Дисертації з теми "Single electron devices"
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Scholze, Andreas. "Simulation of single-electron devices /." Zürich, 2000. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=13526.
Повний текст джерелаWasshuber, Christoph. "About single-electron devices and circuits /." Wien : Österr. Kunst- und Kulturverl, 1998. http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&doc_number=008183172&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA.
Повний текст джерелаHe, J. "Few-electron transfer devices for single-electron logic applications." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.603913.
Повний текст джерелаPooley, David Martin. "Vertical silicon single-electron devices with silicon nitride tunnel barriers." Thesis, University of Cambridge, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.621302.
Повний текст джерелаAlkhalil, Feras. "Development of novel fabrication technology for SOI single electron transfer devices." Thesis, University of Southampton, 2013. https://eprints.soton.ac.uk/360500/.
Повний текст джерелаCarroll, Natalie R. Sohlberg Karl William Dr. "Theoretical descriptions of electron transport through single molecules: developing design tools for molecular electronic devices /." Philadelphia, Pa. : Drexel University, 2004. http://dspace.library.drexel.edu/handle/1860/330.
Повний текст джерелаChu, Rongming. "AlGaN-GaN single- and double-channel high electron mobility transistors /." View abstract or full-text, 2004. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202004%20CHU.
Повний текст джерелаIncludes bibliographical references (leaves 74-82). Also available in electronic version. Access restricted to campus users.
Rajagopal, Senthil Arun. "SINGLE MOLECULE ELECTRONICS AND NANOFABRICATION OF MOLECULAR ELECTRONIC DEVICES." Miami University / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=miami1155330219.
Повний текст джерелаNicol, Robert Leiper. "Fabrication and characterization of ultra-small tunnel junctions for single electron devices." Thesis, University of Glasgow, 1997. http://theses.gla.ac.uk/5365/.
Повний текст джерелаKleinschmidt, Peter. "Applications of single-electron devices in electrical metrology and far-Infrared detection." Thesis, Royal Holloway, University of London, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.444545.
Повний текст джерелаRobinson, Andrew Malcolm. "Dynamics and noise in surface-acoustic-wave-based single-electron- transport devices." Thesis, University of Cambridge, 2002. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.620234.
Повний текст джерелаRomero, Javier. "Electronic transport and correlations in single magnetic molecule devices." Doctoral diss., University of Central Florida, 2014. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/6348.
Повний текст джерелаPh.D.
Doctorate
Physics
Sciences
Physics
Kim, Jong Un. "Error rate and power dissipation in nano-logic devices." Thesis, Texas A&M University, 2003. http://hdl.handle.net/1969.1/2224.
Повний текст джерелаHerrmann, Oliver [Verfasser], Laurens W. [Gutachter] Molenkamp, and Matthias [Gutachter] Bode. "Graphene-based single-electron and hybrid devices, their lithography, and their transport properties / Oliver Herrmann ; Gutachter: Laurens W. Molenkamp, Matthias Bode." Würzburg : Universität Würzburg, 2017. http://d-nb.info/1130587924/34.
Повний текст джерелаDittmann, Niklas [Verfasser], Nicole Akademischer Betreuer] Helbig, Janine [Akademischer Betreuer] Splettstößer, and Volker [Akademischer Betreuer] [Meden. "Dynamics and fluctuations in single-electron tunneling devices : analytical and numerical methods for time-dependent quantum transport in interacting nanosystems / Niklas Dittmann ; Nicole Helbig, Janine Splettstößer, Volker Meden." Aachen : Universitätsbibliothek der RWTH Aachen, 2018. http://d-nb.info/1189672197/34.
Повний текст джерелаAlecce, Antonio. "Selected problems in quantum mechanics: towards topological quantum devices and heat engine." Doctoral thesis, Università degli studi di Padova, 2017. http://hdl.handle.net/11577/3421931.
Повний текст джерелаIl lavoro presentato in questa tesi tratta principalmente due argomenti quali le termodinamica quantistica e l'ordine topologico. Nel primo caso fisici stanno provando a costruire una teoria capace to descrivere abbastanza in generale gli scambi di calore ed energia in sistemi quantistici. Il secondo argomento, invece, si relaziona a fenomini e stati della meteria esotici come l'effetto "fractional quantum hall" o gli isolanti e superconduttori topologici. Nella prima parte della tesi definiamo la dinamica quantistica per un sistema chiuso ed aperto. Questo é fondamentale per trattare il campo della termodinamica quantistica. Poi, dopo una parte introduttiva sulle trasformazioni termodinamiche quantistiche, ci si sposta verso il campo delle relazioni di fluttuazione non all'equilibrio. Viene trattato il problema dell'irreversibilità tanto nella meccanica classica quanto in quella quantistica. Qui presentiamo uno dei nostri maggiori risultati. Caratterizziamo un'evoluzione adiabatica "termodinamica" irreversibile di un sistema quantistico il cui stato iniziale é uno di equilibrio alla temperatura inversa iniziale ßi. Viene ricavato l'incremento di entropia termodinamica del processo. Come applicazione diretta del risultato precedente si é considerato un ciclo Otto quantistico (QOC). Abbiamo notato che l'aumentare del carattere irreversibile dell'evoluzione inficia le principali figure di merito del ciclo. La seconda parte della tisi, invece, guarda al campo dell'ordine topologico. All'inizio introduciamo i concetti di ordine, classi ed invarianti topologici. Poi introduciamo il ben noto modello di Kitaev per superconduttori 1 D. Questo modello prevede "Majorana zero mode" (MZM) ai capi del filo (il sistema 1 D). I Majorana zero modes sono stati topologici che mostrano una grande resistenza contro il disordine, perurbazioni locali e ogni genere di elemento dissipativo. In viene considerata una generalizzazione del modello di Kitaev con interazioni a molti vicini. Vengono ricavati diagrammi di fase topologica molto "ricchi" che mostrano la presenza di molti MZM per lato. Inoltre si studia l'apparire e scomparire di tali modi a seconda della simmetria di inversione temporale, che é fondamentale per lo studio della fase topologica. I diagrammi di fase mostrano anche la presenza di massive edge modes. In questo ultimo caso gli invarianti topologici non descrivono bene tutte le transizioni. In fine ci siamo focalizzati sul caso limite dove gli MZM sono ottenuti quando il sistema ha una lunghezza finita. Tali casi sono molto interressanti visto il grande vantaggio che possiamo ricavarne in un setup sperimentale dato che il sistema può grandezza ridotta. L'ultima parte é sui dispositivi single electron tunneling. Qui abbiamo descritto la differente capacità a lavorare come "heat-to-current harvester" per un dispositivo che usa quantum dots rispetto ad uno analogo che usa metallic dots. Questi argomenti differenti trovano un punto di unione considerando lavori scientifici recenti in cui si considera trasporto di calore su dispositivi "single electron tuunneling" in cui alcune delle componenti circuitali dei dispositivi mostrano una natura topologica. Sono sistemi perfetti dai quali possiamo ottenere nuovi fenomeni di trasporto.
Ruess, Frank Joachim Physics Faculty of Science UNSW. "Atomically controlled device fabrication using STM." Awarded by:University of New South Wales. Physics, 2006. http://handle.unsw.edu.au/1959.4/24855.
Повний текст джерелаEsmail, Adam Ashiq. "Charge dynamics in superconducting double dots." Thesis, University of Cambridge, 2017. https://www.repository.cam.ac.uk/handle/1810/270018.
Повний текст джерелаZhang, Yong. "A single-pulse cycloconverter induction motor drive." Thesis, University of Sussex, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.260012.
Повний текст джерелаGao, Yuanfang. "Microfabricated devices for single cell analysis." Diss., Columbia, Mo. : University of Missouri-Columbia, 2006. http://hdl.handle.net/10355/4429.
Повний текст джерелаThe entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on May 1, 2009) Vita. Includes bibliographical references.
Yang, Yang. "Electronic devices based on individual single wall carbon nanotubes." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708116.
Повний текст джерелаHopfensperger, Bernhard. "Field oriented control of single and cascaded doubly-fed induction machines." Thesis, University of Newcastle Upon Tyne, 1998. http://hdl.handle.net/10443/514.
Повний текст джерелаHu, Gongfan. "Computer aided analysis and design of a single phase induction actuator." Thesis, University of Dundee, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.334764.
Повний текст джерелаFERRARIO, ALBERTO. "Atmospheric neutron induced soft errors on electronic devices." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2012. http://hdl.handle.net/10281/28334.
Повний текст джерелаWu, Yimin A. "Towards large area single crystalline two dimensional atomic crystals for nanotechnology applications." Thesis, University of Oxford, 2012. http://ora.ox.ac.uk/objects/uuid:bdb827e5-f3fd-4806-8085-0206e67c7144.
Повний текст джерелаBrown, Daniel F. Jr. "Single crystal piezoelectric pumping using displacement amplification." Thesis, Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/19124.
Повний текст джерелаTeh, Aun Shih. "In-situ synthesis of single wall carbon nanotubes for electronic devices." Thesis, University of Cambridge, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.612322.
Повний текст джерелаJohnson, Nigel Christopher. "All-optical regenerative memory using a single device." Thesis, Aston University, 2009. http://publications.aston.ac.uk/15331/.
Повний текст джерелаSchulze, Gunnar [Verfasser]. "Elementary processes in single molecule devices : electronic transport and molecular isomerization / Gunnar Schulze." Berlin : Freie Universität Berlin, 2010. http://d-nb.info/102433547X/34.
Повний текст джерелаBadada, Bekele H. "Probing Electronic Band Structure and Quantum Confined States in Single Semiconductor Nanowire Devices." University of Cincinnati / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1470043382.
Повний текст джерелаKim, Sung Soo. "Single-walled carbon nanotube electrodes for all-plastic, electronic device applications." Thesis, Imperial College London, 2010. http://hdl.handle.net/10044/1/6453.
Повний текст джерелаAl-Khaykanee, Mohsin. "Quantum theory of electronic and thermal transport through nano-scale and single-molecule devices." Thesis, Lancaster University, 2018. http://eprints.lancs.ac.uk/90161/.
Повний текст джерелаNeri, Lorenzo. "Time Resolved Single Photon Imaging Device with Single Photon Avalanche Diode." Thesis, Università degli Studi di Catania, 2011. http://hdl.handle.net/10761/183.
Повний текст джерелаAbbiamo studiato un nuovo sensore ottico caratterizzato da prestazioni che estenderanno le funzionalita' di molte nuove tecniche di indagine fisica. Il nostro dispositivo si basa su una matrice bidimensionale di Single Photon Avalanche Diode (SPAD), in grado di fornire il tempo di arrivo di ogni singolo fotone con una precisione del decimo di nanosecondo. Il nostro apparato e' in grado di acquisire là ¢ arrivo dei fotoni con continuita', senza interruzioni dovute al processo di lettura, ed e' inoltre resistente a fonti di luce eccessiva che costituiscono una limitazione per i normali dispositivi a singolo fotone. La soluzione proposta costituisce un passo in avanti per tutte le analisi basate sulla correlazione temporale a singolo fotone, come la Fluorescence Lifetime Imaging Microscopy, Dynamic Light Scattering, 3D Camera, Particle Imaging Velocimetry e Adaptive Optics. Grazie allo studio delle caratteristiche elettriche del singolo SPAD e' stato possibile individuare varie strategie di lettura. Il modello elettrico sviluppato e' stato inoltre utilizzato per simulare diverse configurazioni elettriche della matrici bidimensionali di sensori. Abbiamo studiato le caratteristiche funzionali del singolo SPAD ponendo l'attenzione sui fenomeni che alterano la linearita' di ri-sposta, siamo stati cosi' in grado di estendere di quattro ordini di grandezza il suo intervallo di utilizzo, e di utilizzare la saturazione come una funzione di compressione dei dati prodotti dal sensore. Le equazioni presentate estendono la correzione degli effetti del tempo morto, gia' presenti in letteratura, dallà ¢ analisi del caso stazionario a quello delle sorgenti variabili nel tempo, e sono inoltre estendibili a qualunque configurazione di tempo morto. La produzione di un prototipo funzionante ha compreso inoltre la realizzazione dell'elettronica di acquisizione, dell'algoritmo di calibrazione del sensore e di ricostruzione delle immagini. Il dispositivo e' stato testato realizzando diversi esperimenti, che hanno permesso di valutare le caratteristiche e i limiti delle soluzioni tecnologiche adottate.
Sutanto, Bintoro Jemmy. "An Electromagnetic Actuated Microvalve Fabricated on a Single Wafer." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/4891.
Повний текст джерелаGabrysch, Markus. "Charge Transport in Single-crystalline CVD Diamond." Doctoral thesis, Uppsala universitet, Elektricitetslära, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-122794.
Повний текст джерелаAlberts, Stefan Francois. "Real-time Software Hand Pose Recognition using Single View Depth Images." Thesis, Stellenbosch : Stellenbosch University, 2014. http://hdl.handle.net/10019.1/86442.
Повний текст джерелаENGLISH ABSTRACT: The fairly recent introduction of low-cost depth sensors such as Microsoft’s Xbox Kinect has encouraged a large amount of research on the use of depth sensors for many common Computer Vision problems. Depth images are advantageous over normal colour images because of how easily objects in a scene can be segregated in real-time. Microsoft used the depth images from the Kinect to successfully separate multiple users and track various larger body joints, but has difficulty tracking smaller joints such as those of the fingers. This is a result of the low resolution and noisy nature of the depth images produced by the Kinect. The objective of this project is to use the depth images produced by the Kinect to remotely track the user’s hands and to recognise the static hand poses in real-time. Such a system would make it possible to control an electronic device from a distance without the use of a remote control. It can be used to control computer systems during computer aided presentations, translate sign language and to provide more hygienic control devices in clean rooms such as operating theatres and electronic laboratories. The proposed system uses the open-source OpenNI framework to retrieve the depth images from the Kinect and to track the user’s hands. Random Decision Forests are trained using computer generated depth images of various hand poses and used to classify the hand regions from a depth image. The region images are processed using a Mean-Shift based joint estimator to find the 3D joint coordinates. These coordinates are finally used to classify the static hand pose using a Support Vector Machine trained using the libSVM library. The system achieves a final accuracy of 95.61% when tested against synthetic data and 81.35% when tested against real world data.
AFRIKAANSE OPSOMMING: Die onlangse bekendstelling van lae-koste diepte sensors soos Microsoft se Xbox Kinect het groot belangstelling opgewek in navorsing oor die gebruik van die diepte sensors vir algemene Rekenaarvisie probleme. Diepte beelde maak dit baie eenvoudig om intyds verskillende voorwerpe in ’n toneel van mekaar te skei. Microsoft het diepte beelde van die Kinect gebruik om verskeie persone en hul ledemate suksesvol te volg. Dit kan egter nie kleiner ledemate soos die vingers volg nie as gevolg van die lae resolusie en voorkoms van geraas in die beelde. Die doel van hierdie projek is om die diepte beelde (verkry vanaf die Kinect) te gebruik om intyds ’n gebruiker se hande te volg oor ’n afstand en die statiese handgebare te herken. So ’n stelsel sal dit moontlik maak om elektroniese toestelle oor ’n afstand te kan beheer sonder die gebruik van ’n afstandsbeheerder. Dit kan gebruik word om rekenaarstelsels te beheer gedurende rekenaargesteunde aanbiedings, vir die vertaling van vingertaal en kan ook gebruik word as higiëniese, tasvrye beheer toestelle in skoonkamers soos operasieteaters en elektroniese laboratoriums. Die voorgestelde stelsel maak gebruik van die oopbron OpenNI raamwerk om die diepte beelde vanaf die Kinect te lees en die gebruiker se hande te volg. Lukrake Besluitnemingswoude ("Random Decision Forests") is opgelei met behulp van rekenaar gegenereerde diepte beelde van verskeie handgebare en word gebruik om die verskeie handdele vanaf ’n diepte beeld te klassifiseer. Die 3D koördinate van die hand ledemate word dan verkry deur gebruik te maak van ’n Gemiddelde-Afset gebaseerde ledemaat herkenner. Hierdie koördinate word dan gebruik om die statiese handgebaar te klassifiseer met behulp van ’n Steun-Vektor Masjien ("Support Vector Machine"), opgelei met behulp van die libSVM biblioteek. Die stelsel behaal ’n finale akkuraatheid van 95.61% wanneer dit getoets word teen sintetiese data en 81.35% wanneer getoets word teen werklike data.
Llobet, Sixto Jordi. "Focused ion beam implantation as a tool for the fabrication of nano electromechanical devices." Doctoral thesis, Universitat Autònoma de Barcelona, 2016. http://hdl.handle.net/10803/384934.
Повний текст джерелаThe thesis entitled “Focused ion beam implantation as a tool for the fabrication of nano electromechanical devices” aboard the challenge of the fabrication of nanometric resonators from a new approach based on ion implantation by a focused ion beam (FIB) . This new method allows the fabrication of functional suspended nanodevices, from the electrical and mechanical point of view, without using any resist. This method is i) fast and simple, where only three steps are needed; ii) flexible, it is feasible the definition of structures of different shape; iii) high resolution, it is demonstrated the fabrication of 4 μm length and 10 nm diameter suspended devices; iv) reproducible and v) CMOS compatible. The starting point is a silicon or SOI (silicon – silicon dioxide – silicon) chip. The fabrication approach starts with a FIB implantation process where the structures and the electrical connections of the device are defined. The second step consists on silicon wet etching, where silicon that is not protected by the FIB implantation is etched, allowing the release of the devices. The defined structures are made of amorphous silicon, they contains gallium and they are not functional electrically (ρ ~1 Ω·m). The last step consists on diffusive boron doping at high temperature (up to 1000ºC) in a boron environment, where it is promoted the recrystallization of silicon forming nanocrystals, the boron doping (p type) of silicon and the removal of gallium. In this last step at high temperature the structures are not oxidized obtaining electrically functional devices (ρ ~10-4 Ω·m). The principal results can be classified in three areas: Investigation of the effect of gallium ion implantation onto silicon from the process and nanoelectromechanical material properties point of view. In this work the material structure in the different fabrication steps has been characterized, as well as the electrical and electromechanical properties of the final devices obtained by the described method. Development and optimization of the fabrication process, especially controlling the dimensions and the combination with other fabrication processes. The work done in the optimization of the different fabrication parameters are shown, from the tuning of the ion dosage to the etching selectivity. It is possible to stablish design strategies to control and minimize the under-etching effects onto silicon, as well as to avoid the collapse of long structures, that are the result of the superficial sticking produced during the wet etching processes, by the fabrication of sustaining posts. That method permits to obtain customized devices. It is a versatile prototyping method that allows the fabrication of small batches of devices of nanometric dimensions that can be employed for the scientific and academic experimentation. Investigation of the electronical, mechanical and electromechanical properties of the devices, specifically suspended silicon nanowires that can be employed as high frequency mechanical resonators or single hole transistors. We fabricated resonators of different geometries for the study and demonstration of the relation between the geometrical symmetry/asymmetry of the devices and the piezoresistive signal measured during the electromechanical transduction. We investigated and fabricated ultra-thin field effect transistors (10 ~ 15 nm) and suspended transistors that exhibits Coulomb blockade electrical characteristics at low temperature thanks to the nanocrystals that are grown during the high temperature fabrication step.
Hillig, Mark Alexander. "Automated Channel Assessment for Single Chip MedRadio Transceivers." PDXScholar, 2013. https://pdxscholar.library.pdx.edu/open_access_etds/1005.
Повний текст джерелаShah, Pratikkumar. "Development of a Lab-on-a-Chip Device for Rapid Nanotoxicity Assessment In Vitro." FIU Digital Commons, 2014. http://digitalcommons.fiu.edu/etd/1834.
Повний текст джерелаJouvet, Nicolas. "Intégration hybride de transistors à un électron sur un noeud technologique CMOS." Phd thesis, INSA de Lyon, 2012. http://tel.archives-ouvertes.fr/tel-00863770.
Повний текст джерелаVladimirova, Kremena. "Nouveaux concepts pour l'intégration 3D et le refroidissement des semi-conducteurs de puissance à structure verticale." Phd thesis, Université de Grenoble, 2012. http://tel.archives-ouvertes.fr/tel-00738000.
Повний текст джерелаWidmer, Johannes. "Charge transport and energy levels in organic semiconductors." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2014. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-154918.
Повний текст джерелаOrganische Halbleiter sind eine neue Schlüsseltechnologie für großflächige und flexible Dünnschichtelektronik. Sie werden als dünne Materialschichten (Sub-Nanometer bis Mikrometer) auf großflächige Substrate aufgebracht. Die technologisch am weitesten fortgeschrittenen Anwendungen sind organische Leuchtdioden (OLEDs) und organische Photovoltaik (OPV). Zur weiteren Steigerung von Leistungsfähigkeit und Effizienz ist die genaue Modellierung elektronischer Prozesse in den Bauteilen von grundlegender Bedeutung. Für die erfolgreiche Optimierung von Bauteilen ist eine zuverlässige Charakterisierung und Validierung der elektronischen Materialeigenschaften gleichermaßen erforderlich. Außerdem eröffnet das Verständnis der Zusammenhänge zwischen Materialstruktur und -eigenschaften einen Weg für innovative Material- und Bauteilentwicklung. Im Rahmen dieser Dissertation werden zwei Methoden für die Materialcharakterisierung entwickelt, verfeinert und angewandt: eine neuartige Methode zur Messung der Ladungsträgerbeweglichkeit μ und eine Möglichkeit zur Bestimmung der Ionisierungsenergie IE oder der Elektronenaffinität EA eines organischen Halbleiters. Für die Beweglichkeitsmessungen wird eine neue Auswertungsmethode für raumladungsbegrenzte Ströme (SCLC) in unipolaren Bauteilen entwickelt. Sie basiert auf einer Schichtdickenvariation des zu charakterisierenden Materials. In einem Ansatz zur räumlichen Abbildung des elektrischen Potentials (\"potential mapping\", POEM) wird gezeigt, dass das elektrische Potential als Funktion der Schichtdicke V(d) bei einer gegebenen Stromdichte dem räumlichen Verlauf des elektrischen Potentials V(x) im dicksten Bauteil entspricht. Daraus kann die Beweglichkeit als Funktion des elektrischen Felds F und der Ladungsträgerdichte n berechnet werden. Die Auswertung ist modellfrei, d.h. ein Modell zum Angleichen der Messdaten ist für die Berechnung von μ(F, n) nicht erforderlich. Die Messung ist außerdem unabhängig von einer möglichen Injektionsbarriere oder einer Potentialstufe an nicht-idealen Kontakten. Die gemessene Funktion μ(F, n) beschreibt die effektive durchschnittliche Beweglichkeit aller freien und in Fallenzuständen gefangenen Ladungsträger. Dieser Zugang beschreibt den Ladungstransport in energetisch ungeordneten Materialien realistisch, wo eine klare Unterscheidung zwischen freien und Fallenzuständen nicht möglich oder willkürlich ist. Die Messung von IE und EA wird mithilfe temperaturabhängiger Messungen an Solarzellen durchgeführt. In geeigneten Bauteilen mit einem Mischschicht-Heteroübergang (\"bulk heterojunction\" BHJ) ist die Leerlaufspannung Voc im gesamten Messbereich oberhalb 180K eine linear fallende Funktion der Temperatur T. Es kann bestätigt werden, dass die Extrapolation zum Temperaturnullpunkt V0 = Voc(T → 0K) mit der effektiven Energielücke Egeff , d.h. der Differenz zwischen EA des Akzeptor-Materials und IE des Donator-Materials, übereinstimmt. Die systematische schrittweise Variation einzelner Bestandteile der Solarzellen und die Überprüfung des Einflusses auf V0 bestätigen die Beziehung V0 = Egeff. Damit kann die IE oder EA eines Materials bestimmt werden, indem man es in einem BHJ mit einem Material kombiniert, dessen komplementärer Wert bekannt ist. Messungen per Ultraviolett-Photoelektronenspektroskopie (UPS) und inverser Photoelektronenspektroskopie (IPES) werden damit bestätigt, präzisiert und ergänzt. Die beiden entwickelten Messmethoden werden auf organische Halbleiter aus kleinen Molekülen einschließlich Mischschichten angewandt. In Mischschichten aus Zink-Phthalocyanin (ZnPc) und C60 wird eine Löcherbeweglichkeit gemessen, die sowohl thermisch als auch feld- und ladungsträgerdichteaktiviert ist. Wenn das Mischverhältnis variiert wird, steigt die Löcherbeweglichkeit mit zunehmendem ZnPc-Anteil, während die effektive Energielücke unverändert bleibt. Verschiedene weitere Materialien und Materialmischungen werden hinsichtlich Löcher- und Elektronenbeweglichkeit sowie ihrer Energielücke charakterisiert, einschließlich bisher wenig untersuchter hochverdünnter Donator-Systeme. In allen Materialien wird eine deutliche Feldaktivierung der Beweglichkeit beobachtet. Die Ergebnisse ermöglichen eine verbesserte Beschreibung der detaillierten Funktionsweise organischer Solarzellen und unterstützen die künftige Entwicklung hocheffizienter und optimierter Bauteile
Zare, Firuz. "Multilevel converter structure and control." Thesis, Queensland University of Technology, 2001. https://eprints.qut.edu.au/36142/7/36142_Digitsed%20Thesis.pdf.
Повний текст джерелаPu, Long. "Nanostructured Materials for Pseudocapacitors and Single-Electron Devices." Thesis, 2014. http://hdl.handle.net/10012/8464.
Повний текст джерелаLuo, Xiangning. "Resistive CrO[subscript x] thin film for single-electron devices." 2005. http://etd.nd.edu/ETD-db/theses/available/etd-04132005-125629/.
Повний текст джерелаThesis directed by Gregory L. Snider and Alexei O. Orlov for the Department of Electrical Engineering. "April 2005." Includes bibliographical references (leaves 138-141).
Huang, Zih-Hsuan, and 黃子萱. "Characterization of high-frequency filtering techniques for single electron devices." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/69088868605101813427.
Повний текст джерела國立交通大學
電子物理系所
103
We investigate the influence of electromagnetic noise on the measurement of mesoscopic samples. Using a Nickel film, we show that the electron temperature of the sample can remain above that of the cryostat. This may be due to high frequency noise reaching the sample. We demonstrate the influence of this noise on the properties of a superconducting SET, and use different filters to improve the measurement. We find that metal film resistors give good filtering, allowing us to characterize the SET device. We find that our SET device is suitable for sensitive charge detection experiments.
Ray, Vishva. "Room-temperature single-electron devices based on CMOS fabrication technology." 2008. http://hdl.handle.net/10106/1886.
Повний текст джерелаDan, Surya Shankar. "Impact Of Energy Quantization On Single Electron Transistor Devices And Circuits." Thesis, 2009. http://hdl.handle.net/2005/666.
Повний текст джерелаLin, Shang-Wei, and 林上偉. "Study of Forming Si/Ge Quantum dots for Single-Electron Devices." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/17073552506973351786.
Повний текст джерела國立中央大學
電機工程研究所
92
In this thesis, the technique of forming Si & Ge quantum dots for Single-electron devices will be proposed. The advantages of the technique are well controllable, reproducible and compatible with traditional CMOS process.
Chou, Chuan-Sheng, and 周詮勝. "Characterization of electron trap energy spectrum in single-ended non-overlapped implantation devices." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/ne6tp4.
Повний текст джерела中原大學
電子工程研究所
102
In the semiconductor industry, non-volatile memory (NVM) applications are extensive, and the relative markets have been well developed. For developing semiconductor NVM devices, the effect and improvement of reliability characteristics play important roles. This work is aimed at investigating the surface states and energy profile of single-side non-overlapped implantation (SNOI) MOSFETs which use the drain-side spacer region to store charges by hot carrier injection. To extract the interface state of energy distribution and trap density, we used the two-level charge pumping method and three-level charge pumping methods for investigating SNOI devices. Based on the charge pumping measurement results, the interface trap and trap energy can be found. Finally, by using the charge pumping method, the energy distribution will shift about 60meV to the shallow site, and the interface trap density will increase to about 2.5x1010 (cm-2eV-1) after the program process.