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Готові списки джерел за темами / SOA integrated optics Quantum wells

Добірка наукової літератури з теми "SOA integrated optics Quantum wells"

Автор: Grafiati

Опубліковано: 7 липня 2024

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Статті в журналах з теми "SOA integrated optics Quantum wells":

1

Ramírez, Joan Manel, Pierre Fanneau de la Horie, Jean-Guy Provost, Stéphane Malhouitre, Delphine Néel, Christophe Jany, Claire Besancon, et al. "Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers." Applied Sciences 11, no. 23 (November 23, 2021): 11096. http://dx.doi.org/10.3390/app112311096.

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Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm2, a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs).

2

Xiao, Feng, Qin Han, Han Ye, Shuai Wang, and Fan Xiao. "InP-based high-speed monolithic PIN photodetector integrated with an MQW semiconductor optical amplifier." Japanese Journal of Applied Physics 61, no. 1 (January 1, 2022): 012005. http://dx.doi.org/10.35848/1347-4065/ac38fb.

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Abstract We demonstrate an InP-based high-speed monolithic PIN photodetector (PD) integrated with a multi-quantum well semiconductor optical amplifier (SOA). A butt-joint scheme is adopted to connect the SOA and evanescent wave PD. The chip allows for a separate design for the SOA and the PD, and needs only two metal-organic chemical vapor deposition growth steps, which promises high yield and reduced manufacturing cost. The fabricated 5 × 20 μ m 2 PD shows a low dark current of 300 pA at −3V. The optical gain bandwidth of the SOA is 50 nm, covering the whole c-band. The gain ripple of the SOA is 0.5 dB, indicating that the internal parasitic reflectivity is negligible. For an integrated chip with a 500 μm SOA, the on-chip gain and total chip responsivity at 1545 nm can reach 12.8 dB and 7.8 A W−1, respectively. The insertion loss of the butt-joint interface is estimated to be 1.05 dB/interface. The small signal 3 dB bandwidth at −5V of the integrated chip reaches 20 GHz, showing no deterioration compared to a discrete PD.

3

Li Kam Wa, P. "Intermixing of multiple quantum wells for all-optical integrated circuits." Optical and Quantum Electronics 23, no. 7 (January 1991): S925—S939. http://dx.doi.org/10.1007/bf00624982.

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4

Kowsz, Stacy J., Erin C. Young, Benjamin P. Yonkee, Christopher D. Pynn, Robert M. Farrell, James S. Speck, Steven P. DenBaars, and Shuji Nakamura. "Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells." Optics Express 25, no. 4 (February 13, 2017): 3841. http://dx.doi.org/10.1364/oe.25.003841.

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5

Lu, Jen-Hsiang, Kun-Jheng Wu, Kuang-Jou Hsieh, Chieh-Hsiung Kuan, Juei-Yang Feng, Tsong-Sheng Lay, Chen-Wei Yang, and Shun-Li Tu. "A Superlattice Infrared Photodetector Integrated With Multiple Quantum Wells to Improve the Performance." IEEE Journal of Quantum Electronics 43, no. 1 (January 2007): 72–77. http://dx.doi.org/10.1109/jqe.2006.884584.

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6

Feng, Jijun, Ryoichi Akimoto, Shin-ichiro Gozu, Teruo Mozume, Toshifumi Hasama, and Hiroshi Ishikawa. "Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch." Optics Express 21, no. 13 (June 25, 2013): 15840. http://dx.doi.org/10.1364/oe.21.015840.

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7

Новиков, И. И., И. А. Няпшаев, А. Г. Гладышев, В. В. Андрюшкин, А. В. Бабичев, Л. Я. Карачинский, Ю. М. Шерняков та ін. "Влияние состава волноводного слоя на излучательные параметры лазерных гетероструктур InGaAlAs/InP спектрального диапазона 1550 нм". Физика и техника полупроводников 56, № 9 (2022): 933. http://dx.doi.org/10.21883/ftp.2022.09.53418.9892.

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The influence of InGaAlAs waveguide layer composition on the photoluminescence and electroluminescence in the 1550-nm spectral range of heterostructures based on thin strained In0.74Ga0.26As quantum wells has been studied. An approach is proposed that allows based on the analysis of electroluminescence.to carry out a comparative analysis of the deferential gain in fabricated laser diodes. It is shown that decrease of the molar fraction of aluminum in waveguide InGaAlAs layers matched in lattice constant with indium phosphide leads to falling of integrated photoluminescence intensity, however, laser diodes with In0.53Ga0.31Al0.16As waveguide layers demonstrate a higher differential gain compared to laser diodes with In0.53Ga0.27Al0.20As waveguide.

8

Zhang, Yi, Jianfeng Gao, Senbiao Qin, Ming Cheng, Kang Wang, Li Kai, and Junqiang Sun. "Asymmetric Ge/SiGe coupled quantum well modulators." Nanophotonics 10, no. 6 (March 19, 2021): 1765–73. http://dx.doi.org/10.1515/nanoph-2021-0007.

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Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

9

Хабибуллин, Р. А., К. В. Маремьянин, Д. С. Пономарев, Р. Р. Галиев, А. А. Зайцев, А. И. Данилов, И. С. Васильевский та ін. "Квантово-каскадный лазер на 3.3 ТГц на основе активного модуля из трех квантовых ям GaAs/AlGaAs с рабочей температурой >120 K". Физика и техника полупроводников 55, № 11 (2021): 989. http://dx.doi.org/10.21883/ftp.2021.11.51551.46.

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In this work, we have optimized the THz QCL design with an active module based on three GaAs/Al0.18Ga0.82As quantum wells for high-temperature generation at a frequency of about 3.3 THz. A heterostructure based on the developed design with an active region thickness of 10 μm was grown by molecular beam epitaxy with a deviation of the active module thickness from the nominal less than 1%. The fabricated THz QCLs with a double metal waveguide demonstrate lasing up to a temperature of 125 K. Investigations of the I–V characteristics, the dependences of the integrated radiation on the current and the lasing spectra showed good agreement with the calculated characteristics.

10

Shen, Jinyong, Tianyun Zhu, Jing Zhou, Zeshi Chu, Xiansong Ren, Jie Deng, Xu Dai, et al. "High-Discrimination Circular Polarization Detection Based on Dielectric-Metal-Hybrid Chiral Metamirror Integrated Quantum Well Infrared Photodetectors." Sensors 23, no. 1 (December 24, 2022): 168. http://dx.doi.org/10.3390/s23010168.

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Circular polarization detection enables a wide range of applications. With the miniaturization of optoelectronic systems, integrated circular polarization detectors with native sensitivity to the spin state of light have become highly sought after. The key issues with this type of device are its low circular polarization extinction ratios (CPERs) and reduced responsivities. Metallic two-dimensional chiral metamaterials have been integrated with detection materials for filterless circular polarization detection. However, the CPERs of such devices are typically below five, and the light absorption in the detection materials is hardly enhanced and is even sometimes reduced. Here, we propose to sandwich multiple quantum wells between a dielectric two-dimensional chiral metamaterial and a metal grating to obtain both a high CPER and a photoresponse enhancement. The dielectric-metal-hybrid chiral metamirror integrated quantum well infrared photodetector (QWIP) exhibits a CPER as high as 100 in the long wave infrared range, exceeding all reported CPERs for integrated circular polarization detectors. The absorption efficiency of this device reaches 54%, which is 17 times higher than that of a standard 45° edge facet coupled device. The circular polarization discrimination is attributed to the interference between the principle-polarization radiation and the cross-polarization radiation of the chiral structure during multiple reflections and the structure-material double polarization selection. The enhanced absorption efficiency is due to the excitation of a surface plasmon polariton wave. The dielectric-metal-hybrid chiral mirror structure is compatible with QWIP focal plane arrays.

Більше джерел

Дисертації з теми "SOA integrated optics Quantum wells":

1

Yu, Shuqi. "Semiconductor optical amplifiers for future telecom system." Electronic Thesis or Diss., Institut polytechnique de Paris, 2024. http://www.theses.fr/2024IPPAS006.

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L'augmentation continue de la demande de transmission de données contraint les réseaux optiques à évoluer et à améliorer leur capacité de transmission. Comme l'efficacité spectrale des fibres optiques semble avoir atteint sa limite, l'une des meilleures solutions consiste à étendre la largeur de bande spectrale des systèmes optiques. Compte tenu de la demande de systèmes d'amplification optique à large bande passante, nous avons décidé de mener des recherches sur les amplificateurs optiques à semiconducteurs (SOA) car ils offrent un gain personnalisé et une expansion flexible de la bande passante, avec une bonne intégrabilité et un faible coût. Historiquement, les SOA rencontraient des limitations en termes de chiffre de bruit, de distorsions non linéaires et de sensibilité à la polarisation. Cependant, les récents progrès en matière de conception ont montré des résultats prometteurs, positionnant les SOA comme des candidats viables pour les futures solutions de transmission optique. L'objectif de ma thèse est de développer des SOA atténuant ces inconvénients, présentant un faible chiffre de bruit et une puissance de sortie saturée élevée, pour les rendre adaptés à une utilisation dans des réseaux optiques à large bande passante en multiplexage par répartition en longueur d'onde (WDM). Dans ce travail, nous avons commencé par une brève introduction aux principes fondamentaux des SOA. Ensuite, je présente nos conceptions standard, les résultats des mesures et des idées d'amélioration, accompagnés d'un modèle simple pour une optimisation ultérieure. Ensuite, nous exposons quelques conceptions avancées et leurs excellents résultats. Enfin, l'application des SOA dans les systèmes de transmission optique a été explorée, mettant en évidence leur rôle dans les modules d'amplification en ligne.Cette recherche contribue à faire progresser la compréhension et l'application pratique des SOA dans les systèmes de communication optique
The continuous increase in data transmission demands is compelling optical networks to evolve and enhance their transmission capacity. As the spectral efficiency of optical fibers seems to have reached its limit, one of the best solutions is to extend the spectral bandwidth of optical systems. Considering the demand for large-bandwidth optical amplification systems, we decided to research semiconductor optical amplifiers (SOA) as they offer customized gain and flexible bandwidth expansion, which has good integrability and low cost as well. Historically, SOA faced limitations in terms of noise figures, nonlinear distortions, and polarization sensitivity. However, recent advancements in design have shown promising results, positioning SOAs as viable candidates for future optical transmission solutions. The objective of my thesis is to develop SOAs that mitigate the drawbacks, having a low noise figure and high saturation output power, to make them suitable for using in wide-bandwidth wavelength division multiplexing (WDM) optical networks. In this work, we started with a quick introduction to SOA's basic principles. Then, I demonstrate our three standard designs, measurement results, and improvement ideas, accompanied by a simple model for further optimization. After that, we show some advanced designs and their excellent results. In the end, the application of SOAs in optical transmission systems was explored, highlighting their role in in-line amplifier modules. This research contributes to advancing the understanding and practical application of SOAs in optical communication systems

2

May-Arrioja, Daniel. "INTEGRATED INP PHOTONIC SWITCHES." Doctoral diss., University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3288.

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Photonic switches are becoming key components in advanced optical networks because of the large variety of applications that they can perform. One of the key advantages of photonic switches is that they redirect or convert light without having to make any optical to electronic conversions and vice versa, thus allowing networking functions to be lowered into the optical layer. InP-based switches are particularly attractive because of their small size, low electrical power consumption, and compatibility with integration of laser sources, photo-detectors, and electronic components. In this dissertation the development of integrated InP photonic switches using an area-selective zinc diffusion process has been investigated. The zinc diffusion process is implemented using a semi-sealed open-tube diffusion technique. The process has proven to be highly controllable and reproducible by carefully monitoring of the diffusion parameters. Using this technique, isolated p-n junctions exhibiting good I-V characteristics and breakdown voltages greater than 10 V can be selectively defined across a semiconductor wafer. A series of Mach-Zehnder interferometric (MZI) switches/modulators have been designed and fabricated. Monolithic integration of 1x2 and 2x2 MZI switches has been demonstrated. The diffusion process circumvents the need for isolation trenches, and hence optical losses can be significantly reduced. An efficient optical beam steering device based on InGaAsP multiple quantum wells is also demonstrated. The degree of lateral current spreading is easily regulated by controlling the zinc depth, allowing optimization of the injected currents. Beam steering over a 21 microns lateral distance with electrical current values as low as 12.5 mA are demonstrated. Using this principle, a reconfigurable 1x3 switch has been implemented with crosstalk levels better than -17 dB over a 50 nm wavelength range. At these low electrical current levels, uncooled and d.c. bias operation is made feasible. The use of multimode interference (MMI) structures as active devices have also been investigated. These devices operate by selective refractive index perturbation on very specific areas within the MMI structure, and this is again realized using zinc diffusion. Several variants such as a compact MMI modulator that is as short as 350 µm, a robust 2x2 photonic switch and a tunable MMI coupler have been demonstrated.
Ph.D.
Other
Optics and Photonics
Optics

3

Chaisakul, Papichaya. "Ge/SiGe quantum well devices for light modulation, detection, and emission." Phd thesis, Université Paris Sud - Paris XI, 2012. http://tel.archives-ouvertes.fr/tel-00764154.

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This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform. It reports the first development of high speed, low energy Ge/SiGe electro-absorption modulator in a waveguide configuration based on the quantum-confined Stark effect (QCSE), demonstrates the first Ge/SiGe photodiode with high speed performance compatible with 40 Gb/s data transmission, and realizes the first Ge/SiGe light emitting diode based on Ge direct gap transition at room temperature. Extensive DC and RF measurements were performed on each tested prototype, which was realized using the same epitaxial growth and fabrication process. Simple theoretical models were employed to describe experimental properties of the Ge/SiGe MQWs. The studies show that Ge/SiGe MQWs could potentially be employed as a new photonics platform for the development of a high speed optical link fully compatible with silicon technology.

4

Liu, Danyu. "GaAs-based quantum well and quantum dot compact microlasers." Phd thesis, 2012. http://hdl.handle.net/1885/150426.

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The capability to confine and manipulate photons at micro and nano scale opens enormous opportunities to integrate optoelectronic devices, and develop quantum information processing technologies. The most critical issue is to develop new device concepts and technologies that will reliably confine light in a small region via basic physical mechanisms such as photonic bandgap effect, total internal reflection (TIR) and plasmonic propagation. The contents in this thesis are presented along these directions. First of all, a large triangular or square resonator based on TIR can resonate at many distinct wavelengths. It will be shown theoretically and experimentally that the introduction of air trenches to certain positions inside resonator can lead to a single-mode operation. Such trenches will considerably increase the radiation losses of most resonant modes, except for the mode with weak magnetic fields at the trench positions. Since most of the modes are not able to overcome their radiation losses, this high quality (Q) factor mode will be the only mode to reach lasing in the modified structure. On the other hand, microdisks with circular shape and good light confinement can be another candidate for waveguide coupling. Therefore the theoretical coupling of light from a GaAs-based microdisk laser into an in-plane waveguide is also analysed, from air cladding to photonic crystal and metallic claddings. Among them, a properly designed plasmonic layer, introduced beside the waveguide can improve the coupling efficiency close to 80%. However the drawback of using these claddings is either generating additional resonances or requiring the metal deposition, neither of which is very practical. Due to these reasons, a spiral waveguide working both as a waveguide and circular Bragg reflector is designed to be non-evanescently coupled with the microdisk. And after optimisation, 90% coupling efficiency can be reached. In addition such structure is compact and without any additional metal deposition. By adding a taper to this structure, coupling efficiency up to 80% into a slot waveguide can be achieved. These microdisks normally generate many whispering gallery modes (WGMs) with high Q factor. However the Q factors decrease dramatically with the disk size and it is difficult to realise lasing operation in the WGM mode of a small microdisk. In contrast, a well designed square lattice single-defect photonic crystal (PhC) cavity structure with much smaller cavity size can guarantee both WGM modes and a high Q factor (16500) by using the photonic bandgap effect. But one drawback is that it can only operate at a single peak with extremely low output power. In contrast, pseudo-noise sequenced single-defect PhC cavity arrays can produce multi-wavelength lasing with nearly uniform channel spacing and similar Q factors. Moreover due to the higher Q factors and increment in both mode and active volumes, such arrays are able to produce higher output power, but with very little increase in the pumping threshold. Finally fabrication and characterisation of a quantum dot single-defect PhC cavity shows a single peak in the whole gain spectrum which provides strong evidence for future demonstration of multi-wavelength lasing.

Книги з теми "SOA integrated optics Quantum wells":

1

R, Adams Alfred, Europtica-Services I. C, and Society of Photo-optical Instrumentation Engineers., eds. Quantum wells and superlattices in optoelectronic devices and integrated optics: 17-18 November 1987, Cannes, France. Bellingham, Wash., USA: SPIE--the International Society for Optical Engineering, 1987.

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2

Adams, Alfred R. Quantum Wells Superlattices in Optoelectronic Devices and Integrated Optics (Proceedings / SPIE). Society of Photo Optical, 1988.

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Тези доповідей конференцій з теми "SOA integrated optics Quantum wells":

1

Kost, Alan R., Nayer Eradat, Xiaolan Sun, Espen Selvig, Bjorn-Ove Fimland, and David H. Chow. "GaAsSb quantum wells for optoelectronics and integrated optics." In Frontiers in Optics. Washington, D.C.: OSA, 2003. http://dx.doi.org/10.1364/fio.2003.thm4.

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2

Choy, Wallace C. H., Jian Jun He, Ming Li, Yan Feng, and Emil S. Koteles. "InGaAs/InGaAsP diffused quantum wells optical amplifiers and modulators." In Symposium on Integrated Optics, edited by Giancarlo C. Righini and Seppo Honkanen. SPIE, 2001. http://dx.doi.org/10.1117/12.426830.

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3

Miller, D. A. B. "Physics and Applications of Quantum Wells in Optics." In Integrated and Guided Wave Optics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/igwo.1989.waa1.

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Quantum wells are made from alternating thin (e.g. 100 Å) layers of two different semiconductors. These dimensions are so small that physical mechanisms can be engineered on a quantum-mechanical level, either to improve existing physical effects or to create new ones. The topic of the physics of layered semiconductor structures is one of intense current research interest in solid state physics. In optics, we see the consequences in linear and nonlinear optical properties and in electrooptical effects. (For recent reviews, see e.g. Refs. 1-5). Many of these effects are seen under rather practical conditions (e.g. room temperature), and are compatible with laser diode sources and with semiconductor electronics in wavelengths, in power and voltage levels, and in materials and fabrication. Although the quantum well materials are sophisticated structures, an impressive fabrication technology already exists through molecular beam epitaxy and other related semiconductor growth techniques. As a result, many interesting optical devices have been proposed and demonstrated.

4

Qu, Fanyao, N. O. Dantas, and P. C. Morais. "Anomalous shift of the recombination energy in single asymmetric quantum wells." In Symposium on Integrated Optics, edited by Yasuhiko Arakawa, Peter Blood, and Marek Osinski. SPIE, 2001. http://dx.doi.org/10.1117/12.432619.

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5

Pogossian, Souren P., Adrian P. Vonsovici, and Lili Vescan. "(SiGe/Si) n /Si quantum wells for enhanced spontaneous emission LEDs." In Symposium on Integrated Optics, edited by David J. Robbins, John A. Trezza, and Ghassan E. Jabbour. SPIE, 2001. http://dx.doi.org/10.1117/12.426923.

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6

Miyamoto, Tomoyuki, T. Kageyama, S. Makino, Yoshihiko Ikenaga, Fumio Koyama, and Kenichi Iga. "CBE growth of GaInNAs quantum wells and dots for long-wavelength lasers." In Symposium on Integrated Optics, edited by Yasuhiko Arakawa, Peter Blood, and Marek Osinski. SPIE, 2001. http://dx.doi.org/10.1117/12.432570.

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7

Wu, Bing-Ruey, Ching-Fuh Lin, Lih-Wen Laih, and Tien-Tsorng Shih. "Extremely broadband superluminescent diodes/semiconductor laser amplifiers using nonidentical InGaAsP quantum wells." In Symposium on Integrated Optics, edited by Suning Tang and Yao Li. SPIE, 2001. http://dx.doi.org/10.1117/12.428027.

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8

Wen, Tzu-Chi, Shih-Chang Lee, and Wei-I. Lee. "Influence of barrier growth temperature on the properties of InGaN/GaN quantum wells." In Symposium on Integrated Optics, edited by H. Walter Yao and E. F. Schubert. SPIE, 2001. http://dx.doi.org/10.1117/12.426844.

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9

Sun, Handong, Takayuki Makino, Tien T. Nguyen, Yusaburo Segawa, ZiKang Tang, George K. Wong, Masashi Kawasaki, Akira Ohtomo, Kentaro Tamura, and Hideomi Koinuma. "Optically pumped stimulated emission in ZnO/ZnMgO multiple quantum wells prepared by combinatorial techniques." In Symposium on Integrated Optics, edited by Ghassan E. Jabbour and Hideomi Koinuma. SPIE, 2001. http://dx.doi.org/10.1117/12.424747.

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10

Koren, U., G. Eisenstein, R. S. Tucker, T. L. Koch, and B. I. Miller. "Integrated Multiple Quantum Well Lasers and Optical Amplifiers at 1.55 Micron Wavelength." In Quantum Wells for Optics and Opto-Electronics. Washington, D.C.: Optica Publishing Group, 1989. http://dx.doi.org/10.1364/qwoe.1989.tuc2.

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Анотація:

Photonic integrated circuits (PIC's) can be composed of many active waveguide elements such as lasers, detectors, optical modulators and switches, optical amplifiers etc. These elements can be optically coupled via a complex branching network of low loss passive waveguides all on the same semiconductor chip. Some of the more obvious advantages of this technology are the compact, stable and efficient couplings that can be obtained between the various optical elements of the PIC, and also the potential extensive use of optical amplifiers inside the PIC to compensate for undesirable optical losses that may occur inside the optical circuit or at the outside world. It is possible to use optical amplifiers as switching elements in combination with optical power combiners or splitters in a complex waveguide optical switching circuits. This opens the possibility of creating switching PIC's with switching speeds higher than 1 GHz and with inherent optical gain available in the actual switches.