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Автор: Grafiati

Опубліковано: 7 липня 2024

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1

Ramírez, Joan Manel, Pierre Fanneau de la Horie, Jean-Guy Provost, Stéphane Malhouitre, Delphine Néel, Christophe Jany, Claire Besancon, et al. "Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers." Applied Sciences 11, no. 23 (November 23, 2021): 11096. http://dx.doi.org/10.3390/app112311096.

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Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm2, a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs).

2

Xiao, Feng, Qin Han, Han Ye, Shuai Wang, and Fan Xiao. "InP-based high-speed monolithic PIN photodetector integrated with an MQW semiconductor optical amplifier." Japanese Journal of Applied Physics 61, no. 1 (January 1, 2022): 012005. http://dx.doi.org/10.35848/1347-4065/ac38fb.

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Abstract We demonstrate an InP-based high-speed monolithic PIN photodetector (PD) integrated with a multi-quantum well semiconductor optical amplifier (SOA). A butt-joint scheme is adopted to connect the SOA and evanescent wave PD. The chip allows for a separate design for the SOA and the PD, and needs only two metal-organic chemical vapor deposition growth steps, which promises high yield and reduced manufacturing cost. The fabricated 5 × 20 μ m 2 PD shows a low dark current of 300 pA at −3V. The optical gain bandwidth of the SOA is 50 nm, covering the whole c-band. The gain ripple of the SOA is 0.5 dB, indicating that the internal parasitic reflectivity is negligible. For an integrated chip with a 500 μm SOA, the on-chip gain and total chip responsivity at 1545 nm can reach 12.8 dB and 7.8 A W−1, respectively. The insertion loss of the butt-joint interface is estimated to be 1.05 dB/interface. The small signal 3 dB bandwidth at −5V of the integrated chip reaches 20 GHz, showing no deterioration compared to a discrete PD.

3

Li Kam Wa, P. "Intermixing of multiple quantum wells for all-optical integrated circuits." Optical and Quantum Electronics 23, no. 7 (January 1991): S925—S939. http://dx.doi.org/10.1007/bf00624982.

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4

Kowsz, Stacy J., Erin C. Young, Benjamin P. Yonkee, Christopher D. Pynn, Robert M. Farrell, James S. Speck, Steven P. DenBaars, and Shuji Nakamura. "Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells." Optics Express 25, no. 4 (February 13, 2017): 3841. http://dx.doi.org/10.1364/oe.25.003841.

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5

Lu, Jen-Hsiang, Kun-Jheng Wu, Kuang-Jou Hsieh, Chieh-Hsiung Kuan, Juei-Yang Feng, Tsong-Sheng Lay, Chen-Wei Yang, and Shun-Li Tu. "A Superlattice Infrared Photodetector Integrated With Multiple Quantum Wells to Improve the Performance." IEEE Journal of Quantum Electronics 43, no. 1 (January 2007): 72–77. http://dx.doi.org/10.1109/jqe.2006.884584.

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6

Feng, Jijun, Ryoichi Akimoto, Shin-ichiro Gozu, Teruo Mozume, Toshifumi Hasama, and Hiroshi Ishikawa. "Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch." Optics Express 21, no. 13 (June 25, 2013): 15840. http://dx.doi.org/10.1364/oe.21.015840.

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7

Новиков, И. И., И. А. Няпшаев, А. Г. Гладышев, В. В. Андрюшкин, А. В. Бабичев, Л. Я. Карачинский, Ю. М. Шерняков та ін. "Влияние состава волноводного слоя на излучательные параметры лазерных гетероструктур InGaAlAs/InP спектрального диапазона 1550 нм". Физика и техника полупроводников 56, № 9 (2022): 933. http://dx.doi.org/10.21883/ftp.2022.09.53418.9892.

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The influence of InGaAlAs waveguide layer composition on the photoluminescence and electroluminescence in the 1550-nm spectral range of heterostructures based on thin strained In0.74Ga0.26As quantum wells has been studied. An approach is proposed that allows based on the analysis of electroluminescence.to carry out a comparative analysis of the deferential gain in fabricated laser diodes. It is shown that decrease of the molar fraction of aluminum in waveguide InGaAlAs layers matched in lattice constant with indium phosphide leads to falling of integrated photoluminescence intensity, however, laser diodes with In0.53Ga0.31Al0.16As waveguide layers demonstrate a higher differential gain compared to laser diodes with In0.53Ga0.27Al0.20As waveguide.

8

Zhang, Yi, Jianfeng Gao, Senbiao Qin, Ming Cheng, Kang Wang, Li Kai, and Junqiang Sun. "Asymmetric Ge/SiGe coupled quantum well modulators." Nanophotonics 10, no. 6 (March 19, 2021): 1765–73. http://dx.doi.org/10.1515/nanoph-2021-0007.

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Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

9

Хабибуллин, Р. А., К. В. Маремьянин, Д. С. Пономарев, Р. Р. Галиев, А. А. Зайцев, А. И. Данилов, И. С. Васильевский та ін. "Квантово-каскадный лазер на 3.3 ТГц на основе активного модуля из трех квантовых ям GaAs/AlGaAs с рабочей температурой >120 K". Физика и техника полупроводников 55, № 11 (2021): 989. http://dx.doi.org/10.21883/ftp.2021.11.51551.46.

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In this work, we have optimized the THz QCL design with an active module based on three GaAs/Al0.18Ga0.82As quantum wells for high-temperature generation at a frequency of about 3.3 THz. A heterostructure based on the developed design with an active region thickness of 10 μm was grown by molecular beam epitaxy with a deviation of the active module thickness from the nominal less than 1%. The fabricated THz QCLs with a double metal waveguide demonstrate lasing up to a temperature of 125 K. Investigations of the I–V characteristics, the dependences of the integrated radiation on the current and the lasing spectra showed good agreement with the calculated characteristics.

10

Shen, Jinyong, Tianyun Zhu, Jing Zhou, Zeshi Chu, Xiansong Ren, Jie Deng, Xu Dai, et al. "High-Discrimination Circular Polarization Detection Based on Dielectric-Metal-Hybrid Chiral Metamirror Integrated Quantum Well Infrared Photodetectors." Sensors 23, no. 1 (December 24, 2022): 168. http://dx.doi.org/10.3390/s23010168.

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Circular polarization detection enables a wide range of applications. With the miniaturization of optoelectronic systems, integrated circular polarization detectors with native sensitivity to the spin state of light have become highly sought after. The key issues with this type of device are its low circular polarization extinction ratios (CPERs) and reduced responsivities. Metallic two-dimensional chiral metamaterials have been integrated with detection materials for filterless circular polarization detection. However, the CPERs of such devices are typically below five, and the light absorption in the detection materials is hardly enhanced and is even sometimes reduced. Here, we propose to sandwich multiple quantum wells between a dielectric two-dimensional chiral metamaterial and a metal grating to obtain both a high CPER and a photoresponse enhancement. The dielectric-metal-hybrid chiral metamirror integrated quantum well infrared photodetector (QWIP) exhibits a CPER as high as 100 in the long wave infrared range, exceeding all reported CPERs for integrated circular polarization detectors. The absorption efficiency of this device reaches 54%, which is 17 times higher than that of a standard 45° edge facet coupled device. The circular polarization discrimination is attributed to the interference between the principle-polarization radiation and the cross-polarization radiation of the chiral structure during multiple reflections and the structure-material double polarization selection. The enhanced absorption efficiency is due to the excitation of a surface plasmon polariton wave. The dielectric-metal-hybrid chiral mirror structure is compatible with QWIP focal plane arrays.

11

Tossoun, Bassem, Jizhao Zang, Sadhvikas J. Addamane, Ganesh Balakrishnan, Archie L. Holmes Holmes, and Andreas Beling. "InP-Based Waveguide-Integrated Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells and 10-GHz Bandwidth at 2 $ \mathbf {\mu }$m Wavelength." Journal of Lightwave Technology 36, no. 20 (October 15, 2018): 4981–87. http://dx.doi.org/10.1109/jlt.2018.2867808.

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12

Qiao, Zhongliang, Xiang Li, Jia XuBrian Sia, WanJun Wang, Hong Wang, Lin Li, Zaijin Li, et al. "Mode-locked operation characteristics of a monolithic integrated two-section InGaAs/GaAs double quantum wells laser with asymmetric waveguide." Optics & Laser Technology 147 (March 2022): 107702. http://dx.doi.org/10.1016/j.optlastec.2021.107702.

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13

Zhang, Yiyun, Dominic Lepage, Yiming Feng, Sihan Zhao, Hongsheng Chen, and Haoliang Qian. "Resonant inelastic tunneling using multiple metallic quantum wells." Nanophotonics, June 21, 2023. http://dx.doi.org/10.1515/nanoph-2023-0231.

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Abstract Tunnel nanojunctions based on inelastic electron tunneling (IET) have been heralded as a breakthrough for ultra-fast integrated light sources. However, the majority of electrons tend to tunnel through a junction elastically, resulting in weak photon-emission power and limited efficiency, which have hindered their practical applications to date. Resonant tunneling has been proposed as a way to alleviate this limitation, but photon-emissions under resonant tunneling conditions have remained unsatisfactory for practical IET-based light sources due to the inherent contradiction between high photon-emission efficiency and power. In this work, we introduce a novel approach that leverages much stronger resonant tunneling enhancement achieved by multiple metallic quantum wells, which has enabled the internal quantum efficiency to reach ∼1 and photon-emission power to reach ∼0.8 µW/µm2. Furthermore, this method is applicable with different electronic lifetimes ranging from 10 fs to 100 fs simultaneously, bringing practical implementation of IET-based sources one step closer to reality.

14

Delphan, Anthonin, Maxim N. Makhonin, Tommi Isoniemi, Paul M. Walker, Maurice S. Skolnick, Dmitriy Krizhanovskii, Dmitry Skryabin, Jean-Francois Carlin, Nicolas Grandjean, and Raphaël Butté. "Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells." APL Photonics, January 9, 2023. http://dx.doi.org/10.1063/5.0132170.

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Microcavity polaritons are strongly interacting hybrid light-matter quasiparticles, which are promising for the development of novel light sources and active photonic devices. Here, we report polariton lasing in the UV spectral range in microring resonators based on GaN/AlGaN slab waveguides, with experiments carried out from 4 K up to room temperature. Stimulated polariton relaxation into multiple ring resonator modes is observed, which exhibit threshold-like dependence of the emission intensity with pulse energy. The strong exciton-photon coupling regime is confirmed by the significant reduction of the free spectral range with energy and the blueshift of the exciton-like modes with increasing pulse energy. Importantly, the exciton emission shows no broadening with power, further confirming that lasing is observed at electron-hole densities well below the Mott transition. Overall, our work paves the way towards developmentof novel UV devices based on the high-speed slab waveguide polariton geometry operating up to room temperature with potential to be integrated into complex photonic circuits.

15

Chesi, Giovanni, virginia falcone, Stefano Calcaterra, Michele Virgilio, and Jacopo Frigerio. "Modelling second harmonic generation at mid-infrared frequencies in waveguide integrated Ge/SiGe quantum wells." Optics Express, March 27, 2023. http://dx.doi.org/10.1364/oe.483888.

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16

Faverzani, Marco, Stefano Calcaterra, Paolo Biagioni, and Jacopo Frigerio. "Strong coupling in metal-semiconductor microcavities featuring Ge quantum wells: a perspective study." Nanophotonics, January 24, 2024. http://dx.doi.org/10.1515/nanoph-2023-0730.

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Abstract In this work we theoretically investigate the possibility of observing strong coupling at mid-infrared frequencies within the group-IV semiconductor material platform. Our results show that the strong coupling condition is attainable in Ge/SiGe quantum wells integrated in hybrid metal-semiconductor microcavities, featuring a highly n-doped SiGe layer as one of the mirrors.

17

Srikam, Saranisorn, Worawat Traiwattanapong, Pichet Limsuwan, and Papichaya Chaisakul. "An FDTD investigation of compact and low-voltage waveguide-integrated plasmonic Ge/SiGe multiple quantum wells photodetectors." IEEE Photonics Journal, 2022, 1–8. http://dx.doi.org/10.1109/jphot.2022.3202882.

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18

Talamas Simola, Enrico, Michele Ortolani, Luciana Di Gaspare, Giovanni Capellini, Monica De Seta, and Michele Virgilio. "Asymmetric-coupled Ge/SiGe quantum wells for second harmonic generation at 7.1 THz in integrated waveguides: a theoretical study." Nanophotonics, January 18, 2024. http://dx.doi.org/10.1515/nanoph-2023-0697.

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Abstract We present a theoretical investigation of guided second harmonic generation at THz frequencies in SiGe waveguides embedding n-type Ge/SiGe asymmetric coupled quantum wells to engineer a giant second order nonlinear susceptibility. A characteristic of the chosen material system is the existence of large off-diagonal elements in the χ 2 tensor, coupling optical modes with different polarization. To account for this effect, we generalize the coupled-mode theory, proposing a theoretical model suitable for concurrently resolving every second harmonic generation interaction among guide-sustained modes, regardless of which χ 2 tensor elements it originates from. Furthermore, we exploit the presence of off-diagonal χ 2 elements and the peculiarity of the SiGe material system to develop a simple and novel approach to achieve perfect phase matching without requiring any fabrication process. For a realistic design of the quantum heterostructure we estimate second order nonlinear susceptibility peak values of ∼7 and ∼1.4 × 105 pm/V for diagonal and off diagonal χ 2 elements, respectively. Embedding such heterostructure in Ge-rich SiGe waveguides of thicknesses of the order of 10–15 μm leads to second harmonic generation efficiencies comprised between 0.2 and 2 %, depending on the choice of device parameters. As a case study, we focus on the technologically relevant frequency of 7.1 THz, yet the results we report may be extended to the whole 5–20 THz range.

19

Ojanen, Samu‐Pekka, Jukka Viheriälä, Nouman Zia, Eero Koivusalo, Joonas Hilska, Heidi Tuorila, and Mircea Guina. "Widely Tunable (2.47–2.64 µm) Hybrid Laser Based on GaSb/GaInAsSb Quantum‐Wells and a Low‐Loss Si ₃ N ₄ Photonic Integrated Circuit." Laser & Photonics Reviews, April 14, 2023. http://dx.doi.org/10.1002/lpor.202201028.

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20

Qiao, Zhongliang, Xiang Li, Jia XuBrian Sia, WanJun Wang, Hong Wang, Lin Li, Zaijin Li, et al. "Corrigendum to “Mode-locked Operation Characteristics of a Monolithic Integrated Two-section InGaAs/GaAs Double Quantum Wells Laser with Asymmetric Waveguide” [Optics & Laser Technol. 147 (2022) 107702, Pp. 1-8. https://doi.org/10.1016/j.optlastec.2021.107702]." Optics & Laser Technology, May 2024, 111080. http://dx.doi.org/10.1016/j.optlastec.2024.111080.

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