarize the most critical parameters for μ-TEDs, design guidelines, and most recent advances in the fabrication process. In addition, some innovative applications of μ-TEDs, such as in combination with microfluidics and photonics, are demonstrated in detail.
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