Дисертації з теми "Silicon photovoltaic module"
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Jensen, Mallory Ann. "Root cause defect identification in multicrystalline silicon for improved photovoltaic module reliability." Thesis, Massachusetts Institute of Technology, 2018. http://hdl.handle.net/1721.1/119344.
Повний текст джерелаCataloged from PDF version of thesis.
Includes bibliographical references (pages 135-145).
To meet climate targets by 2030, manufacturing capacity for photovoltaic (PV) modules must be scaled at 22-25% annual growth rate while maintaining high performance and low selling price. The most suitable material substrate to enable this scale-up is cast multicrystalline silicon (mc-Si) due to its low operating cost and capital requirements compared to other technologies. However, a new form of light-induced degradation was discovered when transitioning mc-Si to the latest high efficiency device architecture. Light- and elevated temperature-induced degradation (LeTID) causes performance to decrease by about 10% (relative) under field-relevant conditions within only four months. In this work, the root cause of LeTID is investigated in three parts: (1) Candidate hypotheses are developed for LeTID; (2) Targeted experiments are carried out toward developing a defect-based description of LeTID; and (3) The basis for a predictive model of LeTID is proposed. Techniques including minority carrier lifetime spectroscopy, synchrotron-based X-ray fluorescence, intentional contamination, and process simulation are employed to probe the defect causing LeTID. The results indicate that LeTID is caused by at least two reactants-hydrogen and one or more reactants that can be modified by high-temperature processing-and that the defect at the point of maximum degradation has recombination characteristics similar to a deep-level donor in silicon. By providing the basis for a predictive model, this work enables both identification of the root cause of LeTID and de-risking of novel solar cell architectures based on mc-Si, allowing assessment of the impact of LeTID on the future of the PV industry. This work also enables development of mitigating strategies for LeTID.
Funding from the National Science Foundation Graduate Research Fellowship Program and grants from the National Science Foundation and the U.S. Department of Energy
by Mallory Ann Jensen.
Ph. D.
Vorasayan, Pongpan. "Spatially resolved measurement of thin film silicon solar modules by laser beam induced current (LBIC) system." Thesis, Loughborough University, 2010. https://dspace.lboro.ac.uk/2134/6652.
Повний текст джерелаKotsedi, Lebogang. "Fabrication and characterization of a solar cell using an aluminium p-doped layer in the hot-wire chemical vapour deposition process." Thesis, University of the Western Cape, 2010. http://etd.uwc.ac.za/index.php?module=etd&action=viewtitle&id=gen8Srv25Nme4_1349_1363785866.
Повний текст джерелаWhen the amorphous silicon (a-Si) dangling bonds are bonded to hydrogen the concentration of the dangling bond is decreased. The resulting film is called hydrogenated amorphous silicon (a-Si:H). The reduction in the dangling bonds concentration improves the optoelectrical properties of the film. The improved properties of a-Si:H makes it possible to manufacture electronic devices including a solar cell. A solar cell device based on the hydrogenated amorphous silicon (a-Si:H) was fabricated using the Hot-Wire Chemical Vapour Deposition (HWCVD). When an n-i-p solar cell configuration is grown, the norm is that the p-doped layer is deposited from a mixture of silane (SiH4) gas with diborane (B2H6). The boron atoms from diborane bonds to the silicon atoms and because of the number of the valance electrons, the grown film becomes a p-type film. Aluminium is a group 3B element and has the same valence electrons as boron, hence it will also produce a p-type film when it bonds with silicon. In this study the p-doped layer is grown from the co-deposition of a-Si:H from SiH4 with aluminium evaporation resulting in a crystallized, p-doped thin film. When this thin film is used in the n-i-p cell configuration, the device shows photo-voltaic activity. The intrinsic layer and the n-type layers for the solar cell were grown from SiH4 gas and Phosphine (PH3) gas diluted in SiH4 respectively. The individual layers of the solar cell device were characterized for both their optical and electrical properties. This was done using a variety of experimental techniques. The analyzed results from the characterization techniques showed the films to be of device quality standard. The analysed results of the ptype layer grown from aluminium showed the film to be successfully crystallized and doped. A fully functional solar cell was fabricated from these layers and the cell showed photovoltaic activity.
 
Peroutka, Tomáš. "Zjišťování klimatických vlivů na degradaci různých typů fotovoltaických článků." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221066.
Повний текст джерелаOwen-Bellini, Michael. "Thermomechanical degradation mechanisms of silicon photovoltaic modules." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/27619.
Повний текст джерелаLewis, Amanda. "Performance of Silicon Heterojunction Cells and Modules in Arctic Applications: Impact of Angle of Incidence, Air Mass, and Spectra on Energy Yield." Thesis, Université d'Ottawa / University of Ottawa, 2020. http://hdl.handle.net/10393/41164.
Повний текст джерелаChoi, Hong Kyu. "Analysis and modeling of the long-term performance of amorphous photovoltaic arrays." Diss., The University of Arizona, 1989. http://hdl.handle.net/10150/184835.
Повний текст джерелаZarmai, Musa Tanko. "Modelling of solder interconnection's performance in photovoltaic modules for reliability prediction." Thesis, University of Wolverhampton, 2016. http://hdl.handle.net/2436/617782.
Повний текст джерелаBERARDONE, IRENE. "Fracture Mechanics of Silicon: From durability of photovoltaic modules to the production of thin film solar cells." Doctoral thesis, Politecnico di Torino, 2016. http://hdl.handle.net/11583/2651712.
Повний текст джерелаDbeiss, Mouhannad. "Mission Profile-Based Accelerated Ageing Tests of SiC MOSFET and Si IGBT Power Modules in DC/AC Photovoltaic Inverters." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT020/document.
Повний текст джерелаIn the case of photovoltaic installations, the DC/AC inverter has the highest failure rate, and the anticipation of its breakdowns is still difficult, while few studies have been done on the reliability of this type of inverter. The aim of this PhD is to propose tools and methods to study the ageing of power modules in this type of application, by focusing on ageing phenomena related to thermo-mechanical aspects. As a general rule, the accelerated ageing of power modules is carried out under aggravated conditions of current (Active Cycling) or temperature (Passive Cycling) in order to accelerate the ageing process. Unfortunately, when applying this type of accelerated ageing tests, some failure mechanisms that do not occur in the real application could be observed, while inversely, other mechanisms that usually occur could not be recreated. The first part of the PhD focuses on the implementation of an accelerated ageing method of the semiconductor devices inside photovoltaic inverters. This is accomplished by analyzing the mission profiles of the inverter’s output current and ambient temperature, extracted over several years from photovoltaic power plants located in the south of France. These profiles are used to study photovoltaic current dynamics, and are introduced into numerical models to estimate losses and junction temperature variations of semiconductors used in inverters, using the cycle counting algorithm “Rainflow”. This method is then performed in two experimental test benches. In the first one, the devices under test are IGBT modules, where the accelerated ageing profile designed is implemented using the opposition method. Moreover, an in-situ setup for monitoring ageing indicators (thermal impedance and dynamic resistance) is also proposed and evaluated. The second bench is devoted to study the ageing of SiC MOSFET power modules. The accelerated ageing test is carried out under the same conditions as for the IGBT modules with more monitored electrical indicators, but this time by disconnecting the semiconductor devices from the inverter. The results obtained allowed to determine several potential ageing indicators of IGBTs and SiC MOSFETs used in a photovoltaic inverter
Dumoulin, Jérémy. "Refroidissement radiatif des cellules et modules solaires par structuration de surface." Electronic Thesis or Diss., Lyon, INSA, 2023. http://www.theses.fr/2023ISAL0005.
Повний текст джерелаPhotovoltaic solar cells and modules heat up considerably under real operating conditions, which is detrimental to their conversion efficiency and their lifetime. However, thermal aspects are still little taken into account, or even completely ignored, in the design of photovoltaic devices. In this context, the objective of this work is to study an innovative strategy to limit overheating: radiative sky cooling. This approach consists of optimising radiative heat exchange in spectral ranges where there is no photovoltaic conversion, in particular in the mid-infrared range to take advantage of the atmospheric transparency window between 8-13 µm. Although promising, many theoretical and experimental obstacles have to be adressed in order to fully grasp the opportunities and challenges of radiative sky cooling for photovoltaics. Using an in-house developped electrical and thermal model, the theoretical benefit that radiative sky cooling can bring to photovoltaic devices has been quantified. The ideal emissivity profile was also determined. More generally, guidelines and orders of magnitude were established for a wide range of devices. The experimental pathways for achieving the ideal emissivity profile have been unveiled. For crystalline silicon module, it appears that the most promising approaches relate to the engineering of the air-glass interface. In this respect, an optical structure based on a dielectric multilayer is proposed and analysed. To guide future studies, a set of numerical and methodological tools that enable to identify, design, and quantify the benefit of optical structures has been developed. In addition to these specific results for radiative sky cooling, an opto-electro-thermal model of silicon cells is presented. This model aims at predicting the performance under real operating conditions directly from the materials and the architecture of the cell. In particular, we show how this model paves the way to further increase photovoltaic electricity production through more thermally aware engineering
Varache, Renaud. "Development, characterization and modeling of interfaces for high efficiency silicon heterojunction solar cells." Thesis, Paris 11, 2012. http://www.theses.fr/2012PA112279/document.
Повний текст джерелаThe interface between amorphous silicon (a-Si:H) and crystalline silicon (c-Si) is the building block of high efficiency solar cells based on low temperature fabrication processes. Three properties of the interface determine the performance of silicon heterojunction solar cells: band offsets between a-Si:H and c-Si, interface defects and band bending in c-Si. These three points are addressed in this thesis.First, an analytical model for the calculation of the band bending in c-Si is developed. It assumes a constant density of states (DOS) in the a-Si:H band gap. The influence of most parameters of the structure on the band bending is studied: band offsets, DOS in a-Si:H, interface defects, etc. The presence of quantum confinement at the interface is discussed. Analytical calculations and temperature dependent planar conductance measurements are compared such that the band offsets on both (p)a-Si:H/(n)c-Si and (n)a-Si:H/(p)c-Si can be estimated: the valence band offset amounts 0.36 eV while the conduction band offset is 0.15 eV. In addition, it is shown that the valence band offset is independent of temperature whereas the conduction band offset follows the evolutions of c-Si and a-Si:H band gaps with temperature. A discussion of these results in the frame of the branch point theory for band line-up leads to the conclusion that the branch point in a-Si:H is independent of the doping.Then, analytical calculations are developed further to take into account the real solar cell structure where the a-Si:H/c-Si structure is in contact with a transparent conductive oxide and an undoped buffer layer is present at the interface. Measurements of the planar conductance and of the interface passivation quality are interpreted in the light of analytical calculations and numerical simulations to open a way towards a method for the optimization of silicon heterojunction solar cells. It is particularly shown that a trade-off has to be found between a good passivation quality and a significant band bending. This can be realized by tuning the buffer layer properties (thickness, doping), the TCO-contact (high work function) and the emitter (defect density and thickness). Interestingly, an emitter with a high DOS leads to better cell performances.Finally, a new type of interface has been developed, that was not applied to heterojunction solar cells so far. The c-Si surface has been oxidized in deionized water at 80 °C before the (p)a-Si:H emitter deposition such that (p)a-Si:H/SiO2/(n)c-Si structures were obtained. A tunneling current model has been developed, implemented in the 1D numerical device simulator AFORS-HET and used to study the effect of a wide band gap interfacial layer (as it is the case for SiO2) on cell performance: the fill-factor and the short-circuit current are dramatically reduced for thick and high barriers. However, a SiO2 layer has only little impact on optical properties. Fabricated samples show a passivation quality halfway between samples with no buffer layer and with an (i)a-Si:H buffer layer: this is explained by the presence of a negative fixed charge in the oxide. The band bending in (n)c-Si is higher with an oxide layer than with an (i)a-Si:H buffer layer. Solar cells demonstrate that this new concept has the potential to achieve high power conversion efficiencies: for non-optimized structures, an open-circuit voltage higher than 650 mV has been demonstrated, while the oxide does not seem to create a barrier to charge transport
Alves, rodrigues Luis Gabriel. "Design and characterization of a three-phase current source inverter using 1.7kV SiC power devices for photovoltaic applications." Thesis, Université Grenoble Alpes (ComUE), 2019. http://www.theses.fr/2019GREAT030.
Повний текст джерелаClassically, the energy conversion architecture found in photovoltaic (PV) power plants comprises a multitude of solar arrays delivering a maximum voltage of 1kV followed by a step-up chopper connected to a three-phase voltage source inverter. This two-stage conversion system (DC/DC + DC/AC) is then connected to the MV grid through a LV/MV transformer. In order to simplify the PV systems, this research work focuses on the study and implementation of a DC/AC topology employing a single conversion stage: the three-phase current source inverter (CSI). Although relatively simple, the CSI presents as major drawback the conduction losses. To deal with this problem, wide-bandgap silicon carbide (SiC) semiconductors are used, which allows to efficiently convert energy (η> 98.5%) while keeping a relatively high switching frequency (several tens of kHz). Nonetheless, since the available power semiconductor modules on the market are not compatible with the CSI, a novel 1.7kV SiC-based module is developed in the context of the thesis. Thus, the dynamic characterization of the new SiC device is carried out and serves as a basis for the design of a 60kW Current Source Inverter prototype. Finally, the inverter’s semiconductor efficiency is evaluated through a calorimetric method, confirming the ability of the topology to operate at higher switching frequencies. At the present time, little research has been conducted on the CSI implementation with SiC devices. The originality of this work lies mainly in the design, characterization and implementation of the new SiC power module adapted to this well-known inverter topology
Andersson, Stephanie. "Återvinning av solcellsmoduler i Sverige : En undersökning av de energitekniska, ekonomiska och politiska förutsättningarna." Thesis, Mälardalens högskola, Akademin för ekonomi, samhälle och teknik, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:mdh:diva-53341.
Повний текст джерелаPokorný, Marek. "Charakterizace vlastností fotovoltaického systému." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2011. http://www.nusl.cz/ntk/nusl-219073.
Повний текст джерелаŠimonová, Lucie. "Distribuční soustava Kypru - realizovatelnost obnovitelných zdrojů a přenos energie." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2011. http://www.nusl.cz/ntk/nusl-219218.
Повний текст джерелаLiu, Ta-ching, and 劉大慶. "Study of Efficiency Comparison for CIGS and Multicrystalline Silicon Photovoltaic Module." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/pmqj2a.
Повний текст джерела正修科技大學
電機工程研究所
101
Green energy is developing in Taiwan as result of the shortage of energy on the world, raising price of crude oil and global warming climate. Efficiency using solar energy is a common dream for scientists. Therefore, the first generation, the second generation and the third generation photovoltaic (PV) cell are developed rapidly. This thesis focuses on CIGS solar cell efficiency. In the same condition like as irradiation, elevation and environment temperature to evaluate the efficiency difference of CIGS and poly crystal silicon PV module. The numerical data of CIGS is recorded by monitoring software to analysis and to compare with poly crystal silicon PV module.
Wei-ChenLee and 李瑋宸. "Experimental and Numerical Analysis of the Performance of Multi-crystalline Silicon Photovoltaic Module by Adding Cooling Fins." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/48501895564391372595.
Повний текст джерела國立成功大學
機械工程學系碩博士班
101
In the light of former studies, the elevation of the PV temperature declines solar to electrical energy conversion efficiency by 0.4 - 0.5 (%.K-1) for crystal silicon PV when it rises above the characteristic power conversion temperature of 25℃. Therefore, this research decreases the operating temperature of module to improve its performance by changing materials of ethylene vinyl acetate and adding the cooling fins. Numerical and experimental methods are used to get the temperature of central base sheet and each layer, output power, current, voltage, conversion efficiency, relative power, the effect of fin’s radiation and the influence of force convection under (1) low irradiance; (2) nominal operating cell temperature (NOCT); (3) standard test condition (STC) and (4) the solar module with cooling fins. In the research, the main control factors are the material of rear EVA, the conductivity of module of back sheet, the emissivity and the numbers of fin. The results show that the module’s temperature and output power increases when the irradiance elevates, but the conversion efficiency of module decreases oppositely. The change of EVA can increase the incident light of cell. With the high conductivity of back sheet, the concentrative heat of cell originally can be spread into the frame. Better results are found with four straight fins in this research, and the high emissivity of fin can elevate radiative heat of fin. Therefore, the above improvements can elevate the relative power and performance of the module. Finally, in order to understand the effect of forced convection and radiation, the performance of the best module with high emissivity cooling fins and the modules with different emissivity cooling fins blown by fan are compared in this study. The results show that the effect of radiation can be almost ignored if the forced convection is taken into consideration.
I-HsiangFang and 方翊翔. "Experimental and Numerical Analysis of the Performance of Multi-crystalline Silicon Photovoltaic Module by Changing Materials of Ethylene Vinyl Acetate and Back Sheet." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/97977631622691779239.
Повний текст джерела國立成功大學
機械工程學系碩博士班
100
According to former studies, the elevation of the PV temperature reduces solar to electrical energy conversion efficiency by 0.4 - 0.5 (%.K-1) for crystal silicon PV when it rises above the characteristic power conversion temperature of 25℃. Therefore, the performance of module is improved by changing materials of ethylene vinyl acetate and back sheet to decrease the operating temperature of module in this study. Under (1) low irradiance; (2) nominal operating cell temperature (NOCT) and (3) standard test condition (STC), numerical and experimental methods are used to get (1) the central back sheet’s temperature and each layer’s temperature; (2) output power, current and voltage; (3) conversion efficiency and relative power; (4) the effect of back sheet’s radiation; (5) the percentage of each thermal mechanism; (6) contributions of factors. Then, the above results will be verified through the full-scale experiments. Findings from this research will be applied in industry. In the research, the main control factors are the material of rear EVA and the back sheet’s conductivity and emissivity. The results show that the module’s temperature and output power increase when the irradiance elevates, but the conversion efficiency of module decreases. The high emissivity of module’s back sheet can double dissipate the radiative heat from the back sheet. The concentrative heat of cell can be spread into the frame by the high conductivity of back sheet. The white rear EVA can increase the amount of incident light into cell. Therefore, these three mechanisms can improve operating temperature and the amount of incident light into cell and then elevate the relative power and performance of the module. Finally, although the gain value of module’s performance has a gap between the steady-state in-lab experiment and the transient full-scale experiment, their trends are the same. Consequently, if the intersections among factors can be improved, the compound effect can tend toward the linear superposition of each factor and then the maximum relative power can be achieved.
Lizardo, Elias Suazo, and 利薩爾. "Economic feasibility for recycling crystalline silicon photovoltaics modules." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/2xqp2a.
Повний текст джерела國立中央大學
國際永續發展碩士在職專班
106
The goal of this thesis is to assess the economic feasibility of a recycling facility for crystalline silicon based PV modules. Two cases are described in this study, the first one is the building up and operating a recycling facility located in the north region of Italy and the second one is located in the north region of Honduras. This thesis utilizes an economic model called the discounted cash flows in order to assess the economic feasibility of the recycling facilities. A sensitivity analysis was applied in order to identify the range of parameters values within which a project can remain economical viable. The sensitivity analysis was applied to the critical values that affect the viability of the project (Investment, collection, process and conferred cost, as well to the prices of the material chosen to be recycled). The discounted cash flow method results shows for the first case the unprofitability of the recycling plant located in Italy in the entire scenarios including the sensitivity analysis. In the other hand the results from the economic method for the second case, described the profitability of the recycling plant located in Honduras, revenues are obtained in the fourth year of operation. The results of the sensitivity analysis for the second case confirm the feasibility of the project obtaining revenues from the facility in the third year as the best scenario
Hsieh, Ming-Yen, and 謝明諺. "Research of Mono-silicon and Poly-silicon Photovoltaic Modules Tested in Real Environment." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/67088983258969810645.
Повний текст джерела國立中央大學
光電科學與工程學系
101
As the decreasing of energies such as fossil fuel, the energy price is getting higher herewith serious issues of pollution, the greenhouse effect, and climatic anomalies. On March, 2011, the Fukushima Daiichi nuclear disaster in Japan injured thousands of people to increase the safety concern of nuclear. Besides, the treatment of nuclear waste is still a big problem. Renewable energies such as solar power, wind power, and geothermal power, are good solutions to substitute those non-renewable resources. For the lack of natural resources in Taiwan, the renewable resources are more important. Solar power is the best solution since it exits everywhere. The fabrication technology of solar cells is similar with the one of semiconductors, which is mutual in Taiwan. In this research, a mono-crystalline silicon photovoltaic system and a poly-crystalline silicon photovoltaic system were build to analyze their performances and connected to commercial DC-to-AC (D/A) inverters in real environment. These D/A inverters were developed with maximum power point tracking (MPPT) function. The AC power generated from the photovoltaic systems was transferred from DC powers to the on-grid system directly. A LabView program was developed to record the generated powers and the temperatures of solar modules. The final results were calculated including the data of solar irradiance provided by the Department of Atmospheric Science of National Central University. In the analysis we can understand the relationships between photovoltaic module temperature, solar irradiance, and efficiency.
Γεωργίτσας, Βασίλειος. "Βέλτιστες ηλεκτρικές παράμετροι φωτοβολταϊκών πλαισίων για γήινες και διαστημικές εφαρμογές". Thesis, 2011. http://nemertes.lis.upatras.gr/jspui/handle/10889/4707.
Повний текст джерелаThe purpose of this thesis, is the theoretical study of solar modules used in space applications, together with the description of their technology and operation, and the historical development in recent decades from 1950 to today. In this context we analyzed the solar arrays for space applications, the requirements of materials for solar cells and the common types of semiconductor materials for modules, such as silicon Si and gallium arsenide GaAs. Initially, we studied what external factors affect the performance of solar cells in space and also the effects of space radiation and temperature. Further, we described the advanced silicon solar cells and the high-efficiency amorphous silicon solar cells, that improve the energy efficiency significant. For the optimal solution for space applications, we then analyzed thoroughly the most widely used in space multijunction MJ solar cells and their design, the performance parameters and the effects of external factors. To summarize the theoretical study, we studied the design of the solar array in space and the design requirements for reliable performance and longevity. Finally, there are many ways we can improve the performance of space solar cells. The most promising methods are those of metamorphic «metamorphic» and reverse metamorphic «inverted-metamorphic» solar cells compared to the classic "latticed matched" solar cells and will continue to be in the forefront for decades to come. Additional to the subject of this thesis, is the experimental study of the behavior of a photovoltaic monocrystalline silicon module m-Si 80 W peak power at real operation conditions under the influence of various external factors such as incident radiation, temperature and tilt. In order to estimate the energy efficiency we took measurements with the help of PVPM in the year 2009 - 2010. Specifically, it consists of two measurement periods: a) April 2009 to July 2009, when measurements were taken every hour for all angles 0, 10, 20, 30, 40, 50, 60, 70, 80 every week with the help of special structure and b) August 2009 to March 2010, when measurements were made all day, every five minutes, each week with a notebook in a particular inclination 38ο, corresponding to the latitude of the region of Patras. All these help us to gain a comprehensive idea of their behavior and performance of our photovoltaic modules. We also observed variation in the results in comparison with CRES databases due to the fact that we could not continuously conduct every day of the year. Using PVsyst we tried to verify our experimental results and find the best solutions for the tilt and orientation of the PV modules. With the program PVsyst we tried to simulate the performance of monocrystalline silicon solar cell using computational frameworks and to compare them with the experimental results. Finally it was also simulated with the data given from the database of the program Meteronorm 6.1 so as to compare both methods.
Chen, Long, and 陳龍. "Measurement and Analysis of the Crystal-silicon and CIGS Photovoltaic Modules in the Real Environment." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/05277458706807017359.
Повний текст джерела國立中央大學
光電科學與工程學系
103
Three different kinds of photovoltaic modules, mono-crystalline silicon, poly-crystalline silicon and CIGS solar cells were chosen conversion efficiency to measure the outdoor temperature, efficiency and light intensity in order to understand their properties and study the physical mechanism of internal differences. A CIGS thin-film solar cell module placed on a biaxial tracker was setup to compare the efficiency with a fixed module and to analyze if the generating power capacity can cover the cost of the tracker or not. In order to figure the series of questions, the three techniques of solar cell modules were installed in the roof of a building in Chungli, Taoyuan. Based on the analysis of the measured data in the real environment, the relationships of the weather conditions with the specifications, the physical mechanisms of the mono-crystalline silicon, poly- crystalline silicon and the CIGS photovoltaic modules can be achieved. Finally, we found that the highest efficiency of the mono-crystalline silicon and the CIGS photovoltaic modules is 13.29% and 8.04%, respectively. The temperature coefficients of the mono-crystalline silicon, the poly-crystalline silicon and the CIGS photovoltaic modules are βMono-Si=(0.0458°C-1) > βPoly-Si=(0.0446°C-1) > βCIGS=(0.0285°C-1). The irradiance coefficients are γPoly-Si=(0.1212) > γCIGS=(0.1034) > γMono-Si=(0.0683). And the average energy increasing ratio with the tracker is 1.32
"26+ Year Old Photovoltaic Power Plant: Degradation and Reliability Evaluation of Crystalline Silicon Modules - South Array." Master's thesis, 2012. http://hdl.handle.net/2286/R.I.15940.
Повний текст джерелаDissertation/Thesis
M.S.Tech Technology 2012
"26+ Year Old Photovoltaic Power Plant: Degradation and Reliability Evaluation of Crystalline Silicon Modules - North Array." Master's thesis, 2013. http://hdl.handle.net/2286/R.I.18002.
Повний текст джерелаDissertation/Thesis
M.S.Tech Electrical Engineering 2013
WU, SIN-ZE, and 吳欣澤. "Test of Light Induced Degradation for Normal Mono/Poly PV Modules and Passivated Emitters Rear Cell Mono/Poly Silicon Photovoltaic Modules." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/89184189504959765409.
Повний текст джерела高苑科技大學
電機工程研究所
104
Abstract In our discussion of light induced degradation for normal mono/Poly modules and passivated emitter and rear cell mono/poly crystalline silicon solar photovoltaic modules, we found that two different process technology for the p-type solar module on load and unload system had different light induced degradation. When the modules were exposured to the sun over 80 KWh/m² , the power was no clear attenuation and gradually stabilized. According to the measurement of maximum power and electroluminescent fluorescent, we found that the passivated emitter and rear cell mono/poly modules of light induced degradation is more clear than the normal mono/Poly modules. It should be a relationship with boron and oxygen atom content of the passivated emitter and rear cell mono/poly modules. Sunlight will result in the boron-oxygen complexes increasing and the maximum power decreasing. Key Words: P-type mono/poly crystalline silicon solar photovoltaic modules, Passivated Emitter and Rear Cell mono/poly crystalline silicon solar photovoltaic modules, light induced degradation
Prentice, Justin Steven Calder. "The development of a one-dimensional numerical simulation of thin-film photovoltaic devices, and an investigation into the properties of Si:H solar cells." Thesis, 2012. http://hdl.handle.net/10210/6588.
Повний текст джерелаA one-dimensional numerical simulation of photovoltaic (PV) cells has been written, and has been designated RAUPV2. An algorithm for determining the optical generation rate profile, taking into account multiple internal reflections in a multilayer cell has been developed. A method which enables realistic boundary values to be calculated, using RAUPV2 itself, has been developed. This method allows all three boundary values (', Fn and Fp) at each surface, to be determined, without the need to specify any additional input parameters. A comprehensive set of input parameters for aSi:H PV cells has been established, in consultation with the literature. Dangling-bond theory has been described and input parameters for dangling-bond defects have been presented. The effect of surface states in the p-layer on the contact potential at the TCO/p interface has been investigated. It was found that there is an intimate relationship between the contact potential and the parameters pertaining to the surface states. A simple method has been demonstrated, which has allowed RAUPV2 to reproduce the J-V curve of an existing aSi:H PV cell. The method requires that only the dangling-bond concentration in the i-layer and the contact potential at the Sn02/P interface needs to be adjusted. Once the J- V curve had been generated, the simulation results were used to characterise the empirical cell, in both thermodynamic- and steady-state equilibrium. This simulated cell was designated the realistic cell. The effect of asymmetries in the input parameters, under carrier band mobility interchange, on the performance of p-i-n cells has been investigated. The results indicate that, while asymmetries in the gap state distributions do give rise to asymmetrical behaviour in the J- V curve, the effect is slight, and it is the positional asymmetry of the optical generation profile that is mostly responsible for the observed asymmetry in the J- V curve under mobility interchange. An investigation of the limiting carrier effect has led to the conclusion that, in a p-i-n aSi:H cell under forward bias, the electron is the limiting carrier. This has been explained by appealing to the form of the optical generation profile, since most electron-hole pairs (EHPs) are generated near the front of the cell, and it is electrons that must be collected at the back contact. Investigations of the n-i-p aSi:H cell, under forward bias, have shown the hole to be the limiting carrier. It was found that the introduction of positional symmetry into the optical generation rate profile greatly reduced the limiting carrier effect, and it was concluded that the limiting carrier effect arises due to the asymmetries in the material parameters of the cell, particularly the _ positional asymmetry of the optical generation profile. It was observed that the nature of the optical generation profile actually plays an important role in determining the identity of the limiting carrier, in a p-i-n cell. The same effect was not observed in the n-i-p cell. The effective carrier collection length has been defined, and it was seen that the limiting carrier possesses the larger effective collection length. The effect of boron and phosphorous profiling of the i-layer was studied. It was found that boron profiling led to a decrease in cell performance, while phosphorous profiling improved cell performance. It was found that there was a P concentration at which cell performance peaked. The dependence of the spectral response of the realistic cell on device length L, was investigated, showing a general improvement in the spectral response as L was decreased. The spectral response has been interpreted in a novel way. It was assumed that the form of the monochromatic optical generation profiles in the vicinity of the peak in the spectral response represented optimal generation profiles. These profiles were subjected to a linear transformation, such that their form was preserved but that their integrated value was the same as that of the realistic optical generation profile, under global AM1.5 illumination. Using these transformed optical generation profiles, J- V curves were obtained. The maximum power output PM of these J- V curves was seen to exhibit a maximum some 17% greater than that of the realistic cell with a realistic optical generation profile. The spectral response of the phosphorous profiled cell was obtained. In a manner similar to that for the non-P profiled cell, the optimal generation profile was found. The PM for this profile was found to be 7.86mWcm -2 , considerably larger than the 5.60mWcm-2 for the phosphorous profiled cell with a realistic optical generation profile. The effect on the simulation output of variations in numerous dangling-bond defect input parameters has been investigated. It was found that the energy position and concentration of the doped layer defects need not be known to a high degree of precision. On the other hand, it was found that the energy position of the i-layer defects, the standard deviation of the defect distributions, and the defect carrier capture cross-sections, do need to be known with certainty.
Bönisch, Paul. "Modellierung und Untersuchung der Schmelzströmung für die gerichtete Erstarrung in der industriellen Photovoltaik." 2017. https://tubaf.qucosa.de/id/qucosa%3A34340.
Повний текст джерелаPassos, Paulo Frederico Costeira de. "Desenvolvimento de conversores de potência com interface de painéis fotovoltaicos para smart homes." Master's thesis, 2019. http://hdl.handle.net/1822/72204.
Повний текст джерелаA microgeração e a utilização de veículos elétricos estão cada vez mais presentes no quotidiano e representam dois importantes fatores no caminho do desenvolvimento das smart grids e smart homes, que visam a gestão dos dispositivos eletrónicos ligados à rede elétrica ou à habitação. Assim sendo, a necessidade do desenvolvimento de novas tecnologias, assim como a otimização de topologias já existentes, no sentido de melhorar o carregamento de baterias dos veículos elétricos, a produção de energia a partir de fontes de energia renováveis e o melhoramento da qualidade da energia elétrica, é cada vez mais relevante. No âmbito desta dissertação pretende-se desenvolver um equipamento que surge como uma solução para a realização da interface entre veículos elétricos, painéis fotovoltaicos e a rede elétrica, além de compensar, dinamicamente, problemas de qualidade da energia elétrica. A solução tradicional utiliza dois conversores de potência para realizar a interface entre o veículo elétrico e a rede elétrica e mais dois conversores de potência para a interface da fonte de energia renovável e a rede elétrica). Esta topologia apresenta uma desvantagem no carregamento direto das baterias do veículo elétrico a partir da fonte de energia renovável, pois requer o uso de quatro conversores de potência e a rede elétrica como intermediários. Para colmatar esta desvantagem, a configuração adotada utiliza apenas um conversor CA-CC e um barramento CC comum aos dois conversores CC-CC que interligará os três conversores. Assim, obtêm-se as vantagens de utilizar apenas um conversor para realizar a interface do carregador do veículo elétrico e a fonte de energia renovável com a rede, a possibilidade de realizar o carregamento das baterias diretamente dos painéis fotovoltaicos, sem usar a rede como intermediário, e ainda a contribuição para a melhoria dos problemas de qualidade de energia. Nesta dissertação, foi desenvolvido um conversor CA-CC (em colaboração com outra dissertação), o mais reduzido possível (usando SiC - Silicon Carbide, como semicondutores controlados), variando assim as suas caraterísticas de forma a se obter a redução de tamanho e a realizar a interface com os outros dois conversores de potência (CC-CC). Após um estudo cuidado do estado da arte, foi desenvolvido um modelo computacional em PSIM e foi desenvolvido um protótipo laboratorial (conversor CA-CC e CC-CC), onde o conversor CC-CC realiza a interface com a fonte de energia renovável (com algoritmo de controlo de maximum power point tracker (MPPT)). Com recurso ao sistema desenvolvido foram obtidos resultados experimentais que comprovam a solução adotada.
Microgeneration and the use of electric vehicles are increasingly present in our daily lives and they represent two major factors in the development of smart grids and smart homes, which aim to manage electronic devices connected to the power grid or to the house. Therefore, the need to develop new technologies as well as improving the existing ones in order to improve battery charging of electric vehicles, the production of energy from renewable power sources and the improvement of energy quality is increasingly relevant. This dissertation intends to develop an equipment that emerges as a solution for the interface between electric vehicles, photovoltaic panels and the power grid as it also dynamically compensates for problems of power quality. The traditional solution uses two power converters to interface between the electric vehicle and the power grid (one ac/dc converter and another dc/dc converter) and two more power converters for the renewable power source (one ac/dc converter and another dc/dc converter). This traditional topology has a disadvantage in the direct charging of the electric vehicle batteries from the renewable energy source as it requires the use of four power converters and the power grid as intermediates. To overcome this drawback, the adopted configuration uses only one ac/dc converter and one common dc link to interface the two dc/dc converters with the ac/dc converter. This gives the advantages of using only one converter to interface the electric vehicle charger and the renewable power source with the power grid. It also allows the ability to charge the batteries directly from the photovoltaic panels without using the power grid as an intermediary further contributing to improve issues related to the quality of power. Through this dissertation, when combined with another dissertation, an AC/DC converter, compacted as much as possible will be developed, thus varying its characteristics in order to obtain the size reduction. This will interface with the other two power converters (dc/dc). Posteriorly and individually, a dc/dc converter will be developed that will interface with the renewable power source, where a maximum power point tracker (MPPT) control algorithm is applied in order to extract as much power as possible from the photovoltaic panel.
Este trabalho de dissertação está enquadrado no projeto de IC&DT “newERA4GRIDs – New Generation of Unified Power Conditioner with Advanced Control, Integrating Electric Mobility, Renewables, and Active Filtering Capabilities for the Power Grid Improvement”, financiado pela Fundação para a Ciência e Tecnologia, com a referência PTDC/EEI‑EEE/30283/2017.
Este trabalho de dissertação está enquadrado no projeto de IC&DT “DAIPESEV – Development of Advanced Integrated Power Electronic Systems for Electric Vehicles”, financiado pela Fundação para a Ciência e Tecnologia, com a referência PTDC/EEI EEE/30382/2017.
Συγκρίδου, Δήμητρα. "Μετρήσεις χαρακτηριστικών ρεύματος τάσης φωτοβολταϊκών πλαισίων μονοκρυσταλλικού Si υπό πραγματικές συνθήκες". Thesis, 2009. http://nemertes.lis.upatras.gr/jspui/handle/10889/2562.
Повний текст джерелаThe aim of this diploma thesis is to take a better look at the operation of a monocrystalline silicon photovoltaic module and through the numerical data of measurements and the calculations, to come to a conclusion about how the operation in real conditions can influence his produced power. Measurements of current and tendency have been made in the area of the department of Electrical and Computer Engineering using a monocrystalline silicon photovoltaic module of peak power 80 W. The measurements took place once a week for about a year (2008-2009) and our goal was to obtain measurements under various conditions of radiation and temperature and for some angles of bent so that we acquire a completed picture of its energy behavior. During the measurements we changed a variable load, in order to form the characteristic curve of current and tendency of the module and we also noted down the radiation, the environmental, the cell and the back side temperature of the module, as well as the bent of placement. Moreover, we checked how a possible natural shading from an adjacent object influences the characteristic I-V curve, and as a result the efficiency of the module. The orientation of the module was always South, in order to gain more hours of sunlight, since Greece is a country of the northern hemisphere. While processing the measurements, we found the optimal bent of placement per season for the module and we saw that the radiation affects positively its efficiency contrary to the cell temperature that decreases the efficiency when increased. Finally, we compare the electrical specifications in laboratorial environment that the constructor gives, with the measurements in order to realise the losses that we have when the monocrystalline module functions in real conditions.