Статті в журналах з теми "SiC thin film"
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Nagai, T., and M. Itoh. "SiC thin-film thermistors." IEEE Transactions on Industry Applications 26, no. 6 (1990): 1139–43. http://dx.doi.org/10.1109/28.62400.
Повний текст джерелаNagai, Takeshi, Kazushi Yamamoto, and Ikuo Kobayashi. "SiC thin film thermistor." Thin Solid Films 125, no. 3-4 (March 1985): 355–59. http://dx.doi.org/10.1016/0040-6090(85)90244-5.
Повний текст джерелаJiao, Zong Lei, and Jian Zhu. "Study of SiC’s Mechanical Property Variance Caused by Film Thickness." Key Engineering Materials 645-646 (May 2015): 400–404. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.400.
Повний текст джерелаNutt, S. R., та David J. Smith. "High-resolution TEM of thin-film β-SiC interfaces". Proceedings, annual meeting, Electron Microscopy Society of America 44 (серпень 1986): 408–9. http://dx.doi.org/10.1017/s0424820100143638.
Повний текст джерелаMarsi, Noraini, Majlis Burhanuddin Yeop, Azrul Azlan Hamzah, and Faisal Mohd-Yasin. "Growth and Characterization of (100) and (111) 3C-SiC Thin Film for MEMS Capacitive Pressure Sensor for Extreme Environments." Advanced Materials Research 1024 (August 2014): 356–59. http://dx.doi.org/10.4028/www.scientific.net/amr.1024.356.
Повний текст джерелаHeimann, D., T. Wagner, J. Bill, F. Aldinger та F. F. Lange. "Epitaxial growth of β–SiC thin films on a 6H–SiC substrate using the chemical solution deposition method". Journal of Materials Research 12, № 11 (листопад 1997): 3099–101. http://dx.doi.org/10.1557/jmr.1997.0403.
Повний текст джерелаSankin, A. V., V. I. Altukhov, and Z. I. Dadasheva. "Thin SiC and Gan-Based Films and Structures: Production and Properties." Key Engineering Materials 909 (February 4, 2022): 156–61. http://dx.doi.org/10.4028/p-uvvw11.
Повний текст джерелаWang, Li, Sima Dimitrijev, Glenn Walker, Ji Sheng Han, Alan Iacopi, Philip Tanner, Leonie Hold, Yu Zhao, and Francesca Iacopi. "Color Chart for Thin SiC Films Grown on Si Substrates." Materials Science Forum 740-742 (January 2013): 279–82. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.279.
Повний текст джерелаČtvrtlík, Radim, Jan Tomastik, and Petr Schovánek. "High Temperature Nanoindentation Testing of Amorphous SiC and B4C Thin Films." Defect and Diffusion Forum 368 (July 2016): 115–18. http://dx.doi.org/10.4028/www.scientific.net/ddf.368.115.
Повний текст джерелаAlisha, P. Chander, V. K. Malik, and R. Chandra. "Structural and Electrical Transport Properties of Sputter-Deposited SiC Thin Films." Journal of Physics: Conference Series 2518, no. 1 (June 1, 2023): 012016. http://dx.doi.org/10.1088/1742-6596/2518/1/012016.
Повний текст джерелаJin, C. G., X. M. Wu, and L. J. Zhuge. "Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition." Research Letters in Physical Chemistry 2008 (April 3, 2008): 1–5. http://dx.doi.org/10.1155/2008/760650.
Повний текст джерелаMuhanad A. Ahmed, Mohammed F. Mohammed Sabri, and Wathiq R. Abed. "The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition." ARO-THE SCIENTIFIC JOURNAL OF KOYA UNIVERSITY 9, no. 2 (November 10, 2021): 46–50. http://dx.doi.org/10.14500/aro.10852.
Повний текст джерелаEndrino, Jose L., and James E. Krzanowski. "Nanostructure and mechanical properties of WC–SiC thin films." Journal of Materials Research 17, no. 12 (December 2002): 3163–67. http://dx.doi.org/10.1557/jmr.2002.0457.
Повний текст джерелаZhao, Chang, Man Zhao, Su Ye Lv, Qing Jun Liu, and Guang Jian Xing. "The Photoluminescence Spectra Research of SiC Thin Film under Different Sputtering Powers." Solid State Phenomena 295 (August 2019): 93–97. http://dx.doi.org/10.4028/www.scientific.net/ssp.295.93.
Повний текст джерелаCheng, Xiankun, Qiang Gao, Kaifeng Li, Zhongliang Liu, Qinzhuang Liu, Qiangchun Liu, Yongxing Zhang, and Bing Li. "Enhanced Phase Transition Properties of VO2 Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition." Nanomaterials 9, no. 8 (July 24, 2019): 1061. http://dx.doi.org/10.3390/nano9081061.
Повний текст джерелаFerro, Gabriel, D. Panknin, Efstathios K. Polychroniadis, Yves Monteil, Wolfgang Skorupa, and J. Stoemenos. "Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase Epitaxy." Materials Science Forum 483-485 (May 2005): 295–98. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.295.
Повний текст джерелаDai, Qian, Ruo Run Ma, Qing Rong Feng, Huai Zhang, Qian Qian Yang, Rui Juan Nie, and Fu Ren Wang. "Preparing Ultrathin MgB2 Thin Film by Ex Situ Annealing of Mg-B Precursor Film." Materials Science Forum 745-746 (February 2013): 249–54. http://dx.doi.org/10.4028/www.scientific.net/msf.745-746.249.
Повний текст джерелаLi, Yang Yang, Jun Jie Hao, Xiao Jia Wang, Rui Xin Wang, and Zhi Meng Guo. "The Study of Microstructure and Electric Resistivity of SiC Thin Films Produced by MF Magnetron Sputtering." Advanced Materials Research 567 (September 2012): 158–61. http://dx.doi.org/10.4028/www.scientific.net/amr.567.158.
Повний текст джерелаWu, Jing, Xiaofeng Zhao, Chunpeng Ai, Zhipeng Yu, and Dianzhong Wen. "The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering." International Journal of Modern Physics B 33, no. 15 (June 20, 2019): 1950152. http://dx.doi.org/10.1142/s0217979219501522.
Повний текст джерелаPortail, Marc, Eric Frayssinet, Adrien Michon, Stéphanie Rennesson, Fabrice Semond, Aimeric Courville, Marcin Zielinski, et al. "CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth." Crystals 12, no. 11 (November 10, 2022): 1605. http://dx.doi.org/10.3390/cryst12111605.
Повний текст джерелаChiu, Chien C., Seshu B. Desu, Gang Chen, Ching Yi Tsai та William T. Reynolds. "Deposition of epitaxial β–SiC films on porous Si(100) from MTS in a hot wall LPCVD reactor". Journal of Materials Research 10, № 5 (травень 1995): 1099–107. http://dx.doi.org/10.1557/jmr.1995.1099.
Повний текст джерелаLee, Byung-Teak, Yang-Soo Shin, and Jin Hyeok Kim. "High-temperature interfacial reaction of an Al thin film with single-crystal 6H–SiC." Journal of Materials Research 15, no. 11 (November 2000): 2284–87. http://dx.doi.org/10.1557/jmr.2000.0327.
Повний текст джерелаEl Khakani, M. A., M. Chaker, A. Jean, S. Boily, J. C. Kieffer, M. E. O'Hern, M. F. Ravet, and F. Rousseaux. "Hardness and Young's modulus of amorphous a-SiC thin films determined by nanoindentation and bulge tests." Journal of Materials Research 9, no. 1 (January 1994): 96–103. http://dx.doi.org/10.1557/jmr.1994.0096.
Повний текст джерелаLoboda, M. J., and M. K. Ferber. "Characterization of the mechanical properties of a–SiC: H films." Journal of Materials Research 8, no. 11 (November 1993): 2908–15. http://dx.doi.org/10.1557/jmr.1993.2908.
Повний текст джерелаHwang, J. D., Y. K. Fang, and T. Y. Tsai. "A vertical submicron SiC thin film transistor." Solid-State Electronics 38, no. 2 (February 1995): 275–78. http://dx.doi.org/10.1016/0038-1101(94)00120-5.
Повний текст джерелаLu, Y. M., та M. H. Hon. "Microstructure in CVD β-SiC thin film". Scripta Metallurgica et Materialia 25, № 9 (вересень 1991): 2199–201. http://dx.doi.org/10.1016/0956-716x(91)90299-g.
Повний текст джерелаSu, Jianing, Ying Yang, Xuhui Zhang, Hao Wang, and Longxiang Zhu. "Sulfur passivation of 3C-SiC thin film." Journal of Crystal Growth 505 (January 2019): 15–18. http://dx.doi.org/10.1016/j.jcrysgro.2018.09.025.
Повний текст джерелаThompson, Margarita P., Andrew R. Drews, Changhe Huang, and Gregory W. Auner. "Temperature Effect on the Quality of A1N thin Films." MRS Internet Journal of Nitride Semiconductor Research 4, S1 (1999): 142–48. http://dx.doi.org/10.1557/s1092578300002362.
Повний текст джерелаKong, H. S., Y. C. Wang, J. T. Glass та R. F. Davis. "The effect of off-axis Si (100) substrates on the defect structure and electrical properties of β-SiC thin films". Journal of Materials Research 3, № 3 (червень 1988): 521–30. http://dx.doi.org/10.1557/jmr.1988.0521.
Повний текст джерелаAlbert Alim, Emilly, Muhammad Firdaus Omar, and Abd Khamim Ismail. "Luminescent Properties of SiC Thin Film Deposited by VHF-PECVD: Effect of Methane Flow Rate." Solid State Phenomena 268 (October 2017): 239–43. http://dx.doi.org/10.4028/www.scientific.net/ssp.268.239.
Повний текст джерелаChaudhuri, J., R. Thokala, J. H. Edgar, and B. S. Sywe. "Characterization Of Single Crystal Epitaxial Aluminum Nitride Thin Films On Sapphire, Silicon Carbide And Silicon Substrates By X-Ray Double Crystal Diffractometry And Transmission Electron Microscopy." Advances in X-ray Analysis 39 (1995): 645–51. http://dx.doi.org/10.1154/s0376030800023077.
Повний текст джерелаVladoiu, Rodica, Aurelia Mandes, Mirela Contulov, Virginia Dinca, and Corneliu Porosnicu. "Investigation of Composition-Properties’ Relations on Silicon and Carbon Based Nanomaterials." Advanced Materials Research 816-817 (September 2013): 232–36. http://dx.doi.org/10.4028/www.scientific.net/amr.816-817.232.
Повний текст джерелаLee, B.-T., D.-K. Kim, C.-K. Moon, J. K. Kim, Y. H. Seo, K. S. Nahm, H. J. Lee, et al. "Microstructural investigation of low temperature chemical vapor deposited 3C-SiC/Si thin films using single-source precursors." Journal of Materials Research 14, no. 1 (January 1999): 24–28. http://dx.doi.org/10.1557/jmr.1999.0006.
Повний текст джерелаMishra, Pratima K., and Bijayalaxmi Sahoo. "Growth of amorphous carbon and graphene on pulse laser deposited SiC films and their characterization studies." Laser and Particle Beams 31, no. 1 (December 12, 2012): 63–71. http://dx.doi.org/10.1017/s0263034612000894.
Повний текст джерелаGalashev, Alexander, and Ksenia Abramova. "Molecular Dynamics Simulation of Thin Silicon Carbide Films Formation by the Electrolytic Method." Materials 16, no. 8 (April 15, 2023): 3115. http://dx.doi.org/10.3390/ma16083115.
Повний текст джерелаSano, Hideaki, Hajime Karasuyama, Guo Bin Zheng, and Yasuo Uchiyama. "Kinetics of the SiC Formation from Carbon Thin Film and SiO Gas." Materials Science Forum 510-511 (March 2006): 930–33. http://dx.doi.org/10.4028/www.scientific.net/msf.510-511.930.
Повний текст джерелаBeshkova, M., B. S. Blagoev, V. Mehandzhiev, R. Yakimova, B. Georgieva, I. Avramova, P. Terziyska, and V. Strijkova. "Morphological evolution of thin AlN films grown by atomic layer deposition." Journal of Physics: Conference Series 2240, no. 1 (March 1, 2022): 012005. http://dx.doi.org/10.1088/1742-6596/2240/1/012005.
Повний текст джерелаSugawara, Y., N. Shibata, S. Hara, and Y. Ikuhara. "Interface structure of face-centered-cubic-Ti thin film grown on 6H–SiC substrate." Journal of Materials Research 15, no. 10 (October 2000): 2121–24. http://dx.doi.org/10.1557/jmr.2000.0305.
Повний текст джерелаGordienko, S. O., A. Nazarov, A. V. Rusavsky, A. V. Vasin, N. Rymarenko, V. G. Stepanov, T. M. Nazarova, and V. S. Lysenko. "Influence of Hydrogen Plasma Treatment on a-SiC Resistivity of the SiC/SiO2/Si Structures." Advanced Materials Research 276 (July 2011): 21–25. http://dx.doi.org/10.4028/www.scientific.net/amr.276.21.
Повний текст джерелаBaskurt, Erdem, Tolga Tavşanoğlu, and Yücel Onüralp. "Effect of Methane Flow Rate on the Microstructural and Mechanical Properties of Silicon Carbide Thin Films Deposited by Reactive DC Magnetron Sputtering." Advances in Science and Technology 66 (October 2010): 35–40. http://dx.doi.org/10.4028/www.scientific.net/ast.66.35.
Повний текст джерелаTanaka, Shun Ichiro, and Chihiro Iwamoto. "Nanoscale Dynamics at Reactive Wetting Front on SiC." Materials Science Forum 502 (December 2005): 269–74. http://dx.doi.org/10.4028/www.scientific.net/msf.502.269.
Повний текст джерелаMoon, C. K., H. J. Song, J. K. Kim, J. H. Park, S. J. Jang, J.-B. Yoo, H.-R. Park, and Byung-Teak Lee. "Chemical-vapor-deposition growth and characterization of epitaxial 3C–SiC films on SOI substrates with thin silicon top layers." Journal of Materials Research 16, no. 1 (January 2001): 24–27. http://dx.doi.org/10.1557/jmr.2001.0007.
Повний текст джерелаTrinchi, A., W. Wlodarski, Sandro Santucci, D. Di Claudio, Maurizio Passacantando, C. Cantalini, B. Rout, S. J. Ippolito, K. Kalantar-Zadeh, and G. Sberveglieri. "Microstructural Characterisation of RF Magnetron Sputtered ZnO Thin Films on SiC." Solid State Phenomena 99-100 (July 2004): 123–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.99-100.123.
Повний текст джерелаKimura, Yutaroh, Xia Zhu, Hiromichi Toyota, Ryoya Shiraishi, Yukiharu Iwamoto, and Shinfuku Nomura. "Effect of Amorphous Silicon Carbide Interlayer on Diamond-Like Carbon Film Structure and Film Hardness." Key Engineering Materials 825 (October 2019): 99–105. http://dx.doi.org/10.4028/www.scientific.net/kem.825.99.
Повний текст джерелаChung, Gwiy-Sang, and Jeong-Hak Ahn. "Electrical characteristics of polycrystalline 3C-SiC thin film diodes." Journal of Sensor Science and Technology 16, no. 4 (July 31, 2007): 259–62. http://dx.doi.org/10.5369/jsst.2007.16.4.259.
Повний текст джерелаOh, Chulmin, Shijo Nagao, Tohru Sugahara, and Katsuaki Suganuma. "Pressureless Ag Thin-Film Die-Attach for SiC Devices." Materials Science Forum 821-823 (June 2015): 919–22. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.919.
Повний текст джерелаYi, Jian, XiaoDong He, Yue Sun, and Yao Li. "Optical properties of SIC/SIO2 composite thin film." Microwave and Optical Technology Letters 49, no. 7 (2007): 1551–53. http://dx.doi.org/10.1002/mop.22487.
Повний текст джерелаGeffroy, Pierre Marie, Jean François Silvain, and Thierry Chartier. "Elaboration by Tape Casting and Hot Rolling of Copper/Silicon Carbide Composite Thin Films for Microelectronic Applications." Materials Science Forum 534-536 (January 2007): 881–84. http://dx.doi.org/10.4028/www.scientific.net/msf.534-536.881.
Повний текст джерелаAnzalone, Ruggero, Massimo Camarda, Andrea Severino, Nicolo’ Piluso, and Francesco La Via. "Curvature Evaluation of Si/3C-SiC/Si Hetero-Structure Grown by Chemical Vapor Deposition." Materials Science Forum 778-780 (February 2014): 255–58. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.255.
Повний текст джерелаZhao, Yong Mei, Guo Sheng Sun, Xing Fang Liu, Jia Ye Li, Wan Shun Zhao, L. Wang, Jin Min Li, and Yi Ping Zeng. "Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer." Materials Science Forum 600-603 (September 2008): 251–54. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.251.
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