Готові списки джерел за темами / Si/β-FeSi2

Добірка наукової літератури з теми "Si/β-FeSi2"

Автор: Grafiati

Опубліковано: 6 вересня 2023

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Статті в журналах з теми "Si/β-FeSi2"

Cho, Sung-Pyo, Yoshiaki Nakamura, Jun Yamasaki, Eiji Okunishi, Masakazu Ichikawa та Nobuo Tanaka. "Microstructure and interdiffusion behaviour of β-FeSi2 flat islands grown on Si(111) surfaces". Journal of Applied Crystallography 46, № 4 (4 липня 2013): 1076–80. http://dx.doi.org/10.1107/s0021889813015355.

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β-FeSi2 flat islands have been fabricated on ultra-thin oxidized Si(111) surfaces by Fe deposition on Si nanodots. The microstructure and interdiffusion behaviour of the β-FeSi2/Si(111) system at the atomic level were studied by using spherical aberration-corrected high-angle annular dark-field scanning transmission electron microscopy and energy dispersive X-ray spectroscopy. The formed β-FeSi2 flat islands had a disc shape with an average size of 30–150 nm width and 10–20 nm height, and were epitaxically grown on high-quality single-phase Si with a crystallographic relationship (110)β-FeSi2/(111)Si and [001]β-FeSi2/[1\bar 10]Si. Moreover, the heterojunction between the β-FeSi2(110) flat islands and the Si(111) substrate was an atomically and chemically abrupt interface without any irregularities. It is believed that these results are caused by the use of ultra-thin SiO2 films in our fabrication method, which is likely to be beneficial particularly for fabricating practical nanoscaled devices.

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Eguchi, Hajime, Motoki Iinuma, Hirofumi Hoshida, Naoki Murakoso та Yoshikazu Terai. "Growth of Sb-Doped β-FeSi₂ Epitaxial Films and Optimization of Donor Activation Conditions". Defect and Diffusion Forum 386 (вересень 2018): 38–42. http://dx.doi.org/10.4028/www.scientific.net/ddf.386.38.

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Sb-doped β-FeSi2 epitaxial films on Si(111) were grown by molecular beam epitaxy to control an electron density of β-FeSi2. After an optimization of donor activation conditions in the Sb-doped β-FeSi2, the electron density of 6 × 1018 cm-3 at 300 K was achieved by thermal annealing in a N2 ambient. In the temperature dependence of carrier density, the n-type conduction was changed to p-type conduction at low temperatures in the film annealed at high temperature (600 °C). Raman spectra of the annealed films showed that both Fe and Si sites were substituted by the doped Sb in β-FeSi2 lattice.

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Akiyama, Kensuke, Hiroshi Funakubo та Masaru Itakura. "Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate". MRS Proceedings 1493 (2013): 189–94. http://dx.doi.org/10.1557/opl.2013.407.

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ABSTRACTHigh-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.

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Li, Xiao Na, Bing Hu, Chuang Dong, and Xin Jiang. "Structural Evolution Upon Annealing of Multi-Layer Si/Fe Thin Films Prepared by Magnetron Sputtering." Materials Science Forum 561-565 (October 2007): 1161–64. http://dx.doi.org/10.4028/www.scientific.net/msf.561-565.1161.

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Fe/Si multi-layer films were fabricated on Si (100) substrates utilizing radio frequency magnetron sputtering system. Si/β-FeSi2 structure was found in the films after the deposition. Structural characterization of Fe-silicide sample was performed by transmission electron microscopy, to explore the dependence of the microstructure of β-FeSi2 film on the preparation parameters. It was found that β-FeSi2 particles were formed after the deposition without annealing, whose size is less than 20nm ,with a direct band-gap of 0.94eV in room temperature. After annealing at 850°C, particles grow lager, however the stability of thin films was still good.

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Akiyama, Kensuke, Yuu Motoizumi, Tetsuya Okuda, Hiroshi Funakubo, Hiroshi Irie, and Yoshihisa Matsumoto. "Synthesis and Photocatalytic Properties of Iron Disilicide/SiC Composite Powder." MRS Advances 2, no. 8 (2017): 471–76. http://dx.doi.org/10.1557/adv.2017.221.

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ABSTRACTSemiconducting iron disilicide (β-FeSi2) island grains of 50-100 nanometers in size were formed on the surface of Au-coated 3C-SiC powder by metal-organic chemical vapor deposition. On the surface of 3C-SiC powder, the Au-Si liquidus phase was obtained via a Au-Si eutectic reaction, which contributed to the formation of the β-FeSi2 island grains. This β-FeSi2/SiC composite powder could evolve hydrogen (H2) from methyl-alcohol aqueous solution under irradiation of visible light with wavelengths of 420-650 nm.

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Tsunoda, Tatsuo, Masakazu Mukaida, Akio Watanabe, and Yoji Imai. "Composition dependence of morphology, structure, and thermoelectric properties of FeSi2 films prepared by sputtering deposition." Journal of Materials Research 11, no. 8 (August 1996): 2062–70. http://dx.doi.org/10.1557/jmr.1996.0259.

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Direct β–FeSi2 film preparation from gaseous phase was examined using a radio-frequency (rf) sputtering deposition apparatus equipped with a composite target of iron and silicon. Films composed of only β–FeSi2 phase were formed at substrate temperatures above 573 K when the chemical composition of the film was very close to stoichiometric FeSi2. The β–FeSi2 films thus formed showed rather large positive Seebeck coefficient. When the chemical composition of the films were deviated to the Fe-rich side, ∈–FeSi phase was formed along with β–FeSi2. On the other hand, α–FeSi2 phase, which is stable above 1210 K in the equilibrium phase diagram, was formed at the substrate temperature as low as 723 K when the chemical composition was deviated to the Si-rich side. The formation of α–FeSi2 phase induced drastic changes in the morphology and thermoelectric properties of the films. The α–FeSi2 phase formed in the films was easily transformed to β–FeSi2 phase by a thermal treatment.

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Lin, X. W., Z. Liliental-Weber, J. Washburn, J. Desimoni та H. Bernas. "Formation of β-FeSi2, by thermal annealing of Fe-implanted (001) Si". Proceedings, annual meeting, Electron Microscopy Society of America 51 (1 серпня 1993): 808–9. http://dx.doi.org/10.1017/s0424820100149878.

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Epitaxy of semiconducting β-FeSi2 on Si is of interest for optoelectronic device technology, because of its direct bandgap of ≈0.9 eV. Several techniques, including solid phase epitaxy (SPE) and ion beam synthesis, have been successfully used to grow β-FeSi2 on either Si (001) or (111) wafers. In this paper, we report the epitaxial formation of β-FeSi2 upon thermal annealing of an Fe-Si amorphous layer formed by ion implantation.Si (001) wafers were first implanted at room temperature with 50-keV Fe+ ions to a dose of 0.5 - 1×1016 cm−2, corresponding to a peak Fe concentration of cp ≈ 2 - 4 at.%, and subsequently annealed at 320, 520, and 900°C, in order to induce SPE of the implanted amorphous layer. Cross-sectional high-resolution electron microscopy (HREM) was used for structural characterization.We find that the implanted surface layer ( ≈100 nm thick) remains amorphous for samples annealed at 320°C for as long as 3.2 h, whereas annealing above 520°C results in SPE of Si, along with precipitation of β-FeSi2.

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Nanko, Makoto, Se Hun Chang, Koji Matsumaru, Kozo Ishizaki та Masatoshi Takeda. "Isothermal Oxidation of Sintered β-FeSi₂ in Air". Materials Science Forum 522-523 (серпень 2006): 641–48. http://dx.doi.org/10.4028/www.scientific.net/msf.522-523.641.

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High-temperature oxidation of sintered β-FeSi2 doped with Mn and Co was evaluated at 800°C in air. Amorphous SiO2 was developed as an oxide scale. Granular ε-FeSi also appeared below the SiO2 scale as a result of consumption of Si in β-FeSi2. Growth of the oxide scale on doped FeSi2 followed a parabolic law and its rate was similar to oxidation of undoped samples. Thermoelectric properties of sintered β-FeSi2 were also evaluated before and after oxidation at 800°C for 7 days. There was no significant change in thermoelectric properties after high-temperature oxidation on β-FeSi2 sintered bodies.

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Visotin, Maxim A., I. A. Tarasov, A. S. Fedorov, S. N. Varnakov та S. G. Ovchinnikov. "Prediction of orientation relationships and interface structures between α-, β-, γ-FeSi2 and Si phases". Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials 76, № 3 (22 травня 2020): 469–82. http://dx.doi.org/10.1107/s2052520620005727.

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A pure crystallogeometrical approach is proposed for predicting orientation relationships, habit planes and atomic structures of the interfaces between phases, which is applicable to systems of low-symmetry phases and epitaxial thin film growth. The suggested models are verified with the example of epitaxial growth of α-, γ- and β-FeSi2 silicide thin films on silicon substrates. The density of near-coincidence sites is shown to have a decisive role in the determination of epitaxial thin film orientation and explains the superior quality of β-FeSi2 thin grown on Si(111) over Si(001) substrates despite larger lattice misfits. Ideal conjunctions for interfaces between the silicide phases are predicted and this allows for utilization of a thin buffer α-FeSi2 layer for oriented growth of β-FeSi2 nanostructures on Si(001). The thermal expansion coefficients are obtained within quasi-harmonic approximation from the DFT calculations to study the influence of temperature on the lattice strains in the derived interfaces. Faster decrease of misfits at the α-FeSi2(001)||Si(001) interface compared to γ-FeSi2(001)||Si(001) elucidates the origins of temperature-driven change of the phase growing on silicon substrates. The proposed approach guides from bulk phase unit cells to the construction of the interface atomic structures and appears to be a powerful tool for the prediction of interfaces between arbitrary phases for subsequent theoretical investigation and epitaxial film synthesis.

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Akiyama, Kensuke, Satoru Kaneko, Yasuo Hirabayashi та Hiroshi Funakubo. "Photoluminescence properties of Si/β-FeSi2/Si double heterostructure". Thin Solid Films 508, № 1-2 (червень 2006): 380–84. http://dx.doi.org/10.1016/j.tsf.2005.07.353.

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Більше джерел

Дисертації з теми "Si/β-FeSi2"

Huang, Cheng-Yao, та 黃鉦堯. "Analysis of the Responsivities and Quantum Efficiencies of the p-Si/ i-β-FeSi2 /n-Si Photodiodes". Thesis, 2017. http://ndltd.ncl.edu.tw/handle/6q38tu.

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碩士
義守大學
電子工程學系
106
In this paper the responsivities and quantum efficiencies of p-Si/i-β-FeSi2/n-Si double heterostructure photodiodes and p-Si/i-Si/n-Si photodiodes are investigated by using self-developed analytical methods. The dark current densities of β-FeSi2 and Si p-i-n photodiodes under reverse-bias condition are calculated by solving the diffusion current densities of minority carriers. The photocurrent densities of β-FeSi2 p-i-n photodiode under illumination with reverse-bias are calculated by solving the drift current densities in the depletion regions. When the β-FeSi2 p-i-n photodiode incident wavelength < 0.6um, the magnitudes of responsivities and quantum efficiencies are almost zero for different intrinsic thicknesses. The maximum responsivity, R=0.65 A/W, and quantum efficiency, =65%, are both at =1.2um and the intrinsic β-FeSi2 layer thickness is 100um.The calculated responsivity of Si p-i-n photodiode is consistent with the reported researches. Therefore, the analysis methods are valid in this work. These results indicate the high application potential of β-FeSi2 as near-infrared photodiodes integrated with Si.

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Tsai, Yi-Wei, та 蔡一葦. "Studies of Strain Field of β - FeSi2 / Si Quantum Dot Nano-Structures by X-Ray Bragg-Surface Diffraction". Thesis, 2007. http://ndltd.ncl.edu.tw/handle/23528057967960707147.

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Частини книг з теми "Si/β-FeSi2"

Schaaf, P., M. Milosavljevic, S. Dhar, N. Bibic, K. P. Lieb, M. Wölz, and G. Principi. "Mössbauer Optimization of the Direct Synthesis of β-FeSi2 by Ion Beam Mixing of Fe/Si Bilayers." In Industrial Applications of the Mössbauer Effect, 615–21. Dordrecht: Springer Netherlands, 2002. http://dx.doi.org/10.1007/978-94-010-0299-8_67.

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Yamauchi, S., H. Ohshima, T. Hattori, M. Kasaya, M. Hirai, M. Kusaka, M. Iwami, Y. Kamiura, and F. Hashimoto. "Preparation and Electronic Properties of Epitaxial β-FeSi2 on Si(111) Substrate." In Control of Semiconductor Interfaces, 377–82. Elsevier, 1994. http://dx.doi.org/10.1016/b978-0-444-81889-8.50070-5.

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Katsumata, Hiroshi, Hong-Lie Shen, Naoto Kobayashi, Yunosuke Makita, Masataka Hasegawa, Hajime Shibata, Shinji Kimura, Akira Obara, and Shin-ichiro Uekusa. "Optical and structural properties of β-FeSi2 layers on Si fabricated by triple 56Fe ion implantations." In Ion Beam Modification of Materials, 943–46. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82334-2.50187-8.

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Maltez, R. L., M. Behar, and X. W. Lin. "Ion-beam induced sequential epitaxy of α, β and γ-FeSi2 in Si (100) at 320°C." In Ion Beam Modification of Materials, 400–403. Elsevier, 1996. http://dx.doi.org/10.1016/b978-0-444-82334-2.50076-9.

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Shaban, Mahmoud, and Tsuyoshi Yoshitake. "n-Type β-FeSi2/p-type Si Near-infrared Photodiodes Prepared by Facing-targets Direct-current Sputtering." In Advances in Photodiodes. InTech, 2011. http://dx.doi.org/10.5772/14775.

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Тези доповідей конференцій з теми "Si/β-FeSi2"

Akiyama, K., M. Itakura та H. Funakubo. "Photoluminescence enhancement from β-FeSi2 on Ag-coated Si". У 2012 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2012. http://dx.doi.org/10.7567/ssdm.2012.ps-8-9.

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Maeda, Yoshihito, Takahide Tatsumi, Yuki Kawakubo, Yuya Noguchi, Kosuke Morita, Hiroyuki Kobayashi та Kazumasa Narumi. "Enhancement of photoluminescence from Cu-doped β-FeSi2/Si heterostructures". У International Conference and Summer School on Advanced Silicide Technology 2014. Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/jjapcp.3.011108.

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GALKIN, N. G., E. A. CHUSOVITIN, K. N. GALKIN, T. S. SHAMIRSAEV, A. K. GUTAKOVSKI та A. V. LATYSHEV. "LIGHT EMITTING β-FeSi2 NANOCRYSTALS IN MULTILAYER Si/β-FeSi2NCS/Si/…/Si NANOHETEROSTRUCTURES GROWN BY SPE, RDE AND MBE TECHNIQUES". У Proceedings of International Conference Nanomeeting – 2011. WORLD SCIENTIFIC, 2011. http://dx.doi.org/10.1142/9789814343909_0036.

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Maeda, Yoshihito, Yoshikazu Terai та Masaru Itakura. "Crystal Growth and Photoresponse of Al-doped β-FeSi2 /Si Heterojunctions". У 2004 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2004. http://dx.doi.org/10.7567/ssdm.2004.d-9-3.

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Terai, Yoshikazu, Yoshihito Maeda, Kensuke Akiyama та Yasufumi Fujiwara. "Investigation of β-FeSi2/Si Heterostructures by Photoluminescence with Different Optical Configurations". У 2005 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2005. http://dx.doi.org/10.7567/ssdm.2005.e-4-3.

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GALKIN, N. G., D. L. GOROSHKO, A. S. GOURALNIK, V. O. POLYARNYI, S. V. VAVANOVA та I. V. LOUCHANINOV. "SILICON GROWTH ATOP β-FeSi2 ISLANDS ON Si(111) SUBSTRATE AND Si(111)-Cr SURFACE PHASES". У Reviews and Short Notes to Nanomeeting-2005. WORLD SCIENTIFIC, 2005. http://dx.doi.org/10.1142/9789812701947_0034.

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Borun, A. F., N. P. Khmelnitskaja, Yu N. Parkhomenko, E. G. Polyakova та E. A. Vygovskaja. "The strain distribution in Si lattice of the layer containing β-FeSi2 precipitates". У SPIE Proceedings, редактори Kamil A. Valiev та Alexander A. Orlikovsky. SPIE, 2004. http://dx.doi.org/10.1117/12.557967.

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Takauji, Motoki, Cheng Li, Takashi Suemasu та Fumio Hasegawa. "Fabrication of p-Si/β-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy". У 2004 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2004. http://dx.doi.org/10.7567/ssdm.2004.d-9-1.

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Takahara, Motoki, Tarek M. Mostafa, Ryuji Baba, Suguru Funasaki, Mahmoud Shaban, Nathaporn Promros та Tsuyoshi Yoshitake. "Electric properties of carbon-doped n-type β-FeSi2/p-type Si heterojunction diodes". У International Conference and Summer School on Advanced Silicide Technology 2014. Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/jjapcp.3.011101.

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Shevlyagin, A. V., D. L. Goroshko, E. A. Chusovitin, S. A. Balagan, S. A. Dotsenko, K. N. Galkin, N. G. Galkin та ін. "Stress-induced indirect to direct band gap transition in β-FeSi2 nanocrystals embedded in Si". У ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING: FROM THEORY TO APPLICATIONS: Proceedings of the International Conference on Electrical and Electronic Engineering (IC3E 2017). Author(s), 2017. http://dx.doi.org/10.1063/1.4998036.

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