Дисертації з теми "Silicon carbide Effect of high temperatures on"
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Wingbrant, Helena. "Development of high temperature SiC based field effect sensors for internal combustion engine exhaust gas monitoring." Licentiate thesis, Linköping University, Linköping University, Applied Physics, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-4673.
Повний текст джерелаWhile the car fleet becomes increasingly larger it is important to lower the amounts of pollutants from each individual diesel or gasoline engine to almost zero levels. The pollutants from these engines predominantly originate from high NOx emissions and particulates, in the case when diesel is utilized, and emissions at cold start from gasoline engines. One way of treating the high NOx levels is to introduce ammonia in the diesel exhausts and let it react with the NOx to form nitrogen gas and water, which is called SCR (Selective Catalytic Reduction). However, in order to make this system reduce NOx efficiently enough for meeting future legislations, closed loop control is required. To realize this type of system an NOx or ammonia sensor is needed. The cold start emissions from gasoline vehicles are primarily due to a high light-off time for the catalytic converter. Another reason is the inability to quickly heat the sensor used for controlling the air-to-fuel ratio in the exhausts, also called the lambda value, which is required to be in a particular range for the catalytic converter to work properly. This problem may be solved utilizing another, more robust sensor for this purpose.
This thesis presents the efforts made to test the SiC-based field effect transistor (SiC-FET) sensor technology both as an ammonia sensor for SCR systems and as a cold start lambda sensor. The SiC-FET sensor has been shown to be highly sensitive to ammonia both in laboratory and engine measurements. As a lambda sensor it has proven to be both sensitive and selective, and its properties have been studied in lambda stairs both in engine exhausts and in the laboratory. The influence of metal gate restructuring on the linearity of the sensor has also been investigated. The speed of response for both sensor types has been found to be fast enough for closed loop control in each application.
On the day of the public defence of the doctoral thesis, the status of article III was: in press. Report code: LiU-Tek-Lic-2003:50.
McNaughton, Adam L. "High Temperature Compression Testing of Monolithic Silicon Carbide (SiC)." Fogler Library, University of Maine, 2007. http://www.library.umaine.edu/theses/pdf/McNaughtonAL2007.pdf.
Повний текст джерелаMihăilă, Andrei-Petru. "Silicon carbide high power field effect transistor switches." Thesis, University of Cambridge, 2005. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.614951.
Повний текст джерелаButtram, Jonathan D. "Characterization of high temperature creep in siliconized silicon carbide using ultrasonic techniques." Thesis, This resource online, 1990. http://scholar.lib.vt.edu/theses/available/etd-03122009-040453/.
Повний текст джерелаFalahi, Khalil El. "Contribution à la conception de driver en technologie CMOS SOI pour la commande de transistors JFET SiC pour un environnement de haute température." Thesis, Lyon, INSA, 2012. http://www.theses.fr/2012ISAL0056/document.
Повний текст джерелаIn aeronautics, electrical systems progressively replace mechanical and hydraulic control systems. If the electronics can stand the absence of cooling, the immediate advantages will be the reduction of mass, increased performances, admissible reliability and thus reduction of costs. In aircraft, some important steps have already been performed successfully when substituting standard systems by electrical control system such as electrical brakes, thrust reverser, electrical actuators for flight control… Large band gap semiconductors (SiC, GaN…) have eased the operation in high temperature over the last decade and let overcome a weakness of conventional silicon systems (Si). High temperature power components such as Schottky diodes or JFET transistors, are already commercially available for a use up to 220°C, limited by package. Moreover inverters based on SiC JFET transistors have been realized and characterized at high temperature. Finally the control part of these power systems needs to be designed for harsh environment. It is in this context of lack of integrated control part that the FNRAE COTECH project and my doctoral research have been built. Based on a state of the art about drivers, the complex link between electronic and temperature and the potentialities of CMOS Silicon-On-Insulator technology (SOI) for high temperature applications have been underlined. The characterization of commercial SOI drivers gives essential data on these systems and their behavior at high temperature. These measurements also highlight the practical limitations of SOI technologies. The main part of this manuscript concerns the design and characterization of functions or IPs for high temperature JFET SiC driver. Two SOI runs in TFSmart1 have been realized. The developed functions include the driver output stage, associated buffers and protection functions. The drivers have been tested from -50°C up to 250°C without failure under short time-range. Moreover, an original protection function has been demonstrated against the short-circuit of an inverter leg. This function allows overcoming the main limitation of the normally on JFET transistor. Finally, an inverter module has been built for in-situ test of these new drivers
Mogniotte, Jean-François. "Conception d'un circuit intégré en SiC appliqué aux convertisseur de moyenne puissance." Thesis, Lyon, INSA, 2014. http://www.theses.fr/2014ISAL0004/document.
Повний текст джерелаThe new SiC power switches is able to consider power converters, which could operate in harsh environments as in High Voltage (> 10kV) and High Temperature (> 300 °C). Currently, they are no specific solutions for controlling these devices in harsh environments. The development of elementary functions in SiC is a preliminary step toward the realization of a first demonstrator for these fields of applications. AMPERE laboratory (France) and the National Center of Microelectronic of Barcelona (Spain) have elaborated an elementary electrical compound, which is a lateral dual gate MESFET in Silicon Carbide (SiC). The purpose of this research is to conceive a monolithic power converter and its driver in SiC. The scientific approach has consisted of defining in a first time a SPICE model of the elementary MESFET from electric characterizations (fitting). Analog functions as : comparator, ring oscillator, Schmitt’s trigger . . . have been designed thanks to this SPICE’s model. A device based on a bridge rectifier, a regulated "boost" and its driver has been established and simulated with the SPICE Simulator. The converter has been sized for supplying 2.2 W for an area of 0.27 cm2. This device has been fabricated at CNM of Barcelona on semi-insulating SiC substrate. The electrical characterizations of the lateral compounds (resistors, diodes, MESFETs) checked the design, the "sizing" and the manufacturing process of these elementary devices and analog functions. The experimental results is able to considerer a monolithic driver in Wide Band Gap. The prospects of this research is now to realize a fully integrated power converter in SiC and study its behavior in harsh environments (especially in high temperature > 300 °C). Analysis of degradation mechanisms and reliability of the power converters would be so considerer in the future
Hu, Yike. "Production and properties of epitaxial graphene on the carbon terminated face of hexagonal silicon carbide." Diss., Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/48705.
Повний текст джерелаJeon, Seung Woo. "Ultra-high-Q SiC photonic nanocavities." 京都大学 (Kyoto University), 2016. http://hdl.handle.net/2433/215549.
Повний текст джерелаHamieh, Youness. "Caractérisation et modélisation du transistor JFET en SiC à haute température." Phd thesis, INSA de Lyon, 2011. http://tel.archives-ouvertes.fr/tel-00665817.
Повний текст джерелаWilcox, Edward. "Silicon-germanium devices and circuits for cryogenic and high-radiation space environments." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/33850.
Повний текст джерелаPeftitsis, Dimosthenis. "On Gate Drivers and Applications of Normally-ON SiC JFETs." Doctoral thesis, KTH, Elektrisk energiomvandling, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-122679.
Повний текст джерелаI denna avhandling behandlas olika aspekter av normally–ON junction–field–effect–transistorer (JFETar) baserade på kiselkarbid (SiC). Effekthalvledarkomponenteri SiC kan arbeta vid högre switchfrekvens, högre verkningsgradoch högre temperatur än motsvarigheterna i kisel. Ur ett systemperspektivkan de tre nämnda fördelarna användas i omvandlarkonstruktionen för attuppnå antingen hög verkningsgrad, hög switchfrekvens eller hög temperaturtålighet.Såväl halvledarstrukturen som de makroskopiska egenskaperna för kommersiellttillgängliga SiC–transistorer presenteras. Bortsett från de vanligakonstruktions–och prestandaproblemen lider de olika komponenterna av ettantal tillkortakommanden som måste övervinnas för att bana väg för massproduktion.Även framtida SiC–komponenter diskuteras.Ur ett systemperspektiv är normally-ON JFETen en av de mest utmanandeSiC-komponenterna. De två varianter av denna komponent som varittillgängliga de senaste åren har båda avhandlats.State–of–the–art–drivdonet för normally-ON JFETar som presenteradesför några år sedan beskrivs i korthet. Med detta drivdon undersöks switchegenskapernaför båda JFET-typerna experimentellt.Vid beaktande av det aktuella utvecklingsstadiet av de tillgängliga normally–ON JFETarna i SiC, är det möjligt att uppnå höga märkströmmar endastom ett antal single–chip–komponenter parallellkopplas eller om multichipmodulerbyggs. Fyra komponentparametrar samt strö-induktanser för kretsenkan förutses påverka parallellkopplingen. De statiska och dynamiska egenskapernaför olika kombinationer av parallellkopplade normally-ON JFETarundersöks experimentellt med två olika gate–drivdonskonfigurationer.Ett självdrivande gate-drivdon för normally-ON JFETar presenteras också.Drivdonet är en kretslösning till “normally–ON–problemet”. Detta gatedrivdonkan både stänga av kortslutningsströmmen vid uppstart och tillhandahållaströmförsörjning vid normal drift. Med hjälp av en halvbrygga medkiselkarbidbaserade normally–ON JFETar har det visats att kortslutningsströmmenkan stängas av inom cirka 20 μs.Sist, men inte minst, presenteras de potentiella fördelarna med användningenav SiC-baserade normally-ON JFETar i framtida effektelektroniskatillämpningar. Speciellt visas att verkningsgrader av 99.8% respektive 99.5%kan uppnås i fallet av en 350 MW modular multilevel converter och i en40 kVA tvånivåväxelriktare. Sista kaplitet beskriver slutsatser och föreslagetframtida arbete.
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Sabbah, Wissam. "Contribution à l’étude des assemblages et connexions nécessaires à la réalisation d’un module de puissance haute température à base de jfet en carbure de silicium (SiC)." Thesis, Bordeaux 1, 2013. http://www.theses.fr/2013BOR12013/document.
Повний текст джерелаThe development of power components based on silicon carbide (SiC) allows for the design of power converter operating at high temperature (above 200 or 300°C). SiC is a semiconductor material with a large band gap that not only can operate in temperatures exceeding 300°C but also offers fast switching speed, high voltage blocking capability and higher thermal conductivity compared to silicon technology components. The classical die attach technology uses high temperature solder alloys which melt at around 300°C. However, even a soldered die attach with such high melting point can only operate up to a much lower temperature. Alternative die attach solutions have recently been proposed: Transient Liquid Phase Bonding, soldering with higher melting point alloys such as ZnSn, or silver sintering.Silver sintering is a very interesting technology, as silver offers very good thermal conductivity (429W/m.K, better than copper), relatively inexpensive (compared to alternative solutions which often use gold), and has a very high melting point (961°C).The implementation of two silver-sintering processes is made: one based on micrometer-scale silver particles, and one on nano-meter-scale particles. Two substrate technologies are investigated: Al2O3 DBC and Si3N4 AMB. After the process optimization, tests vehicles are assembled using nano and micro silver particles paste and a more classical high-temperature die attach technology: AuGe soldering. Multiple analyses are performed, such as thermal resistance measurement, shear tests and micro-sections to follow the evolution of the joint during thermal cycling and high-temperature storage ageing
Saini, Dalvir K. "Gallium Nitride: Analysis of Physical Properties and Performance in High-Frequency Power Electronic Circuits." Wright State University / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=wright1438013888.
Повний текст джерелаLaurent, Véronique. "Mouillabilité et réactivité dans les systèmes composites métal/céramique : étude du couple Al/SiC." Grenoble INPG, 1988. http://www.theses.fr/1988INPG0115.
Повний текст джерелаLe, Foll Sébastien. "Modélisation du couplage conduction/rayonnement dans les systèmes de protection thermique soumis à de très hauts niveaux de températures." Thesis, Lyon, INSA, 2014. http://www.theses.fr/2014ISAL0079/document.
Повний текст джерелаThe work presented in this thesis has been financed by AIRBUS Defence and Space. It is part of the development strategy of new Thermal Protection Systems (TPS) for atmospheric reentry purposes. The aim is to study the radiative transfer in the ablation zone of the TPS as well as the coupling of the radiative and conductive heat transfer in the low density fibrous matrix. To this end, radiative properties of the materials have to be evaluated since they are not well known. The first step of this study is therefore to characterize the optical and radiative properties of sample provided by AIRBUS Defence and Space and the CREE Stain-Gobain laboratory. Thus, an original identification method based on radiative emission measurement was developed to obtain the radiative properties. The needed emission spectra are measured on silica or carbon samples at high temperature with an experimental setup based on Fourrier Transformed InfraRed spectrometry. The samples are heated using a CO2 laser. An optical setup allows us to measure emission spectra on the sample or a black body used to calibrate the experiment. The identification process is based on the modeling of the radiative distribution factor computed by a Monte Carlo ray-tracing method. It uses Mie theory for infinite cylinder to compute the radiative properties. Temperature are also identified and, for silica, compared to the one measured by a Christiansen pyrometry technique. The last part of this study focuses on the coupled radiative/conductive heat transfer modeling in low density fibrous media. Samples being greatly absorbing, we used the Rosseland equivalent conductivity to model the radiative transfer in volume and obtain the thermal response of the samples in the conditions of the experimental setup used for the identification. For silica, predicted temperatures are superior to the identified ones or those measured with the Christiansen pyrometry technique. This is probably because the Rosseland equivalent conductivity makes no difference between extinction due to absorption and extinction due to scattering