Готові списки джерел за темами / Silicon photodetector

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Опубліковано: 6 вересня 2023

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Статті в журналах з теми "Silicon photodetector"

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Zhao, Jijie, Huan Liu, Lier Deng, Minyu Bai, Fei Xie, Shuai Wen, and Weiguo Liu. "High Quantum Efficiency and Broadband Photodetector Based on Graphene/Silicon Nanometer Truncated Cone Arrays." Sensors 21, no. 18 (September 13, 2021): 6146. http://dx.doi.org/10.3390/s21186146.

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Light loss is one of the main factors affecting the quantum efficiency of photodetectors. Many researchers have attempted to use various methods to improve the quantum efficiency of silicon-based photodetectors. Herein, we designed highly anti-reflective silicon nanometer truncated cone arrays (Si NTCAs) as a light-trapping layer in combination with graphene to construct a high-performance graphene/Si NTCAs photodetector. This heterojunction structure overcomes the weak light absorption and severe surface recombination in traditional silicon-based photodetectors. At the same time, graphene can be used both as a broad-spectrum absorption layer and as a transparent electrode to improve the response speed of heterojunction devices. Due to these two mechanisms, this photodetector had a high quantum efficiency of 97% at a wavelength of 780 nm and a short rise/fall time of 60/105µs. This device design promotes the development of silicon-based photodetectors and provides new possibilities for integrated photoelectric systems.
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Wang, Fangjie, Xiaoxu Chen, Sikun Zhou, Qiongqiong Gu, Hao Zhou, Guoliang Deng, and Shouhuan Zhou. "An on-chip integrated microfiber–silicon–graphene hybrid structure photodetector." Laser Physics 31, no. 12 (November 12, 2021): 126207. http://dx.doi.org/10.1088/1555-6611/ac3245.

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Abstract Silicon photonic devices have great potential for photocommunication, and silicon-based photodetectors have attracted wide attention. Here, we report an on-chip integrated microfiber–silicon–graphene hybrid structure photodetector that can operate in the visible and near-infrared ranges. The detector has a responsivity of ∼136 mA W−1 at 808 nm and a rise time of ∼1.1 μs. At a reverse bias of 5 V, we achieved a responsivity of ∼1350 mA W−1. Our device provides an option for on-chip integration.
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Zhang, Lijian, Weikang Lu, Ruijie Qian, Hengliang Wang, Hongtao Xu, Liping Zhu, and Zhenghua An. "Highly responsive silicon-based hot-electron photodetector with self-aligned metamaterial interdigital electrodes." Applied Physics Letters 122, no. 3 (January 16, 2023): 031101. http://dx.doi.org/10.1063/5.0133705.

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A sensitive silicon-based hot-electron photodetector based on a self-aligned metal–semiconductor–metal junction is developed. Nearly perfect absorption is achieved with the metamaterial optical coupling, whereas the absorption difference between the upper and lower interdigital gratings is as large as 70% near the resonant wavelength. Arising from the asymmetric photo-absorption, the measured responsivity values of the self-aligned interdigital grating devices reach 1.89 and 0.78 mA/W under zero biasing conditions at the wavelengths of 1310 and 1550 nm, respectively. These values approach the reported record photo-responsivity of hot-electron photodetectors with conventional metal–semiconductor junctions. In addition, the indication of polarity-switchable photocurrent appears due to the wavelength-dependent absorption of the upper and lower metal interdigital gratings. Our device, combining the self-aligned metamaterial interdigital electrodes with highly asymmetric absorption, shows prospects for applications in photodetection, photovoltaics, integrated optoelectronics, and optical communications.
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Rogalski, Antoni, Piotr Martyniuk, Malgorzata Kopytko, Pawel Madejczyk, and Sanjay Krishna. "InAsSb-Based Infrared Photodetectors: Thirty Years Later On." Sensors 20, no. 24 (December 9, 2020): 7047. http://dx.doi.org/10.3390/s20247047.

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In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.
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Huang, Zhihong, James E. Carey, Mingguo Liu, Xiangyi Guo, Eric Mazur, and Joe C. Campbell. "Microstructured silicon photodetector." Applied Physics Letters 89, no. 3 (July 17, 2006): 033506. http://dx.doi.org/10.1063/1.2227629.

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Hawkins, Aaron R., Thomas E. Reynolds, Derek R. England, Dubravko I. Babic, Mark J. Mondry, Klaus Streubel, and John E. Bowers. "Silicon heterointerface photodetector." Applied Physics Letters 68, no. 26 (June 24, 1996): 3692–94. http://dx.doi.org/10.1063/1.115975.

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Das, K., S. Mukherjee, S. Manna, S. K. Ray, and A. K. Raychaudhuri. "Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity." Nanoscale 6, no. 19 (2014): 11232–39. http://dx.doi.org/10.1039/c4nr03170a.

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Single silicon nanowire-based MSM photodetectors show ultra high responsivity (>104 A W−1) in the near-infra-red region, even at zero bias. The observed photoresponse is sensitive to the polarization of the exciting light, allowing the device to act as a polarization-dependent photodetector.
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Seo, Seung Gi, Jae Hyeon Ryu, Seung Yeob Kim, Jinheon Jeong, and Sung Hun Jin. "Enhancement of Photodetective Properties on Multilayered MoS2 Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors." Nanomaterials 11, no. 6 (June 17, 2021): 1586. http://dx.doi.org/10.3390/nano11061586.

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Photodetectors and display backplane transistors based on molybdenum disulfide (MoS2) have been regarded as promising topics. However, most studies have focused on the improvement in the performances of the MoS2 photodetector itself or emerging applications. In this study, to suggest a better insight into the photodetector performances of MoS2 thin film transistors (TFTs), as photosensors for possible integrated system, we performed a comparative study on the photoresponse of MoS2 and hydrogenated amorphous silicon (a-Si:H) TFTs. As a result, in the various wavelengths and optical power ranges, MoS2 TFTs exhibit 2~4 orders larger photo responsivities and detectivities. The overall quantitative comparison of photoresponse in single device and inverters confirms a much better performance by the MoS2 photodetectors. Furthermore, as a strategy to improve the field effect mobility and photoresponse of the MoS2 TFTs, molecular doping via poly-L-lysine (PLL) treatment was applied to the MoS2 TFTs. Transfer and output characteristics of the MoS2 TFTs clearly show improved photocurrent generation under a wide range of illuminations (740~365 nm). These results provide useful insights for considering MoS2 as a next-generation photodetector in flat panel displays and makes it more attractive due to the fact of its potential as a high-performance photodetector enabled by a novel doping technique.
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SHING, CHRISTOPHER, LIQIAO QIN, and SHALYA SAWYER. "BIO-SENSING SENSITIVITY OF A NANOPARTICLE BASED ULTRAVIOLET PHOTODETECTOR." International Journal of High Speed Electronics and Systems 20, no. 03 (September 2011): 505–13. http://dx.doi.org/10.1142/s0129156411006799.

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Bio-sensing sensitivity of a spectrally selective nanoparticle based ultraviolet (UV) photodetector is characterized in comparison to a silicon photodiode and a photomultiplier tube (PMT). The nanoparticle based photodetector is comprised of poly-vinyl alcohol (PVA) coated zinc-oxide ( ZnO ) nanoparticles deposited on an aluminum-gallium-nitride ( AlGaN ) epitaxially grown substrate. The sensitivity was determined by measuring the fluorescence intensity of the native fluorophore, tryptophan, in Escherichia coli (E-coli, ATCC-25922) cells. Tryptophan intrinsically fluoresces with a peak at 340 nm under 280 nm UV light illumination. It is shown that this detector can sense the concentration of E-coli to 2.5 × 108 cfu/mL while the silicon photodiode cannot detect the intrinsic fluorescence at all. Nevertheless, the PMT outperformed the ZnO nanoparticle- AlGaN substrate based photodetector with the ability to sense E-coli concentrations to 3.91 × 106 cfu/mL. However, because PMT based systems are commonly limited by high dark current, susceptible to environmental changes, sensitive to ambient light, are not spectrally selective and have high power consumption, biological detection systems comprised of these ZnO nanoparticle- AlGaN substrate based photodetectors can be more effective for near real time characterization of potential bacterial contamination.
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Ozsahin, I., B. Uzun, and D. U. Ozsahin. "Selection of photodetectors in nuclear medical imaging using MCDM methods." Journal of Instrumentation 17, no. 06 (June 1, 2022): C06003. http://dx.doi.org/10.1088/1748-0221/17/06/c06003.

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Abstract Photodetectors used in nuclear medical imaging such as single photon emission computed tomography (SPECT) and positron emission tomography (PET) are an important element of radiation detection systems. Selecting the photodetector depends on many physical criteria including quantum efficiency (QE) and gain. The aim of this study is to apply multi-criteria decision-making (MCDM) methods to determine the optimum photodetector based on the evaluation and comparison of complex and multiple criteria. The photodetectors investigated in this study are photomultiplier tube (PMT), avalanche photodiode (APD) and silicon photomultiplier (SiPM). The bias voltage, gain, rise time, and QE were selected since they are considered as the key criteria for the photodetectors. Then, the corresponding values of each criteria were defined and preferred weights were assigned to each criteria based on the desired outcome. The fuzzy preference ranking organization method for enrichment of evaluations (PROMETHEE) and fuzzy technique for order of preference by similarity to ideal solution (TOPSIS) methods were used to evaluate the alternatives. The results showed that conventional PMT came first in the ranking, followed by SiPM, while APD was the least desirable photodetector according to the fuzzy PROMETHEE and fuzzy TOPSIS methods based on the selected criteria and assigned weights. MCDM methods were used to select photodetectors used in PET and SPECT systems. One can incorporate as many alternatives and criteria as needed and assign the weights accordingly.
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Дисертації з теми "Silicon photodetector"

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Meyer, Jason T., and Mahmoud Fallahi. "Ultra-compact integrated silicon photonics balanced coherent photodetector." SPIE-INT SOC OPTICAL ENGINEERING, 2016. http://hdl.handle.net/10150/621797.

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In this paper, the performance simulations of a novel ultra-compact balanced coherent photodetector for operation at a wavelength of 1.5 mu m are presented and design proposals for future fabrication processes are provided. It consists of a compact 2x2 MMI that is evanescently coupled into a germanium MSM photodetection layer. The simulations demonstrate dark current less than 10 nA, capacitance less than 20 fF, and optical bandwidth in the 10-30 GHz range. We propose utilizing the simplicity of direct wafer bonding to bond the detection layer to the output waveguides to avoid complicated epitaxial growth issues. This ultra-compact device shows promise as a high-speed, low-cost integrated silicon photonics solution for the telecommunications infrastructure.
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WANG, YIMING. "Research on graphene/silicon Schottky junction based photodetector." Doctoral thesis, Politecnico di Torino, 2021. http://hdl.handle.net/11583/2950502.

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Meyer, Jason T. "Ultra-compact Integrated Silicon Photonics Balanced Coherent Photodetectors." Thesis, The University of Arizona, 2016. http://hdl.handle.net/10150/613424.

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The design, simulation, and initial fabrication of a novel ultra-compact 2x2 silicon multimode-interference device evanescently coupled to a dual germanium metal-semiconductor-metal (MSM) photodetector is presented. For operation at the standard telecom wavelength of 1.5 µm, the simulations demonstrate high-speed operation at 30 GHz, low dark current in the nanoamp range, and external quantum efficiency of 80%. Error analysis was performed for possible tilt error introduced by hybrid integration of the MSM layer on top of the MMI waveguides by use of surface mount technology (SMT) and direct wafer bonding.
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Al, Johani Ebrahim Dakhil. "NIR silicon photodetector enhancement using photonic crystal cavity resonators." Thesis, Massachusetts Institute of Technology, 2019. https://hdl.handle.net/1721.1/128418.

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Thesis: S.B., Massachusetts Institute of Technology, Department of Physics, 2019
Cataloged from PDF of thesis. "The Table of Contents does not accurately represent the page numbering"--Disclaimer page.
Includes bibliographical references (pages 45-47).
The growing demand for efficient infrared sensors for light ranging, thermal-cameras, and soon, free-space optical communications has yet to be answered. In this study, we use polycrystalline silicon in conjunction with a photonic crystal cavity (PhCC) to enhance light absorption for efficient sensing. We present a cost-effective alternative to the current III-V detectors. By adding a 2D-PhC resonator layer, surface-illuminated light can be confined within a 10 micron region with great intensity, leading to a higher effective path-length and improved detector responsivity. More than 1000 variants of this detector are designed and implemented in a 65nm CMOS process. Using a nearest neighbor method, we find the optimized designs. We validate experimental findings by simulating mode behavior of the PhCC structures using FDTD models. In addition, a numerical study on cavity parameter optimization for achieving high Q-factors and extinction ratios specifically for surface-illumination is presented. We report polysilicon PhCC-enhanced sensors with Q-factors of 6500 resulting in responsivities at 1300nm up to 0.13mA/W -a 25x improvement over non-resonant surface-illuminated Silicon detectors.
by Ebrahim Dakhil Al Johani.
S.B.
S.B. Massachusetts Institute of Technology, Department of Physics
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Park, Hyunsung. "Vertical Silicon Nanowires for Image Sensor Applications." Thesis, Harvard University, 2014. http://nrs.harvard.edu/urn-3:HUL.InstRepos:13065028.

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Conventional image sensors achieve color imaging using absorptive organic dye filters. These face considerable challenges however in the trend toward ever higher pixel densities and advanced imaging methods such as multispectral imaging and polarization-resolved imaging. In this dissertation, we investigate the optical properties of vertical silicon nanowires with the goal of image sensor applications. First, we demonstrate a multispectral imaging system that uses a novel filter that consists of vertical silicon nanowires embedded in a transparent medium. Second, we demonstrate pixels consisting of vertical silicon nanowires with integrated photodetectors. We show that their spectral sensitivities are governed by nanowire radius, and perform color imaging. In addition, we demonstrate polarization-resolving photodetectors consisting of silicon nanowires with elliptical cross sections. Finally, we discuss a dual detector device. Each pixel consists of vertical silicon nanowires (incorporating photodetectors) formed above a silicon substrate (that also incorporates a photodetector). Our method is very practical from a manufacturing standpoint because all filter functions are defined at the same time through a single lithography step. In addition, our approach is conceptually different from current filter-based methods, as absorbed light in our device is converted to photocurrent, rather than discarded. This ultimately presents the opportunity for very high photon efficiency.
Engineering and Applied Sciences
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Filippi, Andrea. "Improving Silicon Photodetectors NIR Responsivity via Hybrid Opto-Plasmonic Resonances." Doctoral thesis, Università degli studi di Padova, 2019. http://hdl.handle.net/11577/3422331.

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During the past twenty years, the photoelectronic industry has grown to incredible proportions, producing devices that have become staples of our every-day life and have completely transformed the way we live. The core technology at the heart of the photoelectronic industry is the “photodetector”. Traditional photodetectors’ performance has dramatically improved after the introduction of nanostructured materials. Among these enhancement materials, plasmonic metal structures are of particular interest due to their peculiar and useful properties, such as optical resonances, high bulk, and surface sensitivities and sub-wavelength light confinement. Plasmonic materials can lead to the development of detectors for novel applications in nano-photonics, biosensing, integrated optics, and lasers. Here, we want to propose an evolution of the common “waveguide detector” design that enables the fabrication of a plasmonic structure, capable of enhancing the absorption efficiency at any desired wavelength, on top of the active area of any kind of traditional semiconductor-based photodetector, including single-photon silicon photomultipliers (SiPMs). Our structure works in a simple tri-layer configuration, metal-dielectric-semiconductor (MIS), by coupling an optical resonance phenomenon with a traditional plasmonic resonance excited on the metal/dielectric interface by means of hole-coupling transmission through an open-slits type of grating. The resulting hybrid opto-plasmonic resonance can drastically enhance the responsivity of a photodetector.
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Duran, Joshua. "Silicon-Based Infrared Photodetectors for Low-Cost Imaging Applications." University of Dayton / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=dayton155653478017603.

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Sevison, Gary Alan. "Silicon Compatible Short-Wave Infrared Photonic Devices." University of Dayton / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1523553057993197.

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PALMIERI, ANDREA. "Multiphysics modelling of high-speed optoelectronic devices for silicon photonics platforms." Doctoral thesis, Politecnico di Torino, 2020. http://hdl.handle.net/11583/2849030.

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Tegegne, Zerihun. "SiGe/Si Microwave Photonic devices and Interconnects towards Silicon-based full Optical Links." Thesis, Paris Est, 2016. http://www.theses.fr/2016PESC1070/document.

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Avec la croissance forte de ces dernières années des objets connectés les technologies de communication optique et radio voient davantage d’opportunités de s’associer et se combiner dans des technologies bas-couts Photoniques-Microondes (MWP). Les réseaux domestiques en sont un exemple. La bande millimétrique notamment, de 57GHz à 67GHz, est utilisé pour contenir les exigences des communications sans fils très haut-débit, néanmoins, la couverture de ces systèmes wireless est limitée en intérieur (indoor) essentiellement à une seule pièce, à la fois du fait de l’atténuation forte de l’atmosphère dans cette bande de fréquence, mais aussi de fait de l’absorption et de la réflexion des murs. Ainsi il nécessaire de déployer une infrastructure pour diffuser l’information au travers d’un système d’antennes distribuées. Les technologiques optiques et photoniques-microondes sont une des solutions envisagées. Les technologies MWP se sont également étendues et couvrent une gamme très large d’applications incluant les communications mobiles 5G, les analyses biomédicales, les communications courtes-distances (datacom), le traitement de signal par voie optique et les interconnexions dans les véhicules et aéronefs. Beaucoup de ces applications requièrent de la rapidité, de la bande-passante et une grande dynamique à la fois, en même temps de demander des dispositifs compacts, légers et à faible consommation. Le cout d’implémentation est de plus un critère essentiel à leur déploiement, en particulier dans l’environnement domestique ainsi que dans d’autres applications variées des technologies MWP.Ce travail de thèse vise ainsi le développement de composants photonique-microondes (MPW) intégrés en technologie BiCMOS ou Bipolaire SiGe/Si, à très bas coût, incluant les phototransistors bipolaires à hétérojonctions (HPT) SiGe/Si, les Diodes Electro-Luminescentes (LED) Si et SiGe, ainsi que l’intégration combinées des composants optoélectroniques et microondes, pour l’ensemble des applications impliquant des courtes longueurs d’ondes (de 750nm à 950nm typiquement).Ces travaux se concentrent ainsi sur les points suivants :La meilleure compréhension de phototransistors SiGe/Si latéraux et verticaux conçus dans une technologie HBT SiGe 80GHz de Telefunken GmbH. Nous traçons des conclusions sur les performances optimales du phototransistor. Les effets de photodétection du substrat et de la dispersion spatiale des flux de porteurs sont analysés expérimentalement. Cette étude aide à développer des règles de dessin pour améliorer les performances fréquentielles du phototransistor HPT pour les applications visées.Dans l’objectif de développer de futures interconnexions intra- et inter- puces, nous concevons des lignes de transmissions faibles-pertes et des guides d’ondes optiques polymères sur Silicium faible résistivité. Il s’agit d’une étape afin d’envisager des plateformes Silicium dans lesquelles les HPT SiGe pourront potentiellement être intégrés de manière performante à très bas coût avec d’autres structures telles que des lasers à émission par la surface (VCSEL), afin de construire un transpondeur optique complet sur une interface Silicium. Le polymère est utilisé comme une interface diélectrique entre les lignes de transmission et le substrat, pour les interconnexions électriques, et pour définir le gain du guide d’onde optique dans les interconnexions optiques.La conception, la fabrication et la caractérisation du premier lien photonique-microonde sur puce Silicium sont menées en se basant sur la même technologie HBT SiGe 80GHz de Telefunken dans la gamme de longueur d’onde 0,65µm-0,85µm. Ce lien optique complétement intégré combine des LEDS Silicium en régime d’avalanche (Si Av LED), des guides d’ondes optiques Nitrure et Silice ainsi qu’un phototransistor SiGe. Un tel dispositif pourrait permettre d’accueillir à l’avenir des communications sur-puce, de systèmes micro-fluidiques et des applications d’analyse biochimiques
With the recent explosive growth of connected objects, for example in Home Area Networks, the wireless and optical communication technologies see more opportunity to merge with low cost MicroWave Photonic (MWP) technologies. Millimeter frequency band from 57GHz to 67GHz is used to accommodate the very high speed wireless data communication requirements. However, the coverage distance of these wireless systems is limited to few meters (10m). The propagation is then limiting to a single room mostly, due to both the high propagation attenuation of signals in this frequency range and to the wall absorption and reflections. Therefore, an infrastructure is needed to lead the signal to the distributed antennas configuration through MWP technology. Moreover, MWP technology has recently extended to address a considerable number of novel applications including 5G mobile communication, biomedical analysis, Datacom, optical signal processing and for interconnection in vehicles and airplanes. Many of these application areas also demand high speed, bandwidth and dynamic range at the same time they require devices that are small, light and low power consuming. Furthermore, implementation cost is a key consideration for the deployment of such MWP systems in home environment and various integrated MWP application.This PhD deals with very cheap, Bipolar or BiCMOS integrated SiGe/Si MWP devices such as SiGe HPTs, Si LEDs and SiGe LEDs, and focused on the combined integration of mm wave and optoelectronic devices for various applications involving short wavelength links (750nm to 950nm).This research focused on the study of the following points:The better understanding of vertical and lateral illuminated SiGe phototransistors designed in a 80 GHz Telefunken GmbH SiGe HBT technology. We draw conclusions on the optimal performances of the phototransistor. The light sensitive Si substrate and two-dimensional carrier flow effects on SiGe phototransistor performance are investigated. This study helps to derive design rules to improve frequency behavior of the HPT for the targeted applications.For future intra /inter chip hybrid interconnections, we design polymer based low loss microwave transmission lines and optical waveguides on low resistive silicon substrate. It is a step to envisage further Silicon based platforms where SiGe HPT could be integrated at ultra-low cost and high performances with other structures such high-speed VCSEL to build up a complete optical transceiver on a Silicon optical interposer. The polymer is used as dielectric interface between the line and the substrate for electrical interconnections and to design the core and cladding of the optical waveguide.The design, fabrication and characterization of the first on-chip microwave photonic links at mid infrared wavelength (0.65-0.85μm) based on 80 GHz Telefunken GmbH SiGe HBT technological processes. The full optical link combines Silicon Avalanche based Light Emitting Devices (Si Av LEDs), silicon nitride based waveguides and SiGe HPT. Such device could permit hosting microfluidic systems, on chip data communication and bio-chemical analysis applications
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Книги з теми "Silicon photodetector"

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AG, Siemens. Silicon photodetectors and infrared emitters data book 1985/86. Mu nchen: Siemens Aktiengesellschaft, 1985.

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2

Miniaturized Silicon Photodetectors. MDPI, 2021. http://dx.doi.org/10.3390/books978-3-0365-0045-4.

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3

Characterization and integration of defect-mediated photodetectors for silicon photonic circuits: Ph.D. Thesis - Department of Engineering Physics, McMaster University, Hamilton, Canada. Library and Archives of Canada, 2011.

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Частини книг з теми "Silicon photodetector"

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Casalino, M., L. Sirleto, M. Gioffre, G. Coppola, M. Iodice, I. Rendina, and L. Moretti. "Fabrication and Characterization of a Silicon Photodetector at 1.55 Micron." In Lecture Notes in Electrical Engineering, 113–16. Dordrecht: Springer Netherlands, 2009. http://dx.doi.org/10.1007/978-90-481-3606-3_19.

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Kurudi, Sreevatsa, Riddhi Nandi, and Bijoy Krishna Das. "Scaling of Silicon PIN Waveguide Photodetector at 1550 nm Wavelength." In Springer Proceedings in Physics, 985–87. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_150.

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Muller, Paul, and Yusuf Leblebici. "Silicon Photodetectors." In Analog Circuits and Signal Processing, 57–72. Dordrecht: Springer Netherlands, 2007. http://dx.doi.org/10.1007/978-1-4020-5912-4_5.

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Zimmermann, Horst. "SiGe Photodetectors." In Silicon Optoelectronic Integrated Circuits, 95–99. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09904-9_4.

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Zimmermann, Horst. "SiGe Photodetectors." In Silicon Optoelectronic Integrated Circuits, 115–20. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-05822-7_4.

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Zimmermann, Horst. "Integrated Silicon Photodetectors." In Silicon Optoelectronic Integrated Circuits, 25–86. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-662-09904-9_2.

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Zimmermann, Horst. "Integrated Silicon Photodetectors." In Silicon Optoelectronic Integrated Circuits, 25–104. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-05822-7_2.

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Zimmermann, Horst. "Silicon Technologies and Integrated Photodetectors." In Springer Series in Optical Sciences, 29–153. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-01521-2_3.

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Zimmermann, Horst. "Silicon Technologies and Integrated Photodetectors." In Springer Series in Photonics, 29–127. Berlin, Heidelberg: Springer Berlin Heidelberg, 2000. http://dx.doi.org/10.1007/978-3-662-04018-8_3.

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Masini, G., A. Ferrari, M. Balucani, S. Monica, Gabriella Maiello, V. Bondarenko, A. Dorofeev, V. Filippov, and N. Kazuchits. "Amorphous Silicon Photodetectors for Oxidised Porous Silicon Based optical Interconnections." In Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics, 347–59. Dordrecht: Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5496-3_26.

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Тези доповідей конференцій з теми "Silicon photodetector"

1

Lee, Ming K., K. R. Peng, and C. H. Chu. "Porous silicon photodetector." In Measurement Technology and Intelligent Instruments, edited by Li Zhu. SPIE, 1993. http://dx.doi.org/10.1117/12.156352.

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Qu, Zhibo, Milos Nedeljkovic, Jordi Soler-Penadés, Ali Z. Khokhar, Wei Cao, Yangbo Wu, Ahmed Osman, et al. "Waveguide integrated graphene mid-infrared photodetector." In Silicon Photonics XIII, edited by Graham T. Reed and Andrew P. Knights. SPIE, 2018. http://dx.doi.org/10.1117/12.2290476.

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3

Dushaq, Ghada, Bruna Paredes, Juan Esteban Villegas, Srinivasa Reddy Tamalampudi, and Mahmoud Rasras. "Hybrid Integration of Multilayers GeP on a Silicon Photonics Platform for Optoelectronic Application." In CLEO: Applications and Technology. Washington, D.C.: Optica Publishing Group, 2022. http://dx.doi.org/10.1364/cleo_at.2022.jw3a.33.

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Анотація:
we demonstrate a waveguide integrated photodetector based on multilayerd 2D GeP operating in the SWIR range. Results show that photodetectors work under bias with a low dark current of few nano-amps and exhibit remarkable photoresponsivity with excellent air stability.
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4

Salamin, Yannick, Ping Ma, Benedikt Baeuerle, Arne Josten, Alexandros Emboras, and Juerg Leuthold. "100 Gbit/s Graphene Photodetector." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2018. http://dx.doi.org/10.1364/iprsn.2018.iw1b.2.

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Park, Hyundai, Alexander W. Fang, Richard Jones, Oded Cohen, Omri Raday, Matthew N. Sysak, Mario J. Paniccia, and John E. Bowers. "A hybrid silicon evanescent photodetector." In 2007 65th Annual Device Research Conference. IEEE, 2007. http://dx.doi.org/10.1109/drc.2007.4373710.

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Moein, Tania, Darius Gailevicius, Tomas Katkus, Soon Hock Ng, Stefan Lundgaard, Simonas Varapnickas, David J. Moss, et al. "Graphene on silicon-nitride photodetector." In Micro + Nano Materials, Devices, and Applications 2019, edited by M. Cather Simpson and Saulius Juodkazis. SPIE, 2019. http://dx.doi.org/10.1117/12.2543391.

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Wang, Bo, Yuping Zhang, Libin Tang, Gongrong Deng, Kar Seng Teng, Gang Wu, and Liyuan Song. "Silicon based mesa heterojunction photodetector." In Earth and Space: From Infrared to Terahertz (ESIT 2022), edited by Junhao Chu. SPIE, 2023. http://dx.doi.org/10.1117/12.2665258.

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Tossoun, Bassem, Di Liang, and Raymond G. Beausoleil. "Heterogeneous quantum-dot microring photodetector on silicon." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2021. http://dx.doi.org/10.1364/iprsn.2021.im5a.4.

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Estrella, Steven, Leif Johansson, Kenneth Hay, Jenna Campbell, and Milan L. Mashanovitch. "High-Performance Photodetector Modules for RF Photonics." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2016. http://dx.doi.org/10.1364/iprsn.2016.iw2a.5.

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Gaberl, W., and H. Zimmermann. "Low-Capacitance Integrated Silicon Finger Photodetector." In 3rd IEEE International Conference on Group IV Photonics, 2006. IEEE, 2006. http://dx.doi.org/10.1109/group4.2006.1708186.

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Звіти організацій з теми "Silicon photodetector"

1

Semendy, Fred, Greg Meissner, and Priyalal Wijewarnasuriya. Sulfur Implanted Black Silicon for Metal Semiconductor Metal (MSM) Photodetectors. Fort Belvoir, VA: Defense Technical Information Center, December 2012. http://dx.doi.org/10.21236/ada571896.

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