Статті в журналах з теми "Single Crystal Thin Film Growth"
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Seifert, A., A. Vojta, J. S. Speck, and F. F. Lange. "Microstructural instability in single-crystal thin films." Journal of Materials Research 11, no. 6 (June 1996): 1470–82. http://dx.doi.org/10.1557/jmr.1996.0183.
Повний текст джерелаCai, Chuanbing, and Hiroyuki Fujimoto. "Effects of Nd123/MgO Thin Film and MgO Single-crystal Seeds in Isothermal Solidification of YBaCuO/Ag." Journal of Materials Research 15, no. 8 (August 2000): 1742–48. http://dx.doi.org/10.1557/jmr.2000.0251.
Повний текст джерелаIchikawa, Yoko, Toshiyuki Matsunaga, Mohsen Hassan, Isaku Kanno, Takaaki Suzuki, and Kiyotaka Wasa. "Growth and structure of heteroepitaxial lead titanate thin films constrained by miscut strontium titanate substrates." Journal of Materials Research 21, no. 5 (May 1, 2006): 1261–68. http://dx.doi.org/10.1557/jmr.2006.0162.
Повний текст джерелаChang, H. L. M., T. J. Zhang, H. Zhang, J. Guo, H. K. Kim, and D. J. Lam. "Epitaxy, microstructure, and processing-structure relationships of TiO2 thin films grown on sapphire (0001) by MOCVD." Journal of Materials Research 8, no. 10 (October 1993): 2634–43. http://dx.doi.org/10.1557/jmr.1993.2634.
Повний текст джерелаKrakow, W., N. M. Rivera, R. A. Roy, R. S. Ruoff, and J. J. Cuomo. "Epitaxial growth of C60 thin films on mica." Journal of Materials Research 7, no. 4 (April 1992): 784–87. http://dx.doi.org/10.1557/jmr.1992.0784.
Повний текст джерелаOhtake, Mitsuru, Shigeyuki Minakawa, and Masaaki Futamoto. "Preparation of 3d Ferromagnetic Transition Metal Thin Films with Metastable bcc Structure on GaAs(100) Substrates." Key Engineering Materials 605 (April 2014): 478–82. http://dx.doi.org/10.4028/www.scientific.net/kem.605.478.
Повний текст джерелаWang, Nan, Yu-Xiang Dai, Tian-Lin Wang, Hua-Zhe Yang, and Yang Qi. "Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bismuth thin films." IUCrJ 7, no. 1 (January 1, 2020): 49–57. http://dx.doi.org/10.1107/s2052252519015458.
Повний текст джерелаMiller, K. T., and F. F. Lange. "Highly oriented thin films of cubic zirconia on sapphire through grain growth seeding." Journal of Materials Research 6, no. 11 (November 1991): 2387–92. http://dx.doi.org/10.1557/jmr.1991.2387.
Повний текст джерелаHeimann, D., T. Wagner, J. Bill, F. Aldinger та F. F. Lange. "Epitaxial growth of β–SiC thin films on a 6H–SiC substrate using the chemical solution deposition method". Journal of Materials Research 12, № 11 (листопад 1997): 3099–101. http://dx.doi.org/10.1557/jmr.1997.0403.
Повний текст джерелаTamaki, Jun, Gregory K. L. Goh, and Fred F. Lange. "Novel epitaxial growth of barium titanate thin films by electrodeposition." Journal of Materials Research 15, no. 12 (December 2000): 2583–86. http://dx.doi.org/10.1557/jmr.2000.0368.
Повний текст джерелаYang, Tsung-Han, Chunming Jin, Ravi Aggarwal, R. J. Narayan, and Jay Narayan. "On growth of epitaxial vanadium oxide thin film on sapphire (0001)." Journal of Materials Research 25, no. 3 (March 2010): 422–26. http://dx.doi.org/10.1557/jmr.2010.0059.
Повний текст джерелаMurakami, Toshiaki, and Minoru Suzuki. "Single-Crystal Thin-Film Growth and Properties of BaPb1-xBixO3." Japanese Journal of Applied Physics 24, S2 (January 1, 1985): 323. http://dx.doi.org/10.7567/jjaps.24s2.323.
Повний текст джерелаWASA, K., S. H. SEO, D. Y. NOH, I. KANNO, and T. SUZUKI. "HETEROEPITAXIAL GROWTH OF STRESS FREE SINGLE CRYSTAL PEROVSKITE THIN FILMS." Surface Review and Letters 13, no. 02n03 (April 2006): 167–72. http://dx.doi.org/10.1142/s0218625x06008189.
Повний текст джерелаShaw, David T. "Controlled Growth of High-Temperature Superconducting Thin Films on Polycrystalline Substrates." MRS Bulletin 17, no. 8 (August 1992): 39–44. http://dx.doi.org/10.1557/s0883769400041841.
Повний текст джерелаGrant Norton, M., and C. Barry Carter. "Observation of the early stages of heteroepitactic growth of BaTiO3 thin-films." Journal of Materials Research 5, no. 12 (December 1990): 2762–65. http://dx.doi.org/10.1557/jmr.1990.2762.
Повний текст джерелаWasa, Kiyotaka, Isaku Kanno, and Takaaki Suzuki. "Structure and Electromechanical Properties of Quenched PMN-PT Single Crystal Thin Films." Advances in Science and Technology 45 (October 2006): 1212–17. http://dx.doi.org/10.4028/www.scientific.net/ast.45.1212.
Повний текст джерелаMoustakas, Theodore D. "Molecular Beam Epitaxy: Thin Film Growth and Surface Studies." MRS Bulletin 13, no. 11 (November 1988): 29–36. http://dx.doi.org/10.1557/s0883769400063892.
Повний текст джерелаSong, Yiwen, Chi Zhang, James Spencer Lundh, Hsien-Lien Huang, Yue Zheng, Yingying Zhang, Mingyo Park, et al. "Growth-microstructure-thermal property relations in AlN thin films." Journal of Applied Physics 132, no. 17 (November 7, 2022): 175108. http://dx.doi.org/10.1063/5.0106916.
Повний текст джерелаNg, Man Fai, and Michael J. Cima. "Heteroepitaxial growth of lanthanum aluminate films derived from mixed metal nitrates." Journal of Materials Research 12, no. 5 (May 1997): 1306–14. http://dx.doi.org/10.1557/jmr.1997.0179.
Повний текст джерелаKang, Geon-Hyeong, Ki Chul Jung, Jongbum Kim, JoonHyun Kang, In Soo Kim, and Young-Hwan Kim. "Growth of High-Quality Perovskite KTa1-xNbxO3 Thin Films by RF Magnetron Co-Sputtering." Coatings 12, no. 11 (November 21, 2022): 1787. http://dx.doi.org/10.3390/coatings12111787.
Повний текст джерелаHe, Xi, Xiaotao Xu, Xiaoyan Shi, and Ivan Božović. "Optimization of La2−xSrxCuO4 Single Crystal Film Growth via Molecular Beam Epitaxy." Condensed Matter 8, no. 1 (January 20, 2023): 13. http://dx.doi.org/10.3390/condmat8010013.
Повний текст джерелаGrant Norton, M., James Bentley, and Rand R. Biggers. "In Situ Electron Microscopy observations of structural transformations in single crystal lanthanum aluminate." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 238–39. http://dx.doi.org/10.1017/s0424820100137562.
Повний текст джерелаTakeyama, Shojiro, Katsuyosi Watanabe, and Teruo Komatsu. "Thin-Film Single-Crystal Growth of BiI3by a Hot Wall Technique." Japanese Journal of Applied Physics 29, Part 1, No. 4 (April 20, 1990): 710–17. http://dx.doi.org/10.1143/jjap.29.710.
Повний текст джерелаKomatsu, Keiji, Pineda Marulanda David Alonso, Nozomi Kobayashi, Ikumi Toda, Shigeo Ohshio, Hiroyuki Muramatsu, and Hidetoshi Saitoh. "Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition." Journal of Materials Science Research 5, no. 2 (January 31, 2016): 56. http://dx.doi.org/10.5539/jmsr.v5n2p56.
Повний текст джерелаRen, Shi Wei, Jing Wei Sun, and Yan Zhong Hao. "Simulation of the Growth, Structure and Crystallization of the Amorphous Silicon Thin Film." Advanced Materials Research 602-604 (December 2012): 1457–60. http://dx.doi.org/10.4028/www.scientific.net/amr.602-604.1457.
Повний текст джерелаQiu, Yu, Peter Gerstel, Linqin Jiang, Peter Lipowsky, Luciana Pitta Bauermann, and Joachim Bill. "Aqueous solution deposition of indium hydroxide and indium oxide columnar type thin films." International Journal of Materials Research 97, no. 6 (June 1, 2006): 808–11. http://dx.doi.org/10.1515/ijmr-2006-0130.
Повний текст джерелаKitahara, Gyo, Satoru Inoue, Toshiki Higashino, Mitsuhiro Ikawa, Taichi Hayashi, Satoshi Matsuoka, Shunto Arai, and Tatsuo Hasegawa. "Meniscus-controlled printing of single-crystal interfaces showing extremely sharp switching transistor operation." Science Advances 6, no. 41 (October 2020): eabc8847. http://dx.doi.org/10.1126/sciadv.abc8847.
Повний текст джерелаWang, Jing, Weiyuan Wang, Jiyu Fan, Huan Zheng, Hao Liu, Chunlan Ma, Lei Zhang, et al. "Epitaxial growth and room-temperature ferromagnetism of quasi-2D layered Cr4Te5 thin film." Journal of Physics D: Applied Physics 55, no. 16 (January 24, 2022): 165001. http://dx.doi.org/10.1088/1361-6463/ac47c2.
Повний текст джерелаResel, Roland, Markus Koini, Jiri Novak, Steven Berkebile, Georg Koller, and Michael Ramsey. "Epitaxial Order Driven by Surface Corrugation: Quinquephenyl Crystals on a Cu(110)-(2×1)O Surface." Crystals 9, no. 7 (July 22, 2019): 373. http://dx.doi.org/10.3390/cryst9070373.
Повний текст джерелаGrant Norton, M., та C. Barry Carter. "Nucleation and Heteroepitaxy of YBa2Cu3O7-δ thin films". Proceedings, annual meeting, Electron Microscopy Society of America 48, № 4 (серпень 1990): 88–89. http://dx.doi.org/10.1017/s0424820100173571.
Повний текст джерелаSeifert, Andreas. "Epitaxial growth of PbTiO3 thin films on {100} SrTiO3 from solution precursors." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 576–77. http://dx.doi.org/10.1017/s042482010017061x.
Повний текст джерелаChaudhuri, J., R. Thokala, J. H. Edgar, and B. S. Sywe. "Characterization Of Single Crystal Epitaxial Aluminum Nitride Thin Films On Sapphire, Silicon Carbide And Silicon Substrates By X-Ray Double Crystal Diffractometry And Transmission Electron Microscopy." Advances in X-ray Analysis 39 (1995): 645–51. http://dx.doi.org/10.1154/s0376030800023077.
Повний текст джерелаEndoh, Norifumi, Shoji Akiyama, Keiichiro Tashima, Kento Suwa, Takamasa Kamogawa, Roki Kohama, Kazutoshi Funakubo, et al. "High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications." Nanomaterials 11, no. 2 (February 4, 2021): 392. http://dx.doi.org/10.3390/nano11020392.
Повний текст джерелаCheng, Xiankun, Qiang Gao, Kaifeng Li, Zhongliang Liu, Qinzhuang Liu, Qiangchun Liu, Yongxing Zhang, and Bing Li. "Enhanced Phase Transition Properties of VO2 Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition." Nanomaterials 9, no. 8 (July 24, 2019): 1061. http://dx.doi.org/10.3390/nano9081061.
Повний текст джерелаMiller, K. T., F. F. Lange, and D. B. Marshall. "The instability of polycrystalline thin films: Experiment and theory." Journal of Materials Research 5, no. 1 (January 1990): 151–60. http://dx.doi.org/10.1557/jmr.1990.0151.
Повний текст джерелаShin, D. H., J. Silcox, S. E. Russek, D. K. Lathrop, B. Moeckly, and R. A. Buhrman. "Quasi-epitaxial orientations of grains and structure of grain boundaries in YBa2Cu3O7−x thin films." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (August 1990): 4–5. http://dx.doi.org/10.1017/s0424820100173157.
Повний текст джерелаFave, A., S. Berger, A. Beaumont, B. Semmache, P. Kleimann, J. Linnroos, and A. Laugier. "LPE growth of textured single crystal silicon thin film for PV applications." Thin Solid Films 383, no. 1-2 (February 2001): 209–11. http://dx.doi.org/10.1016/s0040-6090(00)01619-9.
Повний текст джерелаIto, Akihiko, Hiroshi Masumoto, and Takashi Goto. "Morphology of Epitaxially Grown BaRuO3 and CaRuO3 Thin Films by Laser Ablation." Key Engineering Materials 352 (August 2007): 315–18. http://dx.doi.org/10.4028/www.scientific.net/kem.352.315.
Повний текст джерелаFrancis, Andrew J., and Paul A. Salvador. "Crystal orientation and surface morphology of face-centered-cubic metal thin films deposited upon single-crystal ceramic substrates using pulsed laser deposition." Journal of Materials Research 22, no. 1 (January 2007): 89–102. http://dx.doi.org/10.1557/jmr.2007.0014.
Повний текст джерелаTu, Rong, Jin Huang, Song Zhang, and Lian Meng Zhang. "Epitaxial Growth of Copper Film by MOCVD." Key Engineering Materials 680 (February 2016): 507–10. http://dx.doi.org/10.4028/www.scientific.net/kem.680.507.
Повний текст джерелаNashimoto, Keiichi, Michael J. Cima, Paul C. McIntyre, and Wendell E. Rhine. "Microstructure development of sol-gel derived epitaxial LiNbO3 thin films." Journal of Materials Research 10, no. 10 (October 1995): 2564–72. http://dx.doi.org/10.1557/jmr.1995.2564.
Повний текст джерелаHuang, Jen Ching, Yi Chia Liao, Huail Siang Liu, and Fu Jen Cheng. "The Study on Deposition Process and Mechanical Properties of Deposited Cu Thin Films Using Molecular Dynamics." Advanced Materials Research 684 (April 2013): 37–41. http://dx.doi.org/10.4028/www.scientific.net/amr.684.37.
Повний текст джерелаHwang, Cheol Seong, Mark D. Vaudin, and Gregory T. Stauf. "Influence of substrate annealing on the epitaxial growth of BaTiO3 thin films by metal-organic chemical vapor deposition." Journal of Materials Research 12, no. 6 (June 1997): 1625–33. http://dx.doi.org/10.1557/jmr.1997.0222.
Повний текст джерелаZhang, Ying Xiao, Hong Li Suo, Yue Zhao, Min Liu, Rong Wang, Dong He, Lin Ma, and Mei Ling Zhou. "Epitaxial Growth of CeO2 Buffer Layers on Both YSZ Single Crystal and Textured Ni5W Substrates by MOD Method." Materials Science Forum 546-549 (May 2007): 2011–14. http://dx.doi.org/10.4028/www.scientific.net/msf.546-549.2011.
Повний текст джерелаJokerst, N. M. "Integrated Optoelectronics Using Thin Film Epitaxial Liftoff Materials and Devices." Journal of Nonlinear Optical Physics & Materials 06, no. 01 (March 1997): 19–48. http://dx.doi.org/10.1142/s0218863597000034.
Повний текст джерелаOjonugwa Daniel, Thomas, Uno Essang Uno, Kasim Uthman Isah, and Umaru Ahmadu. "Structural and microstructural study of SnS thin film semiconductor of 0.2." International Journal of Physical Research 7, no. 1 (May 27, 2019): 26. http://dx.doi.org/10.14419/ijpr.v7i1.27700.
Повний текст джерелаChien, A. T., L. Zhao, M. Colic, J. S. Speck, and F. F. Lange. "Microstructural development of BaTiO3 heteroepitaxial thin films by hydrothermal synthesis." Journal of Materials Research 13, no. 3 (March 1998): 649–59. http://dx.doi.org/10.1557/jmr.1998.0081.
Повний текст джерелаNutt, S. R., та David J. Smith. "High-resolution TEM of thin-film β-SiC interfaces". Proceedings, annual meeting, Electron Microscopy Society of America 44 (серпень 1986): 408–9. http://dx.doi.org/10.1017/s0424820100143638.
Повний текст джерелаSaraf, L. V., Z. H. Zhu, C. M. Wang, and M. H. Engelhard. "Microstructure and secondary phase segregation correlation in epitaxial/oriented ZnO films with unfavorable Cr dopant." Journal of Materials Research 24, no. 2 (February 2009): 506–15. http://dx.doi.org/10.1557/jmr.2009.0054.
Повний текст джерелаPavlenko A.V., Stryukov D. V., and Kubrin S.P. "The phase composition and structure of the BiFeO-=SUB=-3-=/SUB=- film grown on MgO(001) substrate by high frequency cathode deposition in oxygen atmosphere." Physics of the Solid State 64, no. 2 (2022): 206. http://dx.doi.org/10.21883/pss.2022.02.52969.215.
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