Дисертації з теми "Silicide concentration"
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Emeraud, Thierry. "Etude et modélisation d'un générateur photovoltai͏̈que à forte concentration pour cellules au silicium : contribution à la caractérisation in situ des cellules solaires à concentration." Aix-Marseille 3, 1989. http://www.theses.fr/1989AIX30082.
Повний текст джерелаLiu, Yanan 1981. "Sulfur concentration at sulfide saturation in anhydrous silicate melts at crustal conditions." Thesis, McGill University, 2006. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=98753.
Повний текст джерелаThis model predicts the SCSS in anhydrous silicate melts from rhyolitic to basaltic compositions at crustal conditions from 1 bar to 1.25 GPa, temperatures from ~1200 to 1400ºC, and oxygen fugacities between approximately two log units below the fayalite-quartz-magnetite buffer and one log unit above the nickel-nickel oxide buffer. For cases where the oxygen and sulfur fugacities cannot be adequately estimated a simpler model also works acceptably: lnSppm =-5328T+8.431+1.244 lnMFM-0.01704P T+lnaFeS where aFes is the activity of FeS in the sulfide melt and is well approximated by a value of 1. Additional experiments were performed on other basalts in a temperature range from 1250ºC to 1450ºC at 1 GPa to test the models. The model predictions and the measurements of the SCSS agree within 5%. Although I cannot fix exactly the stoichiometric coefficients of the reaction controlling sulfur dissolution, my experiments and models suggest that the solution reaction for sulfur in melts saturated with sulfide is similar to: 8FeSsulfide +3FeOsilicate+4O2-silicat e+2O2gas ⇔4S2-silicate+2S 2gas+11FeOsulfide where the subscripts indicate the phase and O 2- represents "free" oxygens in the silicate melt.
Keywords. sulfur, solubility model, dissolution mechanism, silicate melts
Serrari, Allal. "Etude de la nitruration thermique, à pression atmosphérique, de l'oxyde de silicium et du silicium." Paris 11, 1989. http://www.theses.fr/1989PA112404.
Повний текст джерелаThermal nitridation of silicon and oxidized silicon provides best dielectric properties than thin silicon dioxide used in M. O. S. Technology, that is the interest to study them. The nitridation was performed at atmospheric pressure in a furnace under NH3 at high temperature (900°C-1100°C) for various times between 5 secondes and 2 heures. In order to understand the mechanism of nitridation, the influence of several parameters on the chemical composition of the resulting layers has been studied. The physico-chemical characterization was carried-out throught complementary analysis technics such as: nuclear reaction analysis, Auger electron and Xray spectrometries, secondary ion mass spectrometry and ellipsometry. It has been shown that the nitridation of silicon gives layers containing oxygen. Their thickness increases with time and temperature but saturates after one hour (80 A at 1100°C). Nitrided silicon dioxide (oxinitride) is inhomogenous with a nitrogen-rich surface layer and a pile-up of nitrogen at the interface oxinitride/silicon. This pile-up was observed for a 30 secondes nitridation of a 450 A oxide/ that mean a diffusion coefficient of 3. 10-13 cm2/s. The diffusion coefficient decreases rapidly with nitridation time, reach 10-15cm2 /s for 10 minutes. The nitrogen incorporation in the oxide film is accompagned with a de- crease of the oxygen amount. The atomic transport mecanism of oxygen during the nitridation was studied by using isotopique oxides. A model for the nitridation mechanism has been proposed. High frequency (1 MHZ) capacitance-voltage measurements were used in order to determine the flatband voltage and fixed charges in the formed layers. The properties of oxidation-resistance revealed by the layer have been pointed-out
Benabbas, Tarik. "Activité électrique de bicristaux de silicium élaborés avec un gradient de concentration en aluminium." Paris 11, 1992. http://www.theses.fr/1992PA112473.
Повний текст джерелаCouderc, Romain. "Etude du comportement thermique et électrique des cellules photovoltaïques en silicium cristallin sous concentration." Thesis, Lyon, INSA, 2015. http://www.theses.fr/2015ISAL0054/document.
Повний текст джерелаSilicon is largely used to produce solar cells but not for applications under concentration. Nevertheless, it has a great potential under concentration thanks to its low cost and the maturity of its industry. Moreover, it is possible to cogenerate electric and thermal power in order to increase the energy output. Cogeneration and concentration imply a higher operating temperature than under standard conditions. Thus, it is interesting to understand the thermal and électrical behavior of the cell as a functiton of its temperature. However the variation of the operating temperature is often ignored. In order to change this, we propose an electro-thermo-radiative model for crystalline silicon solar cells. It couples all phenomenon taking place in an illuminated solar cell. Thanks to this thesis, the importance of the thermal behavior is outlined. For example, the temperature variation as a function of the voltage that we confirmed experimentaly thanks to mesures of the cell temperature at Mpp and at Voc. One of the most important parameters in a silicon solar cell is the intrinsic carrier density, ni. The work on the electro-thermo-radiative model led us to propose a new semi-empirical temperature variation of ni. In addition to these theoretical analysis, we realized ionically implanted interdigitated back contacts solar cells (3IBC). Thanks to this work fewer process steps are needed and the improved metallization (Si/Ti/Ag) possibly lead an absolute Jsc gain of 0.72 mA.cm-2. The efficiency of the best 3IBC cell is 14.6% under 1 sun illumination with a particularly low series resistance (0.4 Ω.cm2) which confirm the potential of such cells for linear concentration
Crampette, Laurent. "Contribution à la réalisation de cellules photovoltaïques à concentration à base de silicium monocristallin." Thesis, Montpellier 2, 2014. http://www.theses.fr/2014MON20102/document.
Повний текст джерелаLGBC (Laser Grooved Buried Contact) solar cells was invented and developed by M.GREEN at UNSW. Grooved contact allow to reach a good serial resistivity without incresing the shadowing of the solar cell. In this report we will study the different step necessarry to build this kind of photovoltaic cells. Fisrt we will see the impact of laser effects on silicon and the different parameters to adapte red and green laser for grooved contct. The we will study to way to create selective emitter, on by two diffusion and the second one by diffusion throught a silicon nitride layer. Then we will develope two nickel metallisation one electrolytique and one electroless
Vandenbossche, Eric. "Contribution à la modélisation de la diffusion des dopants en fortes concentrations dans le silicium." Lille 1, 1994. http://www.theses.fr/1994LIL10158.
Повний текст джерелаGuillo, Lohan Benoit. "Modélisation, élaboration et caractérisation de cellules photovoltaïques à base de silicium cristallin pour des applications sous concentration." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI093/document.
Повний текст джерелаThe electrical performances of silicon based solar cells strongly degrade when increasing their temperature. However, such a well-known issue is too scarcely considered in the phovoltaic industry. To prevent the degradation of silicon based solar cells, two ways of improvement can be explored : one can either decrease the cells’ functionning temperature or either reduce the temperature degradation coefficient. As light intensity tends to favor cell heating, the study is even more important under concentrated sunlight. Regarding high light intensities, active cooling systems can be used to drastically reduce the cell temperature. For low light intensities, passive cooling systems, such as radiative cooling, are more energetically savy. The thesis aims at studying the electro-thermal behavior of cells under low light intensities. An innovative experimental set-up has been developped during this thesis to quantify the variation of the cell temperature with the applied bias voltage. When increasing the bias, an evolution of the cell emissivity is observed because of a variation of the minorities carrier concentration. The radiative cooling is at its lowest at the short circuit current and peaks its highest value at the open circuit voltage : as a result, the reached temperature is higher at the short circuit current than at the open circuit voltage. For a given solar cell, under 3 suns, a temperature shift of 6.2 °C was measured between these two points. The control of the fabrication process gives the opportunity to analyse the influence of the base doping and cell architecture on the evolution of the radiative cooling with the applied bias. Furthermore, the comparison between the electro-thermal behaviors of solar cells, which are related to their type of doping, has shown a lower thermal degradation coefficient of the open circuit voltage for n-type based dope solar cells. For example, at 60°C and under 1 sun, we measured a thermal degradation coefficient BVoc = −0.45% %·°C-1 for a n type solar cell whereas the p type solar cell recorded BVoc = −0.49% %·°C-1
Pavlov, Marko. "Modélisation numérique du couplage thermique-photoélectrique pour des modules photovoltaïques sous faible concentration." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS361/document.
Повний текст джерелаThe poor utilisation of the inter-row irradiation limits the production of photovoltaic (PV) modules. The "Aleph" project explores the potential of adding inter-row planar reflectors to increase the system yield, and defines clear rules for optimal settings of such systems in a given location and under a given climate. This work presents a multiphysics model of the system, numerical simulations of its behaviour, and the comparison with experimental data. Two PV module technologies are tested: amorphous silicon (a-Si) and polycrystalline silicon (p-Si). The experimental data show significant gains in produced energy brought by the reflectors. The gains are higher for a-Si modules compared to p-Si. The modelling work combines a Monte-Carlo ray-tracing optical model (EDStaR), a photo-electric model (SPICE), and an empirical thermal model. The complete model is calibrated with measurements using an evolutionary algorithm. Once calibrated, the model demonstrates good performance in predicting the module power output as a function of atmospheric and irradiance data
Vahanian, Elina. "Développement de couches antireflets à base de nanoparticules de silice pour des systèmes photovoltaïques à haute concentration." Doctoral thesis, Université Laval, 2017. http://hdl.handle.net/20.500.11794/28212.
Повний текст джерелаThe subject of this thesis is to focus on the research and development of an antireflective coating (ARC) to coat surfaces with specific structuration (not plane). The surfaces in question are those of optical components used in high concentrating photovoltaic (HCPV) systems. This project has been initiated by Opsun Technologies Inc. after they were experiencing reflection phenomena when the concentrating optical components were added in the system. Indeed, to concentrate light on a photovoltaic (PV) cell, it is essential to use a lens (Fresnel lens). Furthermore, to ensure reception of all the incident wavelengths, a second optical component is added in the HCPV system. It can be assimilated to a waveguide, which is aimed to homogenize the rays. More importantly, it has the property to increase the angular aperture of the received light (±3.2° instead of the usual ±0,5° à ±1°). Thus, adding this second optical component, added a reflection phenomenon due to the extra interface, preventing the component to be used for its initial property. The aim of this project is thus to produce an ARC and coat these surfaces with a specific method, the whole processes must be industrializable at the same time. Hence, a first step was aimed to investigate different existing ARC production and coating methods that can correspond to our required properties. Classical ARC production methods have quickly been considered as non-eligible, therefore new methods have been explored such as nanostructured (NS) ARC or coatings based on nanoparticles (NP). In a second part of the work, a NS (kindly provided by the Fraunhofer institute), was studied in laboratory conditions, to know its optical properties (transmission, reflection, scattering). Afterwards, it was introduced in the HCPV system to get real-time studies of the electrical performance. The NS did show an increase in the optical transmission, on the whole wavelength ranges we are interested in (350-1500nm), which increased from 91,6% (without AR) up to 98,7% , which resulted in a direct increase of the electrical performance of the HCPV that was about 5%. Anyways, the NS is still a method developed and used on a laboratory level and requires a lot of specific production conditions, increasing its final coast (see Appendix 8.1). Thus, it was decided that coatings based on NP needed also to be investigated. A third step of this work was then to produce ARC based on silica NP using a well-known production method, which is the sol-gel process. The obtained NP were then deposed by a homemade dip coating (DC) method on glass and PMMA slides and their optical properties were studied (on a wavelength band varying from 380 to 1500nm). In this case, we also noticed an increase in the transmission, which was totally dependent on the ARC thicknesses. Indeed, a shift of the maximum transmission towards higher wavelengths was observed when the ARC thickness increased. It is important to mention that, even though a certain transmission increase on the considered wavelengths was obtained, a maximum increase on a specific wavelength (in the visible wavelengths, from 400nm to 800nm) band was observed for each ARC (or thickness). Those maximum transmissions of the different ARC, when compared, showed an increase from 92,1% (without AR) up to 99,2% depending on the ARC thickness. When the ARC were added in the HCPV system, the response of the electrical performance did not increase gradually, depending of the increase of the coating thickness, which was our expectation. Instead, it reached a maximum for a specific thickness (around 130nm (ARC4 in Chapitre 3)), before it decreased when higher thicknesses were used. The maximum electrical output value obtained has been found to be comparable to the results obtained using the NS (5%). This phenomenon can be explained by the specific properties of the PV cells (multijunction (MJ), see Chapitre 3 for the explanation). Thus, for a specific PV cell a specific ARC can be produced to optimize the electrical yield of the HCPV system, depending on the conditions they are used in. An ultimate step consisted in the environmental testing (accelerated tests) of our obtained ARC, to have information about their resistance in terms of mechanical deterioration, temperature and UV variation, for the same lifetime warranty of CPV systems. The results obtained showed a decrease of the ARC efficiency that was about 3% at the end of the temperature tests and a 1,5% variation of the transmission was observed after the UV tests for small wavelengths (< 500nm). This is relatively low compared to the warranty of CPV system efficiencies that are expected to decrease about 20% in 25 year lifetime.
Altenberend, Jochen. "Cinétique de la purification par plasma de silicium pour cellules photovoltaïques : étude expérimentale par spectrométrie Kinetics of the plasma refining process of silicon for solar cells." Thesis, Grenoble, 2012. http://www.theses.fr/2012GRENI082/document.
Повний текст джерелаThe plasma refining process studied in this work can efficiently remove boron fromsilicon. In combination with other processes one can purify silicon for solar cells atlow costs. The hot gases from the thermal plasma torch are blown onto the surface ofa silicon melt. However the chemistry at the silicon surface is so far poorlyunderstood. For a better understanding of the process we do parametricmeasurements of the boron removal rate, we calculate the chemical equilibriumconcentrations and we measure the temperature and radical concentrations in theplasma, using emission spectroscopy.The comparison of boron removal rates from literature to calculated chemicalequilibrium concentrations shows that the chemical reactions at the silicon surfaceare probably at chemical equilibrium. However, the boron to silicon ratio in theexhaust gases is higher than predicted by the chemical equilibrium calculations. Thisis probably due to the formation of a silica aerosol in the reactive boundary layer. Theresults of the parametric measurements of the boron removal rate agree also withthis theory.Several validation experiments showed that emission spectroscopy with Abelinversion can be used to measure the temperature and the concentration ratios O/Arand H/Ar in the plasma. The spectroscopic results helped to improve significantly anumerical mode. The results also showed that hydrogen diffuses strongly in theplasma while oxygen diffuses much less
Morel, Nathalie. "Etude des mélanges silice-polydiméthylsiloxane : adsorption, gonflement, viscoélasticité." Université Joseph Fourier (Grenoble), 1995. http://www.theses.fr/1995GRE10203.
Повний текст джерелаJoslin, Justin Cale. "Determining the role of chemical weathering reactions and hyporheic exchange on silicate concentrations in dry valley streams, Antarctica." Diss., Connect to online resource, 2005. http://wwwlib.umi.com/cr/colorado/fullcit?p1427770.
Повний текст джерелаLecoq, Xavier. "Etude de l'hydratation à concentration contrôlée du silicate tricalcique ca#3sio#5 et des caractéristiques de ses produits de réaction." Dijon, 1993. http://www.theses.fr/1993DIJOS063.
Повний текст джерелаSegaud, Jean-Pierre. "Caractérisation d'oxynitrures de silicium par spectroscopie des électrons Auger associée à la pulvérisation ionique." Grenoble 1, 1988. http://www.theses.fr/1988GRE10037.
Повний текст джерелаPASQUINI, Matteo. "A NUMERICAL APPROACH TO OHMIC LOSSES ASSESSMENT IN CONCENTRATING PHOTOVOLTAIC SYSTEMS." Doctoral thesis, Università degli studi di Ferrara, 2012. http://hdl.handle.net/11392/2388797.
Повний текст джерелаEl, Rhess Es-Saïd. "Synthèse, mode de croissance et caractérisations physico-chimiques de microparticules monodispersés de silice dans le système SI(OC : :(2)h::(5))::(4)-nh::(3)-h::(2)o-roh." Besançon, 1988. http://www.theses.fr/1988BESA2023.
Повний текст джерелаSoliman, Lélia. "Caractérisation de composants microélectroniques de test pour la technologie ULSI sur silicium." Rouen, 1999. http://www.theses.fr/1999ROUES048.
Повний текст джерелаHe, Yingning. "Lateral porous silicon membranes for planar microfluidic applications." Thesis, Toulouse 3, 2016. http://www.theses.fr/2016TOU30255/document.
Повний текст джерелаLab on a chip devices aim at integrating functions routinely used in medical laboratories into miniaturized chips to target health care applications with a promising impact foreseen in point-of-care testing. Porous membranes are of great interest for on-chip sample preparation and analysis since they enable size- and charge-based molecule separation, but also molecule pre-concentration by ion concentration polarization. Out of the various materials available to constitute porous membranes, porous silicon offers many advantages, such as tunable pore properties, large porosity, convenient surface chemistry and unique optical properties. Porous silicon membranes are usually integrated into fluidic chips by sandwiching fabricated membranes between two layers bearing inlet and outlet microchannels, resulting in three-dimensional fluidic networks that lack the simplicity of operation and direct observation accessibility of planar microfluidic devices. To tackle this constraint, we have developed two methods for the fabrication of lateral porous silicon membranes and their monolithic integration into planar microfluidics. The first method is based on the use of locally patterned electrodes to guide pore formation horizontally within the membrane in combination with silicon-on-insulator (SOI) substrates to spatially localize the porous silicon within the channel depth. The second method relies on the fact that the formation of porous silicon by anodization is highly dependent on the dopant type and concentration. While we still use electrodes patterned on the membrane sidewalls to inject current for anodization, the doping via implantation enables to confine the membrane analogously to but instead of the SOI buried oxide box. Membranes with lateral pores were successfully fabricated by these two methods and their functionality was demonstrated by conducting filtering experiments. In addition to sample filtration, we have achieved electrokinetic pre-concentration and interferometric sensing using the fabricated membranes. The ion selectivity of the microporous membrane enables to carry out sample pre-concentration by ion concentration polarization with concentration factors that can reach more than 103 in 10 min by applying less than 9 V across the membrane[TL1]. These results are comparable to what has already been reported in the literature using e.g. nanochannels with much lower power consumption. Finally, we were able to detect a change of the porous silicon refractive index through the shift of interference spectrum upon loading different liquids into the membrane. The work presented in this dissertation constitutes the first step in demonstrating the interest of porous silicon for all-in-one sample preparation and biosensing into planar lab on a chip
Herlin-Boime, Nathalie. "Mesures in situ de températures et concentrations sur le système Si-C-H dans un réacteur de dépôt chimique en phase vapeur." Paris 11, 1989. http://www.theses.fr/1989PA112368.
Повний текст джерелаBenkherourou, Ouahab. "Conception et mise au point d'un analyseur hemispherique en vue de spectroscopies d'electrons resolues angulairement : caracterisation d'interfaces si/sio::(2) et si/sio::(x)n::(y) obtenues par implantation ionique a faible energie." Université Louis Pasteur (Strasbourg) (1971-2008), 1987. http://www.theses.fr/1987STR13014.
Повний текст джерелаSelmani, Larbi. "Etude des défauts électriques associes à l'or et au fer dans le silicium." Lyon 1, 1985. http://www.theses.fr/1985LYO19018.
Повний текст джерелаLemiti, Mustapha. "Couches de dioxyde de silicium obtenues par dépôt chimique à partir d'une phase gazeuse (C. V. D. ) : élaboration et caractérisation." Lyon 1, 1985. http://www.theses.fr/1985LYO19022.
Повний текст джерелаEtheve, Jocelyne. "Corrélation potentiel d'écoulement-concentration interfaciale de protéines à l'interface silice-solution : influence d'un traitement externe par de la poly(éthylèneimine) sur la pénétration du lysozyme à l'intérieur d'une membrane portant des groupes sulfonates." Montpellier 2, 2003. http://www.theses.fr/2003MON20004.
Повний текст джерелаBourdarot, Frédéric. "Etude des structures magnétiques des composés NpX (X=P, Bi, S, Se et Te) et des excitations magnétiques dans U(Ru1-xRhx)2Si2 par diffusion de neutrons." Université Joseph Fourier (Grenoble), 1994. http://www.theses.fr/1994GRE10199.
Повний текст джерелаReinholz, Uwe. "Darstellung eines Referenzmaterials für die ortsaufgelöste Wasserstoffanalytik in oberflächennahen Schichten mittels Kernreaktionsanalyse." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2007. http://nbn-resolving.de/urn:nbn:de:swb:14-1176198574703-16051.
Повний текст джерелаSchaaf, Pierre. "La technique de reflectometrie : sa mise en oeuvre et son application a l'etude de l'adsorption de macromolecules a une interface solide/solution." Université Louis Pasteur (Strasbourg) (1971-2008), 1987. http://www.theses.fr/1987STR13039.
Повний текст джерелаReinholz, Uwe. "Darstellung eines Referenzmaterials für die ortsaufgelöste Wasserstoffanalytik in oberflächennahen Schichten mittels Kernreaktionsanalyse." Doctoral thesis, Technische Universität Dresden, 2005. https://tud.qucosa.de/id/qucosa%3A24977.
Повний текст джерелаOrignac, Xavier. "Fabrication et caractérisation de guides d'ondes sol-gel dopés terres-rares pour la réalisation d'amplificateurs optiques intégrés." Grenoble INPG, 1997. http://www.theses.fr/1997INPG0014.
Повний текст джерелаBen, Amor Sami. "MAGNETOTRANSPORT SOUS PRESSION HYDROSTATIQUE DANS LES HETEROSTRUCTURES (A1xGa1-x)0. 48In0. 52As/Ga0. 47In0. 53As et Ga0. 50In0. 50P/GaAs." Toulouse, INSA, 1987. http://www.theses.fr/1987ISAT0013.
Повний текст джерелаBenarfa, Houria. "Proprietes de photoluminescence de gaas : contribution a l'etude de gaas heteroepitaxie sur (ca,sr)f2 par la technique des jets moleculaires." Toulouse, INSA, 1986. http://www.theses.fr/1986ISAT0019.
Повний текст джерелаReiche, Rainer. "Elektronenspektroskopie und Faktoranalyse zur Untersuchung von ionenbeschossenen Metall (Re, Ir, Cr, Fe)-Silizium-Schichten." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2000. http://nbn-resolving.de/urn:nbn:de:swb:14-994160101234-34968.
Повний текст джерелаReiche, Rainer. "Elektronenspektroskopie und Faktoranalyse zur Untersuchung von ionenbeschossenen Metall (Re, Ir, Cr, Fe)-Silizium-Schichten." Doctoral thesis, Technische Universität Dresden, 1999. https://tud.qucosa.de/id/qucosa%3A24738.
Повний текст джерелаVernière, Anne. "Etude de siliciures ternaires : élaboration, propriétés structurales et magnétiques." Université Joseph Fourier (Grenoble), 1995. http://www.theses.fr/1995GRE10213.
Повний текст джерелаEl, Fouhaili Bandar. "Development of hydrophobic/superhydrophobic anti-fouling photopolymer coatings for PVC reactor." Thesis, Mulhouse, 2014. http://www.theses.fr/2014MULH6191.
Повний текст джерелаOur scientific approach has explored different strategies to develop a durable UV-cured coating with antifouling properties to prevent the crust formation. Firstly, the potential of fluoroacrylate photocurable coatings was exhaustively investigated. Indeed, their outstanding properties (low surface energy, chemical stability and high hydrophobicity...) could limit the adsorption of the AGC on the reactor walls and further encrusting. A bibliographic research highlighted the behavior of fluorinated monomers on film surface and the parameters affecting the hydrophobic properties. Different fluorinated monomers were selected. At low concentration, they provide hydrophobic surfaces on 316L stainless steel, the reference substrate. However, a decrease of the films surface hydrophobicity in hot water was observed with time, and was attributed to a disorganization of the fluorinated chains on the coating surface. An optimization of the amount of fluoroacrylate monomer was performed by confocal Raman microscopy (CRM) to promote the fluorinated chains stability on the surface before and after immersion in hot water at 80°C. The beneficial effect was found maximal at a concentration ranging from 1 to 1.8 wt%. However, even after this optimization, a decrease of the film surface hydrophobicity was observed for increased immersion time in hot water. Therefore, optimized fluoroacrylate monomer concentration was combined with alternated thermal/immersion post-treatment and has conducted to more stable photocured films. This result was attributed to a rigidification of the fluorinated chains on the film surface limiting thus, the extent of their disorganization. After this study realized at a laboratory scale, we tested the photocured coating in the VCM pilot reactor. A surface cleaning, an increase of the stainless steel roughness by shot blasting and the use of alkoxysilanes as coupling agents were implemented in order to enhance the adhesion properties of the photopolymer film on stainless steel. In addition, the use of a fluorinated monomer containing a heteroatom improved the rigidification when associated with the alternated thermal/immersion post-treatment. The crust formation was limited during four successive polymerizations in the VCM pilot reactor. A durable anti-fouling UV-coating could be not obtained due to some swelling phenomena resulting from the lack of coating adhesion or some abrasion occurring from small PVC pellets during the PVC polymerization.A second part of this project was dedicated to superhydrophobic coatings. Indeed, reducing interaction with water should lead to a better protection of the substrate. A literature review on the superhydrophobic surfaces has shown that the contact with hot water generally strongly affects their antiwetting properties and induces a large contact angle decrease. [...]
Rajasekar, P. "Thermoelectric Investigations of Si/β-FeSi2 composite". Thesis, 2018. https://etd.iisc.ac.in/handle/2005/5364.
Повний текст джерелаFernandes, Maria Jose. "Concentration and derivatisation in silicone rubber traps for gas chromatographic trace analysis of aldehydes." Diss., 2002. http://upetd.up.ac.za/thesis/available/etd-11212005-091558.
Повний текст джерелаKallel, Houssem. "Effets de la concentration des défauts sur la surface d'énergie potentielle du silicium amorphe." Thèse, 2008. http://hdl.handle.net/1866/8027.
Повний текст джерелаFernandes-Whaley, Maria Jose. "Concentration and derivatization in silicone rubber traps for mass spectrometric and gas chromatographic analysis of air and water pollutants." Thesis, 2008. http://upetd.up.ac.za/thesis/available/etd-01062009-131456.
Повний текст джерелаOn title page: Submitted in partial fulfilment of the requirements for the degree Doctor of Philosophy in Chemistry in the faculty of Natural and Agricultural Sciences of the University of Pretoria. Includes bibliographical references.