Дисертації з теми "SiC thin film"
Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями
Ознайомтеся з топ-50 дисертацій для дослідження на тему "SiC thin film".
Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.
Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.
Переглядайте дисертації для різних дисциплін та оформлюйте правильно вашу бібліографію.
Ma, Yunfei. "Micromagentic [sic] study of magnetoeleastic materials /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/7068.
Повний текст джерелаWang, Feng. "Surface/interface modification and characterization of C-face epitaxial graphene." Diss., Georgia Institute of Technology, 2015. http://hdl.handle.net/1853/53855.
Повний текст джерелаLi, Xuebin. "Epitaxial graphene films on SiC : growth, characterization, and devices /." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/24670.
Повний текст джерелаCommittee Chair: de Heer, Walter; Committee Member: Chou, Mei-Yin; Committee Member: First, Phillip; Committee Member: Meindl, James; Committee Member: Orlando, Thomas
Saifaddin, Burhan Khalid. "Development of Deep Ultraviolet (UV-C) Thin-Film Light-Emitting Diodes Grown on SiC." Thesis, University of California, Santa Barbara, 2019. http://pqdtopen.proquest.com/#viewpdf?dispub=10975858.
Повний текст джерелаUV-C LEDs in the range of 265–280 nm are needed to develop new disinfection and biotechnology applications. The market share for UV-C LED, versus UV-C lamps (Hg discharge and Xe), increased from 8% in 2008 ($240M) to 25% in 2018 ($810M). However, while low-pressure mercury lamps are ~30% energy efficient, the best commercial UV-C LEDs in the 265–280 nm range are ~2% energy efficient; InGaN blue LEDs are 80% energy efficient. Research on AlGaN LEDs has made significant progress into AlGaN material quality (including threading dislocation density and n-AlGaN electrical conductivity) but has lagged regarding light extraction efficiency. Light extraction from UV LEDs is limited by p-GaN absorption because of the lack of p-contact to p-AlGaN with AlN fraction (AlN content > 50%). Furthermore, AlGaN emitters at the 265–280 nm range emit 40–50% of their emissions as transverse magnetic (TM) waves, which are harder to extract than transverse electric (TE) waves.
SiC is an absorbing substrate that has been largely overlooked in developing UV-C LEDs, even though it has a small lattice mismatch with AlN (~1%) and a similar Wurtzite crystal structure and is more chemically stable. We demonstrate the first lateral thin-film flip-chip (TFFC) ultraviolet (UV) light-emitting diodes grown on SiC. UV LEDs were made at 310 nm, 298 nm, 278 nm, and 265 nm.
In this dissertation, we discuss the design, epi development, and fabrication of TFFC AlGaN LEDs with reflective p-contacts. The AlGaN:Mg growth temperature and the Mg doping profile in AlGaN:Mg were found to significantly impact the electroluminescence (EL) efficiency of the AlGaN MQWs. KOH roughening enhanced the light-extraction efficiency (LEE) by 100% and by ~180–200% for UV LEDs with 10 nm p-GaN and 5 nm p-GaN, respectively, without affecting the devices’ IV characteristics. The thin-film architecture led to a high LEE of about ~28–30% without LED encapsulation when used with LEDs with 5 nm p-GaN. The best light extraction efficiency in the literature is ~24% (without LED encapsulation) for a 275 nm flip-chip LED grown on PSS sapphire substrate. KOH roughening of AlN is discussed and is compared to KOH roughening of N-Face GaN. To advance LEE further, we attempted to develop LEDs with transparent current n-AlGaN spreading layers as well as highly doped n+-AlGaN tunnel junctions on top of UV-C LEDs. Reflective and ohmic n-contacts with low resistivities were developed for the n-Al.58Ga.42N regrown by MBE. Furthermore, a highly reflective MgF2/Al omnidirectional mirror was developed, which can be used with n-contact microgrid to further enhance the LEE in UV-C LEDs with a transparent tunnel junction.
Karnick, David A. "Miniaturization of Folded Slot Antennas through Inductive Loading and Thin Film Packaging." Case Western Reserve University School of Graduate Studies / OhioLINK, 2011. http://rave.ohiolink.edu/etdc/view?acc_num=case1295549545.
Повний текст джерелаTengdelius, Lina. "Growth and Characterization of ZrB2 Thin Films." Licentiate thesis, Linköpings universitet, Tunnfilmsfysik, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-98308.
Повний текст джерелаThabethe, Thabsile Theodora. "The interfacial reaction and analysis of W thin film on 6H-SiC annealed in vacuum, hydrogen and argon." Thesis, University of Pretoria, 2017. http://hdl.handle.net/2263/65018.
Повний текст джерелаThesis (PhD)--University of Pretoria, 2017.
NRF Free-standing-Innovation Doctoral Scholarships
Physics
PhD
Unrestricted
Baran, Andre. "Chemical bath deposited zinc cadmium sulfide and sputter deposted [sic] zinc oxide for thin film solar cell device fabrication." [Gainesville, Fla.] : University of Florida, 2009. http://purl.fcla.edu/fcla/etd/UFE0022644.
Повний текст джерелаShelberg, Daniel Thomas. "PHYSICAL AND CHEMICAL PROPERTIES OF AMBIENT TEMPERATURE SPUTTERED SILICON CARBIDE FILMS." Cleveland, Ohio : Case Western Reserve University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=case1269963941.
Повний текст джерелаDepartment of Chemical Engineering Title from PDF (viewed on 2010-05-25) Includes abstract Includes bibliographical references and appendices Available online via the OhioLINK ETD Center
Da, Conceicao Lorenzzi Jean Carlos. "Growth and doping of heteroepitaxial 3C-SiC layers on α-SiC substrates using Vapour-Liquid-Solid mechanism". Thesis, Lyon 1, 2010. http://www.theses.fr/2010LYO10179.
Повний текст джерелаRecently, the use of an original growth approach based on vapour-liquid-solid (VLS) mechanism with Ge-Si melts has led to significant improvement of the crystalline quality of the 3C-SiC thin layers heteroepitaxially grown on α-SiC(0001) substrate. This work tries to deepen the knowledge of such specific growth method, to improve the process and to determine the properties of the grown material. The first part was dedicated to the understanding and mastering of the various mechanisms involved in 3C-SiC growth by VLS mechanism. This led to the determination of the parameters limiting sample size and the demonstration of the benefits of using 50 at% Ge instead of 75 at% Ge melts. A study of lateral enlargement on patterned substrates gave some interesting hints which can be integrated in the model of twin defect elimination. The incorporation of non intentional and intentional n- and p-type dopants during VLS growth was studied. For n-type doping, a clear link between N impurity and 3C polytype stability was demonstrated. Besides, high purity layers with residual n-type doping below 1x1017 cm-3 were achieved. For p-type doping, the best element was shown to be Al and not Ga, even if it has to be alloyed with Ge-Si melts to avoid homoepitaxial growth. Finally, these layers were characterised by several optical and electrical means like Raman spectroscopy, low temperature photoluminescence, deep leveltransient spectroscopy and MOS capacitors measurements. Very low concentrationsof fixed oxide charges estimated about 7×109 cm-2 and interface states densities Dit equal to 1.2×1010 cm-2eV-1at 0.63 eV below the conduction band have been achieved. These record values are a very good base toward 3C-SiC MOSFET
Deva, Reddy Jayadeep. "Mechanical properties of Silicon Carbide (SiC) thin films." [Tampa, Fla] : University of South Florida, 2008. http://purl.fcla.edu/usf/dc/et/SFE0002615.
Повний текст джерелаDeva, Reddy Jayadeep. "Mechanical Properties of Silicon Carbide (SiC) Thin Films." Scholar Commons, 2007. https://scholarcommons.usf.edu/etd/210.
Повний текст джерелаRaghavan, Srikanth. "Comparative studies of 6H-SiC surface preparation." Morgantown, W. Va. : [West Virginia University Libraries], 2008. https://eidr.wvu.edu/etd/documentdata.eTD?documentid=5766.
Повний текст джерелаTitle from document title page. Document formatted into pages; contains xii, 56 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 51-53).
Inoue, Shinichiro. "Ion assisted methods of deposition of SiC." Thesis, University of Salford, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.308174.
Повний текст джерелаAhmed, Fatema. "Structural properties and optical modelling of SiC thin films." University of the Western Cape, 2020. http://hdl.handle.net/11394/7284.
Повний текст джерелаAmorphous silicon carbide (a-SiC) is a versatile material due to its interesting mechanical, chemical and optical properties that make it a candidate for application in solar cell technology. As a-SiC stoichiometry can be tuned over a large range, consequently is its bandgap. In this thesis, amorphous silicon carbide thin films for solar cells application have been deposited by means of the electron-beam physical vapour deposition (e-beam PVD) technique and have been isochronally annealed at varying temperatures. The structural and optical properties of the films have been investigated by Fourier transform Infrared and Raman spectroscopies, X-ray diffraction, Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy and UV-VIS-NIR spectroscopy. The effect of annealing is a gradual crystallization of the amorphous network of as-deposited silicon carbide films and consequently the microstructural and optical properties are altered. We showed that the microstructural changes of the as-deposited films depend on the annealing temperature. High temperature enhances the growth of Si and SiC nanocrystals in amorphous SiC matrix. Improved stoichiometry of SiC comes with high band gap of the material up to 2.53 eV which makes the films transparent to the visible radiation and thus they can be applied as window layer in solar cells.
Li, Zhiying. "Microbridge tests on galium[sic] nitride and parylene-c thin films /." View abstract or full-text, 2010. http://library.ust.hk/cgi/db/thesis.pl?MECH%202010%20LI.
Повний текст джерелаChen, Lin. "SiC Thin-Films on Insulating Substrates for Robust MEMS-Applications." University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1053095076.
Повний текст джерелаCheng, Lin. "SiC thin-films on insulating substrates for robust MEMS applications." Cincinnati, Ohio : University of Cincinnati, 2003. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=ucin1053095076.
Повний текст джерелаCarballo, Jose M. "Residual Stress Analysis in 3C-SiC Thin Films by Substrate Curvature Method." Scholar Commons, 2010. https://scholarcommons.usf.edu/etd/1590.
Повний текст джерелаRichards, Mark Rowse. "Process development for IrAl coated SiC-C functionally graded material for the oxidation protection of graphite /." Thesis, Connect to this title online; UW restricted, 1996. http://hdl.handle.net/1773/10574.
Повний текст джерелаVandersand, James Dennis. "Growth of 6H-SiC homoepitaxy on substrates off-cut between the [01-10] planes." Master's thesis, Mississippi State : Mississippi State University, 2002. http://library.msstate.edu/etd/show.asp?etd=etd-11072002-095154.
Повний текст джерелаChiu, Chienchia. "Chemical vapor deposition of β-SiC thin films on Si(100) in a hot wall reactor". Diss., Virginia Tech, 1994. http://hdl.handle.net/10919/38661.
Повний текст джерелаHanigofsky, John. "Modeling of the chemical vapor deposition of YBa₂Cu₃O, TiB₂, and SiC thin films onto continuous ceramic tows." Diss., Georgia Institute of Technology, 1992. http://hdl.handle.net/1853/36210.
Повний текст джерелаRawlinson, Patrick Theodore. "The Mechanical Properties of Submicron-Thick, Large-Area 3C-SiC Diaphragms." Case Western Reserve University School of Graduate Studies / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=case1328296558.
Повний текст джерелаTumakha, Serhii. "Investigation of 4H and 6H-SIC thin films and schottky diodes using depth-dependent cathodoluminescence spectroscopy." The Ohio State University, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=osu1138202968.
Повний текст джерелаGuerra, Torres Jorge Andrés. "Optical characterization and thermal activation of Tb doped amorphous SiC, AlN and SiN thin films." Doctoral thesis, Pontificia Universidad Católica del Perú, 2017. http://tesis.pucp.edu.pe/repositorio/handle/123456789/9187.
Повний текст джерелаIn the present thesis the optical properties and light emission features of Tb-doped amorphous AlN, SiN and SiC:H thin films are assessed. The optical characterization is focused in the determination of the bandgap, Urbach energy and Urbach focus from optical measurements. A model, based on thermal band-fluctuations, to describe the fundamental absorption overlapped with Urbach tails is developed. Thenceforth, an analysis of the existence and meaning of the Urbach focus is performed and contrasted with the latter model. One of the main results in this part is the capability of aforementioned model to distinguish the Urbach and Tauc regions of the absorption coefficient. In this matter, a-SiC:H thin films grown with distinct hydrogen dilution conditions exhibited an uncorrelated bandgap with the Urbach energy when using this model, contrary to what is typically observed after applying the Tauc model. The light emission features analysis is concerned with the thermal activation process that rare earth ions suffer when annealing the samples. The effect of the annealing temperature, sample temperature and rare earth concentration on the light emission intensity is assessed under photon and electron excitation sources. A rate equation model is used to fit the overall Tb-related intensity of a-SiC:H:Tb3+ versus the Tb concentration after different annealing temperatures. An activation energy associated to the thermal activation is recovered. Finally, in the case of a-SiC:H:Tb3+ a diminution of the concentration quenching effect is observed suggesting an additional mechanism to enhance the Tb-related light emission intensity.
In dieser Arbeit werden die optischen Eigenschaften und die Lichtemission der dünnen amorphen Schichten AlN, SiN und SiC:H dotiert mit Tb untersucht. Die optische Charakterisierung beschränkt sich auf die Bestimmung der Bandlücke, der Urbachenergie und den Urbachfokus. Basierend auf thermischen Fluktuationen der Bandlücke wird ein Modell entwickelt, welches die fundamentale Absorption in Überlapp mit den Urbachausläufern beschreibt. Es wird die Existenz und die Bedeutung des Urbachfokus analysiert und mit dem vorher entwickelten Modell verglichen. Eine der wichtigsten Ergebnisse dieser Untersuchungen ist die Fähigkeit dieses Modells, den Urbach-Bereich von dem Tauc-Bereich des Abrorptionskoeffizienten zu trennen. Zum Beispiel zeigen dünne Filme aus SiC:H abgeschieden mit unterschiedlichen Wasserstoffflüssen unter Verwendung dieses Modells eine Bandlücke, die nicht mit der Urbach-Energie korreliert ist. Dies unterscheidet sich typischerweise von der Beobachtung der Bandlückenvariation unter Verwendung des Tauc-Modells. Die Untersuchung der Lichtemission konzentriert sich auf den Prozess der thermischen Aktivierung, welchen die Seltenerdionen bei Ausheilung der Proben erleiden. Der Effekt der Ausheiltemperatur, der Probentemperatur und der Konzentration der Seltenen Erden auf die Intensität der Lichtemission wird mit Anregung von Photonen und Elektronen untersucht. Es wird ein Änderungsratenmodell der Übergänge verwendet, um die globale mit Tb assoziierte Lichtemission der dünnen a-SiC:H:Tb3+, Schichten in Abhängigkeit von der Konzentration by verschiedenen Ausheiltemperaturen zu modellieren. Es konnte eine Aktivierungsenergie der thermischen Aktivierung bestimmt werden. Zuletzt beobachtet man im Falle von a-SiC:H:Tb3+ eine Verminderung der Unterdrückung der Konzentration, welches ein Hinweis darauf ist, dass ein zusätzlicher Mechanismus für die Erhöhung der Lichtemission mit der Tb Konzentration verantwortlich ist.
Tesis
Ullah, Syed Shihab. "Solution Processing Electronics Using Si6 H12 Inks: Poly-Si TFTs and Co-Si MOS Capacitors." Thesis, North Dakota State University, 2011. https://hdl.handle.net/10365/28902.
Повний текст джерелаVijayakumar, Arun. "INVESTIGATION OF REACTIVELY SPUTTERED SILICON CARBON BORON NITRIDE (SiCBN) THIN FILMS FOR HIGH TEMPERATURE APPLICATIONS." Doctoral diss., University of Central Florida, 2007. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/2143.
Повний текст джерелаPh.D.
School of Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering PhD
Todi, Ravi. "INVESTIGATIONS ON RF SPUTTER DEPOSITED SICN THIN FILMS FOR MEMS APPLICATIONS." Master's thesis, University of Central Florida, 2005. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/3330.
Повний текст джерелаM.S.M.E.
Department of Mechanical, Materials and Aerospace Engineering;
Engineering and Computer Science
Mechanical Engineering
Short, Eugene L. III. "Sequential Afterglow Processing and Non-Contact Corona-Kelvin Metrology of 4H-SiC." Scholar Commons, 2009. https://scholarcommons.usf.edu/etd/19.
Повний текст джерелаPeterson, Sarah M. "Influence of scale, geometry, and microstructure on the electrical properties of chemically deposited thin silver films /." Connect to title online (ProQuest), 2007. http://proquest.umi.com/pqdweb?did=1453183211&sid=2&Fmt=2&clientId=11238&RQT=309&VName=PQD.
Повний текст джерелаTypescript. Includes vita and abstract. Includes bibliographical references (leaves 95-101). Also available online in ProQuest, free to University of Oregon users.
Tungasmita, Sukkaneste. "Growth of wide-band gap AIN and (SiC)x(AIN)₁₋x thin films by reactive magnetron sputter deposition /." Linköping : Univ, 2001. http://www.bibl.liu.se/liupubl/disp/disp2001/tek711s.pdf.
Повний текст джерелаDesai, Darshini. "Electrical characterization of thin film CdTe solar cells." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 320 p, 2007. http://proquest.umi.com/pqdweb?did=1257806491&sid=6&Fmt=2&clientId=8331&RQT=309&VName=PQD.
Повний текст джерелаChung, Tien-Kan. "Magnetoelectric coupling in layered thin film and nanostructure." Diss., Restricted to subscribing institutions, 2009. http://proquest.umi.com/pqdweb?did=1835573651&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.
Повний текст джерелаPradhan, Sailesh. "Tensile testing of thin films /." Available to subscribers only, 2006. http://proquest.umi.com/pqdweb?did=1203573161&sid=10&Fmt=2&clientId=1509&RQT=309&VName=PQD.
Повний текст джерела"Department of Mechanical Engineering and Energy Processes." Includes bibliographical references (leaves 73-84). Also available online.
Sakai, Akira, Yuji Torige, Masahisa Okada, Hiroya Ikeda, Yukio Yasuda, and Shigeaki Zaima. "Atomistic evolution of Si_{1–x–y}Ge_xC_y thin films on Si(001) surfaces." American Institute of Physics, 2001. http://hdl.handle.net/2237/6994.
Повний текст джерелаGasser, Stefan Michael Gasser Stefan Michael. "I. Mettalurgy of contacts to SiC and GaN ; II. Properties and oxidation of reactively sputtered Ru-Si-O thin films /." Bern : [s.n.], 1999. http://www.ub.unibe.ch/content/bibliotheken_sammlungen/sondersammlungen/dissen_bestellformular/index_ger.html.
Повний текст джерелаStepan, Lenka Lan-Sun. "Development and testing of a thin film nitinol heart valve." Diss., Restricted to subscribing institutions, 2007. http://proquest.umi.com/pqdweb?did=1324380381&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.
Повний текст джерелаGuerra, Torres Jorge Andrés. "Determination of the optical bandgap of thin amorphous (SiC) 1-x (AIN) x films produced by radio frequency dual magnetron sputtering." Master's thesis, Pontificia Universidad Católica del Perú, 2010. http://tesis.pucp.edu.pe/repositorio/handle/123456789/7009.
Повний текст джерелаTesis
Alkazaz, Malaz. "Synthèse de films minces de phases MAX par recuit thermique - Application à la formation de contacts ohmiques sur SiC." Thesis, Poitiers, 2014. http://www.theses.fr/2014POIT2328/document.
Повний текст джерелаMAX phases are a family of ternary carbides or nitrides which properties are generally described as an exceptional combination of the best properties of metals and ceramics. Thin films of MAX phases being considered as good candidates for ohmic contacts on SiC substrates for power microelectronics devices, thin films of Ti2AlN and Ti3(Si,Ge)C2 were synthesized by using original approaches. Highly textured Ti2AlN thin films were so obtained by thermal annealing at 750°C of (Ti+Al)/AlN multilayers whereas epitaxial thin films of Ti3SiC2 on 4H-SiC were achieved after an annealing at 1000°C of TixAly or TixGey layers. Good ohmic contact behaviors of Ti3SiC2 layers were confirmed in this work whereas Ti2AlN thin films behave as Schottky barriers
Carns, Regina C. "Patterning polymer thin films: lithographically induced self assembly and spinodal dewetting." Pomona College, 2004. http://ccdl.libraries.claremont.edu/u?/stc,5.
Повний текст джерелаRies, Ryan Scott. "Molecular thin films phospholipid bilayers and biosensors /." Diss., Restricted to subscribing institutions, 2004. http://proquest.umi.com/pqdweb?did=795970741&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.
Повний текст джерелаCook, Benjamin Patrick. "Lubrication models for particle-laden thin films." Diss., Restricted to subscribing institutions, 2007. http://proquest.umi.com/pqdweb?did=1456287871&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.
Повний текст джерелаBao, Lijie. "Sputtering deposition of barium titanate film on nickel foil." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 115 p, 2009. http://proquest.umi.com/pqdweb?did=1885755791&sid=1&Fmt=2&clientId=8331&RQT=309&VName=PQD.
Повний текст джерелаHou, Wei-Jen. "Hydrazine-based solution-processing of copper chalcopyrite for thin-film photovoltaics." Diss., Restricted to subscribing institutions, 2009. http://proquest.umi.com/pqdweb?did=1998530831&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.
Повний текст джерелаLi, Chiung-Nan. "Microstructural stability of nanocrystalline LiCoO₂ cathode in lithium thin-film batteries." Diss., Restricted to subscribing institutions, 2008. http://proquest.umi.com/pqdweb?did=1580828921&sid=1&Fmt=2&clientId=1564&RQT=309&VName=PQD.
Повний текст джерелаChun, Young Jae. "Thin film NiTi endovascular stent grafts for cerebral and aortic aneurysms." Diss., Restricted to subscribing institutions, 2009. http://proquest.umi.com/pqdweb?did=1835100701&sid=7&Fmt=2&clientId=1564&RQT=309&VName=PQD.
Повний текст джерелаHartman, Jeffrey David. "Charaterization of the Growth of Aluminum Nitride and Gallium Nitride Thin Films on Hydrogen Etched and/or cleaned 6H-SiC(0001) Surfaces." NCSU, 2000. http://www.lib.ncsu.edu/theses/available/etd-20001013-161053.
Повний текст джерелаThe surface morphology and atomic structure of nitrogen doped, n-type 6H-SiC(0001)Si wafers before and after various surface preparation techniques were investigated. As-received wafers were exposed to in-situ cleaning with or without excess silicon to obtain either a (rt3 x rt3)R30° or a (3 x 3) reconstructed surface. The resulting surfaces were characterized using reflection high-energy electron diffraction, photo-electron emission microscopy, and atomic force microscopy. An atomically clean, reconstructed surface was obtained via thermal annealing at 950ºC. Cleaning with excess silicon resulted in the formation of silicon islands on the surface. The surface morphology of hydrogen etched wafers depended upon their doping concentrations. Wafers with doping concentrations of greater than or equal 2.5 x 10E18 and less than 7 x 10E17 (ND-NA)/cm3 were investigated with the former exhibiting more surface features. The microstructure of all the samples showed regions with full and half unit cell high steps. An atomically clean, ordered, stepped surface was achieved via annealing at 1030 degrees Celcius. Chemical vapor cleaning resulted in the formation of silicon islands. The initial growth of AlN and GaN thin films on the cleaned, hydrogen etched 6H-SiC(0001) substrates were investigated using PEEM and AFM. The AlN films nucleated immediately and coalesced, except in the areas of the substrate surface which contained half unit cell height steps where pits were observed. The GaN films grown at 800ºC for 2.5 minutes exhibited nucleation and three-dimensional growth along the steps. The GaN films deposited at 700° C for 2 minutes grew three-dimensionally with coalescence of the film dependent upon the step structure. Almost complete coalescence occurred in regions with unit cell high steps and incomplete coalesce occurred in regions with half unit cell height steps. Films of AlN grown for 30 minutes via GSMBE on hydrogen etched surfaces exhibited two-dimensional growth and had an RMS roughness value of 4 Å. Films grown at 1000 ° C exhibited an SK growth mode and had rocking curve FWHM of 150-200 arcsecs. MOCVD grown films on hydrogen etched wafers had an RMS roughness value of 4 Å and a XRD rocking curve FWHM of approximately 260 acrsecs.
Phung, Tran M. "Developing analytical techniques using x-ray reflectivity and diffraction to study thin film systems /." view abstract or download file of text, 2006. http://proquest.umi.com/pqdweb?did=1251857031&sid=1&Fmt=2&clientId=11238&RQT=309&VName=PQD.
Повний текст джерелаTypescript. Includes vita and abstract. Includes bibliographical references (leaves 208-221). Also available for download via the World Wide Web; free to University of Oregon users.
Kamada, Rui. "Copper(indium,gallium)selenide film formation from selenization of mixed metal/metal-selenide precursors." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 226 p, 2009. http://proquest.umi.com/pqdweb?did=1654501631&sid=4&Fmt=2&clientId=8331&RQT=309&VName=PQD.
Повний текст джерела