Готові списки джерел за темами / Silicon Nano-structured Thin Films

Добірка наукової літератури з теми "Silicon Nano-structured Thin Films"

Автор: Grafiati
Опубліковано: 7 вересня 2023

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Статті в журналах з теми "Silicon Nano-structured Thin Films"

1

Fu, Xiao-An, Sangsoo Noh, Li Chen, and Mehran Mehregany. "Very Thin Poly-SiC Films for Micro/Nano Devices." Journal of Nanoscience and Nanotechnology 8, no. 6 (June 1, 2008): 3063–67. http://dx.doi.org/10.1166/jnn.2008.18321.

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We report characterization of nitrogen-doped, very thin, low-stress polycrystalline silicon carbide (poly-SiC) films suitable for fabricating micro/nano devices. The poly-SiC films are deposited on 100 mm-diameter (100) silicon wafers in a large-scale, hot-wall, horizontal LPCVD furnace using SiH2Cl2 and C2H2 as precursors and NH3 as doping gas. The deposition temperature and pressure are fixed at 900 °C and 4 Torr, respectively. The deposition rate increases substantially in the first 50 minutes, transitioning to a limiting value thereafter. The deposited films exhibit (111)-orientated polycrystalline 3C-SiC texture. HR-TEM indicates a 1 nm to 4 nm amorphous SiC layer at the SiC/silicon interface. The residual stress and the resistivity of the films are found to be thickness dependent in the range of 100 nm to 1 μm. Films with thickness less than 100 nm suffer from voids or pinholes. Films thicker than 100 nm are shown to be suitable for fabricating micro/nano devices.
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2

Alet, Pierre-Jean, Serge Palacin, and Pere Roca i. Cabarrocas. "Low-temperature growth of nano-structured silicon thin films on ITO initiated by metal catalysts." Thin Solid Films 517, no. 23 (October 2009): 6405–8. http://dx.doi.org/10.1016/j.tsf.2009.02.106.

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3

Das, Debajyoti. "Quantum confinement effects in nano-silicon thin films." Solid State Communications 108, no. 12 (November 1998): 983–87. http://dx.doi.org/10.1016/s0038-1098(98)00478-5.

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4

Yu, Gui Wen, Jing Dong, Ye Tian, Wen Xin Li, and Xue Gong. "Prepared and Surface Analyzed of Nano-Silicon Nitride Thin Films." Advanced Materials Research 233-235 (May 2011): 2015–18. http://dx.doi.org/10.4028/www.scientific.net/amr.233-235.2015.

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Thin silicon nitride films were prepared on PET by r.f. reactive sputtering. Deposition Rate, reactive mechanisms, the thickness attribution, chemical stoichiometry and impurity were studied by means of RBS, XPS, and ellipsometer. Results show that chemical stoichiometric films with N-to-Si atomic ratio of 4:3 were achieved even at room temperature. Depth profiles of XPS and SIMS reveal that oxide exists only at the interface between nitride and substrate and Ar atoms are buried in the films.
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5

Mehmet zkan, Mehmet zkan, and Sercen Sadik Erdem Sercen Sadik Erdem. "Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique." Journal of the chemical society of pakistan 43, no. 3 (2021): 253. http://dx.doi.org/10.52568/000581/jcsp/43.03.2021.

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In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.
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Mehmet zkan, Mehmet zkan, and Sercen Sadik Erdem Sercen Sadik Erdem. "Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique." Journal of the chemical society of pakistan 43, no. 3 (2021): 253. http://dx.doi.org/10.52568/000581.

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Анотація:
In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.
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Suresh, S., T. G. Nieh, and B. W. Choi. "Nano-indentation of copper thin films on silicon substrates." Scripta Materialia 41, no. 9 (October 1999): 951–57. http://dx.doi.org/10.1016/s1359-6462(99)00245-6.

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Acosta, E., N. M. Wight, V. Smirnov, J. Buckman, and N. S. Bennett. "Hydrogenated Nano-/Micro-Crystalline Silicon Thin-Films for Thermoelectrics." Journal of Electronic Materials 47, no. 6 (November 30, 2017): 3077–84. http://dx.doi.org/10.1007/s11664-017-5977-8.

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Gracin, D., A. Gajović, K. Juraić, M. Čeh, Z. Remeš, A. Poruba, and M. Vaněček. "Spectral response of amorphous–nano-crystalline silicon thin films." Journal of Non-Crystalline Solids 354, no. 19-25 (May 2008): 2286–90. http://dx.doi.org/10.1016/j.jnoncrysol.2007.10.076.

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10

Zhao, Xiao Feng, Dian Zhong Wen, Yang Li, Yuan Xin Hou, Chun Peng Ai, Zhi Qiang Wang, and De Jun Xiu. "Structure Design, Fabrication and Characteristics of Polysilicon Nano-Thin Films Resistances Pressure Sensor Based on MEMS Technology." Key Engineering Materials 483 (June 2011): 200–205. http://dx.doi.org/10.4028/www.scientific.net/kem.483.200.

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A polysilicon nano-thin films pressure sensor was designed and fabricated on single crystal silicon substrate by MEMS technology in this paper, and the sensor is composed by Wheatstone bridge structure with four polysilicon nano-thin films resistances fabricated on squared silicon membrane. The experiment result shows that, under constant current power supply of 0.875mA , full scale output is 24.05 mV at room temperature, sensitivity is 0.15 mV/kPa, when the temperatures are from -20 to 80°C, the coefficient of zero temperature and sensitivity temperature is –960 ppm/°C and –820 ppm /°C respectively.
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Дисертації з теми "Silicon Nano-structured Thin Films"

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Pepenene, Refuoe Donald. "Macroscopic and Microscopic surface features of Hydrogenated silicon thin films." University of the Western Cape, 2018. http://hdl.handle.net/11394/6414.

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Анотація:
Magister Scientiae - MSc (Physics)
An increasing energy demand and growing environmental concerns regarding the use of fossil fuels in South Africa has led to the challenge to explore cheap, alternative sources of energy. The generation of electricity from Photovoltaic (PV) devices such as solar cells is currently seen as a viable alternative source of clean energy. As such, crystalline, amorphous and nanocrystalline silicon thin films are expected to play increasingly important roles as economically viable materials for PV development. Despite the growing interest shown in these materials, challenges such as the partial understanding of standardized measurement protocols, and the relationship between the structure and optoelectronic properties still need to be overcome.
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Ohta, Taisuke. "Heteroepitaxy of gallium-selenide on Si(100) and (111) : new silicon-compatible semiconductor thin films for nano structure formation /." Thesis, Connect to this title online; UW restricted, 2004. http://hdl.handle.net/1773/10592.

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Towfie, Nazley. "Dynamic variation of hydrogen dilution during hot-wire chemical vapour deposition of silicon thin films." Thesis, University of the Western Cape, 2013. http://hdl.handle.net/11394/3813.

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It has been debated that among all the renewable energy alternatives, only solar energy offers sufficient resources to meet energy demands. Silicon thin film solar cells are at the frontier of commercial solar technology. Hot wire chemical vapour deposition (HWCVD) is the technique of choice for silicon thin film deposition due to the absence of ion bombardment and its independence toward geometry or electromagnetic properties of the substrate, as seen by plasma enhanced chemical vapour deposition (PECVD). With the implementation of nanostructures in a multi-band gap tandem solar cell, considerable improvement has been achieved over the single junction solar cells. Defect assisted tunnelling processes at the junctions between individual solar cells in a tandem structure solar cell largely affect the efficiency of these solar cells. In this contribution, the investigation toward the improvement of silicon thin films for tandem solar cell application is initiated. This study reports on the effects of hydrogen dilution and deposition time on six silicon thin films deposited at six specific deposition regimes. The thin film properties are investigated via X-Ray diffraction analysis, Raman spectroscopy, Fourier transform infra-red spectroscopy, elastic recoil detection analysis, scanning and transmission electron microscopy and UV-visible spectroscopy. This investigation revealed the dominating etching effect of atomic hydrogen with the increase in hydrogen dilution and a bonded hydrogen content (CH) exceeding 10 at.% for each of the six thin films. The optically determined void volume fraction and static refractive index remain constant, for each thin film, with the change in CH. A new deposition procedure, utilising the deposition conditions of the previously investigated thin films, is performed by HWCVD to deposit two silicon thin films. This deposition procedure involved either increasing (protocol 1) or decreasing (protocol 2) hydrogen dilution during deposition. Structural and optical variation with depth was observed for the dynamically deposited silicon thin films, with nano-voids existing across the entire cross section and bond angle variations which are indicative of good structural order. The optical absorption curves differ for the two silicon thin films whereas the optical density remains constant for both.
>Magister Scientiae - MSc
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4

Bossard, Maxime. "Développement de moules intrinsèquement antiadhésifs pour l'étude du collage en nano-impression." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAT010/document.

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La nano-impression est une technique de lithographie qui consiste à reproduire les motifs contenus dans un moule, par pressage de celui-ci sur un film de résine. Cette technologie – rapide et peu coûteuse à mettre en oeuvre – est prometteuse mais son utilisation à l’échelle industrielle nécessite encore des améliorations notamment en termes de limitation de la défectivité des motifs reproduits. Des solutions existent pour pallier cette limitation, à travers notamment l’utilisation de traitements antiadhésifs qui se greffent en surface des moules et permettent de favoriser les étapes de démoulage. Cependant, ces traitements de moules ont une durée de vie limitée, ce qui limite la rentabilité globale du procédé de nano-impression.Ce projet de thèse s’intéresse à la question de la durabilité des moules et propose des matériaux alternatifs pour la fabrication de moules de nano-impression.Pour répondre aux exigences des acteurs de la nano-impressions, quatre matériaux (le Diamond-like carbon, le carbure de silicium et leurs versions dopées en fluor) ont été développés pour une utilisation en tant que matériaux de moules alternatifs au silicium et au quartz. La caractérisation des propriétés physiques et physico-chimiques a été réalisée de sorte à sélectionner les matériaux les plus prometteurs qui ont ensuite été structurés pour une utilisation en tant que moules fonctionnels.Les propriétés d’adhérence de ces matériaux ont ensuite été caractérisées tant en nano-impression assistée par ultraviolets qu’en nano-impression thermique. Ces essais ont permis de montrer que les matériaux développés, malgré une grande énergie de surface, présentent intrinsèquement un caractère antiadhésif lié à leur inertie chimique
Nanoimprint is a lithography technology which consists in structuring a polymer film by pressing a structured mold into it. This promising method is low-cost and has a high throughput, but its implementation in industry still requires improvements, particularly regarding the defectivity of imprinted structures. To circumvent this defectivity, the use of antiadhesive treatments, grafted to the mold surface has been developed to facilitate the demolding step. However, these treatments have a limited lifespan, thereby empeding the global nanoimprint cost-effectiveness.This thesis focuses on mold durability and suggests alternative materials for the fabrication of nanoimprint molds.To match nanoimprint requirements, four materials (Diamond-like carbon, Silicon carbide and their fluorine-doped versions) were developed to be used as alternatives to silicon and quartz. Physical and physico-chemical characterization were carried out, so as to determine the best candidates that were then patterned, leading to usable molds.Adhesion properties of these materials were then characterized both in UV-nanoimprint and thermal-nanoimprint procedures. These investigations showed that despite their high surface energies, the developed materials exhibit intrinsically antiadhesive properties, thanks to their chemical inertness
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Saxena, Shubham. "Nanolithography on thin films using heated atomic force microscope cantilevers." Thesis, Available online, Georgia Institute of Technology, 2006, 2006. http://etd.gatech.edu/theses/available/etd-08302006-223629/.

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Kirkpatrick, Timothy. "Geometric photovoltaics applied to amorphous silicon thin film solar cells." Thesis, Boston College, 2012. http://hdl.handle.net/2345/2892.

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Thesis advisor: Michael J. Naughton
Geometrically generalized analytical expressions for device transport are derived from first principles for a photovoltaic junction. Subsequently, conventional planar and unconventional coaxial and hemispherical photovoltaic architectures are applied to detail the device physics of the junction based on their respective geometry. For the conventional planar cell, the one-dimensional transport equations governing carrier dynamics are recovered. For the unconventional coaxial and hemispherical junction designs, new multi-dimensional transport equations are revealed. Physical effects such as carrier generation and recombination are compared for each cell architecture, providing insight as to how non-planar junctions may potentially enable greater energy conversion efficiencies. Numerical simulations are performed for arrays of vertically aligned, nanostructured coaxial and hemispherical amorphous silicon solar cells and results are compared to those from simulations performed for the standard planar junction. Results indicate that fundamental physical changes in the spatial dependence of the energy band profile across the intrinsic region of an amorphous silicon p-i-n junction manifest as an increase in recombination current for non-planar photovoltaic architectures. Despite an increase in recombination current, however, the coaxial architecture still appears to be able to surpass the efficiency predicted for the planar geometry, due to the geometry of the junction leading to a decoupling of optics and electronics
Thesis (PhD) — Boston College, 2012
Submitted to: Boston College. Graduate School of Arts and Sciences
Discipline: Physics
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7

Pastorelli, Francesco. "Light enhancements in nano-structured solar cells." Doctoral thesis, Universitat Politècnica de Catalunya, 2013. http://hdl.handle.net/10803/145638.

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In this century some of our main issues are energy shortage and pollution. This work will briefly describe these problems, proposing a plan of action combining energy saving and different sustainable energy sources. Within different types of renewable energy sources, solar energy is the most abundant one. To make solar energy a more sustainable and cost effective technology we focus on enhancing the optical characteristics of thin film solar cells. In this category, organic solar cells are good options for their exiguous amount of material and the low energy needed for the fabrication process. This technology can be lightweight, transparent, flexible and conformal in order to be applied to and integrated in various architectural solutions and consumer electronics. After a study of the physics of such devices and on how to optically enhance their performances, we will show some examples where we theoretically and experimentally collect the solar radiation with optical antennas. We report, for the first time in literature, a nanogap antenna that efficiently couples the light in our active material thin film. Finally, we elaborate on the concept of building integrated photovoltaics introducing some examples of solar façades. Based on our research, we are able to design and fabricate an organic transparent solar cell with a visible transparency above 20% and an optically enhanced photon-electron conversion efficiency remarkably similar to its opaque equivalent.
En el presente siglo, algunas de las prioridades son la escasez de la energía y la contaminación. Este trabajo describirá brevemente estos problemas y propondrá un plan de acción que combina el ahorro energético con diferentes fuentes sostenibles de energía. Dentro de estas fuentes de energía renovables, la energía solar es la más abundante. Con el objetivo de hacer la tecnología solar más sostenible y eficiente económicamente nos concentramos en aumentar las características ópticas en celdas solares de película delgada. Dentro de esta categoría, las celdas solares orgánicas son una buena opción porque su desarrollo requiere bajas cantidades de materiales y su fabricación es de baja energía embebida. Adicionalmente, esta tecnología puede ser liviana, transparente, flexible mecánicamente y modular para ser aplicada e integrada en varias soluciones arquitectónicas y de electrónica de consumo. Luego de estudiar los procesos físicos en tales dispositivos y de determinar las metodologías para aumentar ópticamente sus desempeños, mostraremos algunos ejemplos donde teórica y experimentalmente se colecta la radiación solar mediante antenas ópticas. Se reporta por primera vez, una antena de nanogap que acopla eficientemente la luz en la capa activa de la celda solar. Finalmente, se desarrolla el concepto de tecnología fotovoltaica integrada en edificaciones tras introducir algunos ejemplos de fachadas solares. Basados en nuestra investigación, fue posible diseñar y fabricar una celda solar orgánica transparente cuya transparencia en el rango visible estuvo por encima del 20% y una eficiencia de conversión foton-electron aumentada ópticamente que resulto notoriamente similar a la celda solar orgánica opaca equivalente.
La rareté grandissante des ressources en énergie associée à une augmentation de la pollution font partie des enjeux plus importants de ce siècle. Cette thèse décrira brièvement ces deux problématiques et proposera un plan d’action combinant économie d’énergie et diversité des sources d’énergies renouvelables. Parmi les formes d’énergies renouvelables disponibles, l’énergie solaire est la plus abondante. Pour faire de l’énergie solaire une ressource plus durable et plus rentable économiquement, nous proposons d’amplifier les propriétés optiques de cellules solaires en couches minces. Dans cette catégorie, les cellules solaires organiques représentent un choix pertinent de part la faible quantité de matériau nécessaire ainsi que la faible énergie nécessaire au procédé de fabrication. Cette technologie peut être légère, transparente et flexible de sorte qu’elle peut être utilisée dans différentes solutions architecturales s’adaptant à des produits électroniques pour le grand publique. Suivra la théorie sous jacente à ces dispositifs et l’explication de la manière dont leurs performances sont améliorées. Nous présenterons quelques exemples où l’on collecte la radiation solaire avec une antenne optique. Ainsi, nous faisons la toute première démonstration d’une antenne auto-assemblée qui couple efficacement la lumière dans le matériau constituant la couche mince que nous utilisons. Finalement, nous développons le concept de cellules photovoltaïques intégrées en présentant différents cas de façades solaires. Ces travaux nous ont permis de concevoir et de fabriquer une cellule solaire organique transparente avec une transparence dans le visible de 20% et une efficacité de conversion photon-électron améliorée, similaire à une cellule équivalente opaque.
La difficile reperibilità di risorse energetiche e l’inquinamento sono alcuni dei problemi più importanti di questo secolo. In questo lavoro saranno presentati brevemente questi temi proponendo un piano d’azione che abbini il risparmio energetico alle differenti fonti di energia rinnovabili. Nell’insieme delle fonti energetiche rinnovabili l’energia solare è senz’altro la più abbondante. Con l’obbiettivo di rendere lo sfruttamento di tale energia più sostenibile ed economicamente vantaggioso, ci premuriamo di migliorare le caratteristiche ottiche di celle fotovoltaiche a film sottile. In questa categoria utilizziamo, tra le diverse opzioni, le celle solari organiche in quanto la loro fabbricazione richiede una quantità di materiale minimo e un basso consumo energetico. Inoltre questi tipi di dispositivi possono essere leggeri, trasparenti, flessibili e conformabili alle superfici su cui sono applicati. Questa è una tecnologia che potrebbe essere implementata e integrata in varie soluzioni architettoniche o nell’ elettronica di consumo. Dopo aver presentato i principi fisici di tali dispositivi e determinato le metodologie ottiche per aumentarne le prestazioni, vengono illustrati alcuni esempi dove, teoricamente e sperimentalmente, riusciamo a intercettare la radiazione solare con antenne ottiche. Riportiamo, per la prima volta in letteratura, un’antenna ottica con nano-gap che accoppia efficacemente la luce solare nel nostro materiale attivo a film sottile. Nell’ultima parte sviluppiamo il concetto di tecnologia solare integrata negli edifici, introducendo alcuni esempi di facciate solari. Basando il design sulla nostra ricerca, è possibile realizzare una cella solare fotovoltaica organica trasparente, con una trasparenza superiore del 20% e un’ efficienza di conversione fotone-elettrone migliorata grazie all’ottica, che risulta molto vicina all’ equivalente cella fotovoltaica organica non trasparente.
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Hsuan, Kai Chao, and 趙旋凱. "Preparation and Study of Nano-Porous-Silicon (NPS) Thin Films for Applications of Ultra-Violet (UV) Sensing Devices." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/41982375893335064514.

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Анотація:
碩士
南台科技大學
光電工程系
98
There had been few published literatures of porous-silicon (PS) on ultra-violet (UV) photodetectors, because the optical absorption of this material ranged from visible to infrared light. Although as a wide-bandgap semiconductor due to the quantum-size effect, nano-porous-Si (NPS) also can hardly absorb UV energy due to its insufficiently large bandgap (< 2ev). In this thesis, oxidized nano-porous-Si (ONPS) that prepared by rapid-thermally oxidizing NPS thin-films was proposed for UV sensing applications. NPS thin-films with uniformly distributed Si nano-crystallites (3nm~10nm) were firstly prepared on heavily doped p+-type (100) Si wafers by anodic etching processes with low etching current density (10mA/cm2 ). Then ONPS films were obtained from rapid-thermal-oxidation (RTO) treatment of NPS at 850℃ for 90 sec. Photo-sensing diodes were made with ONPS films as the light-absorption layers, after depositing inter-digitated aluminum (Al) electrodes on the front sides of the devices. The optical bandgap of a NPS film was measured about 1.6ev, whereas it was raised to 3.5ev for the as-formed ONPS film after RTO processes. The photo-response spectra of a NPS film located within wavelengths from 500nm to 900nm. However, an ONPS film exhibited high photoresponsivity for incident wavelengths between 300nm and 400nm, showing it was very suitable for UV sensing applications. Furthermore, an ONPS photodiode can achieve a high photo-to-dark current ratio up to about 2000 under an incident light wavelength of 350nm while obtained quite low dark current down to 7.3A/cm2. Experimental results indicated that ONPS photodetectors had high UV sensitivity. Finally, a tentative carrier transport mechanism was proposed to illustrate the UV photoresponse processes in an ONPS structure.
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9

Li, Handong. "Nano-structured PECVD silicon films and their device applications." 2004. http://etda.libraries.psu.edu/theses/approved/WorldWideIndex/ETD-498/index.html.

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10

XIANG, JIAN-YING, and 向建穎. "Fabrication and Characterization of Nano-structured MoN Thin Films." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/42dmn6.

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Анотація:
碩士
國立聯合大學
材料科學工程學系碩士班
105
In this study, the molybdenum nitride, MoN, multilayer coatings modulated by single layer molybdenum nitride with distinguished structure was proposed. The microstructures with crystalline, preferred orientation and featureless structure, respectively, are fabricated by magnetization sputtering with the input power and gas inlet control. Three kinds of multilayer coatings were successfully prepared by stacking of MoN single layer coating of above mentioned three structural features. The structure of the multilayer coatings were controlled at a total of 20 layers and 1 um, while each building layer was 50 nm. Sample M1-2, which is formed by alternately stacking of the crystalline and the preferred orientation structure, exhibits a strong suppression on formation of the preferred orientation, and the columnar crystalline structure is confined to each of the building layers. On the other hand, the continuous columnar crystalline structure are observed in the microstructure of M1-7and M2-7 which are made of crystalline/amorphous, and preferred orientation/amorphous structures, respectively. The atoms in the amorphous layer are easily to grow along the grain in the previous layer. In particular, the continuous columnar crystalline structure with (111) preferred orientation grown through several layers is observed in the M2-7 coating. The multilayers showed excellent adhesion as compared to the single layer coatings. M1-7 exhibited the superior adhesion, strength with almost no peeled coating fragments around the edges of the pit. The tribological behavior of multilayer and single layer was also discussed.
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Частини книг з теми "Silicon Nano-structured Thin Films"

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Filikov, V. A., A. I. Popov, V. P. Cheparin, and V. A. Ligachev. "Morphology Formation in Silicon-Based Thin Amorphous Films as Self-Organization Manifestation." In Nano-Crystalline and Thin Film Magnetic Oxides, 347–51. Dordrecht: Springer Netherlands, 1999. http://dx.doi.org/10.1007/978-94-011-4493-3_32.

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Moon, Seung Jae. "In Situ Fast Temperature Measurement of Silicon Thin Films during the Excimer Laser Annealing." In Experimental Mechanics in Nano and Biotechnology, 195–98. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-415-4.195.

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3

Moon, Seung Jae. "Determination of Thermal Conductivity of Amorphous Silicon Thin Films via Non-Contacting Optical Probing." In Experimental Mechanics in Nano and Biotechnology, 689–92. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-415-4.689.

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4

Rao, Ashwath, Joyline Dsa, Saurabh Goyal, and B. R. Singh. "Stress Induced Degradation in Sputtered ZrO2 Thin Films on Silicon for Nano-MOSFET’s." In Physics of Semiconductor Devices, 555–58. Cham: Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_139.

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5

Chu, K., and Yao Gen Shen. "Nano-Structured TiN/TiBN Multilayer Thin Films." In Advances in Composite Materials and Structures, 889–92. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-427-8.889.

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6

Sharma, Prachi, and Navneet Gupta. "Electronic Behavior of Nanocrystalline Silicon Thin Film Transistor." In Advanced Structured Materials, 209–33. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-6214-8_8.

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7

Que, Wen Xiu, M. Sun, C. Y. Jia, L. Cheng, Z. Sun, L. L. Wang, and X. Hu. "Titania/Ormosils Organic-Inorganic Hybrid Thin Films Doped with Azobenzene Small Molecules for Optical Switch Applications." In Semiconductor Photonics: Nano-Structured Materials and Devices, 11–13. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.11.

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8

Bogdanov, Ž., N. Popović, M. Zlatanović, B. Goncić, Z. Rakočević, and S. Zec. "Nano-Structured TiN Thin Films Deposited by Single Ion Beam Reactive Sputtering." In Materials Science Forum, 303–8. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-441-3.303.

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Di, Yu Xian, Xin Hua Ji, Ming Hu, Yu Wen Qin, and Jin Long Chen. "Residual Stress Measurement of Porous Silicon Thin Film by Substrate Curvature Method." In Experimental Mechanics in Nano and Biotechnology, 223–26. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-415-4.223.

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Singh, Priyanka, Shailesh N. Sharma, G. Bhagavannarayana, M. Husain, and M. Lal. "Demonstration of the Formation of Porous Silicon Films with Superior Properties Formed on Polished (100) Si with Screen-Printed Back Contacts." In Semiconductor Photonics: Nano-Structured Materials and Devices, 249–53. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.249.

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Тези доповідей конференцій з теми "Silicon Nano-structured Thin Films"

1

Wei, Yayi, Guozhen Zheng, and Yuliang L. He. "Interfacial deep levels in nano-crystalline silicon films." In Thin Film Physics and Applications: Second International Conference, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190784.

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2

Kolodziej, Michal, Tomasz Kolodziej, and Andrzej Kolodziej. "Methods of nano-crystallization of thin silicon films." In 2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC). IEEE, 2015. http://dx.doi.org/10.1109/pvsc.2015.7356309.

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3

Miyazaki, Koji, Yoshizumi Iida, Daisuke Nagai, and Hiroshi Tsukamoto. "Molecular Dynamics Simulations of Heat Conduction in Nano-Structured Silicon." In ASME/JSME 2007 Thermal Engineering Heat Transfer Summer Conference collocated with the ASME 2007 InterPACK Conference. ASMEDC, 2007. http://dx.doi.org/10.1115/ht2007-32752.

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Анотація:
We carried out molecular dynamics simulations (MD) of heat conduction in Si thin film and Si films with a nano-hole to represent the nano-structure, in order to investigate the mechanism of the thermal conductivity reduction of nano-structured materials. The Stillinger-Weber potential is used in this study. Different temperatures are applied at the both sides of boundaries of the calculation domain in the z-direction, and periodic boundary conditions are applied in the x and y directions. The calculated temperature profile of a Si thin film of 10.86nm thickness is compared to that calculated by using the phonon Boltzmann transport equation (BTE). These agreed reasonably well with each other, and the phonon mean free path of Si is estimated to be several tens of nanometers. Molecular dynamics simulation of Si at the uniform temperature of 800K is also carried out. Phonon dispersion curves are calculated by using the time-space 2D Fourier transform. The phonon modes at high frequency are not present in nano-structures of Si. We discuss the mechanism of the reduction of the thermal conductivity of nano-structured material on the atomic scale.
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4

Mayer, Alexandre, Jérôme Muller, Aline Herman, and Olivier Deparis. "Optimized absorption of solar radiations in nano-structured thin films of crystalline silicon via a genetic algorithm." In SPIE Nanoscience + Engineering, edited by Ganapathi S. Subramania and Stavroula Foteinopoulou. SPIE, 2015. http://dx.doi.org/10.1117/12.2185672.

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5

Mathe, Vijaya K., Dinesh K. Sood, and Jason P. Hayes. "Patterning of thin films of TiNi deposited on silicon substrate." In SPIE's International Symposium on Smart Materials, Nano-, and Micro- Smart Systems, edited by Dinesh K. Sood, Ajay P. Malshe, and Ryutaro Maeda. SPIE, 2002. http://dx.doi.org/10.1117/12.471927.

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6

Yan, Baojie, Laura Sivec, Guozhen Yue, Chun-Sheng Jiang, Jeffrey Yang, and Subhendu Guha. "Effect of dual-function nano-structured silicon oxide thin film on multi-junction solar cells." In 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6186470.

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7

Abadli, S., and F. Mansour. "Growth of Grains Effect on Boron Diffusion in Heavily Implanted Polycrystalline silicon Thin Films." In 2006 International Conference on MEMS, NANO, and Smart Systems. IEEE, 2006. http://dx.doi.org/10.1109/icmens.2006.348207.

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8

Tao, Ke, Dexian Zhang, Yun Sun, Linshen Wang, Jingfang Zhao, Ying Xue, Yuanjian Jiang, Hongkun Cai, Yanping Sui, and Jin Wang. "Boron doped hydrogenated nanocrystalline silicon thin films prepared by layer-by-layer technique and its application in n-i-p flexible amorphous silicon thin film solar cells." In 2009 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems. IEEE, 2009. http://dx.doi.org/10.1109/nems.2009.5068588.

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9

Yang, Huan, Ben Q. Li, and Changhong Liu. "Enhanced Light Absorption in Thin Crystalline Silicon Solar Cells With Silica Nanoparticles." In ASME 2015 International Mechanical Engineering Congress and Exposition. American Society of Mechanical Engineers, 2015. http://dx.doi.org/10.1115/imece2015-52492.

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Анотація:
In this paper, numerical simulations are performed to investigate the effects of different configurations of dielectric SiO2 particles on the improvement of light absorption in 2-μm single crystal silicon photovoltaic solar cells. The numerical model is developed on the basis of the FDTD solution of the transient Maxwell equations and checked with analytical solutions for simple configurations and against experimental measurements of light absorption in bare Si films. The numerical model is also checked for mesh sensitivity such that the computed data are approximately mesh-insensitive. Computed results are analyzed and the short circuit current of the Si films is used as a measure of the efficiency for light trapping in Si films. Results show that with SiO2 nanoparticles closely packed atop the Si film, good improvement in light absorption efficiency is achieved if the particle is 700 nm in diameter. This is considered to be attributed to the anti-reflection effect of the particle layer and the whispering gallery mode of SiO2 particles excited by the incident light. If the closely arranged SiO2 nanoparticles are embedded half-way into a Si film through its top surface, the light absorption is enhanced by ∼120%, approaching to the Yablonovitch limit. The structured surface of the Si film can almost realize 100% anti-reflection of incident, because the use of the half embedded SiO2 particles in the top layer of the Si film creates a graded transition of the effective refractive index along the direction of incident; and as a result almost all the light with the wavelength below or near 500nm are absorbed due to the higher imaginary part of the refractive index. The improvement in light absorption with the wavelength greater than 500nm comes, however, from the resonance behavior of the SiO2 nanoparticles. Experiments are now planned and measurements of light absorption will be conducted with a photospectrometer to validate the above calculations.
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10

Chimmalgi, A., D. J. Hwang, and C. P. Griogoropoulos. "Nanoscale Rapid Melting and Crystallization of Amorphous Silicon Thin Films." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-82208.

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Nanostructuring of thin films is gaining widespread importance owing to ever-increasing applications in a variety of fields. The current study details nanosecond laser-based rapid melting and crystallization of thin amorphous silicon (a-Si) films at the nanoscale. Two different near-field processing schemes were employed. In the first scheme, local field enhancement in the near-field of a SPM probe tip irradiated with nanosecond laser pulses was utilized. As a second approach, the laser beam was spatially confined by a cantilevered near field scanning microscope tip (NSOM) fiber tip. Details of various modification regimes produced as a result of the rapid a-Si melting and crystallization transformations that critically depend on the input laser fluence are presented. At one extreme corresponding to relatively high applied fluence, ablation area surrounded by a narrow melt region was observed. At the other extreme, where the incident laser energy density is much lower, single nanostructures with a lateral dimension of ~90 nm were defined. The ability to induce nucleation and produce single semiconductor nanostructures in a controlled fashion may be crucial in the field of nano-opto-electronics.
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