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Статті в журналах з теми "Si Quantum Dot"
Porod, Wolfgang. "Quantum-Dot Devices and Quantum-Dot Cellular Automata." International Journal of Bifurcation and Chaos 07, no. 10 (October 1997): 2199–218. http://dx.doi.org/10.1142/s0218127497001606.
Повний текст джерелаDvurechenskii, Anatolii V., and Andrei I. Yakimov. "Quantum dot Ge/Si heterostructures." Uspekhi Fizicheskih Nauk 171, no. 12 (2001): 1371. http://dx.doi.org/10.3367/ufnr.0171.200112h.1371.
Повний текст джерелаDvurechenskii, Anatolii V., and Andrei I. Yakimov. "Quantum dot Ge/Si heterostructures." Physics-Uspekhi 44, no. 12 (December 31, 2001): 1304–7. http://dx.doi.org/10.1070/pu2001v044n12abeh001057.
Повний текст джерелаLambert, K., I. Moreels, D. Van Thourhout, and Z. Hens. "Quantum Dot Micropatterning on Si." Langmuir 24, no. 11 (June 2008): 5961–66. http://dx.doi.org/10.1021/la703664r.
Повний текст джерелаDvurechenskii, Anatoly, Andrew Yakimov, Victor Kirienko, Alekcei Bloshkin, Vladimir Zinovyev, Aigul Zinovieva, and Alexander Mudryi. "Enhanced Optical Properties of Silicon Based Quantum Dot Heterostructures." Defect and Diffusion Forum 386 (September 2018): 68–74. http://dx.doi.org/10.4028/www.scientific.net/ddf.386.68.
Повний текст джерелаGudlavalleti, R. H., B. Saman, R. Mays, M. Lingalugari, E. Heller, J. Chandy, and F. Jain. "Modeling of Multi-State Si and Ge Cladded Quantum Dot Gate FETs Using Verilog and ABM Simulations." International Journal of High Speed Electronics and Systems 28, no. 03n04 (September 2019): 1940026. http://dx.doi.org/10.1142/s0129156419400263.
Повний текст джерелаKondo, Jun, Pial Mirdha, Barath Parthasarathy, Pik-Yiu Chan, Bander Saman, Faquir Jain, and Evan Heller. "Modeling and Fabrication of GeOx-Ge Cladded Quantum Dot Channel (QDC) FETs on Poly-Silicon." International Journal of High Speed Electronics and Systems 27, no. 01n02 (March 2018): 1840005. http://dx.doi.org/10.1142/s0129156418400050.
Повний текст джерелаParthasarathy, Barath, Pial Mirdha, Jun Kondo, and Faquir Jain. "Dual Quantum Dot Superlattice." International Journal of High Speed Electronics and Systems 27, no. 01n02 (March 2018): 1840003. http://dx.doi.org/10.1142/s0129156418400037.
Повний текст джерелаChen, Minhan, and Wolfgang Porod. "Simulation of Quantum-Dot Structures in Si/SiO2." VLSI Design 6, no. 1-4 (January 1, 1998): 335–39. http://dx.doi.org/10.1155/1998/89258.
Повний текст джерелаHe, Peng, Chong Wang, Jie Yang, and Yu Yang. "Advance of Ge/Si Quantum Dot Infrared Photodetector." Advanced Materials Research 873 (December 2013): 799–808. http://dx.doi.org/10.4028/www.scientific.net/amr.873.799.
Повний текст джерелаДисертації з теми "Si Quantum Dot"
Surana, Kavita. "Towards silicon quantum dot solar cells : comparing morphological properties and conduction phenomena in Si quantum dot single layers and multilayers." Phd thesis, Université de Grenoble, 2011. http://tel.archives-ouvertes.fr/tel-00647293.
Повний текст джерелаWang, T. "High-performance III-V quantum-dot lasers monolithically grown on Si and Ge substrates for Si photonics." Thesis, University College London (University of London), 2012. http://discovery.ucl.ac.uk/1362647/.
Повний текст джерелаWigblad, Dan. "Structural and optical characterization of Si/Ge quantum dots." Thesis, Linköping University, The Department of Physics, Chemistry and Biology, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11672.
Повний текст джерелаIn this study silicon-germanium quantum dots grown on silicon have been investigated. The aim of the work was to find quantum dots suitable for use as a thermistor material. The quantum dots were produced at KTH, Stockholm, using a RPCVD reactor that is designed for industrial production.
The techniques used to study the quantum dots were: HRSEM, AFM, HRXRD, FTPL, and Raman spectroscopy. Quantum dots have been produced in single and multilayer structures.
As a result of this work a multilayer structure with 5 layers of quantum dots was produced with a theoretical temperature coefficient of resistance of 4.1 %/K.
Aslan, Bulent. "Physics And Technology Of The Infrared Detection Systems Based On Heterojunctions." Phd thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/12604801/index.pdf.
Повний текст джерелаAriyawansa, Gamini. "Semiconductor Quantum Structures for Ultraviolet-to-Infrared Multi-Band Radiation Detection." Digital Archive @ GSU, 2007. http://digitalarchive.gsu.edu/phy_astr_diss/17.
Повний текст джерелаLipps, Ferdinand. "Electron spins in reduced dimensions: ESR spectroscopy on semiconductor heterostructures and spin chain compounds." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-74470.
Повний текст джерелаJames, Daniel. "Fabrication and electrical characterisation of quantum dots : uniform size distributions and the observation of unusual electrical characteristics and metastability." Thesis, University of Manchester, 2010. https://www.research.manchester.ac.uk/portal/en/theses/fabrication-and-electrical-characterisation-of-quantum-dots-uniform-size-distributions-and-the-observation-of-unusual-electrical-characteristics-and-metastability(01bb9182-5290-4ad1-b6a4-3aed3970dbcf).html.
Повний текст джерелаPANTINI, SARA. "Analysis and modelling of leachate and gas generation at landfill sites focused on mechanically-biologically treated waste." Doctoral thesis, Università degli Studi di Roma "Tor Vergata", 2013. http://hdl.handle.net/2108/203393.
Повний текст джерелаChen, Hung-Bin, and 陳弘斌. "Optical properties of Ge/Si/Ge quantum dot in multilayer structure." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/59065285991693145803.
Повний текст джерела國立中央大學
物理研究所
99
In this paper, we have studied the optical properties of Ge/Si/Ge quantum dots (QDs) structure by using Photoluminescence (PL) spectroscopy.And we use rapid thermal annealing process to improve its light efficiency.Comparing the PL measurements of Ge/Si/Ge QDs structure with Ge/Si QDs structure, the structural difference effect on optical properties is studied. According to the emission energy of annealed samples in excitation-powerdependent PL measurements, we found that Ge/Si/Ge QDs structure has higher emission energy and lower carriers confinement depth due to atomic intermixing effect. According to the PL intensity with power sublinear relation at different temperature measurements, we suggest that the defect has negative effect on light efficiency because emitting light will be absorbed by the electrons confined in the defect. Finally, we found that the Ge/Si/Ge QDs structure has higher activation energy from Temperature-dependent PL measurements. Therefore, we point out that the holes in Ge/Si/Ge QDs structure probably can exist on nearby QDs by tunneling effect.
Kuo, Kuang-Yang, and 郭光揚. "Development of novel Si quantum dot thin films for solar cells application." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/88042976960020575941.
Повний текст джерела國立交通大學
光電工程研究所
102
In order to resolve the critical issues of “Green House Effect” and “Energy Crisis” for humanity’s future, the accelerated developments of renewable energies are necessary. Among all of the renewable energies, solar cells (SCs) are highly considered as the most potential one. To ponder these key factors of efficiency, cost, and lifetime, undoubtedly, the Si-based SCs have the most advantages on popularized developments in the future. However, to successfully achieve high efficiency and low cost, also called the third generation SC, the tandem Si-based SCs with multi-bandgap is required to efficiently reduce the mismatched photon energy loss. Based on the unique properties of Si quantum dot (QD), we propose to develop the novel Si QD thin films by utilizing a gradient Si-rich oxide multilayer (GSRO-ML) structure and integrating with ZnO matrix material to overcome the bottlenecks of the largely limited carrier transport efficiency in the Si-based SCs integrating Si QDs. In the beginning of this dissertation, we talk about the importance and recent developments of SCs, and then, the advantages and challenges of SCs integrating Si QDs are discussed. After that, our motivations, fabrication process, and apparatus are also introduced in details. To achieve the formation of super-high density Si QD thin films, we forsake the traditional [SiO2/SRO]-ML structure and develop a new one, GSRO-ML. In our results, by utilizing the periodical variations in Si/O atomic concentration during deposition, the Si QDs with super-high density and good size control can be self-assembled from the uniform aggregations of Si-rich atoms during annealing. Besides, the considerable enhancements on photovoltaic properties are also obtained by using a GSRO-ML structure due to the improved carrier transport efficiency and larger optical absorption coefficient. To obtain the better carrier transport path for the Si QD thin films, we also develop a new matrix material, ZnO, because it has many desirable features, such as wide and direct bandgap, high transparency, and highly tunable electrical properties. In our results, though embedded with Si QDs, the optical properties of ZnO thin film can be preserved in the long- and short-wavelength ranges. In the middle-wavelength range, the significantly enhanced light absorption and the unusual PL emission peak, owing to embedding Si QDs, are observed. These results represent the sub-bandgap formation in ZnO thin film by utilizing Si QDs while maintaining the essential optical properties of ZnO matrix. In the electrical properties, the Si QD embedded ZnO thin film reveals the significantly higher conductivity than that using SiO2 matrix material. Besides, the carriers transport mainly via ZnO matrix, not through Si QDs, is clearly observed. This unique transport mechanism differing from those using the traditional Si-based dielectric matrix materials has great potential on leading to the much better carrier transport efficiency and electrical properties for SC applications. In this dissertation, we had demonstrated the proposed novel Si QD thin films, utilizing a GSRO-ML structure and integrating with ZnO matrix material, are more suitable and advantageous for the Si-based SCs integrating Si QDs. Therefore, the high-efficiency Si-based SCs integrating Si QDs can be most definitely expected using the novel Si QD thin films.
Книги з теми "Si Quantum Dot"
Narlikar, A. V., and Y. Y. Fu, eds. Oxford Handbook of Nanoscience and Technology. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.001.0001.
Повний текст джерелаFaces da pandemia de COVID-19 nas relações internacionais e no direito internacional. Editora Amplla, 2021. http://dx.doi.org/10.51859/amplla.fpc368.1121-0.
Повний текст джерелаda Silva Wasilewski, Cassiana, and Neide de Aquino Noffs. Formação de professores alfabetizadores: desafios da docência. Brazil Publishing, 2021. http://dx.doi.org/10.31012/978-65-5861-954-3.
Повний текст джерелаPriori, Claudia, and Márcio José Pereira. Os estudos de gênero e seus percursos: Intersecções possíveis com a história pública. Brazil Publishing, 2020. http://dx.doi.org/10.31012/978-65-5861-023-6.
Повний текст джерелаSilva, Bruno Claudionor Lopes da. Do amor humano ao amor divino: Um olhar sobre o pensamento de São Bernardo de Claraval e o Tratado de Diligendo Deo. Brazil Publishing, 2021. http://dx.doi.org/10.31012/978-65-5861-254-4.
Повний текст джерелаMartini, André, Sandra Gonçalves Daldegan França, Renato Bernardi, and Tiago Eurico de Lacerda. As vulnerabilidades por intermédio da arte: Uma visão interdisciplinar do direito. Edited by Raul Greco Junior. Vox Littera Publicações, 2021. http://dx.doi.org/10.55647/book.01.2021.
Повний текст джерелаGasparro Sevilha Greco, Patrícia, and André Del Grossi Assumpção. Reflexões sobre uma nova hermenêutica constitucional: leis, valores e sociedade. Edited by Raul Greco. Vox Littera Publicações, 2022. http://dx.doi.org/10.55647/012022.
Повний текст джерелаGuimarães, Thiago Teixeira, Daniel Costa Alves da Silva, Elaine Cristina da Silva Pinto, Ercole da Cruz Rubini, Marcos Vinicios Craveiro de Amorim, Patricia Maria Lourenço Dutra, Ricardo Moreira Borges, Thais Cevada, and Wagner Santos Coelho. Excesso de exercício físico? Brazilian Journals Editora, 2022. http://dx.doi.org/10.35587/brj.ed.0001379.
Повний текст джерелаЧастини книг з теми "Si Quantum Dot"
Katsumi, Ryota, Yasutomo Ota, Satoshi Iwamoto, and Yasuhiko Arakawa. "Hybrid Integration of Quantum-Dot Non-classical Light Sources on Si." In Topics in Applied Physics, 93–121. Cham: Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-16518-4_4.
Повний текст джерелаLiu, Huiyun. "III–V Quantum-Dot Materials and Devices Monolithically Grown on Si Substrates." In Silicon-based Nanomaterials, 357–80. New York, NY: Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8169-0_14.
Повний текст джерелаLedentsov, N. N. "Si-Ge Quantum Dot Laser: What Can We Learn From III-V Experience?" In Towards the First Silicon Laser, 281–92. Dordrecht: Springer Netherlands, 2003. http://dx.doi.org/10.1007/978-94-010-0149-6_24.
Повний текст джерелаBaranov, A. V., T. S. Perova, S. Solosin, R. A. Moore, V. Yam, V. Le Thanh, and D. Bouchier. "Polarized Raman Spectroscopy of Single Layer and Multilayer Ge/Si(001) Quantum Dot Heterostructures." In Frontiers of Multifunctional Integrated Nanosystems, 139–52. Dordrecht: Springer Netherlands, 2004. http://dx.doi.org/10.1007/1-4020-2173-9_14.
Повний текст джерелаSamukawa, Seiji. "Fabrication of three-dimensional Si quantum dot array by fusion of biotemplate and neutral beam etching." In Silicon Nanomaterials Sourcebook, 87–106. Boca Raton, FL : CRC Press, Taylor & Francis Group, [2017] | Series: Series in materials science and engineering: CRC Press, 2017. http://dx.doi.org/10.4324/9781315153551-5.
Повний текст джерелаde Sousa, J. S., G. A. Farias, and J. P. Leburtonb. "Light-Induced Programming of Si Nanocrystal Flash Memories." In Physical Models for Quantum Dots, 925–32. New York: Jenny Stanford Publishing, 2021. http://dx.doi.org/10.1201/9781003148494-60.
Повний текст джерелаWang, Jing, Xuejie Zhang, and Qiang Su. "Rare Earth Solar Spectral Convertor for Si Solar Cells." In Phosphors, Up Conversion Nano Particles, Quantum Dots and Their Applications, 139–66. Singapore: Springer Singapore, 2016. http://dx.doi.org/10.1007/978-981-10-1590-8_5.
Повний текст джерелаLiu, Quanlin, and Ting Wang. "Tuning Luminescence by Varying the O/N or Al/Si Ratio in Some Eu-Doped Nitride Phosphors." In Phosphors, Up Conversion Nano Particles, Quantum Dots and Their Applications, 343–70. Berlin, Heidelberg: Springer Berlin Heidelberg, 2016. http://dx.doi.org/10.1007/978-3-662-52771-9_11.
Повний текст джерелаWu, Jiang, Mingchu Tang, and Huiyun Liu. "III–V quantum dot lasers epitaxially grown on Si substrates." In Nanoscale Semiconductor Lasers, 17–39. Elsevier, 2019. http://dx.doi.org/10.1016/b978-0-12-814162-5.00002-9.
Повний текст джерелаTalalaev, V. G., G. E. Cirlin, A. A. Tonkikh, N. D. Zakharov, P. Werner, U. Gösele, J. W. Tomm, and T. Elsaesser. "Miniband-related 1.4–1.8μm Luminescence of Ge/Si Quantum Dot Superlattices." In Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics, 324–45. Elsevier, 2008. http://dx.doi.org/10.1016/b978-0-08-046325-4.00010-4.
Повний текст джерелаТези доповідей конференцій з теми "Si Quantum Dot"
Huang, Jian, Daqian Guo, Zhuo Deng, Wei Chen, Tinghui Wu, Yaojiang Chen, Huiyun Liu, Jiang Wu, and Baile Chen. "Quantum Dot Quantum Cascade Detector on Si Substrate." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2018. http://dx.doi.org/10.1364/cleo_si.2018.sth4i.5.
Повний текст джерелаNorman, Justin, Daehwan Jung, Arthur C. Gossard, John E. Bowers, Zeyu Zhang, Yating Wan, MJ Kennedy, Alfredo Torres, and Robert Herrick. "High performance quantum dot lasers epitaxially integrated on Si." In Quantum Communications and Quantum Imaging XVI, edited by Ronald E. Meyers, Yanhua Shih, and Keith S. Deacon. SPIE, 2018. http://dx.doi.org/10.1117/12.2319627.
Повний текст джерелаKamioka, J., T. Kodera, K. Horibe, Y. Kawano, and S. Oda. "Fabrication and evaluation of heavily P-doped Si quantum dot and back-gate induced Si quantum dot." In 2012 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2012. http://dx.doi.org/10.1109/snw.2012.6243288.
Повний текст джерелаChen, Baile, Yating Wan, Zhiyang Xie, Jian Huang, Chen Shang, Justin Norman, Qiang Li, Kei May Lau, Arthur C. Gossard, and John E. Bowers. "Quantum Dot Avalanche Photodetector on Si Substrate." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/cleo_si.2020.sm3r.2.
Повний текст джерелаAnchala, S. P. Purohit, K. C. Mathur, Dinesh K. Aswal, and Anil K. Debnath. "Photoabsorption In Si Semiconductor Quantum Dot Nanostructure." In INTERNATIONAL CONFERENCE ON PHYSICS OF EMERGING FUNCTIONAL MATERIALS (PEFM-2010). AIP, 2010. http://dx.doi.org/10.1063/1.3530500.
Повний текст джерелаAl-Douri, Y., U. Hashim, N. M. Ahmed, Z. Sauli, Mohamad Rusop, and Tetsuo Soga. "Pressure Effect on Si Quantum-Dot Potential." In NANOSCIENCE AND NANOTECHNOLOGY: International Conference on Nanoscience and Nanotechnology—2008. AIP, 2009. http://dx.doi.org/10.1063/1.3160113.
Повний текст джерелаOsada, A., Y. Ota, R. Katsumi, K. Watanabe, S. Iwamoto, and Y. Arakawa. "Quantum-dot nanolasers on Si photonic circuits." In CLEO: Science and Innovations. Washington, D.C.: OSA, 2018. http://dx.doi.org/10.1364/cleo_si.2018.sf1a.7.
Повний текст джерелаBowers, John E. "Quantum Dot Lasers Epitaxially Grown on Si." In 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2019. http://dx.doi.org/10.1109/cleoe-eqec.2019.8872216.
Повний текст джерелаNenashev, A. V., A. F. Zinovieva, and Anatoly V. Dvurechenskii. "Spin transport in Ge/Si quantum dot array." In SPIE Proceedings, edited by Kamil A. Valiev and Alexander A. Orlikovsky. SPIE, 2004. http://dx.doi.org/10.1117/12.558535.
Повний текст джерелаIwashita, Shinya, Hiroomi Miyahara, Kazunori Koga, Masaharu Shiratani, Shota Nunomura, and Michio Kondo. "Plasma CVD for Producing Si Quantum Dot Films." In 2006 International Symposium on Discharges and Electrical Insulation in Vacuum. IEEE, 2006. http://dx.doi.org/10.1109/deiv.2006.357362.
Повний текст джерелаЗвіти організацій з теми "Si Quantum Dot"
Xie, Y. H. A Quantum Dot Optical Modulator for Integration With Si CMOS. Fort Belvoir, VA: Defense Technical Information Center, August 2005. http://dx.doi.org/10.21236/ada459498.
Повний текст джерелаMi, Zetian. Ultrahigh-Speed Electrically Injected 1.55 micrometer Quantum Dot Microtube and Nanowire Lasers on Si. Fort Belvoir, VA: Defense Technical Information Center, July 2015. http://dx.doi.org/10.21236/ada626838.
Повний текст джерелаSapkota, Keshab Raj, George T. Wang, Kevin Jones, and Emily Turner. Fabrication of Position Controlled Si/SiGe Quantum Dots for Integrated Optical Sources and Beyond. Office of Scientific and Technical Information (OSTI), September 2018. http://dx.doi.org/10.2172/1472231.
Повний текст джерелаAgrela, Fabiano de Abreu. TEA: O cérebro e a infância de uma pessoa com autismo. CPAH REDAÇÃO, June 2023. http://dx.doi.org/10.56238/cpahciencia-011.
Повний текст джерела