Готові списки джерел за темами / [SiH4 + CO2 + He] plasma

Добірка наукової літератури з теми "[SiH4 + CO2 + He] plasma"

Автор: Grafiati

Опубліковано: 7 вересня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Зміст

Статті в журналах
Дисертації
Тези доповідей конференцій

Ознайомтеся зі списками актуальних статей, книг, дисертацій, тез та інших наукових джерел на тему "[SiH4 + CO2 + He] plasma".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Статті в журналах з теми "[SiH4 + CO2 + He] plasma"

Samanta, Arup, and Debajyoti Das. "Structural investigation of nC-Si/SiOx:H thin films from He diluted (SiH4+CO2) plasma at low temperature." Applied Surface Science 259 (October 2012): 477–85. http://dx.doi.org/10.1016/j.apsusc.2012.07.070.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Samanta, Arup, and Debajyoti Das. "Studies on the structural properties of SiO:H films prepared from (SiH4+CO2+He) plasma in RF-PECVD." Solar Energy Materials and Solar Cells 93, no. 5 (May 2009): 588–96. http://dx.doi.org/10.1016/j.solmat.2008.12.005.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Sobajima, Yasushi, Shota Kinoshita, Shinnosuke Kakimoto, Ryoji Okumoto, Chitose Sada, Akihisa Matsuda, and Hiroaki Okamoto. "Control of growth process for obtaining high-quality a-SiO:H." Canadian Journal of Physics 92, no. 7/8 (July 2014): 582–85. http://dx.doi.org/10.1139/cjp-2013-0558.

Повний текст джерела

Анотація:

Film-growth process of hydrogenated amorphous silicon–oxygen alloys (a-SiO:H) from CO2/(CO2 + SiH4) plasma has been investigated to control the optoelectronic properties in the resulting materials. Optical emission spectroscopy results and simple simulation results for steady-state density of chemical species in the plasma indicate that main film-growth precursors for a-SiO:H are SiH3, OH, and O. Si dangling-bond defect density is drastically increased in a-SiO:H when increasing the CO2 gas ratio in CO2/(CO2 + SiH4) plasma, being caused by the increase in the contribution ratio of Si-related short-lifetime species (SiHx, x < 2) to film growth owing to a severe SiH4-molecule depletion because of high-rate consumption reaction of SiH4 with O produced from CO2 in the plasma. Considering the primary electron impact dissociation reactions of source gas molecules and several secondary chemical reactions in the plasma, the guiding principle for obtaining high quality a-SiO:H has been proposed.

Стилі APA, Harvard, Vancouver, ISO та ін.

Jo, Sanghyun, Suik Kang, Kyungjun Lee, and Ho Jun Kim. "Helium Metastable Distributions and Their Effect on the Uniformity of Hydrogenated Amorphous Silicon Depositions in He/SiH4 Capacitively Coupled Plasmas." Coatings 12, no. 9 (September 15, 2022): 1342. http://dx.doi.org/10.3390/coatings12091342.

Повний текст джерела

Анотація:

This study investigates, numerically, the spatial distribution of metastable helium (He*) in He/SiH4 capacitively coupled plasma (CCP) for the purpose of optimizing plasma density distributions. As a first step, we presented the results of a two-dimensional fluid model of He discharges, followed by those of He/SiH4 discharges to deposit hydrogenated amorphous silicon films, to investigate which factor dominates the coating uniformity. We retained our CCPs in the 300 mm wafer reactor used by the semiconductor industry in the recent past. Selected parameters, such as a sidewall gap (radial distance between the electrode edge and the sidewall), electrical condition of the sidewall, and position of the powered electrode, were considered. In addition, by increasing the gas pressure while varying the sidewall condition, we observed modification of the plasma distributions and, thus, the deposition rate profiles. According to the results, the shift in He* distributions was mainly due to the reduction in the electron mean free path under conditions of gas pressure higher than 100 Pa, as well as local perturbations in the ambipolar electric field due to the finite electrode structure. Small additions of SiH4 largely changed the He* density profile in the midplane of the discharge due to He* quenching. Furthermore, we found that the wide sidewall gap did not improve deposition uniformity against the expectation. This was because the excitation and ionization rate profiles were enhanced and localized only near the bottom electrode edge.

Стилі APA, Harvard, Vancouver, ISO та ін.

Ershov, I. A., V. I. Pustovoy, V. I. Krasovskii, A. N. Orlov, S. I. Rasmagin, L. D. Iskhakova, F. O. Milovich, M. N. Kirichenko, L. L. Chaikov, and E. A. Konstantinova. "Synthesis and properties of silicon carbide nanoparticles obtained by laser pyrolysis method." Physics and Chemistry of Materials Treatment 1 (2021): 51–57. http://dx.doi.org/10.30791/0015-3214-2021-1-51-57.

Повний текст джерела

Анотація:

The conditions for the synthesis of silicon carbide nanoparticles in a SiH4/C2H2/Ar/He gas mixture under the action of CO2 laser radiation with a wavelength of 10.6 μm are determined. It was found that laser synthesis of SiC particles is observed when the ratio of gas flows SiH4/C2H2 is in the range of 1.6-3.2. The temperature in the region of the reaction zone was ~1400-1500°C. Silicon carbide nanoparticles ~6 nm in diameter were obtained and their composition was investigated.

Стилі APA, Harvard, Vancouver, ISO та ін.

Park, Hwanyeol, and Ho Jun Kim. "Theoretical Analysis of Si2H6 Adsorption on Hydrogenated Silicon Surfaces for Fast Deposition Using Intermediate Pressure SiH4 Capacitively Coupled Plasma." Coatings 11, no. 9 (August 29, 2021): 1041. http://dx.doi.org/10.3390/coatings11091041.

Повний текст джерела

Анотація:

The rapid and uniform growth of hydrogenated silicon (Si:H) films is essential for the manufacturing of future semiconductor devices; therefore, Si:H films are mainly deposited using SiH4-based plasmas. An increase in the pressure of the mixture gas has been demonstrated to increase the deposition rate in the SiH4-based plasmas. The fact that SiH4 more efficiently generates Si2H6 at higher gas pressures requires a theoretical investigation of the reactivity of Si2H6 on various surfaces. Therefore, we conducted first-principles density functional theory (DFT) calculations to understand the surface reactivity of Si2H6 on both hydrogenated (H-covered) Si(001) and Si(111) surfaces. The reactivity of Si2H6 molecules on hydrogenated Si surfaces was more energetically favorable than on clean Si surfaces. We also found that the hydrogenated Si(111) surface is the most efficient surface because the dissociation of Si2H6 on the hydrogenated Si(111) surface are thermodynamically and kinetically more favorable than those on the hydrogenated Si(001) surface. Finally, we simulated the SiH4/He capacitively coupled plasma (CCP) discharges for Si:H films deposition.

Стилі APA, Harvard, Vancouver, ISO та ін.

Jia, Haijun, and Michio Kondo. "High rate synthesis of crystalline silicon films from SiH4+He using high density microwave plasma." Journal of Applied Physics 105, no. 10 (May 15, 2009): 104903. http://dx.doi.org/10.1063/1.3129321.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Das, Debajyoti, Madhusudan Jana та A. K. Barua. "Characterization of undoped μc-SiO:H films prepared from (SiH4+CO2+H2)-plasma in RF glow discharge". Solar Energy Materials and Solar Cells 63, № 3 (липень 2000): 285–97. http://dx.doi.org/10.1016/s0927-0248(00)00035-0.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Lee, Sung‐Woo, Du‐Chang Heo, Jin‐Kyu Kang, Young‐Bae Park, and Shi‐Woo Rhee. "Microcrystalline Silicon Film Deposition from H 2 ‐ He ‐ SiH4 Using Remote Plasma Enhanced Chemical Vapor Deposition." Journal of The Electrochemical Society 145, no. 8 (August 1, 1998): 2900–2904. http://dx.doi.org/10.1149/1.1838733.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Dian, J., J. Valenta, J. Hála, A. Poruba, P. Horváth, K. Luterová, I. Gregora, and I. Pelant. "Visible photoluminescence in hydrogenated amorphous silicon grown in microwave plasma from SiH4 strongly diluted with He." Journal of Applied Physics 86, no. 3 (August 1999): 1415–19. http://dx.doi.org/10.1063/1.370904.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Більше джерел

Дисертації з теми "[SiH4 + CO2 + He] plasma"

Lin, Hsiu-Chi, and 林秀錡. "The characteristics of SiH4-H2 plasma with additional He, Ne, Ar gases and their effects on the resultant properties of nc-Si:H thin films." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/em2hmr.

Повний текст джерела

Анотація:

碩士
明志科技大學
材料工程系碩士班
104
In this study, hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared using ICP-CVD system attached with four internal U-shaped low inductance antennas. Ar, He, and Ne gases were introduced into SiH4/H2 plasma during deposition, with the variation of gas flow rate and SiH4/H2 ratios. During deposition, an OES (optical emission spectrometer) and a plasma probe were used to characterize the conditions of plasma. The crystalllinity, structure, and Si-H bonding of these Si:H films were investigated using Raman scattering spectroscopy, XRD, and FTIR. The correlations of plasma characteristics and thin film properties were studied. It is found that the crystallinity of nc-Si:H film increases with the introduction of Ar, He, and Ne gases, especially when Ar is added. The plasma density and IH* increase with the increase of the inert gases, most likely due to penning ionization effect. The deposition rate decreases with the inert gases. This might be caused by the enhancement of hydrogen etching.

Стилі APA, Harvard, Vancouver, ISO та ін.

Тези доповідей конференцій з теми "[SiH4 + CO2 + He] plasma"

Akaishi, Ryushiro, Kouhei Kitazawa, Satoshi Ono, Kazuhiro Gotoh, Eiji Ichihara, Shinya Kato, Noritaka Usami, and Yasuyoshi Kurokawa. "Deposition and Characterization of Si Quantum Dot Multilayers Prepared by Plasma Enhanced Chemical Vapor Deposition using SiH4 and CO2 Gases." In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8548207.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Pershin, L., and J. Mostaghimi. "Yttria Deposition by a Novel Plasma Torch." In ITSC2010, edited by B. R. Marple, A. Agarwal, M. M. Hyland, Y. C. Lau, C. J. Li, R. S. Lima, and G. Montavon. DVS Media GmbH, 2010. http://dx.doi.org/10.31399/asm.cp.itsc2010p0038.

Повний текст джерела

Анотація:

Abstract Carbon dioxide (CO2) and hydrocarbons (such as CH4) gas mixtures generate plasmas with much higher enthalpy and thermal conductivity, leading to higher spray process efficiency and improved heat transfer to the sprayed powder. We have employed a DC plasma torch operated with CO2+CH4 gas mixture, which has been developed at the Centre for Advanced Coating Technologies (CACT) at the University of Toronto, to deposit various coatings. This study was focused on the effect of this plasma gas mixture on the in-flight particle parameters during plasma spraying of Yttria (Y2O3). The results were compared with a similar coating applied by the SG-100 torch (Praxair) with Ar+He gas mixture. The particulate plume scans show that with the CACT torch, all particles in measured volume were overheated at a distance of 120 mm. Cross-sections through the sprayed coatings were polished and examined under a scanning electron microscope. The dielectric properties of the two coatings were also compared with each other.

Стилі APA, Harvard, Vancouver, ISO та ін.

Sankur, Haluk, C. Pritt, and Jeffrey G. Nelson. "Plasma luminescence generated in laser evaporation of optical thin-film material." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1985. http://dx.doi.org/10.1364/oam.1985.fl2.

Повний текст джерела

Анотація:

The emission of the plasma generated when a pulsed CO2 laser is used to evaporate an optical thin-film material is analyzed by means of an optical multichannel analyzer in the 200-900-nm region. Source materials were Al2,O3, SiO2, HfO2, TiO2, and ZnO, which are absorbing at 10.6 µm. Very rich atomic spectra were obtained indicating the presence of excited neutrals, as well as singly, doubly, and triply ionized anions and cations. Molecular emission (e.g., Al–O) was observed when background gas pressures of O2, He, Ar, or N2 were increased to the range of 0.1–10 Torr. The optical power dependence of the emission intensity is nonlinear, indicating saturation behavior.

Стилі APA, Harvard, Vancouver, ISO та ін.

Decker, Jennifer E., Simon Lagacé, Jean Bérubé, Yves Beaudoin, and See Leang Chin. "Stable operation of a powerful 3-Hz line-tunable TEA-CO2 oscillator-amplifier system." In OSA Annual Meeting. Washington, D.C.: Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.tuqq1.

Повний текст джерела

Анотація:

We report a medium-repetition-rate, highpeak-power CO2 oscillatoramplifier chain producing 10.6 m pulses of up to 1014 W/cm2 for use in intense-laser-interaction experiments. It has a simple provision for reducing retroreflections. Parasitic oscillation and amplified back reflections are deleterious phenomena often associated with high gain laser amplifier chains. Because the gain duration of atmospheric amplifiers is relatively long, a long optical delay (about 50 m or more) is installed to reduce the amplifier gain before any back-reflected energy maybe amplified.1 Electro-optic crystals, plasma switches, or saturable absorber gas are often used to isolate the reflection. The latter method is the simplest. It depends on the relaxation time of the gas. A popular choice of SF6/He is not sufficient. We found that SF6:C2H6::5:760 mixture takes only 11 ns to relax.2 Situating such a saturable absorber cell in the amplification chain, therefore, substantially reduces amplified retroreflections without the need for high pressure gain modules or optical delays, and it simultaneously provides contrast enhancement. Our laser now routinely operates at 3 Hz, 1 ns, and 1 J/pulse for experiments on tunnel ionization of atoms and molecules.

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!