Дисертації з теми "Solar cell applications"
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Jons, Mattias. "Doped 3C-SiC Towards Solar Cell Applications." Thesis, Linköpings universitet, Halvledarmaterial, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-148595.
Повний текст джерелаFyhn, Anna Maren Andersen. "Electrodeposition of Metal Oxides for Solar Cell Applications." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for fysikk, 2012. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-16361.
Повний текст джерелаAlam, Firoz. "Fabrication and characterization of surfactant free metal chalcogenides (Pbs and SnS) for photovoltaic applications." Thesis, IIT Delhi, 2016. http://localhost:8080/xmlui/handle/12345678/7043.
Повний текст джерелаEspindola, Rodriguez Moises. "Kesterite Deposited by Spray Pyrolysis for Solar Cell Applications." Doctoral thesis, Universitat de Barcelona, 2015. http://hdl.handle.net/10803/346633.
Повний текст джерелаEn esta tesis se demuestra el uso de un sistema de spray pyrolysis utilizado para sintetizar kesterita de azufre puro (CZTS) un material que representa un reto tecnológico y científico en el campo de las celdas solares de películas delgadas. La síntesis de este material es llevada a cabo en un sistema de spray en atmosfera controlada en el marco de los parámetros del sistema y de la solución; evitando el uso de reactivos altamente peligrosos utilizando en su caso agua y alcoholes. Se demuestra la síntesis de materiales del tipo CZTSSe después de un proceso de selenización; las celdas solares resultantes muestran las posibilidades del material y del sistema.
Mavundla, Sipho Enos. "One-Dimensional nanostructured polymeric materials for solar cell applications." Thesis, University of the Western Cape, 2010. http://etd.uwc.ac.za/index.php?module=etd&action=viewtitle&id=gen8Srv25Nme4_1088_1305888911.
Повний текст джерелаThis work entails the preparation of various polyanilines with different morphologies and their application in photovoltaic solar cells. Zinc oxide (ZnO) with one-dimensional and flower-like morphology was also prepared by microwave irradiation and used as electron acceptors in photovoltaics devices. The morphological, structural, spectroscopic and electrochemical characteristics of these materials were determined by scanning electron microscopy (SEM), X-Ray diffraction (XRD), Raman, Fourier-transformed infrared spectroscopy (FTIR), ultraviolet and visible spectroscopy (UV-Vis), photoluminescence(PL), thermal gravimetric analysis (TGA) and cyclic voltammetry (CV) experiments. Devices fabricated from these materials were characterized under simulated AM 1.5 at 800 mW.
Koulentianos, Dimitrios. "Quantum confinement effect in materials for solar cell applications." Thesis, Uppsala universitet, Materialteori, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-237189.
Повний текст джерелаShang, Xiangjun. "Study of quantum dots on solar energy applications." Doctoral thesis, KTH, Teoretisk kemi och biologi, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-94021.
Повний текст джерелаQC 20120507
Henriksen, Lisa Grav. "Pump-probe experiments of multicrystalline silicon for solar cell applications." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for fysikk, 2012. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-19207.
Повний текст джерелаEkstrøm, Kai Erik. "Growth and Characterization of Silicon Nanowires for Solar Cell Applications." Thesis, Norges teknisk-naturvitenskapelige universitet, Institutt for kjemi, 2011. http://urn.kb.se/resolve?urn=urn:nbn:no:ntnu:diva-18337.
Повний текст джерелаBendapudi, Sree Satya Kanth. "Novel Film Formation Pathways for Cu2ZnSnSe4 for Solar Cell Applications." Scholar Commons, 2011. http://scholarcommons.usf.edu/etd/3005.
Повний текст джерелаStranks, Samuel David. "Investigating carbon nanotube - polymer blends for organic solar cell applications." Thesis, University of Oxford, 2011. http://ora.ox.ac.uk/objects/uuid:3a65d509-1610-4517-b10d-c90d832134c3.
Повний текст джерелаVyas, Niladri. "Development of novel coatings for dye-sensitized solar cell applications." Thesis, Swansea University, 2015. https://cronfa.swan.ac.uk/Record/cronfa42397.
Повний текст джерелаZhang, Rong. "Zinc Oxide Thin Films for Dye-Sensitized Solar Cell Applications." Miami University / OhioLINK, 2007. http://rave.ohiolink.edu/etdc/view?acc_num=miami1186016777.
Повний текст джерелаAl-Taay, Hanaa. "Growth and characterization of silicon nanowires for solar cell applications." Thesis, Al-Taay, Hanaa (2014) Growth and characterization of silicon nanowires for solar cell applications. PhD thesis, Murdoch University, 2014. https://researchrepository.murdoch.edu.au/id/eprint/23299/.
Повний текст джерелаKumar, R. Anil. "Studies on Solar Cell AC Parameters (Instrumentation, Measurements and Applications)." Thesis, Indian Institute of Science, 2004. https://etd.iisc.ac.in/handle/2005/116.
Повний текст джерелаKumar, R. Anil. "Studies on Solar Cell AC Parameters (Instrumentation, Measurements and Applications)." Thesis, Indian Institute of Science, 2004. http://hdl.handle.net/2005/116.
Повний текст джерелаVakkalanka, Sridevi A. "Development of window layer for high efficiency high bandgap cadmium selenide solar cell for 4-terminal tandem solar cell applications." [Tampa, Fla] : University of South Florida, 2006. http://purl.fcla.edu/usf/dc/et/SFE0001761.
Повний текст джерелаÁlvarez, García Jacobo. "Characterisation of CuInS2 Films for Solar Cell Applications by Raman Spectroscopy." Doctoral thesis, Universitat de Barcelona, 2002. http://hdl.handle.net/10803/1505.
Повний текст джерелаOn the other hand, polycrystalline films grown at different conditions were prepared in order to investigate the influence of the growth parameters upon the structural properties of the films. Cu excess conditions and growth temperatures above 470ºC lead to good quality absorbers. Moreover, the Cu excess segregates at the surface of the film as CuS, and can be easily removed by a chemical treatment in KCN. The good quality of the CuInS2 films obtained by this recipe and the wide window process (Cu/In between 1.2 and 1.8) justify this additional step for the preparation of CuInS2 films. This constitutes an important advantage with respect to the processing of CuInSe2 absorbers, for which the effect of the stoichiometric deviations is critical. The efficiency of the cells fabricated from absorbers grown under these conditions is in the range of 12%. On the contrary, films grown under Cu poor stoichiometry and/or lower temperatures present very bad crystalline quality, and lead to photovoltaic devices with very low efficiencies. It was proved that these conditions favour the formation of Cu-Au ordered domains in the films, thus deteriorating the crystalline quality of the chalcopyrite phase. Furthermore, Cu-poor conditions favour the formation of precipitates of CuIn5S8 at the bulk of the films.
Baseline sequentially processed films are obtained by the sulphurisation reaction of the metallic precursors, which are previously sputtered onto the Mo-coated glass substrate. Cu excess conditions and substrate temperatures around 500ºC are selected for the growth of these baseline absorbers. The crystalline quality of these films is similar to that of the coevaporated films grown under Cu excess conditions. Furthermore, the effect of the incorporation of Ga in the metallic precursors was also studied. The aim of introducing Ga is to increase the VOC of the final device. However, the sulphurisation of the Ga-containing precursors leads to films presenting a bilayer structure, characterised by the existence of an In rich Cu(In,Ga)S2 quaternary at the surface region of the sample, and a Ga rich Cu(In,Ga)S2 quaternary at the back region of the film. Although the homogeneity of the films could be improved by using higher sulphurisation temperatures and a Rapid Thermal Process in H2S, it was not possible to avoid the accumulation of Ga close to back region of the films. The explanation for the structure of these films was provided by the analysis of samples quenched at different stages of the sulphurisation reaction, which allow establishing the fundamental steps of the sulphurisation reaction of the metallic layers.
Karaman, Mehmet. "Characterization And Fabrication Of Silicon Thin Films For Solar Cell Applications." Master's thesis, METU, 2011. http://etd.lib.metu.edu.tr/upload/12613598/index.pdf.
Повний текст джерелаC for 8 hours and the second step was the diffusion and crystallization parts that are accomplished at 900°
C for several minutes. The Raman measurements revealed out the crystallinity and grain size. The crystallinity of the polysilicon thin films was also identified by X-Ray diffraction measurements. Finally, the Secondary Ion Mass Spectroscopy (SIMS) analysis was carried out to find out the amount of boron that diffuses into Si film. It was found that a graded boron profile, which is desirable for the solar cell applications, was achieved.
Ferrada, Martínez Pablo [Verfasser]. "Diffusion through Oxide Barriers for Solar Cell Applications / Pablo Ferrada Martínez." Konstanz : Bibliothek der Universität Konstanz, 2012. http://d-nb.info/1023652773/34.
Повний текст джерелаLiu, Piao. "Heterojunctions and Schottky Diodes on Semiconductor Nanowires for Solar Cell Applications." UKnowledge, 2010. http://uknowledge.uky.edu/gradschool_diss/77.
Повний текст джерелаEsmaeel, Omar Mohammed. "Synthesis and characterisation of new conjugated polymers for solar cell applications." Thesis, University of Sheffield, 2018. http://etheses.whiterose.ac.uk/22302/.
Повний текст джерелаSalomon, Ashley. "Oxygen precipitate studies in silicon for gettering in solar cell applications." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/114090.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (page 31).
Oxygen precipitates in silicon can be used (in a process called internal gettering) as sites of heterogeneous nucleation of precipitates of iron and other transition metal that are harmful to solar cell device operation. Oxygen precipitate densities in p- (10¹⁴ boron atoms/cm³) wafers were quantified using chemical etch techniques. The precipitate densities were then used to estimate times to getter iron based on a diffusion limited precipitation model. Oxygen precipitate densities in p++ (10¹⁹ boron atoms/cm³) wafers were quantified using chemical etch techniques. High levels of boron in p++ wafers make quantifying precipitate densities particularly difficult, via etching, or other methods because precipitate densities in highly doped wafers are very high and the size of precipitates small.
by Ashley Salomon.
S.B.
Waggett, Jonathan. "The study of inorganic semiconductor quantum dots for solar cell applications." Thesis, University of Bristol, 2005. http://hdl.handle.net/1983/916bf29c-07eb-4601-be30-534e81635c1b.
Повний текст джерелаSchnabel, Manuel. "Silicon nanocrystals embedded in silicon carbide for tandem solar cell applications." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:da5bbb64-0bcd-4807-a9f3-4ff63a9ca98d.
Повний текст джерелаJoshi, Monali-Bianca Dileep. "Fabrication of engineered composite semiconductor substrates for flexible solar cell applications." Diss., Restricted to subscribing institutions, 2009. http://proquest.umi.com/pqdweb?did=1905650241&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.
Повний текст джерелаCalabrese, Anna. "Design, Synthesis and Characterization of Random Copolymers for Photovoltaic Applications." Thesis, Università degli Studi di Catania, 2011. http://hdl.handle.net/10761/225.
Повний текст джерелаAddo, Ernest A. "Fritless doped self-aligning thick film metallization fo crystalline solar cell applications." Click to view the dissertation via Digital dissertation consortium, 2004.
Знайти повний текст джерелаPrincipal faculty advisor: S. Ismat Shah, Robert L. Opila, Dept. of Materials Science & Engineering. Includes bibliographical references (leaves 171-178).
Ng, Annie, and 吳玥. "Polymer blend film for photovoltaic applications optical characterization and solar cell performance." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2013. http://hdl.handle.net/10722/196013.
Повний текст джерелаpublished_or_final_version
Physics
Doctoral
Doctor of Philosophy
Yuan, Guangbi. "Synthesis and Applications of Vertically Aligned Silicon Nanowire Arrays for Solar Energy Conversion." Thesis, Boston College, 2012. http://hdl.handle.net/2345/3738.
Повний текст джерелаSolar energy, the most abundant and free renewable energy, holds great promise for humanity's sustainable development. How to efficiently and inexpensively capture, covert solar energy and store it for off peak usages constitutes a grand challenge for the scientific community. Photovoltaic devices are promising candidates but are too costly to be implemented in large scales. On a fundamental level, this is due to the dilemma that the length scales of the optical pathways and electrical pathways often do not match within the photovoltaic device materials. Consider traditional Si solar cell as an example, effective light absorption requires up to hundreds of microns material while the photogenerated charge carries can only diffuse less than a few microns or even shorter before recombination. Such a problem may be solved by using Si nanowires (SiNWs) because vertically aligned nanowires can orthogonalize the light absorption and charge carrier collection pathways, thereby enabling the use of low-cost materials for practically appealing solar energy conversion devices. The objective of this thesis work is to explore low-cost synthesis of vertically aligned SiNW arrays and study their performance in both solar energy conversion and storage devices. We developed a method to synthesize vertically aligned SiNW arrays in a hot-wall chemical vapor deposition system with tunable length, doping level, and diameter for systematical studies. Empowered by the synthetic control, various types of vertical SiNW arrays were characterized by both steady-state (photoelectrochemical measurement) and transient (electrochemical impedance spectroscopy) techniques in a photoelectrochemical cell platform. Additionally, SiNWs were demonstrated to be a promising candidate for photoelectrochemical aromatic ketone reduction and CO₂ fixation. The reactions studied in this thesis are in close resemblance to natural photosynthesis and the resulted product molecules are precursors to nonsteroidal anti-inflammatory drugs, ibuprofen and naproxen. Lastly, vertical transparent conductive oxide nanotubes were prepared from vertical SiNW array templates. Ultrathin hematite (Fe₂O₃) film was coated on the nanotube scaffold by atomic layer deposition to form a heteronanostructure photoelectrode for efficient solar water oxidation. Our results highlight the potential of vertically aligned SiNW arrays in solar cell, solar water splitting and artificial photosynthesis applications
Thesis (PhD) — Boston College, 2012
Submitted to: Boston College. Graduate School of Arts and Sciences
Discipline: Chemistry
Johansson, Erik. "Interfaces in Dye-Sensitized Oxide / Hole-Conductor Heterojunctions for Solar Cell Applications." Doctoral thesis, Uppsala : Acta Universitatis Upsaliensis : Universitetsbiblioteket [distributör], 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-6892.
Повний текст джерелаEkanayake, Gayani. "Polycrystalline silicon thin films by aluminium induced crystallisation for solar cell applications." Thesis, London South Bank University, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.435201.
Повний текст джерелаLooney, Erin Elizabeth. "Oxygen defect engineering for silicon solar cell applications : process design and modeling." Thesis, Massachusetts Institute of Technology, 2017. http://hdl.handle.net/1721.1/111715.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 78-82).
One of the main remaining impurities that lowers efficiencies of silicon solar cells are oxygen ring defects that are incorporated into the material during growth. These defects decrease overall cell efficiencies by around 20% (rel.) resulting in a yield loss of about 1/4 h of each monocrystalline silicon ingot. To control the oxygen defects and put them in the least harmful form possible, a new cell processing step call tabula rasa (TR) is explored. TR is a high temperature process for a short duration. In this work, TR is found to be a kinetically-limited process through several oxygen precipitate dissolution experiments from which the activation energy of dissolution is found to be equivalent to the migration enthalpy for oxygen in silicon. With this knowledge, a predictive kinetic model is built which can be used for process optimization. A multiscale end-to-end model is also developed to determine the effect of rings on cell performance. Using oxygen defect parameter inputs, device modelling, and a spatially resolved two diode mesh, PL images are transformed into current maps and used to determine cell efficiencies for inhomogeneously distributed defects. A reduction in efficiency for cells with ring defects is simulated for several ring defect concentrations and compared to a non-defective cell. Another strategy for lowering cost and mitigating oxygen ring defects is using thinner silicon absorbers with inherent defect tolerance. Using the multiscale modeling platform described above, thin silicon wafers are compared to typical cells. It is shown that thin cells with ring defects perform with higher efficiencies, with less than half the material used. The thin silicon strategy is compared with the TR process addition, and future work is outlined to further explore these oxygen mitigation options.
by Erin Elizabeth Looney.
S.M.
Jamshidi, Zavaraki Asghar. "Engineering Multicomponent Nanostructures for MOSFET, Photonic Detector and Hybrid Solar Cell Applications." Doctoral thesis, KTH, Teoretisk kemi och biologi, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-177609.
Повний текст джерелаQC 20151125
Benson, Jessica J. "Spectroscopic studies of organic donor-acceptor blend films for solar cell applications." Thesis, Imperial College London, 2007. http://hdl.handle.net/10044/1/11386.
Повний текст джерелаZhou, Xuan. "Structural engineering of porphyrin small molecules for bulk heterojunction organic solar cell applications." HKBU Institutional Repository, 2018. https://repository.hkbu.edu.hk/etd_oa/563.
Повний текст джерелаChow, Simon Ka Ming. "Integration of High Efficiency Solar Cells on Carriers for Concentrating System Applications." Thèse, Université d'Ottawa / University of Ottawa, 2011. http://hdl.handle.net/10393/19932.
Повний текст джерелаRauer, Michael [Verfasser]. "Alloying from Screen-printed Aluminum Pastes for Silicon Solar Cell Applications / Michael Rauer." Konstanz : Bibliothek der Universität Konstanz, 2015. http://d-nb.info/1079010297/34.
Повний текст джерелаEngman, Jessica. "Experimental study of Cu2ZnSn(Se,S)4 thin films for solar cell applications." Thesis, Uppsala universitet, Fasta tillståndets elektronik, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-155091.
Повний текст джерелаSampson, Karen E. "NANOPOROUS ALUMINA ON MOLYBDENUM AND ITO SUBSTRATES FOR NANO-HETEROJUNCTION SOLAR CELL APPLICATIONS." UKnowledge, 2007. http://uknowledge.uky.edu/gradschool_theses/447.
Повний текст джерелаWen, Kuo Yu, and 郭鈺雯. "Development of Solar Cell Applications." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/00449123099254517619.
Повний текст джерела大葉大學
工學院碩士在職專班
101
The issues of environmental consciousness and clean energy are getting more important nowadays. Among them, there is no doubt that the use of solar energy catches more attention around the world. Scientists from Bell Labs invented the solar cell in 1954 and created a new revenue stream via its solar cell business. As so far, there are several different kinds of solar cells, including silcon based, thin film and new concept. However, solar photovoltaic cells have more production costs than other energy. Therefore, many governments fund subsidies to help the solar photovoltaic industries and encourage them to make big savings on costs through greater conversion efficiency of solar photovoltaic cells. Nowadays the use of solar photovoltaic cells plays an important role in every one’s daily life. Therefore, solar photovoltaic industries focus on building integrated photovoltaic (BIPV) . And they can be connected to many other industries, such as agriculture, fisheries and Animal husbandry in Taiwan. Besides, high concentration photovoltaic (HCPV) have been mainly introduced in large solar photovoltaic power plants. Based on the profound foundation of the semiconductor industry and the largest amount of concentrator photovoltaic equipment, called metal-organic chemical vapor deposition system in the world, Taiwan’s solar photovoltaic industries definitely take a great advantage in the future.
Tummala, Rajesh. "Solution processed optical coatingsfor solar cell applications." 2009. http://hdl.handle.net/10106/1708.
Повний текст джерелаjeng, cheng, and 陳政傑. "Nanostructure for dye-sensitized solar cell applications." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/87664066912823098864.
Повний текст джерела國立中正大學
光機電整合工程所
98
In this study, we fabricated a dye-sensitized solar cell (DSC) using an electrode of the titanium dioxide (TiO2) hollow spheres, and examined the photovoltaic performance under simulated sunlight. TiO2 hollow spheres were fabricated by burning out the PS balls in the TiO2 Sol-gel paste. The efficiency of DSSC with 400nm diameter hollow spheres in 10 μm P10 TiO2 film can reach to 4.87%. (about 40% improvement) The 2nd microstructure of TiO2 hollow spheres were fabricated by using Pulsed Laser Deposition (PLD) techniques. This film incorporated multi hollow sphere microstructures would produce efficient electron transport paths and mitigate recombination processes. This DSSC with multi hollow sphere microstructure show a high open-circuit voltage(Voc) of 7.5V and Fill Factor(F.F.) of 0.7 under an illumination of one sun (AM1.5 global, 100 mW/cm2) .
Huang, Shih-Han, and 黃詩涵. "Carrier Dynamics in Materials for Solar Cell Applications." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/10327427225059706622.
Повний текст джерела國立交通大學
電子物理系所
100
Carrier dynamics in materials for solar cell applications have been investigated by time-resolved photoluminescence. One is InAs self-assembled quantum dots (QDs) covered with a thin AlxGa1-xAs0.8Sb0.2 layer. There is a type I-like transition in type II InAs/GaAsSb QDs due to the recombination of electrons from QDs and holes residing in extended levels composed by the capping layer and the QDs, which is activated by thermal excitation. With the increasing Al content, a blueshift in the QD emission peak and a shortening of the PL decay time are observed, indicating that the band alignment can be controlled by varying the Al content in the AlGaAsSb capping layer. Increasing the valence band offset tend to push the hole wave function into QDs, which in turn improves the overlap between the electron and hole wave functions. According to the experimental results and the theoretical calculations based on eight-band k ⃑∙p ⃑ model, we demonstrate that the AlxGa1-xAs0.8Sb0.2 covered InAs QDs exhibit a type-I band alignment when the Al content exceeds 0.2.Another one is CIGS solar cell. High conversion efficiency in CIGS solar cell is associated with stronger PL intensity and longer carrier lifetime, which is caused by the domination of SRH recombination at room temperature. Besides, radiative recombination in CIGS device is strongly affected by the built-in electric field. Therefore, the intrinsic carrier lifetime can be obtained by injecting higher carrier density.
Lin, Jui Chan, and 林瑞展. "Fabrication of AZO films for solar cell applications." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/70207104997720001702.
Повний текст джерела中興大學
電機工程學系所
95
Aluminum doped zinc oxide (AZO) thin films deposited by RF sputter and the effects on electrical properties of amorphous silicon thin-film solar cells were studied. The electrical, optical, and structural properties of the AZO films were investigated as a function of the substrate temperature and the RF power with a background gas Ar. Argon gas pressure during deposition was kept at 5×10-2 torr. The substrate temperature and the RF power were ranging from 27 to 380℃ and 40 to 160 W, respectively. The transmittances of all the samples were above 85% in the wavelength of 400-800nm. The optical properties of the films, which change in accordance with the Burstein-Moss effect, are consistent with the observed changes in electrical properties. Optical band gap widens with carrier concentration. For structural analysis, crystallinity and surface morphology of AZO films were investigated by X-ray diffraction (XRD) and SEM, respectively. It is found that the roughness of the samples increases with substrate temperature. In order to improve the electrical characteristics of AZO films, a novel post H2-plasma treatment for 15-120 min was performed. The sheet resistances of the AZO films decreased form 516.3 to 90.1 Ω/sq. However, high H2-plasma power would damage the film surface and increase the sheet resistance. The post H2-plasma treated AZO films had been applied for amorphous silicon thin-film solar cells and better short current and efficiency of cells were obtained.
Lin, Yi-Dong, and 林毅東. "Plasmonic-assisted transparent metallic electrode for solar cell applications." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/98267322709883572489.
Повний текст джерела國立東華大學
光電工程研究所
98
In this thesis, we simulate the optical properties of one-dimensional periodically structures. In structure, we change the thickness、period、width ratio of aluminum grating,and vary the distance between the aluminum grating to study the structure by changing the parameters of the impact on the transmission, and then find the high transmission of metal electrodes, and use it in solar cell. In order to improve the current spreading of a solar cell, a comb-shaped metal electrode is usually applied on the transparent conductive oxide (TCO). Nevertheless, the opaque metal electrode limits the optical efficiency. In this study, two kinds of metallic structure are proposed as a transparent metal electrode,those metal electrode were composed of single layer plasmonic grating structure and stacked plasmonic grating structure, to make a comb-shaped metal electrode into grating that are transparent can improve optical efficiency greatly.(1)The single layer plasmonic structure has higher overall transmission efficiency than the stacked one. (2)Owing that the stacked structure has a larger metal-covered area, the transverse resistance of the stacked structure can be lower than that of single layer structure.(3) We can find the best transmittance 44.45% for single layer metal grating at period=100nm, tm=110nm, and 31.33% for stacked plasmonic grating structure at period=100nm, tm=50nm, tg=50nm (4) In the four materials, Au, Ag, Cu and Al, high transmittance occurs when using Al and Ag for metal electrode. We choose Al for the material of metal electrode because of Al is much cheaper than Ag.(5)single layer metal grating in the sub-wavelength thickness of aluminum, will not have much effect on transmission. Finally,we use two kinds of metallic structure are proposed as a transparent metal electrode in a-Si solar cell. Two kinds of metallic structure are proposed as a transparent metal electrode simultaneously proving higher transmission and conductivity. In addition We can according to different needs, to adjust the incident light. Therefore, the highest transmission area of the single layer plasmonic grating is due to the waveguide mode coupled by the periodic grating or caused by the SP resonance. It will be useful for solar cell application.
Huang, Guo-Yang, and 黃國洋. "Applications of Nanocrystalline TiO2 for Dye-Sensitized Solar Cell." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/54357623814088331192.
Повний текст джерела南台科技大學
化學工程與材枓工程系
95
Abstract The efficiency of dye-sensitized solar cells(DSSCs) has been investigated under different conditions. The optimal conditions were systematically studied by using the statistical experimental strategy. At the optimal conditions, a high efficient dye-sensitized solar cell has been assembled. Commercial TiO2 paste and sol-gel TiO2 paste derived from our preparation were used to make nanopourous TiO2 electrode, and the platinum counter-electrodes were prepared using the sputtering method and the spin-coating methods, respectively. The liquid electrolyte, 0.1M I2、0.5M 4-tert-Butylpyridine(TBP)、0.1M LiI and 3-methoxypropionitrile(MPN) or acetonitrile(ACN) , was used in the photovoltaic devices. Furthermore, the higher photovoltaic conversion efficiency was obtained by using the spin-coating method to make Pt counter-electrode in the device. In order to increase the efficiency of the dye-sensitized solar cell, we used acetonitrile(ACN) as the solvent to make up liquid electrolyte and get the higher photovoltaic conversion efficiency to 4.2% on the 30Ω FTO substrate. When we changed the FTO glass as substrate , a higher efficiency of 6.2% device was obtained under same other conditions . Finally , we used the statistical experimental strategies to generalize the best conditions for the component of dye-sensitized solar cell in order to obtain the higher photovoltaic conversion efficiency. The optimal conditions as follows: 10Ω FTO substrate , 8μm TiO2 film thickness , ACN as solvent for electrolyte , 15% PEG content in TiO2 paste and spin-coated Pt counter-electrode . The highest efficiency is about 6.6% .
Hsiang-hsiu, Tseng, and 曾祥修. "Polymorphous Aluminum Induced Poly-crystallization for Solar Cell Applications." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/73716460886966603031.
Повний текст джерела南台科技大學
光電工程系
98
In this study, we used photolithography to fabricate aluminum layer with various surface patterns that can selectively induce crystallization of silicon, with the surface roughening treatment of transparent electrode, light can pass through amorphous silicon and poly-silicon and thus increase the light absorption range (380 nm ~ 1100 nm) in silicon thin film solar cells, leading to the enhancement in the power conversion efficiency. Tow circular diameters of 5 and 10 μm and two pitches of patterns of Al were used to yield 8 area coverage ratio of 12.6, 19.6, 25.6, 34.9, 65.9, 74.4, 80.6 and 87.6%. The thickness of Al film 25nm to 200nm, patterned aluminum were fabricated on both glass and ITO glass substrates and aluminum induced crystallization was conducted at 600 ℃, 1Pa thermal annealing environment. Results showed that at α-Si/Al thickness ratio of 200 nm/25 nm silicon crystals can be formed on bare glass after annealing, with optimal crystallization of silicon at α-Si/Al thickness of 200 nm/100 nm. Whereas on ITO/glass α-Si/Al thickness ratio of 200 nm/50 nm silicon crystals can be observed. On bare glass with Si / Al thickness ratio of 200 nm/100 nm and aluminum area ratio from 74.4 to 87.4%, optical band gap of 1.2 eV was measured .
Lin, Bo-Jhih, and 林柏志. "Novel Photo-Sensitizers for Dye-Sensitized Solar Cell Applications." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/22166834764583204340.
Повний текст джерела國立暨南國際大學
應用化學系
104
This thesis is focuse on the optimizing dye-sensitized solar cells of two series of novel photosensitizers. The first series of dyes (Me2N-PS1, Me2N-PS2, Me2N-PS3, Oct2N-PS1) are based on the published porphyrin dyes (LD14, LD16). For these PS dyes, we introduce thiophene derivative to substitute phenylethynyl (PE) as the bridge between the porphyrin core and the anchoring group. The result show a trend of Me2N-PS1 (6.76%) > Oct2N-PS1 (6.68%) > Me2N-PS2 (6.37%) > Me2N-PS3 (4.62%) This is in consistent with the reported PE1~PE4 dyes. In the second part, stable artificial chlorophyll, derivatives (LS-01, LS-11) were synthesized and used as photosensitizers. Remarkably, LS dyes show vivid colors (pink and blue) on TiO2. Phtotvoltaic measurements show a trend of efficiencies of LS dyes LS-11 (5.36%) > LS-01 (4.67%) > H2PE1 (2.06%).
Chen, Chien-Ming, and 陳建銘. "Fabrication of CuGaSe2/Si heterostructures for solar-cell applications." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/62378035998612047542.
Повний текст джерела國立中山大學
材料與光電科學學系研究所
104
For the composition control and testing electric properties, polycrystalline CuGaSe2 (CGSe) films with near-stoichiometric compositions were deposited by three-source co-evaporation on glass without the substrate rotation. XRD analysis veried that the film is single phase with the chalcopyrite structure. From Cu-rich to Ga-rich regions for the film grown on a glass substrate,the film resistivities varied from 3.7x10-1 Ω‧cm to 7.4x104 Ω‧cm. Further experiments on the formation of Ohmic contacts onto CGSe films indicated that the remaining Cu-Se phase on the surface of Cu-rich CGSe could improve the contact properties for the film attached with Mo metal electrodes. Since the successful epitaxial growth should be demonstrated prior to device fabrication, Cu-rich CGSe(p-type CGSe) films were grown on (100) n-type Si wafers.XRD analysis reveal that the c-axis of tetragonal unit cell aligned parallel to the substrate surface to lower the strain energy and thus leaded to the formation of orientation domain structure. For the films grown at 550℃, the XRD peak of CGSe was broden and asymmetric indicating an interduffusion at the CGSe/Si interface. Auger depth profiling showed that a conderable amount of Si was diffused into CGSe. Considering in a Cu-rich CGSe that Si might incorporate into the lattice site of Ga and became as a donor, which could compensate the acceptor in p-type CGSe. This would seriously degrade the junction properties of p-CGSe/n-Si device structure. It is strongly suggested that a low-temperature process such as photo-assited MBE should be employed for the film growth. Keywords:Molecular beam deposition,orientation domain structure,CuGaSe2 epitaxy, CuGaSe2/Si heterojunction solar cell