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Статті в журналах з теми "Silicon substarte"
Greene, William B., Lyle G. Walsh, Richard M. Silver, Joann Allen, and John C. Maize. "Silicone gel in biological systems." Proceedings, annual meeting, Electron Microscopy Society of America 50, no. 1 (August 1992): 650–51. http://dx.doi.org/10.1017/s0424820100123659.
Повний текст джерелаLi, Jiao, and Jianguo Huang. "A nanofibrous polypyrrole/silicon composite derived from cellulose substance as the anode material for lithium-ion batteries." Chemical Communications 51, no. 78 (2015): 14590–93. http://dx.doi.org/10.1039/c5cc05300e.
Повний текст джерелаJia, Dongling, and Jianguo Huang. "A bio-inspired nanofibrous silicon/carbon composite as an anode material for lithium-ion batteries." New Journal of Chemistry 41, no. 12 (2017): 4887–900. http://dx.doi.org/10.1039/c7nj00032d.
Повний текст джерелаCao, Dao Tran, Cao Tuan Anh, and Luong Truc Quynh Ngan. "Origin of Mosaic Structure Obtained During the Production of Porous Silicon with Electrochemical Etching." Advanced Science, Engineering and Medicine 11, no. 12 (December 1, 2019): 1218–24. http://dx.doi.org/10.1166/asem.2019.2432.
Повний текст джерелаZhang, Yanhua, and Jianguo Huang. "Hierarchical nanofibrous silicon as replica of natural cellulose substance." Journal of Materials Chemistry 21, no. 20 (2011): 7161. http://dx.doi.org/10.1039/c1jm10282f.
Повний текст джерелаYu, Xiao Hua, En He, Yan Qing Hou, and Gang Xie. "Thermodynamic Study on SiHCl3 Hydrogen Reduction System in Siemens Process." Advanced Materials Research 343-344 (September 2011): 156–59. http://dx.doi.org/10.4028/www.scientific.net/amr.343-344.156.
Повний текст джерелаBondarev, A. V., E. T. Zhilyakova, N. B. Demina, and V. Y. Novikov. "Study of Morphology of Sorption Substances." Drug development & registration 8, no. 2 (May 30, 2019): 33–37. http://dx.doi.org/10.33380/2305-2066-2019-8-2-33-37.
Повний текст джерелаHÄCKEL, S., J. DONEIT, A. PINKOWSKI, and W. J. LORENZ. "DIODE CHARACTERISTICS OF YBa2Cu3O7/n- TYPE SILICON CONTACTS." Modern Physics Letters B 02, no. 11n12 (December 1988): 1303–8. http://dx.doi.org/10.1142/s0217984988001284.
Повний текст джерелаLiu, Sikui, Zhanping Zhang, and Yuhong Qi. "Effect of Emulsifier on the Structure and Properties of Waterborne Silicone Antifouling Coating." Coatings 10, no. 2 (February 12, 2020): 168. http://dx.doi.org/10.3390/coatings10020168.
Повний текст джерелаKhan, Madihah, Alyxandra Thiessen, I. Teng Cheong, Sarah Milliken, and Jonathan G. C. Veinot. "Investigation of Silicon Nanoparticle-Polystyrene Hybrids." Alberta Academic Review 2, no. 2 (September 15, 2019): 49–50. http://dx.doi.org/10.29173/aar60.
Повний текст джерелаДисертації з теми "Silicon substarte"
Yu, chien an, and 俞建安. "The oxidation mechanism and the effect of nitrogen implanted silicon substarte." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/33867093547497387673.
Повний текст джерела長庚大學
電機工程研究所
88
The MOSFET gate engineering becomes an increasingly important technology component in the overall transistor design. The demand for gate engineering has been driven by several technical concerns such as boron penetration, thin oxide reliability, and leakage current, etc. Traditional thin oxide growth methods have many problems when scaling down to deep submicron technique. A new fabrication technology for dual-gate CMOSFET’s with multiple gate oxide thicknesses has been proposed using nitrogen implantation into silicon substrates before growing thin thermal oxides. System on a chip (SOC) has gradually become the trend of CMOS technologies, where the circuit architecture is optimized under several constrains including speed, power dissipation, and memory retention time. The multiple-gate-oxide scheme is very helpful to achieve that goal. First, we investigated the oxidation model of gate oxide grown on nitrogen-implanted into Silicon substrate. In our experiment, using various nitrogen implant doses (5×1013 ~1×1015 cm-2) and energies (12,24keV), and different oxidation temperature(800~900℃) were used. We found that the oxidation rate is strongly dependent to the nitrogen concentration at Si and SiO2 interface. According to the profile and peak value shift of SIMS data in various conditions (including oxidation time), we change the parameter of Tsuprem4 thin oxidation model. The oxidation model of nitrogen implanted into silicon will be observed has developed. We present a detailed study of the effect of nitrogen implantation on device electrical characteristics and defect generation. We also observed that the new technology could reduce boron penetration effect and improve the ability of gate control over channel. The low field leakage current is not as good as the data presented in the literature (C. T. Liu et al in 1997), but it does not get worse when compared to the control wafer. The defect induced by nitrogen implantation is cause of oxidation rate variations. By the C-V measurement, at some regime of nitrogen dose (5×1013 ~1×1014 cm-2), the flat-band voltage shift increase with nitrogen implant dose. The dopant-like behavior of nitrogen could come from defect conduction mechanism or B-N bonding. On the other hand, the defect in the silicon induce by nitrogen implantation is not serious after thermal cycle. And the electron trap in the oxide near the interface may be induced by nitrogen incorporation into the oxide.
Nevliudov, I., O. Chala, I. Botsman, O. Klymenko, and M. Vzhesnievskyi. "Automation of Mathematical Modeling of Physical and Technological Processes in the Electronic Devices Manufacture." Thesis, 2021. https://openarchive.nure.ua/handle/document/17949.
Повний текст джерелаКниги з теми "Silicon substarte"
The substance of civilization: Materials and human history from the stone age to the age of silicon. New York: Arcade Pub., 1998.
Знайти повний текст джерелаSass, Stephen L. Substance of Civilization: Materials and Human History from the Stone Age to the Age of Silicon. Skyhorse Publishing Company, Incorporated, 2011.
Знайти повний текст джерелаSass, Stephen L. Substance of Civilization: Materials and Human History from the Stone Age to the Age of Silicon. Skyhorse Publishing Company, Incorporated, 2011.
Знайти повний текст джерелаThe Substance of Civilization: Materials and Human History from the Stone Age to the Age of Silicon. Arcade Publishing, 1999.
Знайти повний текст джерелаЧастини книг з теми "Silicon substarte"
Marsmann, H. C., and F. Uhlig. "Substance Index." In Chemical Shifts and Coupling Constants for Silicon-29, 47–95. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-45278-2_4.
Повний текст джерелаBall, Philip. "7. For all practical purposes: technologies of the elements." In The Elements: A Very Short Introduction, 139–57. Oxford University Press, 2004. http://dx.doi.org/10.1093/actrade/9780192840998.003.0007.
Повний текст джерелаXie, Xiang-Qun, Lirong Wang, Junmei Wang, Zhaojun Xie, Peng Yang, and Qin Ouyang. "In Silico Chemogenomics Knowledgebase and Computational System Neuropharmacology Approach for Cannabinoid Drug Research." In Neuropathology of Drug Addictions and Substance Misuse, 183–95. Elsevier, 2016. http://dx.doi.org/10.1016/b978-0-12-800634-4.00019-6.
Повний текст джерелаJordan, David R., and Stephen R. Klapper. "Soft Tissue Fillers for Facial Aesthetics." In Surgery of the Eyelid, Lacrimal System, and Orbit. Oxford University Press, 2011. http://dx.doi.org/10.1093/oso/9780195340211.003.0038.
Повний текст джерелаChimowitz, Eldred H. "Critical Behaviour in Confined Systems." In Introduction to Critical Phenomena in Fluids. Oxford University Press, 2005. http://dx.doi.org/10.1093/oso/9780195119305.003.0013.
Повний текст джерелаFontani, Marco, Mariagrazia Costa, and Mary Virginia Orna. "The Forerunners of Celtium and Hafnium: Ostranium, Norium, Jargonium, Nigrium, Euxenium, Asium, and Oceanium." In The Lost Elements. Oxford University Press, 2014. http://dx.doi.org/10.1093/oso/9780199383344.003.0012.
Повний текст джерелаТези доповідей конференцій з теми "Silicon substarte"
Hu, Yu-Chen, and Kuan-Neng Chen. "Development and electrical performance of low temperature Cu-Sn/In bonding for 3D flexible substate integration." In 2016 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2016. http://dx.doi.org/10.1109/snw.2016.7578033.
Повний текст джерелаJeong, Seungtaek, Subin Kim, Youngwoo Kim, Shinyoung Park, Hyunwook Park, Joungho Kim, Jae Hak Lee, and Jun Yeob Song. "Design and Analysis of Flexible Interconnects on an Extremely Thin Silicon Substate for Flexible Wearable Devices." In 2019 Joint International Symposium on Electromagnetic Compatibility, Sapporo and Asia-Pacific International Symposium on Electromagnetic Compatibility (EMC Sapporo/APEMC). IEEE, 2019. http://dx.doi.org/10.23919/emctokyo.2019.8893905.
Повний текст джерелаUltarakova, А., N. Lokhova, and A. Yessengaziyev. "Silica removal from waste of ilmenite concentrate pyrometallurgical processing." In Challenges of Science. Institute of Metallurgy and Ore Beneficiation, Satbayev University, 2021. http://dx.doi.org/10.31643/2021.12.
Повний текст джерелаBourell, David L., Phani Vallabhajosyula, Brooke Stevinson, Ssuwei Chen, and Joseph J. Beaman. "Rapid Manufacturing Using Infiltration Selective Laser Sintering." In ASME 2008 9th Biennial Conference on Engineering Systems Design and Analysis. ASMEDC, 2008. http://dx.doi.org/10.1115/esda2008-59084.
Повний текст джерелаWatcharasing, Sunisa, Chularat Wattanakit, Saros Salakhum, Anittha Prasertsab, and Prapoj Kiattikomol. "Synthesis of Zeolites from Production Sand Waste: The Circular Model for Oil and Gas Exploration and Production." In Offshore Technology Conference Asia. OTC, 2022. http://dx.doi.org/10.4043/31420-ms.
Повний текст джерелаGernand, Jeremy M. "Particulate Matter: Fine and Ultrafine — How Emerging Data on Engineered Nanomaterials May Change How We Regulate Worker Exposures to Dust." In ASME 2015 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/imece2015-53056.
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