Готові списки джерел за темами / Silicon microphotonics

Добірка наукової літератури з теми "Silicon microphotonics"

Автор: Grafiati

Опубліковано: 10 грудня 2022

Оновлено: 21 лютого 2023

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Статті в журналах з теми "Silicon microphotonics"

Kimerling, Lionel C. "Silicon microphotonics." Applied Surface Science 159-160 (June 2000): 8–13. http://dx.doi.org/10.1016/s0169-4332(00)00126-4.

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de Dood, M. J. A., A. Polman, T. Zijlstra, and E. W. J. M. van der Drift. "Amorphous silicon waveguides for microphotonics." Journal of Applied Physics 92, no. 2 (July 15, 2002): 649–53. http://dx.doi.org/10.1063/1.1486055.

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Fitzgerald, E. A., and L. C. Kimerling. "Silicon-Based Microphotonics and Integrated Optoelectronics." MRS Bulletin 23, no. 4 (April 1998): 39–47. http://dx.doi.org/10.1557/s0883769400030256.

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The need for integrated optical interconnects in electronic systems is derivedfrom the cost and performance of electronic systems. If we examine the cost of all interconnects, it becomes apparent that there is an exponential growth in cost per interconnect with the length of the interconnect. A remarkable feature of interconnect cost is that the exponential relation holds over all length scales—from the shortest interconnects on a chip to the longest interconnects in global telecommunications networks. Longer interconnects are drastically more expensive, and these costs are ultimately related to the labor cost associated with each interconnect. Given this economic pressure, it is not surprising that there is a driving force to condense more functions locally on the same chip, board, or system. In condensing these functions, the number of long interconnects are decreased and the overall cost of the electronic system decreases dramatically. A specific glaring example of this driving force is Si complementary-metal-oxide-semiconductor (CMOS) technology, especially the case of microprocessors. In the Si microprocessor case, the flood gates to interconnect condensation were opened and the miraculous trend of lower cost for exponentially increasing performance was revealed.

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Ferrara, Maria Antonietta, and Luigi Sirleto. "Integrated Raman Laser: A Review of the Last Two Decades." Micromachines 11, no. 3 (March 23, 2020): 330. http://dx.doi.org/10.3390/mi11030330.

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Important accomplishments concerning an integrated laser source based on stimulated Raman scattering (SRS) have been achieved in the last two decades in the fields of photonics, microphotonics and nanophotonics. In 2005, the first integrated silicon laser based upon SRS was realized in the nonlinear waveguide. This breakthrough promoted an intense research activity addressed to the realization of integrated Raman sources in photonics microstructures, like microcavities and photonics crystals. In 2012, a giant Raman gain in silicon nanocrystals was measured for the first time. Starting from this impressive result, some promising devices have recently been realized combining nanocrystals and microphotonics structures. Of course, the development of integrated Raman sources has been influenced by the trend of photonics towards the nano-world, which started from the nonlinear waveguide, going through microphotonics structures, and finally coming to nanophotonics. Therefore, in this review, the challenges, achievements and perspectives of an integrated laser source based on SRS in the last two decades are reviewed, side by side with the trend towards nanophotonics. The reported results point out promising perspectives for integrated micro- and/or nano-Raman lasers.

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Tsuchizawa, T., K. Yamada, H. Fukuda, T. Watanabe, Jun-ichi Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita. "Microphotonics devices based on silicon microfabrication technology." IEEE Journal of Selected Topics in Quantum Electronics 11, no. 1 (January 2005): 232–40. http://dx.doi.org/10.1109/jstqe.2004.841479.

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Borselli, Matthew, Thomas J. Johnson, and Oskar Painter. "Measuring the role of surface chemistry in silicon microphotonics." Applied Physics Letters 88, no. 13 (March 27, 2006): 131114. http://dx.doi.org/10.1063/1.2191475.

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Lin, Pao Tai, Vivek Singh, Yan Cai, Lionel C. Kimerling, and Anu Agarwal. "Air-clad silicon pedestal structures for broadband mid-infrared microphotonics." Optics Letters 38, no. 7 (March 20, 2013): 1031. http://dx.doi.org/10.1364/ol.38.001031.

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Belyakov, V. A., V. A. Burdov, R. Lockwood, and A. Meldrum. "Silicon Nanocrystals: Fundamental Theory and Implications for Stimulated Emission." Advances in Optical Technologies 2008 (June 29, 2008): 1–32. http://dx.doi.org/10.1155/2008/279502.

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Silicon nanocrystals (NCs) represent one of the most promising material systems for light emission applications in microphotonics. In recent years, several groups have reported on the observation of optical gain or stimulated emission in silicon NCs or in porous silicon (PSi). These results suggest that silicon-NC-based waveguide amplifiers or silicon lasers are achievable. However, in order to obtain clear and reproducible evidence of stimulated emission, it is necessary to understand the physical mechanisms at work in the light emission process. In this paper, we report on the detailed theoretical aspects of the energy levels and recombination rates in doped and undoped Si NCs, and we discuss the effects of energy transfer mechanisms. The theoretical calculations are extended toward computational simulations of ensembles of interacting nanocrystals. We will show that inhomogeneous broadening and energy transfer remain significant problems that must be overcome in order to improve the gain profile and to minimize nonradiative effects. Finally, we suggest means by which these objectives may be achieved.

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Lin, Pao Tai, Vivek Singh, Hao-Yu Greg Lin, Tom Tiwald, Lionel C. Kimerling, and Anuradha Murthy Agarwal. "Low-Stress Silicon Nitride Platform for Mid-Infrared Broadband and Monolithically Integrated Microphotonics." Advanced Optical Materials 1, no. 10 (July 17, 2013): 732–39. http://dx.doi.org/10.1002/adom.201300205.

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Natrayan, L., P. V. Arul Kumar, S. Kaliappan, S. Sekar, Pravin P. Patil, R. Jayashri, and E. S. Esakki Raj. "Analysis of Incorporation of Ion-Bombarded Nickel Ions with Silicon Nanocrystals for Microphotonic Devices." Journal of Nanomaterials 2022 (August 16, 2022): 1–7. http://dx.doi.org/10.1155/2022/5438084.

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Nanotechnology is playing a greater role in biomedical engineering. Microphotonic technology is on another side, having faster growth with more requirements. The nanocrystals are a part of nanotechnology which uses silicon for manufacturing. These silicon nanocrystals have the optical property mostly used in microphotonic devices. Silicon nanocrystals are of biocompatibility with less toxicity. Therefore, the advancement in the silicon nanocrystal helps develop more microphotonic devices for biological purposes. One critical factor of silicon nanocrystal is the surface defects or surface imperfections. Surface passivation is the method employed for rectifying this disadvantage of silicon nanocrystal. Another major thing is that silicon nanocrystals are size dependent. So proper variation on the surface is required for yielding high performance of the nanocrystal. After characterizing the surface of the silicon nanocrystal, ion bombardment can occur. Nickel is a lustrous white chemical element which is less reactive when it is of a smaller size. So ion bombardment of nickel ion on the surface of the silicon nanocrystal can be done to improvise the performance of the microphotonic devices. Nearly there is an excess of 20 a.u. of photoluminescence intensity yielded. The relative fluorescence is also increased by 150 a.u. This research work enhanced the silicon nanocrystal using ion bombardment of nickel ion, which increased energy traps resulting in more intensities.

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Дисертації з теми "Silicon microphotonics"

Sandland, Jessica Gene 1977. "Sputtered silicon oxynitride for microphotonics : a materials study." Thesis, Massachusetts Institute of Technology, 2004. http://hdl.handle.net/1721.1/30250.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, February 2005.
Includes bibliographical references (leaves 121-134).
Silicon oxynitride (SiON) is an ideal waveguide material because the SiON materials system provides substantial flexibility in composition and refractive index. SiON can be varied in index from that of silicon dioxide (n=1.46) to that of silicon-rich silicon nitride (n-2.3). This flexibility in refractive index allows for the optimization of device performance by allowing trade-offs between the advantages of low-index contrast systems (low scattering losses and easy fiber-to-waveguide coupling) and the benefits of high-index-contrast systems (small waveguide size and tight bending radii). This work presents sputter processing as an alternative to traditional CVD processing. Two room-temperature SiON sputter processes are explored. The first process is a co- sputtered deposition from a silicon oxide and a silicon nitride target. The second is a reactive sputtering process from a silicon nitride target in an oxygen ambient. Silicon nitride sputtered from a silicon nitride target is also investigated. Models are provided that predict the index and composition in both the reactive and co- sputtered depositions. The cosputtered deposition is shown to follow a mixture model, while the reactive sputter deposition is shown to be either Si-flux limited or O-flux limited, depending on the partial pressure of oxygen in the reaction chamber and the power applied to the silicon nitride target. A materials study is provided that shows sputtered SiON to be a homogeneous material that gives good control of refractive index. Reactively sputtered SiON is shown to be Si-rich. These sputtered materials investigated for use in waveguides and in Er-doped waveguide amplifiers.
(cont.) Low loss waveguides are demonstrated for both co-sputtered and reactively sputtered depositions. Losses below 1 dB/cm are shown for co-sputtered deposition (n=1.65). Photoluminescence of Er-doped material shows lifetimes comparable to commercial EDFA material for both co-sputtered SiON and sputtered silicon dioxide.
by Jessica Gene Sandland.
Ph.D.

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Lee, Kevin Kidoo 1972. "Transmission and routing of optical signals in on-chip waveguides for silicon microphotonics." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/8768.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2001.
Includes bibliographical references (p. 139-142).
In this thesis, guiding and routing of optical signals in high index difference ([delta]m) waveguide systems are studied for silicon microphotonic applications. High [delta]n waveguide systems offer compact device sizes that enable highly dense integrated optics suitable for silicon microphotonics. Scattering loss due to the roughness at the core/cladding interfaces is identified as a major source of loss in a high M system. Using both experimental and theoretical approaches, the interdependence of scattering loss, waveguide dimension, and roughness is investigated. We developed a 3 dimensional model that successfully explains the scattering loss dependence on the waveguide dimension. Using this model, a loss contour map is constructed to better understand the scattering loss from interface roughness. This map provides an effective methodology to reduce roughness scattering, which we used to develop two fabrication technologies. Loss reduction from 32 dB/cm to 0.8 dB/cm is achieved for [delta]n =2.0. This is the lowest loss ever achieved for a single-mode, high An system. PolySi/Si02 waveguide systems are investigated due to the compatibility of multi-level processing. Our best PolySi/Si02 waveguide shows additional 10 dB/cm loss, coming mainly from the top surface roughness due to grain boundary grooving. compared to a Si/Si02 waveguide. Compact high An routing devices such as round bends, Y-splitters, and Multi-Mode Interference (MMI) splitters are fabricated and tested. We show that single-mode waveguide bends exhibit μm size bending with low loss and single-mode splitters show splitting with good uniformity. MMis show advantages over equivalent Y-splitter based structures in terms of size and loss. Our MMI design led to the fabrication of the smallest optical 1x16 fanout ever built. High Transmission Cavity (HTC) based bends, splitters, and resonators, that are compatible with an anisotropic etching technique, are demonstrated. An index engineering map, which shows competing trends of minimum bending radius and scattering loss as tin is changed. is constructed. From this map, the optimal M can be found for a given fabrication technology. Improvement in the fabrication technology allows for higher tin and provides a scaling law in optical devices. This point is proven by our 0.8 dB/cm Si/Si02 waveguides, which lifts the upper limit of the usable [delta]n.
by Kevin Kidoo Lee.
Ph.D.

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Scarangella, Adriana. "Efficient light emission from bismuth-doped rare earths compounds for Si microphotonics." Doctoral thesis, Università di Catania, 2016. http://hdl.handle.net/10761/4044.

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For almost 50 years, silicon microelectronics has been the engine of the modern information revolution, owing to the advent of the nanotechnology era that has produced always faster, cheaper, smaller and more performing devices inside the same silicon chip. However its fortune might be coming to an end. Indeed, as a consequence of the continuous reduction in size, much longer electrical interconnects are required, thus leading to an increase of signal delays and to electromagnetic interferences that cause power dissipation and limit the total performances of a chip. A possible solution to this problem can be obtained by replacing the electrical interconnections with the optical ones by the realization of a totally integrated photonic circuit on a silicon platform. For this reason, recently strong efforts have been devoted to the development of the main constituents of a photonic circuit, such as waveguides, splitters or multiplexers, detectors, etc. However there is still a lack of integrated infrared light sources that are required to generate logic value 1-0 and to compensate the optical losses in waveguides. In addition recently also the demand for efficient integrated visible light sources for LEDs, displays and lab-on-chip applications is increasing. Different strategies have been proposed to satisfy these requirements and will be reviewed in the following chapter, by evidencing their strengths and their limits. In order to further increase the efficiency of these light sources and to realize integrated photonic circuits, their coupling with passive devices, such as SOI or plasmonic waveguides and photonic crystals, has been recently proposed owing to the existence of several interesting effects. Two completely different approaches will be pursued in this thesis work: (i) the synthesis of silicon compatible REs compounds in which the REs amount can be varied in a continuous way increasing the efficiency of the light source without suffering from detrimental effects and (ii) the contemporary introduction of post-transition metals as either strong emitting elements in the visible range or as sensitizers for the infrared emission, thus suggesting these materials as good candidates for an integrated light source on silicon. In particular in Chapter 2, the needs of new light sources in the visible range will be faced. Bismuth is proposed as an emitter for Si-based transparent materials in place of the most common used REs, as Eu and Tb: this element indeed can improve much more the optical efficiency of the systems thanks to its peculiar electronic configuration and to its high absorption and emission cross sections. Its introduction in two different Si-compatible yttrium based hosts, the yttrium disilicate and the yttrium oxide, will be discussed. These matrices are indeed suitable for the introduction of dopant elements in the Y3+ substitutional position. In particular, the influence of different annealing atmospheres on the structural and optical properties will be presented for both the hosts, thus proposing them as efficient, Si compatible optical materials for applications on Si platforms as down-converters for the solar spectrum and as broad and tunable emitters in the visible range. In Chapter 3, the possibility to exploit also infrared emission by involving erbium-yttrium mixed compounds will be addressed. This approach permits to increase the Er content up to the constituent level without optically inactive clusters formation. The additional introduction of Bi as a sensitizer for Er will be proposed. Therefore by the optimization of the structural and optical properties, the coupling Bi-Er will be demonstrated in order to enhance Er optical emission at 1.54 micron up to 2000 times. This result makes Bi-Er-Y mixed compounds good candidates for light emission and amplification in the telecommunication windows, thus achieving an interesting goal for Si-microphotonics.

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Cardile, Paolo. "Emission and amplification of light from novel Si-based materials." Doctoral thesis, Università di Catania, 2012. http://hdl.handle.net/10761/934.

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In questo lavoro di tesi mi sono occupato della sintesi di materiali innovativi basati sul silicio per applicazioni in microfotonica, della loro caratterizzazione e della realizzazione di dispositivi. Questo lavoro ha portato alla fabbricazione di un LED al silicio molto efficiente, funzionante a temperatura ambiente e a lunghezze d'onda utili per le telecomunicazioni. Inoltre sono stati proposti dei materiali innovativi basati sulle terre rare, come candidati ideali per la realizzazione di amplificatori ottici planari.

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Lim, Desmond Rodney. "Device integration for silicon microphotonic platforms." Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/16784.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2000.
Also available online at the MIT Theses Online homepage
Includes bibliographical references (p. 199-211).
This electronic version was submitted by the student author. The certified thesis is available in the Institute Archives and Special Collections.
Silicon ULSI compatible, high index contrast waveguides and devices provide high density integration for optical networking and on-chip optical interconnects. Four such waveguide systems were fabricated and analyzed: crystalline silicon-on-insulator (SOI) strip, polycrystalline silicon (polySi) strip, silicon nitride strip and SPARROW waveguides. The loss of 15 dB/cm measured through an SOI waveguide was the smallest ever measured for a silicon strip waveguide and is due to improved side-wall roughness. The TM mode of a single mode polySi strip waveguide with a 1:2.5 aspect ratio exhibited, surprisingly, smaller loss than the TE mode. Further, analysis shows that high index contrast waveguides are more sensitive to polarization dependent loss in the presence of surface roughness. Single mode bends and splits in both silicon and silicon nitride were studied. 0.01 dB/turn loss has been measured for 2 micron radius silicon bends. Polarization dependent loss was also observed; the bending loss of a TM mode was, as expected, much larger than that of a TE mode. The splitting losses for two-degree Y-split was 0.15 dB/split. A 1x16 multi-mode interferometer splitter occupied an area of 480 sq-microns and exhibited loss of 3 dB. ULSI compatible waveguide structures integrated with micro-resonators have been studied. Qs of 10000 and efficiencies close to 100% were achieved in high index contrast ring resonators and Qs of 100 million were achieved in microsphere resonators. A thermal and mechanical tuning mechanism was demonstrated for micro-ring resonators.
(cont.) In addition, >95% coupling efficiency between SPARROW waveguides and microspheres was achieved, the first microspheres to be coupled to integrated optics waveguides. 1x4 wavelength division multiplexing devices have been, for the first time, demonstrated in high index contrast silicon and silicon nitride strip waveguide systems. These systems have a component density of 1-million devices/sq-cm. Higher order filters made from multiple rings exhibited flat top responses and the expected steeper roll-off resonance response. Integrated modulators and switches based on waveguides and rings were also studied. Finally, the integration of the components in systems applications was analyzed. A study of the effect of polarization and loss in silicon microphotonics waveguide systems is presented.
by Desmond Rodney Lim Chin Siong.
Ph.D.

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Dai, Daoxin. "Designs and simulations of silicon-based microphotonic devices." Doctoral thesis, Stockholm: Division of Electromagnetic Theory, Royal Institute of Technology, 2005. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-226.

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Gao, Weijie. "Effective-Medium-Clad Dielectric Components Towards Terahertz Integrated Platform." Thesis, 2021. https://hdl.handle.net/2440/135599.

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Over the past few decades, optics-based time-domain spectroscopic systems have significantly promoted the developments of terahertz science and technology. Despite their success in physics, the bulky and costly optical systems are not readily amendable to various applications such as communications, imaging, sensing, and radar. These applications require devices with structural compactness, integrability, and portability. Leveraging both electronic and photonic technologies, terahertz integrated circuits have emerged and gradually bridged the gap between ’concept’ and ’application’. To realise multifunctional terahertz integrated circuits, efficient and broadband platforms able to accommodate various passive and active components are in great demand, while interconnects with low loss, low dispersion, and broad bandwidth are vital. To this end, this thesis focuses on an efficient and broadband terahertz integrated platform based on silicon. Firstly, a class of self-supported substrateless dielectric waveguides are proposed based on the effective medium theory. The effective-mediumclad dielectric waveguides are purely built into a high-resistivity intrinsic float-zone silicon wafer to achieve extremely low loss and low dispersion. The effective medium is realised by periodically perforating the silicon slab with a deep subwavelength spacing, leading to a tailorable effective relative permittivity tensor. Consequently, an additional degree of freedom is granted in this design to manipulate the waveguides’ modal indices and adapt to different guiding scenarios. Through in-depth investigations of various propagation characteristics, the proposed waveguides show a potential to establish a terahertz integrated platform with a high level of design flexibility. Benefiting from the concept of effective medium to create this new waveguide platform, various fundamental building blocks and functional components are proposed including bends, crossings, directional couplers, filters, and polarisation splitters. All these components inherit high efficiency and broad bandwidth, which are much needed for terahertz applications that typically leverage a vast available bandwidth with limited source power. The proposed concepts can benefit terahertz integrated circuits at large, in analogy to the silicon-on-insulator platform for integrated photonics.
Thesis (Ph.D.) -- University of Adelaide,School of Electrical and Electronic Engineering, 2022

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Книги з теми "Silicon microphotonics"

Ossicini, Stefano, Lorenzo Pavesi, and Francesco Priolo. Light Emitting Silicon for Microphotonics. Berlin, Heidelberg: Springer Berlin Heidelberg, 2003. http://dx.doi.org/10.1007/b13588.

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International School of Physics "Enrico Fermi" (1998 Varenna, Italy). Silicon-based microphotonics: From basics to applications : Varenna on Lake Como, Villa Monastero, 21-31 July 1998. Amsterdam: IOS Press, 1999.

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Aalto, Timo. Microphotonic silicon waveguide components. [Espoo, Finland]: VTT, 2004.

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Solehmainen, Kimmo. Fabrication of microphotonic waveguide components on silicon. [Espoo, Finland]: VTT Technical Research Centre of Finland, 2007.

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Light Emitting Silicon for Microphotonics. Springer, 2004.

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INTERNATIONAL SCHOOL OF PHYSICS ENRICO and O. Bisi. Silicon-based Microphotonics (Proceedings of the International School of Physics). Ios Pr Inc, 2000.

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Light Emitting Silicon for Microphotonics Springer Tracts in Modern Physics Paperback. Springer, 2010.

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Частини книг з теми "Silicon microphotonics"

Kik, P. G., M. J. A. de Dood, and A. Polman. "Silicon Microphotonics." In Nonlinear Optics for the Information Society, 75. Dordrecht: Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-015-1267-1_13.

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Kimerling, L. C. "Silicon Microphotonics." In Interconnect Technology and Design for Gigascale Integration, 383–401. Boston, MA: Springer US, 2003. http://dx.doi.org/10.1007/978-1-4615-0461-0_10.

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Kimerling, L. C., L. Dal Negro, S. Saini, Y. Yi, D. Ahn, S. Akiyama, D. Cannon, et al. "Monolithic Silicon Microphotonics." In Topics in Applied Physics, 89–120. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-39913-1_3.

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Agarwal, Anuradha M., and Jurgen Michel. "Amorphous Silicon in Microphotonics." In Springer Handbook of Glass, 1483–93. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-93728-1_43.

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Kimerling, Lionel C. "Silicon Microphotonics: The Next Killer Technology." In Towards the First Silicon Laser, 465–76. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0149-6_40.

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Тези доповідей конференцій з теми "Silicon microphotonics"

Kimerling, Lionel C. "Silicon Microphotonics." In Integrated Photonics Research. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/ipr.2002.ifb1.

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Lau, K. Y., O. Solgaard, N. Tien, M. Daneman, M. Kiang, and R. S. Muller. "Silicon Micromachined Microphotonics." In 1996 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1996. http://dx.doi.org/10.7567/ssdm.1996.d-4-1.

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Kimerling, Lionel C. "Silicon Microphotonics: High Volume Manufacturing." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/iprsn.2015.it1a.3.

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Almeida, Vilson R., and Michal Lipson. "Optical bistability on silicon microphotonics." In Integrated Photonics Research. Washington, D.C.: OSA, 2004. http://dx.doi.org/10.1364/ipr.2004.iwa3.

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Serpenguzel, A. "Silicon microspheres for VLSI silicon CMOS microphotonics." In 2012 Opto-Electronics and Communications Conference (OECC). IEEE, 2012. http://dx.doi.org/10.1109/oecc.2012.6276672.

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Janz, S., P. Cheben, A. Delâge, B. Lamontagne, M. J. Picard, D. X. Xu, K. P. Yap, and W. N. Ye. "Enabling technologies for silicon-based microphotonics." In Integrated Photonics Research and Applications. Washington, D.C.: OSA, 2005. http://dx.doi.org/10.1364/ipra.2005.imb1.

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Lin, Pao Tai, Vivek Singh, Hao-Yu Greg Lin, Tom Tiwald, Dawn T. H. Tan, Lionel C. Kimerling, and Anuradha Murthy Agarwal. "Low-Stress Silicon Nitride for Mid-Infrared Microphotonics." In Integrated Photonics Research, Silicon and Nanophotonics. Washington, D.C.: OSA, 2014. http://dx.doi.org/10.1364/iprsn.2014.im4a.4.

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Kimerling, L. C. "Silicon Microphotonics: Hardware for the Information Age." In 2006 International SiGe Technology and Device Meeting. IEEE, 2006. http://dx.doi.org/10.1109/istdm.2006.246570.

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Nandgaonkar, A. B., S. B. Deosarka, and Pragnesh Shah. "Silicon Microphotonics : A New Technology for Next Generation." In 2007 International Conference on Electromagnetics in Advanced Applications. IEEE, 2007. http://dx.doi.org/10.1109/iceaa.2007.4387386.

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Borselli, Matthew, Thomas J. Johnson, and Oskar Painter. "Loss characterization and surface passivation in silicon microphotonics." In 2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference. IEEE, 2006. http://dx.doi.org/10.1109/cleo.2006.4627618.

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