Дисертації з теми "Silicon photonic chip"
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Li, Qing. "Densely integrated photonic structures for on-chip signal processing." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/49035.
Повний текст джерелаYi, Yasha 1974. "On-chip silicon based photonic structures : photonic band gap and quasi-photonic band gap materials." Thesis, Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/29457.
Повний текст джерела"June 2004."
Includes bibliographical references (leaves 170-180).
This thesis focuses on integrated silicon based photonic structures, photonic band gap (PBG) and quasi-photonic band gap (QPX) structures, which are based on high refractive index contrast dielectric layers and CMOS compatibility. We developed a new type of silicon waveguide - Photonic Crystal (PC) cladding waveguide is studied based on PBG principle. The refractive index in the new PC cladding waveguide core therefore has a large flexibility. Low index core (e.g. SiO2) or hollow core waveguide can be realized with our PC cladding waveguide structure. The fabrication of the waveguide is compatible to CMOS process. To demonstrate the PBG guiding mechanism, we utilized prism coupling to the Asymmetric PC cladding waveguide and the effective index of the propagation mode is measured directly. The measured effective mode index is less than both Si and Si3N4 cladding layers, which is clear demonstration of the photonic band gap guiding principle. We also fabricated and measured the PC cladding channel waveguide. Potential applications include high power transmission, low dispersion, thin cladding thickness and nonlinear properties engineering. Secondly, we developed a Si-based multi-channel optical filter with tunability, which is based on omnidirectional reflecting photonic band gap structure with a relatively large air gap defect. Using only one device, multi channel filter with tunability around two telecom wavelength 1.55[mu]m and 1.3[mu]m by electrostatic force is realized. Four widely spaced resonant modes within the photonic band gap are observed, which is in good agreement with numerical simulations.
(cont.) The whole process is compatible with current microelectronics process technology. There are several potential applications of this technology in wavelength division multiplexing (WDM) devices. Thirdly, to further extend the photonic crystal idea, we studied the quasi-photonic crystal structures and their properties, especially for the fractal photonic band gap properties and the transparent resonant transmission states. A-periodic Si/SiO2 Thue-Morse (T-M) multilayer structures have been fabricated, for the first time, to investigate both the scaling properties and the omnidirectional reflectance at the fundamental optical band-gap. Variable angle reflectance data have experimentally demonstrated a large reflectance band-gap in the optical spectrum of a T-M quasicrystal, in agreement with transfer matrix simulations. The physical origin of the T-M omnidirectional band-gap has been explained as a result of periodic spatial correlations in the complex T-M structure. The unprecedented degree of structural flexibility of T-M systems can provide an attractive alternative to photonic crystals for the fabrication of photonic devices.
by Yasha Yi.
Ph.D.
Polster, Robert. "Architecture of Silicon Photonic Links." Thesis, Paris 11, 2015. http://www.theses.fr/2015PA112177/document.
Повний текст джерелаFuture high performance computer (HPC) systems will face two major challenges: interconnection bandwidth density and power consumption. Silicon photonic technology has been proposed recently as a cost-effective solution to tackle these issues. Currently, copper interconnections are replaced by optical links at rack and board level in HPCs and data centers. The next step is the interconnection of multi-core processors, which are placed in the same package on silicon interposers, and define the basic building blocks of these computers. Several works have demonstrated the possibility of integrating all elements needed for the realization of short optical links on a silicon substrate.The first contribution of this thesis is the optimization of a silicon photonic link for highest energy efficiency in terms of energy per bit. The optimization provides energy consumption models for the laser, a de- and serialization stage, a ring resonator as modulator and supporting circuitry, a receiver front-end and a decision stage. The optimization shows that the main consumers in optical links is the power consumed by the laser and the modulator's supporting circuitry. Using consumption parameters either gathered by design and simulation or found in recent publications, the optimal bit rate is found in the range between 8 Gbps and 22 Gbps, depending on the used CMOS technology. Nevertheless, if the static power consumption of modulators is reduced it could decrease even below 8 Gbps.To apply the results from the optimization an optical link receiver was designed and fabricated. It is designed to run at a bit rate of 8 Gbps. The receiver uses time interleaving to reduce the needed clock speed and aleviate the need of a dedicated deserialization stage. The front-end was adapted for a wide dynamic input range. In order to take advantage of it, a fast mechanism is proposed to find the optimal threshold voltage to distinguish ones from zeros.Furthermore, optical clock channels are explored. Using silicon photonics a clock can be distributed to several processors with very low skew. This opens the possibility to clock all chips synchronously, relaxing the requirements for buffers that are needed within the communication channels. The thesis contributes to this research direction by presenting two novel optical clock receivers. Clock distribution inside chips is a major power consumer, with small adaptation the clock receivers could also be used inside on-chip clocking trees
Li, Hui. "Design methods for energy-efficient silicon photonic interconnects on chip." Thesis, Lyon, 2016. http://www.theses.fr/2016LYSEC059/document.
Повний текст джерелаSilicon photonics is an emerging technology considered as one of the key solutions for future generation on-chip interconnects, providing several prospective advantages such as low transmission latency and high bandwidth. However, it still encounters challenges in energy efficiency. Different topologies, physical layouts, and architectures provide various interconnect options for on-chip communication. This leads to a large variation in optical losses, which is one of the predominant factors in power consumption. In addition, silicon photonic devices are highly sensitive to temperature variation. Under a given chip activity, this leads to a lower laser efficiency and a drift of wavelengths of optical devices (on-chip lasers and microring resonators (MRs)), which in turn results in a higher Bit Error Ratio (BER) and consequently reduces the energy efficiency of optical interconnects. In this thesis, we work on design methodologies for energy-efficient silicon photonic interconnects on chip related to topology/layout, thermal variation, and architecture
Hu, Weisheng. "Development of Single-Chip Silicon Photonic Microcantilever Arrays for Sensing Applications." BYU ScholarsArchive, 2011. https://scholarsarchive.byu.edu/etd/2610.
Повний текст джерелаXia, Zhixuan. "Highly sensitive, multiplexed integrated photonic structures for lab-on-a-chip sensing." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/54848.
Повний текст джерелаZanzi, Andrea. "Passive and active silicon photonics devices at TLC telecommunication wavelengths for on-chip optical interconnects." Doctoral thesis, Universitat Politècnica de València, 2020. http://hdl.handle.net/10251/149377.
Повний текст джерела[ES] Las tecnologías ópticas son el eje vertebrador de los sistemas de comunicación mod- ernos que proporcionan acceso de alta velocidad a la Internet, interconexiones efi- cientes entre centros de datos y dentro de ellos. Además, se están expandiendo hacia campos de investigación crecientes y nuevos mercados como son las aplicaciones de comunicaciones por satélite, los LIDAR (Laser Imaging Detection and Ranging), la computación neuromórfica y los circuitos fotónicos programables, por nombrar algunos. La fotónica de silicio está considerada y aceptada ampliamente como una de las tecnologías clave para que dichas aplicaciones puedan desarrollarse. Como resultado, hay una fuerte necesidad de estructuras fotónicas básicas integradas que sean innovadoras, que soporten altas velocidades de transmisión y que sean más eficientes en términos de consumo de potencia, a fin de aumentar la capacidad de los circuitos integrados fotónicos de silicio. El trabajo desarrollado y presentado en esta tesis se centra en el diseño y la car- acterización de dispositivos avanzados pasivos y activos, para circuitos fotónicos integrados. La tesis consta de tres capítulos principales, así como de sendas sec- ciones de motivación y conclusiones que exponen los fundamentos y los logros de este trabajo. El capítulo uno describe el diseño y la caracterización de un modulador electro-óptico Mach-Zehnder incorporado en una unión pn vertical altamente eficien- ciente que explota el efecto de dispersión de plasma en banda O. El capítulo dos está dedicado al diseño y caracterización de una nueva geometría de dispositivo de interferencia multimodo asimétrico y su aplicación en un modulador Mach-Zehnder. El capítulo tres está dedicado al diseño y caracterización de innovadores cristales fotónicos unidimensionales para aplicaciones de modulación con luz lenta. Se pre- senta un amplio análisis de los principales retos derivados del uso de la misma.
[CA] Les tecnologies òptiques són l'eix vertebrador d'aquells sistemes de comunicació moderns que proporcionen accés d'alta velocitat a la Internet, així com intercon- nexions eficients inter i entre centres de dades. A més a més, s'estan expandint cap a camps d'investigació creixents i nous mercats com són les aplicacions de co- municacions per satèl·lit, els LIDAR (Laser Imaging Detection and Ranging), la computació neuromòrfica i els circuits fotònics programables, entre d'altres. La fotònica de silici és considerada i acceptada àmpliament com una de les tecnologies clau i necessàries perquè aquestes aplicacions puguen desenvolupar-se. Per aquest motiu, es fa necessària l'existència d'estructures fotòniques bàsiques integrades que siguen innovadores, que suporten altes velocitats de transmissió i que siguen més eficients en termes de consum de potència, a fi d'augmentar la capacitat dels cir- cuits integrats fotònics de silici. El treball desenvolupat i presentat en aquesta tesi se centra en el disseny i la caracterització de dispositius avançats passius i actius, per a circuits fotònics integrats. La tesi consta de tres capítols principals, així com d'una secció de motivació i una altra de conclusions que exposen els fonaments i els assoliments d'aquest treball. El capítol u descriu el disseny i la caracterització d'un modulador electro-òptic Mach-Zehnder incorporat en una unió pn vertical d'alta efi- ciència que explota l'efecte de dispersió de plasma en la banda O. El capítol dos està dedicat al disseny i caracterització d'una nova geometria de dispositiu d'interferència multimode asimètric així com a la seua aplicació en un modulador Mach-Zehnder. El capítol tres està dedicat al disseny i caracterització d'innovadors cristalls fotònics unidimensionals per a aplicacions de modulació amb llum lenta. S'inclou també una anàlisi detallada dels principals reptes derivats de l'ús d'aquest tipus de llum.
I want to thank you the Generelitat Valenciana and the European Project L3MATRIX for the funding, without them my doctorate would not taken place.
Zanzi, A. (2020). Passive and active silicon photonics devices at TLC telecommunication wavelengths for on-chip optical interconnects [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/149377
TESIS
Hoang, Thi Hong Cam. "Planar slot photonic crystal cavities for on-chip hybrid integration." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLS063/document.
Повний текст джерелаThis Ph.D. work is a contribution to the modeling and the experimental study of slot photonic crystal cavities for hybrid on-silicon integration. Among the design works, we first have used plane the wave expansion and finite-difference time-domain methods to design a series of mechanically robust (non-free membrane) SOI slot photonic crystal heterostructure cavities with resonance wavelengths in the telecommunication range, i.e. from 1.3 µm – 1.6 µm, with Q-factors of around several tens of thousands and mode volumes around 0.03(lambda/n)^3 after being infiltrated by cladding materials with typical index values around 1.5. We have then analytically and numerically studied the coupling between a slot photonic crystal cavity and a slot photonic crystal waveguide by using the coupled mode theory and FDTD simulation. Then we confirmed the ability to excite the cavity slot modes from a waveguide by using FDTD simulation. Finally, as a preliminary step towards the use of several coupled slotted cavities for future hybrid integration schemes, we have numerically and semi-analytically investigated photonic molecules made of two coupled slot photonic crystal cavities providing two different supermodes (bonding and antibonding ones) with controllable wavelength splitting. We successfully employed the tight-binding (TB) approach, which relies on the overlap of the two tightly confined cavity electric fields, to predict the supermodes frequencies and spatial distributions in several coupled slot photonic crystal cavity configurations.This exploratory work was supplemented by an experimental part, which focused on the investigation of a family of slot photonic crystal heterostructure cavities. The fabricated silicon on insulator hollow core cavities showed quality factors of several tens of thousands, i.e. from 18,000 to 31,000 and mode volume V of ~0.03(λ/n)3 after being infiltrated with liquids of ~1.46 refractive index, yielding Q/V ratio larger than 600,000, and reaching 1,000,000 in the best case (at λ ≈ 1.3 μm).This preliminary experimental stage gave rise to two types of additional developments.Firstly, the properties of the studied slot photonic crystal cavities have been investigated for index sensing applications by using different liquids with refractive index values ranging from 1.345 to 1.545. The considered photonic crystal resonators have demonstrated quality factors of several tens of thousands with sensitivities of ~235 nm/RIU and index sensing FOMs around 3,700, i.e. at the state of the art considering hollow core silicon integrated resonators.Secondly, in the view of the integration of active materials on silicon, the potential of these hollow core nanoresonators has been considered to enhance the photo-luminescence (PL) of semiconductor single-walled carbon nanotubes (SWNTs) integrated in thin films deposited on top of silicon. We have brought the first experimental demonstration of SWNTs PL collection (around lambda=1.28 µm) under vertical pumping at short wavelength (lambda=740 nm) from a slotted resonator into millimeter long integrated silicon waveguides, providing a first proof-of-concept step towards nanotube/Si-PhC integration as an active photonic platform. The reported works demonstrate the feasibility of integrating telecommunication wavelength nanotube emitters in silicon photonics as well as emphasize the role of slot photonic crystal cavities for on-chip hybrid integration
Koshkinbayeva, Ainur. "New photonic architectures for mid-infrared gaz sensors integrated on silicon." Thesis, Lyon, 2017. http://www.theses.fr/2017LYSEI019.
Повний текст джерелаThe work focuses on optical multiplexers operating in mid-IR for broadband source in gas sensing application. Two configurations were studies – arrayed waveguide grating (AWG) and planar concave grating (PCG). First, principle of operation was understood in order to develop analytical solution for output field using Gaussian approximation of the field and Fourier Optics. Then, semi-analytical simulation tool of the spectral response for both multiplexer configurations was developed in MATLAB. Normal distribution of phase errors was introduced to semi-analytical AWG model, which allowed us to study the correlation between standard deviation of phase errors and the level of crosstalk of AWG spectral response. AWG at 5.65 µm was fabricated based on SiGe/Si technology using the MATLAB tool for design parameters calculation and P.Labeye’s tool for AWG geometry calculation. Devices with slightly varying parameters were characterized: AWG1 with 4.6 µm waveguides and 9µm MMI; AWG2 with 4.6 µm waveguides and 11µm MMI; AWG3 with 4.8 µm waveguides and 9µm MMI. Measurements of devices on chip 36 (center of the wafer) and chip 32 (side of the wafer) were performed and analyzed. Temperature measurements of AWG2 and AWG3 (chip 32 and chip 36) at points five temperature points showed linear dependence of spectral shift with the temperature which has a good correlation with simulation predictions
Frank, Ian Ward. "Integrated filters for the on-chip silicon photonics platform." Thesis, Harvard University, 2013. http://dissertations.umi.com/gsas.harvard:11205.
Повний текст джерелаEngineering and Applied Sciences
Galán, Conejos José Vicente. "Addressing Fiber-to-Chip Coupling Issues in Silicon Photonics." Doctoral thesis, Universitat Politècnica de València, 2011. http://hdl.handle.net/10251/9196.
Повний текст джерелаGalán Conejos, JV. (2010). Addressing Fiber-to-Chip Coupling Issues in Silicon Photonics [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/9196
Palancia
El, Dirani Houssein. "Development of high quality silicon nitride chips for integrated nonlinear photonics." Thesis, Lyon, 2019. http://www.theses.fr/2019LYSEC027/document.
Повний текст джерелаThe data traffic need for ultra-high definition videos as well as for the mobile data continues to grow. Within the last decade, optical frequency combs have revolutionized the telecommunications field and paved the way for groundbreaking data transmission demonstrations at previously unattainable data rates. Beside the telecommunications field, optical frequency combs brought benefits also for many other applications such as precision spectroscopy, chemical and bio sensing, optical clocks, and quantum optics. The efficiency of the four-wave mixing phenomenon from which the optical frequency comb arises critically depends on the propagation losses and consequently on the device roughness induced by the lithography and the etching processes. In addition, the bulk material absorption reduces the efficiency of the nonlinear phenomena. By using state-of-the-art complementary metal oxide semiconductor processes, the roughness can be reduced thanks to the maturity of the manufacturing, while the material bulk absorption can be reduced by thermal treatments. In addition, using a CMOS material enables a low-cost fabrication and the co-integration with electronic devices into the same chip. Silicon-nitride-on-insulator is an attractive CMOS-compatible platform for optical frequency comb generation in the telecommunication band because of the low two-photon absorption of silicon nitride when compared with crystalline silicon. However, the as deposited silicon nitride has a hydrogen related absorption in the telecommunication band. Although high-temperature annealing has been traditionally used to reduce the hydrogen content and successfully demonstrate silicon nitride-based frequency combs, this approach made the co-integration with silicon-based optoelectronics elusive, thus reducing dramatically its effective complementary metal oxide semiconductor compatibility. In this thesis, we report on the fabrication and test of annealing-free silicon nitride nonlinear photonic circuits. In particular, we have developed a process to fabricate low-loss, annealing-free and crack–free Si3N4 740-nm-thick films for Kerr-based nonlinear photonics, featuring a full process compatibility with front-end silicon photonics. Experimental evidence shows that micro-resonators using such annealing-free silicon nitride films are able to generate a frequency comb spanning 1300-2100 nm via optical parametrical oscillation based on four-wave mixing. In addition, we present the further optimized technological process related to annealed silicon nitride optical devices using high-confinement waveguides, allowing us to achieve record-low losses. This was enabled via a carefully tailored patterning etching process and an annealing treatment particularly efficient due to the already low hydrogen content in our as-deposited silicon nitride. Such improved Si3N4 platform allowed us to demonstrate on-chip integrated Kerr frequency comb sources using silicon nitride resonators that were butt-coupled to a III-V DFB laser used as a pump source. This proof of concept proves the validity of our approach for realizing fully packaged compact optical frequency combs
Quan, Qimin. "Photonic Crystal Nanobeam Cavities for Biomedical Sensing." Thesis, Harvard University, 2012. http://dissertations.umi.com/gsas.harvard:10421.
Повний текст джерелаEngineering and Applied Sciences
Neel, Brian. "High Performance Shared Memory Networking in Future Many-core Architectures UsingOptical Interconnects." Ohio University / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1397488118.
Повний текст джерелаMercadé, Morales Laura. "Phonons Manipulation in Silicon Chips Using Cavity Optomechanics." Doctoral thesis, Universitat Politècnica de València, 2021. http://hdl.handle.net/10251/171461.
Повний текст джерела[CA] L'optomecànica de cavitats s'ocupa de la interacció entre la llum i la matèria a través de l'efecte de pressió de radiació quan les ones òptiques i mecàniques implicades estan confinades en una cavitat. En aquests sistemes optomecànics, la interacció entre fotons i fonons dona lloc a multitud de fenòmens en funció de les condicions de les condicions en les quals s'excita el sistema. En particular, es poden obtindre dos règims diferents en els quals es pot, o bé, absorbir fonons (denominat com a refredament de la cavitat), o bé, es poden amplificar (règim conegut com a calfament de la cavitat). El primer règim pot usar-se, per exemple, per a reduir l'ocupació tèrmica del sistema i s'usa comunament per a aplicacions relatives al processament d'informació quàntica. No obstant això, l'amplificació de fonons, que pot ser desenvolupada a temperatura ambient, ha permés aconseguir fins i tot les condicions necessàries per a obtindre làsers de fonons, la qual cosa permet poder usar aquesta característica com a element de referència en aplicacions relatives al processament de senyals de radiofreqüència (RF). En aquesta tesi s'aborda el confinament simultani i la interacció de fotons i fonons en estructures periòdiques i en guies no suspeses en sistemes CMOS compatibles basats en tecnologia de silici. A través de l'estudi experimental d'aquestes estructures periòdiques, hem demostrat que les cavitats optomecàniques poden actuar com a elements clau en el domini de la fotònica de microones, on tot el processament de la informació pot ser realitzat en el domini òptic a través de la manipulació de fonons en aquest sistema. En particular, vam mostrar que només un oscil·lador optomecànic pot actuar tant com un oscil·lador local i un mesclador de RF, i aquest pot operar com un convertidor de freqüències de senyals de cadenes de dades reals. Per a millorar aquesta funcionalitat, també es demostra que és possible obtindre tant tren de freqüències òptics així com múltiples modes mecànics confinats, augmentant així el seu rendiment. D'altra banda, amb l'objectiu de poder solucionar les possibles limitacions d'aquests sistemes, en aquesta tesi també s'exploren diferents configuracions que permeten la interacció acusto-òptica simultània en la mateixa estructura. Específicament, s'analitza la interacció optomecànica en discos d'alt índex que suporten estats quasi-lligats en el continu així com una proposta de guies no suspeses que suporten altes ganancies de Brillouin. Aquest últim estudi hauria de permetre el desenvolupament de sistemes optomecànics no suspesos on el problema de la pèrdua de fonons cap al substrat es resolga, fet que permetria enormement simplificar la fabricació d'aquests sistema optomecànics en xips de silici així com el seu ús en diverses aplicacions.
[EN] Cavity optomechanics deals with the interaction of light and matter through the radiation pressure effect, when the involved optical and mechanical waves are confined in a cavity. In optomechanical systems, photon and phonon interaction give rise to a plethora of phenomena as a function of the driving conditions of the system. Relative to that, two distinctive regimes can be obtained which enable either the absorption of phonons (cavity cooling) or their amplification (cavity heating). The first regime can be used to reduce the thermal occupancy of the system and it is commonly used for quantum processing information applications. However, the amplification of phonons, which can be performed at room temperature, has enabled to even reach phonon lasing conditions, a feature that could be used as a reference element for RF processing applications. In this thesis, we address the simultaneous confinement and interaction of photons and phonons in periodic structures and unreleased waveguides on CMOS-compatible silicon-based technology. Throughout the experimental study of those periodic structures, we demonstrate that optomechanical cavities can perform as key blocks in the microwave photonics domain where all the information processing can be performed in the optical domain through phonon manipulation. In particular, we show that a single optomechanical oscillator can perform as both a local oscillator and an RF mixer, and it can operate as a frequency-converted of real data stream signals. To improve its performance, it is also demonstrated that optical frequency combs can be obtained by means of this system and multiple mechanical mode confinement can also be achieved, thus improving the functionality of the system. On the other hand, in order to fulfill the possible limitations of those systems, we explore different configurations enabling the simultaneous acousto-optic interaction together into the same structure. Especially, optomechanical interaction in high-index disks supporting quasi-bound states in the continuum is addressed, as well as a proposal of unreleased waveguides supporting strong Brillouin gains is also reported. The last one should lead to unreleased optomechanical interacting systems where the issue of phonon leakage into the substrate is solved, which could enormously simplify the fabrication of optomechanical systems in silicon chips as well as their practical use in multiple applications.
This work has been carried out under the framework of the H2020 FET-Open EU project PHENOMEN. This Thesis was also supported by the Programa de Ayudas de Investigación y Desarrollo (PAID-01-16) de la Universitat Politècnica de València
Mercadé Morales, L. (2021). Phonons Manipulation in Silicon Chips Using Cavity Optomechanics [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/171461
TESIS
Hamdam, Nikkhah. "Optical Switch on a Chip: The Talbot Effect, Lüneburg Lenses & Metamaterials." Thèse, Université d'Ottawa / University of Ottawa, 2013. http://hdl.handle.net/10393/24391.
Повний текст джерелаLin, Che-Yun. "Silicon integrated nanophotonic devices for on-chip optical interconnects." Thesis, 2012. http://hdl.handle.net/2152/ETD-UT-2012-05-5720.
Повний текст джерелаtext
Gazman, Alexander. "Silicon Photonic Subsystems for Inter-Chip Optical Networks." Thesis, 2019. https://doi.org/10.7916/d8-x39h-rd69.
Повний текст джерелаAbrams, Nathan Casey. "Development of Silicon Photonic Multi Chip Module Transceivers." Thesis, 2020. https://doi.org/10.7916/d8-k83d-xx06.
Повний текст джерелаZhang, Yang active 2013. "Multi-layer silicon photonic devices for on-chip optical interconnects." Thesis, 2013. http://hdl.handle.net/2152/23344.
Повний текст джерелаtext
Wang, Chuting. "On-Chip Photonic Devices for Coupling to Color Centers in Silicon Carbide." Thesis, 2020. https://thesis.library.caltech.edu/13673/66/chapter1.pdf.
Повний текст джерелаOptical quantum networks are important for global use of quantum computers, and secure quantum communication. Those networks require storage devices for synchronizing or making queues of processing transferred quantum information. Practical quantum information networks should minimize loss of transmitted data (photons) and have high efficiency mapping when writing data on memories (solid state qubits). This requires strong light-matter interaction that is enabled by coupling qubits to optical cavities.
The first half of the thesis focuses on emerging candidates for promising qubits in silicon carbide (SiC). The optical and quantum properties of these color centers are discussed with focus on divacancies in 4H-SiC due to their long spin coherence time. Optically detected magnetic resonance of divacancies is shown, an essential technique for reading out the qubit state using the intensity of optical emission.
The second half of the thesis focuses on hybrid photonic devices for coupling to silicon carbide qubits. Hybrid devices are made of another layer of high refractive index material other than the qubit hosting material. Evanescent coupling to qubits close to the surface can be achieved without damaging the host material. Mainly the silicon (Si) on 4H-SiC hybrid ring resonator architecture is discussed starting from design, simulation to fabrication. The fabrication includes Si membrane transfer that is an important step to create a light confining layer on 4H-SiC. The final ring resonator device shows quality factors as high as 23000.
Lechago, Buendía Sergio. "All-dielectric nanoantennas enabling on-chip wireless silicon photonics." Doctoral thesis, 2019. http://hdl.handle.net/10251/133074.
Повний текст джерела[CAT] La revolució habilitada per les aplicacions fotòniques durant les últimes dècades ha deixat la seua empremta en la societat actual tal com la coneixem. Exemples clars d'aquest impacte estan patents en, per exemple, l'enorme tràfic de dades generat per l'ús d'Internet o d'algunes tècniques biomèdiques amb fins diagnòstics o quirúrgics, que no es podrien entendre sense l'incessant desenvolupament dels sistemes òptics. La necessitat de combinar i miniaturitzar aquests sistemes per produir funcionalitats més avançades va donar lloc al naixement dels circuits fotònics integrats (PICs), que és on aquesta tesi va començar a prendre forma. En aquest sentit, observem limitacions en termes de flexibilitat o reconfigurabilitat inherents a la naturalesa guiada de la majoria dels PICs realitzats fins al moment. En el circuits plasmònics, tenim a mès les limitacions de les elevades pèrdues que les guies metàl·liques tenen a altes freqüències. La inclusió d'estructures sense fil (basades principalment en l'ús de nanoantenes plasmòniques) a la capa fotònica va sorgir per mitigar aquestes pèrdues, obrint també noves vies d'investigació. No obstant això, aquests dispositius encara presentaven rendiments molt pobres com a elements purament radiants en el règim de camp llunyà. Per superar aquestes deficiències, en aquest treball, vam introduir un enfocament innovador en el desenvolupament de dispositius sense fil a la nanoescala, que va donar forma al que anomenem on-chip wireless silicon photonics. Aquest nou concepte està basat en l'ús de nanoantenes de silici compatibles amb processos CMOS, que constitueixen les estructures clau que possibiliten un vast catàleg d'aplicacions en xarxes fotòniques de comunicació o en sensors ultra-integrats, així com per a la interconnexió de sistemes dieléctrics-plasmònics avançats. En l'àmbit de les comunicacions, gràcies a les senzilles regles de disseny per adaptar la directivitat de les antenes a les diverses aplicacions, vam poder demostrar per primera vegada transmissions de dades on-chip (mitjançant l'ús d'antenes altament directives) en xarxes reconfigurables o desenvolupar un dispositiu per generar a voluntat focus electromagnètics de manera dinàmica en espais bidimensionals (gràcies a antenes amb una directivitat més baixa). D'altra banda, en el camp del biosensing, vam dissenyar i fabricar un sensor lab-on-a-chip per a la classificació de micropartícules, basat en l'emprament d'antenes dielèctriques amb un rendiment a l'avantguarda dels millors dispositius de l'estat de l'art, que inclou el subsistema òptic més compacte demostrat fins al moment. Finalment, vam ser capaços de connectar experimentalment i de manera eficient antenes basades en silici amb estructures plasmònics per al desenvolupament de noves aplicacions en la nanoescala, unint els avantatges del on-chip wireless silicon photonics per a comunicacions en xip, conformació dinàmica de feixos o biosensat amb els avantatges de la plasmònica per a la manipulació e interacció amb llum.
[EN] The revolution sparked by photonic applications during the last decades has made its mark in society, as we currently know it. Clear examples of this impact are patent in, for instance, the colossal worldwide data traffic generated by the use of the Internet or the widespread utilization of some biomedical techniques for diagnostic or surgical purposes, which could not be understood without the ceaseless development of optical systems. The necessity of combining and miniaturizing these systems to enable advanced functionalities gave birth to the development of photonic integrated circuits (PICs), which is the main framework within which this thesis began to take shape. Along these lines, we noticed restricted limitations in terms of flexibility or reconfigurability inherent to the wired-based nature of most PIC implementations carried out so far. In the case of plasmonic circuitry, there are additional shortcomings arising from the prohibitive losses of metallic waveguides at very high frequencies. The inclusion of wireless structures (mostly based on plasmonic nanoantennas) at the photonic layer emerged to mitigate these limiting losses, also opening new research avenues. However, these devices still presented poor performances as purely radiating elements in the far-field regime. In order to overcome these lacks, in this work, we introduced a novel version to wireless approaches at the nanoscale in what we called on-chip wireless silicon photonics. This new concept was built upon the use of CMOS-compatible silicon-based nanoantennas, which constitute the key enabling structures of a diverse catalogue of applications in photonic communication networks or ultra-integrated sensors as well as for interfacing advanced dielectric-plasmonic systems. In the scope of communications, thanks to the easiness to tailor the antenna directivity, we were able to experimentally demonstrate on-chip data transmission flows in reconfigurable networks for the first time (by using highly directive antennas) or to develop dynamically tailor-made interference patterns to create focused spots at will on a 2D arrangement (enabled by antennas with a lower directivity). On the other hand, in the field of biosensing, we experimentally implemented a dielectric antenna-based lab-on-a-chip device for microparticle classification with state-of-the-art performance, which included the most compact optical subsystem demonstrated so far. Finally, we were able to efficiently interface silicon-based antennas to plasmonic systems to develop new advanced functionalities at the nanoscale, by putting together the advantages of on-chip wireless silicon photonics for on-chip communications, beam-shaping tailoring or lab-on-a-chip sensing with the advantages of plasmonics for light concentration and manipulation.
Lechago Buendía, S. (2019). All-dielectric nanoantennas enabling on-chip wireless silicon photonics [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/133074
TESIS
Narayan, Aditya. "Energy-efficient architectures for chip-scale networks and memory systems using silicon-photonics technology." Thesis, 2021. https://hdl.handle.net/2144/43110.
Повний текст джерела(5929817), Saman Jahani. "On-Chip Quantum Photonics: Low Mode Volumes, Nonlinearities and Nano-Scale Superconducting Detectors." Thesis, 2019.
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