Статті в журналах з теми "Silicon carbide Effect of high temperatures on"
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Sun, Wenyue, Zhiliang Huang, Changlian Chen, and Song Chen. "Preparation of Silicon Carbide Film by Composite Sintering of Silicon Nitride and Silicon Carbide." Journal of Physics: Conference Series 2390, no. 1 (December 1, 2022): 012001. http://dx.doi.org/10.1088/1742-6596/2390/1/012001.
Повний текст джерелаZvonarev, E. V., A. Ph Ilyushchanka, Zh A. Vitko, V. A. Osipov, and D. V. Babura. "Effect of reaction sintering modes on the structure and properties of carbide ceramics." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 63, no. 4 (January 12, 2019): 407–15. http://dx.doi.org/10.29235/1561-8358-2018-63-4-407-415.
Повний текст джерелаDang, Dinh Lam, Matthieu Urbain, and Stephane Rael. "Temperature Dependency of Silicon Carbide MOSFET On-Resistance Characterization and Modeling." Materials Science Forum 963 (July 2019): 592–95. http://dx.doi.org/10.4028/www.scientific.net/msf.963.592.
Повний текст джерелаMousa, Habeeb, and Kasif Teker. "High-transconductance silicon carbide nanowire-based field-effect transistor (SiC-NWFET) for high-temperature applications." Microelectronics International 38, no. 2 (August 4, 2021): 78–83. http://dx.doi.org/10.1108/mi-05-2021-0043.
Повний текст джерелаChailloux, Thibaut, Cyril Calvez, Dominique Tournier, and Dominique Planson. "Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature." Materials Science Forum 821-823 (June 2015): 814–17. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.814.
Повний текст джерелаWeng, M. H., A. D. Murphy, D. T. Clark, D. A. Smith, R. F. Thompson, R. A. R. Young, E. P. Ramsay, H. K. Chan, and A. B. Horsfall. "Gate Stack Engineering for High Temperature Silicon Carbide CMOS ICs." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000033–36. http://dx.doi.org/10.4071/hiten-session1-paper1_6.
Повний текст джерелаSuyama, Shoko, and Yoshiyasu Itoh. "High-Strength Reaction-Sintered Silicon Carbide for Large-Scale Mirrors - Effect of Surface Oxide Layer on Bending Strength." Advances in Science and Technology 63 (October 2010): 374–82. http://dx.doi.org/10.4028/www.scientific.net/ast.63.374.
Повний текст джерелаLee, Te-Hao, Swarup Bhunia, and Mehran Mehregany. "Electromechanical Computing at 500°C with Silicon Carbide." Science 329, no. 5997 (September 9, 2010): 1316–18. http://dx.doi.org/10.1126/science.1192511.
Повний текст джерелаZhao, Jian H. "Silicon Carbide Power Field-Effect Transistors." MRS Bulletin 30, no. 4 (April 2005): 293–98. http://dx.doi.org/10.1557/mrs2005.76.
Повний текст джерелаOuaida, Rémy, Cyril Buttay, Anhdung Hoang, Raphaël Riva, Dominique Bergogne, Hervé Morel, Christophe Raynaud, and Florent Morel. "Thermal Runaway Robustness of SiC VJFETs." Materials Science Forum 740-742 (January 2013): 929–33. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.929.
Повний текст джерелаJaworski, J., R. Kluz, and T. Trzepieciński. "Influence of Heat Treatment on Content of the Carbide Phases in the Microstructure of High-Speed Steel." Archives of Foundry Engineering 17, no. 3 (September 1, 2017): 59–62. http://dx.doi.org/10.1515/afe-2017-0091.
Повний текст джерелаMesquita, Rafael Agnelli, Celso Antonio Barbosa, E. Valencia Morales, and H. J. Kestenbach. "Secondary Carbide Precipitation in Low Silicon Hot Work Tool Steels." Materials Science Forum 636-637 (January 2010): 612–17. http://dx.doi.org/10.4028/www.scientific.net/msf.636-637.612.
Повний текст джерелаHamilton, Dean, Liam Mills, Steve Riches, and Philip Mawby. "Performance and Reliability of SiC dies, Die attach and Substrates for High Temperature Power Applications up to 300°C." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2015, HiTEN (January 1, 2015): 000200–000207. http://dx.doi.org/10.4071/hiten-session6-paper6_2.
Повний текст джерелаBhatnagar, Praneet, Nicolas G. Wright, Alton B. Horsfall, C. Mark Johnson, Michael J. Uren, Keith P. Hilton, A. G. Munday, and A. J. Hydes. "High Temperature Applications Of 4H-SiC Vertical Junction Field-Effect Transistors And Schottky Diodes." Materials Science Forum 556-557 (September 2007): 987–90. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.987.
Повний текст джерелаLi, Xin Wei, Dian Li Qu, Zhi Jian Li, Feng Wu, and Na Xu. "Effect of Three Catalysts on Synthesis of Silicon Carbide Whiskers with Silica Fume." Advanced Materials Research 284-286 (July 2011): 496–99. http://dx.doi.org/10.4028/www.scientific.net/amr.284-286.496.
Повний текст джерелаSenyut, V. T. "Sintering of composite materials for tool appointment, based on impact diamonds, under high pressure and temperatures." Proceedings of the National Academy of Sciences of Belarus, Physical-Technical Series 66, no. 1 (April 2, 2021): 47–57. http://dx.doi.org/10.29235/1561-8358-2021-66-1-47-57.
Повний текст джерелаRuddy, Frank H., Laurent Ottaviani, Abdallah Lyoussi, Christophe Destouches, Olivier Palais, and Christelle Reynard-Carette. "Performance and Applications of Silicon Carbide Neutron Detectors in Harsh Nuclear Environments." EPJ Web of Conferences 253 (2021): 11003. http://dx.doi.org/10.1051/epjconf/202125311003.
Повний текст джерелаHuang, Jing-Jia, Christian Militzer, Charles Wijayawardhana, Urban Forsberg, and Henrik Pedersen. "Conformal and superconformal chemical vapor deposition of silicon carbide coatings." Journal of Vacuum Science & Technology A 40, no. 5 (September 2022): 053402. http://dx.doi.org/10.1116/6.0001909.
Повний текст джерелаFan, Bing Bing, Huan Huan Guo, Jian Li, Hai Long Wang, Ke Bao, and Rui Zhang. "The Effect of SiC Surface Treatment on the Interface Bonding Behavior of SiC/Cu Composite Particles." Key Engineering Materials 512-515 (June 2012): 951–54. http://dx.doi.org/10.4028/www.scientific.net/kem.512-515.951.
Повний текст джерелаFrancis, A. Matthew, Jim Holmes, Nick Chiolino, Matthew Barlow, Affan Abbasi, and H. Alan Mantooth. "High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (January 1, 2016): 000242–48. http://dx.doi.org/10.4071/2016-hitec-242.
Повний текст джерелаNguyen, Tuan-Khoa, Hoang-Phuong Phan, Toan Dinh, Abu Riduan Md Foisal, Nam-Trung Nguyen, and Dzung Viet Dao. "High-temperature tolerance of the piezoresistive effect in p-4H-SiC for harsh environment sensing." Journal of Materials Chemistry C 6, no. 32 (2018): 8613–17. http://dx.doi.org/10.1039/c8tc03094d.
Повний текст джерелаWei, Jun Hu, Xu Ran, and Han Ying. "Effect of Tempering Temperature on Microstructure and Properties of Low Carbon High Silicon Alloy Steel Treated by Q-P-T Process." Materials Science Forum 993 (May 2020): 592–96. http://dx.doi.org/10.4028/www.scientific.net/msf.993.592.
Повний текст джерелаКозловский, В. В., O. Корольков, К. С. Давыдовская, A. А. Лебедев, М. Е. Левинштейн, Н. Слепчук, А. М. Стрельчук та J. Toompuu. "Влияние температуры протонного облучения на характеристики мощных высоковольтных карбид-кремниевых диодов Шоттки". Письма в журнал технической физики 46, № 6 (2020): 35. http://dx.doi.org/10.21883/pjtf.2020.06.49163.18072.
Повний текст джерелаMurathan, Ömer Faruk, Kemal Davut, and Volkan Kilicli. "Effect of austenitizing temperatures on the microstructure and mechanical properties of AISI 9254 steel." Materials Testing 63, no. 1 (January 1, 2021): 48–54. http://dx.doi.org/10.1515/mt-2020-0007.
Повний текст джерелаYao, Longhui, Liang Wang, Xiaojiao Song, Ran Cui, Binqiang Li, Qi Lv, Liangshun Luo, Yanqing Su, Jingjie Guo, and Hengzhi Fu. "Microstructure Evolution and Toughening Mechanism of a Nb-18Si-5HfC Eutectic Alloy Created by Selective Laser Melting." Materials 15, no. 3 (February 4, 2022): 1190. http://dx.doi.org/10.3390/ma15031190.
Повний текст джерелаSamal, Birajendu Prasad, Manas Kumar Samantaray, Om Prakash Samal, and Subarna Keshari Singh. "Dry Sliding Wear Analysis of Composite Prepared by A Novel Method with Different Furnace Temperature." International Journal for Research in Applied Science and Engineering Technology 10, no. 8 (August 31, 2022): 1100–1103. http://dx.doi.org/10.22214/ijraset.2022.46358.
Повний текст джерелаHolmes, Jim, A. Matthew Francis, Ian Getreu, Matthew Barlow, Affan Abbasi, and H. Alan Mantooth. "Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application." Journal of Microelectronics and Electronic Packaging 13, no. 4 (October 1, 2016): 143–54. http://dx.doi.org/10.4071/imaps.527.
Повний текст джерелаCheng, Peng, Guan Jun Qiao, Di Chen Li, Ji Qiang Gao, Hong Jie Wang, and Zhi Hao Jin. "RB-SiC Ceramics Derived from the Phenol Resin Added with Starch." Key Engineering Materials 336-338 (April 2007): 1144–47. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.1144.
Повний текст джерелаLi, Han, Hong Zhao Xu, Chang Ling Zhou, and Yan Yan Wang. "Study on the Gel Casting Process of Silicon Carbide." Key Engineering Materials 697 (July 2016): 138–42. http://dx.doi.org/10.4028/www.scientific.net/kem.697.138.
Повний текст джерелаSaboktakin Rizi, Mohsen, Gholam Reza Razavi, Mojtaba Ostadmohamadi, and Ali Reza Havaie. "Optimization Electro Discharge Machining of Ti-6Al-4V Alloy with Silicon Carbide Powder Mixed." Advanced Materials Research 566 (September 2012): 466–69. http://dx.doi.org/10.4028/www.scientific.net/amr.566.466.
Повний текст джерелаSeya, Kyosuke, Shunkichi Ueno, and Byung-Koog Jang. "Formation ofAl2O3-HfO2Eutectic EBC Film on Silicon Carbide Substrate." Journal of Nanomaterials 2015 (2015): 1–7. http://dx.doi.org/10.1155/2015/318278.
Повний текст джерелаDhar, Sarit, Shurui Wang, John R. Williams, Sokrates T. Pantelides, and Leonard C. Feldman. "Interface Passivation for Silicon Dioxide Layers on Silicon Carbide." MRS Bulletin 30, no. 4 (April 2005): 288–92. http://dx.doi.org/10.1557/mrs2005.75.
Повний текст джерелаMedina, Elisabetta, Enrico Sangregorio, Andreo Crnjac, Francesco Romano, Giuliana Milluzzo, Anna Vignati, Milko Jakšic, Lucia Calcagno, and Massimo Camarda. "Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations." Micromachines 14, no. 1 (January 9, 2023): 166. http://dx.doi.org/10.3390/mi14010166.
Повний текст джерелаLiu, Rongzhen, Gong Chen, Yudi Qiu, Peng Chen, Yusheng Shi, Chunze Yan, and Hongbin Tan. "Fabrication of Porous SiC by Direct Selective Laser Sintering Effect of Boron Carbide." Metals 11, no. 5 (April 29, 2021): 737. http://dx.doi.org/10.3390/met11050737.
Повний текст джерелаNakao, Wataru. "Second Step Approach for Self Healing Ceramics." Materials Science Forum 638-642 (January 2010): 2133–37. http://dx.doi.org/10.4028/www.scientific.net/msf.638-642.2133.
Повний текст джерелаTan, Zhun Li, Bing Zhe Bai, Hong Sheng Fang, and Fu Bao Yang. "The Effect of Si on the Toughness of High Strength Mn-Si-Cr Series Bainitic Steels." Materials Science Forum 475-479 (January 2005): 213–16. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.213.
Повний текст джерелаKim, Young Wook, Sung Hee Lee, Toshiyuki Nishimura, Mamoru Mitomo, Je Hun Lee, and Doh Yeon Kim. "Fabrication of Heat-Resistant Silicon Carbide Ceramics by Controlling Intergranular Phase." Key Engineering Materials 287 (June 2005): 299–310. http://dx.doi.org/10.4028/www.scientific.net/kem.287.299.
Повний текст джерелаMurathan, Ömer Faruk, and Volkan Kilicli. "Effect of isothermal heat treatments under Ms temperature on the microstructures and mechanical properties of commercial high-silicon spring steel." Materials Testing 64, no. 8 (August 1, 2022): 1112–21. http://dx.doi.org/10.1515/mt-2022-0002.
Повний текст джерелаSuyama, Shoko, and Yoshiyasu Itoh. "Strengthening Mechanism of High-Strength Reaction-Sintered Silicon Carbide." Key Engineering Materials 484 (July 2011): 89–97. http://dx.doi.org/10.4028/www.scientific.net/kem.484.89.
Повний текст джерелаButtay, Cyril, Remi Robutel, Christian Martin, Christophe Raynaud, Simeon Dampieni, Dominique Bergogne, and Thibaut Chailloux. "Effect of High Temperature Ageing on Active and Passive Power Devices." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000228–35. http://dx.doi.org/10.4071/hitec-rrobutel-wa24.
Повний текст джерелаDin, Salah-ud, and M. Suleman. "Effect of high-temperature annealing on the microhardness of silicon carbide crystals." Materials Letters 5, no. 11-12 (October 1987): 484–88. http://dx.doi.org/10.1016/0167-577x(87)90070-x.
Повний текст джерелаCheng, Xiaole, Dong Zhang, Xiaojun Wu, Guangshen Xu, and Hanguang Fu. "Effect of quenching temperature on microstructure and properties of low silicon hypereutectic high chromium cast iron." Metallurgical Research & Technology 120, no. 1 (December 9, 2022): 102. http://dx.doi.org/10.1051/metal/2022105.
Повний текст джерелаYang, Jie, Rui Xiang Liu, Xue Ye Sui, Chang Ling Zhou, Chong Hai Wang, and Wen Yuan Zhang. "Effect of Binders on Preparation of High Temperature Rigid Thermal Insulation Materials." Key Engineering Materials 697 (July 2016): 453–56. http://dx.doi.org/10.4028/www.scientific.net/kem.697.453.
Повний текст джерелаStrojny-Nędza, A., K. Pietrzak, M. Teodorczyk, M. Basista, W. Węglewski, and M. Chmielewski. "Influence of Material Coating on the Heat Transfer in a Layered Cu-SiC-Cu Systems." Archives of Metallurgy and Materials 62, no. 2 (June 1, 2017): 1311–14. http://dx.doi.org/10.1515/amm-2017-0199.
Повний текст джерелаFlicker, Jack, David Hughart, Robert Kaplar, Stanley Atcitty, and Matthew Marinella. "Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs and JFETs at High Temperatures." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (January 1, 2014): 000228–34. http://dx.doi.org/10.4071/hitec-wp16.
Повний текст джерелаGreenwell, R. L., B. M. McCue, M. I. Laurence, C. L. Fandrich, B. J. Blalock, L. M. Tolbert, and S. K. Islam. "SOI-Based Integrated Gate Driver Circuit for High-Temperature Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, HITEC (January 1, 2012): 000233–44. http://dx.doi.org/10.4071/hitec-2012-wp16.
Повний текст джерелаFranceschi, Mattia, Luca Pezzato, Alessio Giorgio Settimi, Claudio Gennari, Mirko Pigato, Marina Polyakova, Dmitry Konstantinov, Katya Brunelli, and Manuele Dabalà. "Effect of Different Austempering Heat Treatments on Corrosion Properties of High Silicon Steel." Materials 14, no. 2 (January 8, 2021): 288. http://dx.doi.org/10.3390/ma14020288.
Повний текст джерелаFranceschi, Mattia, Luca Pezzato, Alessio Giorgio Settimi, Claudio Gennari, Mirko Pigato, Marina Polyakova, Dmitry Konstantinov, Katya Brunelli, and Manuele Dabalà. "Effect of Different Austempering Heat Treatments on Corrosion Properties of High Silicon Steel." Materials 14, no. 2 (January 8, 2021): 288. http://dx.doi.org/10.3390/ma14020288.
Повний текст джерелаFarina, Alexandre Bellegard, Rafael Agneli Mesquita, Hélio Goldenstein, and Hans Jürgen Kestenbach. "Thermodynamic Modelling of Carbide Precipitation in Hot Work Tool Steels with Different Silicon Contents." Solid State Phenomena 172-174 (June 2011): 1171–76. http://dx.doi.org/10.4028/www.scientific.net/ssp.172-174.1171.
Повний текст джерелаZhang, Xiao Feng, and Lutgard C. De Jonghe. "Thermal Modification of Microstructures and Grain Boundaries in Silicon Carbide." Journal of Materials Research 18, no. 12 (December 2003): 2807–13. http://dx.doi.org/10.1557/jmr.2003.0391.
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