Статті в журналах з теми "SiC power device"
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Harris, C. I., A. O. Konstantinov, C. Hallin, and E. Janzén. "SiC power device passivation using porous SiC." Applied Physics Letters 66, no. 12 (March 20, 1995): 1501–2. http://dx.doi.org/10.1063/1.113668.
Повний текст джерелаLichtenwalner, Daniel J., Brett Hull, Vipindas Pala, Edward Van Brunt, Sei-Hyung Ryu, Joe J. Sumakeris, Michael J. O’Loughlin, Albert A. Burk, Scott T. Allen, and John W. Palmour. "Performance and Reliability of SiC Power MOSFETs." MRS Advances 1, no. 2 (2016): 81–89. http://dx.doi.org/10.1557/adv.2015.57.
Повний текст джерелаChow, T. Paul. "SiC Bipolar Power Devices." MRS Bulletin 30, no. 4 (April 2005): 299–304. http://dx.doi.org/10.1557/mrs2005.77.
Повний текст джерелаvan Zeghbroeck, Bart, and Hamid Fardi. "Comparison of 3C-SiC and 4H-SiC Power MOSFETs." Materials Science Forum 924 (June 2018): 774–77. http://dx.doi.org/10.4028/www.scientific.net/msf.924.774.
Повний текст джерелаFriedrichs, Peter. "SiC Power Devices as Enabler for High Power Density - Aspects and Prospects." Materials Science Forum 778-780 (February 2014): 1104–9. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1104.
Повний текст джерелаPalmer, Michael J., R. Wayne Johnson, Tracy Autry, Rizal Aguirre, Victor Lee, and James D. Scofield. "SiC Power Switch Module." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000316–24. http://dx.doi.org/10.4071/hitec-rwjohnson-wp26.
Повний текст джерелаSoelkner, Gerald, Winfried Kaindl, Michael Treu, and Dethard Peters. "Reliability of SiC Power Devices Against Cosmic Radiation-Induced Failure." Materials Science Forum 556-557 (September 2007): 851–56. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.851.
Повний текст джерелаAl-bayati, Ali Mahmoud Salman. "Behavior, Switching Losses, and Efficiency Enhancement Potentials of 1200 V SiC Power Devices for Hard-Switched Power Converters." CPSS Transactions on Power Electronics and Applications 7, no. 2 (June 30, 2022): 113–29. http://dx.doi.org/10.24295/cpsstpea.2022.00011.
Повний текст джерелаWalden, Ginger G., Ty McNutt, Marc Sherwin, Stephen Van Campen, Ranbir Singh, and Rob Howell. "Comparison of 10 kV 4H-SiC Power MOSFETs and IGBTs for High Frequency Power Conversion." Materials Science Forum 600-603 (September 2008): 1139–42. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1139.
Повний текст джерелаChowdhury, Sauvik, Zachary Stum, Zhong Da Li, Katsunori Ueno, and T. Paul Chow. "Comparison of 600V Si, SiC and GaN Power Devices." Materials Science Forum 778-780 (February 2014): 971–74. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.971.
Повний текст джерелаVobecký, Jan. "The current status of power semiconductors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 193–203. http://dx.doi.org/10.2298/fuee1502193v.
Повний текст джерелаGreen, Ronald, Aivars J. Lelis, and Daniel B. Habersat. "Charge Trapping in Sic Power MOSFETs and its Consequences for Robust Reliability Testing." Materials Science Forum 717-720 (May 2012): 1085–88. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1085.
Повний текст джерелаFurubayashi, Yutaka, Takafumi Tanehira, Kei Yonemori, Nobuhide Seo, and Shinichiro Kuroki. "3D Integration of Si-Based Peltier Device onto 4H-SiC Power Device." Materials Science Forum 858 (May 2016): 1107–11. http://dx.doi.org/10.4028/www.scientific.net/msf.858.1107.
Повний текст джерелаTournier, Dominique, Miquel Vellvehi, Phillippe Godignon, Josep Montserrat, Dominique Planson, and F. Sarrus. "Current Sensing for SiC Power Devices." Materials Science Forum 527-529 (October 2006): 1215–18. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1215.
Повний текст джерелаOZPINECI, BURAK, LEON M. TOLBERT, SYED K. ISLAM, and MD HASANUZZAMAN. "SYSTEM IMPACT OF SILICON CARBIDE POWER DEVICES." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 439–48. http://dx.doi.org/10.1142/s0129156402001368.
Повний текст джерелаPhlips, Bernard F., Karl D. Hobart, Francis J. Kub, Robert E. Stahlbush, Mrinal K. Das, Gianluigi De Geronimo, and Paul O' Connor. "Silicon Carbide Power Diodes as Radiation Detectors." Materials Science Forum 527-529 (October 2006): 1465–68. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1465.
Повний текст джерелаRadhakrishnan, Rahul, Tony Witt, Seungchul Lee, and Richard Woodin. "Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters." Materials Science Forum 858 (May 2016): 177–80. http://dx.doi.org/10.4028/www.scientific.net/msf.858.177.
Повний текст джерелаIkpe, Stanley A., Jean-Marie Lauenstein, Gregory A. Carr, Don Hunter, Lawrence L. Ludwig, William Wood, Linda Y. Del Castillo, Mohammad M. Mojarradi, Fred Fitzpatrick, and Yuan Chen. "Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2016, HiTEC (January 1, 2016): 000184–89. http://dx.doi.org/10.4071/2016-hitec-184.
Повний текст джерелаMaralani, Ayden, Wei Cheng Lien, Nuo Zhang, and A. P. Pisano. "Silicon Carbide Transistors for IC Design Applications up to 600 °C." Materials Science Forum 778-780 (February 2014): 1126–29. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1126.
Повний текст джерелаPotbhare, Siddharth, Neil Goldsman, Akin Akturk, and Aivars J. Lelis. "Mixed Mode Modeling and Characterization of a 4H-SiC Power DMOSFET Based DC-DC Power Converter." Materials Science Forum 645-648 (April 2010): 1163–66. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.1163.
Повний текст джерелаPotbhare, Siddharth, Akin Akturk, Neil Goldsman, James M. McGarrity, and Anant Agarwal. "Modeling and Design of High Temperature Silicon Carbide DMOSFET Based Medium Power DC-DC Converter." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000144–51. http://dx.doi.org/10.4071/hitec-spotbhare-tp22.
Повний текст джерелаKodolitsch, E., V. Sodan, M. Krieger, and N. Tsavdaris. "Impact of Epitaxial Defects on Device Behavior and their Correlation to the Reverse Characteristics of SiC Devices." Materials Science Forum 1062 (May 31, 2022): 49–53. http://dx.doi.org/10.4028/p-f26rb5.
Повний текст джерелаGuo, Jianing. "Analysis of Current Imbalance in Paralleled Silicon Carbide Power MOSFETs." Academic Journal of Science and Technology 3, no. 3 (November 22, 2022): 247–54. http://dx.doi.org/10.54097/ajst.v3i3.2992.
Повний текст джерелаTezuka, Kazuo, Tatsurou Tsuyuki, Saburou Shimizu, Shinichi Nakamata, Takashi Tsuji, Noriyuki Iwamuro, Shinsuke Harada, Kenji Fukuda, and Hiroshi Kimura. "High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices." Materials Science Forum 717-720 (May 2012): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.821.
Повний текст джерелаSUGAWARA, YOSHITAKA. "Progress of Power Semiconductor Devices. 5. Recent Development of SiC Power Device." Journal of the Institute of Electrical Engineers of Japan 118, no. 5 (1998): 282–85. http://dx.doi.org/10.1541/ieejjournal.118.282.
Повний текст джерелаHolz, Matthias, Jochen Hilsenbeck, Ralf Otremba, Alexander Heinrich, Peter Türkes, and Roland Rupp. "SiC Power Devices: Product Improvement Using Diffusion Soldering." Materials Science Forum 615-617 (March 2009): 613–16. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.613.
Повний текст джерелаLangpoklakpam, Catherine, An-Chen Liu, Kuo-Hsiung Chu, Lung-Hsing Hsu, Wen-Chung Lee, Shih-Chen Chen, Chia-Wei Sun, Min-Hsiung Shih, Kung-Yen Lee, and Hao-Chung Kuo. "Review of Silicon Carbide Processing for Power MOSFET." Crystals 12, no. 2 (February 11, 2022): 245. http://dx.doi.org/10.3390/cryst12020245.
Повний текст джерелаRyu, Sei Hyung, Sumi Krishnaswami, Mrinal K. Das, Jim Richmond, Anant K. Agarwal, John W. Palmour, and James D. Scofield. "4H-SiC DMOSFETs for High Speed Switching Applications." Materials Science Forum 483-485 (May 2005): 797–800. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.797.
Повний текст джерелаRYU, SEI-HYUNG, SUMI KRISHNASWAMI, MRINAL DAS, JAMES RICHMOND, ANANT ANANT AGARWAL, JOHN PALMOUR, and JAMES SCOFIELD. "2 KV 4H-SiC DMOSFETS FOR LOW LOSS, HIGH FREQUENCY SWITCHING APPLICATIONS." International Journal of High Speed Electronics and Systems 14, no. 03 (September 2004): 879–83. http://dx.doi.org/10.1142/s0129156404002983.
Повний текст джерелаRichmond, Jim, Sei-Hyung Ryu, Qingchun (Jon) Zhang, Brett Hull, Mrinal Das, Albert Burk, Anant Agarwal, and John Palmour. "Comparison of High Temperature Operation of Silicon Carbide MOSFETs and Bipolar Junction Transistors." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, HITEC (January 1, 2010): 000136–43. http://dx.doi.org/10.4071/hitec-jrichmond-tp21.
Повний текст джерелаCheng, Lin, John W. Palmour, Anant K. Agarwal, Scott T. Allen, Edward V. Brunt, Gang Yao Wang, Vipindas Pala, et al. "Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings." Materials Science Forum 778-780 (February 2014): 1089–95. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1089.
Повний текст джерелаGudjónsson, G., Fredrik Allerstam, Per Åke Nilsson, Hans Hjelmgren, Einar Ö. Sveinbjörnsson, Herbert Zirath, T. Rödle, and R. Jos. "High Frequency 4H-SiC MOSFETs." Materials Science Forum 556-557 (September 2007): 795–98. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.795.
Повний текст джерелаRueschenschmidt, Kathrin, Michael Treu, Roland Rupp, Peter Friedrichs, Rudolf Elpelt, Dethard Peters, and Peter Blaschitz. "SiC JFET: Currently the Best Solution for an Unipolar SiC High Power Switch." Materials Science Forum 600-603 (September 2008): 901–6. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.901.
Повний текст джерелаMarek, Juraj, Jozef Kozarik, Michal Minarik, Aleš Chvála, Matej Matus, Martin Donoval, Lubica Stuchlikova, and Martin Weis. "Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress." Materials 15, no. 22 (November 19, 2022): 8230. http://dx.doi.org/10.3390/ma15228230.
Повний текст джерелаIwamuro, Noriyuki. "Recent Progress of SiC MOSFET Devices." Materials Science Forum 954 (May 2019): 90–98. http://dx.doi.org/10.4028/www.scientific.net/msf.954.90.
Повний текст джерелаBAKIN, ANDREY S. "SiC HOMOEPITAXY AND HETEROEPITAXY." International Journal of High Speed Electronics and Systems 15, no. 04 (December 2005): 747–80. http://dx.doi.org/10.1142/s0129156405003417.
Повний текст джерелаHazdra, Pavel, Stanislav Popelka, Vít Záhlava, and Jan Vobecký. "Radiation Damage in 4H-SiC and its Effect on Power Device Characteristics." Solid State Phenomena 242 (October 2015): 421–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.421.
Повний текст джерелаCha, Kwang-Hyung, Chang-Tae Ju, and Rae-Young Kim. "Analysis and Evaluation of WBG Power Device in High Frequency Induction Heating Application." Energies 13, no. 20 (October 14, 2020): 5351. http://dx.doi.org/10.3390/en13205351.
Повний текст джерелаTreu, M., R. Rupp, P. Blaschitz, and J. Hilsenbeck. "Commercial SiC device processing: Status and requirements with respect to SiC based power devices." Superlattices and Microstructures 40, no. 4-6 (October 2006): 380–87. http://dx.doi.org/10.1016/j.spmi.2006.09.005.
Повний текст джерелаDas, Mrinal K., Joseph J. Sumakeris, Brett A. Hull, and Jim Richmond. "Evolution of Drift-Free, High Power 4H-SiC PiN Diodes." Materials Science Forum 527-529 (October 2006): 1329–34. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1329.
Повний текст джерелаNagao, Shijo, Hirofumi Fujita, Akio Shimoyama, Shinya Seki, Hao Zhang, and Katsuaki Suganuma. "Power cycle reliability of SiC devices with metal-sinter die-attach and thermostable molding." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000008–12. http://dx.doi.org/10.4071/isom-2017-tp12_024.
Повний текст джерелаGreen, Ronald, Aivars J. Lelis, Mooro El, and Daniel B. Habersat. "Bias-Temperature-Stress Response of Commercially-Available SiC Power MOSFETs." Materials Science Forum 821-823 (June 2015): 677–80. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.677.
Повний текст джерелаRyu, Sei Hyung, Brett A. Hull, Sarit Dhar, L. Cheng, Qing Chun Jon Zhang, Jim Richmond, Mrinal K. Das, et al. "Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs." Materials Science Forum 645-648 (April 2010): 969–74. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.969.
Повний текст джерелаHatakeyama, Tetsuo, Kyoichi Ichinoseki, N. Higuchi, Kenji Fukuda, and Kazuo Arai. "Imaging and Metrology of Silicon Carbide Wafers by Laser-Based Optical Surface Inspection System." Materials Science Forum 600-603 (September 2008): 553–56. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.553.
Повний текст джерелаBrinkfeldt, K., T. Åklint, C. Sandberg, P. Johander, and D. Andersson. "High Temperature Packaging for SiC Power Transistors." International Symposium on Microelectronics 2012, no. 1 (January 1, 2012): 001124–30. http://dx.doi.org/10.4071/isom-2012-thp36.
Повний текст джерелаLarkin, D. J. "An Overview of SiC Epitaxial Growth." MRS Bulletin 22, no. 3 (March 1997): 36–41. http://dx.doi.org/10.1557/s0883769400032747.
Повний текст джерелаScofield, James D., Hiroyuki Kosai, Brett Jordan, Sei Hyung Ryu, Sumi Krishnaswami, Fatima Husna, and Anant K. Agarwal. "High Temperature DC-DC Converter Performance Comparison Using SiC JFETs, BJTs and Si MOSFETs." Materials Science Forum 556-557 (September 2007): 991–94. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.991.
Повний текст джерелаKaminski, Nando. "Reliability Challenges for SiC Power Devices in Systems and the Impact on Reliability Testing." Materials Science Forum 924 (June 2018): 805–10. http://dx.doi.org/10.4028/www.scientific.net/msf.924.805.
Повний текст джерелаLichtenwalner, Daniel J., Akin Akturk, James McGarrity, Jim Richmond, Thomas Barbieri, Brett Hull, Dave Grider, Scott Allen, and John W. Palmour. "Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout." Materials Science Forum 924 (June 2018): 559–62. http://dx.doi.org/10.4028/www.scientific.net/msf.924.559.
Повний текст джерелаChao, P. C., Kanin Chu, Jose Diaz, Carlton Creamer, Scott Sweetland, Ray Kallaher, Craig McGray, Glen D. Via, and John Blevins. "GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz." MRS Advances 1, no. 2 (2016): 147–55. http://dx.doi.org/10.1557/adv.2016.176.
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