Статті в журналах з теми "Silicide concentration"
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Pretorius, R., and J. W. Mayer. "Silicide formation by concentration controlled phase selection." Journal of Applied Physics 81, no. 5 (March 1997): 2448–50. http://dx.doi.org/10.1063/1.364252.
Повний текст джерелаDe Avillez, R. R., L. A. Clevenger, C. V. Thompson, and K. N. Tu. "Quantitative investigation of titanium/amorphous-silicon multilayer thin film reactions." Journal of Materials Research 5, no. 3 (March 1990): 593–600. http://dx.doi.org/10.1557/jmr.1990.0593.
Повний текст джерелаHOU, Q. R., Z. M. WANG, and Y. J. HE. "THE EFFECT OF OXYGEN ON THE FORMATION OF MANGANESE SILICIDE." Modern Physics Letters B 16, no. 28n29 (December 20, 2002): 1135–42. http://dx.doi.org/10.1142/s0217984902004664.
Повний текст джерелаNakamura, Kozo, and Junsuke Tomioka. "Effect of Oxygen Precipitates on the Surface-Precipitation of Nickel on Cz-Silicon Wafers." Solid State Phenomena 108-109 (December 2005): 103–8. http://dx.doi.org/10.4028/www.scientific.net/ssp.108-109.103.
Повний текст джерелаVantomme, A., S. Degroote, J. Dekoster, G. Langouche, and R. Pretorius. "Concentration-controlled phase selection of silicide formation during reactive deposition." Applied Physics Letters 74, no. 21 (May 24, 1999): 3137–39. http://dx.doi.org/10.1063/1.124090.
Повний текст джерелаShenai, Krishna. "Thermal stability of TiSi2 films on single crystal and polycrystalline silicon." Journal of Materials Research 6, no. 7 (July 1991): 1502–11. http://dx.doi.org/10.1557/jmr.1991.1502.
Повний текст джерелаCelano, Umberto, Lennaert Wouters, Alexis Franquet, Valentina Spampinato, Paul van der Heide, Marc Schaekers, Abhijeet Joshi, and Bulent M. Basol. "Dopant Activation Depth Profiling for Highly Doped Si:P By Scanning Spreading Resistance Microscopy (SSRM) and Differential Hall Effect Metrology (DHEM)." ECS Transactions 108, no. 5 (May 20, 2022): 9–15. http://dx.doi.org/10.1149/10805.0009ecst.
Повний текст джерелаLiu, Wei-Di, Xiao-Lei Shi, Raza Moshwan, Qiang Sun, Lei Yang, Zhi-Gang Chen, and Jin Zou. "Effectively restricting MnSi precipitates for simultaneously enhancing the Seebeck coefficient and electrical conductivity in higher manganese silicide." Journal of Materials Chemistry C 7, no. 24 (2019): 7212–18. http://dx.doi.org/10.1039/c9tc01937e.
Повний текст джерелаTopuria, T., N. D. Browning, and Z. Ma. "Characterization of the Source/Drain Region in Mos Devices by Scanning Transmission Electron Microscopy." Microscopy and Microanalysis 7, S2 (August 2001): 210–11. http://dx.doi.org/10.1017/s1431927600027124.
Повний текст джерелаСуворова, Е. И., Ф. Ю. Соломкин, Н. А. Архарова, Н. В. Шаренкова та Г. Н. Исаченко. "Микроструктура и фазовый состав сплава дисилицидов железа и хрома". Физика и техника полупроводников 56, № 2 (2022): 187. http://dx.doi.org/10.21883/ftp.2022.02.51960.33.
Повний текст джерелаLarionov, A. V., K. V. Pikulin, S. V. Zhidovinova, and L. Yu Udoeva. "Yttrium effect on the structural-phase state in situ of Mo – 15.3 V – 10.5 Si composite." Perspektivnye Materialy, no. 7 (2020): 19–28. http://dx.doi.org/10.30791/1028-978x-2020-7-19-28.
Повний текст джерелаHofstetter, Jasmin, David P. Fenning, Douglas M. Powell, Ashley E. Morishige, and Tonio Buonassisi. "Iron Management in Multicrystalline Silicon through Predictive Simulation: Point Defects, Precipitates, and Structural Defect Interactions." Solid State Phenomena 205-206 (October 2013): 15–25. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.15.
Повний текст джерелаNelson, Jack, Mohammad Ghadyani, Claire Utton, and Panos Tsakiropoulos. "A Study of the Effects of Al, Cr, Hf, and Ti Additions on the Microstructure and Oxidation of Nb-24Ti-18Si Silicide Based Alloys." Materials 11, no. 9 (September 1, 2018): 1579. http://dx.doi.org/10.3390/ma11091579.
Повний текст джерелаHuang, Wei-Jie, Yu-Yang Chen, Hsiu-Ming Hsu, and Kuo-Chang Lu. "Single Crystalline Iron Silicide and Beta-Iron Disilicide Nanowires Formed through Chemical Vapor Deposition." Materials 11, no. 12 (November 27, 2018): 2384. http://dx.doi.org/10.3390/ma11122384.
Повний текст джерелаKitano, Yasuyuki, Koichi Yamamoto, Masashi Wada, Jingtian Yin, Yumio Toda, Koji Tanaka, Eishi Tanabe, Masao Komatsu, and Tetsuo Sakai. "Modulated structures in amorphous films of Cr-silicide prepared by electron-beam-deposition." International Journal of Materials Research 97, no. 3 (March 1, 2006): 310–14. http://dx.doi.org/10.1515/ijmr-2006-0049.
Повний текст джерелаSuvorova E. I., Solomkin F. Yu., Arkharova N. A., Sharenkova N. V., and Isachenko G. N. "Microstructure and phase composition of an alloy of iron and chrome disilicides." Semiconductors 56, no. 2 (2022): 151. http://dx.doi.org/10.21883/sc.2022.02.53041.33.
Повний текст джерелаRusskikh, M. A., I. S. Polkovnikov, V. V. Panteleeva, and A. B. Shein. "Passivation on manganese monosilicide in sulfuric acid electrolytes." Вестник Пермского университета. Серия «Химия» = Bulletin of Perm University. CHEMISTRY 10, no. 2 (2020): 221–32. http://dx.doi.org/10.17072/2223-1838-2020-2-221-232.
Повний текст джерелаde Silva, Milantha, Teruhisa Kawasaki, and Shinichiro Kuroki. "Low Resistance Ti5Si3/TiC Ohmic contact on Ion-Implanted n-Type 4H-SiC C Face." Materials Science Forum 924 (June 2018): 409–12. http://dx.doi.org/10.4028/www.scientific.net/msf.924.409.
Повний текст джерелаSidorenko, S. I., S. M. Voloshko, Yu M. Мakogon, O. P. Pavlov, I. E. Kotenko, S. O. Zamulko, and S. I. Konorev. "Structural and Concentration Heterogeneities during Formation of Silicide Phases in the Thin Film System Ti(5nm)/Ni(24nm)/Si(001)." Defect and Diffusion Forum 344 (October 2013): 79–84. http://dx.doi.org/10.4028/www.scientific.net/ddf.344.79.
Повний текст джерелаShadrin, Kirill V., Viktoriya Panteleeva, and Anatoly B. Shein. "CORROSION-ELECTROCHEMICAL BEHAVIOR OF IRON DISILICIDE IN SULFURIC ACID ELECTROLYTE." Вестник Пермского университета. Серия «Химия» = Bulletin of Perm University. CHEMISTRY 12, no. 3 (2022): 148–57. http://dx.doi.org/10.17072/2223-1838-2022-3-148-157.
Повний текст джерелаLi, Feitao, Siyao Wan, Dong Wang, and Peter Schaaf. "Formation of nanoflowers: Au and Ni silicide cores surrounded by SiOx branches." Beilstein Journal of Nanotechnology 14 (January 20, 2023): 133–40. http://dx.doi.org/10.3762/bjnano.14.14.
Повний текст джерелаPauleau, Y., F. C. Dassapa, Ph Lami, J. C. Oberlin, and F. Romagna. "Silicide formation in metal/Si structures and diffusion barrier properties of CVD tungsten films." Journal of Materials Research 4, no. 1 (February 1989): 156–62. http://dx.doi.org/10.1557/jmr.1989.0156.
Повний текст джерелаChen, Z. X., Z. Fang, Y. Wang, Y. Yang, A. Kamath, X. P. Wang, N. Singh, G. Q. Lo, D. L. Kwong, and Y. H. Wu. "Impact of Ni Concentration on the Performance of Ni Silicide/HfO2/TiN Resistive RAM (RRAM) Cells." Journal of Electronic Materials 43, no. 11 (July 29, 2014): 4193–98. http://dx.doi.org/10.1007/s11664-014-3309-9.
Повний текст джерелаPark, Seran, Hyunsu Shin, Eunjung Ko, and Dae‐Hong Ko. "Effect of P Concentration on Ti Silicide Formation in In‐Situ P Doped Epitaxial Si Films." physica status solidi (a) 216, no. 10 (January 24, 2019): 1800620. http://dx.doi.org/10.1002/pssa.201800620.
Повний текст джерелаLarionov, Alexey V., Kirill V. Pikulin, Vladimir M. Chumarev, Lyudmila Y. Udoeva, and Leonid A. Smirnov. "Phase composition and microstructure of Mo-Si-V hypoeutectic alloys obtained under non-equilibrium crystallization conditions." Butlerov Communications 57, no. 1 (January 31, 2019): 136–42. http://dx.doi.org/10.37952/roi-jbc-01/19-57-1-136.
Повний текст джерелаRosales, I., D. Ponce, MJ Garcia-Ramirez, and R. Guardian. "Effect of Chromium Addition on the Cyclic Oxidation Resistance of Pseudo-Binary (Mo,Cr)3 Si Silicide Alloy." High Temperature Materials and Processes 37, no. 9-10 (October 25, 2018): 943–49. http://dx.doi.org/10.1515/htmp-2017-0099.
Повний текст джерелаMuret, P., I. Ali, and M. Brunel. "Semiconducting iron silicide thin films on silicon (111) with large Hall mobility and low residual electron concentration." Semiconductor Science and Technology 13, no. 10 (October 1, 1998): 1170–79. http://dx.doi.org/10.1088/0268-1242/13/10/020.
Повний текст джерелаSuwa, Motoo. "Influence of silicon concentration and layering of molybdenum silicide on the reliability of Al–Si–Cu interconnections." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 9, no. 3 (May 1991): 1487. http://dx.doi.org/10.1116/1.585454.
Повний текст джерелаWidanarto, Wahyu, Farzand Abdullatif, Christoph Senft, and Walter Hansch. "Effect of Annealed Si/Ti/Pt Hetero Structure on The Response Time and Signals of Hydrogen Sensors." Indonesian Journal of Physics 22, no. 1 (November 3, 2016): 17–21. http://dx.doi.org/10.5614/itb.ijp.2011.22.1.3.
Повний текст джерелаLim, Phyllis S. Y., Rinus T. P. Lee, Mantavya Sinha, Dong Zhi Chi, and Yee-Chia Yeo. "Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films." Journal of Applied Physics 106, no. 4 (August 15, 2009): 043703. http://dx.doi.org/10.1063/1.3197144.
Повний текст джерелаPanciera, F., K. Hoummada, C. Perrin, M. El Kousseifi, R. Pantel, M. Descoins, M. Gregoire, M. Juhel, and D. Mangelinck. "Ni(Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation." Microelectronic Engineering 120 (May 2014): 34–40. http://dx.doi.org/10.1016/j.mee.2013.12.016.
Повний текст джерелаCuong, Vuong Van, Seiji Ishikawa, Hiroshi Sezaki, Tomonori Maeda, Satoshi Yasuno, Tomoyuki Koganezawa, and Shinichiro Kuroki. "Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC." Materials Science Forum 963 (July 2019): 498–501. http://dx.doi.org/10.4028/www.scientific.net/msf.963.498.
Повний текст джерелаZanatta, A. R., D. C. Ingram, and M. E. Kordesch. "Influence of Ni concentration on the crystallization of amorphous Si films and on the development of different Ni-silicide phases." Journal of Applied Physics 116, no. 12 (September 28, 2014): 123508. http://dx.doi.org/10.1063/1.4896589.
Повний текст джерелаNandi, K. C., D. Mukherjee, A. K. Biswas, and H. N. Acharya. "Optimization of acid concentration, temperature and particle size of magnesium silicide, obtained from rice husk, for the production of silanes." Journal of Materials Science Letters 12, no. 16 (1993): 1248–50. http://dx.doi.org/10.1007/bf00506325.
Повний текст джерелаSuvorova, Veronika, Andrey Nepapushev, Dmitrii Suvorov, Kirill Kuskov, Pavel Loginov, and Dmitry Moskovskikh. "Investigation of the Effect of Molybdenum Silicide Addition on the Oxidation Behavior of Hafnium Carbonitride." Journal of Composites Science 7, no. 1 (January 10, 2023): 25. http://dx.doi.org/10.3390/jcs7010025.
Повний текст джерелаHadi, Shaikh Mohd Hizami Shaikh Abd, Latiffah Zakaria, Siti Nordahliawate Mohamed Sidique, Murnita Mohmad Mahyudin, and Nik Mohd Izham Mohamed Nor. "The potential of soluble silicon for managing white root disease in rubber (Hevea brasiliensis)." October 2021, no. 15(10):2021 (October 2, 2021): 1346–54. http://dx.doi.org/10.21475/ajcs.21.15.10.p3343.
Повний текст джерелаYang, Jian Ping. "Visualization Experimental Study on Organic-Inorganic Crosslinked Plugging System Plugging." Advanced Materials Research 868 (December 2013): 574–79. http://dx.doi.org/10.4028/www.scientific.net/amr.868.574.
Повний текст джерелаLai, Hui Xian, Liu Qing Huang, Ming Fang, Cheng Hao Lu, Juan Chen, De Qin Yu, Jin Tang Li, Wen Hui Ma, Jian Ning Shen, and Xue Tao Luo. "Precipitation Phase and Impurities Distribution of Metallurgical Grade Silicon by Vacuum Refining Followed Slag Treatment." Advanced Materials Research 813 (September 2013): 492–96. http://dx.doi.org/10.4028/www.scientific.net/amr.813.492.
Повний текст джерелаHoa, Nguyen Thi, Nguyen Quang Hoc, and Hua Xuan Dat. "Study on the Thermodynamic Properties of Thin Film of FCC Interstitial Alloy AuSi at Zero Pressure Using the Statistical Moment Method." Physics 5, no. 1 (January 6, 2023): 59–68. http://dx.doi.org/10.3390/physics5010005.
Повний текст джерелаBelov, B., A. Trotsan, and O. Vlasova. "Analysis of the structural and chemical state of the duplex – system of silicates – silicides of alkaline earth metals. Message 2. Duplex - system SiO2-MgO-CaO : Si-Mg–Ca." Casting processes 151, no. 1 (March 2, 2022): 12–19. http://dx.doi.org/10.15407/plit2023.01.012.
Повний текст джерелаFathauer, Robert W., Thomas George, and W. Thomas Pike. "Columnar and Subsurface Silicide Growth with Novel Molecular Beam Epitaxy Techniques." MRS Proceedings 263 (1992). http://dx.doi.org/10.1557/proc-263-139.
Повний текст джерелаJuang, M. H., C. I. Ou-Yang, H. C. Cheng, and C. T. Lin. "Improvement of Thin Palladium and Platinum Silicide Films On (100) Si Substrates By Incorporating Phosphorus Dopant." MRS Proceedings 648 (2000). http://dx.doi.org/10.1557/proc-648-p11.32.
Повний текст джерелаHoffman, Nathan J., Roger Ketcheson, Daniel Stambaugh, Laura Safran, Richard Campos, Jerry Mase, and Daniel Codi. "Influence of Titanium Nitride Cap Layer Thickness on the Oxygen Sensitivity of Cobalt Films During Silicide Processing." MRS Proceedings 1108 (2008). http://dx.doi.org/10.1557/proc-1108-a09-07.
Повний текст джерелаBewlay, B. P., P. W. Whiting, A. W. Davis, and C. L. Briant. "Creep Mechanisms in Niobium-Silicide Based In-Situ Composites." MRS Proceedings 552 (1998). http://dx.doi.org/10.1557/proc-552-kk6.11.1.
Повний текст джерелаBewlay, B. P., M. R. Jackson, and H. A. Lipsitt. "Ti-Modified Niobium-Silicide Based Directionally Solidified in-situ Composites." MRS Proceedings 460 (1996). http://dx.doi.org/10.1557/proc-460-715.
Повний текст джерелаHerner, S. B., V. Krishnamoorthy, H. G. Robinson, and K. S. Jones. "The Effect of Titanium Silicidation on Type II End-of-Range Dislocation Loops." MRS Proceedings 337 (1994). http://dx.doi.org/10.1557/proc-337-469.
Повний текст джерелаHong, Q. Z., and J. M. E. Harper. "Temperature Dependence of Ar Sputtering of CoSi2 Thin Films on Si and SiO2." MRS Proceedings 235 (1991). http://dx.doi.org/10.1557/proc-235-319.
Повний текст джерелаGalkin, Nickolay G., Dmitrii L. Goroshko, Alexander S. Gouralnik, Sergei A. Dotsenko, and Andrei N. Boulatov. "Formation and Electric Properties of Disordered Yb Layers on Si(111)7×7 Surface." MRS Proceedings 770 (2003). http://dx.doi.org/10.1557/proc-770-i3.7.
Повний текст джерелаSitaram, A. R., and S. P. Murarka. "Cobalt Silicide Formation on Polysilicon: Dopant Effects on Reaction Kinetics and Silicide Properties." MRS Proceedings 181 (1990). http://dx.doi.org/10.1557/proc-181-185.
Повний текст джерелаSitaram, A. R., and S. P. Murarka. "Cobalt Silicide Formation on Polysilicon: Dopant Effects on Reaction Kinetics and Silicide Properties." MRS Proceedings 182 (1990). http://dx.doi.org/10.1557/proc-182-83.
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