Статті в журналах з теми "SiGe SOLAR CELLS"
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Diaz, Martin, Li Wang, Dun Li, Xin Zhao, Brianna Conrad, Anasasia Soeriyadi, Andrew Gerger, et al. "Tandem GaAsP/SiGe on Si solar cells." Solar Energy Materials and Solar Cells 143 (December 2015): 113–19. http://dx.doi.org/10.1016/j.solmat.2015.06.033.
Повний текст джерелаZulkefle, Ahmad Aizan, Maslan Zainon, Zaihasraf Zakaria, Mohd Ariff Mat Hanafiah, Nurul Huda Abdul Razak, Seyed Ahmad Shahahmadi, Md Akhtaruzzaman, Kamaruzzaman Sopian, and Nowshad Amin. "A Comparative Study between Silicon Germanium and Germanium Solar Cells by Numerical Simulation." Applied Mechanics and Materials 761 (May 2015): 341–46. http://dx.doi.org/10.4028/www.scientific.net/amm.761.341.
Повний текст джерелаACHOUR, M. B., B. DENNAI, and H. KHACHAB. "STUDY SIMULATION OF TOP-CELL ON THE PERFORMANCE OF AlxGa1- xAs/Si1-xGexTANDEM SOLAR CELL." Digest Journal of Nanomaterials and Biostructures 15, no. 2 (April 2020): 337–43. http://dx.doi.org/10.15251/djnb.2020.152.337.
Повний текст джерелаSoeriyadi, Anastasia H., Brianna Conrad, Xin Zhao, Dun Li, Li Wang, Anthony Lochtefeld, Andrew Gerger, Ivan Perez-Wurfl, and Allen Barnett. "Increased Spectrum Utilization with GaAsP/SiGe Solar Cells Grown on Silicon Substrates." MRS Advances 1, no. 43 (2016): 2901–6. http://dx.doi.org/10.1557/adv.2016.354.
Повний текст джерелаHsieh, C. F., H. S. Wu, Teng Chun Wu, and M. H. Liao. "Periodic Nanostructured Thin-Film Solar Cells." Advanced Materials Research 860-863 (December 2013): 114–17. http://dx.doi.org/10.4028/www.scientific.net/amr.860-863.114.
Повний текст джерелаZhang, Qiu Bo, Wen Sheng Wei, and Feng Shan. "Analysis on micro-/poly-Crystalline SiGe Alloy Solar Cells." Advanced Materials Research 690-693 (May 2013): 2872–80. http://dx.doi.org/10.4028/www.scientific.net/amr.690-693.2872.
Повний текст джерелаCaño, Pablo, Manuel Hinojosa, Iván García, Richard Beanland, David Fuertes Marrón, Carmen M. Ruiz, Andrew Johnson, and Ignacio Rey-Stolle. "GaAsP/SiGe tandem solar cells on porous Si substrates." Solar Energy 230 (December 2021): 925–34. http://dx.doi.org/10.1016/j.solener.2021.10.075.
Повний текст джерелаSafi, M., A. Aissat, H. Guesmi, and J. P. Vilcot. "SiGe quantum wells implementation in Si based nanowires for solar cells applications." Digest Journal of Nanomaterials and Biostructures 18, no. 1 (March 2023): 327–42. http://dx.doi.org/10.15251/djnb.2023.181.327.
Повний текст джерелаDaami, A., A. Zerrai, J. J. Marchand, J. Poortmans, and G. Brémond. "Electrical defect study in thin-film SiGe/Si solar cells." Materials Science in Semiconductor Processing 4, no. 1-3 (February 2001): 331–34. http://dx.doi.org/10.1016/s1369-8001(00)00101-3.
Повний текст джерелаEisele, C., M. Berger, M. Nerding, H. P. Strunk, C. E. Nebel, and M. Stutzmann. "Laser-crystallized microcrystalline SiGe alloys for thin film solar cells." Thin Solid Films 427, no. 1-2 (March 2003): 176–80. http://dx.doi.org/10.1016/s0040-6090(02)01216-6.
Повний текст джерелаMaydell, K. V., K. Grunewald, M. Kellermann, O. Sergeev, P. Klement, N. Reininghaus, and T. Kilper. "Microcrystalline SiGe Absorber Layers in Thin-film Silicon Solar Cells." Energy Procedia 44 (2014): 209–15. http://dx.doi.org/10.1016/j.egypro.2013.12.029.
Повний текст джерелаFujiwara, Kozo, Wugen Pan, Noritaka Usami, Kohei Sawada, Akiko Nomura, Toru Ujihara, Toetsu Shishido, and Kazuo Nakajima. "Structural properties of directionally grown polycrystalline SiGe for solar cells." Journal of Crystal Growth 275, no. 3-4 (March 2005): 467–73. http://dx.doi.org/10.1016/j.jcrysgro.2004.12.023.
Повний текст джерелаRiaz, Muhammad, S. K. Earles, Ahmed Kadhim, and Ahmad Azzahrani. "Computer analysis of microcrystalline silicon hetero-junction solar cell with lumerical FDTD/DEVICE." International Journal of Computational Materials Science and Engineering 06, no. 03 (September 2017): 1750017. http://dx.doi.org/10.1142/s2047684117500178.
Повний текст джерелаHaku, Hisao, Katsunobu Sayama, Eiji Maruyama, Hiroshi Dohjoh, Noboru Nakamura, Shinya Tsuda, Shoichi Nakano, Yasuo Kishi, and Yukinori Kuwano. "High-Performance a-SiGe Solar Cells Using a Super Chamber Method." Japanese Journal of Applied Physics 30, Part 1, No. 11A (November 15, 1991): 2700–2704. http://dx.doi.org/10.1143/jjap.30.2700.
Повний текст джерелаSato, Shin-ichiro, Kevin Beernink, and Takeshi Ohshima. "Degradation Behavior of Flexible a-Si/a-SiGe/a-SiGe Triple-Junction Solar Cells Irradiated With Protons." IEEE Journal of Photovoltaics 3, no. 4 (October 2013): 1415–22. http://dx.doi.org/10.1109/jphotov.2013.2271672.
Повний текст джерелаAZEDDINE, B., A. TALHI, and K. HAMI. "PERFORMANCE OF SIGE SOLAR CELL WITH BSF LAYER EFFECT OF TEMPERATURE AND WINDOW LAYER." Journal of Ovonic Research 16, no. 3 (May 2020): 147–50. http://dx.doi.org/10.15251/jor.2020.163.147.
Повний текст джерелаWang, Li, Martin Diaz, Brianna Conrad, Xin Zhao, Dun Li, Anastasia Soeriyadi, Andrew Gerger, et al. "Material and Device Improvement of GaAsP Top Solar Cells for GaAsP/SiGe Tandem Solar Cells Grown on Si Substrates." IEEE Journal of Photovoltaics 5, no. 6 (November 2015): 1800–1804. http://dx.doi.org/10.1109/jphotov.2015.2459918.
Повний текст джерелаXu, Xixiang, Jinyan Zhang, Anhong Hu, Cao Yu, Minghao Qu, Changtao Peng, Xiaoning Ru, et al. "Development of Nanocrystalline Silicon Based Multi-junction Solar Cell Technology for High Volume Manufacturing." MRS Proceedings 1536 (2013): 57–62. http://dx.doi.org/10.1557/opl.2013.738.
Повний текст джерелаFan, Qi Hua, Xianbo Liao, Xianbi Xiang, Changyong Chen, Guofu Hou, Xinmin Cao, and Xunming Deng. "Simulation of a-Si/a-SiGe thin film tandem junction solar cells." Journal of Physics D: Applied Physics 43, no. 14 (March 23, 2010): 145101. http://dx.doi.org/10.1088/0022-3727/43/14/145101.
Повний текст джерелаFaucher, J., A. Gerger, S. Tomasulo, C. Ebert, A. Lochtefeld, A. Barnett, and M. L. Lee. "Single-junction GaAsP solar cells grown on SiGe graded buffers on Si." Applied Physics Letters 103, no. 19 (November 4, 2013): 191901. http://dx.doi.org/10.1063/1.4828879.
Повний текст джерелаOkamoto, Shingo, Eiji Maruyama, Akira Terakawa, Wataru Shinohara, Shingo Nakano, Yoshihiro Hishikawa, Kenichiro Wakisaka, and Seiichi Kiyama. "Towards large-area, high-efficiency a-Si/a-SiGe tandem solar cells." Solar Energy Materials and Solar Cells 66, no. 1-4 (February 2001): 85–94. http://dx.doi.org/10.1016/s0927-0248(00)00161-6.
Повний текст джерелаAissat, A., F. Benyettou, S. Nacer, and J. P. Vilcot. "Modeling and simulation of solar cells quantum well based on SiGe/Si." International Journal of Hydrogen Energy 42, no. 13 (March 2017): 8790–94. http://dx.doi.org/10.1016/j.ijhydene.2016.07.042.
Повний текст джерелаBidiville, A., T. Matsui, and M. Kondo. "Effect of oxygen doping in microcrystalline SiGe p-i-n solar cells." Journal of Applied Physics 116, no. 5 (August 7, 2014): 053701. http://dx.doi.org/10.1063/1.4891684.
Повний текст джерелаWang, Jin, Ke Tao, and Guo Feng Li. "Heteroepitaxial Growth of Ge-Rich SiGe Films on Si for Solar Cells." Advanced Materials Research 1014 (July 2014): 216–19. http://dx.doi.org/10.4028/www.scientific.net/amr.1014.216.
Повний текст джерелаZhong, Yan Kai, Sze Ming Fu, Sheng Lun Yan, Po Yu Chen, and Albert Lin. "Arbitrarily-Wide-Band Dielectric Mirrors and Their Applications to SiGe Solar Cells." IEEE Photonics Journal 7, no. 4 (August 2015): 1–12. http://dx.doi.org/10.1109/jphot.2015.2452771.
Повний текст джерелаTerakawa, Akira, Masao Isomura, and Shinya Tsuda. "Effect of optical gap on the stability of a-SiGe solar cells." Journal of Non-Crystalline Solids 198-200 (May 1996): 1097–100. http://dx.doi.org/10.1016/0022-3093(96)00053-1.
Повний текст джерелаKosarian, Abdolnabi, and Peyman Jelodarian. "Modeling and Optimization of Advanced Single- and Multijunction Solar Cells Based on Thin-Film a-Si:H/SiGe Heterostructure." ISRN Renewable Energy 2011 (December 11, 2011): 1–8. http://dx.doi.org/10.5402/2011/712872.
Повний текст джерелаSaid, K., J. Poortmans, M. Caymax, J. F. Nijs, L. Debarge, E. Christoffel, and A. Slaoui. "Design, fabrication, and analysis of crystalline Si-SiGe heterostructure thin-film solar cells." IEEE Transactions on Electron Devices 46, no. 10 (1999): 2103–10. http://dx.doi.org/10.1109/16.792004.
Повний текст джерелаOhdaira, Keisuke, Noritaka Usami, Wugen Pan, Kozo Fujiwara, and Kazuo Nakajima. "Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe." Japanese Journal of Applied Physics 44, no. 11 (November 9, 2005): 8019–22. http://dx.doi.org/10.1143/jjap.44.8019.
Повний текст джерелаCariou, R., J. Tang, N. Ramay, R. Ruggeri, and P. Roca i Cabarrocas. "Low temperature epitaxial growth of SiGe absorber for thin film heterojunction solar cells." Solar Energy Materials and Solar Cells 134 (March 2015): 15–21. http://dx.doi.org/10.1016/j.solmat.2014.11.018.
Повний текст джерелаChen, Yu-Hung, Jun-Chin Liu, Yu-Ru Chen, Je-Wei Lin, Chun-Heng Chen, Wen-Haw Lu, and Chiung-Nan Li. "Enhancing performance of amorphous SiGe single junction solar cells by post-deposition thermal annealing." Thin Solid Films 529 (February 2013): 7–9. http://dx.doi.org/10.1016/j.tsf.2012.06.019.
Повний текст джерелаUsami, Noritaka, Wugen Pan, Kozo Fujiwara, Misumi Tayanagi, Keisuke Ohdaira, and Kazuo Nakajima. "Effect of the compositional distribution on the photovoltaic power conversion of SiGe solar cells." Solar Energy Materials and Solar Cells 91, no. 2-3 (January 2007): 123–28. http://dx.doi.org/10.1016/j.solmat.2006.07.006.
Повний текст джерелаCaño, Pablo, Manuel Hinojosa, Huy Nguyen, Aled Morgan, David Fuertes Marrón, Iván García, Andrew Johnson, and Ignacio Rey-Stolle. "Hybrid III-V/SiGe solar cells grown on Si substrates through reverse graded buffers." Solar Energy Materials and Solar Cells 205 (February 2020): 110246. http://dx.doi.org/10.1016/j.solmat.2019.110246.
Повний текст джерелаXu, Zhongyang, Xuecheng Zou, Xuemei Zhou, Bofang Zhao, Changan Wang, and Y. Hamakawa. "Optimum design and preparation ofa‐Si/a‐Si/a‐SiGe triple‐junction solar cells." Journal of Applied Physics 75, no. 1 (January 1994): 588–95. http://dx.doi.org/10.1063/1.357011.
Повний текст джерелаRingel, S. A., J. A. Carlin, C. L. Andre, M. K. Hudait, M. Gonzalez, D. M. Wilt, E. B. Clark, et al. "Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers." Progress in Photovoltaics: Research and Applications 10, no. 6 (2002): 417–26. http://dx.doi.org/10.1002/pip.448.
Повний текст джерелаJelodarian, Peyman, and Abdolnabi Kosarian. "Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect." International Journal of Photoenergy 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/946024.
Повний текст джерелаNakajima, Kazuo, Noritaka Usami, Kozo Fujiwara, Yoshihiro Murakami, Toru Ujihara, Gen Sazaki, and Toetsu Shishido. "Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells." Solar Energy Materials and Solar Cells 73, no. 3 (July 2002): 305–20. http://dx.doi.org/10.1016/s0927-0248(01)00216-1.
Повний текст джерелаRault, Francis K., and Ahmad Zahedi. "Computational modelling of the reflectivity of AlGaAs/GaAs and SiGe/Si quantum well solar cells." Solar Energy Materials and Solar Cells 79, no. 4 (September 2003): 471–84. http://dx.doi.org/10.1016/s0927-0248(03)00050-3.
Повний текст джерелаXU, Z., X. ZOU, X. ZHOU, B. ZHAO, C. WANG, and Y. HAMAKAWA. "The optimum design for high efficiency a-Si/a-Si/a-SiGe tandem solar cells." Solar Energy Materials and Solar Cells 31, no. 2 (November 1993): 307–15. http://dx.doi.org/10.1016/0927-0248(93)90062-8.
Повний текст джерелаGu, Long, Hui Dong Yang, and Bo Huang. "The Effect of Plasma Power on the Properties of Amorphous Silicon-Germanium Thin Films." Advanced Materials Research 317-319 (August 2011): 341–44. http://dx.doi.org/10.4028/www.scientific.net/amr.317-319.341.
Повний текст джерелаYu, Shu-Hung, Wei Lin, Yu-Hung Chen та Chun-Yen Chang. "High Improvement in Conversion Efficiency of μc-SiGe Thin-Film Solar Cells with Field-Enhancement Layers". International Journal of Photoenergy 2012 (2012): 1–5. http://dx.doi.org/10.1155/2012/817825.
Повний текст джерелаUsami, Noritaka, Kozo Fujiwara, Wugen Pan, and Kazuo Nakajima. "On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution." Japanese Journal of Applied Physics 44, no. 2 (February 8, 2005): 857–60. http://dx.doi.org/10.1143/jjap.44.857.
Повний текст джерелаYue, Guozhen, Xunming Deng, G. Ganguly, and Daxing Han. "Electro- and photo-luminescence spectra from a-Si:H and a-SiGe p–i–n solar cells." Journal of Non-Crystalline Solids 266-269 (May 2000): 1119–23. http://dx.doi.org/10.1016/s0022-3093(99)00914-x.
Повний текст джерелаPan, Wugen, Kozo Fujiwara, Noritaka Usami, Toru Ujihara, Kazuo Nakajima, and Ryuichi Shimokawa. "Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution." Journal of Applied Physics 96, no. 2 (July 15, 2004): 1238–41. http://dx.doi.org/10.1063/1.1763227.
Повний текст джерелаLiou, J. J. "Physical models for predicting the performance of Si/Si, AlGaAs/GaAs, and Si/SiGe solar cells." Solar Energy Materials and Solar Cells 29, no. 3 (April 1993): 261–76. http://dx.doi.org/10.1016/0927-0248(93)90041-z.
Повний текст джерелаHegedus, Steven S. "Current–Voltage Analysis of a-Si and a-SiGe Solar Cells Including Voltage-dependent Photocurrent Collection." Progress in Photovoltaics: Research and Applications 5, no. 3 (May 1997): 151–68. http://dx.doi.org/10.1002/(sici)1099-159x(199705/06)5:3<151::aid-pip167>3.0.co;2-w.
Повний текст джерелаBELHADJ, M., and B. DENNAI. "STUDY OF A SOLAR CELL WITH A MULTILAYERED WINDOW BASED ON Si1-xGex USING AMPS-1D." Journal of Ovonic Research 16, no. 3 (May 2020): 151–57. http://dx.doi.org/10.15251/jor.2020.163.151.
Повний текст джерелаAli, Khuram, and Zohaib Ali. "Analytical study of electrical performance of SiGe-based n-p-p solar cells with BaSi2 BSF structure." Solar Energy 225 (September 2021): 91–96. http://dx.doi.org/10.1016/j.solener.2021.07.027.
Повний текст джерелаBaidakova, N. A., V. A. Verbus, E. E. Morozova, A. V. Novikov, E. V. Skorohodov, M. V. Shaleev, D. V. Yurasov, A. Hombe, Y. Kurokawa, and N. Usami. "Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells." Semiconductors 51, no. 12 (December 2017): 1542–46. http://dx.doi.org/10.1134/s1063782617120028.
Повний текст джерелаLueck, M. R., C. L. Andre, A. J. Pitera, M. L. Lee, E. A. Fitzgerald, and S. A. Ringel. "Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage." IEEE Electron Device Letters 27, no. 3 (March 2006): 142–44. http://dx.doi.org/10.1109/led.2006.870250.
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