Статті в журналах з теми "SiC SBD"
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Nakanishi, Yosuke, Takaaki Tominaga, Hiroaki Okabe, Yoshiyuki Suehiro, Kazuyuki Sugahara, Takeharu Kuroiwa, Yoshihiko Toyoda, et al. "Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate." Materials Science Forum 778-780 (February 2014): 820–23. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.820.
Повний текст джерелаShilpa, A., S. Singh, and N. V. L. Narasimha Murty. "Spectroscopic performance of Ni/4H-SiC and Ti/4H-SiC Schottky barrier diode alpha particle detectors." Journal of Instrumentation 17, no. 11 (November 1, 2022): P11014. http://dx.doi.org/10.1088/1748-0221/17/11/p11014.
Повний текст джерелаTominaga, Takaaki, Shiro Hino, Yohei Mitsui, Junichi Nakashima, Koutarou Kawahara, Shingo Tomohisa, and Naruhisa Miura. "Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD." Materials Science Forum 1004 (July 2020): 801–7. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.801.
Повний текст джерелаKinoshita, Akimasa, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, and Kazuo Arai. "Fabrication of 1.2kV, 100A, 4H-SiC(0001) and (000-1) Junction Barrier Schottky Diodes with Almost Same Schottky Barrier Height." Materials Science Forum 645-648 (April 2010): 893–96. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.893.
Повний текст джерелаKong, Moufu, Zewei Hu, Ronghe Yan, Bo Yi, Bingke Zhang, and Hongqiang Yang. "A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance." Journal of Semiconductors 44, no. 5 (May 1, 2023): 052801. http://dx.doi.org/10.1088/1674-4926/44/5/052801.
Повний текст джерелаTezuka, Kazuo, Tatsurou Tsuyuki, Saburou Shimizu, Shinichi Nakamata, Takashi Tsuji, Noriyuki Iwamuro, Shinsuke Harada, Kenji Fukuda, and Hiroshi Kimura. "High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices." Materials Science Forum 717-720 (May 2012): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.821.
Повний текст джерелаKinoshita, Akimasa, Takashi Nishi, Tsutomu Yatsuo, and Kenji Fukuda. "Improvement of SBD Electronic Characteristics Using Sacrificial Oxidation Removing the Degraded Layer from SiC Surface after High Temperature Annealing." Materials Science Forum 556-557 (September 2007): 877–80. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.877.
Повний текст джерелаHatakeyama, Tetsuo, Johji Nishio, and Takashi Shinohe. "Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)." Materials Science Forum 483-485 (May 2005): 921–24. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.921.
Повний текст джерелаYuan, Hao, Xiao Yan Tang, Yi Men Zhang, Yu Ming Zhang, Hong Liang Lv, Yue Hu Wang, Yu Fei Zhou, and Qing Wen Song. "The Fabrication of 4H-SiC Floating Junction SBDs (FJ_SBDs)." Materials Science Forum 778-780 (February 2014): 812–15. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.812.
Повний текст джерелаZiko, Mehadi Hasan, Ants Koel, Toomas Rang, and Muhammad Haroon Rashid. "Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding." Crystals 10, no. 8 (July 23, 2020): 636. http://dx.doi.org/10.3390/cryst10080636.
Повний текст джерелаHarada, Shinsuke, Yasuyuki Hoshi, Yuichi Harada, Takashi Tsuji, Akimasa Kinoshita, Mitsuo Okamoto, Youichi Makifuchi, et al. "High Performance SiC IEMOSFET/SBD Module." Materials Science Forum 717-720 (May 2012): 1053–58. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1053.
Повний текст джерелаCheng, Hongyu, Wenmao Li, Peiran Wang, Jianguo Chen, Qing Wang, and Hongyu Yu. "A Fast Recovery SiC TED MOS MOSFET with Schottky Barrier Diode (SBD)." Crystals 13, no. 4 (April 10, 2023): 650. http://dx.doi.org/10.3390/cryst13040650.
Повний текст джерелаKawahara, Koutarou, Shiro Hino, Koji Sadamatsu, Yukiyasu Nakao, Toshiaki Iwamatsu, Shuhei Nakata, Shingo Tomohisa, and Satoshi Yamakawa. "Impact of Embedding Schottky Barrier Diodes into 3.3 kV and 6.5 kV SiC MOSFETs." Materials Science Forum 924 (June 2018): 663–66. http://dx.doi.org/10.4028/www.scientific.net/msf.924.663.
Повний текст джерелаTomita, Masaaki, Yusuke Maeyama, M. Sato, Y. Fukuda, F. Honma, J. Ono, Masaaki Shimizu, and Hiroaki Iwakuro. "Device Simulation Model for Transient Analysis of SiC-SBD." Materials Science Forum 600-603 (September 2008): 975–78. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.975.
Повний текст джерелаKim, S. J., Y. S. Choi, S. J. Yu, Sang Cheol Kim, Wook Bahng, and K. H. Lee. "Breakdown Voltage Characteristics of FLR-Assisted SiC-SBD Formed by Aluminum Metal Junction Edge Termination." Materials Science Forum 556-557 (September 2007): 861–64. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.861.
Повний текст джерелаHino, Shiro, Hideyuki Hatta, Koji Sadamatsu, Yuichi Nagahisa, Shigehisa Yamamoto, Toshiaki Iwamatsu, Yasuki Yamamoto, Masayuki Imaizumi, Shuhei Nakata, and Satoshi Yamakawa. "Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode." Materials Science Forum 897 (May 2017): 477–82. http://dx.doi.org/10.4028/www.scientific.net/msf.897.477.
Повний текст джерелаKinoshita, Akimasa, Takashi Nishi, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, and Kazuo Arai. "Influence of Surface Roughness on Breakdown Voltage of 4H-SiC SBD with FLR Structure." Materials Science Forum 615-617 (March 2009): 643–46. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.643.
Повний текст джерелаImaizumi, Masayuki, Yoichiro Tarui, Shin Ichi Kinouchi, Hiroshi Nakatake, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Tetsuya Takami, and Tatsuo Ozeki. "Switching Characteristics of SiC-MOSFET and SBD Power Modules." Materials Science Forum 527-529 (October 2006): 1289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1289.
Повний текст джерелаCha, Kyuhyun, and Kwangsoo Kim. "Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications." Energies 14, no. 21 (November 4, 2021): 7305. http://dx.doi.org/10.3390/en14217305.
Повний текст джерелаKyoung, Sin Su, Eun Sik Jung, Tai Young Kang, Chang Heon Yang, and Man Young Sung. "A Study of Post Annealing Effects in the Repair of High Resistance Failures with Unstable Schottky Barrier Height in 4H-SiC Schottky Barrier Diode." Materials Science Forum 821-823 (June 2015): 588–91. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.588.
Повний текст джерелаNishikawa, Koichi, Yusuke Maeyama, Yusuke Fukuda, Masaaki Shimizu, Masashi Sato, and Hiroaki Iwakuro. "Reverse Biased Electrochemical Etching of SiC-SBD." Materials Science Forum 556-557 (September 2007): 419–22. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.419.
Повний текст джерелаHayashi, Tetsuya, Hideaki Tanaka, Yoshio Shimoida, Satoshi Tanimoto, and Masakatsu Hoshi. "New High-Voltage Unipolar Mode p+ Si/n– 4H-SiC Heterojunction Diode." Materials Science Forum 483-485 (May 2005): 953–56. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.953.
Повний текст джерелаSato, Shinji, Fumiki Kato, Hiroshi Hozoji, Hiroshi Sato, Hiroshi Yamaguchi, and Shinsuke Harada. "High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET." Materials Science Forum 1004 (July 2020): 1115–22. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1115.
Повний текст джерелаKim, S. J., S. Kim, Sang Cheol Kim, In Ho Kang, K. H. Lee, and T. Matsuoka. "FLR Geometry Dependence of Breakdown Voltage Characteristics for JBS-Assisted FLR SiC-SBD." Materials Science Forum 556-557 (September 2007): 869–72. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.869.
Повний текст джерелаDraghici, Florin, Gheorghe Brezeanu, Ion Rusu, Florin Bernea, and Phillippe Godignon. "High Temperature SiC Sensor with an Isolated Package." Materials Science Forum 740-742 (January 2013): 1002–5. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1002.
Повний текст джерелаHafez, Alaa El-Din Sayed, and Mohamed Abd El-Latif. "Optimum Barrier Height for SiC Schottky Barrier Diode." ISRN Electronics 2013 (July 31, 2013): 1–5. http://dx.doi.org/10.1155/2013/528094.
Повний текст джерелаMakino, Takahiro, Manato Deki, Shinobu Onoda, Norihiro Hoshino, Hidekazu Tsuchida, and Takeshi Ohshima. "Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes." Materials Science Forum 821-823 (June 2015): 575–78. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.575.
Повний текст джерелаHatakeyama, Tetsuo, Chiharu Ota, Johji Nishio, and Takashi Shinohe. "Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices." Materials Science Forum 527-529 (October 2006): 1179–82. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1179.
Повний текст джерелаKinoshita, Akimasa, Takashi Nishi, Takasumi Ohyanagi, Tsutomu Yatsuo, Kenji Fukuda, Hajime Okumura, and Kazuo Arai. "Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode." Materials Science Forum 600-603 (September 2008): 643–46. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.643.
Повний текст джерелаShimbori, Atsushi, and Alex Q. Huang. "Design methodologies and fabrication of 4H-SiC lateral Schottky barrier diode on thin RESURF layer." Applied Physics Letters 120, no. 12 (March 21, 2022): 122103. http://dx.doi.org/10.1063/5.0081106.
Повний текст джерелаOkino, Hiroyuki, Norifumi Kameshiro, Kumiko Konishi, Naomi Inada, Kazuhiro Mochizuki, Akio Shima, Natsuki Yokoyama, and Renichi Yamada. "Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes." Materials Science Forum 740-742 (January 2013): 881–86. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.881.
Повний текст джерелаTominaga, Takaaki, Naoyuki Kawabata, Akihiro Koyama, Takanori Tanaka, Hiroshi Watanabe, Nobuyuki Tomita, Naruhisa Miura, Takeharu Kuroiwa, and Satoshi Yamakawa. "Low Resistivity SiC Devices with a Drift Layer Optimized by Variational Approach." Materials Science Forum 858 (May 2016): 765–68. http://dx.doi.org/10.4028/www.scientific.net/msf.858.765.
Повний текст джерелаWATANABE, Yukihiko, Takashi KATSUNO, Tsuyoshi ISHIKAWA, Hirokazu FUJIWARA, and Toshimasa YAMAMOTO. "Relationship between Characteristics of SiC-SBD and Surface Defect." Hyomen Kagaku 35, no. 2 (2014): 84–89. http://dx.doi.org/10.1380/jsssj.35.84.
Повний текст джерелаFurno, M., F. Bonani, G. Ghione, Sergio Ferrero, Samuele Porro, P. Mandracci, Luciano Scaltrito, G. Richieri, Denis Perrone та Luigi Merlin. "Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes". Materials Science Forum 483-485 (травень 2005): 941–44. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.941.
Повний текст джерелаSong, Ho Keun, Jong Ho Lee, Myeong Sook Oh, Jeong Hyun Moon, Han Seok Seo, Jeong Hyuk Yim, Sun Young Kwon, and Hyeong Joon Kim. "Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor." Materials Science Forum 600-603 (September 2008): 971–74. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.971.
Повний текст джерелаWang, Xi, Yiwen Zhong, Hongbin Pu, Jichao Hu, Xianfeng Feng, and Guowen Yang. "Investigation of lateral spreading current in the 4H-SiC Schottky barrier diode chip." Journal of Semiconductors 42, no. 11 (November 1, 2021): 112802. http://dx.doi.org/10.1088/1674-4926/42/11/112802.
Повний текст джерелаZhang Lin, Han Chao, Ma Yong-Ji, Zhang Yi-Men, and Zhang Yu-Ming. "Gamma-ray radiation effect on Ni/4H-SiC SBD." Acta Physica Sinica 58, no. 4 (2009): 2737. http://dx.doi.org/10.7498/aps.58.2737.
Повний текст джерелаYang Yin-Tang, Geng Zhen-Hai, Duan Bao-Xing, Jia Hu-Jun, Yu Cen, and Ren Li-Li. "Characteristics of a SiC SBD with semi-superjunction structure." Acta Physica Sinica 59, no. 1 (2010): 566. http://dx.doi.org/10.7498/aps.59.566.
Повний текст джерелаKato, Fumiki, Fengqun Lang, Simanjorang Rejeki, Hiroshi Nakagawa, Hiroshi Yamaguchi, and Hiroshi Sato. "Precise Chip Joint Method with Sub-micron Au Particle for High-density SiC Power Module Operating at High Temperature." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (January 1, 2013): 000254–59. http://dx.doi.org/10.4071/hiten-wa17.
Повний текст джерелаOta, Chiharu, Johji Nishio, Tetsuo Hatakeyama, Takashi Shinohe, Kazutoshi Kojima, Shin Ichi Nishizawa, and Hiromichi Ohashi. "Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)." Materials Science Forum 556-557 (September 2007): 881–84. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.881.
Повний текст джерелаLiu, Ao, Yong Hong Tao, Song Bai, Gang Chen, Ling Wang, Run Hua Huang, Yun Li, and Zhi Fei Zhao. "Fabrication and High Temperature Characterization of 1200V-15A 4H-SIC JBS Diode." Applied Mechanics and Materials 713-715 (January 2015): 1034–37. http://dx.doi.org/10.4028/www.scientific.net/amm.713-715.1034.
Повний текст джерелаNagao, Shijo, Takuo Sugioka, Satoshi Ogawa, Teruhisa Fujibayashi, Zhang Hao, and Katsuaki Suganuma. "High Thermal Stability of SiC Packaging with Sintered Ag Paste Die-attach combined with Imide-based Molding." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000349–52. http://dx.doi.org/10.4071/isom-2015-wp15.
Повний текст джерелаKato, Tomohisa, Akimasa Kinoshita, Keisuke Wada, Takashi Nishi, Eiji Hozomi, Hiroyoshi Taniguchi, Kenji Fukuda, and Hajime Okumura. "Morphology Improvement of Step Bunching on 4H-SiC Wafers by Polishing Technique." Materials Science Forum 645-648 (April 2010): 763–65. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.763.
Повний текст джерелаGao, Rongyu, Hongyu Cheng, Wenmao Li, Chenkai Deng, Jianguo Chen, Qing Wang, and Hongyu Yu. "A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars." Crystals 12, no. 7 (June 28, 2022): 916. http://dx.doi.org/10.3390/cryst12070916.
Повний текст джерелаBernat, Robert, Ivana Capan, Luka Bakrač, Tomislav Brodar, Takahiro Makino, Takeshi Ohshima, Željko Pastuović, and Adam Sarbutt. "Response of 4H-SiC Detectors to Ionizing Particles." Crystals 11, no. 1 (December 24, 2020): 10. http://dx.doi.org/10.3390/cryst11010010.
Повний текст джерелаIvanov, Pavel A., and Igor V. Grekhov. "Breakdown Behavior of 900-V 4H-SiC Schottky Barrier Diodes Terminated with Boron-Implanted pn-Junction." Materials Science Forum 600-603 (September 2008): 955–58. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.955.
Повний текст джерелаKitabatake, Makoto, M. Tagome, S. Kazama, K. Yamashita, K. Hashimoto, Kunimasa Takahashi, O. Kusumoto, et al. "Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter." Materials Science Forum 600-603 (September 2008): 913–18. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.913.
Повний текст джерелаFujimoto, Keiya, Hiroaki Hanafusa, Takuma Sato, and Seiichiro Higashi. "Direct observation of three-dimensional transient temperature distribution in SiC Schottky barrier diode under operation by optical-interference contactless thermometry imaging." Applied Physics Express 15, no. 2 (January 25, 2022): 026502. http://dx.doi.org/10.35848/1882-0786/ac4a10.
Повний текст джерелаNomura, Yuki, Tsuyoshi Funaki, Toshio Hanada, and Takashi Nakamura. "Voltage Distribution in Ultra High Voltage SBD Modules with Directly Stacked SiC SBD Bare Chips in Series." IEEJ Transactions on Industry Applications 141, no. 8 (August 1, 2021): 646–53. http://dx.doi.org/10.1541/ieejias.141.646.
Повний текст джерелаBerthou, Maxime, Besar Asllani, Pierre Brosselard, and Philippe Godignon. "Cryogenic to High Temperature Exploration of 4H-SiC W-SBD." Materials Science Forum 821-823 (June 2015): 583–87. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.583.
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