Увійти

Готові списки джерел за темами / Si Quantum Dot / Статті в журналах

Статті в журналах з теми "Si Quantum Dot"

Щоб переглянути інші типи публікацій з цієї теми, перейдіть за посиланням: Si Quantum Dot.

Автор: Grafiati

Опубліковано: 6 вересня 2023

Оформте джерело за APA, MLA, Chicago, Harvard та іншими стилями

Оберіть тип джерела:

Ознайомтеся з топ-50 статей у журналах для дослідження на тему "Si Quantum Dot".

Біля кожної праці в переліку літератури доступна кнопка «Додати до бібліографії». Скористайтеся нею – і ми автоматично оформимо бібліографічне посилання на обрану працю в потрібному вам стилі цитування: APA, MLA, «Гарвард», «Чикаго», «Ванкувер» тощо.

Також ви можете завантажити повний текст наукової публікації у форматі «.pdf» та прочитати онлайн анотацію до роботи, якщо відповідні параметри наявні в метаданих.

Переглядайте статті в журналах для різних дисциплін та оформлюйте правильно вашу бібліографію.

1

Porod, Wolfgang. "Quantum-Dot Devices and Quantum-Dot Cellular Automata." International Journal of Bifurcation and Chaos 07, no. 10 (October 1997): 2199–218. http://dx.doi.org/10.1142/s0218127497001606.

Повний текст джерела

Анотація:

We discuss novel nanoelectronic architecture paradigms based on cells composed of coupled quantum-dots. Boolean logic functions may be implemented in specific arrays of cells representing binary information, the so-called Quantum-Dot Cellular Automata (QCA). Cells may also be viewed as carrying analog information and we outline a network-theoretic description of such Quantum-Dot Nonlinear Networks (Q-CNN). In addition, we discuss possible realizations of these structures in a variety of semiconductor systems (including GaAs/AlGaAs, Si/SiGe, and Si/SiO 2), rings of metallic tunnel junctions, and candidates for molecular implementations.

Стилі APA, Harvard, Vancouver, ISO та ін.

2

Dvurechenskii, Anatolii V., and Andrei I. Yakimov. "Quantum dot Ge/Si heterostructures." Uspekhi Fizicheskih Nauk 171, no. 12 (2001): 1371. http://dx.doi.org/10.3367/ufnr.0171.200112h.1371.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

3

Dvurechenskii, Anatolii V., and Andrei I. Yakimov. "Quantum dot Ge/Si heterostructures." Physics-Uspekhi 44, no. 12 (December 31, 2001): 1304–7. http://dx.doi.org/10.1070/pu2001v044n12abeh001057.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

4

Lambert, K., I. Moreels, D. Van Thourhout, and Z. Hens. "Quantum Dot Micropatterning on Si." Langmuir 24, no. 11 (June 2008): 5961–66. http://dx.doi.org/10.1021/la703664r.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

5

Dvurechenskii, Anatoly, Andrew Yakimov, Victor Kirienko, Alekcei Bloshkin, Vladimir Zinovyev, Aigul Zinovieva, and Alexander Mudryi. "Enhanced Optical Properties of Silicon Based Quantum Dot Heterostructures." Defect and Diffusion Forum 386 (September 2018): 68–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.386.68.

Повний текст джерела

Анотація:

New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si (100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.

Стилі APA, Harvard, Vancouver, ISO та ін.

6

Gudlavalleti, R. H., B. Saman, R. Mays, M. Lingalugari, E. Heller, J. Chandy, and F. Jain. "Modeling of Multi-State Si and Ge Cladded Quantum Dot Gate FETs Using Verilog and ABM Simulations." International Journal of High Speed Electronics and Systems 28, no. 03n04 (September 2019): 1940026. http://dx.doi.org/10.1142/s0129156419400263.

Повний текст джерела

Анотація:

Quantum dot gate (QDG) field-effect transistors (FETs) fabricated using Si and Ge quantum dot layers, self-assembled in the gate region over the tunnel oxide, have exhibited 3- and 4-state behavior applicable for ternary and quaternary logic, respectively. This paper presents simulation of QDG-FETs comprising mixed Ge and Si quantum dot layers over tunnel oxide using an analog behavior model (ABM) and Verilog model. The simulations reproduce the experimental I-V characteristics of a fabricated mixed dot QDG-FET. GeOx-cladded Ge quantum dot layer is in interface to the tunnel oxide and is deposited over with a SiOx-cladded Si quantum dot layer. The fabricated QDG-FET has one source and one gate. The ABM simulation models QDG-FET using conventional BSIM 3V3 FETs with capacitances and other device parameters. In addition, VERILOG model is presented. The agreement in circuit and quantum simulations and experimental data will further advance in the designing of QDG-FET-based analog-to-digital converters (ADCs), 2-bit logic gates and SRAM cells.

Стилі APA, Harvard, Vancouver, ISO та ін.

7

Kondo, Jun, Pial Mirdha, Barath Parthasarathy, Pik-Yiu Chan, Bander Saman, Faquir Jain, and Evan Heller. "Modeling and Fabrication of GeOx-Ge Cladded Quantum Dot Channel (QDC) FETs on Poly-Silicon." International Journal of High Speed Electronics and Systems 27, no. 01n02 (March 2018): 1840005. http://dx.doi.org/10.1142/s0129156418400050.

Повний текст джерела

Анотація:

Quantum dot channel (QDC) and Quantum dot gate (QDG) field effect transistors (FETs) have been fabricated on crystalline Si using cladded Si and Ge quantum dots. This paper presents fabrication and modeling of quantum dot channel field effect transistors (QDC-FETs) using cladded Ge quantum dots on poly-Si thin films grown on silicon-on-insulator (SOI) substrates. HfAlO2 high-k dielectric layers are used for the gate dielectric. QDC-FETs exhibit multi-state I-V characteristics which enable two-bit processing, and reduce FET count and power dissipation. QDC-FETs using germanium quantum dots provide higher electron mobility than conventional poly-silicon FETs, and mobility values comparable to conventional FETs using single crystalline silicon.

Стилі APA, Harvard, Vancouver, ISO та ін.

8

Parthasarathy, Barath, Pial Mirdha, Jun Kondo, and Faquir Jain. "Dual Quantum Dot Superlattice." International Journal of High Speed Electronics and Systems 27, no. 01n02 (March 2018): 1840003. http://dx.doi.org/10.1142/s0129156418400037.

Повний текст джерела

Анотація:

In this paper, we propose a structure using four layers of quantum dots on crystalline silicon. The quantum dots site-specifically self-assembled in the p-type material due to the electrostatic attraction. This quantum dot super lattice (QDSL) structure will be constructed using a mixed layer of Germanium (Ge) and Silicon (Si) dots. Atomic Force Microscopy results will show the accurate stack height formed from individual and multi stacked layers. This is the first novel characterization of 4 layers of 2 separate self assemblies. This was also applied to a quantum dot gate field effect transistor (QDG-FET).

Стилі APA, Harvard, Vancouver, ISO та ін.

9

Chen, Minhan, and Wolfgang Porod. "Simulation of Quantum-Dot Structures in Si/SiO2." VLSI Design 6, no. 1-4 (January 1, 1998): 335–39. http://dx.doi.org/10.1155/1998/89258.

Повний текст джерела

Анотація:

We present numerical simulations for the design of gated few-electron quantum dot structures in the Si/SiO2 material system. Because of the vicinity of the quantum dots to the exposed surface, we take special care in treating the boundary conditions at the oxide/vacuum interfaces. In our simulations, the confining potential is obtained from the Poisson equation with a Thomas-Fermi charge model. We find that the dot occupancy can be effectively controlled in the few-electron regime.

Стилі APA, Harvard, Vancouver, ISO та ін.

10

He, Peng, Chong Wang, Jie Yang, and Yu Yang. "Advance of Ge/Si Quantum Dot Infrared Photodetector." Advanced Materials Research 873 (December 2013): 799–808. http://dx.doi.org/10.4028/www.scientific.net/amr.873.799.

Повний текст джерела

Анотація:

The generation of quantum dots (QDs), the advantages and disadvantages of quantum dot infrared photodetector (QDIP) are briefly reviewed. Typical techniques for fabricating ordered Ge/Si QDs, the application of Ge/Si QDIP in optical communication and thermal imaging and the structure optimization are described. Finally, the key problems for improving the properties of Ge/Si QDs and Ge/Si QDIP, future trends and prospects are discussed.

Стилі APA, Harvard, Vancouver, ISO та ін.

11

Lingalugari, Murali, Evan Heller, Barath Parthasarathy, John Chandy, and Faquir Jain. "Quantum Dot Floating Gate Nonvolatile Random Access Memory Using Ge Quantum Dot Channel for Faster Erasing." International Journal of High Speed Electronics and Systems 27, no. 01n02 (March 2018): 1840006. http://dx.doi.org/10.1142/s0129156418400062.

Повний текст джерела

Анотація:

This paper presents an approach to enhance floating gate quantum dot nonvolatile random access memory (QDNVRAM) cells in terms of higher-speed and lower-voltage Erase not possible with conventional floating gate nonvolatile memories. It is achieved by directly accessing the floating gate layer with a Ge quantum dot access channel via an additional drain (D2) during the Erase and/or Write operation. Quantum mechanical simulations in GeOx-cladded Ge quantum dot layers functioning as the floating gate as well access channel to facilitate Erase and Write are presented. Experimental data on fabricated long channel nonvolatile random access memory cell with SiOx-cladded Si dots is presented. Quantum simulations show lower voltage operation for GeOx-cladded Ge QD floating gate than SiOx-cladded Si dots. The Erase time is orders of magnitude faster than flash and is comparable to competing NVRAMs.

Стилі APA, Harvard, Vancouver, ISO та ін.

12

Le, Thu-Huong, Dang Thi Thanh Le, and Nguyen Van Tung. "Synthesis of Colloidal Silicon Quantum Dot from Rice Husk Ash." Journal of Chemistry 2021 (March 2, 2021): 1–9. http://dx.doi.org/10.1155/2021/6689590.

Повний текст джерела

Анотація:

This article describes the synthesis procedure of colloidal silicon quantum dot (Si QDs) from rice husk ash. The silicon quantum dots were capped with 1-octadecene by thermal hydrosilylation under argon gas to obtain octadecyl-Si QDs (ODE-Si QDs). The size separation of ODE-Si QDs was examined by the column chromatography method, which used silica gel (40–63 μm) as the stationary phase. Finally, we obtained two fractions of silicon quantum dot, exhibiting blue emission (B-Si QDs) with an average size of 2.5 ± 0.73 nm and red emission (R-Si QDs) with an average size of 5.1 ± 0.68 nm under a UV lamp (365 nm). The PL spectra of B-Si QDs and R-Si QDs samples show maximum peak energy at 410 nm (3.02 eV) and 700 nm (1.77 eV), respectively, while the quantum yield of Si QDs decreases from 5.8 to 34.6% when the average size decreases from 2.5 nm to 5.1 nm. The above results of PL emission spectroscopy and UV-vis absorption show quantum confined effect in Si QDs.

Стилі APA, Harvard, Vancouver, ISO та ін.

13

Lin, C. H., C. Y. Yu, C. Y. Peng, W. S. Ho, and C. W. Liu. "Broadband SiGe∕Si quantum dot infrared photodetectors." Journal of Applied Physics 101, no. 3 (February 2007): 033117. http://dx.doi.org/10.1063/1.2433768.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

14

Grützmacher, Detlev, Thomas Fromherz, Christian Dais, Julian Stangl, Elisabeth Müller, Yasin Ekinci, Harun H. Solak, et al. "Three-Dimensional Si/Ge Quantum Dot Crystals." Nano Letters 7, no. 10 (October 2007): 3150–56. http://dx.doi.org/10.1021/nl0717199.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

15

Al-Douri, Y., R. Khenata, and A. H. Reshak. "Investigated optical studies of Si quantum dot." Solar Energy 85, no. 9 (September 2011): 2283–87. http://dx.doi.org/10.1016/j.solener.2011.06.017.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

16

Rappaport, N., E. Finkman, P. Boucaud, S. Sauvage, T. Brunhes, V. Le Thanh, D. Bouchier, and S. E. Schacham. "Photoconductivity of Ge/Si quantum dot photodetectors." Infrared Physics & Technology 44, no. 5-6 (October 2003): 513–16. http://dx.doi.org/10.1016/s1350-4495(03)00173-7.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

17

Shcherbyna, L., and T. Torchynska. "Si quantum dot structures and their applications." Physica E: Low-dimensional Systems and Nanostructures 51 (June 2013): 65–70. http://dx.doi.org/10.1016/j.physe.2012.09.026.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

18

Yakimov, A. I., A. V. Dvurechenskii, A. I. Nikiforov, and Yu Yu Proskuryakov. "Interlevel Ge/Si quantum dot infrared photodetector." Journal of Applied Physics 89, no. 10 (May 15, 2001): 5676–81. http://dx.doi.org/10.1063/1.1346651.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

19

Vandersypen, Lieven. "(Digital Presentation) Quantum Computing in Si/Sige Quantum Dot Arrays." ECS Meeting Abstracts MA2022-02, no. 32 (October 9, 2022): 1205. http://dx.doi.org/10.1149/ma2022-02321205mtgabs.

Повний текст джерела

Анотація:

Quantum computation has captivated the minds of many for almost two decades. For much of that time, it was seen mostly as an extremely interesting scientific problem. In the last few years, we have entered a new phase as the belief has grown that a large-scale quantum computer can actually be built. Quantum bits encoded in the spin state of individual electrons in Si/SiGe quantum dot arrays, have emerged as a highly promising direction. Recent highlights from our group include the operation of a device with six quantum bits and the demonstration of quantum operations with a fidelity above 99.5%. In this talk, I will present our vision of a large-scale spin-based quantum processor, and ongoing work to realize this vision.

Стилі APA, Harvard, Vancouver, ISO та ін.

20

Murphy, Jessica K., Robert Hull, Devin Pyle, Hao Wang, Jennifer Gray, and Jerrold Floro. "Control of semiconductor quantum dot nanostructures: Variants of SixGe1−x/Si quantum dot molecules." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 29, no. 1 (January 2011): 011029. http://dx.doi.org/10.1116/1.3533938.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

21

Hyldgaard, Per, Henry K. Harbury, and Wolfgang Porod. "Electrostatic Formation of Coupled Si/SiO2 Quantum Dot Systems." VLSI Design 8, no. 1-4 (January 1, 1998): 555–58. http://dx.doi.org/10.1155/1998/67609.

Повний текст джерела

Анотація:

We present three-dimensional numerical modeling results for gated Si/SiO2 quantum dot systems in the few-electron regime. In our simulations, the electrostatic confining potential results from the Poisson equation assuming a self-consistent Thomas-Fermi charge model. We find that a very thin SiO2 top insulating layer allows an effective control with single-electron confinement in quantum dots with radius less than 10nm and investigate the detailed potential and resulting charge densities. Our three-dimensional finite-element modeling tool allows future investigations of the charge coupling in gated few-electron quantum-dot cellular automata.

Стилі APA, Harvard, Vancouver, ISO та ін.

22

Kondo, Jun, Murali Lingalugari, Pik-Yiu Chan, Evan Heller, and Faquir Jain. "Modeling and Fabrication of Quantum Dot Channel Field Effect Transistors Incorporating Quantum Dot Gate." MRS Proceedings 1551 (2013): 149–54. http://dx.doi.org/10.1557/opl.2013.899.

Повний текст джерела

Анотація:

ABSTRACTQuantum dot gate (QDG) field-effect transistors (FET) have shown three-state transfer characteristics. Quantum dot channel (QDC) field-effect transistors (FET) have exhibited fourstate ID-VG characteristics. This project aims at studying the effect of incorporating cladded quantum dot layers in the gate region of QDC-FET. Four-state characteristics are explained by carrier transport in narrow energy mini-bands which are manifested in a quantum dot superlattice (QDSL) channel. QDSL is formed by an array of cladded quantum dots (such as SiOx-Si and GeOx-Ge). Multi-state FETs are needed in multi-valued logic (MVL) that can reduce the number of gates and transistors in digital circuits. The fabricated device showed the four-state characteristic (OFF, ‘I1’, ‘I2’, ON).

Стилі APA, Harvard, Vancouver, ISO та ін.

23

Kang, Ji-Hoon, Junghee Ryu, and Hoon Ryu. "Exploring the behaviors of electrode-driven Si quantum dot systems: from charge control to qubit operations." Nanoscale 13, no. 1 (2021): 332–39. http://dx.doi.org/10.1039/d0nr05070a.

Повний текст джерела

Анотація:

Quantum logic operations and electron spin controls in a Si double quantum dot platform is studied with a multi-scale modeling approach that can open the pathway to explore engineering details for Si-based designs of robust quantum logic gates.

Стилі APA, Harvard, Vancouver, ISO та ін.

24

POROD, WOLFGANG. "QUANTUM-DOT CELLULAR AUTOMATA DEVICES AND ARCHITECTURES." International Journal of High Speed Electronics and Systems 09, no. 01 (March 1998): 37–63. http://dx.doi.org/10.1142/s012915649800004x.

Повний текст джерела

Анотація:

We discuss novel nanoelectronic architecture paradigms based on cells composed of coupled quantum-dots. These ideas of a transistor-less approach represent a radical departure from conventional technology. We utilize a strategy which exploits the physical interactions between quantum-dots arranged in suitably designed cellular arrays. Boolean logic functions may be implemented in specific arrays of cells representing binary information, the so-called Quantum-Dot Cellular Automata (QCA). Cells may also be viewed as carrying analog information and we outline a network-theoretic description of such Quantum-Dot Nonlinear Networks (Q–CNN). In addition, we discuss possible realizations of these structures in a variety of semiconductor systems (including GaAs/AlGaAs, Si/SiGe, and Si/SiO 2), rings of metallic tunnel junctions, and candidates for molecular implementations.

Стилі APA, Harvard, Vancouver, ISO та ін.

25

Lei, Hui, Tong Zhou, Shuguang Wang, Yongliang Fan, and Zhenyang Zhong. "Large-area ordered Ge-Si compound quantum dot molecules on dot-patterned Si (001) substrates." Nanotechnology 25, no. 34 (July 31, 2014): 345301. http://dx.doi.org/10.1088/0957-4484/25/34/345301.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

26

NENASHEV, A. V., A. V. DVURECHENSKII, A. F. ZINOVIEVA, and E. A. GOLOVINA. "ZEEMAN EFFECT FOR ELECTRONS AND HOLES IN Ge/Si QUANTUM DOTS." International Journal of Nanoscience 02, no. 06 (December 2003): 511–19. http://dx.doi.org/10.1142/s0219581x03001620.

Повний текст джерела

Анотація:

We investigate theoretically the Zeeman effect on the electron and hole states in quantum dots. In frame of tight-binding approach, we propose a method of calculating the g factor for localized states. The principal values of the g factor for the ground electron and hole states in the self-assembled Ge / Si quantum dot are calculated. We find the strong g factor anisotropy — the components gxx, gyy are one order smaller than the gzz component, gzz=15.71, gxx=1.14, and gyy=1.76. The analysis of the wave function structure shows that the g factor of hole are mainly controlled by the contribution of the state with Jz=±(3/2), where Jz is the angular momentum projection on the growth direction of the quantum dot. The g factor of localized electron in Ge / Si quantum dot is close to 2: gzz=2.0004 and gxx=gyy=1.9976.

Стилі APA, Harvard, Vancouver, ISO та ін.

27

Varsha, Mohamed Kria, Jawad El Hamdaoui, Laura M. Pérez, Vinod Prasad, Mohamed El-Yadri, David Laroze, and El Mustapha Feddi. "Quantum Confined Stark Effect on the Linear and Nonlinear Optical Properties of SiGe/Si Semi Oblate and Prolate Quantum Dots Grown in Si Wetting Layer." Nanomaterials 11, no. 6 (June 8, 2021): 1513. http://dx.doi.org/10.3390/nano11061513.

Повний текст джерела

Анотація:

We have studied the parallel and perpendicular electric field effects on the system of SiGe prolate and oblate quantum dots numerically, taking into account the wetting layer and quantum dot size effects. Using the effective-mass approximation in the two bands model, we computationally calculated the extensive variation of dipole matrix (DM) elements, bandgap and non-linear optical properties, including absorption coefficients, refractive index changes, second harmonic generation and third harmonic generation as a function of the electric field, wetting layer size and the size of the quantum dot. The redshift is observed for the non-linear optical properties with the increasing electric field and an increase in wetting layer thickness. The sensitivity to the electric field toward the shape of the quantum dot is also observed. This study is resourceful for all the researchers as it provides a pragmatic model by considering oblate and prolate shaped quantum dots by explaining the optical and electronic properties precisely, as a consequence of the confined stark shift and wetting layer.

Стилі APA, Harvard, Vancouver, ISO та ін.

28

Zhang, Jie-Yin, Fei Gao, and Jian-Jun Zhang. "Research progress of silicon and germanium quantum computing materials." Acta Physica Sinica 70, no. 21 (2021): 217802. http://dx.doi.org/10.7498/aps.70.20211492.

Повний текст джерела

Анотація:

Semiconductor quantum dot is one of the promising ways to realize solid-state quantum computing. The key is to obtain high-quality semiconductor quantum computing materials. Silicon and germanium can be isotopically purified to achieve nuclear spin-free isotopes, meeting the requirement for long decoherence time. They are also compatible with the current CMOS technology, thus making them ideal material platforms for large scale integration. This review first summarizes the important progress of semiconductor quantum-dot quantum computing in recent years, then focuses on the material progress including the silicon-based Si/SiGe heterostructures, Ge/SiGe heterostructures, and Ge/Si one-dimensional wires, finally presents the outlook about the development of silicon and Ge quantum computing materials.

Стилі APA, Harvard, Vancouver, ISO та ін.

29

Zhang, Li Hong, Chong Wang, Jie Yang, Jin Tao Yao, and Yu Yang. "Coulomb Effects in the Ge/Si Single Quantum Dot." Applied Mechanics and Materials 320 (May 2013): 176–80. http://dx.doi.org/10.4028/www.scientific.net/amm.320.176.

Повний текст джерела

Анотація:

Using scanning probe microscopy (SPM) technique, the electronic properties of Ge/Si quantum dots (QDs) have been characterized. Our results demonstrate that a layer of a disordered structure is formed between the Ge/Si QDs and the surface of Si substrate due to the defects in QDs during the bias voltage applied. That is, a double tunneling system in which the Coulomb blocking effect can be observed is constructed during the electronic measurement for the single quantum dot (SQD).

Стилі APA, Harvard, Vancouver, ISO та ін.

30

Sarkisyan, Hayk A., David B. Hayrapetyan, Lyudvig S. Petrosyan, Eduard M. Kazaryan, Anton N. Sofronov, Roman M. Balagula, Dmitry A. Firsov, Leonid E. Vorobjev, and Alexander A. Tonkikh. "Realization of the Kohn’s Theorem in Ge/Si Quantum Dots with Hole Gas: Theory and Experiment." Nanomaterials 9, no. 1 (January 3, 2019): 56. http://dx.doi.org/10.3390/nano9010056.

Повний текст джерела

Анотація:

This article discusses specific quantum transitions in a few-particle hole gas, localized in a strongly oblate lens-shaped quantum dot. Based on the adiabatic method, the possibility of realizing the generalized Kohn theorem in such a system is shown. The criteria for the implementation of this theorem in a lens-shaped quantum dot, fulfilled in the experiment, is presented. An analytical expression is obtained for the frequencies of resonant absorption of far-infrared radiation by a gas of heavy holes, which depends on the geometric parameters of the quantum dot. The results of experiments on far-infrared absorption in the arrays of p-doped Ge/Si quantum dots grown by molecular beam epitaxy (MBE) with gradually increasing average number of holes in dot are presented. Experimental results show that the Coulomb interaction between the holes does not affect the resonant frequency of the transitions. A good agreement between the theoretical and experimental results is shown.

Стилі APA, Harvard, Vancouver, ISO та ін.

31

Tsai, Yi-Chia, Ming-Yi Lee, Yiming Li, and Seiji Samukawa. "Miniband formulation in Ge/Si quantum dot array." Japanese Journal of Applied Physics 55, no. 4S (March 15, 2016): 04EJ14. http://dx.doi.org/10.7567/jjap.55.04ej14.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

32

Wan, Yating, Chao Xiang, Joel Guo, Rosalyn Koscica, MJ Kennedy, Jennifer Selvidge, Zeyu Zhang, et al. "High Speed Evanescent Quantum‐Dot Lasers on Si." Laser & Photonics Reviews 15, no. 8 (June 27, 2021): 2100057. http://dx.doi.org/10.1002/lpor.202100057.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

33

Haskins, J. B., A. Kinaci, and T. Çağin. "Thermal conductivity of Si–Ge quantum dot superlattices." Nanotechnology 22, no. 15 (March 10, 2011): 155701. http://dx.doi.org/10.1088/0957-4484/22/15/155701.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

34

Hsu, B. C., C. H. Lin, P. S. Kuo, S. T. Chang, P. S. Chen, C. W. Liu, J. H. Lu, and C. H. Kuan. "Novel MIS Ge–Si Quantum-Dot Infrared Photodetectors." IEEE Electron Device Letters 25, no. 8 (August 2004): 544–46. http://dx.doi.org/10.1109/led.2004.831969.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

35

Yang, Zheng, Yi Shi, Jianlin Liu, Bo Yan, Rong Zhang, Youdou Zheng, and Kanglong Wang. "Optical properties of Ge/Si quantum dot superlattices." Materials Letters 58, no. 29 (November 2004): 3765–68. http://dx.doi.org/10.1016/j.matlet.2004.08.016.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

36

Kawashima, Yuki, Kenta Nakahara, Hiroshi Sato, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, and Michio Kondo. "Quantum dot-sensitized solar cells using Si nanoparticles." Transactions of the Materials Research Society of Japan 35, no. 3 (2010): 597–99. http://dx.doi.org/10.14723/tmrsj.35.597.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

37

Jo, M., K. Ishida, N. Yasuhara, Y. Sugawara, K. Kawamoto, and S. Fukatsu. "A Si-based quantum-dot light-emitting diode." Applied Physics Letters 86, no. 10 (March 7, 2005): 103509. http://dx.doi.org/10.1063/1.1882757.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

38

CHAN, M. Y., and P. S. LEE. "FABRICATION OF SILICON NANOCRYSTALS AND ITS ROOM TEMPERATURE LUMINESCENCE EFFECTS." International Journal of Nanoscience 05, no. 04n05 (August 2006): 565–70. http://dx.doi.org/10.1142/s0219581x06004802.

Повний текст джерела

Анотація:

Silicon ( Si ) nanocrystals have been considered a good candidate for flash memory device and nanophotonic applications. The fabrication of nanocrystal memory is to form uniform, small size and high density quantum dots. In this study, nanometer-scale silicon quantum dots have been fabricated on ultrathin silicon oxide layer using amorphous silicon (a- Si ) deposition followed by various annealing treatments. The a- Si layers were crystallized using furnace annealing, laser annealing and rapid thermal annealing (RTA). After annealing to form nanometer-sized crystallites, silicon wet etch was carried out to isolate the nanocrystals. The size, uniformity and density of the nanocrystals were successfully controlled by different annealing treatments. The mean dot height and mean dot diameter is 1–5 nm and 2–5 nm, respectively. Lateral growth of the silicon dots was further controlled by systemic variations of the annealing conditions. It is found that the annealed a- Si films exhibit room temperature visible photoluminescence (PL) resulting from the formation of nanometer-sized crystallites. Selective wet etch and Secco-etch treatment increased the PL efficiency that is useful for nanophotonics applications. The feasibility of quantum dot formation using ultra thin amorphous Si films is demonstrated in this work.

Стилі APA, Harvard, Vancouver, ISO та ін.

39

Fissel, Andreas. "Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiC." Materials Science Forum 483-485 (May 2005): 163–68. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.163.

Повний текст джерела

Анотація:

The different aspects of molecular beam epitaxy (MBE) for producing two-dimensional (Quantum well), one-dimensional (Quantum wire and rod), and zero-dimensional (Quantum dot) structures based on SiC for functional applications are discussed. Development and implementation of a suitable MBE growth procedure for fabrication of heteropolytypic layer sequences are demonstrated in context with thermodynamic considerations. Furthermore, the growth of onedimensional structures based on cubic wires and nanorod arrays, also grown on Si(111), is shown. Moreover, the perspectives of quantum dot structures and a novel way to form 3C-SiC-dot structures within α-SiC has been discussed.

Стилі APA, Harvard, Vancouver, ISO та ін.

40

Hu, Rui-Zi, Rong-Long Ma, Ming Ni, Yuan Zhou, Ning Chu, Wei-Zhu Liao, Zhen-Zhen Kong, et al. "Flopping-mode spin qubit in a Si-MOS quantum dot." Applied Physics Letters 122, no. 13 (March 27, 2023): 134002. http://dx.doi.org/10.1063/5.0137259.

Повний текст джерела

Анотація:

Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots charge state, “flopping-mode” EDSR has been realized in Si/SiGe QDs. Here, we demonstrate a flopping-mode spin qubit in a Si-MOS QD via Elzerman single-shot readout. When changing the detuning with a fixed drive power, we achieve s-shape spin resonance frequencies, an order of magnitude improvement in the spin Rabi frequencies, and virtually constant spin dephasing times. Our results offer a route to large-scale spin qubit systems with higher control fidelity in Si-MOS QDs.

Стилі APA, Harvard, Vancouver, ISO та ін.

41

Ji, Yang, Yingying Zhai, Huafeng Yang, Jingjing Liu, Wenyi Shao, Jun Xu, Wei Li, and Kunji Chen. "Improved device performances based on Si quantum dot/Si nanowire hetero-structures by inserting an Al2O3 thin layer." Nanoscale 9, no. 41 (2017): 16038–45. http://dx.doi.org/10.1039/c7nr05694j.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

42

Wang, I.-Hsiang, Po-Yu Hong, Kang-Ping Peng, Horng-Chih Lin, Thomas George, and Pei-Wen Li. "Germanium Quantum-Dot Array with Self-Aligned Electrodes for Quantum Electronic Devices." Nanomaterials 11, no. 10 (October 16, 2021): 2743. http://dx.doi.org/10.3390/nano11102743.

Повний текст джерела

Анотація:

Semiconductor-based quantum registers require scalable quantum-dots (QDs) to be accurately located in close proximity to and independently addressable by external electrodes. Si-based QD qubits have been realized in various lithographically-defined Si/SiGe heterostructures and validated only for milli-Kelvin temperature operation. QD qubits have recently been explored in germanium (Ge) materials systems that are envisaged to operate at higher temperatures, relax lithographic-fabrication requirements, and scale up to large quantum systems. We report the unique scalability and tunability of Ge spherical-shaped QDs that are controllably located, closely coupled between each another, and self-aligned with control electrodes, using a coordinated combination of lithographic patterning and self-assembled growth. The core experimental design is based on the thermal oxidation of poly-SiGe spacer islands located at each sidewall corner or included-angle location of Si3N4/Si-ridges with specially designed fanout structures. Multiple Ge QDs with good tunability in QD sizes and self-aligned electrodes were controllably achieved. Spherical-shaped Ge QDs are closely coupled to each other via coupling barriers of Si3N4 spacer layers/c-Si that are electrically tunable via self-aligned poly-Si or polycide electrodes. Our ability to place size-tunable spherical Ge QDs at any desired location, therefore, offers a large parameter space within which to design novel quantum electronic devices.

Стилі APA, Harvard, Vancouver, ISO та ін.

43

Jain, F., R. H. Gudlavalleti, R. Mays, B. Saman, J. Chandy, and E. Heller. "Modeling of Quantum Dot Channel (QDC) Si FETs at Sub-Kelvin for Multi-State Logic." International Journal of High Speed Electronics and Systems 29, no. 01n04 (March 2020): 2040017. http://dx.doi.org/10.1142/s0129156420400170.

Повний текст джерела

Анотація:

Multi-state room temperature operation of SiOx-cladded Si quantum dots (QD) and GeOx-cladded Ge quantum dot channel (QDC) field-effect transistors (FETs) and spatial wavefunction switched (SWS)-FETs have been experimentally demonstrated. This paper presents simulation of cladded Si and Ge quantum dot channel (QDC) field-effect transistors at 4.2°K and milli-Kelvin temperatures. An array of thin oxide barrier/cladding (∼1nm) on quantum dots forms a quantum dot superlattice (QDSL). A gradual channel approximation model using potential and inversion layer charge density nQM, obtained by the self-consistent solution of the Schrodinger and Poisson’s equations, is shown to predict I-V characteristics up to milli-Kelvin temperatures. Physics-based equivalent circuit models do not work below 53°K. However, they may be improved by adapting parameters derived from quantum simulations. Low-temperature operation improves noise margins in QDC- and SWS-FET based multi-bit logic, which dissipates lower power and comprise of fewer device count. In addition, the role of self-assembled cladded QDs with transfer gate provides a novel pathway to implement qubit processing.

Стилі APA, Harvard, Vancouver, ISO та ін.

44

Hu, Rui-Zi, Rong-Long Ma, Ming Ni, Xin Zhang, Yuan Zhou, Ke Wang, Gang Luo, et al. "An Operation Guide of Si-MOS Quantum Dots for Spin Qubits." Nanomaterials 11, no. 10 (September 24, 2021): 2486. http://dx.doi.org/10.3390/nano11102486.

Повний текст джерела

Анотація:

In the last 20 years, silicon quantum dots have received considerable attention from academic and industrial communities for research on readout, manipulation, storage, near-neighbor and long-range coupling of spin qubits. In this paper, we introduce how to realize a single spin qubit from Si-MOS quantum dots. First, we introduce the structure of a typical Si-MOS quantum dot and the experimental setup. Then, we show the basic properties of the quantum dot, including charge stability diagram, orbital state, valley state, lever arm, electron temperature, tunneling rate and spin lifetime. After that, we introduce the two most commonly used methods for spin-to-charge conversion, i.e., Elzerman readout and Pauli spin blockade readout. Finally, we discuss the details of how to find the resonance frequency of spin qubits and show the result of coherent manipulation, i.e., Rabi oscillation. The above processes constitute an operation guide for helping the followers enter the field of spin qubits in Si-MOS quantum dots.

Стилі APA, Harvard, Vancouver, ISO та ін.

45

Hsieh, You-Da, Ming-Way Lee, and Gou-Jen Wang. "Sb2S3Quantum-Dot Sensitized Solar Cells with Silicon Nanowire Photoelectrode." International Journal of Photoenergy 2015 (2015): 1–10. http://dx.doi.org/10.1155/2015/213858.

Повний текст джерела

Анотація:

We propose a novel quantum-dot sensitized solar cell (QDSSC) structure that employs a quantum dot/semiconductor silicon (QD/Si) coaxial nanorod array to replace the conventional dye/TiO2/TCO photoelectrode. We replaced the backlight input mode with top-side illumination and used a quantum dot to replace dye as the light-absorbing material. Photon-excited photoelectrons can be effectively transported to each silicon nanorod and conveyed to the counter electrode. We use two-stage metal-assisted etching (MAE) to fabricate the micro-nano hybrid structure on a silicon substrate. We then use the chemical bath deposition (CBD) method to synthesize a Sb2S3quantum dot on the surface of each silicon nanorod to form the photoelectrode for the quantum dot/semiconductor silicon coaxial nanorod array. We use a xenon lamp to simulate AM 1.5 G (1000 W/m2) sunlight. Then, we investigate the influence of different silicon nanorod arrays and CBD deposition times on the photoelectric conversion efficiency. When an NH (N-type with high resistance) silicon substrate is used, the QD/Si coaxial nanorod array synthesized by three runs of Sb2S3deposition shows the highest photoelectric conversion efficiency of 0.253%. The corresponding short-circuit current density, open-circuit voltage, and fill factor are 5.19 mA/cm2, 0.24 V, and 20.33%, respectively.

Стилі APA, Harvard, Vancouver, ISO та ін.

46

Li, Jun. "High-Performance Monolithic Integration of III-V QD Lasers on Si Substrates." Highlights in Science, Engineering and Technology 55 (July 9, 2023): 23–28. http://dx.doi.org/10.54097/hset.v55i.9912.

Повний текст джерела

Анотація:

With the development of digital processes, the speed and efficiency of information exchange has increased to a great extent. Silicon-based photonics allows for large-scale photonic integration through CMOS manufacturing processes, the advantages of which lie in the low cost, low energy consumption and high quality of such processes. Currently, silicon-based monolithic integrated quantum dot lasers have achieved lifetimes comparable to those of heterogeneous integrated lasers and are even available for commercial applications. The silicon photonic platform also offers low-loss passive devices, as well as high-speed optical modulators and photodetectors. However, device performance suffers due to differences in physical properties between group III-V lasers and substrate materials, an important factor limiting the development of silicon-based monolithic integrated quantum dot lasers. This paper reviews the respective characteristics of silicon-based monolithic and heterogeneous integration. The advantages of monolithically integrated III-V quantum dot lasers over heterogeneous integration are highlighted, as well as the challenges, solutions and recent developments.

Стилі APA, Harvard, Vancouver, ISO та ін.

47

Софронов, А. Н., Р. М. Балагула, Д. А. Фирсов, Л. Е. Воробьев, А. А. Тонких, А. А. Саркисян, Д. Б. Айрапетян, Л. С. Петросян та Э. М. Казарян. "Поглощение излучения дальнего инфракрасного диапазона квантовыми точками Ge/Si". Физика и техника полупроводников 52, № 1 (2018): 63. http://dx.doi.org/10.21883/ftp.2018.01.45320.8655.

Повний текст джерела

Анотація:

AbstractThe experimental and theoretical results of studies of optical absorption in doped Ge/Si quantumdot structures in the far-infrared region, corresponding to the energies of transitions of holes from the ground state to the lowest excited size-quantization state, are reported. An analytical theory of the size quantization of holes in a lens-shaped quantum dot is developed in the context of the adiabatic approximation with consideration for pair Coulomb interaction. It is shown that the interaction has no effect on the frequencies of lower interlevel resonances. This fact is representative of generalized Kohn’s theorem satisfied due to the specific geometric shape of the quantum dot. The experimental and theoretical values of the transition energies are in good agreement.

Стилі APA, Harvard, Vancouver, ISO та ін.

48

Humayun, M. A., M. A. Rashid, F. Malek, S. B. Yaakob, A. Z. Abdullah, M. I. Yusoff, M. I. Misrun, and G. N. Shasidharan. "Enhancement of Intrinsic Carrier Concentration in the Active Layer of Solar Cell Using Indium Nitride Quantum Dot." Applied Mechanics and Materials 793 (September 2015): 435–39. http://dx.doi.org/10.4028/www.scientific.net/amm.793.435.

Повний текст джерела

Анотація:

This paper presents the improvement of intrinsic carrier concentrations in the active layer of solar cell structure using Indium Nitride quantum dot as the active layer material. We have analyzed effective density of states in conduction band and valance band of the solar cell numerically using Si, Ge and InN quantum dot in the active layer of the solar cell structure in order to improve the intrinsic carrier concentration within the active layer of the solar cell. Then obtained numerical results were compared. From the comparison results it has been revealed that the application of InN quantum dot in the active layer of the device structure improves the effective density of states both in conduction band and in the valance band. Consiquently the intrinsic carrier concentration has been improved significently by using InN quantum dot in the solart cell structure.

Стилі APA, Harvard, Vancouver, ISO та ін.

49

Shcherbyna, Lyudmula V., and Tetyana V. Torchynska. "Si Quantum Dot Structures and Some Aspects of Applications." MRS Proceedings 1534 (2013): A5—A12. http://dx.doi.org/10.1557/opl.2013.291.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

50

Pachinger, D., H. Groiss, M. Teuchtmann, G. Hesser, and F. Schäffler. "Surfactant-mediated Si quantum dot formation on Ge(001)." Applied Physics Letters 98, no. 22 (May 30, 2011): 223104. http://dx.doi.org/10.1063/1.3595486.

Повний текст джерела

Стилі APA, Harvard, Vancouver, ISO та ін.

Ми пропонуємо знижки на всі преміум-плани для авторів, чиї праці увійшли до тематичних добірок літератури. Зв'яжіться з нами, щоб отримати унікальний промокод!