Готові списки джерел за темами / Silicon photovoltaic module

Добірка наукової літератури з теми "Silicon photovoltaic module"

Автор: Grafiati
Опубліковано: 6 вересня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Зміст

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "Silicon photovoltaic module".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "Silicon photovoltaic module"

1

Kafui, Atsu Divine, István Seres, and István Farkas. "Efficiency Comparison of Different Photovoltaic Modules." Acta Technologica Agriculturae 22, no. 1 (March 1, 2019): 5–11. http://dx.doi.org/10.2478/ata-2019-0002.

Повний текст джерела
Анотація:
Abstract Solar photovoltaic power generation capacity is rising continuously as a result of various regional, sub-regional renewable energy policies and the impact of technology development, as well as the increasing environmental concerns. Characteristics of photovoltaic modules are provided by manufacturers after they have been tested indoors under standard test conditions. These parameters may vary under exterior conditions. It is thus imperative to establish the quantity of the energy produced by photovoltaic modules under real operation conditions. This study sought to assess the performance of different kinds of photovoltaic module technologies in the city of Gödöllő, Hungary, and ascertain the behaviour of the modules under real outdoor conditions. Modules include amorphous silicon (a-Si), monocrystalline silicon (mc-Si), polycrystalline silicon (pc-Si), transparent monocrystalline silicon module (mc-Si). Measurement of the module characteristics was performed and various meteorological parameters were obtained. Performance parameters such as performance ratio and efficiency are given and analysed. Module temperature was estimated and evaluated in comparison with experimental values. Energy conversion rates of the modules were determined as 9.4%, 4.4%, 10.3%, 8.2% and 10.4% for mc-Si module transparent glass (165 Wp), a-Si module (glass 40Wp), pc-Si module (105 Wp), pc-Si module (60 Wp) and mc-Si (PV-T 180 Wp), respectively. Under the given outdoor conditions, the highest average performance ratio of 85.2% was obtained for the mc-Si module (transparent glass, 165 Wp), exhibiting the best performance, while pc–Si module (60 Wp) showed the least average performance ratio of 71.8%.
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Ali, Hafiz, Mubashar Mahmood, Muhammad Bashir, Muzaffar Ali, and Aysha Siddiqui. "Outdoor testing of photovoltaic modules during summer in Taxila, Pakistan." Thermal Science 20, no. 1 (2016): 165–73. http://dx.doi.org/10.2298/tsci131216025a.

Повний текст джерела
Анотація:
An experimental study has been carried out to measure the performance of commercially available photovoltaic modules during summer months in the climate of Taxila, near the capital of Pakistan. The modules used in the study are monocrystalline silicon (c-Si), polycrystalline silicon (p-Si) and single junction amorphous silicon (a-Si). The analysis has been focused on the measurement of module efficiency, performance ratio and temperature of each module at actual operating conditions using outdoor monitoring facility. The measured results are compared with the already published data of peak winter month at the same site. Overall, the monocrystalline module showed high average module efficiency while amorphous silicon module was better in term of average performance ratio. Furthermore, the module efficiency and performance ratio has shown decreasing trend with increase of module temperature. It was found that modules have much higher temperature in summer months (about 20?C higher) and showed low efficiency and performance ratio than peak winter month. The average ambient temperature varied from 18.1?C to 38.6?C from winter to summer.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Ali, Hafiz, Muhammad Zafar, Muhammad Bashir, Muhammad Nasir, Muzaffar Ali, and Aysha Siddiqui. "Effect of dust deposition on the performance of photovoltaic modules in Taxila, Pakistan." Thermal Science 21, no. 2 (2017): 915–23. http://dx.doi.org/10.2298/tsci140515046a.

Повний текст джерела
Анотація:
The air borne dust deposited on the surface of photovoltaic module influence the transmittance of solar radiations from the photovoltaic modules glazing surface. This experimental work aimed to investigate the effect of dust deposited on the surface of two different types of photovoltaic modules (monocrystalline silicon and polycrystalline silicon). Two modules of each type were used and one module from each pair was left exposed to natural atmosphere for three months of winter in Taxila, Pakistan. Systematic series of measurements were conducted for the time period of three months corresponding to the different dust densities. The difference between the output parameters of clean and dirty modules provided the information of percentage loss at different dust densities. The dust density deposited on the modules surface was 0.9867 mg/cm2 at the end of the study. The results showed that dust deposition has strong impact on the performance of photovoltaic modules. The monocrystalline and polycrystalline modules showed about 20% and 16% decrease of average output power, respectively, compared to the clean modules of same type. It was found that the reduction of module efficiency (?clean ? ?dirtv) in case of monocrystalline and polycrystalline module was 3.55% and 3.01%, respectively. Moreover the loss of output power and module efficiency in monocrystalline module was more compared to the polycrystalline module.
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Zekri, Wafaa Abd El-Basit. "Photovoltaic Modules for Indoor Energy Harvesting." JOURNAL OF ADVANCES IN PHYSICS 14, no. 1 (March 7, 2018): 5222–31. http://dx.doi.org/10.24297/jap.v14i1.7063.

Повний текст джерела
Анотація:
This paper presents the performance of indoor energy harvesting systems based on different photovoltaic modules (monocrystalline silicon, polycrystalline silicon, amorphous silicon and polymer) and artificial electric lighting sources (incandescent, fluorescent and cool white flood LED). In this concern, it is clearly proved that, maximum output power densities to be harvested from the photovoltaic module depends mainly on the spectral responses of both the light source and the module material. Herein, and from the study, experimental work, results and analysis, it is clear that monocrystalline silicon is the optimum solution for all light sources, followed by polycrystalline, whenever used with spot-and incandescent - lamps. On the other hand, amorphous samples were proved to be lightly sensitive to fluorescent light and cool white flood LED. Finally, polymer samples were weakly responded whenever exposed to any of the investigated light sources.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Jamel Kadia, Noor, Emad T. Hashim, and Oday I. Abdullah. "PERFORMANCE OF DIFFERENT PHOTOVOLTAIC TECHNOLOGIES FOR AMORPHOUS SILICON (A-SI) AND COPPER INDIUM GALLIUM DI-SELENIDE (CIGS) PHOTOVOLTAIC MODULES." Journal of Engineering and Sustainable Development 26, no. 1 (January 3, 2022): 95–105. http://dx.doi.org/10.31272/jeasd.26.1.10.

Повний текст джерела
Анотація:
In this work, the analysis of performance of two types of photovoltaic (PV) (Amorphous Silicon (a-Si) Copper Indium Gallium Diselenide (CIGS) technologies were achieved out under under Iraqi (Baghdad)climate conditions. The elevation of the selected site is 9 m above ground level. The experimental work covered the eight commercially available PV technologies. The two technologies that employed in this work are, Amorphous Silicon (a-Si) and Copper Indium Gallium Diselenide (CIGS). The total period of the experimental work was 7 months, and the data were analyzed simultaneously. Special attention is given to the influence of temperature and solar radiation the performance of the PV modules. Where, it was proposed a simple I-V curve test for PV modules. The results showed that the proposed system successfully experimentally extracted I-V curves of the selected two PV modules (amorphous and CIGS solar modules). The maximum values of power (Pmax) at solar radiation intensity 750 W/m² are 2.742 W, and 2.831 W for amorphous silicon and copper indium gallium di-selenide respectively. This is occurred because the lowest solar module operating temperature (19 oC and 17 oC for solar radiation 750 and 1000 W/m2 respectively) and ambient temperature (7 oC) and for Jan., 2021 than other months. Consequently, the same behavior for the two modules at solar irradiance 1000 W/m2 with the highest power value; 2.680 W, and 3.198 W of amorphous silicon and copper indium gallium di-selenide respectively. Furthermore, the minimum values of power (Pmax) at solarradiation intensity 750 W/m² are 2.530, and 2.831 for amorphous silicon and copper indium gallium di-selenide respectively because we have the highest solar module operating temperature (57 oC, and 55 oC respectively) and ambient temperature (45 oC) for April, 2021 than other months. Consequently, the same behavior for the two modules at solar irradiance 1000 W/m2 with the highest power value; 2.680 W, and 3.198 W of amorphous silicon and copper indium gallium di-selenide respectively. The highest efficiency can be notes for CIGS solar module with a value 7.3%, while the lowest one is 5.5% for amorphous solar module.
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Luboń, Wojciech, Grzegorz Pełka, Konstanty Marszałek, and Anna Małek. "Performance Analysis of Crystalline Silicon and CIGS Photovoltaic Modules in Outdoor Measurement." Ecological Chemistry and Engineering S 24, no. 4 (December 1, 2017): 539–49. http://dx.doi.org/10.1515/eces-2017-0035.

Повний текст джерела
Анотація:
Abstract The outdoor measurements (during two months experiment) of photovoltaic silicon and CIGS modules as well as simulation of energy production during the period experiment are presented in this paper. This paper offer comparison of construction and electrical characteristics of multicrystalline silicon based modules and CIGS based modules. The measuring system for PV modules efficiency research is shown. The nominal power of installed modules is 250 W for m-Si and 280 W for CIGS modules. The energy production in outdoor conditions at direct current side and alternating current side of each photovoltaic panel was measured. Each PV panel was also equipped with temperature sensor for screening panel temperature. The photovoltaic panels were connected to the electrical network with micro inverters. To determine the influence of irradiance at sunshine on power conversion efficiency of PV panels, the pyranometer was installed in the plane of the modules. Measurement of the instantaneous power and irradiance gave the information about the efficiency of a particular photovoltaic panels. In the paper all data from research installation were analysed to present the influence of solar cell technology on the power conversion efficiency. The results of energy production show that m-Si module produced more energy from square meter (30.9 kWh/m2) than CIGS module (28.0 kWh/m2). Thin film module shows the higher production per kWp than multicrystalline module: 217.3 kWh/kWp for CIGS and 201.9 kWh/kWp for m-Si. The energy production simulation (made by PV SOL software and outdoor measurements test are in the good agreement. Temperature power coefficient for the CIGS module is twice lower than for the multicrystalline silicon module: 0.56%/°C and 0.35%/°C for m-Si and CIGS modules, respectively. The obtained results revealed strong influence of irradiance and temperature on energy production by PV panels. Performed studies have a large field of potential application and could improve designing process of PV installation.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Nover, Jessica, Renate Zapf-Gottwick, Carolin Feifel, Michael Koch, and Juergen Heinz Werner. "Leaching via Weak Spots in Photovoltaic Modules." Energies 14, no. 3 (January 29, 2021): 692. http://dx.doi.org/10.3390/en14030692.

Повний текст джерела
Анотація:
This study identifies unstable and soluble layers in commercial photovoltaic modules during 1.5 year long-term leaching. Our experiments cover modules from all major photovoltaic technologies containing solar cells from crystalline silicon (c-Si), amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). These technologies cover more than 99.9% of the world market. We cut out module pieces of 5 × 5 cm2 in size from these modules and leached them in water-based solutions with pH 4, pH 7, and pH 11, in order to simulate different environmental conditions. Unstable layers open penetration paths for water-based solutions; finally, the leaching results in delamination. In CdTe containing module pieces, the CdTe itself and the back contact are unstable and highly soluble. In CIGS containing module pieces, all of the module layers are more or less soluble. In the case of c-Si module pieces, the cells’ aluminum back contact is unstable. Module pieces from a-Si technology also show a soluble back contact. Long-term leaching leads to delamination in all kinds of module pieces; delamination depends strongly on the pH value of the solutions. For low pH-values, the time dependent leaching is well described by an exponential saturation behavior and a leaching time constant. The time constant depends on the pH, as well as on accelerating conditions such as increased temperature and/or agitation. Our long-term experiments clearly demonstrate that it is possible to leach out all, or at least a large amount, of the (toxic) elements from the photovoltaic modules. It is therefore not sufficient to carry out experiments just over 24 h and to conclude on the stability and environmental impact of photovoltaic modules.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Bashir, Muhammad Anser, Hafiz Muhammad Ali, Shahid Khalil, Muzaffar Ali, and Aysha Maryam Siddiqui. "Comparison of Performance Measurements of Photovoltaic Modules during Winter Months in Taxila, Pakistan." International Journal of Photoenergy 2014 (2014): 1–8. http://dx.doi.org/10.1155/2014/898414.

Повний текст джерела
Анотація:
This paper presents the comparative performance evaluation of three commercially available photovoltaic modules (monocrystalline, polycrystalline, and single junction amorphous silicon) in Taxila, Pakistan. The experimentation was carried out at outdoor conditions for winter months. Power output, module efficiency, and performance ratio were calculated for each module and the effect of module temperature and solar irradiance on these parameters was investigated. Module parameters showed strong dependence on the solar irradiance and module temperature. Monocrystalline and polycrystalline modules showed better performance in high irradiance condition whereas it decreased suddenly with decrease in irradiance. Amorphous solar module also showed good performance in low irradiance due to its better light absorbing characteristics and thus showed higher average performance ratio. Monocrystalline photovoltaic module showed higher monthly average module efficiency and was found to be more efficient at this site. Module efficiency and performance ratio showed a decreasing trend with increase of irradiance and photovoltaic module back surface temperature.
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Takatsuka, Hiromu, Yasuhiro Yamauchi, Keisuke Kawamura, Hiroshi Mashima, and Yoshiaki Takeuchi. "World's largest amorphous silicon photovoltaic module." Thin Solid Films 506-507 (May 2006): 13–16. http://dx.doi.org/10.1016/j.tsf.2005.08.011.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Fanney, A. Hunter, Mark W. Davis, Brian P. Dougherty, David L. King, William E. Boyson, and Jay A. Kratochvil. "Comparison of Photovoltaic Module Performance Measurements." Journal of Solar Energy Engineering 128, no. 2 (January 5, 2006): 152–59. http://dx.doi.org/10.1115/1.2192559.

Повний текст джерела
Анотація:
Computer simulation tools used to predict the energy production of photovoltaic systems are needed in order to make informed economic decisions. These tools require input parameters that characterize module performance under various operational and environmental conditions. Depending upon the complexity of the simulation model, the required input parameters can vary from the limited information found on labels affixed to photovoltaic modules to an extensive set of parameters. The required input parameters are normally obtained indoors using a solar simulator or flash tester, or measured outdoors under natural sunlight. This paper compares measured performance parameters for three photovoltaic modules tested outdoors at the National Institute of Standards and Technology (NIST) and Sandia National Laboratories (SNL). Two of the three modules were custom fabricated using monocrystalline and silicon film cells. The third, a commercially available module, utilized triple-junction amorphous silicon cells. The resulting data allow a comparison to be made between performance parameters measured at two laboratories with differing geographical locations and apparatus. This paper describes the apparatus used to collect the experimental data, test procedures utilized, and resulting performance parameters for each of the three modules. Using a computer simulation model, the impact that differences in measured parameters have on predicted energy production is quantified. Data presented for each module includes power output at standard rating conditions and the influence of incident angle, air mass, and module temperature on each module’s electrical performance. Measurements from the two laboratories are in excellent agreement. The power at standard rating conditions is within 1% for all three modules. Although the magnitude of the individual temperature coefficients varied as much as 17% between the two laboratories, the impact on predicted performance at various temperature levels was minimal, less than 2%. The influence of air mass on the performance of the three modules measured at the laboratories was in excellent agreement. The largest difference in measured results between the two laboratories was noted in the response of the modules to incident angles that exceed 75deg.
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Дисертації з теми "Silicon photovoltaic module"

1

Jensen, Mallory Ann. "Root cause defect identification in multicrystalline silicon for improved photovoltaic module reliability." Thesis, Massachusetts Institute of Technology, 2018. http://hdl.handle.net/1721.1/119344.

Повний текст джерела
Анотація:
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2018.
Cataloged from PDF version of thesis.
Includes bibliographical references (pages 135-145).
To meet climate targets by 2030, manufacturing capacity for photovoltaic (PV) modules must be scaled at 22-25% annual growth rate while maintaining high performance and low selling price. The most suitable material substrate to enable this scale-up is cast multicrystalline silicon (mc-Si) due to its low operating cost and capital requirements compared to other technologies. However, a new form of light-induced degradation was discovered when transitioning mc-Si to the latest high efficiency device architecture. Light- and elevated temperature-induced degradation (LeTID) causes performance to decrease by about 10% (relative) under field-relevant conditions within only four months. In this work, the root cause of LeTID is investigated in three parts: (1) Candidate hypotheses are developed for LeTID; (2) Targeted experiments are carried out toward developing a defect-based description of LeTID; and (3) The basis for a predictive model of LeTID is proposed. Techniques including minority carrier lifetime spectroscopy, synchrotron-based X-ray fluorescence, intentional contamination, and process simulation are employed to probe the defect causing LeTID. The results indicate that LeTID is caused by at least two reactants-hydrogen and one or more reactants that can be modified by high-temperature processing-and that the defect at the point of maximum degradation has recombination characteristics similar to a deep-level donor in silicon. By providing the basis for a predictive model, this work enables both identification of the root cause of LeTID and de-risking of novel solar cell architectures based on mc-Si, allowing assessment of the impact of LeTID on the future of the PV industry. This work also enables development of mitigating strategies for LeTID.
Funding from the National Science Foundation Graduate Research Fellowship Program and grants from the National Science Foundation and the U.S. Department of Energy
by Mallory Ann Jensen.
Ph. D.
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Vorasayan, Pongpan. "Spatially resolved measurement of thin film silicon solar modules by laser beam induced current (LBIC) system." Thesis, Loughborough University, 2010. https://dspace.lboro.ac.uk/2134/6652.

Повний текст джерела
Анотація:
This thesis presents the development of innovative tools to investigate spatially distributed properties of thin film photovoltaic devices. They are required to gain a better understanding of device behaviour driven by how such properties affect the performance of commercial-scale devices. The tools developed for this are a distributed 3D model (D3DM) as simulation software and a laser beam induced current (LBIC) system as a platform for characterisation. The D3DM was developed utilising standard circuit analysis software. It is constructed to simulate realistic device structures and current flows in thin film PV devices. Diode parameters are truly distributed and can be varied independently. The model includes a voltage dependent photocurrent which is a key characteristic of amorphous silicon based solar cells. The D3DM has been used for the investigation of spatial variation in performance due to the distributed nature and non-uniformity of diode parameters and solar cell properties. It is shown that distributed series resistance contributed from the contact layers has a significant impact on solar cell performance and efficiency. The LBIC system is an optical scanning based characterisation tool. Unlike most existing systems, this has been developed specifically for large area, module-size thin film applications. The system provides a detailed photocurrent map which reveals spatial non-uniformity and allows investigation of localised performance variation of the investigated PV devices. System development, components and their characterisation as well as different measurement techniques are described. The model is also applied to LBIC measurements where it is used for a sensitivity analysis of measurement signal with respect to certain cell parameters in cells and modules under different measurement conditions. A new limiting illuminated LBIC (li-LBIC) measurement technique was developed. It is a measurement where the laser-probed cell is brought into limiting condition by means of shading. The signal thus generated is a linear response which was previously unobtainable by typical LBIC measurements. It is unaffected by non-uniform illumination allowing the real properties of investigated cells in a monolithic series connected module to be measured non-destructively.
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Kotsedi, Lebogang. "Fabrication and characterization of a solar cell using an aluminium p-doped layer in the hot-wire chemical vapour deposition process." Thesis, University of the Western Cape, 2010. http://etd.uwc.ac.za/index.php?module=etd&action=viewtitle&id=gen8Srv25Nme4_1349_1363785866.

Повний текст джерела
Анотація:

When the amorphous silicon (a-Si) dangling bonds are bonded to hydrogen the concentration of the dangling bond is decreased. The resulting film is called hydrogenated amorphous silicon (a-Si:H). The reduction in the dangling bonds concentration improves the optoelectrical properties of the film. The improved properties of a-Si:H makes it possible to manufacture electronic devices including a solar cell. A solar cell device based on the hydrogenated amorphous silicon (a-Si:H) was fabricated using the Hot-Wire Chemical Vapour Deposition (HWCVD). When an n-i-p solar cell configuration is grown, the norm is that the p-doped layer is deposited from a mixture of silane (SiH4) gas with diborane (B2H6). The boron atoms from diborane bonds to the silicon atoms and because of the number of the valance electrons, the grown film becomes a p-type film. Aluminium is a group 3B element and has the same valence electrons as boron, hence it will also produce a p-type film when it bonds with silicon. In this study the p-doped layer is grown from the co-deposition of a-Si:H from SiH4 with aluminium evaporation resulting in a crystallized, p-doped thin film. When this thin film is used in the n-i-p cell configuration, the device shows photo-voltaic activity. The intrinsic layer and the n-type layers for the solar cell were grown from SiH4 gas and Phosphine (PH3) gas diluted in SiH4 respectively. The individual layers of the solar cell device were characterized for both their optical and electrical properties. This was done using a variety of experimental techniques. The analyzed results from the characterization techniques showed the films to be of device quality standard. The analysed results of the ptype layer grown from aluminium showed the film to be successfully crystallized and doped. A fully functional solar cell was fabricated from these layers and the cell showed photovoltaic activity.
 

Стилі APA, Harvard, Vancouver, ISO та ін.
4

Peroutka, Tomáš. "Zjišťování klimatických vlivů na degradaci různých typů fotovoltaických článků." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2015. http://www.nusl.cz/ntk/nusl-221066.

Повний текст джерела
Анотація:
In this work are discussed photovoltaic cells. There are also discussed basic concepts of radiation source for solar cells. Also mentioned the issue of semiconductors and even the history and evolution of the solar cells. A large part deals with possibilities of photovoltaic cells degradation. In one chapter is an attempt to bring some types of photovoltaic cells and a description of the production of these modules.The practical part deals with photovoltaic modules degradation and its evaluation. Following part compares measured values with the values provided by producer of photovoltaic modules.
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Owen-Bellini, Michael. "Thermomechanical degradation mechanisms of silicon photovoltaic modules." Thesis, Loughborough University, 2017. https://dspace.lboro.ac.uk/2134/27619.

Повний текст джерела
Анотація:
The durability and lifetime of photovoltaic (PV) modules is one of the chief concerns for an industry which is rapidly approaching maturity. Guaranteeing the economic viability of potential PV installations is paramount to fostering growth of the industry. Whilst certification standards have helped to improve the reliability of modules, with a significant reduction in early failures, long-term performance degradation and overall lifetimes are yet to be addressed in a meaningful way. For this, it is necessary to quantify the effects of use-environment and module design. Long-term degradation of the solder bonds in PV modules causes steady power loss and leads to the generation of more devastating, secondary mechanisms such as hot-spots. Whilst solder bond degradation is well-recognised and even tested for in certification protocols, the potential rate of degradation is not well understood, particularly with respect to different environmental conditions and material selection. The complex nature of a standard silicon PV module construction makes it difficult to observe the stresses experienced by the various components during normal operation. This thesis presents the development of a finite-element model which is used to observe the stresses and strains experienced by module components during normal operating conditions and quantifies the degradation of solder bonds under different environmental conditions. First, module operating temperatures are examined across a range of climates and locations to evaluate the thermal profiles experienced by modules. Using finite-element techniques, the thermomechanical behaviour of modules is then simulated using the same thermal profiles and a quantification of solder bond degradation potential in each location is achieved. It is shown that hot climates are responsible for the highest degradation potential, but further to this, hot environments with many ii clear sky days, allowing for large swings in module temperature, are significantly more damaging. A comparison is drawn between indoor accelerated stress procedures and outdoor exposure, such that an equivalence between test duration and location-dependent outdoor exposure can be determined. It is shown that for the most damaging climate studied, 86 standard thermal cycles is appropriate for one-year of outdoor exposure whereas the least damaging environment would require 11 standard thermal cycles. However, these conclusions may only be applicable to the specific module design which was modelled as the material selection and interaction within a device plays a major role in the thermomechanical behaviour and degradation potential. In addition to a study on the influence of use-environment, a study on the influence of the encapsulating material is conducted with a particular focus on the effects of the viscoelastic properties of the materials. It is shown that the degradation of solder bonds can vary depending on the encapsulating material. Furthermore, the intended use-environment could inform the selection of the encapsulating material. The temperature-dependency of the material properties means that some materials will mitigate thermomechanical degradation mechanisms more than others under certain conditions i.e. hotter or colder climates.
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Lewis, Amanda. "Performance of Silicon Heterojunction Cells and Modules in Arctic Applications: Impact of Angle of Incidence, Air Mass, and Spectra on Energy Yield." Thesis, Université d'Ottawa / University of Ottawa, 2020. http://hdl.handle.net/10393/41164.

Повний текст джерела
Анотація:
In Canada, many remote communities rely on diesel power for the majority of their energy needs, which can cause negative ecological and health impacts while limiting economic development. Bifacial photovoltaics present an alternative to diesel power. With high average latitudes, these communities show potential for large bifacial gains due to high albedo caused by snow and a high fraction of diffuse light; however, high-latitude conditions deviate from standard test conditions, with low average temperatures, light incident from many directions, and high average air masses, resulting in increased energy yield prediction uncertainty. This thesis describes the performance of bifacial silicon heterojunction cells and modules under high-latitude operating conditions, including high angles of incidence and high air masses. Optical losses in the cell and module are described, and module characteristics are incorporated in DUET, the SUNLAB's energy yield prediction software, as an incidence angle modifier and air mass modifier. The percentage change in energy yield when considering air mass is shown to increase with increasing latitude: for a single-axis-tracked installation, the annual difference in energy yield is 0.5% in a low-latitude location (33°N), and more than 2.5% in a high-latitude location (69°N). Air mass correction is demonstrated to improve energy yield prediction accuracy compared to the absence of spectral correction. This work improves energy yield prediction accuracy for high-latitude locations, facilitating adoption of solar energy in diesel-dependent remote communities in Canada and abroad.
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Choi, Hong Kyu. "Analysis and modeling of the long-term performance of amorphous photovoltaic arrays." Diss., The University of Arizona, 1989. http://hdl.handle.net/10150/184835.

Повний текст джерела
Анотація:
A validated predictive model of a-Si:H solar cell arrays was developed. The performance of a-Si:H solar cells was modeled by predicting the performance before degradation first, and then modifying it with terms that account for degradation and recovery effects. A unique approach for the determination of the fundamental rate controlling parameters for the degradation and recovery process was carried out by observing the variation of the short-circuit current. The experimental annealing of a-Si:H silicon samples showed that the percent recovery from the degraded state to the as-grown state by annealing was virtually independent of the initial state at the start of the annealing process. This allowed the recovery parameters to be determined independently of the prior degradation process. An extremely simple and fast running algorithm for the long-term performance was developed in terms of the incident solar radiation, the panel temperature, and the total radiation exposed. Also it was found that the entire process of the Staebler-Wronski effect could be adequately represented by a correlation in which the degradation and recovery processes are solely a function of the total radiation exposure of the panel at ambient conditions.
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Zarmai, Musa Tanko. "Modelling of solder interconnection's performance in photovoltaic modules for reliability prediction." Thesis, University of Wolverhampton, 2016. http://hdl.handle.net/2436/617782.

Повний текст джерела
Анотація:
Standard crystalline silicon photovoltaic (PV) modules are designed to continuously convert solar energy into electricity for 25 years. However, the continual generation of electricity by the PV modules throughout their designed service life has been a concern. The key challenge has been the untimely fatigue failure of solder interconnections of solar cells in the modules due to accelerated thermo-mechanical degradation. The goal of this research is to provide adequate information for proper design of solar cell solder joint against fatigue failure through the study of cyclic thermo-mechanical stresses and strains in the joint. This is carried-out through finite element analysis (FEA) using ANSYS software to develop the solar cell assembly geometric models followed by simulations. Appropriate material constitutive model for solder alloy is employed to predict number of cycles to failure of solder joint, hence predicting its fatigue life. The results obtained from this study indicate that intermetallic compound thickness (TIMC); solder joint thickness (TSJ) and width (WSJ) have significant impacts on fatigue life of solder joint. The impacts of TIMC and TSJ are such that as the thicknesses increases solder joint fatigue life decreases. Conversely, as solder joint width (WSJ) increases, fatigue life increases. Furthermore, optimization of the joint is carried-out towards thermo-mechanical reliability improvement. Analysis of results shows the design with optimal parameter setting to be: TIMC -2.5μm, TSJ -20μm and WSJ -1000μm. In addition, the optimized model has 16,264 cycles to failure which is 18.82% more than the expected 13,688 cycles to failure of a PV module designed to last for 25 years.
Стилі APA, Harvard, Vancouver, ISO та ін.
9

BERARDONE, IRENE. "Fracture Mechanics of Silicon: From durability of photovoltaic modules to the production of thin film solar cells." Doctoral thesis, Politecnico di Torino, 2016. http://hdl.handle.net/11583/2651712.

Повний текст джерела
Анотація:
Nowadays the photovoltaic research is focused on increasing the performances, the durability and reducing the cost of production of solar cells, such as PV modules. These are the paromount fields to make photovoltaics more attractive for the energetic market. In this dissertation two of these aspects are investigated: the durability and the cost reduction issues. The fracture mechanics of the Silicon, the standard material used for the solar cells, is the main subject of the presented study. In the recent and next years the relevance of the durability studies is expected to increase more and more because of the developing of a new segment of PV, the building integrated Photovoltaic (BIPV). These new products incorporating PV modules in the building materials are curtains, walls, windows, sloped roofs, flat roofs, facades, shading systems and roofing shingles. In the new generation of BIPV systems, PV modules replace parts of the building structure, providing functional considerations and lowering costs. In this market the thin-film PV is the most promising technology because of its superior flexibility, minimal weight, and the ability to perform in variable lighting conditions. The issues of this particular PV market are not only the energy production but also the structural safety and performance in addition to architectural specifics as the shadowing. In this framework the durability, the degradation and new technology to achieve a cost reduction are of fundamental importance. In this thesis, experimental diagnostic techniques and interpretative models based on linear and nonlinear fracture mechanics for studying the phenomena of fracture in Silicon are presented. In particular the development and the use of techniques for the quantitative analysis of electroluminescence signals, for the detection of cracks in Silicon caused by thermo-elastic stresses, have been developed. The experimental results have been obtained during an extensive experimental campaign conducted at Politecnico di Torino. For the interpretation of the experimental evidence it has been proposed an original onedimensional electrical model for predicting the eect of cracks on the distribution of electric current. Subsequently, the electric field has been coupled to the mechanical, introducing an electric resistance located at the level of the crack and dependent on the crack itself. In parallel, a numerical analysis has been carried out, using the finite element codes FRANC2D and FEAP, on the phenomenon of peeling in mono-crystalline Silicon induced by thermoelastic stresses. This study, which can be very important in applications because it may allow the production of ultra-thin solar cells with a significant saving of material, is carried out in collaboration with the Institute for Solar Energy Research (ISFH), Hamelin, Germany. This process exploits the thermo-mechanical stresses due to the contrast between the elastic proviii perties of Silicon and Aluminium in line with earlier studies of the school of Harvard. It has been proposed a broad campaign experimental and numerical in order to optimize the process.
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Dbeiss, Mouhannad. "Mission Profile-Based Accelerated Ageing Tests of SiC MOSFET and Si IGBT Power Modules in DC/AC Photovoltaic Inverters." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT020/document.

Повний текст джерела
Анотація:
Dans le cas des installations photovoltaïques, l’onduleur est le premier élément défaillant dont il est difficile d’anticiper la panne, et peu d’études ont été faites sur la fiabilité de ce type de convertisseur. L'objectif de cette thèse est de proposer des outils et méthodes en vue d'étudier le vieillissement des modules de puissance dans ce type d'application en se focalisant sur les phénomènes de dégradation liés à des aspects thermomécaniques. En règle générale, le vieillissement accéléré des modules de puissance est effectué dans des conditions aggravées de courant (Cyclage Actif) ou de température (Cyclage Passif) pour accélérer les processus de vieillissement. Malheureusement, en appliquant ce type de vieillissement accéléré, des mécanismes de défaillances qui ne se produisent pas dans la vraie application peuvent être observés et, inversement, d'autres mécanismes qui se produisent habituellement peuvent ne pas apparaître. La première partie de la thèse se focalise donc sur la mise en place d'une méthode de vieillissement accéléré des composants semi-conducteurs des onduleurs photovoltaïques. Cela est fait en s’appuyant sur l’analyse des profils de mission du courant efficace de sortie des onduleurs et de la température ambiante, extraits des centrales photovoltaïques situées au sud de la France sur plusieurs années. Ces profils sont utilisés pour étudier les dynamiques du courant photovoltaïque, et sont introduites dans des modèles numériques pour estimer les pertes et les variations de la température de jonction des semi-conducteurs utilisés dans les onduleurs, en utilisant l’algorithme de comptage de cycles "Rainflow". Cette méthode est ensuite mise en œuvre dans deux bancs expérimentaux. Dans le premier, les composants sous test sont des modules IGBT. Les composants sont mis en œuvre dans un banc de cyclage utilisant la méthode d'opposition et mettant en œuvre le profil de vieillissement défini précédemment. Un dispositif in-situ de suivi d'indicateurs de vieillissement (impédance thermique et résistance dynamique) est également proposé et évalué. Le deuxième banc est consacré à l'étude de modules de puissance à base de MOSFET SiC. Le vieillissement est effectué dans les mêmes conditions que pour les modules IGBT et de nombreux indicateurs électriques sont monitorés mais, cette fois ci, en extrayant les composants de l'onduleur de cyclage. Les résultats obtenus ont permis de déterminer des indicateurs de vieillissement d’IGBT et de MOSFET SiC utilisés dans un onduleur photovoltaïque
In the case of photovoltaic installations, the DC/AC inverter has the highest failure rate, and the anticipation of its breakdowns is still difficult, while few studies have been done on the reliability of this type of inverter. The aim of this PhD is to propose tools and methods to study the ageing of power modules in this type of application, by focusing on ageing phenomena related to thermo-mechanical aspects. As a general rule, the accelerated ageing of power modules is carried out under aggravated conditions of current (Active Cycling) or temperature (Passive Cycling) in order to accelerate the ageing process. Unfortunately, when applying this type of accelerated ageing tests, some failure mechanisms that do not occur in the real application could be observed, while inversely, other mechanisms that usually occur could not be recreated. The first part of the PhD focuses on the implementation of an accelerated ageing method of the semiconductor devices inside photovoltaic inverters. This is accomplished by analyzing the mission profiles of the inverter’s output current and ambient temperature, extracted over several years from photovoltaic power plants located in the south of France. These profiles are used to study photovoltaic current dynamics, and are introduced into numerical models to estimate losses and junction temperature variations of semiconductors used in inverters, using the cycle counting algorithm “Rainflow”. This method is then performed in two experimental test benches. In the first one, the devices under test are IGBT modules, where the accelerated ageing profile designed is implemented using the opposition method. Moreover, an in-situ setup for monitoring ageing indicators (thermal impedance and dynamic resistance) is also proposed and evaluated. The second bench is devoted to study the ageing of SiC MOSFET power modules. The accelerated ageing test is carried out under the same conditions as for the IGBT modules with more monitored electrical indicators, but this time by disconnecting the semiconductor devices from the inverter. The results obtained allowed to determine several potential ageing indicators of IGBTs and SiC MOSFETs used in a photovoltaic inverter
Стилі APA, Harvard, Vancouver, ISO та ін.
Більше джерел

Книги з теми "Silicon photovoltaic module"

1

P, Shea Stephen, and National Renewable Energy Laboratory (U.S.), eds. Large-scale PV module manufacturing using ultra-thin polycrystalline silicon solar cells: Annual subcontract report, 1 April 2002-30 September 2003. 2nd ed. Golden, Colo: National Renewable Energy Laboratory, 2004.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Ossenbrink, H. Qualification test procedures for crystalline silicon photovoltaic modules. Luxembourg: Commission of the European Communities, 1992.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Guha, S. High-efficiency amorphous silicon and nanocrystalline silicon-based solar cells and modules: Final technical progress report, 30 January 2006 - 29 January 2008. Golden, Colo: National Renewable Energy Laboratory, 2008.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Hacke, P. Characterization of multicrystalline silicon modules with system bias voltage applied in damp heat. Golden, CO]: National Renewable Energy Laboratory, 2011.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

National Renewable Energy Laboratory (U.S.) and IEEE Photovoltaic Specialists Conference (33rd : 2008 : San Diego, Calif.), eds. Performance test of amorphous silicon modules in different climates - year four: Progress in understanding exposure history stabilization effects : preprint. Golden, Colo: National Renewable Energy Laboratory, 2008.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Life cycle design of amorphous silicon photovoltaic modules: Project summary. Cincinnati, OH: U.S. Environmental Protection Agency, National Risk Management Research Laboratory, 1997.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Life cycle design of amorphous silicon photovoltaic modules: Project summary. Cincinnati, OH: U.S. Environmental Protection Agency, National Risk Management Research Laboratory, 1997.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Ossenbrink, H., and E. Rossi. European Solar Test Installation (ESTI): Qulification Test Procedures for Crystalline Silicon Photovoltaic Modules. European Communities / Union (EUR-OP/OOPEC/OPOCE), 1992.

Знайти повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Частини книг з теми "Silicon photovoltaic module"

1

Husain, Dilawar, Kirti Tewari, Manish Sharma, Akbar Ahmad, and Ravi Prakash. "Ecological Footprint of Multi-silicon Photovoltaic Module Recycling." In Environmental Footprints of Recycled Products, 65–82. Singapore: Springer Singapore, 2022. http://dx.doi.org/10.1007/978-981-16-8426-5_3.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Meena, Roopmati, Manish Kumar, and Rajesh Gupta. "Reliability and Degradation Analysis of Crystalline Silicon Photovoltaic Module." In Solar Energy: Advancements and Challenges, 125–44. New York: River Publishers, 2023. http://dx.doi.org/10.1201/9781003373902-8.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Suhir, Ephraim, Dongkai Shangguan, and Laurent Bechou. "Thermal Stresses in a Tri-Material Assembly with Application to Silicon-Based Photovoltaic Module (PVM)." In Encyclopedia of Thermal Stresses, 5309–17. Dordrecht: Springer Netherlands, 2014. http://dx.doi.org/10.1007/978-94-007-2739-7_994.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Tobías, Ignacio, Carlos del Cañizo, and Jesús Alonso. "Crystalline Silicon Solar Cells and Modules." In Handbook of Photovoltaic Science and Engineering, 265–313. Chichester, UK: John Wiley & Sons, Ltd, 2011. http://dx.doi.org/10.1002/9780470974704.ch7.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Tobías, Ignacio, Carlos del Cañizo, and Jesús Alonso. "Crystalline Silicon Solar Cells and Modules." In Handbook of Photovoltaic Science and Engineering, 255–306. Chichester, UK: John Wiley & Sons, Ltd, 2005. http://dx.doi.org/10.1002/0470014008.ch7.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Joshi, J. C., and P. K. Konar. "Outdoor Evaluation of Amorphous Silicon Solar Cell Modules." In Tenth E.C. Photovoltaic Solar Energy Conference, 399–402. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_103.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Juergens, W., R. Plättner, H. Kausche, W. Peters, and W. Stetter. "Economical Patterning of Series Connected a-Silicon Modules." In Seventh E.C. Photovoltaic Solar Energy Conference, 494–503. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-3817-5_88.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Das, Jani. "Heat Effect on Silicon PV Modules." In The Effects of Dust and Heat on Photovoltaic Modules: Impacts and Solutions, 235–57. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-84635-0_9.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Prado, Pedro F. A., Jorge A. S. Tenório, and Denise C. R. Espinosa. "Alternative Method for Materials Separation from Crystalline Silicon Photovoltaic Modules." In The Minerals, Metals & Materials Series, 277–82. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-52192-3_27.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Brickman, L. A. "A Unified Thick/Thin-Film Optical Model for Silicon Solar Cells and Modules." In Seventh E.C. Photovoltaic Solar Energy Conference, 1050–54. Dordrecht: Springer Netherlands, 1987. http://dx.doi.org/10.1007/978-94-009-3817-5_188.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "Silicon photovoltaic module"

1

Jester, Theresa L. "Photovoltaic Cz silicon module improvements." In National center for photovoltaics (NCPV) 15th program review meeting. AIP, 1999. http://dx.doi.org/10.1063/1.58011.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Mayon, Yahuitl Osorio, Matthew Stocks, Katherine Booker, Christopher Jones, and Andrew Blakers. "GaAs/Silicon Tandem Micro-Concentrator Module." In 2020 IEEE 47th Photovoltaic Specialists Conference (PVSC). IEEE, 2020. http://dx.doi.org/10.1109/pvsc45281.2020.9300937.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Jennings, Christina. "Thin film silicon photovoltaic module performance assessment." In AIP Conference Proceedings Volume 157. AIP, 1987. http://dx.doi.org/10.1063/1.36514.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

Foti, Marina, Marco Galiazzo, Lorenzo Cerasti, Enrico Sovernigo, Cosimo Gerardi, Alfredo Guglielmino, Grazia Litrico, et al. "Silicon Heterojunction Solar Module using Shingle interconnection." In 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). IEEE, 2021. http://dx.doi.org/10.1109/pvsc43889.2021.9518670.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Tjengdrawira, C., M. W. P. E. Lamers, I. J. Bennett, and P. C. de Jong. "World first 17% efficient multi-crystalline silicon module." In 2010 35th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2010. http://dx.doi.org/10.1109/pvsc.2010.5616769.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Levrat, J., K. Thomas, A. Faes, J. Champliaud, C. Allebe, N. Badel, L. Barraud, et al. "Metal-free crystalline silicon solar cells in module." In 2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC). IEEE, 2015. http://dx.doi.org/10.1109/pvsc.2015.7355877.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Zhao, J. H., A. Wang, E. Abbaspour-Sani, F. Yun, M. A. Green, and D. L. King. "22.3% efficient silicon solar cell module." In Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996. IEEE, 1996. http://dx.doi.org/10.1109/pvsc.1996.564347.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Jester, Theresa. "Manufacturing Improvements in CZ Silicon Module Production." In 2006 IEEE 4th World Conference on Photovoltaic Energy Conference. IEEE, 2006. http://dx.doi.org/10.1109/wcpec.2006.279912.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Wang, Teng-Yu, Jui-Chung Hsiao, and Chen-Hsun Du. "Recycling of materials from silicon base solar cell module." In 2012 IEEE 38th Photovoltaic Specialists Conference (PVSC). IEEE, 2012. http://dx.doi.org/10.1109/pvsc.2012.6318071.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Fanney, A. Hunter, Mark W. Davis, Brian P. Dougherty, David L. King, William E. Boyson, and Jay A. Kratochvil. "Comparison of Photovoltaic Module Performance Measurements." In ASME 2005 International Solar Energy Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/isec2005-76086.

Повний текст джерела
Анотація:
Computer simulation tools used to predict the energy production of photovoltaic systems are needed in order to make informed economic decisions. These tools require input parameters that characterize module performance under various operational and environmental conditions. Depending upon the complexity of the simulation model, the required input parameters can vary from the limited information found on labels affixed to photovoltaic modules to an extensive set of parameters. The required input parameters are normally obtained indoors using a solar simulator or flash tester, or measured outdoors under natural sunlight. This paper compares measured performance parameters for three photovoltaic modules tested outdoors at the National Institute of Standards and Technology (NIST) and Sandia National Laboratories (SNL). Two of the three modules were custom fabricated using monocrystalline and silicon film cells. The third, a commercially available module, utilized triple-junction amorphous silicon cells. The resulting data allow a comparison to be made between performance parameters measured at two laboratories with differing geographical locations and apparatus. This paper describes the apparatus used to collect the experimental data, test procedures utilized, and resulting performance parameters for each of the three modules. Using a computer simulation model, the impact that differences in measured parameters have on predicted energy production is quantified. Data presented for each module include power output at standard rating conditions and the influence of incident angle, air mass, and module temperature on each module’s electrical performance. Measurements from the two laboratories are in excellent agreement. The power at standard rating conditions is within 1% for all three modules. Although the magnitude of the individual temperature coefficients varied as much as 17% between the two laboratories, the impact on predicted performance at various temperature levels was minimal, less than 2%. The influence of air mass on the performance of the three modules measured at the laboratories was in excellent agreement. The largest difference in measured results between the two laboratories was noted in the response of the modules to incident angles that exceed 75°.
Стилі APA, Harvard, Vancouver, ISO та ін.

Звіти організацій з теми "Silicon photovoltaic module"

1

Jester, T. L. Photovoltaic Cz Silicon Module Improvements. Office of Scientific and Technical Information (OSTI), September 1998. http://dx.doi.org/10.2172/1323.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
2

Gee, J. M. High-efficiency one-sun photovoltaic module demonstration using solar-grade CZ silicon. Final report. Office of Scientific and Technical Information (OSTI), October 1996. http://dx.doi.org/10.2172/399682.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
3

Jester, T. L. Photovoltaic Cz Silicon Module Improvements; Final Subcontract Report, 9 November 1995 - 8 November 1998. Office of Scientific and Technical Information (OSTI), June 1999. http://dx.doi.org/10.2172/9801.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
4

King, R. R., K. W. Mitchell, and T. L. Jester. Photovoltaic Cz silicon module improvements. Annual technical progress report, November 9, 1995--November 8, 1996. Office of Scientific and Technical Information (OSTI), February 1998. http://dx.doi.org/10.2172/572747.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
5

Wohlgemuth, J. Cast polycrystalline silicon photovoltaic module manufacturing technology improvements. Semiannual subcontract report, January 1--June 30, 1995. Office of Scientific and Technical Information (OSTI), February 1996. http://dx.doi.org/10.2172/195684.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
6

Wohlgemuth, J. Cast polycrystalline silicon photovoltaic module manufacturing technology improvements. Semiannual technical report, 1 January 1996--30 June 1996. Office of Scientific and Technical Information (OSTI), January 1997. http://dx.doi.org/10.2172/453488.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
7

Woodhouse, Michael A., Brittany Smith, Ashwin Ramdas, and Robert M. Margolis. Crystalline Silicon Photovoltaic Module Manufacturing Costs and Sustainable Pricing: 1H 2018 Benchmark and Cost Reduction Road Map. Office of Scientific and Technical Information (OSTI), February 2019. http://dx.doi.org/10.2172/1495719.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
8

Wohlgemuth, J. Cast polycrystalline silicon photovoltaic module manufacturing technology improvements. Annual subcontract report, January 1, 1995--December 31, 1995. Office of Scientific and Technical Information (OSTI), June 1996. http://dx.doi.org/10.2172/262999.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
9

Wohlgemuth, J. Cast Polycrystalline Silicon Photovoltaic Module Manufacturing Technology Improvements: Semiannual Subcontract Report, 8 December 1993 - 30 June 1994. Office of Scientific and Technical Information (OSTI), March 1995. http://dx.doi.org/10.2172/41346.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
10

Wohlgemuth, J. Cast polycrystalline silicon photovoltaic module manufacturing technology improvements. Annual subcontract report, 1 January 1996--31 December 1996. Office of Scientific and Technical Information (OSTI), October 1997. http://dx.doi.org/10.2172/541852.

Повний текст джерела
Стилі APA, Harvard, Vancouver, ISO та ін.
Також вас можуть зацікавити розширені добірки на тему "Silicon photovoltaic module" для конкретних типів джерел:
Статті в журналах Дисертації
Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!

До бібліографії