Дисертації з теми "Silicon Tandem Cells"
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Bett, Alexander Jürgen [Verfasser], and Stefan [Akademischer Betreuer] Glunz. "Perovskite silicon tandem solar cells : : two-terminal perovskite silicon tandem solar cells using optimized n-i-p perovskite solar cells." Freiburg : Universität, 2020. http://d-nb.info/1214179703/34.
Повний текст джерелаMirabelli, Alessandro James. "Highly efficient monolithic Perovskite/Silicon bifacial tandem solar cells." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2020. http://amslaurea.unibo.it/20369/.
Повний текст джерелаRedorici, Lisa. "Efficiency limits for silicon/perovskite tandem solar cells: a theoretical model." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2015. http://amslaurea.unibo.it/9531/.
Повний текст джерелаGugole, Marika. "Development and characterisation of silicon solar cells with recombination interconnects for future tandem solar cells." Thesis, Uppsala universitet, Institutionen för fysik och astronomi, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-355765.
Повний текст джерелаDavidson, Lauren Michel. "Strategies for high efficiency silicon solar cells." Thesis, University of Iowa, 2017. https://ir.uiowa.edu/etd/5452.
Повний текст джерелаSchulze, Patricia S. C. [Verfasser], Harald [Akademischer Betreuer] Hillebrecht, and Stefan [Akademischer Betreuer] Glunz. "High band gap perovskite absorbers for application in monolithic perovskite silicon tandem solar cells." Freiburg : Universität, 2020. http://d-nb.info/122336612X/34.
Повний текст джерелаKomatu, Yuji. "Study on silicon-based tandem solar cells with novel structure towards super high efficiency." Kyoto University, 1997. http://hdl.handle.net/2433/202311.
Повний текст джерелаZafoschnig, Lisa Anna. "SnOx electron selective layers for perovskite/silicon tandem solar cells using atomic layer deposition." Thesis, KTH, Energiteknik, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-245992.
Повний текст джерелаA I detta arbete appliceringen av ALD deponerade SnOx lager som selektiv kontakt till elektronerna perovskite solceller är analyserad. Processer för att fabricera homogena, transparenta och ledande SnOx lager utvecklades med en Oxford Instruments FlexAL med användnig av TDMASn gas och H2O. Två typer av processer analyserades; en ALD process, där dem reaktiva gaser är helt sepererade av långa rensande steg och en pulsed-CVD process, där korta rensningstider tillåter kontinuerliga reaktioner. Båda processer analyserades vid despositionstemperaturer från 100 till 250°C och visade en minsknig i tillväxtakten med en ökning i refractive index för högre temperaturer. Gällande optiska egenskaper, väldigt transparenta lager i det synliga området (> 80%) blev erhållna för alla analyserade processer. De proven med den lägsta absorptionen var SnOx filmer vid låga temperaturer i pulsed – CDV regimer. Lager med en låg absorption uppvisade ochså förbättrad ledningsförmåga inom intervaller från 200 – 500 Ωcm, som minskade ännu mer när proven blev uppvärmda. Alla utrettade lager var amorfisk med en hög andel tenn i SnOx. Procceserna genomfördes för att vara kompatibel med n-i-p och p-i-n perovskite solceller samt tandem apparater på texturerad kisel bottenceller, på grund av enhetlig beläggning vid låga depositionstemperaturer och inget behov av termisk behandling i efterhand. För applikationen på cellnivå, perovskite solceller i en n-i-p konstruktion tillverkades med ett ~15 nm SnOx lager som selektiv kontakt till elektronerna. För att förbättra kontakten olika naturliga mellanskikter och mesoporös TiO2 undersöktes under det perovskite lagret. Det sågs att användnigen av PCBM på SnOx förbättrade funktionen av solcellerna av apparater med en dunstad MAPbI3 absorbator. Solceller med effektivitet nära 6% tillverkades, som ledde till en medelmåttligt hög Voc vid ~990 mV men låg Jsc vid < 10 mA/cm². För apparater med perovskite deponerade vid spin-coating, fullerene-lösningen bildade inget stängt lager på grund av vätningsproblem på SnOx och risken att tvätta bort den spin-coated perovskite lösningen. SEM-bilder bekräftade att inga stängda mellanskikter bildades i dem våtkemiska apparater. Det skulle kunna vara grunden till den dåliga reproducerbarheten av apparater med en platt struktur och SnOx som selektiv kontakt till elektronerna. Den apparaten som uppträdde bäst uppnåddes med SnOx och mesoporös TiO2 deponerade vid spin-coating och en MAPbI3 absorbator. Det visade en genomsnittlig verkningsgrad av 12,8% med Voc > 990 mV och Jsc nära 20 mA/cm². I jämförelse med TiO2 referensceller, dem apparatener som använde SnOx visade lägra effektivitet men förbättrat reproducerbarhet och minskad hysteresis i den mesoporösa strukturen. Dem producerade celler tjäna som första bevis av konceptet för användningen av SnOx vid ALD i den analyserade strukturen av solcellerna. För att analysera potentialen av kommersialiseringen av perovskite baserade photovoltaiv tekniker en ekonomisk analys genomfördes. Att ta med i beräkning storskalig tillverkningsprocesser till perovskite moduler, tillverkningskostnader vid 21.0 $/m² kalkulerades. Denna kostnad är under dem kalkulerade tillåtna extra kostnader till toppcellen av en tandem apparat med 30% effektivitet, beräknad vid 30 – 80 $/m². Projektioner av LCOE visade att perovskite celler med en verkningsgrad vid 15% och en livstid på 25 år skulle kunna uppnå ett LCOE vid 5.2 c/kWh. Två-terminal tandem apparater men en liknande livstid och en effektivitet vid 27% ett LCOE vid 6.6 c/kWh skulle potentiellt kunna bli uppnått, om man gjorde båda tekniker konkurrenskraftiga med andra energitekniker i Tyskland. En översikt av litteratur om livscykelanalyser visade att, trots användningen av blybaserad absorbtionsmaterial, perovskite tekniker har en låg miljöpåverkan och anses vara mer hållbart än andra foltovoltaisk tekniker.
Dai, Letian. "Silicon nanowire solar cells with μc-Si˸H absorbers for tandem radial junction devices". Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLS303.
Повний текст джерелаIn this thesis, we have fabricated silicon nanowire (SiNW) radial junction solar cells with hydrogenated microcrystalline silicon (μc-Si:H) as the absorber via low-temperature plasma-enhanced chemical vapor deposition (PECVD). To control the density of NW on the substrates, we have used commercially available tin dioxide (SnO₂) nanoparticles (NPs) with an average diameter of 55 nm as the precursor of Sn catalyst for the growth of SiNWs. The distribution of SnO₂ NPs on the substrate has been controlled by centrifugation and the dilution of the SnO₂ colloid, combined with the functionalization of the substrate. Subsequently, SnO₂ is reduced to metallic Sn after the H₂ plasma treatment, followed by the plasma-assisted vapor-liquid-solid (VLS) growth of SiNWs upon which the P, I and N layers constituting the radial junction solar cells are deposited. We have achieved a high yield growth of SiNWs up to 70% with a very wide range of NW density, from 10⁶ to 10⁹ /cm². As an additional approach of controlling the density of SiNWs we have used evaporated Sn as the precursor of Sn catalyst. We have studied the effect of the thickness of evaporated Sn, the effect of duration of H₂ plasma treatment and the effect of H₂ gas flow rate in the plasma, on the density of SiNWs.In-situ spectroscopic ellipsometry (SE) was used for monitoring the growth of SiNWs and the deposition of the layers of μc-Si:H on SiNWs. Combining in-situ SE and SEM results, a relationship between the intensity of SE signal and the length and the density of SiNWs during the growth was demonstrated, which allows to estimate the density and the length of SiNWs during the growth. We have carried out a systematic study of materials (intrinsic, p-type,n-type µc-Si:H and µcSiOx:H doped layers) and solar cells obtained in two plasma reactors named “PLASFIL” and “ARCAM”. The thicknesses of coating on the flat substrate and on the SiNWs have been determined with a linear relation which helps to design a conformal coating on SiNWs for each layer with an optimal thickness. The parameters of the SiNWs and the materials, affecting the performance of radial junction solar cells, have been systematically studied, the main ones being the length and the density of SiNWs, the thickness of intrinsic layer of μc-Si:H on SiNWs, the use of the hydrogenated microcrystalline silicon oxide (μc-SiOx:H) and the back reflector Ag. Finally, with the optimized silicon nanowire radial junction solar cells using the μc-Si:H as the absorber we have achieved an energy conversion efficiency of 4.13 % with Voc = 0.41 V, Jsc = 14.4 mA/cm² and FF = 69.7%. This performance is more than 40 % better than the previous published record efficiency of 2.9 %
Michaud, Amadeo. "III-V / Silicon tandem solar cell grown with molecular beam epitaxy." Electronic Thesis or Diss., Sorbonne université, 2019. http://www.theses.fr/2019SORUS247.
Повний текст джерелаTerrestrial photovoltaic is dominated by Silicon based devices. For this type of solar cells, the theory predicts an efficiency limit of 29%. With photovoltaic modules showing 26.6% efficiency already, Silicon-based modules is a mature technology and harvest almost their full potential. In this work, we intend to explore another path toward the enhancement of photovoltaic conversion efficiency. Tandem solar cells that consist in stacking sub-cells, allow to overcome the Si efficiency limit. Since solar cells made of III-V semiconductors are complementary to Silicon solar cells, theory predicts that efficiency above 40% is attainable when combining those types of cells. Here we focus on the elaboration of a performant III-V solar cell, compatible for a tandem use. The first stage of the PhD was to build know-how on phosphide alloys epitaxy with MBE. The influence of the growth conditions on GaInP properties was studied. We noted that composition modulations appear in the alloy when grown with low phosphorus pressure. The growth temperature also impacts the material bandgap, which reduces while increasing the temperature. Photoluminescence characterization served to select the best growth conditions by maximizing the photoluminescence efficiency. We could also highlight that in the conditions chosen, the GaInP exhibits less defect states. AlGaInP alloys are used for passivation purposes in the cells, the influence of the composition of the alloy on the Beryllium doping efficiency was studied. Then GaInP single junction solar cells were fabricated. The different layers composing the cells were optimized. The impact of the front surface passivation with AlGaInP and AlInP was emphasized; improvement of the cell photocurrent by the thinning of the n-doped GaInP layer was also demonstrated. The introduction of a non-intentionally-doped layer in the structure was tested in order to remedy the limits encountered with photocurrent collection. The p-GaInP composing the cells was eventually identified as the limiting factor. In depth characterization of samples mimicking the limiting layer was performed with cathodoluminescence and time-resolved fluorescence. A small diffusion length of the generated carriers was evidenced. Comparison with MOVPE and with literature values suggests that improving the carrier mobility in this layer is the main route to follow for improving of the GaInP cell efficiency. A practical solution was proposed and implemented: we designed a cell combining GaInP and AlGaAs in a heterojunction cell. This structure proves to be very relevant for the project since state of the art photoconversion efficiency of 18.7% was obtained. Finally a process was developed to adapt the III-V solar cells to the tandem configuration. Inverted PV cells structures were grown and transferred on glass or Silicon hosts without degradation of their efficiency. Further improvement of the process is needed to build a full tandem device, in particular the back metallization of the III-V cells must be compatible with the bonding of the cells on the host substrate
Gasparetto, Jacopo. "Investigation of indium tin oxide-titanium dioxide interconnection layers for perovskite-silicon tandem solar cells." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amslaurea.unibo.it/14230/.
Повний текст джерелаMailoa, Jonathan P. "Beyond the Shockley-Queisser limit : intermediate band and tandem solar cells leveraging silicon and CdTe technology." Thesis, Massachusetts Institute of Technology, 2016. http://hdl.handle.net/1721.1/105950.
Повний текст джерелаThis electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Cataloged from student-submitted PDF version of thesis. Page 156 blank.
Includes bibliographical references (pages 141-153).
The efficiencies of single-junction solar cells have been rapidly increasing and approaching their fundamental Shockley-Queisser efficiency limits. This is true for mature commercial technologies such as silicon and cadmium telluride. In order to enable solar cells with higher efficiency limits, new concepts need to be implemented which overcome the fundamental energy conversion mechanism limitations of single-junction solar cells. For this approach to be successful, it is advantageous to leverage existing manufacturing facilities and integrate these new solar cell architectures into commercially successful solar cell technologies such as silicon and cadmium telluride. In this thesis, two novel solar cell concepts are explored, categorized into three contributions. First, the application of intermediate band concept on silicon solar cells is explored by hyperdoping silicon, demonstrating room-temperature sub-band gap optoelectronic response from the material, and evaluating the feasibility of the intermediate band approach for improving silicon solar cell efficiency. Second, perovskite solar cells are integrated onto silicon solar cells to demonstrate mechanically-stacked perovskite/silicon tandem solar cell using low-cost silicon cell and monolithic perovskite/silicon tandem solar cell enabled by a silicon tunnel junction. Third, an analytic model is built to rapidly investigate the energy yield of different tandem solar cell architectures. When applied to cadmium telluride-based tandem solar cells, this model will help thin-film companies like First Solar narrow down the scope of future research and development programs on tandem solar cells.
by Jonathan P. Mailoa.
Ph. D.
Hoffmann, André [Verfasser], Uwe [Akademischer Betreuer] Rau, and Ralf B. [Akademischer Betreuer] Wehrspohn. "Light management by intermediate reflectors in silicon-based tandem solar cells / André Hoffmann ; Uwe Rau, Ralf B. Wehrspohn." Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://nbn-resolving.de/urn:nbn:de:hbz:82-rwth-2017-025055.
Повний текст джерелаHoffmann, André Verfasser], Uwe [Akademischer Betreuer] [Rau, and Ralf B. [Akademischer Betreuer] Wehrspohn. "Light management by intermediate reflectors in silicon-based tandem solar cells / André Hoffmann ; Uwe Rau, Ralf B. Wehrspohn." Aachen : Universitätsbibliothek der RWTH Aachen, 2017. http://d-nb.info/1162845783/34.
Повний текст джерелаVettori, Marco. "Growth optimization and characterization of regular arrays of GaAs/AIGaAs core/shell nanowires for tandem solar cells on silicon." Thesis, Lyon, 2019. http://www.theses.fr/2019LYSEC010/document.
Повний текст джерелаThe objective of this thesis is to achieve monolithical integration of Al0.2Ga0.8As-based nanowires (NWs) on Si substrates by molecular beam epitaxy via the self-assisted vapour-liquid-solid (VLS) method and develop a NWs-based tandem solar cell (TSC).In order to fulfil this purpose, we firstly focused our attention on the growth of GaAs NWs this being a key-step for the development of p-GaAs/p.i.n-Al0.2Ga0.8As core/shell NWs, which are expected to constitute the top cell of the TSC. We have shown, in particular, the influence of the incidence angle of the Ga flux on the GaAs NW growth kinetic. A theoretical model and numerical simulations were performed to explain these experimental results.Subsequently, we employed the skills acquired to grow p-GaAs/p.i.n-Al0.2Ga0.8As core/shell NWs on epi-ready Si substrates. EBIC characterizations performed on these NWs have shown that they are potential building blocks for a photovoltaic cell. We then committed to growing them on patterned Si substrates so as to obtain regular arrays of NWs. We have developed a protocol, based on a thermal pre-treatment, which allows obtaining high vertical yields of such NWs (80-90 %) on patterned Si substrates (on a surface of 0.9 x 0.9 mm2).Finally, we dedicated part of our work to define the optimal fabrication process for the TSC, focusing our attention to the development of the TSC tunnel junction, the NW encapsulation and the top contacting of the NWs
Onno, A. L. "Growth of III-V solar cells on silicon by Molecular Beam Epitaxy : towards monolithic III-V/Si tandem multijunction devices." Thesis, University College London (University of London), 2017. http://discovery.ucl.ac.uk/10037387/.
Повний текст джерелаAlmosni, Samy. "Growth, structural and electro-optical properties of GaP/Si and GaAsPN/ GaP single junctions for lattice-matched tandem solar cells on silicon." Thesis, Rennes, INSA, 2015. http://www.theses.fr/2015ISAR0010/document.
Повний текст джерелаThis thesis focuses on optimizing the heterogeneous growth of IIIN- V solar cells on GaP (001) and GaP nanolayers on Si (001). The goal is to build high efficiency solar cells on low-cost substrate for the realization of concentrated photovoltaic powerplant. The main results shows: - AlGaP as prenucleation layer increase the annihilations of anti-phase boundaries at the GaP/Si interface (harmful for the electronic properties of the devices). - Similarities between the growth of GaAsN and GaPN giving strategies to improve the GaAsPN electrical properties - Clear correlations between the optical and electrical properties of dilute nitride solar cells, giving interesting tools to optimize the growth of those materials using optical measurements. - The realization of a GaAsPN solar cell on GaP with a yield of 2.25%. This results is encouraging given the thin GaAsPN absorber used in this cell
Towfie, Nazley. "Dynamic variation of hydrogen dilution during hot-wire chemical vapour deposition of silicon thin films." Thesis, University of the Western Cape, 2013. http://hdl.handle.net/11394/3813.
Повний текст джерела>Magister Scientiae - MSc
Wagner, Philipp [Verfasser], Bernd [Akademischer Betreuer] Rech, Bernd [Gutachter] Rech, Bert [Gutachter] Stegemann, and Olindo [Gutachter] Isabella. "Interdigitated back-contact silicon heterojunction solar cells: development of patterning techniques and applications in tandem devices / Philipp Wagner ; Gutachter: Bernd Rech, Bert Stegemann, Olindo Isabella ; Betreuer: Bernd Rech." Berlin : Technische Universität Berlin, 2021. http://d-nb.info/1227989962/34.
Повний текст джерелаKegelmann, Lukas [Verfasser], Dieter [Akademischer Betreuer] Neher, Bernd [Akademischer Betreuer] Rech, Rutger [Akademischer Betreuer] Schlatmann, Dieter [Gutachter] Neher, Bernd [Gutachter] Rech, List-Kratochvil [Gutachter] Emil, Reimund [Gutachter] Gerhard, and Giovanni [Gutachter] Bruno. "Advancing charge selective contacts for efficient monolithic perovskite-silicon tandem solar cells / Lukas Kegelmann ; Gutachter: Dieter Neher, Bernd Rech, List-Kratochvil Emil, Reimund Gerhard, Giovanni Bruno ; Dieter Neher, Bernd Rech, Rutger Schlatmann." Potsdam : Universität Potsdam, 2019. http://d-nb.info/1218404507/34.
Повний текст джерелаMichard, Stephan Yann [Verfasser], Uwe [Akademischer Betreuer] Rau, and Joachim [Akademischer Betreuer] Knoch. "Relation between growth rate, material quality, and device grade condition for intrinsic microcrystalline silicon : from layer investigation to the application to thin-film tandem solar cells / Stephan Yann Michard ; Uwe Rau, Joachim Knoch." Aachen : Universitätsbibliothek der RWTH Aachen, 2015. http://nbn-resolving.de/urn:nbn:de:hbz:82-rwth-2015-012581.
Повний текст джерелаMichard, Stephan Yann Verfasser], Uwe [Akademischer Betreuer] [Rau, and Joachim [Akademischer Betreuer] Knoch. "Relation between growth rate, material quality, and device grade condition for intrinsic microcrystalline silicon : from layer investigation to the application to thin-film tandem solar cells / Stephan Yann Michard ; Uwe Rau, Joachim Knoch." Aachen : Universitätsbibliothek der RWTH Aachen, 2015. http://d-nb.info/1127739654/34.
Повний текст джерелаMedjoubi, Karim. "Investigation of new solar cell technology III-V//Si behavior under irradiations for space applications." Thesis, Institut polytechnique de Paris, 2021. http://www.theses.fr/2021IPPAX004.
Повний текст джерелаThis work focuses on the behavior in space environment of a new photovoltaic solar cell technology: the III-V//Si tandems (2- and 3-junction), obtained by direct bonding. These cells have been exposed to electron and proton irradiations and tested in two types of environment: a) normal irradiance, 1 sun, and 300K room temperature, NIRT condition (Earth orbits) and b) low irradiance, 0.03 sun, and 120K low temperature, LILT condition (deep space). In a preliminary stage, a comparative study was conducted on 2 solar simulators, respectively equipped with a flash lamp and LED lamps, in order to ensure the reliability and reproducibility of the measurements of these multi-junctions. For the flash simulator, a tandems characterization method for I-V under 1 sun that dispense the use of isotype reference cells has been adopted, based on EQE and flash spectrum measurements. For the LED simulator, mounted in-situ on the irradiation beam, a spectrum optimization was performed in order to approach the low irradiance reference, i.e. ~3% AM0. This comparative study also allowed to establish the validity of the extrapolation by calculating I-V measurements under 1 sun towards low irradiances.Then, the compatibility of this tandem III-V//Si technology with thermal cycling on the one hand and irradiances on the other hand has been demonstrated. The bonding interface maintains its mechanical and electrical integrity face to these constraints. The impact of the irradiations on the cell performances has revealed certain similarities at 300 K and 120 K: - a marked decrease in the short-circuit current (linked to the decrease in the diffusion length) - a smaller decrease in the open-circuit voltage (generation type defects). Due to the series connection of the sub-cells, the degradation of the limiting Si (low intrinsic resistance to irradiation) dominates the behavior of the multi-junction. It has been shown that the addition of an increasing number of cells on the Si results in an increased sensitivity to irradiation; indeed, the tandem configuration restricts the absorption band of the Si to the near infrared, the spectral part most affected by the decrease in diffusion length. The use of a model based on the IQE allowed the qualification of this diffusion length degradation of the Si in tandem, as well as the damage coefficient. Unlike electrons, 1 MeV proton irradiations are at the origin of a non-homogeneous degradation in Si; by EQE measurements coupled with simulation, we have correlated this non-homogeneous degradation in Si with the position of the corresponding Bragg peak.For the low-temperature study, a linear increase in efficiency was observed up to ~150K; and below this, anomalies of I V characteristics were detected; of "S-like shape" and "flat spot" type, these defects affect the FF and thus the efficiency. Reported in the literature, these effects are characteristic of LILT conditions, and are often related to changes in the metal/semiconductor interfaces. Although significant, the LILT end-of-life electrical performance degradation of III-V//Si has been shown to be more predictable than that of III-V/Ge LILT (statistical dispersion). We have also shown that a 300 K annealing after irradiation at 120 K leads to a marked healing of the short-circuit current; this underlines the importance of in-situ characterizations to quantify cell aging under operating conditions. The Displacement Damage Dose (DDD) approach was applied for 1 MeV electrons and protons in order to compare the rate of induced degradation. This approach allows to predict the degradation of these cells whatever the fluence, particles and energy, for a space mission at 300 K
Schnabel, Manuel. "Silicon nanocrystals embedded in silicon carbide for tandem solar cell applications." Thesis, University of Oxford, 2014. http://ora.ox.ac.uk/objects/uuid:da5bbb64-0bcd-4807-a9f3-4ff63a9ca98d.
Повний текст джерелаChuan, Chen Max. "Fabrication and Characterizationof Low Temperature Annealed Silicon Bottom Cell for CELOGbased Tandem Solar Cell Systems." Thesis, KTH, Tillämpad fysik, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-231927.
Повний текст джерелаChen, Mas Chuan. "Fabrication and Characterizationof Low Temperature Annealed Silicon Bottom Cell for CELOG based Tandem Solar Cell Systems." Thesis, KTH, Tillämpad fysik, 2018. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-231540.
Повний текст джерелаCavalazzi, Gianmarco. "Fisica delle celle fotovoltaiche modelli e prospettive di ricerca." Bachelor's thesis, Alma Mater Studiorum - Università di Bologna, 2021. http://amslaurea.unibo.it/24338/.
Повний текст джерелаHuang, Zhiquan. "Spectroscopic Ellipsometry Studies of Thin Film a-Si:H/nc-Si:H Micromorph Solar Cell Fabrication in the p-i-n Superstrate Configuration." University of Toledo / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1460919549.
Повний текст джерелаJelena, Ćurčić. "In silico određivanje fizičko-hemijskih, farmakokinetskih i toksikoloških parametara i in vitro ispitivanje antiproliferativne aktivnosti novosintetisanih derivata N-sukcinimida." Phd thesis, Univerzitet u Novom Sadu, Medicinski fakultet u Novom Sadu, 2020. https://www.cris.uns.ac.rs/record.jsf?recordId=113945&source=NDLTD&language=en.
Повний текст джерелаSuccinimides have exhibited various pharmaceutical effects including antiproliferative activity due to an important structural fragment (a pharmacophore) presented in form of two hydrophobic regions and two electron-rich centers. Current development of new drugs involves modifications in structure (type, position and orientation of substituents) and usage of in silico computational programs to predict and optimize pharmacokinetic and safety profile of drug candidates. In early phase of drug development, databases regarding the molecular, pharmacokinetic and toxicological parameters of already tested compounds are used, mathematical models and algorithms are applied for predicting the properties of new molecules and inadequate candidates are eliminated saving time and resources. Determination of physico-chemical properties of the analyzed methyl-ethyl-N-phenilsuccinimide derivatives by software packages; virtual pharmacokinetic and toxicology screening; investigation of retention behavior of the compounds by the reversed-phase HPTLC analysis and calculation of retention constants and their correlation with lipophilicity; in vitro evaluation of antiproliferative activity toward five carcinoma cell lines and normal fetal lung cell line; molecular behavior study on target estrogen receptors by molecular docking and correlation of antiproliferative activity toward ER+ breast carcinoma cell lines and in silico estrogen receptor affinity binding. Retention behavior of 11 newly synthesized succinimide derivatives was determined by reversed phase high performance thin layer chromatography (RP HPTLC) with the application of two-component mixtures water - organic solvent (methanol, acetonitrile or acetone) with adequate volume fractions of the organic modifier. After chromatographic development RM0 and S parameters were calculated. The logarithm of partition coefficient, logP for the analyzed compounds were calculated by different softwares. Physico-chemical properties, pharmacokinetic and toxicological parameters, aquatic toxicity and relative affinity to estrogen receptors were predicted in silico. The affinity toward 4 types of receptors (G-proteine coupled receptors, ion channels, kinase inhibitors, nuclear receptors) were calculated as well. Standard MTT assay was applied to evaluate cytotoxic activities of the analyzed succinimides after cells were exposed. Antiproliferative activity were investigated toward commercial MRC-5, A549, HeLa, MDA-MB-231, MCF-7, HT-29 cell lines and IC50 values were calculated for each compound. MolDock Score that represents energy of binding to estrogen alfa and estrogen beta receptors was determined by molecular docking. Statistically significant linear correlations were determined between the chromatographic retention constants (RM0 and S) and calculated logP, and the best two were obtained in correlation of retention constants with MlogP and ClogP. The examination of RM0 and S influence on pharmacokinetics indicated parabolic dependence of the absorption constant (Ka) and plasma protein binding predictor (PPB) from the observed constants while the volume of distribution (Vd) and the ability to cross the brain blood barrier (logBBB) had linear association with the retention parameters. The toxicity of the analysed compounds evaluated in silico as LD50 on rodents was lower in comparison with the drugs with succinimide structure that are on the market and had parabolic correlation with the RM0 and S values. The experiments indicated that none of the compounds examined had cytotoxic activity toward the healthy lung fibroblast cells. The results of the in vitro assay shown that none of the investigated compounds demonstrated antiproliferative activity toward fetal lung cells. The most potent antiproliferative agents were compounds 6 and 7 toward MCF-7 cell line, and compound 11 toward A549 cell line. Molecular docking shown lower energy for binding to ERA in comparison to ERB.
"Silicon-Based Tandem Solar Cells with Silicon Heterojunction Bottom Cells." Doctoral diss., 2018. http://hdl.handle.net/2286/R.I.48464.
Повний текст джерелаDissertation/Thesis
Doctoral Dissertation Electrical Engineering 2018
Zin, Ngwe Soe Josh. "Miniature silicon solar cells for a tandem cell stack." Phd thesis, 2010. http://hdl.handle.net/1885/150204.
Повний текст джерелаMehanathan, Nishanth. "Oxide Semiconductors for Silicon Tandem Solar Cells." Thesis, 2017. https://etd.iisc.ac.in/handle/2005/4775.
Повний текст джерелаChiang, Chia-Lin, and 江佳霖. "a-Si/a-Si silicon-based tandem solar cells." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/88093182292251398940.
Повний текст джерела國立交通大學
光電工程學系
99
In this article, we used AMPS-1D software to simulate tandem solar cells, and also used high-density plasma chemical vapor deposition (HDPCVD) to deposit a-Si/a-Si tandem solar cells. Comparing the experiment results with the simulation results, they almost have the same trend. Thus, AMPS-1D could be used to predict the experiment results, and reduce the time to try and error. In the simulation, we successfully added tunneling recombination junction (TRJ) to simulate tandem solar cells. This article discussed the influence of four kinds of different material compositions in the a-Si/a-Si tandem solar cells, including n-a-Si/p-a-Si, n-a-Si/p-μc-Si, n-μc-Si/p-μc-Si and n-μc-Si/p-a-SiC. The results showed that n-μc-Si/p-μc-Si is the best choice for the recombination junction (RJ) of a-Si/a-Si tandem solar cells because its low resistance and low mobility gap. Also, we optimized a-Si/a-Si tandem solar cells. When i-layer thickness of top cell and bottom cell were 75nm and 450nm individually, the efficiency could reach 10.384%. In the experiment, we used N&K analyzer to analysis a-Si film, and found that the optical gap was around 1.8eV. Also, Raman spectroscopy and X-ray diffraction were used to analyze μc-Si film. After that, these films deposited a-Si/a-Si tandem solar cells. By changing the parameters of the RJ, we found that decreasing the np junction thickness could reduce the resistance, and varying the np junction doping concentration almost didn’t change the resistance. When increasing the np junction doping concentration, the electric field could enhance and the efficiency could reach higher. With varying the i-layer thickness and the mobility gap of top cell and bottom cell and using p1-a-SiC window layer, the efficiency of a-Si/a-Si tandem solar cell could reach about 8.5%. Finally, we also used AMPS-1D to optimize a-Si/μc-Si tandem solar cells and a-Si/a-SiGe tandem solar cells to predict the experiment trend. By changing i-layer thickness and the mobility gap of top cell and bottom cell, their efficiency could reach 11.198% and 11.777% individually.
"Light Management for Silicon and Perovskite Tandem Solar Cells." Doctoral diss., 2019. http://hdl.handle.net/2286/R.I.55682.
Повний текст джерелаDissertation/Thesis
Doctoral Dissertation Electrical Engineering 2019
Li-WenShen and 沈莉雯. "Investigation performance of silicon and silicon germanium tandem solar cells with distributed Bragg reflector." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/67953754827610871867.
Повний текст джерела國立成功大學
光電科學與工程學系
101
In this work, the titanium dioxide (TiO2) and silicon dioxide (SiO2) were alternately deposited using electron beam evaporation system to form the distributed Bragg reflector (DBR), and the conductive metal pillars prepared by photo-etching were added into the DBR to enhance the conductivity; we use this structure as the intermediate reflector in the silicon and silicon germanium tandem solar cell. Transparent TiO2 and SiO2 could be deposited by electron beam evaporation system in O2 ambient. The 65-nm-thick TiO2 film and 103.5-nm-thick SiO2 film were alternately deposited for 2.5 pairs to form the DBR with high reflectivity of 55% at wavelength of 515 nm. By using this structure as the intermediate reflector in the tandem cell, the short-wavelength light would be reflected to the top cell to be reused. Therefore, the thickness of the active layer of the top cell could be reduced, and the current extraction efficiency would be enhanced consequently. Moreover, we designed and added the patterned conductive aluminum pillars into the insulating DBR to enhance the conductivity. With this conductive intermediate reflector, the conversion efficiency of the tandem solar cell is 1.368%.
Wu, Yiliang. "Towards Highly Efficient Perovskite/c-Si Monolithic Tandem Solar Cells." Phd thesis, 2018. http://hdl.handle.net/1885/162745.
Повний текст джерелаChapa, Manuel Manta. "2D Optimization of Thin Perovskite/Silicon Four-Terminal Tandem Solar Cells." Master's thesis, 2018. http://hdl.handle.net/10362/56426.
Повний текст джерелаYang, Tsai-Ting, and 楊蔡廷. "Fabrication of Microcrystalline Silicon Solar Cells on Nanostructured Back Reflectorsand Micromorph Tandem Solar Cells." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/22033309162440461036.
Повний текст джерела國立臺灣大學
電子工程學研究所
101
The characteristics of a-Si:H and μc-Si:H thin films deposited by HWCVD, including structure, optical and electrical properties, were investigated first to choose the proper deposition parameters for solar cells in this thesis. Then it was introduced to the fabrication of amorphous silicon solar cells. Besides, microcrystalline silicon solar cells were fabricated, and in order to increase the optical path length within the cell by light scattering, the hexagonal silver nanostructures as back reflectors were studied and employed. The best performance of the patterned solar cell was achieved with 25% and 39% enhancement in η and Jsc compared to the flat cell. Finally, the I-V characteristics and external quantum efficiency of amorphous and microcrystalline silicon solar cells are compared. In order to obtain higher open-circuit voltage and wider light absorption spectra, the micromorph tandem solar cell was fabricated. The open-circuit voltage of the best cell could be increased to 865 mV with wider absorption spectra comparing to the single junction a-Si:H solar cell and its efficiency was 2.26%.
Duong, The. "Development of High Efficiency Four-Terminal Perovskite-Silicon Tandems." Phd thesis, 2017. http://hdl.handle.net/1885/134476.
Повний текст джерелаLee, Chien-Ya, and 李建亞. "Development of Tandem Thin-Film Silicon Solar Cells by Plasma-Enhanced Chemical Vapor Deposition." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/87907529828326516057.
Повний текст джерела國立交通大學
光電工程學系
99
In this study, the major objective is to develop silicon based tandem solar cell. There are two directions to achieve this objective: development of a-Si:H / a-Si:H tandem solar cell and deposition and characteristic of the intrinsic μc-Si:H thin film to fabricate a-Si:H / μc-Si:H tandem solar cell. Both a-Si:H and μc-Si:H were deposited by plasma-enhanced chemical vapor deposition (PECVD) system at 27.12 MHz In the part of a-Si:H / a-Si:H tandem solar cell, we varied the thickness of top cell to achieve current matching. Beside, the band-gap profiling is used in buffer grading to improve short-circuit current density (Jsc). μc-Si:H n-layer is applied in tunneling recombination junction (TRJ), it shows no reverse electric field against the built-in voltage of top and bottom cell compared with the TRJ with μc-Si:H n-layer. In the part of intrinsic μc-Si:H thin film deposition, The effect of total flow rate, power and hydrogen dilution ratio on intrinsic μc-Si:H thin film characteristic has been studied. The μc-Si:H thin films were deposited under high pressure and high power condition. The transition region from a-Si:H to μc-Si:H shows a good material characteristic both in X-ray diffraction spectroscopy (XRD) and photosensitivity.
Kuan-HaoChen and 陳冠豪. "Laser-assisted n+ Microcrystalline Silicon Tunnel Junction for a-Si/a-SiGe Tandem Solar Cells." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/70479883711157994735.
Повний текст джерела國立成功大學
微電子工程研究所碩博士班
100
The topic of this research is n+ microcrystalline silicon film deposited at low temperature based on Laser-assisted Plasma-Enhanced Chemical Vapor Deposition system (LAPECVD). Since silane shows extremely high absorption coefficient to CO2 laser at certain wavelength (10.6 um), the CO2 laser beam is applied to the chamber during deposition of silicon film. It makes amorphous silicon be converted into a microcrystalline phase. In application, this research applies the high quality n+ microcrystalline silicon film to the tunnel recombination junction of the tandem solar cell consisting of an amorphous silicon top cell and an amorphous silicon-germanium bottom cell, which expects to improve a whole cell performance by better transmission capability of both top and bottom cell due to the high carrier concentration, high carrier mobility, low resistivity and low optical gap in microcrystalline film. The tunnel junction produced by Laser-assisted Plasma-Enhanced Chemical Vapor Deposition system (LAPECVD) significantly enhances efficiency of tandem solar cell from 6.40% to 8.07%, and increases the fill factor from 0.54 to 0.59.
Hsiao, Min-Wen, and 蕭閔文. "Improvement of Microcrystalline Silicon Single-Junction and Tandem Solar Cells by Optimizing N-Type Microcrystalline Silicon and Silicon Oxide as Doped and Back Reflecting Layers." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/krs8f5.
Повний текст джерела"Modeling Towards Lattice-Matched Dilute Nitride GaNPAs on Silicon Multijunction Solar Cells." Doctoral diss., 2019. http://hdl.handle.net/2286/R.I.54918.
Повний текст джерелаDissertation/Thesis
Doctoral Dissertation Electrical Engineering 2019
Baerhujin, Qiaoke. "Photoluminescence Spectroscopy for Understanding Light Management in Solar Cells." Phd thesis, 2015. http://hdl.handle.net/1885/104493.
Повний текст джерелаMukherjee, Rudra. "Band-matched transport layers and intrinsically stable perovskite solar cells for application to perovskite Si tandem cells." Thesis, 2020. https://etd.iisc.ac.in/handle/2005/5512.
Повний текст джерелаDepartment of Science and Technology, GoI.; Solar Energy Research Institute for India and the UnitedStates (SERIIUS) ; Visvesvaraya PhD Scheme for Electronics & IT program by MeitY, GoI
Chien, Chih-Chun, and 簡誌君. "Study of N-type Microcrystalline Silicon Oxide as Intermediate Reflecting Layer for a-Si:H/a-Si1-XGeX:H Tandem Solar Cells." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/61770225291787579044.
Повний текст джерела國立交通大學
光電工程研究所
102
In this thesis, the thin-film tandem solar cells were prepared by a 27.12 MHz radio-frequency plasma-enhanced chemical vapor deposition (PECVD) system. The bandgap of the amorphous silicon germanium (a-Si1-XGeX:H) can be adjusted by Ge-incorporation. In addition, the a-Si1-XGeX:H material is suitable for the middle or the bottom absorber due to its higher optical absorption in long wavelength region. The a-Si:H / a-Si1-XGeX:H tandem cell was employed due to better utilization of solar spectrum. In order to improve the performance of a-Si:H / a-Si1-XGeX:H tandem solar cell, we introduced a n-type microcrystalline silicon oxide (μc-SiOX:H(n)) intermediate reflecting layer (IRL) between the top and bottom cells to reflect the light back to a-Si:H top cell and reduce the optical loss in a-Si1-XGeX:H bottom cell. Thus, the requirements of μc-SiOX:H(n) as IRL were larger bandgap, lower refractive index and acceptable conductivity. The oxygen content and the conductivity of μc-SiOX:H(n) were the critical factors to affect cell performance. The IRL was optimized to be wider bandgap and acceptable conductivity. In our results, the optimized bandgap of μc-SiOX:H(n) was 2.09 eV and the acceptable conductivity was approximately 10-1 S/cm. In addition, tunneling recombination junction (TRJ) layer was also employed in a-Si:H / a-Si1-XGeX:H tandem cells. As a result, we used μc-SiOX:H(n) layers as IRL to obtain optimum cell efficiencies. Finally, the open circuit voltage (VOC), short circuit current density (JSC), fill factor (F.F.) and conversion efficiency (η) of a-Si:H / a- Si1-XGeX:H tandem cell with the optimized μc-SiOX:H(n) IRL were improved to 1.6 V, 8.23 mA/cm2, 70.3% and 9.26%, respectively.
Chen, Chien-Wei, and 陳建瑋. "Optical simulation of silicon thin-film tandem solar cells and optimization of surface texturing design parameters for improving energy conversion efficiency." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/80953914007056087000.
Повний текст джерела國立臺灣科技大學
光電工程研究所
101
In this work, we used commercial optical simulation software FRED to simulate surface-textured solar cells and to study the optical properties under various conditions. First we studied the scattering efficiency in terms of haze and equivalent optical path length factor as a function of scatter size for four incident light wavelengths: 550nm, 700nm, 900nm and 1200nm.Thus the ideal range in scatter size for silicon thin-film solar cells was obtained. After that, we studied and found a linear relationship between the surface coverage percentage of scatters and the equivalent optical path length factor. Then we carried out the simulations of single-junction and tandem cells respectively and obtained the absorptance of the active layers versus incident light wavelength. The materials used for the single junction and tandem cells were a-Si: H (hydrogenated amorphous silicon) and μc-Si: H (hydrogenated microcrystalline silicon), respectively. Consequently the external quantum efficiency versus incident wavelength, the short-circuit current density and the energy conversion efficiency can be obtained under standard 1-sun AM1.5G solar spectrum. In the single-junction cell simulation, the ideal scatter size chosen was 0.05μm (+ / -5%), and the results showed that the scattering layer improved both the short-circuit current density and the conversion efficiency by about 12%. In the tandem cell simulation, compared to the one without scatters, the two tandem cells with different scatter sizes of III 0.055μm (+ / -5%) and 0.075μm (+ / -5%) helped increase the short-circuit current density by 25.7% and 22.0%, respectively, and both have reached 15% in conversion efficiency.
Tsao, You-Yu, and 曹佑羽. "Development of p-type and n-type Microcrystalline Silicon Oxide as Tunnel-Recombination Junction and Intermediate Reflecting Layer in a-Si:H/a-Si1-xGex:H Tandem Solar Cells." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/ztkacm.
Повний текст джерела國立交通大學
光電工程研究所
103
The a-Si:H/a-Si1-xGex:H tandem cell is an important building block for high-efficiency triple-junction solar cells. To improve the stability of a-Si:H/a-Si1-xGex:H tandem cells against light exposure, the thickness of the a-Si:H top cell needed to be reduced because high-energy photons were mostly absorbed by a-Si:H absorber. The reduction of thickness can be realized by employing intermediate reflecting layer (IRL) between a-Si:H top and a-Si1-xGex:H bottom cell. The IRL typically exhibited lower refractive index than a-Si:H and a-Si1-xGex:H that established a difference in refractive index, reflecting unabsorbed photons back into the a-Si:H top cell. This increased the photocurrent of a-Si:H top cell and thus entailed the possibility to reduce the thickness of a-Si:H. The microcrystalline silicon oxide (μc-SiOx:H) having tunable and reduced refractive index with the incorporation of oxygen is suitable for the application as IRL. However, there is a trade-off between its optical and electrical properties with the incorporation of oxygen. In this thesis, we employed a 27.12 MHz radio-frequency plasma-enhanced chemical vapor deposition (PECVD) system for the preparation of thin-film silicon materials. We found that oxygen incorporation was a key factor to influence the characteristics of μc-SiOx:H(n) IRL. As the oxygen content was increased from 0 at.% to 23 at.%, the E04 increased from 1.89 to 2.20 eV, refractive index decreased from 3.80 to 2.85, and the dark conductivity decreased from 1.41x101 to 6.59x10-1 S/cm. We also found that the employed 23 at.% oxygen content of μc-SiOx:H(n) IRL could reduce the thickness of a-Si:H absorber from 160 to 140 nm leading to decreased Staebler-Wronski effect. Furthermore, the VOC, JSC, FF, and efficiency of a-Si:H/a-Si1-xGex:H tandem cell with the optimized μc-SiOx:H(n) IRL were improved to 1.60 V, 8.32 mA/cm2, 67.1% and 8.82%, respectively.
葉雲源. "A Study of Silicon Tandem Solar Cell." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/03955949104457967228.
Повний текст джерела建國科技大學
電機工程系暨研究所
101
The hydrogenated amorphous Silicon(a-Si:H) and Microcrystalline Silicon thin film solar cell are prepared on ITO glass substrate by electron cyclotron resonance chemical vapor deposition(ECR CVD) system. The optoelectronic characteristics of uc-Si:H deposited by different conditions were analyzed for tandem solar cell. Energy gap of the intrinsic uc-Si:H layer, deposited with SiH4 and H2(the dilution SiH4/SiH4+H2 is 10%) at substrate temperature is 250 ℃ and microwave power is 500 W, is 1.18 eV. Measure the microcrystalline silicon solar cell efficiency of the p-i-n structure by the AM1.5 standard light source, the i-layer on solar cell oper circuit voltage(Voc), short-circuit current(Jsc), fill factor(FF) and energy conversion efficiency(η) have been investigated. The optimized uc-Si:H thin film solar cell with i-layer thickness 1600 nm was found to have Voc is 0.32 V, Jsc is 5.12 mA/cm2, FF(%) is 42.03, η is0.69 %. After carrying on Tandem, Tandem Solar Cell have Voc is 0.96 V, Jsc is 13.9 mA/cm2, FF(%) is 64.82, η is 7.41 %.
Liu, Wei-Lin, and 劉威麟. "Modeling of Amorphous Silicon Tandem Solar Cell." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/84535374286527263749.
Повний текст джерела國立交通大學
光電系統研究所
99
Due to the depletion of energy resources, alternative energy development is the trend of the future. There are many alternative energy sources, and the solar power is a clean, environmentally friendly, renewable and inexhaustible one among them. Among several types of solar cells that are currently with high attention, we chose the amorphous silicon thin-film solar cells for the subject. Thin-film solar cells can be produced on the substrates which could use inexpensive glass, plastics, ceramics, graphite, or metal, and the film only needs a few μm to produce photo-generated voltages. So under the same light-receiving area, thin-film solar cell can significantly use less amount of raw materials than the conventional silicon solar cell. One of the important characteristics of thin film solar cells is flexibility. Its flexible properties can be applied to a wide variety of surfaces even combined with the building and window. Amorphous silicon thin-film solar cell does not surpass its crystalline counterpart for high efficiency. But due to severaladvantages such as mature manufacturing process, flexibility, and combined with the building materials, the amorphous silicon solar cell research is still very popular. This research is focused on features which are different from other solar cells. One is the band tail structure of amorphous silicon materials, and the other is surface roughness. By studying the band tail physical model, we can devise the band tail absorption by tuning its parameters. And another topic is the surface roughness. We create two different surface roughness of the structure. First we use haze formula to simulate the flat structure with haze by ideal situation. On the other hand, we established the real textured surface for simulating in order to achieve the real situation. Finally, we combine the surface roughness and band tail in our simulation structure, and fitting the simulation results to the experimental data to enhance the simulation accuracy. Combination of these two features on a commercially available software is very important to expand our research for greater use. The accuracy of the simulation verified by the fitting process can ensure the validity of our band tail model and texture interface. We hope this application can be useful for design of the next generation thin film solar cell.