Статті в журналах з теми "Smat Power IC"
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Wong, King-Yuen, Wanjun Chen, Xiaosen Liu, Chunhua Zhou, and Kevin J. Chen. "GaN smart power IC technology." physica status solidi (b) 247, no. 7 (June 23, 2010): 1732–34. http://dx.doi.org/10.1002/pssb.200983453.
Повний текст джерелаXu, H., H. J. Kim, H. Kim, and W. S. Chung. "Small signal modelling of Smart power IC." Electronics Letters 43, no. 21 (2007): 1142. http://dx.doi.org/10.1049/el:20071848.
Повний текст джерелаPetrosyants, Konstantin O., Igor A. Kharitonov, and Nikita I. Ryabov. "Electro-Thermal Design of Smart Power Devices and Integrated Circuits." Advanced Materials Research 918 (April 2014): 191–94. http://dx.doi.org/10.4028/www.scientific.net/amr.918.191.
Повний текст джерелаFloros, George, and Athanasios Tziouvaras. "Special Issue “Smart IC Design and Sensing Technologies”." Chips 1, no. 3 (October 20, 2022): 172–74. http://dx.doi.org/10.3390/chips1030011.
Повний текст джерелаNg, Wai Tung, Florin Udrea, Ichiro Omura, Jan Vobecky, and Don Disney. "Guest Editorial Special Issue on Power Semiconductor Devices and Smart Power IC Technologies." IEEE Transactions on Electron Devices 64, no. 3 (March 2017): 654–58. http://dx.doi.org/10.1109/ted.2017.2661578.
Повний текст джерелаChan, Chi-Hang, Lin Cheng, Wei Deng, Peng Feng, Li Geng, Mo Huang, Haikun Jia, et al. "Trending IC design directions in 2022." Journal of Semiconductors 43, no. 7 (July 1, 2022): 071401. http://dx.doi.org/10.1088/1674-4926/43/7/071401.
Повний текст джерелаGleim, G., L. Bertolini, and F. Heizmann. "Combined smart power IC for VCR with PWM controlled motor voltage." IEEE Transactions on Consumer Electronics 40, no. 3 (1994): 377–86. http://dx.doi.org/10.1109/30.320818.
Повний текст джерелаHai Xu, Hee-Jun Kim, and Hoon Kim. "A Direct Measurement Method of Frequency Responses of the Smart Power IC." IEEE Transactions on Instrumentation and Measurement 59, no. 3 (March 2010): 682–86. http://dx.doi.org/10.1109/tim.2009.2025985.
Повний текст джерелаSankin, Igor, V. Bondarenko, Robin L. Kelley, and Jeff B. Casady. "SiC Smart Power JFET Technology for High-Temperature Applications." Materials Science Forum 527-529 (October 2006): 1207–10. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1207.
Повний текст джерелаZhang, Wei Jia, Jingshu Yu, Wen Tao Cui, Yahui Leng, Jingyuan Liang, Yuan-Ta Hsieh, Hann-Huei Tsai, Ying-Zong Juang, Wen-Kuan Yeh, and Wai Tung Ng. "A Smart Gate Driver IC for GaN Power HEMTs With Dynamic Ringing Suppression." IEEE Transactions on Power Electronics 36, no. 12 (December 2021): 14119–32. http://dx.doi.org/10.1109/tpel.2021.3089679.
Повний текст джерелаKwan, Alex Man Ho, Yue Guan, Xiaosen Liu, and Kevin J. Chen. "A Highly Linear Integrated Temperature Sensor on a GaN Smart Power IC Platform." IEEE Transactions on Electron Devices 61, no. 8 (August 2014): 2970–76. http://dx.doi.org/10.1109/ted.2014.2327386.
Повний текст джерелаZhang, Z., Y. Tsuchiya, O. Akiyama, and H. Konno. "An Ultra Low-Power MR*1) Sensor for a Smart Water Meter or a Smart Gas Meter." Key Engineering Materials 543 (March 2013): 418–21. http://dx.doi.org/10.4028/www.scientific.net/kem.543.418.
Повний текст джерелаFilios, Gabriel, Ioannis Katsidimas, Sotiris Nikoletseas, and Ioannis Tsenempis. "A Smart Energy Harvesting Platform for Wireless Sensor Network Applications." Information 10, no. 11 (November 6, 2019): 345. http://dx.doi.org/10.3390/info10110345.
Повний текст джерелаParimalam, L., and R. Rajeswari. "Efficient Optimization and Placement using Enhanced GHB-IC Approach in Smart Power grid System." Asian Journal of Research in Social Sciences and Humanities 6, no. 10 (2016): 246. http://dx.doi.org/10.5958/2249-7315.2016.01011.x.
Повний текст джерелаHardas, Mrs Vedanti, Sagar Ingole, Sahil Sheikh, and Sagar Kale. "Solar Panel Monitoring System Using IOT." International Journal for Research in Applied Science and Engineering Technology 10, no. 5 (May 31, 2022): 935–38. http://dx.doi.org/10.22214/ijraset.2022.42133.
Повний текст джерелаWu, Yu Chi, Meng Jen Chen, Fu Hsiang Chi, Jin Yuan Lin, and Chao Shu Chang. "Digital Power Meter with Demand Control for Residential Energy Management." Advanced Materials Research 562-564 (August 2012): 1767–71. http://dx.doi.org/10.4028/www.scientific.net/amr.562-564.1767.
Повний текст джерелаZhu, R., V. Khemka, A. Bose, and T. Roggenbauer. "Substrate Majority Carrier-Induced NLDMOSFET Failure and Its Prevention in Advanced Smart Power IC Technologies." IEEE Transactions on Device and Materials Reliability 6, no. 3 (September 2006): 386–92. http://dx.doi.org/10.1109/tdmr.2006.882198.
Повний текст джерелаJiang, Qimeng, Zhikai Tang, Chunhua Zhou, Shu Yang, and Kevin J. Chen. "Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform." IEEE Transactions on Electron Devices 61, no. 11 (November 2014): 3808–13. http://dx.doi.org/10.1109/ted.2014.2355834.
Повний текст джерелаChu, Min, Jie Chen, Abidur Rahman, and Rajen Murugan. "Methodology to Quantify Impact of Package Delamination on Performance of High-Side Smart Power Switch Design." International Symposium on Microelectronics 2020, no. 1 (September 1, 2020): 000015–20. http://dx.doi.org/10.4071/2380-4505-2020.1.000015.
Повний текст джерелаBimbi, Cesare, Salvatore Pennisi, Salvatore Privitera, and Francesco Pulvirenti. "Single-Branch Wide-Swing-Cascode Subthreshold GaN Monolithic Voltage Reference." Electronics 11, no. 12 (June 9, 2022): 1840. http://dx.doi.org/10.3390/electronics11121840.
Повний текст джерелаJohan, Arief Prima, and Anom Yusuf. "Counterproductive work behavior, job stress, trait emotional intelligence and person organization fit among employees of leasing industry in Indonesia." Intangible Capital 18, no. 2 (July 11, 2022): 233. http://dx.doi.org/10.3926/ic.1318.
Повний текст джерелаRasheed, Israa Mohammed, and Hassan Jasim Motlak. "Performance parameters optimization of CMOS analog signal processing circuits based on smart algorithms." Bulletin of Electrical Engineering and Informatics 12, no. 1 (February 1, 2023): 149–57. http://dx.doi.org/10.11591/eei.v12i1.4128.
Повний текст джерелаJia, Li-Fang, Lian Zhang, Jin-Ping Xiao, Zhe Cheng, De-Feng Lin, Yu-Jie Ai, Jin-Chao Zhao, and Yun Zhang. "E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology." Micromachines 12, no. 6 (May 27, 2021): 617. http://dx.doi.org/10.3390/mi12060617.
Повний текст джерелаMohri, Kaneo, Tsuyoshi Uchiyama, Larissa V. Panina, Michiharu Yamamoto, and Kenichi Bushida. "Recent Advances of Amorphous Wire CMOS IC Magneto-Impedance Sensors: Innovative High-Performance Micromagnetic Sensor Chip." Journal of Sensors 2015 (2015): 1–8. http://dx.doi.org/10.1155/2015/718069.
Повний текст джерелаNasrullah, Jawad, Zhiquan Luo, and Greg Taylor. "Designing Software Configurable Chips and SIPs using Chiplets and zGlue." International Symposium on Microelectronics 2019, no. 1 (October 1, 2019): 000027–32. http://dx.doi.org/10.4071/2380-4505-2019.1.000027.
Повний текст джерелаZhang, Fan. "Development of a Smart Cabinet Lock Based on Finger Vein Technology." Scientific and Social Research 4, no. 2 (February 17, 2022): 111–26. http://dx.doi.org/10.26689/ssr.v4i2.3648.
Повний текст джерелаYang, Chih Kuang. "System on film type substrates: processes, structure and real modules." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000031–34. http://dx.doi.org/10.4071/isom-2015-tp16.
Повний текст джерелаJia, Zhou, Tong Ge, Linfei Guo, Ng Pei Jian Eileen, Huiqiao He, and Joseph Chang. "A High Power Driver IC for Electroluminescent Panel: Design Challenges and Advantages of using the Emerging LEES-SMART GaN-on-CMOS process." Procedia Engineering 141 (2016): 91–93. http://dx.doi.org/10.1016/j.proeng.2015.09.227.
Повний текст джерелаBryzek, Janusz. "MEMS Tornado to Challenge Next Generation Packaging." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (January 1, 2012): 000417–56. http://dx.doi.org/10.4071/2012dpc-keynote_mems_fairchildsemi.
Повний текст джерелаBiswas, Tathagato. "Spy Robot." International Journal for Research in Applied Science and Engineering Technology 10, no. 6 (June 30, 2022): 4265–69. http://dx.doi.org/10.22214/ijraset.2022.44887.
Повний текст джерелаEt. al., Srilakshmi Kaza,. "Performance Analysis of Adiabatic Vedic Multipliers." Turkish Journal of Computer and Mathematics Education (TURCOMAT) 12, no. 5 (April 11, 2021): 1429–35. http://dx.doi.org/10.17762/turcomat.v12i5.2039.
Повний текст джерелаYin, Mulin. "Research on Behavior Monitoring of Elderly Living Alone Based on Wearable Devices and Sensing Technology." International Journal of Antennas and Propagation 2021 (October 15, 2021): 1–10. http://dx.doi.org/10.1155/2021/4200137.
Повний текст джерелаHanifi, Gulhabib, and Noor Mohammad Azizi. "Study of the Strategy of Energy Harvester Pattern Besides the Influence Preparing Journey." Integrated Journal for Research in Arts and Humanities 3, no. 1 (January 26, 2023): 89–95. http://dx.doi.org/10.55544/ijrah.3.1.15.
Повний текст джерелаWei, Yifan, Yuan Yao, Kang Pang, Chaojie Xu, Xuebing Han, Languang Lu, Yalun Li, et al. "A Comprehensive Study of Degradation Characteristics and Mechanisms of Commercial Li(NiMnCo)O2 EV Batteries under Vehicle-To-Grid (V2G) Services." Batteries 8, no. 10 (October 17, 2022): 188. http://dx.doi.org/10.3390/batteries8100188.
Повний текст джерелаGalang Yudha Murih Raharja and Padjar Setyobudi. "RANCANG BANGUN SISTEM KEAMANAN SEPEDA MOTOR MENGGUNAKAN RFID DAN PERSONAL IDENTIFICATION NUMBER (PIN) BERBASIS MIKROKONTROLER ATMEGA16." Elkom : Jurnal Elektronika dan Komputer 12, no. 1 (July 16, 2019): 6–12. http://dx.doi.org/10.51903/elkom.v12i1.104.
Повний текст джерела"Power Semiconductor Devices and Smart Power IC Technologies." IEEE Journal of Photovoltaics 6, no. 3 (May 2016): 791. http://dx.doi.org/10.1109/jphotov.2016.2551080.
Повний текст джерела"Power Semiconductor Devices and Smart Power IC Technologies." IEEE Journal of Photovoltaics 6, no. 4 (July 2016): 1055. http://dx.doi.org/10.1109/jphotov.2016.2579378.
Повний текст джерела"Power Semiconductor Devices and Smart Power IC Technologies." IEEE Journal of Photovoltaics 6, no. 5 (September 2016): 1391. http://dx.doi.org/10.1109/jphotov.2016.2598291.
Повний текст джерела"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Journal of the Electron Devices Society 4, no. 3 (May 2016): 168. http://dx.doi.org/10.1109/jeds.2016.2545959.
Повний текст джерела"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Journal of the Electron Devices Society 4, no. 4 (July 2016): 198. http://dx.doi.org/10.1109/jeds.2016.2578502.
Повний текст джерела"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Journal of the Electron Devices Society 4, no. 5 (September 2016): 374. http://dx.doi.org/10.1109/jeds.2016.2594098.
Повний текст джерела"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Transactions on Electron Devices 63, no. 5 (May 2016): 2227. http://dx.doi.org/10.1109/ted.2016.2546844.
Повний текст джерела"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Transactions on Electron Devices 63, no. 6 (June 2016): 2631. http://dx.doi.org/10.1109/ted.2016.2566699.
Повний текст джерела"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Transactions on Electron Devices 63, no. 7 (July 2016): 2981. http://dx.doi.org/10.1109/ted.2016.2574400.
Повний текст джерела"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Transactions on Electron Devices 63, no. 8 (August 2016): 3365. http://dx.doi.org/10.1109/ted.2016.2586906.
Повний текст джерела"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Transactions on Electron Devices 63, no. 9 (September 2016): 3813. http://dx.doi.org/10.1109/ted.2016.2598234.
Повний текст джерела"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Transactions on Semiconductor Manufacturing 29, no. 2 (May 2016): 176. http://dx.doi.org/10.1109/tsm.2016.2545898.
Повний текст джерела"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Transactions on Semiconductor Manufacturing 29, no. 3 (August 2016): 270. http://dx.doi.org/10.1109/tsm.2016.2594153.
Повний текст джерела"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Electron Device Letters 37, no. 5 (May 2016): 693. http://dx.doi.org/10.1109/led.2016.2553799.
Повний текст джерела"Power Semiconductor Devices and Smart Power IC Technologies CFP." IEEE Electron Device Letters 37, no. 6 (June 2016): 816. http://dx.doi.org/10.1109/led.2016.2564558.
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