Статті в журналах з теми "SiC power MOSFET"
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Lichtenwalner, Daniel J., Brett Hull, Vipindas Pala, Edward Van Brunt, Sei-Hyung Ryu, Joe J. Sumakeris, Michael J. O’Loughlin, Albert A. Burk, Scott T. Allen, and John W. Palmour. "Performance and Reliability of SiC Power MOSFETs." MRS Advances 1, no. 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.
Повний текст джерелаLi, Ruizhe. "The advantages and short circuit characteristics of SiC MOSFETs." Applied and Computational Engineering 49, no. 1 (March 22, 2024): 58–64. http://dx.doi.org/10.54254/2755-2721/49/20241059.
Повний текст джерелаHsu, Fu Jen, Cheng Tyng Yen, Hsiang Ting Hung, Jia Wei Hu, and Chih Fang Huang. "High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with Ultralow V<sub>GS(on)</sub>." Key Engineering Materials 948 (June 6, 2023): 89–93. http://dx.doi.org/10.4028/p-tuypqj.
Повний текст джерелаFunaki, Tsuyoshi, Yuki Nakano, and Takashi Nakamura. "Comparative Study of SiC MOSFETs in High Voltage Switching Operation." Materials Science Forum 717-720 (May 2012): 1081–84. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1081.
Повний текст джерелаKong, Moufu, Zewei Hu, Ronghe Yan, Bo Yi, Bingke Zhang, and Hongqiang Yang. "A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance." Journal of Semiconductors 44, no. 5 (May 1, 2023): 052801. http://dx.doi.org/10.1088/1674-4926/44/5/052801.
Повний текст джерелаvan Zeghbroeck, Bart, and Hamid Fardi. "Comparison of 3C-SiC and 4H-SiC Power MOSFETs." Materials Science Forum 924 (June 2018): 774–77. http://dx.doi.org/10.4028/www.scientific.net/msf.924.774.
Повний текст джерелаQiu, Guoqing, Kedi Jiang, Shengyou Xu, Xin Yang, and Wei Wang. "Modeling and analysis of the characteristics of SiC MOSFET." Journal of Physics: Conference Series 2125, no. 1 (November 1, 2021): 012051. http://dx.doi.org/10.1088/1742-6596/2125/1/012051.
Повний текст джерелаMatocha, Kevin, Peter A. Losee, Arun Gowda, Eladio Delgado, Greg Dunne, Richard Beaupre, and Ljubisa Stevanovic. "Performance and Reliability of SiC MOSFETs for High-Current Power Modules." Materials Science Forum 645-648 (April 2010): 1123–26. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1123.
Повний текст джерелаGreen, Ronald, Aivars J. Lelis, and Daniel B. Habersat. "Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing." Materials Science Forum 717-720 (May 2012): 1085–88. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1085.
Повний текст джерелаHan, Ki Jeong, B. Jayant Baliga, and Woong Je Sung. "1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results." Materials Science Forum 924 (June 2018): 684–88. http://dx.doi.org/10.4028/www.scientific.net/msf.924.684.
Повний текст джерелаLangpoklakpam, Catherine, An-Chen Liu, Kuo-Hsiung Chu, Lung-Hsing Hsu, Wen-Chung Lee, Shih-Chen Chen, Chia-Wei Sun, Min-Hsiung Shih, Kung-Yen Lee, and Hao-Chung Kuo. "Review of Silicon Carbide Processing for Power MOSFET." Crystals 12, no. 2 (February 11, 2022): 245. http://dx.doi.org/10.3390/cryst12020245.
Повний текст джерелаXu, Yige. "Applications and challenges of Silicon Carbide (SiC) MOSFET technology in electric vehicle propulsion systems: A review." Applied and Computational Engineering 40, no. 1 (February 21, 2024): 180–86. http://dx.doi.org/10.54254/2755-2721/40/20230647.
Повний текст джерелаYang, Dong, Stephan Wirths, Lars Knoll, Yi Han, Dan Mihai Buca, and Qing Tai Zhao. "Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs." Key Engineering Materials 945 (May 19, 2023): 77–82. http://dx.doi.org/10.4028/p-0ta22r.
Повний текст джерелаMüting, Johanna, Bhagyalakshmi Kakarla, and Ulrike Grossner. "Comprehensive and Detailed Study on the Modeling of Commercial SiC Power MOSFET Devices Using TCAD." Materials Science Forum 897 (May 2017): 553–56. http://dx.doi.org/10.4028/www.scientific.net/msf.897.553.
Повний текст джерелаLichtenwalner, Daniel J., Akin Akturk, James McGarrity, Jim Richmond, Thomas Barbieri, Brett Hull, Dave Grider, Scott Allen, and John W. Palmour. "Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout." Materials Science Forum 924 (June 2018): 559–62. http://dx.doi.org/10.4028/www.scientific.net/msf.924.559.
Повний текст джерелаKampitsis, Georgios E., Stavros A. Papathanassiou, and Stefanos N. Manias. "Comparative Analysis of the Thermal Stress of Si and SiC MOSFETs during Short Circuits." Materials Science Forum 856 (May 2016): 362–67. http://dx.doi.org/10.4028/www.scientific.net/msf.856.362.
Повний текст джерелаGrome, Christopher A., and Wei Ji. "A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs." Electronics 13, no. 8 (April 9, 2024): 1414. http://dx.doi.org/10.3390/electronics13081414.
Повний текст джерелаXie, Li Jun, Jin Yuan Li, and Kun Shan Yu. "Study on Loss Calculation for Inverter Based on 1200V SiC MOSFET." Applied Mechanics and Materials 672-674 (October 2014): 906–13. http://dx.doi.org/10.4028/www.scientific.net/amm.672-674.906.
Повний текст джерелаChe, Haoming. "Simulation study on dynamic characteristics of SiC MOSFET." Theoretical and Natural Science 5, no. 1 (May 25, 2023): 805–14. http://dx.doi.org/10.54254/2753-8818/5/20230507.
Повний текст джерелаDevadas, Shree Chakravarthy, and Ramani Kannan. "COMPARATIVE ANALYSIS OF THERMAL STRESS OF Si AND SiC MOSFETs." Platform : A Journal of Engineering 5, no. 2 (June 30, 2021): 23. http://dx.doi.org/10.61762/pajevol5iss2art12810.
Повний текст джерелаUmegami, Hirokatsu, Toshikazu Harada, and Ken Nakahara. "Performance Comparison of Si IGBT and SiC MOSFET Power Module Driving IPMSM or IM under WLTC." World Electric Vehicle Journal 14, no. 4 (April 17, 2023): 112. http://dx.doi.org/10.3390/wevj14040112.
Повний текст джерелаSato, Shinji, Fumiki Kato, Hidekazu Tanisawa, Kenichi Koui, Kinuyo Watanabe, Yoshinori Murakami, Yusuke Kobayashi, Hiroshi Sato, Hiroshi Yamaguchi, and Shinsuke Harada. "Development of a High-Speed Switching Silicon Carbide Power Module." Materials Science Forum 963 (July 2019): 864–68. http://dx.doi.org/10.4028/www.scientific.net/msf.963.864.
Повний текст джерелаHebali, Mourad, Menaouer Bennaoum, Mohammed Berka, Abdelkader Baghdad Bey, Mohammed Benzohra, Djilali Chalabi, and Abdelkader Saidane. "A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model." Journal of Electrical Engineering 70, no. 2 (April 1, 2019): 145–51. http://dx.doi.org/10.2478/jee-2019-0021.
Повний текст джерелаKannan, Ramani, Saranya Krishnamurthy, Chay Che Kiong, and Taib B. Ibrahim. "Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 2 (April 1, 2019): 1453. http://dx.doi.org/10.11591/ijece.v9i2.pp1453-1460.
Повний текст джерелаAtaseven, Ismail, Ilker Sahin, and Salih Baris Ozturk. "Design and Implementation of a Paralleled Discrete SiC MOSFET Half-Bridge Circuit with an Improved Symmetric Layout and Unique Laminated Busbar." Energies 16, no. 6 (March 21, 2023): 2903. http://dx.doi.org/10.3390/en16062903.
Повний текст джерелаLi, Jinyuan, Meiting Cui, Yujie Du, Junji Ke, and Zhibin Zhao. "Influence of Parasitic Inductances on Switching Performance of SiC MOSFET." E3S Web of Conferences 64 (2018): 04005. http://dx.doi.org/10.1051/e3sconf/20186404005.
Повний текст джерелаZhang, Liqi, Suxuan Guo, Pengkun Liu, and Alex Q. Huang. "Comparative Evaluation and Analysis of Gate Driver Impacts on a SiC MOSFET-Gate Driver Integrated Power Module." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000247–51. http://dx.doi.org/10.4071/isom-2017-wa35_023.
Повний текст джерелаRace, Salvatore, Ivana Kovacevic-Badstubner, Roger Stark, Alexander Tsibizov, Manuel Belanche, Yulieth Arango, Gianpaolo Romano, Lars Knoll та Ulrike Grossner. "Small-Signal Impedance and Split C-V Characterization of High-κ SiC Power MOSFETs". Materials Science Forum 1091 (5 червня 2023): 67–71. http://dx.doi.org/10.4028/p-2388hx.
Повний текст джерелаZhu, Tianle. "Study on switching behavior of silicon carbide MOSFET by gate driver." Highlights in Science, Engineering and Technology 56 (July 14, 2023): 506–19. http://dx.doi.org/10.54097/hset.v56i.10720.
Повний текст джерелаPrado, Edemar O., Pedro C. Bolsi, Hamiltom C. Sartori, and José R. Pinheiro. "An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications." Energies 15, no. 14 (July 20, 2022): 5244. http://dx.doi.org/10.3390/en15145244.
Повний текст джерелаImaizumi, Masayuki, Yoichiro Tarui, Shin Ichi Kinouchi, Hiroshi Nakatake, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Tetsuya Takami, and Tatsuo Ozeki. "Switching Characteristics of SiC-MOSFET and SBD Power Modules." Materials Science Forum 527-529 (October 2006): 1289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1289.
Повний текст джерелаZhu, Shengnan, Tianshi Liu, Junchong Fan, Arash Salemi, Marvin H. White, David Sheridan, and Anant K. Agarwal. "A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching." Materials 15, no. 19 (September 27, 2022): 6690. http://dx.doi.org/10.3390/ma15196690.
Повний текст джерелаVobecký, Jan. "The current status of power semiconductors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 193–203. http://dx.doi.org/10.2298/fuee1502193v.
Повний текст джерелаMatocha, Kevin, Sujit Banerjee, and Kiran Chatty. "Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers." Materials Science Forum 858 (May 2016): 803–6. http://dx.doi.org/10.4028/www.scientific.net/msf.858.803.
Повний текст джерелаAn, Yiping, Yifan Wang, Yujin Wu, and Jiazhen Yang. "Conduction Mechanism and Influencing Factors of SiC MOSFET." Journal of Physics: Conference Series 2435, no. 1 (February 1, 2023): 012021. http://dx.doi.org/10.1088/1742-6596/2435/1/012021.
Повний текст джерелаLuo, Qixiao. "Research on the advantages and development status of new material MOSFET." Highlights in Science, Engineering and Technology 33 (February 21, 2023): 210–18. http://dx.doi.org/10.54097/hset.v33i.5313.
Повний текст джерелаOkabe, Hiroaki, Motoru Yoshida, Takaaki Tominaga, Jun Fujita, Kazuyo Endo, Yoshinori Yokoyama, Kazuyasu Nishikawa, Yoshihiko Toyoda, and Satoshi Yamakawa. "High Temperature Reliability of the SiC-MOSFET with Copper Metallization." Materials Science Forum 778-780 (February 2014): 955–58. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.955.
Повний текст джерелаPeters, Dethard, Reinhold Schörner, Peter Friedrichs, and Dietrich Stephani. "SiC Power MOSFETs – Status, Trends and Challenges." Materials Science Forum 527-529 (October 2006): 1255–60. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1255.
Повний текст джерелаMatacena, Ilaria, Luca Maresca, Michele Riccio, Andrea Irace, Giovanni Breglio, and Santolo Daliento. "Evaluation of Interface Traps Type, Energy Level and Density of SiC MOSFETs by Means of C-V Curves TCAD Simulations." Materials Science Forum 1004 (July 2020): 608–13. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.608.
Повний текст джерелаHarada, Shinsuke, Makoto Kato, Tsutomu Yatsuo, Kenji Fukuda, and Kazuo Arai. "Influence of Metallization Annealing on Channel Mobility in 4H-SiC MOSFET on Carbon Face." Materials Science Forum 600-603 (September 2008): 675–78. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.675.
Повний текст джерелаZhang, Q. J., G. Wang, Charlotte Jonas, Craig Capell, Steve Pickle, P. Butler, Daniel J. Lichtenwalner та ін. "Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with Low Specific On-Resistance and High Switching Speed". Materials Science Forum 897 (травень 2017): 521–24. http://dx.doi.org/10.4028/www.scientific.net/msf.897.521.
Повний текст джерелаMatacena, Ilaria, Luca Maresca, Michele Riccio, Andrea Irace, Giovanni Breglio, and Santolo Daliento. "Experimental Analysis of C-V and I-V Curves Hysteresis in SiC MOSFETs." Materials Science Forum 1062 (May 31, 2022): 669–75. http://dx.doi.org/10.4028/p-bzki64.
Повний текст джерелаDhar, Sarit, Shurui Wang, John R. Williams, Sokrates T. Pantelides, and Leonard C. Feldman. "Interface Passivation for Silicon Dioxide Layers on Silicon Carbide." MRS Bulletin 30, no. 4 (April 2005): 288–92. http://dx.doi.org/10.1557/mrs2005.75.
Повний текст джерелаAlbrecht, Matthaeus, Tobias Erlbacher, Anton Bauer, and Lothar Frey. "Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation." Materials Science Forum 963 (July 2019): 827–31. http://dx.doi.org/10.4028/www.scientific.net/msf.963.827.
Повний текст джерелаTominaga, Takaaki, Shiro Hino, Yohei Mitsui, Junichi Nakashima, Koutarou Kawahara, Shingo Tomohisa, and Naruhisa Miura. "Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD." Materials Science Forum 1004 (July 2020): 801–7. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.801.
Повний текст джерелаHoffmann, Felix, Stefan Schmitt, and Nando Kaminski. "Comparison of the H3TRB Performance of Silicon and Silicon Carbide Power Modules." Materials Science Forum 1062 (May 31, 2022): 487–92. http://dx.doi.org/10.4028/p-7j50kd.
Повний текст джерелаFeng, Haonan, Sheng Yang, Xiaowen Liang, Dan Zhang, Xiaojuan Pu, Xu Cui, Haiyang Wang, Jing Sun, Xuefeng Yu, and Qi Guo. "Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs." Journal of Nanoelectronics and Optoelectronics 16, no. 9 (September 1, 2021): 1423–29. http://dx.doi.org/10.1166/jno.2021.3088.
Повний текст джерелаZhao, Zhiqin, and Xiaoqiong He. "Research on Digital Synchronous Rectification for a High-Efficiency DC-DC Converter in an Auxiliary Power Supply System of Magnetic Levitation." Energies 13, no. 1 (December 20, 2019): 51. http://dx.doi.org/10.3390/en13010051.
Повний текст джерелаChen, Zheng, Yiying Yao, Wenli Zhang, Dushan Boroyevich, Khai Ngo, Paolo Mattavelli, and Rolando Burgos. "Development of an SiC Multichip Phase-Leg Module for High-Temperature and High-Frequency Applications." Journal of Microelectronics and Electronic Packaging 13, no. 2 (April 1, 2016): 39–50. http://dx.doi.org/10.4071/imaps.503.
Повний текст джерелаWu, Zhaohui, Kangping Chen, and Bin Li. "A High Crosstalk Suppression SiC MOSFET Gate Driver." Journal of Physics: Conference Series 2584, no. 1 (September 1, 2023): 012071. http://dx.doi.org/10.1088/1742-6596/2584/1/012071.
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